Journal articles: 'Multiple thin film stack'

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Gupta, Vaibhav, John A. Sellers, Charles D. Ellis, Simin Zou, George A. Hernandez, Rujun Bai, Yang Cao, David B. Tuckerman, and Michael C. Hamilton. "Preserving Nb Superconducvity in Thin Film Flexible Structures." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, DPC (January 1, 2016): 002075–94. http://dx.doi.org/10.4071/2016dpc-tha32.

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Similar to observations from other groups, we have observed degradation of the superconducting properties of Nb thin films that have been subjected to subsequent high temperature fabrication processes, such as curing of a passivating polyimide layer at 350°C. This degradation may be caused by interaction with material that diffuses into the Nb during the subsequent processes, and is the subject of ongoing research. To counteract these degradation effects, we have explored multiple materials as barrier layers to attempt to isolate and protect the Nb. The effectiveness of the barrier layer depends on the use of an appropriate layer stack that minimizes degradation in the superconducting thin film, is compatible with subsequent fabrication steps, and is stable and repeatable. We have investigated multiple material stack-ups to protect Nb-based superconducting thin film in flexible structures. We show that curing polymers above a certain temperature on top of a Nb layer can adversely affect the superconducting properties including critical transition temperature (Tc) and critical current (Ic). DC electrical characterization of patterned film test structures were carried out using a closed-cycle cryostat to determine Tc and Ic for the samples. Details of the fabrication processes, experimental procedures and performance results will be presented. Results of these experiments are expected to provide insight into possible materials stack-ups for packaging and interconnect structures for future cryogenic electronics systems.

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Kuo, Yue, and Chi-Chou Lin. "Polycrystalline Silicon Thin Film Formed By Multiple Pulsed Rapid Thermal Annealing – Intrinsic a-Si Film Thickness Effect." MRS Proceedings 1426 (2012): 269–74. http://dx.doi.org/10.1557/opl.2012.836.

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ABSTRACTThe polycrystalline n+/intrinsic silicon thin film stacks with various original intrinsic amorphous silicon layer thicknesses were formed using the multiple pulsed rapid thermal annealing process with the Ni-induced crystallization mechanism. The thick polycrystalline silicon stack was prepared by repeated steps of 1) amorphous silicon thin film deposition, 2) solution oxidation, 3) dehydrogenation, 4) pulsed rapid thermal annealing, and 5) oxide stripping. The poly-Si film properties, such as the grain size, orientation, and volume fraction of the crystalline phase, were related to the original intrinsic silicon film thickness and the total thermal budget. This process is effective in preparing the high volume fraction polycrystalline silicon thin film, which is important for low-cost thin-film solar cells, electronic and optoelectronic devices.

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Puttichaem, Chanida, Guilherme P. Souza, Kurt C. Ruthe, and Kittipong Chainok. "Characterization of Ultra-Thin Diamond-Like Carbon Films by SEM/EDX." Coatings 11, no. 6 (June 17, 2021): 729. http://dx.doi.org/10.3390/coatings11060729.

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A novel, high throughput method to characterize the chemistry of ultra-thin diamond-like carbon films is discussed. The method uses surface sensitive SEM/EDX to provide substrate-specific, semi-quantitative silicon nitride/DLC stack composition of protective films extensively used in the hard disk drives industry and at Angstrom-level. SEM/EDX output is correlated to TEM to provide direct, gauge-capable film thickness information using multiple regression models that make predictions based on film constituents. The best model uses the N/Si ratio in the films, instead of separate Si and N contributions. Topography of substrate/film after undergoing wear is correlatively and compositionally described based on chemical changes detected via the SEM/EDX method without the need for tedious cross-sectional workflows. Wear track regions of the substrate have a film depleted of carbon, as well as Si and N in the most severe cases, also revealing iron oxide formation. Analysis of film composition variations around industry-level thicknesses reveals a complex interplay between oxygen, silicon and nitrogen, which has been reflected mathematically in the regression models, as well as used to provide valuable insights into the as-deposited physics of the film.

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Kamau, Steve, Safaa Hassan, Khadijah Alnasser, Hualiang Zhang, Jingbiao Cui, and Yuankun Lin. "Broadband Absorption in Patterned Metal/Weakly-Absorbing-Spacer/Metal with Graded Photonic Super-Crystal." Photonics 8, no. 4 (April 8, 2021): 114. http://dx.doi.org/10.3390/photonics8040114.

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It is challenging to realize the complete broadband absorption of near-infrared in thin optical devices. In this paper, we studied high light absorption in two devices: a stack of Au-pattern/insulator/Au-film and a stack of Au-pattern/weakly-absorbing-material/Au-film where the Au-pattern was structured in graded photonic super-crystal. We observed multiple-band absorption, including one near 1500 nm, in a stack of Au-pattern/spacer/Au-film. The multiple-band absorption is due to the gap surface plasmon polariton when the spacer thickness is less than 30 nm. Broadband absorption appears in the near-infrared when the insulator spacer is replaced by a weakly absorbing material. E-field intensity was simulated and confirmed the formation of gap surface plasmon polaritons and their coupling with Fabry–Pérot resonance.

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Bu, Ling, Weiyu Xu, Shengjiang Quan, Hongfei Li, Bingji Xu, and Lei Song. "Improvement of charge storage characteristics of silicon based polyvinylidene fluoride thin film through heat treatment and multiple layer stack." Journal of Electrostatics 81 (June 2016): 9–14. http://dx.doi.org/10.1016/j.elstat.2016.02.006.

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Yadav, Nitish, Kamal Prakash Pandey, and Pramod Narayan Tripathi. "Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications." Journal of Advanced Dielectrics 08, no. 05 (October 2018): 1850037. http://dx.doi.org/10.1142/s2010135x18500376.

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Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known. This paper reports the optimization and fabrication of ferroelectric/dielectric (BiFeO3/HfO[Formula: see text] gate stack for the FeFET applications. RF magnetron sputtering has been used for the deposition of BiFeO3, HfO2 films and their stack. X-Ray diffraction (XRD) analysis of BiFeO3 shows the dominant perovskite phase of (104), (110) orientation at 2[Formula: see text] at the annealing temperature of 500[Formula: see text]C. XRD analysis also confirms the amorphous nature of the HfO2 film at annealing temperature of 400[Formula: see text]C, 500[Formula: see text]C and 600[Formula: see text]C. Multiple angle analysis shows the variation ion the refractive index between 2.98–3.0214 for BiFeO3 and 2.74–2.9 for the HfO2 film with the annealing temperature. Metal/Ferroelectric/Silicon (MFS), Metal/Ferroelectric/Metal (MFM), Metal/Insulator/Silicon (MIS), and Metal/Ferroelectric/Insulator/Silicon (MFIS) structures have been fabricated to obtain the electric characteristic of the ferroelectric, dielectric and their stacks. Electrical characteristics of the MFIS structure show the memory improvement from 2.7[Formula: see text]V for MFS structure to 4.65[Formula: see text]V for MFIS structure with 8[Formula: see text]nm of buffer dielectric layer. This structure also shows the breakdown voltage of 40[Formula: see text]V with data retention capacity greater than [Formula: see text] iteration cycles.

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Lu, Hsueh-Tsung, Yutao Qin, and Yogesh Gianchandani. "A Microvalve Module with High Chemical Inertness and Embedded Flow Heating for Microscale Gas Chromatography." Sensors 21, no. 2 (January 18, 2021): 632. http://dx.doi.org/10.3390/s21020632.

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This paper reports a multi-valve module with high chemical inertness and embedded flow heating for microscale gas chromatography (µGC) systems. The multi-valve module incorporates a monolithically microfabricated die stack, polyimide valve membranes, and solenoid actuators. The design incorporates three valves within a single module of volume 30.2 cm3, which is suitable for the small form factor of µGC systems. The die stack uses fused silica wafers and polyimide valve membranes that enhance chemical inertness. The monolithic die stack requires only three lithographic masks to pattern fluidic microchannels, valve seats, and thin-film metal heaters and thermistors. The performance of fabricated multi-valve modules is compared to a commercial valve in tests using multiple volatile organic compounds, including alkanes, alcohols, ketones, aromatic hydrocarbons, and phosphonates. The valves show almost no distortion of chromatographic peaks. The experimentally measured ratio of flow conductance is 3.46 × 103, with 4.15 sccm/kPa in the open state and 0.0012 sccm/kPa in the closed state. The response time is <120 ms.

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Varvaro, G., S. Laureti, D. Peddis, M. Hassan, G. Barucca, P. Mengucci, A. Gerardino, et al. "Co/Pd-Based synthetic antiferromagnetic thin films on Au/resist underlayers: towards biomedical applications." Nanoscale 11, no. 45 (2019): 21891–99. http://dx.doi.org/10.1039/c9nr06866j.

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Thin film stacks made of multiple repeats of Co/Pd-based SAF units with perpendicular magnetic anisotropy and tunable magnetic moment were explored as starting material to fabricate free-standing micro/nanodisks for theranostic applications.

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Jewel, Mohi Uddin, Mahmuda Akter Monne, Bhagyashree Mishra, and Maggie Yihong Chen. "Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors." Molecules 25, no. 5 (February 28, 2020): 1081. http://dx.doi.org/10.3390/molecules25051081.

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Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS2) by multiple printing passes to construct a MoS2–NDG stack. We demonstrate top-gated fully inkjet-printed MoS2–NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO3) dielectric. A 100% inkjet-printed MoS2–NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches.

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Jerng, Sahng-Kyoon, Jae Ho Jeon, Youngwook Kim, Jun Sung Kim, and Seung-Hyun Chun. "Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks." Current Applied Physics 19, no. 3 (March 2019): 219–23. http://dx.doi.org/10.1016/j.cap.2018.07.020.

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ZAZZA, COSTANTINO, SIMONE MELONI, and AMEDEO PALMA. "STRUCTURAL AND ELECTRONIC PROPERTIES OF METAL-DOPED ORGANIC SEMICONDUCTORS." Modern Physics Letters B 22, no. 17 (July 10, 2008): 1609–31. http://dx.doi.org/10.1142/s0217984908016388.

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Interaction of metal atoms with organic thin films is a fundamental issue in the optimization performances of novel devices. The computational investigations, based on density functional theory, reveal that a realistic description of the reactive processes is obtained when the organic thin film is modeled by its crystallographic structure. In this case, the metal atoms can react with multiple organic molecules present in the solid forming complexes where they are bound both to O atoms and to aromatic C atoms of the molecules. Calculated band gap states, induced by chemical reaction upon deposition, reproduce quite well the measured density of states as a function of the metal concentration in the solid. Simulated core level shift spectra for N (1s), O (1s) and Al (2p) in doped systems are in good agreement with experimental spectra and the electronic structure analysis provides a microscopic description of reaction processes. Interestingly, K atoms in PTCDA solid are ionically bound to anhydride O atoms and are able to form quasi mono-dimensional chain along the stack direction of the organic material.

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Mazzola, Michael S., Swapna G. Sunkari, Janice Mazzola, Hrishikesh Das, Galyna Melnychuck, Yaroslav Koshka, Jeffery L. Wyatt, and Jie Zhang. "Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy." Materials Science Forum 483-485 (May 2005): 397–400. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.397.

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Room temperature Fourier Transform Infrared Reflection Spectroscopy (FTIR) was used to investigate the thickness and Free Carrier Concentration (FCC) of heavily and lightly doped 4H and 6H-SiC epitaxial films. Multiple epitaxial layer stacks typical of lateral devices such as the MESFET were grown on 6H-SiC semi-insulating substrates. The estimation of thickness and FCC of the n-channel epi layer is improved by studying the Longitudinal Optical Phonon Plasmon Coupled Modes (LPP). A modelbased analysis of the experimental reflectance spectra from these samples is performed using a dielectric function that accounts for the phonon-photon coupling and plasmonphoton coupling. The value of the LPP+ mode frequency estimated from the reflectance spectrum in the range 600-1200 cm-1 is observed to increase in direct correlation with the electron free-carrier concentration.

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Chang, Ya-Chen, Teh-Li Chan, Cheng-Chung Lee, Yi-Jun Jen, and Wei-Chieh Ma. "Design of a Hyperbolic Metamaterial as a Waveguide for Low-Loss Propagation of Plasmonic Wave." Symmetry 13, no. 2 (February 9, 2021): 291. http://dx.doi.org/10.3390/sym13020291.

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A stratiform hyperbolic metamaterial comprises multiple units of symmetrical metal-dielectric film, stacked to have a precisely equivalent refractive index, admittance, and iso-frequency curve. A metamaterial that is composed of stacks of symmetrical films as a waveguide to couple a diffracted wave into a horizontally propagating plasmonic wave is designed herein. By tuning the parameters of the constituent thin films within a hyperbolic metamaterial, both the loss of the plasmonic wave and admittance matching are minimized and optimized, respectively.

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Dziurdzia, Barbara, Zbigniew Magonski, and Henryk Jankowski. "Stack of solid oxide fuel cells." Microelectronics International 31, no. 3 (August 4, 2014): 207–11. http://dx.doi.org/10.1108/mi-12-2013-0081.

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Purpose – The paper aims to present the innovative design of a planar multilayered high temperature solid oxide fuel cell (SOFC), which is easy to manufacture, and features high resistance to rapid temperature changes. Temperature resistance was accomplished thanks to easy to heat, thin flat ceramic structure of the cell and elimination of metallic interconnections. Design/methodology/approach – The ceramic fuel cell consists of the anode core made of six to eight layers of nickel/yttria-stabilized zirconia tapes (Ni/YSZ) isostatically pressed into a laminate. Two networks of fuel distribution microchannels are engraved on both sides of the anode laminate. The microchannels are subsequently covered with a thin layer of the functional anode tape made of Ni/YSZ and a solid electrolyte tape made of YSZ. Findings – The single planar double-sided ceramic SOFC of dimensions 19 × 60 × 1.2 mm3 provides 3.2 Watts of electric power. The prototype of the battery which consists of four SOFCs provides an output power of > 12 W. Tests show that the stack is resistant to the rapid temperature change. If inserted into a chamber preheated to 800°C, the stack provides the full power within 5 minutes. Multiple cycling does not destroy the stack. Originality/value – This anode-supported fuel cell structure is provided with thin anode functional layers suspended on a large number of fine beams. The whole anode structure is made with the same ceramic material, so the mechanical stress is minimized during the cell operation.

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Sikdar, Debabrata, and Alexei A. Kornyshev. "An electro-tunable Fabry–Perot interferometer based on dual mirror-on-mirror nanoplasmonic metamaterials." Nanophotonics 8, no. 12 (November 8, 2019): 2279–90. http://dx.doi.org/10.1515/nanoph-2019-0317.

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AbstractMirror-on-mirror nanoplasmonic metamaterials, formed on the basis of voltage-controlled reversible self-assembly of sub-wavelength-sized metallic nanoparticles (NPs) on thin metallic film electrodes, are promising candidates for novel electro-tunable optical devices. Here, we present a new design of electro-tunable Fabry–Perot interferometers (FPIs) in which two parallel mirrors – each composed of a monolayer of NPs self-assembled on a thin metallic electrode – form an optical cavity, which is filled with an aqueous solution. The reflectivity of the cavity mirrors can be electrically adjusted, simultaneously or separately, via a small variation of the electrode potentials, which would alter the inter-NP separation in the monolayers. To investigate optical transmittance from the proposed FPI device, we develop a nine-layer-stack theoretical model, based on our effective medium theory and multi-layer Fresnel reflection scheme, which produces excellent match when verified against full-wave simulations. We show that strong plasmonic coupling among silver NPs forming a monolayer on a thin silver-film substrate makes reflectivity of each cavity mirror highly sensitive to the inter-NP separation. Such a design allows the continuous tuning of the multiple narrow and intense transmission peaks emerging from an FPI cavity via electro-tuning the inter-NP separation in situ – reaping the benefits from both inexpensive bottom-up fabrication and energy-efficient tuning.

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Kim, MaengJun, SungHo Lee, and SangHo Sohn. "Reaction pathways for copper indium diselenide thin film formation from single and multiple InSe/CuSe bilayer stacks." Thin Solid Films 531 (March 2013): 125–30. http://dx.doi.org/10.1016/j.tsf.2013.01.001.

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Singh, Prashant, Rajesh Kumar Jha, Manish Goswami, and B. R. Singh. "Integration of perovskite Pb[Zr0.35Ti0.65]O3/HfO2 ferroelectric-dielectric composite film on Si substrate." Microelectronics International 37, no. 3 (June 4, 2020): 155–62. http://dx.doi.org/10.1108/mi-11-2019-0069.

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Purpose The purpose of this paper is to investigate the effect of high-k material HfO2 as a buffer layer for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si (100) substrate. Design/methodology/approach RF-sputtered Pb[Zr0.35Ti0.65]O3 or (PZT) and plasma-enhanced atomic layer deposited HfO2 films were selected as the ferroelectric and high-k buffer layer, respectively, for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si (100) substrate. Multiple angle ellipsometry and X-ray diffraction analysis was carried out to obtain the crystal orientation, refractive index and absorption coefficient parameters of the deposited/annealed films. In the different range of annealing temperature, the refractive index was observed in the range of 2.9 to 2 and 1.86 to 2.64 for the PZT and HfO2 films, respectively Findings Electrical and ferroelectric properties of the dielectric and ferroelectric films and their stacks were obtained by fabricating the metal/ferroelectric/silicon (MFeS), metal/ferroelectric/metal, metal/insulator/silicon and MFeIS capacitor structures. A closed hysteresis loop with remnant polarization of 4.6 µC/cm2 and coercive voltage of 2.1 V was observed in the PZT film annealed at 5000 C. Introduction of HfO2 buffer layer (10 nm) improves the memory window from 5.12 V in MFeS to 6.4 V in MFeIS structure with one order reduction in the leakage current density. The same MFeS device was found having excellent fatigue resistance property for greater than 1010 read/write cycles and data retention time more than 3 h. Originality/value The MFeIS structure has been fabricated with constant PZT thickness and varied buffer layer (HfO2) thickness. Electrical characteristics shows the improved leakage current and memory window in the MFeIS structures as compared to the MFeS structures. Optimized MFeIS structure with 10-nm buffer layer shows the excellent ferroelectric properties with endurance greater than E10 read/write cycles and data retention time higher than 3 h. The above properties indicate the MFe(100 nm)I(10 nm)S gate stack as a potential candidate for the FeFET-based nonvolatile memory applications.

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Zheng, Chang Da, Chun Lan Mo, Wen Qing Fang, and Feng Yi Jiang. "Effect of the Conduction Type of Si (111) Substrates on the Performance of GaN MQW LED Epitaxial Films." Advanced Materials Research 750-752 (August 2013): 1029–33. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1029.

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The present paper prepared a structural epitaxial film of gallium nitride multiple-quantum-well (GaN MQW) blue light-emitting diode (LED) on Si (111) substrates with different conduction types using the metal-organic chemical vapor deposition method. The method prevented the interdiffusion of GaN and Si to achieve high-quality film growth by introducing aluminium nitride (AlN)-interposed layer and rich-Gallium GaN layer with low V/III ratio double buffer layers. Surface analysis shows that the GaN LED epitaxial film on the Si (111) substrate with different conduction types presented an entirely different appearance. The surface roughness of all the samples was less than 3 nm. A much smoother surface of the epitaxial film on the N-type substrate had less roughness, whereas a layered stack surface of the epitaxial film on the P-type substrate had larger surface roughness. The full width at half maximum of the XRD Omega rocking curve with (002) and (102) planes of GaN film grown on the N-type substrate was less than that of the GaN film on the P-type substrate. Furthermore, the film was superior to the samples on the P-type substrate in terms of crystal quality. There was little difference in the peak position of the PL of the epitaxial film on the N-type substrate, but the peak position of the PL of the epitaxial film on the P-type substrate was long and had a large half-peak width. The tensile stress of the GaN film on the P-type substrate was higher. The above results show that the N-type Si (111) substrate with high resistivity is more suitable for the growth of GaN MQW LED epitaxial film.

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Singh, Prashant, Rajesh Kumar Jha, Rajat Kumar Singh, and B. R. Singh. "Electrical properties of Pb[Zr0.35Ti0.65]O3 on PEALD Al2O3 for NVM applications." Microelectronics International 35, no. 4 (October 1, 2018): 189–96. http://dx.doi.org/10.1108/mi-06-2017-0029.

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Purpose Development of (1T-type) ferroelectric random access memory (FeRAM) has most actively progressed since 1995 and motivated by the physical limits and technological drawbacks of the flash memory. 1T-type FeRAM implements ferroelectric layer at the field effect transistor (FET) gate. During the course of the investigation, it was very difficult to form a thermodynamically stable ferroelectric-semiconductor interface at the FET gate, leading to the introduction of one insulating buffer layer between the ferroelectric and the silicon substrate to overcome this problem. In this study, Al2O3 a high-k buffer layer deposited by plasma enhanced atomic layer deposition (PEALD) is sandwiched between the ferroelectric layer and silicon substrate. Design/methodology/approach Ferroelectric/high-k gate stack were fabricated on the silicon substrate and pt electrode. Structural characteristics of the ferroelectric (PZT) and high-k (Al2O3) thin film deposited by RF sputtering and PEALD, respectively, were optimized and investigated for different process parameters. Metal/PZT/Metal, Metal/PZT/Silicon, Metal/PZT/Al2O3/Silicon structures were fabricated and electrically characterized to obtain the memory window, leakage current, hysteresis, PUND, endurance and breakdown characteristics. Findings XRD pattern shows the ferroelectric perovskite thin Pb[Zr0.35Ti0.65]O3 film with (101) tetragonal orientation deposited by sputtering and PEALD Al2O3 with (312) orientation showing amorphous nature. Multiple angle analysis shows that the refractive index of PZT varies from 2.248 to 2.569, and PEALD Al2O3 varies from 1.6560 to 1.6957 with post-deposition annealing temperature. Increase in memory window from 2.3 to 8.4 V for the Metal-Ferroelectric-Silicon (MFS) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure has been observed at the annealing temperature of 500°C. MFIS structure with 10 nm buffer layer shows excellent endurance of 3 × 109 read-write cycles and the breakdown voltage of 33 V. Originality/value This paper shows the feature, principle and improvement in the electrical properties of the fabricated gate stack for 1T-type nonvolatile FeFET. The insulating buffer layer sandwiched between ferroelectric and silicon substrate acts as a barrier to ferroelectric–silicon interdiffusion improves the leakage current, memory window, endurance and breakdown voltage. This is perhaps the first time that the combination of sputtered PZT on the PEALD Al2O3 layer is being reported.

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Mitra, Kalyan Yoti, Enrico Sowade, Christoph Sternkiker, Carme Martínez-Domingo, Eloi Ramon, Jordi Carrabina, and Reinhard R. Baumann. "Investigation on Electrical Stress over Metal-Insulator-Metal (MIM) Structures Based on Compound Dielectrics for the Inkjet-Printed OTFT Stability." Applied Mechanics and Materials 748 (April 2015): 129–33. http://dx.doi.org/10.4028/www.scientific.net/amm.748.129.

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One of the greatest challenges in the field of printed electronics is the performance stability of the devices fabricated by the different printing technologies e.g. inkjet or gravure printing technology. The performance instability can be defined in terms of the device breakdown or by other effects like the emergence of leakage current under the constant high voltage inputs (especially the dielectric within the transistor architecture). The reasons behind this phenomenon can be various, but the most prominent indication can be detected from the materials used and the deposition methodology. For this purpose the herein work is presented, targeting on the all inkjet-printed organic thin film transistor (OTFT), but keeping the focus on the basic building block for fabricating inkjet-printed OTFTs. In this case it is the metal-insulator-metal (MIM) layer structure. Herein, the MIM structures are inkjet-printed, and then characterized optically and electrically. The dielectric layers for the MIM structures are printed using three different dielectric ink materials either individually 1) Single component system; or in combination with each other as in form of bi-layer stack 2) Multiple component system. The thickness of the printed dielectric layers is varied for these MIM structures. The electrical characterization is performed with respect to current vs. applied voltage and is done for a large number of iterations. The leakage current is of interest and shows a negative and positive trend towards the single component system and multiple component system for the dielectric layers in the MIM characterization structures respectively.

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Tong, Q.-Y., and R. W. Bower. "Beyond “Smart-Cut®” Recent Advances in Layer Transfer for Material Integration." MRS Bulletin 23, no. 12 (December 1998): 40–44. http://dx.doi.org/10.1557/s0883769400029821.

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An integrated substrate, consisting of more than one material or material structure, is highly desirable for optimizing performance of multiple-device types on a single chip or for growing high-quality heteroepitaxial films on compliant substrates. A typical integrated substrate contains a stack of thin layers of similar or dissimilar materials that are either amorphous, or poly- or single-crystalline with a variety of lattice constants or crystallographic orientations. Partially or fully processed device layers can also be transferred onto a desired substrate where the transferred device layer can be further processed on the opposite side of its original surface. In this article, we focus on issues related to layer transfer for material integration.Layer transfer from a hydrogen (H)-implanted wafer onto a desired substrate by wafer bonding and layer splitting (the so-called “Smart-Cut®” method) is an attractive approach to prepare integrated materials, such as-silicon-on-insulator (SOI), SiC or GaAs on oxidized silicon, and Ge on glass.

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Bakurskiy, Sergey, Mikhail Kupriyanov, Nikolay V. Klenov, Igor Soloviev, Andrey Schegolev, Roman Morari, Yury Khaydukov, and Anatoli S. Sidorenko. "Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport." Beilstein Journal of Nanotechnology 11 (September 7, 2020): 1336–45. http://dx.doi.org/10.3762/bjnano.11.118.

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We present both theoretical and experimental investigations of the proximity effect in a stack-like superconductor/ferromagnetic (S/F) superlattice, where ferromagnetic layers with different thicknesses and coercive fields are made of Co. Calculations based on the Usadel equations allow us to find the conditions at which switching from the parallel to the antiparallel alignment of the neighboring F-layers leads to a significant change of the superconducting order parameter in superconductive thin films. We experimentally study the transport properties of a lithographically patterned Nb/Co multilayer. We observe that the resistive transition of the multilayer structure has multiple steps, which we attribute to the transition of individual superconductive layers with the critical temperature, T c, depending on the local magnetization orientation of the neighboring F-layers. We argue that such superlattices can be used as tunable kinetic inductors designed for artificial neural networks representing the information in a “current domain”.

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Mehendale, M., R. Mair, J. Chen, J. Tan, J. Dai, P. Mukundhan, C. Kim, and T. Kryman. "Enhancements to Picosecond Acoustic Metrology for application in FO-WLP Process." International Symposium on Microelectronics 2018, no. 1 (October 1, 2018): 000212–16. http://dx.doi.org/10.4071/2380-4505-2018.1.000212.

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Abstract Fan out wafer level packaging (FO-WLP) is one of the fastest growing advanced packaging segments due to its versatility for a wide variety of applications. It's compatibility with large scale, low cost, ultra-thin and high-density packages has made it very attractive. Cu redistribution layer and multiple metal under bump metallization stack play critical role in the FO-WLP process especially with shrinking line/space size and increasing density. We previously discussed the adaptation of PULSE™ technology, with the integration of a visible reflectometer and high resolution camera as a comprehensive in-line metrology tool for the advanced packaging applications. In this paper, we present results from some recent work on enhancements to the configuration for measurements of very thick, rough RDL films. The modifications provided significant improvement (9×) to throughput while maintaining gage capable repeatability. Cross-section SEM measurements on 1μm RDL structures were used to validate the extendibility of the technique.

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Shen, Zhenzhen, and Aleksey Reiderman. "High-Temperature Reliability of Wire Bonds on Thick Film." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000531–35. http://dx.doi.org/10.4071/isom-2017-tha23_086.

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Abstract In a harsh environment, wire-bonded interconnects are critical for overall reliability of microelectronic assemblies. Aluminum is the dominating metallization of the die wire bonding pads and aluminum wires are used to achieve monometallic bonding system on die side. On the substrate side, a monometallic connection is not readily available and typically involves expensive aluminum thin-film deposition or labor-intensive bonding tabs. Nickel-palladium-gold galvanic or electro-less plating stacks are also used to improve bondability and reliability of non-monometallic Al wire bonds on the substrate side. However, these plating stacks do not perform well after excursions above 330°C that are needed for the attachment of die and passives prior to wire bonding. At these temperatures, both palladium and nickel diffuse through the gold and form surface oxides that degrade wire bondability. In monometallic wire-bonding schemes, in addition to aluminum wires gold wires within same assembly are often also needed, for example, when some die is only available with gold-plated bond pads, or to connect substrates to gold-plated pins of hybrid housings. A universal substrate metallization, compatible with aluminum wire and gold wire, is therefore desirable. Thin-film substrates produced by sequential deposition and etching of gold metal, barrier metals, then aluminum metal is a good working solution, but it can be as much as ten times more expensive than other types of substrates. Printed thick-film metallization, a well-established technology, have been widely used for hybrid substrates. Silver-based thick films are inexpensive and capable of accepting aluminum and gold bonds. However, the silver-aluminum bonds are seldom used because of intermetallic formation and subsequent degradation triggered by multiple factors like temperature, humidity, and the presence of halogens. Pd and Pt are often added to the Ag thick films to decrease this effect, but potential usability and the reliability of these formulations in extreme temperature environments is not well researched. For this study, samples of Pt/Ag thick-film metallization were printed on Al2O3 substrates, and 25-um and 250-um aluminum wires and 50-um gold wires were wedge bonded in daisy chain to the substrate. The test vehicles were subjected to high-temperature testing at 260°C and 280°C. Thermal cycling tests from −20°C to 280°C were also performed. Mechanical and electrical characterizations of the wire bonds were conducted periodically. These tests included resistance and pull-strength measurements. Failure analysis of the bond joints was performed to understand the results of the tests. The 250-um Al wire and 25-um Al wire showed no significant changes until a critical time-at-temperature was reached. After reaching this temperature, the wire/substrate interface resistance rapidly increased to values as high as 40 Ohms for the 25-um Al wires. However, the pull strength remained within standard throughout the tests of up to 1200 hours. The relationship between time to failure and the temperature is presented in the paper. There was a four times life increase of bonds with every 20°C. With gold wires, no dramatic increase of bond resistance was observed, only a slight increase with time. The pull strength of Au wires remained stable throughout the time at high temperature. The tested Ag/Pt thick film metallization was found to be compatible with bonding of the gold wires and the aluminum wires for high-temperature applications up to an Arrhenius equivalent of 800 hours at 260°C. Additionally, Parylene HT coating was vapor-deposited on one set of 250-um Al wire-bonding samples. This set of samples demonstrated doubling of its useful life as compared to the uncoated samples.

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Nagano, Mikinori, Fumiya Yamaga, Dai Yamazaki, Ryuji Maruyama, Kauhiko Soyama, and Kazuya Yamamura. "Quadruple Stacked Elliptical Supermirror Device for One Dimensional Neutron Focusing." Key Engineering Materials 523-524 (November 2012): 272–75. http://dx.doi.org/10.4028/www.scientific.net/kem.523-524.272.

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Focusing neutron beam with wide wavelength range is an indispensable technique used to compensate for weak signals from tiny samples in various experiments using pulsed neutron beam generated from high intensity proton accelerator facilities, such as J-PARC. Aspherical supermirror device is one of the most effective optical devices for focusing neutron beam with wide wavelength range since it has no chromatic aberration. Stack of aspherical supermirror enables us to focus neutron beams with wide divergence. Thin mirrors with a millimeter thickness are required to minimize the absorption loss of incident neutron beams since the thickness of a mirror shadows the reflective area of the other mirrors. Previously, we developed a fabrication process of a precise millimeter-thick elliptical supermirror. This process consists of noncontact figuring by the numerically controlled local wet etching technique, the finishing of surface without degrading mirror shape by low-pressure polishing, and the ion beam sputter deposition of NiC/Ti multilayers on both sides of the mirror substrate to compensate for film stress. In this paper, we report fabrication of elliptical supermirror with a thickness of 1 mm and development of multiply-arranged neutron focusing mirror device using stacked 4 fabricated elliptical supermirror with a thickness of 1mm.

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Jiang, Jiaqi, and Jonathan A. Fan. "Multiobjective and categorical global optimization of photonic structures based on ResNet generative neural networks." Nanophotonics 10, no. 1 (September 22, 2020): 361–69. http://dx.doi.org/10.1515/nanoph-2020-0407.

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AbstractWe show that deep generative neural networks, based on global optimization networks (GLOnets), can be configured to perform the multiobjective and categorical global optimization of photonic devices. A residual network scheme enables GLOnets to evolve from a deep architecture, which is required to properly search the full design space early in the optimization process, to a shallow network that generates a narrow distribution of globally optimal devices. As a proof-of-concept demonstration, we adapt our method to design thin-film stacks consisting of multiple material types. Benchmarks with known globally optimized antireflection structures indicate that GLOnets can find the global optimum with orders of magnitude faster speeds compared to conventional algorithms. We also demonstrate the utility of our method in complex design tasks with its application to incandescent light filters. These results indicate that advanced concepts in deep learning can push the capabilities of inverse design algorithms for photonics.

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ZELNER, M., S. NAGY, A. CERVIN-LAWRY, M. CAPANU, T. BERNACKI, and C. DIVITA. "AN EFFECTIVE PASSIVATION FILM STACK FOR THIN FILM BST CAPACITORS." Integrated Ferroelectrics 104, no. 1 (December 9, 2008): 80–89. http://dx.doi.org/10.1080/10584580802594741.

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28

Sathyamurthy, Srivatsan, Mariappan Paranthaman, Lee Heatherly, Patrick M. Martin, E. D. Specht, Amit Goyal, Thomas Kodenkandath, Xiaoping Li, and Martin W. Rupich. "Solution-processed lanthanum zirconium oxide as a barrier layer for high Ic-coated conductors." Journal of Materials Research 21, no. 4 (April 1, 2006): 910–14. http://dx.doi.org/10.1557/jmr.2006.0112.

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High-quality lanthanum zirconium oxide (La2Zr2O7 or LZO) films have been deposited and processed on Ni–W substrates using a sol-gel processing approach. It has been demonstrated that crack-free coatings with thicknesses up to 100 nm can be processed in a single step, while thicker coatings (200–225 nm) were processed using a multiple coating and annealing process. Using simulated metalorganic deposition (MOD)-YBa2Cu3O7−δ (YBCO) processing conditions, the barrier properties of the sol-gel LZO coating with a thickness of 120 nm were found to be comparable to that of the standard 3-layer buffer stack deposited using physical vapor deposition. Secondary ion mass spectroscopy depth profile analysis of LZO films annealed in oxygen-18 shows that LZO effectively stops the diffusion of Ni within the first 80–100 nm. Using MOD processes, a CeO2 cap layer and superconducting YBCO layer were deposited on sol-gel LZO/Ni–W. For the first time, using such an all-solution conductor architecture, a critical current (Ic) of 140 A/cm with a corresponding critical current density (Jc) of 1.75 MA/cm2 has been demonstrated. Using a very thin Y2O3 seed layer (∼10 nm) deposited by electron beam evaporation; improved texture quality in the LZO layers has been demonstrated. The performance of the LZO deposited on these samples was evaluated using a sputtered CeO2 cap layer and MOD YBCO layer. Critical currents of up to 255 A/cm (3.2 MA/cm2) with 0.8-μm-thick YBCO films have been demonstrated, comparable to the performance of films grown using physical vapor deposited yttria stabilized zirconia as a barrier layer. Similar experiments using an MOD-CeO2 cap layer and MOD-YBCO layer yielded critical currents of 200 A/cm (2.5 MA/cm2) with 0.8-μm-thick YBCO films.

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Lim, Kim Peng, Doris Keh Ting Ng, Jing Pu, Yeow Teck Toh, Tjiptoharsono Febiana, Krishnamurthy Vivek, and Qian Wang. "Graded-index thin-film stack for cladding and coupling." Applied Optics 55, no. 24 (August 18, 2016): 6752. http://dx.doi.org/10.1364/ao.55.006752.

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30

Lee, Seongkuk, Dongfang Yang, and Suwas Nikumb. "Femtosecond laser patterning of Ta0.1W0.9Ox/ITO thin film stack." Applied Surface Science 253, no. 10 (March 2007): 4740–47. http://dx.doi.org/10.1016/j.apsusc.2006.10.040.

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31

Al-Shareef, H. N., D. Dimos, B. A. Tuttle, and M. V. Raymond. "Metallization schemes for dielectric thin film capacitors." Journal of Materials Research 12, no. 2 (February 1997): 347–54. http://dx.doi.org/10.1557/jmr.1997.0050.

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A detailed analysis of Pt/Ti, Pt/TiO2, and Pt/ZrO2 electrodes was carried out to develop a bottom electrode stack for sol-gel derived thin film capacitors. For the Pt/Ti stack, the choice of layer thickness and deposition temperature is found to affect adhesion to the SiO2/Si substrate as well as the extent of hillock formation and Pt–Ti interaction. By using elevated temperature deposition, Pt films close to 1 μm in thickness can be produced with relatively good adhesion and morphological stability using Ti adhesion layers. In addition, Pt films grown on ZrO2 and TiO2 adhesion layers exhibit little morphological change and no degradation in sheet resistance after annealing at 650 °C. However, neither ZrO2 nor TiO2 are as effective as Ti metal in promoting Pt adhesion. Experiments aimed at establishing a correlation between hillock formation and capacitor yield revealed two important results. First, the behavior of Pt/Ti stacks during annealing in air is markedly different from their behavior during PZT film crystallization. Second, preannealing of the Pt/Ti in air prior to PZT film growth actually improves capacitor yield, even though hillock formation occurs during the preannealing treatment. Implications of these results regarding the role of hillocks in controlling capacitor yield are discussed.

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32

Chen, Sheng-Hui, Kai Wu, Chien-Cheng Kuo, Sheng-Ju Ma, and Cheng-Chung Lee. "System for measuring optical admittance of a thin film stack." Optical Review 16, no. 4 (July 2009): 479–82. http://dx.doi.org/10.1007/s10043-009-0093-5.

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33

Jen, Yi-Jun, and Wei-Chin Liu. "Design a Stratiform Metamaterial with Precise Optical Property." Symmetry 11, no. 12 (December 1, 2019): 1464. http://dx.doi.org/10.3390/sym11121464.

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In this work, a stratiform metamaterial is arranged as multiple periods of metal-dielectric symmetrical film stack to provide precise equivalent refractive index and admittance. There are multiple solutions of equivalent refractive index retrieved from the characteristic matrix of the film stack. The correct refractive index is derived by connecting different branches of solution at different ranges of wavelength or thickness of the dielectric layer. The refractive index of an Ag-TiO2 five-layered symmetrical film stack shown in previous work is demonstrated to be positive real instead of negative real. The associated type I iso-frequency curve supports negative refraction. In order to extend the operating wavelength of type I metamaterial, the number of the metal-dielectric symmetrical film stack is increased to reduce the thickness of the dielectric film to approach subwavelength requirement.

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34

Nichogi, Katsuhiro, and Mutsuaki Murakami. "Highly oriented thin film of a mixed-stack charge-transfer complex." Thin Solid Films 303, no. 1-2 (July 1997): 277–81. http://dx.doi.org/10.1016/s0040-6090(97)00078-3.

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35

Lifka, H., H. A. van Esch, and J. J. W. M. Rosink. "50.3: Thin Film Encapsulation of OLED Displays with a NONON Stack." SID Symposium Digest of Technical Papers 35, no. 1 (2004): 1384. http://dx.doi.org/10.1889/1.1825767.

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36

Castelletto, Stefania, and Alberto Boretti. "Multiple Semiconductors Thin Film Solar Cells." Nanoscience and Nanotechnology Letters 5, no. 1 (January 1, 2013): 51–56. http://dx.doi.org/10.1166/nnl.2013.1403.

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37

Girardi, M. A., K. A. Peterson, P. T. Vianco, R. Grondin, and D. Wieliczka. "Laser Ablation of Thin Films on LTCC." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000677–86. http://dx.doi.org/10.4071/isom-wp33.

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Direct Digital Manufacturing techniques such as laser ablation are proposed for the fabrication of lower cost, miniaturized, and lightweight integrated assemblies with high performance requirements. This paper investigates the laser ablation of a Ti/Cu/Pt/Au thin film metal stack on fired low temperature cofired ceramic (LTCC) surfaces using a 355 nm Nd:YAG diode pumped laser ablation system. It further investigates laser ablation applications using unfired, or ‘green’, LTCC materials: (1) through one layer of a laminated stack of unfired LTCC tape to a buried thick film conductor ground plane, and (2) in unfired Au thick films. The UV laser power profile and part fixturing were optimized to address defects such as LTCC microcracking, thin film adhesion failures, and redeposition of Cu and Pt. An alternate design approach to minimize ablation time was tested for efficiency in manufacture. Multichip Modules (MCM) were tested for solderability, solder leach resistance, and wire bondability. Scanning electron microscopy (SEM) as well as cross sections and microanalytical techniques were used in this study.

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38

Gou, Xianhua, Qing Zhang, Yunling Wu, Yajing Zhao, Xiaofei Shi, Xing Fan, Lizhen Huang, and Guang Lu. "Preparation and engineering of oriented 2D covalent organic framework thin films." RSC Advances 6, no. 45 (2016): 39198–203. http://dx.doi.org/10.1039/c6ra07417k.

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39

Kim, S. B., T. Kimoto, S. Hahn, Y. Iwasa, J. Voccio, and M. Tomita. "Study on optimization of YBCO thin film stack for compact NMR magnets." Physica C: Superconductivity 484 (January 2013): 295–99. http://dx.doi.org/10.1016/j.physc.2012.02.042.

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40

Chung, Brandon W., Christopher N. Chervin, Jeffery J. Haslam, Ai-Quoc Pham, and Robert S. Glass. "Development and Characterization of a High Performance Thin-Film Planar SOFC Stack." Journal of The Electrochemical Society 152, no. 2 (2005): A265. http://dx.doi.org/10.1149/1.1843551.

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41

Li, Yen-Yin, Yin-Wen Lee, Tuan-Shu Ho, Jhih-Hong Wang, I.-Chou Wu, Ting-Wei Hsu, Yu-Tung Chen, and Sheng-Lung Huang. "Spectroscopic characterization of Si/Mo thin-film stack at extreme ultraviolet range." Optics Letters 43, no. 16 (August 14, 2018): 4029. http://dx.doi.org/10.1364/ol.43.004029.

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42

Kim, Seong-Sue, Yoon-Ki Kim, In-Sik Park, and Sung-Chul Shin. "Optical properties of a thin-film stack illuminated by a focused field." Journal of the Optical Society of America A 17, no. 8 (August 1, 2000): 1454. http://dx.doi.org/10.1364/josaa.17.001454.

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43

van Assche, F. J. H., R. T. Vangheluwe, J. W. C. Maes, W. S. Mischke, M. D. Bijker, F. C. Dings, M. F. J. Evers, W. M. M. Kessels, and M. C. M. van de Sanden. "P-111: A Thin Film Encapsulation Stack for PLED and OLED Displays." SID Symposium Digest of Technical Papers 35, no. 1 (2004): 695. http://dx.doi.org/10.1889/1.1831072.

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44

Heinilehto, Santtu T., Jyrki H. Lappalainen, Heli M. Jantunen, and Vilho Lantto. "IR-wavelength optical shutter based on ITO/VO2/ITO thin film stack." Journal of Electroceramics 27, no. 1 (April 16, 2010): 7–12. http://dx.doi.org/10.1007/s10832-010-9604-9.

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45

Girardi, M. A., K. A. Peterson, P. T. Vianco, R. Grondin, and D. Wieliczka. "Laser Ablation of Thin Films on Low Temperature Cofired Ceramic." Journal of Microelectronics and Electronic Packaging 12, no. 2 (August 1, 2015): 72–79. http://dx.doi.org/10.4071/imaps.457.

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Direct digital manufacturing techniques such as laser ablation are proposed for the fabrication of lower cost, miniaturized, and lightweight integrated assemblies with high performance requirements. This paper investigates the laser ablation of a Ti/Cu/Pt/Au thin-film metal stack on fired low temperature cofired ceramic (LTCC) surfaces using a 355-nm Nd:YAG diode-pumped laser ablation system. It further investigates laser ablation applications using unfired, or “green,” LTCC materials in the following ways: (1) through one layer of a laminated stack of unfired LTCC tape to a buried thick-film-conductor ground plane, and (2) in unfired Au thick films. The UV-laser power profile and part fixturing were optimized to address defects such as LTCC microcracking, thin-film adhesion failures, and redeposition of Cu and Pt. An alternate design approach to minimize ablation time was tested for efficiency in manufacture. Multichip modules were tested for solderability, solder leach resistance, and wire bondability. Scanning electron microscopy, as well as cross sections and microanalytical techniques, were used in this study.

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46

Montecchi, Marco, Alberto Mittiga, Claudia Malerba, and Francesca Menchini. "KSEMAW: an open source software for the analysis ofspectrophotometric, ellipsometric andphotothermal deflection spectroscopy measurements." Open Research Europe 1 (August 18, 2021): 95. http://dx.doi.org/10.12688/openreseurope.13842.1.

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The optical behavior of devices based on thin films is determined by complex refractive index and thickness of each slab composing the stack; these important parameters are usually evaluated from photometric and/or ellipsometric spectral measurements, given a model of the stack, by means of dedicated software. In the case of complex multilayer devices, generally a number of simpler specimens (like single-film on substrate) must be preliminarily characterized. This paper introduces the reader to a new open source software for thin film characterization finally released after about 30 years of development. The software has already been used in various fields of physics, such as thin film optical filters, architectural glazing, detectors for high energy physics, solar energy, and, last but not least, photovoltaic devices. Code source files, user manual as well as a sample of working directories populated with assorted files can be freely downloaded from the kSEMAW GitHub repository.

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47

Fu, Xiu Hua, Yong Gang Pan, Dong Mei Liu, Jing Zhang, and Xiao Juan Wang. "Research of Thin Film for Laser Polarization Beam Splitter." Key Engineering Materials 645-646 (May 2015): 381–87. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.381.

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Based on the design theory of film stack,H4 and SiO2 were selected as the high and low refractive index materials respectively. Through optimization by Macleod and TFCalc software, plus considering the internal electric field intensity distribution of film and laser induced damage threshold as well,the beam-splitting film with Tp=65±5% and Ts=30±5% in the 600-700 band in condition of 45 °± 3 ° incident angle has been achieved. Adopting electron beam ion assisted deposition system to development, the deposition parameters of materials has been optimized via orthogonal matrix experiment. The fabrication of thin film for laser polarization beam splitter has been succeeded. Its optical properties, mechanical properties and resistance to environmental test of the film have been approved to meet all using requirements.

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48

Shih, Andy, and Akintunde Ibitayo Akinwande. "Solution-Processed High-Voltage Organic Thin Film Transistor." MRS Advances 2, no. 51 (2017): 2961–66. http://dx.doi.org/10.1557/adv.2017.359.

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ABSTRACTA 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (< 100°C) solution-processed fabrication method on borosilicate glass. High-voltage is an area not well developed in the organic transistor field and can be of benefit to various applications requiring such an operating range beyond that of conventional thin film transistors. Here, our HVOTFT exhibited a mobility μ of 0.005 cm2 V-1 s-1 and a breakdown voltage of VDS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of VDS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi1.5Zn1Nb1.5O7 (BZN) and parylene-C.

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49

Azzam, R. M. A. "Simplified design of thin-film polarizing beam splitter using embedded symmetric trilayer stack." Applied Optics 50, no. 19 (July 1, 2011): 3316. http://dx.doi.org/10.1364/ao.50.003316.

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50

Oda, Y., M. Matsubayashi, T. Minemoto, and H. Takakura. "Crystallization of In–Se/CuInSe2 thin-film stack by sequential electrodeposition and annealing." Journal of Crystal Growth 311, no. 3 (January 2009): 738–41. http://dx.doi.org/10.1016/j.jcrysgro.2008.09.090.

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Journal articles on the topic 'Multiple thin film stack'

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