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1

Wiegner, Dirk, Gerhard Luz, Patrick Jüschke, et al. "AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 95–104. http://dx.doi.org/10.1017/s175907871000022x.

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This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear pr
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2

Kalyan, Robin, Karun Rawat, and Shiban K. Koul. "Reconfigurable and Concurrent Dual-Band Doherty Power Amplifier for Multiband and Multistandard Applications." IEEE Transactions on Microwave Theory and Techniques 65, no. 1 (2017): 198–208. http://dx.doi.org/10.1109/tmtt.2016.2614930.

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3

Nghiem, Xuan Anh, Junqing Guan, Thomas Hone, and Renato Negra. "Design of Concurrent Multiband Doherty Power Amplifiers for Wireless Applications." IEEE Transactions on Microwave Theory and Techniques 61, no. 12 (2013): 4559–68. http://dx.doi.org/10.1109/tmtt.2013.2281959.

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4

Pang, Jingzhou, Zhijiang Dai, Yue Li, Meng Li, and Anding Zhu. "Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications." IEEE Transactions on Microwave Theory and Techniques 68, no. 6 (2020): 2382–97. http://dx.doi.org/10.1109/tmtt.2020.2971481.

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5

Kim, Bumman, Jangheon Kim, Ildu Kim, and Jeonghyeon Cha. "The Doherty power amplifier." IEEE Microwave Magazine 7, no. 5 (2006): 42–50. http://dx.doi.org/10.1109/mw-m.2006.247914.

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6

Qi, Xiaobo, and Fei Xiao. "Filtering Doherty power amplifier." IET Microwaves, Antennas & Propagation 14, no. 10 (2020): 1074–78. http://dx.doi.org/10.1049/iet-map.2019.0835.

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7

Osman Luhaib, Saad Wasmi. "Design of a Doherty Power Amplifier for GSM Systems." Tikrit Journal of Engineering Sciences 18, no. 3 (2011): 61–67. http://dx.doi.org/10.25130/tjes.18.3.07.

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This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency. The class AB power amplifier used in the configuration of the main and auxiliary amplifier. The result obtained shows that the Doherty power amplifier can be used on a wide band spectrum, the amplifier works at 900MHz and has very good power added efficiency (PAE) and gain. The amplifier can also work at 1800MHz at input power greater than 20dBm.
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8

Barmala, Ehsan. "Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (2019): 845. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp845-854.

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<span>In this paper, a Doherty power amplifier was designed and simulated at 2.4 GHz central frequency which has high efficiency. A Doherty power amplifier is a way to increase the efficiency in the power amplifiers. OMMIC ED02AH technology and PHEMT transistors, which is made of gallium arsenide, have been used in this simulation. The Doherty power amplifier unique feature is its simple structure which is consisting of two parallel power amplifiers and transmission lines. In order to integrate the circuit, the Doherty power transmission amplifier lines were implemented using an inductor
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9

Choi, Hojong. "A Doherty Power Amplifier for Ultrasound Instrumentation." Sensors 23, no. 5 (2023): 2406. http://dx.doi.org/10.3390/s23052406.

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The ultrasound instrumentation uses linear power amplifiers with low power efficiency, generating unwanted heat and resulting in the deterioration of the echo signal quality of measured targets. Therefore, this study aims to develop a power amplifier scheme to increase power efficiency while maintaining appropriate echo signal quality. In communication systems, the Doherty power amplifier has shown relatively good power efficiency while producing high signal distortion. The same design scheme cannot be directly applied to ultrasound instrumentation. Therefore, the Doherty power amplifier needs
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10

Shi, Weimin, and Songbai He. "Design of a Tri-Band Doherty Amplifier Based on Generalized Impedance Inverter." Journal of Circuits, Systems and Computers 28, no. 10 (2019): 1950170. http://dx.doi.org/10.1142/s0218126619501706.

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This paper introduces a methodology for implementing multi-band Doherty power amplifiers. Traditionally, a 90∘ impedance inverter line is required in Doherty architecture. In this contribution, a generalized impedance inverter line is utilized to construct multi-band Doherty power amplifiers. A tri-band Doherty power amplifier operating at 1.15, 1.85 and 2.55[Formula: see text]GHz is designed to validate the proposed method. Measurement results show the fabricated Doherty power amplifier achieves 6[Formula: see text]dB output back-off drain efficiencies of 62.3%, 49.3% and 50.5% at 1.15, 1.85
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11

Xi, Wang, Yu Shi, Shao Lin Yang, and Jun Li. "Doherty Power Amplifier with Dynamic Power Dividing Network for Enhanced Efficiency." Applied Mechanics and Materials 721 (December 2014): 560–63. http://dx.doi.org/10.4028/www.scientific.net/amm.721.560.

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In this paper, we present a high efficiency Doherty power amplifier (PA) employing dynamic power dividing network which automatically adjusts the input power division ratio in accordance with the level of input power to enhance efficiency. Doherty PA circuit parameters of each amplifier are determined by basic performance analysis according to the datasheet. Simulated circuits through Advanced Design System (ADS) exhibit an improvement of 4% at a 6 dB backoff point from its saturated output power (PSAT) than that of a conventional Doherty PA. Implemented Doherty PA using two Freescale MRF6S270
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12

Vorapipat, Voravit, Cooper S. Levy, and Peter M. Asbeck. "Voltage Mode Doherty Power Amplifier." IEEE Journal of Solid-State Circuits 52, no. 5 (2017): 1295–304. http://dx.doi.org/10.1109/jssc.2017.2647954.

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13

Bathich, Khaled, and Georg Boeck. "Design and analysis of 80-W wideband asymmetrical Doherty amplifier." International Journal of Microwave and Wireless Technologies 7, no. 1 (2014): 13–18. http://dx.doi.org/10.1017/s1759078714000452.

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This paper presents the analysis and design of a wideband asymmetrical Doherty amplifier. The frequency response of the output combining network of the Doherty amplifier with arbitrary back-off level configuration is analyzed. Other bandwidth-limiting factors were discussed and analyzed as well. A number of performance enhancement techniques were taken into consideration to obtain high and flat back-off efficiency over the amplifier design band of 1.7–2.25 GHz. The designed Doherty amplifier had, at 8.0–9.9 dB output back-off, a minimum efficiency of η = 50% [power-added efficiency of 45%], me
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14

Li, Renyi, Chen Ge, Chenwei Liang, and Shichang Zhong. "Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model." Micromachines 15, no. 3 (2024): 388. http://dx.doi.org/10.3390/mi15030388.

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This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm.
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15

Li, Guojin, and Yewen Wang. "Design of Broadband High-Efficiency DPA for 5G Micro Base Station." Journal of Physics: Conference Series 2517, no. 1 (2023): 012005. http://dx.doi.org/10.1088/1742-6596/2517/1/012005.

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Abstract To meet the requirements of the 5G communication system, the Doherty power amplifier has become a research hotspot because of its peak-to-average ratio and high backoff efficiency. At the same time, with the continuous development of mobile communication technology, the traditional Doherty power amplifier has gradually been difficult to meet the needs due to its structural problems. On the one hand, due to the limitation of the 1/4 wavelength transmission line in the traditional Doherty power amplifier, it is difficult to achieve broadband. This paper uses the post-matching technology
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16

Chun, S. H., D. H. Jang, J. Y. Kim, and J. H. Kim. "Inverted asymmetric Doherty power amplifier driven by two-stage symmetric Doherty amplifier." Electronics Letters 46, no. 17 (2010): 1208. http://dx.doi.org/10.1049/el.2010.1708.

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17

Chen, Jun, Hua Wei Yang, and Kai Xiong Su. "Simulation of Four-Stage Doherty Power Amplifier Structure." Applied Mechanics and Materials 278-280 (January 2013): 1095–98. http://dx.doi.org/10.4028/www.scientific.net/amm.278-280.1095.

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In order to improve the efficiency of Digital TV transmitter, we uses a new type of four-stage Doherty structure. Based on the transmission line theory and active loadpull theory, we deduce the principle of the four-stage Doherty structure, and use ADS to design a four-stage Doherty power amplifier. The simulation result shows that this four-stage Doherty PA has an efficiency of 34% at 6dB back-off (53dBm) for DVB-T OFDM 64 QAM modulated signal. The ACPR and MER obtained at 53dBm when output power are 31dBc and 28dB respectively.
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18

Parisi, Alessandro, Giuseppe Papotto, Claudio Nocera, Alessandro Castorina, and Giuseppe Palmisano. "A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications." Electronics 12, no. 17 (2023): 3639. http://dx.doi.org/10.3390/electronics12173639.

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This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power com
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19

Yoon, Hong-Sun, Min-Soo Park, Jong-Min Yook, Dongsu Kim, and Youngcheol Park. "Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier." Journal of Electromagnetic Engineering and Science 23, no. 4 (2023): 381–83. http://dx.doi.org/10.26866/jees.2023.4.l.15.

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This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon (Si) substrate. In order to achieve size and cost advantages, passive components such as a power divider, input matching networks, output matching networks, and a Doherty combiner are realized using Si-integrated passive device (Si-IPD) technology, which costs about 40% of the budget for the entire GaN MMIC process. For the 3.5 GHz pulsed-cont
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20

Santhanam, Suganthi, and Palavesam Selvan. "New Approach of Efficiency Improvement in 10 dB Doherty Power Amplifier for 4G LTE and 5G Wireless Applications." Applied Computational Electromagnetics Society 36, no. 4 (2021): 379–85. http://dx.doi.org/10.47037/2020.aces.j.360403.

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In this research article, the design procedure and comparative analysis of the 10 dB Doherty power amplifier (DPA) with single and double auxiliary amplifier for maximum efficiency has been presented. A new Doherty amplifier structure with parallel two auxiliary amplifiers based on conventional design having optimum value of load resistance of 3.162 ohm has been proposed with higher efficiency of 85.803% and analyzed with n-tone sinusoidal signal. The proposed Doherty power amplifier can achieve drain efficiency of 83.299% & with single and 85.803% with dual auxiliary amplifier at the outp
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21

Donati Guerrieri, Simona, Eva Catoggio, and Fabrizio Bonani. "Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling." Electronics 12, no. 9 (2023): 2101. http://dx.doi.org/10.3390/electronics12092101.

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The Doherty Power Amplifier represents one of the most promising solutions for the design of high-efficiency power stages. In the widely adopted ABC scheme, the Doherty Amplifier design critically depends on the accuracy of the device model in different operating conditions, ranging from class AB to class C. For the class C case, library models are often inaccurate, while experimental characterization is difficult since it must be carried out in large signal conditions and with varying gate bias. In this paper, we propose an alternative approach, based on physics-based Technological CAD (TCAD)
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22

Thian, Mury, and Peter Gardner. "Envelope-tracking-based Doherty power amplifier." International Journal of Electronics 97, no. 5 (2010): 525–30. http://dx.doi.org/10.1080/00207210903486831.

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23

Saurabh, Peddi, Poornima Asuti, and Prof Deepika P. "A Review of Efficiency Improvement Techniques in Modern Communication Systems." Journal of University of Shanghai for Science and Technology 23, no. 07 (2021): 656–58. http://dx.doi.org/10.51201/jusst/21/07196.

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This paper discusses Doherty Power Amplifier(DPA) and its evolution over the years. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are discussed.
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24

Li, Guojin, Wenyuan Xu, Jingchang Nan, and Mingming Gao. "Design of Efficient Concurrent Dual-Frequency Doherty Power Amplifier Based on Step Impedance Low-Pass Filter." Electronics 12, no. 19 (2023): 4092. http://dx.doi.org/10.3390/electronics12194092.

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In view of the peak-to-average power ratio (PAPR) of wireless communication base stations, a Doherty power amplifier with high efficiency maintained at output power back-off (OBO) can effectively solve the problem of low efficiency of the traditional power amplifier at the point of power back-off. In this paper, we propose a method to implement a dual-frequency Doherty power amplifier (DPA) using a step-impedance low-pass filter to improve the bandwidth and efficiency of the DPA at output power back-off (OBO). Step impedance low-pass filters are used to solve the bandwidth limitations in tradi
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25

Liu, Yang, and Huai Bao Xiao. "Design and Simulation of an Improved Doherty Power Amplifier." Applied Mechanics and Materials 496-500 (January 2014): 1109–12. http://dx.doi.org/10.4028/www.scientific.net/amm.496-500.1109.

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This work presents theory, design and simulation of an improved power amplifier based on the Doherty topology. It is theoretically shown that, by using multiple iterations of the source-pull and the load-pull in the platform of ADS with a Doherty power amplifier topology, the proposed amplifier can provide higher efficiency both at full output power and at back-off power, thus validating practical effects of the design and demonstrating a promising prospect of the design to be used in the future wireless transmitter applications.
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26

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,
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27

Chen, Jun, Guo Qing Shen, and Kai Xiong Su. "Application of New Matching Technique in Doherty Amplifier." Applied Mechanics and Materials 278-280 (January 2013): 1091–94. http://dx.doi.org/10.4028/www.scientific.net/amm.278-280.1091.

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According to the shortage of the traditional offset line in Doherty power amplifier, a new offset line technique is proposed to match carrier amplifier with the load and to improve the performance of the Doherty amplifier. By simulation of the computer software, a higher efficiency is obtained using the new offset line comparing the two kinds of offset lines. The new offset line matching technique could be applied in the system with high linearity and low power operation.
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28

Kim, Jangheon, Junghwan Son, Junghwan Moon, and Bumman Kim. "A Saturated Doherty Power Amplifier Based On Saturated Amplifier." IEEE Microwave and Wireless Components Letters 20, no. 2 (2010): 109–11. http://dx.doi.org/10.1109/lmwc.2009.2038554.

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29

Park, Yunsik, Juyeon Lee, Seokhyeon Kim, Donggyu Minn, and Bumman Kim. "Analysis of Average Power Tracking Doherty Power Amplifier." IEEE Microwave and Wireless Components Letters 25, no. 7 (2015): 481–83. http://dx.doi.org/10.1109/lmwc.2015.2429071.

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30

Kim, Ildu, Junghwan Moon, Jungjoon Kim, Seunghoon Jee, Junghwan Son, and Bumman Kim. "Highly efficient 3-stage Doherty power amplifier using gate bias adaption." International Journal of Microwave and Wireless Technologies 3, no. 1 (2010): 47–58. http://dx.doi.org/10.1017/s1759078710000711.

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This paper demonstrates a highly efficient 3-stage Doherty power amplifier (PA) employing an envelope tracking (ET) technique. The ‘3-stage’ Doherty PA is the most efficient architecture for a high peak-to-average power ratio (PAPR) signal among the various Doherty PAs. However, because of the lower peaking biases than those of the ‘N-way’ Doherty PA, the proper load modulation is hard to be achieved. To get proper modulation, the peaking PAs' gate biases have been adaptively controlled using the ET technique, and the peak power and maximum efficiency characteristic along the backed-off output
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31

Abdulkhaleq, Yahya, Al-Yasir, et al. "Doherty Power Amplifier for LTE-Advanced Systems." Technologies 7, no. 3 (2019): 60. http://dx.doi.org/10.3390/technologies7030060.

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The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3–3.5 GHz. Rogers RO4350B material is used as a substrate material, a back-off of 8 dB was achieved with an average gain of 10 dB. Load-pull data are an important tool for determining the optimum load impedance that the transistor needs to see. Additionally, the measured eff
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32

Nasri, Abbas, Motahhareh Estebsari, Siroos Toofan, et al. "Broadband Class-J GaN Doherty Power Amplifier." Electronics 11, no. 4 (2022): 552. http://dx.doi.org/10.3390/electronics11040552.

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This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output matching network, thus trading off among bandwidth, efficiency, and gain. The proposed amplifier adopts two 10 W packaged GaN transistors, and it achieves in measurement 60–74%, and 46–50% drain efficiency at saturation and 6 dB output back-off, respectively, with a saturated output power of 43–44.2 dBm and a small-signal gain of 10–13 dB. The proposed DP
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33

Moreno Rubio, Jorge Julián, Edison Ferney Angarita Malaver, and Luis Ángel Lara González. "Wideband Doherty Power Amplifier: A Design Approach." Micromachines 13, no. 4 (2022): 497. http://dx.doi.org/10.3390/mi13040497.

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This paper presents a simple method to design wideband Doherty power amplifiers (DPAs) based on the synthesis of a combiner network which can mimic the response of an ideal compensation of the device reactive output equivalent network and exploit the maximum power capabilities of the device. Using the Wolfspeed’s CGH40006 and CG2H40025 GaN HEMT devices, two DPAs were designed and simulated to demonstrate the effectiveness of the proposed approach. In both cases, a 1.4 GHz bandwidth was obtained together with an efficiency higher than 44 and 49% at 6 dB OBO. The saturated output power was highe
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Moreno Rubio, Jorge Julian, and Abdolhamid Noori. "Doherty Power Amplifier Design via Differential Combining." Electronics 13, no. 19 (2024): 3961. http://dx.doi.org/10.3390/electronics13193961.

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This paper introduces a novel differential combiner designed to effectively address parasitic capacitances of transistors used in power amplifier (PA) designs with precise compensation at a specified frequency. The combiner consists of a λ/4 transmission line with an integrated capacitor of value 2COUT at its midpoint, which ensures accurate cancellation of parasitic effects. This design connects the drain pins of two transistors, which are considered identical in this configuration. By eliminating the need for complex parasitic compensation techniques, this method significantly simplifies the
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35

Raab, Frederick. "Efficiency of Doherty RF Power-Amplifier Systems." IEEE Transactions on Broadcasting BC-33, no. 3 (1987): 77–83. http://dx.doi.org/10.1109/tbc.1987.266625.

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Lee, Mun-Woo, Sang-Ho Kam, Yong-Sub Lee, and Yoon-Ha Jeong. "Doherty power amplifier with cascaded peaking cells." Microwave and Optical Technology Letters 53, no. 1 (2010): 208–11. http://dx.doi.org/10.1002/mop.25682.

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Zhao, Shiwei, Longfei Zhou, Linsong Li, and Fei Zhao. "Design of Mode-reconfigurable Doherty Power Amplifier." Progress In Electromagnetics Research C 153 (2025): 271–79. https://doi.org/10.2528/pierc25021804.

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38

Ma, Chao. "Current State and Advanced Architectures of Doherty Power Amplifiers." Highlights in Science, Engineering and Technology 62 (July 27, 2023): 42–46. http://dx.doi.org/10.54097/hset.v62i.10422.

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Power amplifiers are critical components of wireless communication systems, providing the necessary power to transmit signals over long distances. Among various power amplifier solutions, the Dougherty power amplifier (DPA) remains a popular choice due to its high efficiency, speed, and power combination. However, conventional DPAs suffer from limited bandwidth and linearity, which have been major challenges in contemporary DPA design. This paper discusses the status, challenges, and potential solutions for improving the bandwidth and linearity of the DPAs. The limited bandwidth of conventiona
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39

Hu, Yushi, and Slim Boumaiza. "Doherty Power Amplifier Distortion Correction Using an RF Linearization Amplifier." IEEE Transactions on Microwave Theory and Techniques 66, no. 5 (2018): 2246–57. http://dx.doi.org/10.1109/tmtt.2018.2815562.

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40

Yan, Jonmei J., Paul Draxler, Calogero D. Presti, Donald F. Kimball, and Peter M. Asbeck. "Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications." International Journal of Microwave and Wireless Technologies 5, no. 2 (2013): 171–77. http://dx.doi.org/10.1017/s1759078713000147.

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In many base-station applications, the load/usage fluctuates over time periods of hours to days, thereby varying the required transmit power by as much as 10 dB. It is desirable to maintain high efficiency and linearity in the power amplifier under these back-off conditions in order to achieve high long-term efficiency. This paper demonstrates a scalable digital predistortion (DPD) approach that can be applied under different power back-off levels in envelope-tracking (ET) amplifiers and quantifies the associated efficiency. Efficiency comparisons are made with other amplifier configurations s
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41

Chen, Shichang, Weiwei Wang, Kuiwen Xu, and Gaofeng Wang. "A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension." Wireless Communications and Mobile Computing 2018 (2018): 1–10. http://dx.doi.org/10.1155/2018/8418165.

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This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same o
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42

Hewa Maddumage, Ishath Harshika, Gwanghyeon Jeong, Jusung Kim, and Dong-Ho Lee. "A Triple-Band Doherty Amplifier for Mobile Applications." Electronics 14, no. 11 (2025): 2167. https://doi.org/10.3390/electronics14112167.

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In this article, we present a triple-band Doherty power amplifier (DPA) with a Schiffman phase shifter, which achieved a 90-degree phase shift to facilitate broad frequency range operations. As the cornerstone of the triple-band DPA, the Schiffman phase shifter enabled simultaneous triple-band operations. Furthermore, the entire triple-band Doherty amplifier was designed and fabricated using GaN on SiC HEMT devices, confirming its practical applicability and robust performance. It achieved an output power of 34 dBm at the low-band (LB) frequency of 0.8 GHz, accompanied by a peak drain efficien
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43

Wang, Fang, Chi Li, Lili Qu, and Yufeng Peng. "Design of High-efficiency Continuous Class F Doherty Power Amplifier." Journal of Physics: Conference Series 2624, no. 1 (2023): 012018. http://dx.doi.org/10.1088/1742-6596/2624/1/012018.

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Abstract The high efficiency of the saturation state and rollback state is an important part of the front end of modern wireless communication systems. Improving the efficiency of RF power amplifiers is of great significance for energy saving and amplifier performance. Based on the traditional Doherty power amplifier, the harmonic suppression network is introduced before the fundamental frequency matching, so that the second harmonic impedance and third harmonic impedance can achieve continuous class F impedance matching conditions, and then the saturation efficiency and regression efficiency
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44

Fishler, Dan, Zoya Popovic, and Taylor Barton. "Supply Modulation Behavior of a Doherty Power Amplifier." IEEE Journal of Microwaves 1, no. 1 (2021): 508–12. http://dx.doi.org/10.1109/jmw.2020.3039421.

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Vorapipat, Voravit, Cooper S. Levy, and Peter M. Asbeck. "A Class-G Voltage-Mode Doherty Power Amplifier." IEEE Journal of Solid-State Circuits 52, no. 12 (2017): 3348–60. http://dx.doi.org/10.1109/jssc.2017.2748283.

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Liu, Hao-Yu, Xiao-Hu Fang, and Kwok-Keung M. Cheng. "Bandwidth Enhancement of Frequency Dispersive Doherty Power Amplifier." IEEE Microwave and Wireless Components Letters 30, no. 2 (2020): 185–88. http://dx.doi.org/10.1109/lmwc.2019.2963542.

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Kwon, Sungwook, Minsu Kim, Sungchan Jung, et al. "Inverted-load network for high-power Doherty amplifier." IEEE Microwave Magazine 10, no. 1 (2009): 93–98. http://dx.doi.org/10.1109/mmm.2008.930680.

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Lee, Juyeon, Junghwan Son, and Bumman Kim. "Optimised Doherty power amplifier with auxiliary peaking cell." Electronics Letters 50, no. 18 (2014): 1299–301. http://dx.doi.org/10.1049/el.2014.2214.

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Sun, Guolin, and Rolf H. Jansen. "Broadband Doherty Power Amplifier via Real Frequency Technique." IEEE Transactions on Microwave Theory and Techniques 60, no. 1 (2012): 99–111. http://dx.doi.org/10.1109/tmtt.2011.2175237.

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Golestaneh, Hamed, Foad Arfaei Malekzadeh, and Slim Boumaiza. "An Extended-Bandwidth Three-Way Doherty Power Amplifier." IEEE Transactions on Microwave Theory and Techniques 61, no. 9 (2013): 3318–28. http://dx.doi.org/10.1109/tmtt.2013.2275331.

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