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Dissertations / Theses on the topic 'MSM photodetector'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Kache, Sravanthi. "Optimization of charge collection efficiency in MSM photodetector." Diss., Columbia, Mo. : University of Missouri-Columbia, 2005. http://hdl.handle.net/10355/4279.

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Thesis (M.S.)--University of Missouri-Columbia, 2005.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (December 12, 2006) Includes bibliographical references.

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2

Meyer, Jason T., and Mahmoud Fallahi. "Ultra-compact integrated silicon photonics balanced coherent photodetector." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621797.

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In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epit

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Huang, Sa. "GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration." Diss., Available online, Georgia Institute of Technology, 2003:, 2003. http://etd.gatech.edu/theses/available/etd-11242003-173234/unrestricted/huang%5Fsa%5F200312%5Fphd.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Ferguson, Ian T., Committee Member ; Rhodes, William T., Committee Member ; Wang, Zhonglin, Committee Member ; Brown, April S., Committee Chair ; Jokerst, Nan M., Committee Co-Chair ; Doolittle, W. Alan, Committee Member. Vita. Includes bibliographical references.

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Song, Indal. "Multi-Gbit/s CMOS Transimpedance Amplifier with Integrated Photodetector for Optical Interconnects." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4902.

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Trends toward increased integration and miniaturization of optical system components have created pressure to consolidate widely disparate analog and digital functions onto fewer and fewer chips with a goal of eventually built into a single mixed-signal chip. Yet, because of those performance requirements, the frontend circuit has traditionally used III-V compound semiconductor technologies, but the low-level of integration with other digital ICs limits the sustainability of such end products for short-distance applications. On the other hand, their CMOS counter parts, despite having such adva

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Lima, Juliano Alves de. "Projeto, modelagem e fabricação de guias de onda ópticos integrados baseados em polímeros para aplicações em sensores." Universidade de São Paulo, 2002. http://www.teses.usp.br/teses/disponiveis/18/18133/tde-29052017-135956/.

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Este trabalho visa o projeto, modelagem e fabricação de estruturas multicamadas baseadas em polímeros para aplicações como sensores ópticos integrados. A grande motivação para este trabalho está no fato de que estas estruturas, diferente da geometria Mach-Zehnder, dispensam o uso de litografia pois são completamente planares. Isto permite uma diminuição no custo de fabricação dos dispositivos além de permitir que estruturas mais curtas sejam utilizadas. Em se tratando de óptica integrada, as dimensões reduzidas da estrutura impõem severas penalidades no processo de lançamento de potência óptic

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6

Hugi, Johannes. "Ultrafast MSM photodetectors on InGaAs/GaAs superlattices /." [S.l.] : [s.n.], 1994. http://library.epfl.ch/theses/?nr=1229.

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7

Huang, Zhaoran. "Multi gigahertz InGaAs/InP inverted MSM photodetectors for photoreceiver and waveguide applications." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/5412.

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8

Vrazel, Michael Gerald. "Investigation of InGaAs/InP inverted MSM photodetectors for alignment tolerant photoreceiver applications." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13849.

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9

Moolji, Akbar. "Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36975.

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10

Karar, Ayman A. "Surface plasmons for enhanced metal-semiconductor-metal photodetectors." Thesis, Edith Cowan University, Research Online, Perth, Western Australia, 2013. https://ro.ecu.edu.au/theses/593.

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Surface Plasmon Polaritons (SPPs) are quantized charge density oscillations that occur when a photon couples to the free electron gas of the metal at the interface between a metal and a dielectric. The extraordinary properties of SPP allow for sub-diffraction limit waveguiding and localized field enhancement. The emerging field of surface plasmonics has applied SPP coupling to a number of new and interesting applications, such as: Surface Enhanced Raman Spectroscopy (SERS), super lenses, nano-scale optical circuits, optical filters and SPP enhanced photodetectors. In the past decade, there hav

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11

Hu, C. H., and 胡智祥. "Study of SiGe MSM Photodetector with Asymmetry Electrodes." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/30621772919172640236.

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碩士<br>大葉大學<br>電機工程學系碩士班<br>93<br>Flourishing development because of the optical-fiber communications, make the demand for the photoelectric component heighten, most photoelectric components are semiconductor materials which adopt the clan of III-V the past, make the silicon photoelectric integrated circuit at present of material in relative weak tendency, because the content in the nature of silicon is abundant, high advantage of easy getting, makes low expenses that the material is obtained, this is why we to do one of the silicon deep motives that probe into of structure. This text is to do

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Young, Sheng-Joue, and 楊勝州. "The Fabrication and Study of ZnO Based MSM Photodetector." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/73770840600281091514.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>93<br>In this thesis, I first introduced the growth process of our ZnO films. Those films were growth by the Molecular Beam epitaxy system. After growing, I used the photoluminescence system and X-ray diffraction system to check our films. And the quality of those films were good. And then,I study the characteristics of five contact electrodes. These contact electrodes are Au, Ag, Pd, Ni/Au and Ir. I used these metals on Zno MSM photodetectors as contact electrodes. The photo/dark contrast of Au, Ag, Pd, Ni/Au and Ir MSM photodetectors were 4610, 2520, 322,118 and

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Fu, J. H., and 傅景鴻. "The Application of ITO on InGaP/GaAs MSM photodetector." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/98614552279043853059.

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碩士<br>國立中央大學<br>光電(科學)研究所<br>85<br>With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained.

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Chou, Wang-Sheng, and 周旺生. "Fabrication and Characterization of Microchip Electrophoresis with ZnSe MSM Photodetector." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/52041537390432318388.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>95<br>This research divide into three directions, containing the fabrication of MSM Photodetector and microchip electrophoresis, and combine the MSM Photodetector with microchip electrophoresis to set up the fluorescence-examination-system to detect the signal of DNA fragment by electrophoresis. In the fabrication of photodetector, we use ZnSe and ZnO as the blue light material. In the part of electrode, we use ITO as the high transparent electrode, and carry on the material analysis, fabricate the better photo-responsivity photodetector to make the comparison on t

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Lin, Tsai-yuan, and 林才淵. "A Study of Integrated Microchip Electrophoresis with ZnSe MSM Photodetector." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/04866863855713369306.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>97<br>This paper mainly discusses the system of the MSM photodetectors combined with biochip detection. Through the MEMS, the fluorescence detection system made up of the MSM-PD combined with the basic circuit, gel electrophoresis chip and software record of reading values can be produced. In the fabrication of photodetector, use low-cost IRCVD system depositing ZnSe for blue band photosensitive layer material. Interdigitated electrode part, using AZO conductive transparent film by comparing different condition for better parameter in sputter unit power 3.7 W/cm2.

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16

Guang, Chen Chung, and 陳重光. "Investigation of MSM-Photodetector Grown by Metal Organic Chemical Vapor Deposition." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/35628071645630586653.

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碩士<br>國立成功大學<br>電機工程學系<br>87<br>We grow the different Gallium ratio of In1-xGaxP to be the Schottky enhanced layer of InP/InGaAs Metal-Semiconductor-Metal photodetector (MSM-PD). From our experiment results, we discuss the metal-semiconductor junction condition in MSM-PD by using the different Gallium ratio of In1-xGaxP. However in theoretical calculation, the larger Gallium ratio of In1-xGaxP is, the higher Schottky barrier MSM-PD owns. But from our experiment, the larger Gallium ratio forms the bigger leakage current. There are some principles used to decrease the dark current of our MSM-PD.

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Chuang, Ying-Cheng, and 莊英政. "Characteristics of MSM Photodetector with Amorphous Heterojunction and Recessed ITO electrode." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/96807078514421154884.

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碩士<br>國立中央大學<br>電機工程研究所<br>87<br>Abstract In this study, the metal-semiconductor-metal photodetectors (MSM-PD's) with a hydrogenated amorphous silicon (a-Si:H) film deposited on 〔100〕 silicon wafer have been studied. Two kinds of MSM-PD device, one had the recessed Cr electrodes and the other had the recessed ITO (Indium-Tin-Oxide) transparent electrodes have been fabricated on Si wafers and their characteristics were compared. The MSM-PD with recessed ITO electrode had a higher responsivity than that of the one with recessed Cr electrode. This could be due to that the MSM-PD with t

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18

Chen, Hsuan-Hsu, and 陳炫旭. "Study of the UV MSM photodetector based on AIN thin film." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/70143247371413133071.

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碩士<br>國立屏東科技大學<br>機械工程系所<br>96<br>In this thesis, we have studied the AlN thin film which is act as the active layer of metal-semiconductor-metal (MSM) structure for the deep UV photodetector. The thesis divided into three parts: (a) Preparation and procedure of AlN thin film；(b) design of interdigital electrode of the photodetector；(c) Measured results of the fabricated UV MSM photodetector. (a) Preparation of AlN thin film In the thesis, we propose a detailed fabricating process and characterization of AlN film UV photodetector. The AlN thin film has 6.2 eV energy gap and high dielectric con

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19

"Interdigitated metal-semiconductor-metal (MSM) photodetector on III-V compound semiconductor materials." Chinese University of Hong Kong, 1995. http://library.cuhk.edu.hk/record=b5888464.

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by Hiu-suen Choy.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 1995.<br>Includes bibliographical references (leaves [124]-131).<br>Acknowledgements<br>Abstract<br>Chapter Chapter 1 --- Introduction --- p.1-1<br>Chapter Chapter 2 --- Basic Theory for MSM Photodetectors --- p.2-1<br>Chapter 2.1 --- Schottky-Mott Theory for Ideal metal-Semiconductor Contact --- p.2-1<br>Chapter 2.2 --- Modifications to Schottky-Mott Theory for Practical Metal Semiconductor Contact --- p.2-4<br>Chapter 2.3 --- Energy Band of Metal-semiconductor-metal (MSM) Structures --- p.2-6<br>Chapter 2.4 --- Dark

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Chen, Ming-Hung, and 陳明鴻. "Application of Indium-Tin-Oxide with Improved Transmittance for UV MSM Photodetector." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/68436145649902551569.

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21

Shih, Ming-Chang, and 石明昌. "Fabrication and Study of the ZnSe-based Metal-Semiconductor-Metal (MSM) Photodetector." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/25659920523305910109.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>90<br>In this thesis, the II-VI ZnSe-based compound semiconductors were all grown on semi-insulated (SI) GaAs substrates by molecular beam epitaxy (MBE) method. The crystal quality of the sample was investigated by used of photoluminescence (PL) and X-ray diffraction analyzer. These fabricated ZnSe-based metal-semiconductor-metal (MSM) photodetectors were compared with different parameters, including composition ratio, finger width/spacing, and thickness of absorption layer. We found that a lot of defects and dislocations produced at ZnSe/GaAs interface (0.2

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Lin, Lei Chen Ray T. "Integration of thin film GaAs MSM photodetector in fully embedded board-level optoelectronic interconnects." 2004. http://repositories.lib.utexas.edu/bitstream/handle/2152/2070/linl042.pdf.

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Lin, Lei. "Integration of thin film GaAs MSM photodetector in fully embedded board-level optoelectronic interconnects." Thesis, 2004. http://hdl.handle.net/2152/2070.

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Kuo, Chiao-Han, and 郭巧涵. "Using localized surface plasmon resonance to enhance the efficiency of a GaN MSM photodetector." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/95023205342537699933.

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碩士<br>國立交通大學<br>電子物理系所<br>104<br>In this work, we studied how surface plasma influences the responsitivity of a GaN-based metal-semiconductor-metal photo detector. The device was fabricated on a freestanding GaN substrate. To manufacture the GaN substrate, an AlGaN buffer layer was deposited on a commercial sapphire substrate first. After epitaxial growth by Hydride Vapor Phase Epitaxy (HVPE), a 300-um thick GaN film was produced. The film was sequentially separated from sapphire by laser lift off (LLO), and hence the GaN substract was obtained. Chemical mechanical polishing (CMP) was used to

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Lin, Chung-Yi, and 林忠億. "Investigation of ZnSe/Si Metal-Semiconductor-Metal (MSM) Photodetector Using IR Furnace Chemical Vapor Deposition." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/29772847564015235938.

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碩士<br>國立海洋大學<br>電機工程學系<br>87<br>-Abstract- In this experiment, we use the low cost IR-CVD system and two-step growth method to grow ZnSe epilayers on oriented-(111) Si substrate for reducing the lattice mismatch problem between ZnSe and Si. Because of the existence of the lattice constant mismatch within approximately 4.1% between the ZnSe and Si that can introduce high density of threading dislocations, stacking faults and defects resulting in the interface states. We use the optimum ZnSe epilayers on Si to fabricate the devices of MSM photodetector. Further, we have sho

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Chen, Jing-Yu, and 陳京玉. "Optical Characterization Of ZnSe-based Compound Semiconductors and Application on Metal-Semiconductor-Metal (MSM) Photodetector." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/3552xp.

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碩士<br>中原大學<br>電子工程研究所<br>91<br>In this dissertation, a high quality quaternary compound ZnSSeTe thin film was grown on semi-insulated GaAs substrates by molecule beam epitaxy (MBE) system. The crystal quality, optical and electrical properties of a high quality quaternary compound ZnSSeTe thin films were investigated by high-resolution X-ray diffraction (XPD), photoluminescence (PL), and I-V measurements. Finally, the responsivity of the fabricated ZnSSeTe based photodetectors with different growth parameters photodetectors would be studied. Analytical results that PL spectra of the ZnSSeTe la

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HSIAO, I.-PING, and 蕭怡萍. "Hydrothermal Synthesized ZnO-based Nanowire Arrays for MSM and p-n Junction Ultraviolet Photodetector Applications." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/yvvm58.

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碩士<br>逢甲大學<br>材料科學與工程學系<br>107<br>In this study, ZnO-based nanowires arrays were grown on p-GaN thin film by the low-temperature hydrothermal method for fabrication p-n heterojunction ultraviolet (UV) photodetectors. The author reported that comparison of the microstructural festures and photoelectrical properties between ZnO, Ga-doped ZnO (GZO), In-doped ZnO (IZO) and Ga-In co-doped ZnO (GIZO) heterojunction ultraviolet photodetectors. Experiemntal results showed that the UV photodetectors based on GIZO nanowires exhibited the highest photoconductivity gain and sensitivity of 4.24x104 under z

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CHEN, SHIH-HSUH, and 陳世勳. "The Study of MgxZn1-xO MSM Photodetector with Different Mg content by RF Magnetron Sputter." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/qe94m3.

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碩士<br>南臺科技大學<br>電子工程系<br>106<br>In this study, the MgZnO thin films with various Mg contents were deposited on the quartz substrate by RF magnetron sputtering. The electrical and optical properties of the metal-semicoductor-metal ultraviolet (UV) photodetectors by different annealing treatments were investigated. After annealing, the properties of MgZnO thin films were characterized by SEM, XRD, and XPS. There are two stages in our experiment: the first stage is the properties MgZnO thin films with 10% and 20% magnesium contents were deposited and analyzed. At an annealing temperature of 700

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Liu, Chen-Hui, and 劉鎮輝. "The study of Nitride-based Schottky diode and MSM photodetector with SiN/GaN double buffer layer." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/37518490094420203407.

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碩士<br>國立成功大學<br>奈米科技暨微系統工程研究所<br>95<br>In this thesis, the nitride-based III-V alloys with SiN/GaN double buffer layer had been grown and characterized by metal organic chemical vapor deposition system (MOCVD). In order to realize high quality epitaxial layer, the growth conditions, such as Si2H6 flow, SiN growth temperature and growth time had been optimized. Several analysis techniques, such as Hall measurement, photoluminescence (PL), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) had also been performed to characterize the crystal quality of

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Padhy, Santosh Kumar. "Effects of Finger Width & Finger Spacing on the Electrical Performance of W/CDS Based MSM Photodetector." Thesis, 2015. http://ethesis.nitrkl.ac.in/7303/1/2015_Effects_Padhy.pdf.

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The metal-semiconductor-metal (MSM) alignment one of the favourable, having the benefit for its simple structure and high detection bandwidths be reach up to gigahertz ranges, constructing them appropriate for very fast on-chip optical connects, and optical communication systems. The detector property parameters like quantum efficiency and response time, stand closely associated to the bounds of electrode geometry plus optical immersion layer, wideness, etc. However, the effect of the device structure on its performance is rarely studied, which limits the development of MSM detectors. MSM stru

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Tu, Li-Ping, and 杜麗萍. "High-Sensitivity Planar Si-Based MSM Photodetector with Very Thin Amorphous Silicon-Alloy Quantum-Well-Like Barrier Layers." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/96627656920503519878.

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碩士<br>國立中央大學<br>電機工程研究所<br>91<br>Abstract The planar Si-based metal-semiconductor-metal photodetectors (MSM-PDs) with a-Si:H/a-SiC:H (or a-Si:H/a-SiGe:H) multi-layers to reduce device dark current had been studied. For the ones with a-Si:H/a-SiC:H multi-layers, their sensitivity could be enhanced very effectively. Under a very weak incident light power (0.5 μW) and with a 4 V bias-voltage, the device photo- to dark- current ratio (Ip/Id) could be 103 times higher than that of the previously reported one. Also, the average full-width-at-half-maximum (FWHM) and fall-time of the device temp

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Ghanbarzadeh, Sina. "High Performance, Low Cost Lateral Metal-Semiconductor-Metal Photodetector for Large Area Indirect X-Ray Imaging." Thesis, 2013. http://hdl.handle.net/10012/8023.

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The most promising technology for radiography is active matrix flat panel imaging systems (AMFPI). However, AMFPI systems are relatively expensive in comparison with conventional computed radiography (CR) systems. Therefore for general radiography applications low cost systems are needed, especially in hospitals and healthcare systems of the developing countries. The focus of this research is the fabrication and characterization of a low cost amorphous silicon metal-semiconductor-metal photodetector as a photosensitive element in a AMFPI systems. Metal-Semiconductor-Metal photodetectors (MSM-P

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Wei, Yen-Lin, and 魏燕伶. "Low Dark-Current and High-Thermal Stability Planar Si-Based MSM Photodetector with Thin Amorphous Silicon-Alloy Grade Superlattice-Like Multilayers." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/14862598373930300026.

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碩士<br>國立中央大學<br>電機工程研究所<br>92<br>Abstract The alternated i-a-Si:H/i-a-SiGe:H grade superlattice-like layer (GSL) was firstly introduced in planar Si-based metal-semiconductor-metal photodetectors (MSM-PD’s) to smooth the abrupt band discontinuity between the c-Si and i-a-Si:H heterojunction. It was demonstrated that the i-a-Si:H/i-a-SiGe:H GSL structure could drastically improve the disorder-caused disadvantages of i-a-SiGe:H composition-graded layer (CGL), and effectively suppress the device dark-current, improve its temporal response without raising its knee-voltage like thick and high

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廖俊豪. "Characteristics of MSM Photodetectors." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/86805213865759361694.

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碩士<br>國立中央大學<br>電機工程研究所<br>88<br>In this thesis, first, the metal-semiconductor-metal photodetectors (MSM-PDs) with a graded hydrogenated intrinsic amorphous silicon-germanium (i-a-Si1-xGex:H) film deposited on [100] n-type silicon wafer, and the Cr top-electrodes have been studied. The effects of elapsed-time during growing graded i-a-Si1-xGex:H layer, substrate temperature and H2-annealing on device characteristics were compared and discussed. Then, the fabrication process and characteristics of the MSM-PDs with self-aligned trench-electrodes were investigated. Their obtainable c

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Tasi, Hsin-Ting, and 蔡馨婷. "Fabrication of GaN-based nanostructures and MSM photodetectors." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/16548000523838222182.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>92<br>In the thesis, we form the self-organized GaN nanotips by ICP system which is making use of quartz to form nanomask on GaN sample. The theory is making use of SiO2 of the quartz. The quartz plate is sputtered by Cl+ ions accelerated by cathode bias voltages of -370V to -570V, and then neutral and ionized SiO2 particles are generated. Low-energy SiO2 within the scattered SiO2 particles from the quartz is easily ionized by electron and ion impact in the plasma because of its low speed which has long residence time in the plasma. The diameter of the GaN nanot

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Peng, Shi Ming, and 彭士銘. "UV MSM photodetectors with selective growth ZnO nanorods." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/98h5dx.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>96<br>In the study, metal–insulator–semiconductor (MSM) ultraviolet photodetectors with selective growth ZnO nanorods(NRs) were fabricated The ZnO seed layers were prepared on corning glass substrates by radio frequency (rf) sputter. The morphology of ZnO seed layer, pH, growth temperature, and concentration of zinc salt in aqueous solution were important parameters to determine growth characteristics such as average diameters and lengths of ZnO nanorods. In addition, it was found the different nanostructures by adjusting parameter. ZnO seed layers were prep

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Tse-PuChen and 陳則甫. "The Study of GaN Schottky Barrier Photodetectors and MSM Photodetectors with Different Templates." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/90685332980323548669.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>98<br>In this thesis, the nitride-based III-V alloys with patterned sapphire substrate or nanorod template had been grown and characterized by metalorganic chemical vapor deposition (MOCVD). Then, the Schottky barrier photodetectors and MSM photodetectors were fabricated. This thesis is made up of two parts. In the first part, we focused on a high quality GaN Schottky barrier photodetector was prepared on patterned sapphire substrates (PSS) by metalorganic chemical vapor deposition. Comparing with the PD prepared on conventional flat sapphire substrate, it w

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Lu, De-En, and 盧德恩. "Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/39002740444683125017.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>97<br>To improve the optoelectronic characteristics and low frequency noise of GaN/AlGaN metal-semiconductor-metal photodetectors (MSM-PDs), the chlorination surface treatment is applied in fabrication. Furthermore, a photoelectrochemical oxidation method is used to directly grow the oxide film of GaN between the interdigital electrodes of GaN/AlGaN MSM-PDs. This acts as a passivation layer to improve the characteristics of GaN/AlGaN MSM-PDs. The interface between metal and semiconductors is important for GaN-based devices due to the existence of surface states

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Wang, Jyh-Yen, and 王志延. "Characteristics of Porous Silicon Metal-Semiconductor-Metal Photodetectors (MSM-PDs)." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/68036530869609290787.

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Hsu, Wen-Hsuan, and 許文炫. "The Stress Analysis of GaN MSM Photodetectors with TiW Electrodes." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/14581437519502063016.

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碩士<br>南台科技大學<br>電子工程系<br>96<br>In this thesis, the reliability of GaN MSM photodetectors with TiW electrode was analyzed and characterized under different stressing condition. The result showed that the dark current and responsivity of devices decayed with the aging temperature and aging current. Moreover, the aging current density was a key factor for device at room temperature. The failure mode was also studied in this thesis. It was found that the burned-fail electrode was one of the failure reasons using optical microscope inspection. The other reason for reliability is the decadation of G

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Hsu, Chew-Wei, and 許晁瑋. "InGaN based MSM Photodetectors Fabricated by Photoenhanced Chemical Wet Etching Technique." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/34099709980978028301.

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碩士<br>國立成功大學<br>奈米科技暨微系統工程研究所<br>96<br>Wild band gap material such as III-V compound are attracted in well electronic property of high chemical stability, high mobility, high thermal stability, and high breakdown voltage. The structure of InGaN based MSM photodetectors are epitaxied on sapphire substrate by MOCVD system. As result of the high lattice mismatch between InGaN and sapphire, the epitaxal quality is poor. Thus, the objective of this research is to design the appropriate device structure for InGaN based MSM, MOS, and heterojunction PDs to improve the device performance. On the other

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Muazzam, Usman Ul. "Investigation of Growth, Structural and Optical properties of different phases of Ga2O3." Thesis, 2023. https://etd.iisc.ac.in/handle/2005/6127.

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Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention in recent years due to its excellent properties, including direct ultra wide band gap, optical transparency, high excitonic binding energy. These properties makes it a potential candidate for deep UV optoelectronics and power electronics applications. The Ga2O3 exhibits polymorphism which includes at least α-, β-, γ- and ϵ-/κ- phases. Among these phases most of the research has been carried out on thermodynamically stable β-polyphase, whose highly asymmetric crystal structure imparts highly non-iso

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Chen, Shin-Wei, and 陳世偉. "Characteristics of Amorphous MSM-Photodetectors with ITO Transparent Electrodes and Reflection Layer." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/78150588954933983621.

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碩士<br>國立中央大學<br>電機工程學系<br>86<br>In this thesis, the metal-semiconductor-metal photodetectors (MSM-PD's) with a hydrogenated amorphous silicon (a-Si:H) film deposited on the Corning 7059 glass substrate were studied. The i-a-Si:H and n-a-Si:H films were deposited on the Corning 7059 glass substrate with a RF capacitor-coupled parallel-plate plasma enhanced chemical vapor deposition (PECVD) system. The device a with reflection layer had a higher responsivity than that of the similar one witho

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Laih, Li-Hong, and 賴利弘. "IMPROVING THE OPTOELECTRONIC CHARACTERISTICS OF AMORPHOUS METAL- SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PDs)." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/80008220095179159970.

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碩士<br>國立中央大學<br>電機工程研究所<br>83<br>In this thesis, six types of planar metal-semiconductor- metal photodetectors (MSM-PDs) made of hydrogenated amorphous silicon (a-Si:H) and its alloys on silicon wafer and Corning 7059 glass substrate were studied. To improve the responsivity of device,the transparent ITO(Indium-Tin-Oxide) metal was sputtered onto the i-a-Si:H layer. Experimentally, an increase of 2~3 times of the device responsivity was observed. The top-electrode device fabricated

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Chen, Ho-Chien, and 陳和謙. "The study of AlInGaN MSM photodetectors and InGaN/GaN MQW optical devices." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/23665569394581152279.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>94<br>Abstract In this thesis, we fabricated Metal-Semiconductor-Metal photodetectors with quaternary AlInGaN as the active layer. At first, we will investigate the effect of thermal annealing on the fabricated devices by the annealing treatment. With a 5V bias, it was found that the dark current of device could be reduced from 3.39×10-6A to 25.4×10-12A by annealing at 550℃ for 3 minutes under O2 ambient. The photo-dark contrast ratio and the rejection ratio in spectral response of 550℃ annealed MSM photodetector were both larger than the as-deposited one. T

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Shih, Hsin-Wei, and 施心偉. "The Substrate-induced Effect of GaN MSM Photodetectors Prepared on Silicon Substrate." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/04879560416245324218.

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碩士<br>南台科技大學<br>電子工程系<br>97<br>GaN metal-semiconductor-metal photodetectors（MSM PDs）on silicon substrates and sapphire substrates were fabricated and characterized, respectively. We found that the current-voltage（I-V）characteristics of MSM PDs on the silicon substrate could be approximated by the Poole-Frenkel conduction behavior. This phenomenon was attributed to the presence of the micro-grain structure in the silicon-substrate epitaxy layer. The voltage-dependent responsivity of GaN MSM PDs on the silicon substrate was also evidence of the micro-grain inside the epitaxy layer. At a low freq

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Lee, Ke-Wei, and 李格瑋. "Investigation and Fabrication of AlGaN/GaN Heterojunction Metal-Semiconductor-Metal (MSM) Photodetectors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/51570307084247432410.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>In this dissertation, the structure of GaN–based Schottky diodes and MSM photodetectors were epitaxied on Al2O3 (sapphire) substrates by metalorganic chemical vapor deposition system (MOCVD). Due to the Schottky contact characteristics of the diodes were directly related to performances of the MSM photodetectors, the Schottky diodes were fabricated formerly. We needed to take account of some Schottky parameters including the Schottky barrier height ΦB and the ideality factor n to ensure that devices have better Schottky contact. We also fabricated the AlGa

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Yao, Chen-Hua, and 姚真華. "A Study of Integrated Microchip Electrophoresis with AZO Transparent Electrodes ZnSe MSM Photodetectors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/26193217706594000523.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>96<br>In this study the analysis of transparent material AZO conductive films, MSM photodetectors, and the production of microchannels for biochips were explored. The MSM photodetector and the biochip were then eventually combined to create a florescence detection system. For the production of a photodetector, ZnSe was used as the adsorption material for blue light. For the electrode, a highly transparent AZO electrode was used. The materials were then analyzed to produce a photodetector with better responsivity and quantum efficiency, and the properties of the devi

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Chang, Chia-Sheng, and 張佳勝. "SiO2 Grown by Photo-CVD and it's Application of SiC MSM/MIS Photodetectors." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/15846905695573747246.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>90<br>Owing to the high melt-point, high thermal-conductivity, high carrier saturation velocity, high breakdown field and obviously chemical inactivation of SiC materials, MSM photodetectors were applied on SiC. Transparent electrodes ITO were used on photodetectors in order to enhance the photo response. However, due to the low Schottky barrier height of ITO/SiC, the dark-current of MSM photodetectors was too large. In order to keep the transmittance of light and the high Schottky barrier height, thin Ni films were used to suppress the dark-current on photodete

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Yang, Bo active 21st century. "III-V nitride semiconductor-based ultraviolet photodetectors." Thesis, 2003. http://hdl.handle.net/2152/29863.

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Visible-blind and solar-blind ultraviolet photodetectors based on GaN/AlGaN were designed, fabricated, and characterized for commercial and military applications. High performance back-illuminated solar-blind MSM achieved external quantum efficiency of ~48%. The dark current of 40x40μm MSM was less than the instrument measurement limitation of 20fA for a bias <100V. No photoconductive gain was observed. With an n-type doped high-Al ratio "window" Al₀.₆Ga₀.₄N layer, back-illuminated solar-blind p-i-n photodiode achieved a quantum efficiency of ~55% at zero-bias. Absorption edge study of both MS

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