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Journal articles on the topic 'MSM photodetector'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Ramle, Mohamad Rafiudin, Rosfariza Radzali, Alhan Farhanah Abd Rahim, et al. "Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth." Key Engineering Materials 946 (May 25, 2023): 87–92. http://dx.doi.org/10.4028/p-v731ho.

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In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with different pore depth were designed and simulated to investigate the effect of pore depth on the optical and electrical properties of GaAs semiconductor. The pore depth of porous GaAs structure was varied with 2, 4, 6 and 8 μm. The porous GaAs structures were then tested for the metal-semiconductor-metal (MS

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2

Tsai, Shang Yu, Ching-Chang Lin, Cheng-Tang Yu, et al. "Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal–Semiconductor–Metal Photodetectors with Liquid-Phase Procedure." Nanomaterials 12, no. 14 (2022): 2428. http://dx.doi.org/10.3390/nano12142428.

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Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced

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3

Zhou, Haitao, Lujia Cong, Jiangang Ma, Bingsheng Li, Haiyang Xu, and Yichun Liu. "Suppression of persistent photoconductivity in high gain Ga₂O₃ Schottky photodetectors*." Chinese Physics B 30, no. 12 (2021): 126104. http://dx.doi.org/10.1088/1674-1056/ac2d1b.

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The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga2O3 Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal–semiconductor–metal (MSM) Schottky photodetector, a unidirectional Schottky photodetector, and a photoconductor were constructed on Ga2O3 films. The MSM Schottky devices have high gain (> 13) and high responsivity (> 2.5 A/W) at 230–250 nm, as well as slow recovery speed caused by PPC. Interestingly, applying a positive pulse voltage to the reverse-biased Ga2O3/Au Schottk

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4

Das, K., S. Mukherjee, S. Manna, S. K. Ray, and A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity." Nanoscale 6, no. 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.

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Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>10<sup>4</sup> A W<sup>−1</sup>) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

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5

Hou, Yaonan, Menno Kappers, Chaoyuan Jin, and Rachel Oliver. "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN." Applied Physics Letters 120, no. 20 (2022): 202101. http://dx.doi.org/10.1063/5.0094454.

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We report a GaN based metal–semiconductor–metal (MSM) infrared photodetector enabled with azimuthally distributed sub-wavelength gratings fabricated on one of the working electrodes. Under illumination, hot electron transfer is introduced by the plasmonic resonance in the infrared waveband formed at the interface of Au/GaN. Without the help of using any external optical polarizers, the device is able to detect radial polarization vortices in the form of photocurrents with a prescribed response spectrum. The detector exhibits a 10%–90% rise and fall time of 0.9 ms under modulated light, much fa

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6

Thahe, Asad A., Motahher A. Qaeed, Suhail Najm Abdullah, et al. "Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio." Journal of Nanomaterials 2023 (April 26, 2023): 1–11. http://dx.doi.org/10.1155/2023/6576028.

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Despite several attempts to enhance the electrical and charge carrier transport characteristics of porous silicon (PSi), the requisite conditions for optimally synthesizing n-PSi with appealing optoelectronic properties are yet to be achieved. Therefore, this research explores the effect of the chemical ratio of precursor materials (HF:C2H6O:H2O2) on the surface morphology, crystalline structure, and optical and electric properties of PSi. The PSi was produced by photoelectrochemical etching followed by anodization of the n-type Si under light illumination. The properties of the as-prepared PS

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7

Porges, M., J. S̆afranková, T. Lalinský, et al. "Asymmetric (Schottky-ohmic) MSM photodetector." Solid-State Electronics 38, no. 2 (1995): 425–27. http://dx.doi.org/10.1016/0038-1101(94)e0082-p.

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8

Doğan, Ümit, Fahrettin Sarcan, Kamuran Kara Koç, Furkan Kuruoğlu, and Ayşe Erol. "Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector." Physica Scripta 97, no. 1 (2022): 015803. http://dx.doi.org/10.1088/1402-4896/ac4634.

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Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an i

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9

Landheer, D., Z. M. Li, S. P. McAlister, and D. A. Aruliah. "Modeling of ultrafast metal–semiconductor–metal photodetectors." Canadian Journal of Physics 69, no. 3-4 (1991): 520–26. http://dx.doi.org/10.1139/p91-085.

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We have simulated the transient response of metal–semiconductor–metal (MSM) photodetectors to an optical impulse, using a two-dimensional (2-D) drift-diffusion model that incorporates deep traps and appropriate boundary conditions. We incorporate the external circuit using a method originally developed to describe photoconductors in transmission lines. Initially a one-dimensional (1-D) simulation is used to verify our model comparing our results to previous 1-D calculations and experimental results for GaAs MSM detectors. Then a full 2-D analysis is used to predict the performance of a novel M

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10

MacDonald, R. P., N. G. Tarr, B. A. Syrett, S. A. Boothroyd, and J. Chrostowski. "MSM photodetector fabricated on polycrystalline silicon." IEEE Photonics Technology Letters 11, no. 1 (1999): 108–10. http://dx.doi.org/10.1109/68.736410.

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11

Hetterich, J., G. Bastian, N. A. Gippius, S. G. Tikhodeev, G. von Plessen, and U. Lemmer. "Optimized Design of Plasmonic MSM Photodetector." IEEE Journal of Quantum Electronics 43, no. 10 (2007): 855–59. http://dx.doi.org/10.1109/jqe.2007.902934.

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12

Soole, J. B. D., H. Schumacher, R. Esagui, M. A. Koza, and R. Bhat. "Waveguide integrated MSM photodetector on InP." Electronics Letters 24, no. 24 (1988): 1478. http://dx.doi.org/10.1049/el:19881009.

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13

Su, Yuanjie, Shibin Li, Zhiming Wu, et al. "High responsivity MSM black silicon photodetector." Materials Science in Semiconductor Processing 16, no. 3 (2013): 619–24. http://dx.doi.org/10.1016/j.mssp.2012.11.008.

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14

Dröge, E., E. H. Böttcher, St Kollakowski, et al. "78 GHz distributed InGaAs MSM photodetector." Electronics Letters 34, no. 23 (1998): 2241. http://dx.doi.org/10.1049/el:19981533.

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15

R. Sabity, Mowj, and Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS." Journal of Engineering and Sustainable Development 26, no. 5 (2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.

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Flexible electronics and optoelectronics devices attract further attention in recent years. In this paper, we present the fabrication and photodetection properties of a flexible metal-semiconductor-metal UV photodetector based on a thin ZnO film with Pd Schottky electrodes. The active ZnO layer was created using a hydrothermal method on ITO/PET flexible substrates. Palladium employed as back-to-back Schottky contacts. Metal masks are designed and used to deposit palladium via thermal evaporation. To demonstrate the impact of ZnO on flexible substrates, the structural, optical, and electrical c

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16

YAN Xin, 闫欣, 汪韬 WANG Tao, 尹飞 YIN Fei, et al. "InGaAs-MSM Photodetector with Low Dark Current." ACTA PHOTONICA SINICA 44, no. 6 (2015): 604002. http://dx.doi.org/10.3788/gzxb20154406.0604002.

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17

Burroughes, J. H. "H-MESFET compatible GaAs/AlGaAs MSM photodetector." IEEE Photonics Technology Letters 3, no. 7 (1991): 660–62. http://dx.doi.org/10.1109/68.87946.

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18

Aboudou, A., J. P. Vilcot, D. Decoster, et al. "Ultralow dark current GaAlAs/GaAs msm photodetector." Electronics Letters 27, no. 10 (1991): 793–95. http://dx.doi.org/10.1049/el:19910497.

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19

Löken, M., L. Kappius, S. Manti, and Ch Buchal. "Fabrication of ultrafast Si based MSM photodetector." Electronics Letters 34, no. 10 (1998): 1027. http://dx.doi.org/10.1049/el:19980661.

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20

Zhang, Dezhong, Fuyi Jing, Fengli Gao, et al. "Enhanced performance of a TiO2 ultraviolet detector modified with graphene oxide." RSC Advances 5, no. 102 (2015): 83795–800. http://dx.doi.org/10.1039/c5ra17023k.

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21

Liu, Xinyu, Hao Ning, Jianhang Lv, et al. "High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared." Applied Physics Letters 122, no. 7 (2023): 071105. http://dx.doi.org/10.1063/5.0132028.

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Metal–semiconductor–metal (MSM) structures have been widely used and extensively investigated for ultraviolet (UV) detection. However, traditional MSM structures suffer from large dark currents, narrow detection bands, and low collection efficiency. Optimizing these properties for broadband detection in MSM structures is essential for improving the performance and functionality in broader optoelectronics applications. We report a high-performance broadband graphene/thin silicon/graphene photodetector by realizing a synergistic combination of graphene and silicon absorption bandwidths from the

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22

Yin, Xiangfei, Genyou Liu, and Shilong Cao. "Design of Laser Ranging Device Using the Improved Photodetector and Its Usage in Geosynchronous Earth Orbit Navigation Satellite Orbit Determination." Journal of Nanoelectronics and Optoelectronics 15, no. 12 (2020): 1508–17. http://dx.doi.org/10.1166/jno.2020.2900.

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The geosynchronous earth orbit (GEO) satellites have good coverage performance and are widely used in WAAS, BDS, CAPS and other regional augmentation and regional navigation systems. At the same time, the precise orbit determination and prediction of such satellites play a significant role in high-precision navigation and user real-time positioning. In order to obtain higher accuracy of orbit determination, the laser ranging device is improved by equipping with a silicon-substrate germanium MSM photodetector in this study. In addition, the surface plasmon resonance augmentation effect is furth

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23

Yue, Zhongyu. "Photoelectric properties and persistent photoconductivity of GaN-based ultraviolet photodetectors." Journal of Physics: Conference Series 2563, no. 1 (2023): 012032. http://dx.doi.org/10.1088/1742-6596/2563/1/012032.

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Abstract Persistent photoconductivity deeply affects the performance of the photodetector, and has been studied in a variety of semiconductor optoelectronic devices. In this work, AlGaN/GaN metal-heterojunction-metal (MHM) ultraviolet (UV) detectors and GaN metal-semiconductor-metal (MSM) ultraviolet detectors were prepared using transverse Schottky contacts, and characterized at different temperatures, light intensity and bias voltage. The two-dimensional electron gas (2-DEG) at the Schottky heterojunction of AlGaN and GaN is used to generate high-speed electron mobility, which significantly

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24

Eladl, Sh M., and M. A. Ashour. "Temporal Response of MSM-LED Optical Integrated Device." Journal of Atomic, Molecular, and Optical Physics 2011 (March 29, 2011): 1–4. http://dx.doi.org/10.1155/2011/756758.

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The temporal response of an optical integrated device is theoretically analysed. The device is composed of a Metal-Semiconductor-Metal (MSM) Photodetector and a Light Emitting Diode (LED). The analysis is based on the frequency response of the constituent devices without any optical feedback within the device structure. All expressions describing the frequency response, time response, output derivatives, and rise time are outlined. The results show that the temporal response of MSM detectors is similar to the LED response if the cutoff frequency of the LED is lower than that of MSM, while it i

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25

Zhou, Lin, Kai Yu, Fan Yang, et al. "All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance." Dalton Transactions 46, no. 6 (2017): 1766–69. http://dx.doi.org/10.1039/c6dt04758k.

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26

Ściana, B., I. Zborowska-Lindert, D. Pucicki, et al. "Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications." Opto-Electronics Review 16, no. 1 (2008): 1–7. http://dx.doi.org/10.2478/s11772-007-0034-4.

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AbstractThe nitrogen-containing conventional AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNx/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their stru

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27

ATIWONGSANGTHONG, N., S. NIEMCHAROEN, and W. TITIROONGRUANG. "NANOPOROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR." Journal of Nonlinear Optical Physics & Materials 19, no. 04 (2010): 713–21. http://dx.doi.org/10.1142/s0218863510005637.

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In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al /nanoporous silicon Schottky-barrier jun

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28

Al-Jumaili, Batool Eneaze B., Zainal A. Talib, Asmiet Ramizy, et al. "Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector." Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/1890364.

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Achieving a cheap and ultrafast metal-semiconductor-metal (MSM) photodetector (PD) for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi) based MSM PD with platinum (Pt) contact electrodes. Such NPSi samples are grown from n-type Si (100) wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocry

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29

Yong, Li, Li Gang, Shen Hongbin, Zhong Wenzhong, and Li Liang. "Design and simulation research of InGaAs-MSM photodetector." Journal of Applied Optics 37, no. 5 (2016): 510–16. http://dx.doi.org/10.5768/jao201637.0501003.

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30

Gvozdic, Dejan M., Predrag L. Nikolic, and Jovan B. Radunovic. "Optimization of a resonant cavity enhanced MSM photodetector." Semiconductor Science and Technology 15, no. 6 (2000): 630–37. http://dx.doi.org/10.1088/0268-1242/15/6/326.

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31

Assefa, Solomon, Fengnian Xia, Stephen W. Bedell, et al. "CMOS-integrated high-speed MSM germanium waveguide photodetector." Optics Express 18, no. 5 (2010): 4986. http://dx.doi.org/10.1364/oe.18.004986.

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32

Abud, Saleh H., Z. Hassan, F. K. Yam, and C. W. Chin. "Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N." Measurement 50 (April 2014): 172–74. http://dx.doi.org/10.1016/j.measurement.2014.01.016.

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33

Yu, L. Z., and C. R. Wie. "Study of MSM photodetector fabricated on porous silicon." Sensors and Actuators A: Physical 39, no. 3 (1993): 253–57. http://dx.doi.org/10.1016/0924-4247(93)80227-8.

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34

Tsay, Chien-Yie, Shih-Ting Chen, and Man-Ting Fan. "Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors." Coatings 9, no. 4 (2019): 277. http://dx.doi.org/10.3390/coatings9040277.

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The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of t

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35

Das, Narottam, Ayman Karar, Chee Leong Tan, Mikhail Vasiliev, Kamal Alameh, and Yong Tak Lee. "Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings*." Pure and Applied Chemistry 83, no. 11 (2011): 2107–13. http://dx.doi.org/10.1351/pac-con-11-01-13.

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We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs.

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36

Li, Eric Y., Andrew F. Zhou, and Peter X. Feng. "High-Performance Nanoplasmonic Enhanced Indium Oxide—UV Photodetectors." Crystals 13, no. 4 (2023): 689. http://dx.doi.org/10.3390/cryst13040689.

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In this paper, high-performance UV photodetectors have been demonstrated based on indium oxide (In2O3) thin films of approximately 1.5–2 μm thick, synthesized by a simple and quick plasma sputtering deposition approach. After the deposition, the thin-film surface was treated with 4–5 nm-sized platinum (Pt) nanoparticles. Then, titanium metal electrodes were deposited onto the sample surface to form a metal–semiconductor–metal (MSM) photodetector of 50 mm2 in size. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to study the crystal structure of the synthesized In

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37

Xiang, A., W. Wohlmuth, P. Fay, Sung-Mo Kang, and I. Adesida. "Modeling of InGaAs MSM photodetector for circuit-level simulation." Journal of Lightwave Technology 14, no. 5 (1996): 716–23. http://dx.doi.org/10.1109/50.495150.

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38

Yoshikawa, Akira, Saki Ushida, Kazuhiro Nagase, et al. "High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector." Applied Physics Letters 111, no. 19 (2017): 191103. http://dx.doi.org/10.1063/1.5001979.

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39

Martuza, Muhammad A., Sina Ghanbarzadeh, Czang-Ho Lee, Celal Con, and Karim S. Karim. "Nanocrystalline Silicon Lateral MSM Photodetector for Infrared Sensing Applications." IEEE Transactions on Electron Devices 65, no. 2 (2018): 584–90. http://dx.doi.org/10.1109/ted.2017.2782769.

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40

Dhyani, Veerendra, and Samaresh Das. "High speed MSM photodetector based on Ge nanowires network." Semiconductor Science and Technology 32, no. 5 (2017): 055008. http://dx.doi.org/10.1088/1361-6641/aa65b4.

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41

Averin, S. V., P. I. Kuznetsov, V. A. Zhitov, L. Yu Zakharov, and N. V. Alkeev. "An ultraviolet MSM photodetector with electrically tunable spectral sensitivity." Journal of Communications Technology and Electronics 58, no. 3 (2013): 273–76. http://dx.doi.org/10.1134/s1064226913030029.

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42

Abd Rahim, A. F., M. R. Hashim, and N. K. Ali. "High sensitivity of palladium on porous silicon MSM photodetector." Physica B: Condensed Matter 406, no. 4 (2011): 1034–37. http://dx.doi.org/10.1016/j.physb.2010.12.056.

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43

Song, K. C., M. A. Matin, B. Robinson, J. G. Simmons, D. A. Thompson та P. Mascher. "High performance MSM photodetector operating at 1.3-1.5 μm". Solid-State Electronics 39, № 9 (1996): 1283–87. http://dx.doi.org/10.1016/0038-1101(96)00044-5.

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44

Wang, Chun-Kai, Yu-Zung Chiou, Shoou-Jinn Chang, et al. "GaN MSM UV Photodetector With Sputtered AlN Nucleation Layer." IEEE Sensors Journal 15, no. 9 (2015): 4743–48. http://dx.doi.org/10.1109/jsen.2015.2425657.

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45

Lin, S. M., F. H. Huang, C. K. Lin та ін. "A novel 1.55 μm dual-mode SSO/MSM photodetector". IEEE Photonics Technology Letters 15, № 10 (2003): 1440–42. http://dx.doi.org/10.1109/lpt.2003.818255.

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46

Hsieh, Li Zen, and Jun Yan Chang. "Current Characteristics of AlGaN/AlN Ultraviolet Photodetector with Metal-Semiconductor-Metal Structure." Applied Mechanics and Materials 300-301 (February 2013): 1285–88. http://dx.doi.org/10.4028/www.scientific.net/amm.300-301.1285.

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An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A r

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47

Li, Yu Bo, Jian Wei Zhong, Li Ming Zhou, et al. "Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film." Materials Science Forum 879 (November 2016): 1117–22. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1117.

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Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate

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48

Mahmood, Ainorkhilah, Zainuriah Hassan, Naser Mahmoud Ahmed, Ellis Shahiri, Alhan Farhanah Abd Rahim, and Mohamad Syarizal Abdullah. "Visible Luminescence of Nanoporous Silicon Using Alternating Current Photo-Assisted Electrochemical Etching for Potential MSM Photodetector." Materials Science Forum 846 (March 2016): 274–82. http://dx.doi.org/10.4028/www.scientific.net/msf.846.274.

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The formation of nanocrystalline porous silicon (PS) was successfully prepared under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching condition of an n-type (100) silicon (Si) substrate under the illumination of an incandescent white light. As grown Si and PS through conventional direct current(DC) anodization were also included for comparison. The ACPEC formed porous Silicon (PS) with excellent structural and surface morphological characteristic. According to the field emission scanning electron microscope (FESEM) micrographs, the nanoporous

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Hameed, Hussein Abdullah. "Enhanced Ultraviolet Photodetector Based on Mg-Doped ZnO Nanorods Films." Al-Mustansiriyah Journal of Science 29, no. 3 (2019): 158. http://dx.doi.org/10.23851/mjs.v29i3.636.

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Magnesium-doped zinc oxide (ZnO: Mg) nanorods and nanotubes films were prepared by hydrothermal method deposited on glass substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), photoluminescence (PL), and optical absorption spectroscopy (UV) were performed to characterize the prepared films. X-ray diffraction analysis showed a decrease in the lattice parameters of Mg doped ZnO NRs. The Photoluminescence of the undoped and Mg-doped ZnO NRs displayed a near band edge. At 10 V bias, the metal-semiconductor-metal (MSM) ultraviolet (UV)

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Ahmad, H., and T. M. K. Thandavan. "High photoresponsivity and external quantum efficiency of ultraviolet photodetection by mechanically exfoliated planar multi-layered graphene oxide sheet prepared using modified Hummer's method and spin coating technique." Materials Express 10, no. 7 (2020): 998–1009. http://dx.doi.org/10.1166/mex.2020.1717.

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Electron–hole (e–h) pair generation and conversion into photocurrents by two-dimensional (2D) nanoparticle based metal semiconductor metal (MSM) structured photodetector is crucial for the development self-powered and high performance photodetectors. In this regard, graphene oxide (GO) is a highly suitable photoconducting material alongside graphene and reduced graphene oxide (rGO). A modified Hummer's method is applied to obtain the GO supernatant which undergoes morphological, structural and vibrational characterizations. The D and G bands observed at 1347 and 1592 cm–1 from the spectral ana

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