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Relevant bibliographies by topics / Multi Quantum well lasers

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Academic literature on the topic 'Multi Quantum well lasers'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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Journal articles on the topic "Multi Quantum well lasers"

1

Bouley, J. C., and G. Destefanis. "Multi-quantum well lasers for telecommunications." IEEE Communications Magazine 32, no. 7 (July 1994): 54–60. http://dx.doi.org/10.1109/35.295945.

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Stange, Daniela, Nils von den Driesch, Thomas Zabel, Francesco Armand-Pilon, Denis Rainko, Bahareh Marzban, Peter Zaumseil, et al. "GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers." ACS Photonics 5, no. 11 (October 19, 2018): 4628–36. http://dx.doi.org/10.1021/acsphotonics.8b01116.

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Hofstetter, Daniel, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, and Clarence Dunnrowicz. "Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 69–74. http://dx.doi.org/10.1557/s1092578300002258.

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We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1.1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

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Ohtoshi, Tsukuru, Tsuyoshi Uda, and Naoki Chinone. "Calculated Threshold Current Densityof Multi-Quantum-Well Wire Lasers." Japanese Journal of Applied Physics 26, Part 1, No. 2 (February 20, 1987): 236–38. http://dx.doi.org/10.1143/jjap.26.236.

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Qian, Fang, Yat Li, Silvija Gradečak, Hong-Gyu Park, Yajie Dong, Yong Ding, Zhong Lin Wang, and Charles M. Lieber. "Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers." Nature Materials 7, no. 9 (August 17, 2008): 701–6. http://dx.doi.org/10.1038/nmat2253.

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DeLeonardis, F., and V. M. N. Passaro. "Accurate physical modelling of multi quantum well ring lasers." Laser Physics Letters 2, no. 2 (February 1, 2005): 59–70. http://dx.doi.org/10.1002/lapl.200410146.

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Smowton, P. M., G. M. Lewis, A. Sobiesierski, P. Blood, J. Lutti, and S. Osbourne. "Non-uniform carrier distribution in multi-quantum-well lasers." Applied Physics Letters 83, no. 3 (July 21, 2003): 419–21. http://dx.doi.org/10.1063/1.1593818.

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Ogasawara, Nagaatsu, Ryoichi Ito, and Ryuji Morita. "Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well Lasers." Japanese Journal of Applied Physics 24, Part 2, No. 7 (July 20, 1985): L519—L521. http://dx.doi.org/10.1143/jjap.24.l519.

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Ohtoshi, T., K. Uomi, N. Chinone, T. Kajimura, and Y. Murayama. "Calculated gain and spontaneous spectra of multi‐quantum‐well lasers." Journal of Applied Physics 57, no. 3 (February 1985): 992–94. http://dx.doi.org/10.1063/1.334708.

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Uomi, Kazuhisa. "Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory." Japanese Journal of Applied Physics 29, Part 1, No. 1 (January 20, 1990): 81–87. http://dx.doi.org/10.1143/jjap.29.81.

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Dissertations / Theses on the topic "Multi Quantum well lasers"

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RAJASEKARAN, RAJASUNDARAM. "Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1155791964.

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Prosyk, Kelvin. "Power and spectral characterization of InGaAsP-InP multi-quantum well lasers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0008/NQ42759.pdf.

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Jones, Brynmor Edward. "ZnCdMgSe and AlGalnP multi-quantum well films for colour conversion and optically-pumped visible lasers." Thesis, University of Strathclyde, 2015. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=25448.

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II-VI semiconductor material ZnCdMgSe has the potential to enable optical devices emitting throughout the visible spectrum. While difficulties in doping of this material have hindered its development for conventional electrically-injected semiconductor lasers, the recent availability of efficient, high power InGaN-based laser diodes has created the opportunity for optically-pumped devices, and this work primarily focusses on the progression towards realising vertical external-cavity surface-emitting lasers (VECSELs) based on this material system. Challenges in the growth of a ZnCdMgSe distributed Bragg reflector (DBR), such as low refractive index contrast and limited growth thickness for maintaining material quality, lead to the design of novel thin-film VECSEL structures, and the development of epitaxial transfer techniques to overcome the absorptive InP growth substrate and buffer. Transfer of thin-film (few microns thick) multi-quantum well heterostructures is demonstrated for samples with areas of a few mm², successfully transferring and liquid-capillary-bonding the films to diamond heat-spreaders for thermal management. Continued challenging growth, namely heterostructure layer inaccuracies, mean that laser threshold is not yet reached, however extensive characterisation and analysis is carried out to inform future progress in realising the ZnCdMgSe thin-film VECSEL. The thin-film VECSEL architecture offers advantages beyond allowing for the use of novel materials, opening the potential for novel laser cavities and optical pumping schemes. The thin-film transfer method developed for the II-VI VECSEL is adapted for the transfer of III-V AlGalnP epitaxial structures from GaAs growth substrates, and AlGalnP thin-film VECSELs are demonstrated operating continuous wave at red wavelengths at room temperature. Laser operation is currently limited by pump-induced de-bonding from the diamond, with attempts made to counter this through the refinement of structre design (including strain balancing) and transfer method. Until thermal rollover occurs, performance is relatively comparable with the 'conventional'; gain-mirror AlGaInP VECSELs, with a maximum output power of 21 mW recorded at both 682 nm and 670 nm for low output coupling. Using the transfer method developed for the II-VI material, ZnCdMgSe multi-quantum well structures are used as colour conversion films for micron-size LED arrays. The resulting hybrid devices are demonstrated to have high modulation bandwidths, limited only by the LED modulation bandwidth, suitable for application in visible-light communication.

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Marinelli, Claudio. "Techniques for improved-performance InGaN multi-quantum-well laser diodes." Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369525.

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Sindile, Pia. "Probing the dynamic behaviour of ridge waveguide multi-quantum well distributed feedback lasers, fundamental picosecond studies of chirp under large-signal modulation." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ63028.pdf.

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Weetman, Philip. "Modelling Quantum Well Lasers." Thesis, University of Waterloo, 2002. http://hdl.handle.net/10012/1262.

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In this thesis, two methods to model quantum well lasers will be examined. The first model is based on well-known techniques to determine some of the spectral and dynamical properties of the laser. For the spectral properties, an expression for TE and TM modal amplitude gain is derived. For the dynamical properties, the rate equations are shown. The spectral and dynamical properties can be examined separately for specific operating characteristics or used in conjunction with each other for a complete description of the laser. Examples will be shown to demonstrate some of the analysis and results that can be obtained. The second model used is based on Wigner functions and the quantum Boltzmann equation. It is derived from general non-equilibrium Greens functions with the application of the Kadanoff-Baym ansatz. This model is less phenomenological than the previous model and does not require the separation of physical processes such as the former spectral and dynamical properties. It therefore has improved predictive power for the performance of novel laser designs. To the Author's knowledge, this is the first time such a model has been formulated. The quantum Boltzmann equations will be derived and some calculations will be performed for a simplified system in order to illustrate some calculation techniques as well as results that can be obtained.

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Lyubomirsky, Ilya. "Toward far infrared quantum well lasers." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80484.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
Includes bibliographical references (p. 113-121).
by Ilya Lyubomirsky.
Ph.D.

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Griffin, Peter Stephen. "Multicontact, quantum well lasers for lightwave communication." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283927.

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Walker, Craig Lee. "Quantum well intermixing for high brightness semiconductor lasers." Thesis, University of Glasgow, 2002. http://theses.gla.ac.uk/4019/.

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The research presented in this thesis describes how monolithic opto-electronic integration using quantum well intermixing (QWI) can be applied to improve the high brightness performance of single-mode ridge waveguide GaAs/AlGaAs quantum well (QW) lasers. The sputtered SiO2 QWI technique is explained, and a selective process suitable for device manufacture was demonstrated. This QWI technology was applied to create three distinct devices to address the performance limitations imposed by catastrophic optical damage (COD), spatial mode instability, and overheating. A non absorbing mirror (NAM) laser technology was successfully demonstrated, capable of significantly improving the COD level of high power lasers prone to mirror degradation. Under pulsed test conditions designed to induce COD, the standard ridge laser suffered COD at 230 mW/facet, compared to 600 mW/facet for the NAM laser, demonstrating an improved COD level by a factor of 2.6. Confirmation of the COD failure mechanism was achieved by facet inspection, and removal of the damaged facets. Successful demonstration of a high brightness single lateral mode ridge laser with a self-aligned buried heterostructure defined by QWI was achieved. The device benefits from de-coupling of the optical and electrical confinement, allowing enhanced fundamental lateral mode operation up to higher powers; the buried heterostructure improves the lateral mode discrimination, thus suppressing higher order modes. Comparison of the standard ridge laser and the buried heterostructure ridge laser for ridge widths of 5 mm clearly demonstrated the improvement gained; the standard ridge laser was too wide to operate in the fundamental mode, whereas the buried heterostructure ridge laser showed dominantly single-mode operation up to 130 mW/facet.

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Fehse, Robin. "Recombination processes in GaInAs/GaAs semiconductor quantum-well lasers." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/677/.

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Books on the topic "Multi Quantum well lasers"

1

Sindile, Pia. Probing the dynamic behaviour of ridge waveguide multi-quantum well distributed feedback lasers: Fundamental picosecond studies of chirp-under large-signal modulation. Ottawa: National Library of Canada, 2001.

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2

Akhtar, Adnan Ibne. Well coupling effects in quantum well lasers. Ottawa: National Library of Canada, 1995.

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3

Physics of strained quantum well lasers. Boston: Kluwer Academic, 1998.

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Aversa, Claudio. Theoretical gain of quantum well lasers. Ottawa: National Library of Canada = Bibliothèque nationale du Canada, 1991.

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5

Loehr, John P. Physics of Strained Quantum Well Lasers. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5673-2.

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6

Pfeiffer, Michael. Industrial-strength simulation of quantum-well semiconductor lasers. Konstanz: Hartung-Gorre, 2004.

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7

Witzigmann, Bernd. Design and implementation of a three-dimensional edge emitting quantum well laser simulator / Bernd Witzigmann. Konstanz: Hartung-Gorre, 2000.

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8

1936-, Zory Peter S., ed. Quantum well lasers. Boston: Academic Press, 1993.

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9

Loehr, John P. Physics of Strained Quantum Well Lasers. Springer, 2014.

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10

W, Tomm Jens, and Jiménez J, eds. Quantum-well laser array packaging: Nanoscale packaging techniques. New York: McGraw-Hill, 2007.

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Book chapters on the topic "Multi Quantum well lasers"

1

Kop’ev, P. S., V. P. Kochereshko, I. N. Uraltsev, and D. R. Yakovlev. "Recombination Processes in GaAs/AlGaAs Multi-Quantum Well Structures." In Laser Optics of Condensed Matter, 87–93. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4615-7341-8_12.

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2

Arakawa, Yasuhiko. "Quantum Well Lasers." In Waveguide Optoelectronics, 123–41. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-1834-7_6.

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3

Agrawal, Govind P., and Niloy K. Dutta. "Quantum-Well Semiconductor Lasers." In Semiconductor Lasers, 426–71. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0481-4_9.

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Numai, Takahiro. "Quantum Well LDs." In Fundamentals of Semiconductor Lasers, 201–25. Tokyo: Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55148-5_7.

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Agrawal, Govind P., and Niloy K. Dutta. "Quantum-Well Semiconductor Lasers." In Long-Wavelength Semiconductor Lasers, 372–409. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-6994-3_9.

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6

Kapon, E., J. P. Harbison, R. Bhat, and D. M. Hwang. "Patterned Quantum Well Semiconductor Lasers." In NATO ASI Series, 49–59. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-7278-3_5.

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Loehr, John P. "Quantum-Mechanical Preliminaries." In Physics of Strained Quantum Well Lasers, 1–55. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5673-2_1.

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Loehr, John P. "Waveguiding in Semiconductor Lasers." In Physics of Strained Quantum Well Lasers, 163–86. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5673-2_4.

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9

Acket, G. A., P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, A. Valster, C. J. Poel, M. J. B. Boermans, and T. Dongen. "Strained Layer Quantum Well Semiconductor Lasers." In Semiconductor Interfaces at the Sub-Nanometer Scale, 241–49. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_25.

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Kinsler, P., and W. Th Wenckebach. "Towards quantum well hot hole lasers." In Springer Proceedings in Physics, 711–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_335.

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Conference papers on the topic "Multi Quantum well lasers"

1

Dutta, N. K., S. G. Napholtz, A. B. Piccirilli, and G. Przybylek. "InGaAsP distributed-feedback multi-quantum-well lasers." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/cleo.1986.tuq5.

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2

Jung, Daehwan, Lan Yu, Sukrith Dev, Daniel Wasserman, and Minjoo Larry Lee. "Mid-infrared quantum well lasers on multi-functional metamorphic buffers." In 2017 IEEE Photonics Conference (IPC). IEEE, 2017. http://dx.doi.org/10.1109/ipcon.2017.8116091.

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3

Li, Changyi, Jeremy B. Wright, Sheng Liu, Ping Lu, Jeffrey J. Figiel, Benjamin Leung, Ting Shan Luk, et al. "Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sm2f.2.

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4

Wilcox, J. Z., W. W. Simmons, G. P. Peterson, J. J. Yang, M. Jansen, and S. S. Ou. "Design Of Multi Quantum Well Lasers For Surface Emitting Arrays." In OE/LASE '89, 15-20 Jan., Los Angeles. CA, edited by Luis Figueroa. SPIE, 1989. http://dx.doi.org/10.1117/12.976371.

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Rahimi, Javad, Paolo Bardella, Lorenzo Luigi Columbo, and Mariangela Gioannini. "Comparison of multi-mode dynamics in single section quantum well and quantum dot lasers." In 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2017. http://dx.doi.org/10.1109/nusod.2017.8010080.

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Witzigmann, Bernd, and Mark S. Hybertsen. "Simulation of temperature-dependent modulation response in multi-quantum-well lasers." In Symposium on Integrated Optoelectronic Devices, edited by Peter Blood, Marek Osinski, and Yasuhiko Arakawa. SPIE, 2002. http://dx.doi.org/10.1117/12.470530.

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Chen, Yan, Luhong Mao, Weilian Guo, Shilin Zhang, Sheng Xie, Jinlong Yu, Xin Yu, Xianjie Li, Lifang Qi, and Xiao Gu. "Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers." In Photonics Asia 2010, edited by Ning-Hua Zhu, Jinmin Li, Farzin Amzajerdian, and Hiroyuki Suzuki. SPIE, 2010. http://dx.doi.org/10.1117/12.869789.

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Shoji Hirata, Hironobu Narui, and Yoshifumi Mori. "Submilliampere-threshold multi-quantum-well AlGaAs lasers their integration of more than 100 lasers." In Advanced processing and characterization technologies. AIP, 1991. http://dx.doi.org/10.1063/1.40643.

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Aleshkin, Vladimir Y., Vladimir L. Vaks, Dmitry B. Veksler, Vladimir I. Gavrilenko, Irina V. Erofeeva, Oleg A. Kuznetsov, and Mariya D. Moldavskaya. "Cyclotron resonance of two-dimensional holes in strained multi-quantum-well Ge/GeSi heterostructures." In Industrial Lasers and Inspection (EUROPTO Series), edited by J. Martyn Chamberlain. SPIE, 1999. http://dx.doi.org/10.1117/12.361056.

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Xiao, J. W., J. Y. Xu, J. M. Zhang, G. W. Yang, Z. T. Xu, and L. H. Chen. "Second-Harmonic Generation in Strained Layer InGaAs/GaAs Multi-Quantum-Well Lasers." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-i-13.

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Reports on the topic "Multi Quantum well lasers"

1

Greenwald, Anton. Ion Doped Quantum Well Lasers. Fort Belvoir, VA: Defense Technical Information Center, September 1995. http://dx.doi.org/10.21236/ada301963.

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Chaung, S. L. Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, September 1996. http://dx.doi.org/10.21236/ada319314.

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Chuang, S. L. High-Speed Strained Quantum-Well Lasers and Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, April 1999. http://dx.doi.org/10.21236/ada363544.

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Mikhailova, Maya P. III-V/II-VI Hybrid Quantum Well Mid-Infrared Lasers. Fort Belvoir, VA: Defense Technical Information Center, January 2005. http://dx.doi.org/10.21236/ada433199.

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Mawst, Luke J. Dilute-Nitride Type-II Quantum Well Lasers Grown by MOCVD. Fort Belvoir, VA: Defense Technical Information Center, February 2007. http://dx.doi.org/10.21236/ada470869.

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Razeghi, Manijeh. Growth and Fabrication of Multi-Quantum Well Infrared Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, May 2000. http://dx.doi.org/10.21236/ada413372.

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Lau, Kam Y. Ultrafast Dynamics of Quantum Well Lasers--Ultimate Potential for High Speed Modulation. Fort Belvoir, VA: Defense Technical Information Center, September 1992. http://dx.doi.org/10.21236/ada258653.

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Kudryashov, Igor. MWIR Lasers Using Type II Quantum Well Active Regions on InP Substrates. Fort Belvoir, VA: Defense Technical Information Center, March 2012. http://dx.doi.org/10.21236/ada582802.

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Hayduk, Michael J. Passively Mode-Locked Erbium-Doped Fiber Lasers Using Multiple Quantum Well Saturable Absorbers. Fort Belvoir, VA: Defense Technical Information Center, March 1998. http://dx.doi.org/10.21236/ada342029.

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Siskaninetz, William J., Hank D. Jackson, James E. Ehret, Jeffrey C. Wiemeri, and John P. Loehr. High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada398284.

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