Relevant bibliographies by topics / N-type , Naphtalenediimide-based , printed transistors

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  1. Journal articles
  2. Dissertations / Theses

Academic literature on the topic 'N-type , Naphtalenediimide-based , printed transistors'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "N-type , Naphtalenediimide-based , printed transistors"

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Liang, Kun, Huihui Ren, Dingwei Li, Yan Wang, Yingjie Tang, Momo Zhao, Hong Wang, Wenbin Li, and Bowen Zhu. "Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits." Journal of Materials Chemistry C 9, no. 35 (2021): 11662–68. http://dx.doi.org/10.1039/d1tc01512e.

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We achieved fully-printed SnO2 based n-type thin-film transistors with high electrical performance and robust mechanical flexibility, promising for constructing low-cost, high-performance flexible electronic devices and circuits.
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Mandal, Saumen, Gangadhar Purohit, and Monica Katiyar. "Inkjet Printed Organic Thin Film Transistors: Achievements and Challenges." Materials Science Forum 736 (December 2012): 250–74. http://dx.doi.org/10.4028/www.scientific.net/msf.736.250.

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Inkjet printing of organic thin film transistors is an enabling technology for many applications requiring low cost electronics such as RFID tags, sensors, e-paper, and displays. This review summarizes the achievements and remaining challendges in the field. An all inkjet printed organic thin film transistor is feasible, but manufacturability needs to be improved. Often, a hybrid process in which only some layers are inkjet printed is used. Development of devices requires optimization of (1) ink chemistry, (2) inkjet process, (3) substrate ink interaction, and (4) new device structures. Several conducting, dielectric and semiconducting materials have been used to formulate ink. It appears that metal nanoparticle based conducting ink and PEDOT:PSS are widely used materials to fabricate source, drain and gate electrodes. PVPh is the most popular dielectric material for inkjet printing. To print semiconducting layer, both polymers and oligomers/small molecules are used. Many high performance organic semiconductors are p-type, but few n-type organic semiconductors show excellent performance. In addition to improved materials, challenges inherent in the inkjet process also need solutions. These are registration, alignment of the source,and drain with gate, resolution, reducing off-state current, and roll-to-roll processing.
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Zhang, Xiang, Jianwen Zhao, Junyan Dou, Masayoshi Tange, Weiwei Xu, Lixin Mo, Jianjun Xie, et al. "Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors." Small 12, no. 36 (May 6, 2016): 5066–73. http://dx.doi.org/10.1002/smll.201600452.

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Lu, Jianping, Afshin Dadvand, Ta-ya Chu, Raluca Movileanu, Jean-Marc Baribeau, Jianfu Ding, and Ye Tao. "Inkjet-printed unipolar n-type transistors on polymer substrates based on dicyanomethylene-substituted diketopyrrolopyrrole quinoidal compounds." Organic Electronics 63 (December 2018): 267–75. http://dx.doi.org/10.1016/j.orgel.2018.09.035.

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LI, YUNING, and BENG S. ONG. "HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS." COSMOS 05, no. 01 (May 2009): 59–77. http://dx.doi.org/10.1142/s0219607709000427.

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Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.
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Chandra, Aditi, Mao Takashima, and Arvind Kamath. "Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils." MRS Advances 2, no. 23 (2017): 1259–65. http://dx.doi.org/10.1557/adv.2017.227.

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ABSTRACTPolysilicon complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) are fabricated on large area, flexible stainless steel foils using novel ink depositions within a hybrid printed/conventional process flow. A self-aligned top gate TFT structure is realized with an additive materials approach to substitute the use of high capital cost ion implantation and lithography processes. Polyhydrosilane-based silicon ink is coated and laser crystallized to form the polysilicon channel. Semiconductor grade P-type and N-type unique dopant ink formulations are screen printed and combined with thermal drive in and activation to form self-aligned doped source and drain regions. A high refractory top gate material is chosen for its process compatibility with printed dopants, chemical resistance, and work function. Steel foil substrates are fully encapsulated to allow for high temperature processing. The resultant materials set and process flow enables TFT electrical characteristics with NMOS and PMOS mobilities exceeding 120 cm2/Vs and 60 cm2/Vs, respectively. On/Off ratios are >107. Reproducibility, uniformity, and reliability data in a production environmental is shown to demonstrate high volume, high throughput manufacturability. The device characteristics and scheme enable NFC (13.56MHz) capable circuits for use in flexible NFC and display-based smart labels and packaging.
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Shevchenko, Viktor, Bohdan Pakhaliuk, Oleksandr Husev, Oleksandr Veligorskyi, Deniss Stepins, and Ryszard Strzelecki. "Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter." Energies 13, no. 17 (September 1, 2020): 4535. http://dx.doi.org/10.3390/en13174535.

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A promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the system is performed: semiconductors and magnetic elements. System modeling was performed using Power Electronics Simulation Software (PSIM). It is shown that the main losses of the system are static losses in the filter inductor and rectifier diodes on the secondary side, while GaN transistors can be successfully used for the wireless power transfer system. The main features of the Printed Circuit Board (PCB) design of GaN transistors are considered in advance.
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Chandra, Aditi, Mao Takashima, Martha Montague, Joey Li, and Arvind Kamath. "Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon." MRS Advances 1, no. 14 (2016): 965–70. http://dx.doi.org/10.1557/adv.2016.118.

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ABSTRACTThis article describes the electrical and physical properties of polysilicon doped with novel N+ and P+ screen printed inks using a thermally activated process. Unique ink formulations for N and P type doping of silicon are evaluated in volume production in order to enable a low cost, high throughput process. Inks can be used with multiple substrate types and form factors. The concentrated doping source combined with thermal drive in and activation results in degenerately doped layers of polysilicon. Inks are semiconductor grade which is demonstrated by their use in fabricating high mobility, low leakage Thin Film Transistor (TFT) devices on 300 mm stainless steel substrates. Reproducible sheet resistance values (700 A polysilicon) can be engineered from levels typically ranging from 200 - 2000 ohm/sq. The additive approach substitutes the use of high capital cost ion implantation and lithography processes. The ink formulation results in screen printed widths capable of ranging from 100-300 um. As both N and P type layers can be printed adjacent to each other, it is critical to prevent cross doping using surface preparation techniques. Post doping cleaning of surfaces can be achieved in-situ or by plasma removal depending on process integration and product considerations. Reproducibility and uniformity data to demonstrate manufacturability in a production environment is shown. In summary, a simple, low cost, high throughput additive process based on proprietary inks that can be used in multiple product flows (CMOS TFT, Solar etc.) is demonstrated.
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Horii, Yoshinori, Mitsuhiro Ikawa, Masayuki Chikamatsu, Reiko Azumi, Masahiko Kitagawa, Hisatoshi Konishi, and Kiyoshi Yase. "Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp." ACS Applied Materials & Interfaces 3, no. 3 (March 2, 2011): 836–41. http://dx.doi.org/10.1021/am101193y.

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Ye, Heqing, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam, and Se Hyun Kim. "Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing." Nanomaterials 10, no. 7 (July 3, 2020): 1304. http://dx.doi.org/10.3390/nano10071304.

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The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.
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Dissertations / Theses on the topic "N-type , Naphtalenediimide-based , printed transistors"

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Schmidt, Georg C., Daniel Höft, Katherina Haase, Arved C. Hübler, E. Karpov, R. Tkachov, M. Stamm, et al. "Naphtalenediimide-based donor–acceptor copolymer prepared by chain-growth catalyst-transfer polycondensation: evaluation of electron-transporting properties and application in printed polymer transistors." Universitätsbibliothek Chemnitz, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-146244.

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The semiconducting properties of a bithiophene-naphthalene diimide copolymer (PNDIT2) prepared by Ni-catalyzed chain-growth polycondensation (P1) and commercially available N2200 synthesized by Pd-catalyzed step-growth polycondensation were compared. Both polymers show similar electron mobility of [similar]0.2 cm2 V−1 s−1, as measured in top-gate OFETs with Au source/drain electrodes. It is noteworthy that the new synthesis has several technological advantages compared to traditional Stille polycondensation, as it proceeds rapidly at room temperature and does not involve toxic tin-based monomers. Furthermore, a step forward to fully printed polymeric devices was achieved. To this end, transistors with PEDOT:PSS source/drain electrodes were fabricated on plastic foils by means of mass printing technologies in a roll-to-roll printing press. Surface treatment of the printed electrodes with PEIE, which reduces the work function of PEDOT:PSS, was essential to lower the threshold voltage and achieve high electron mobility. Fully polymeric P1 and N2200-based OFETs achieved average linear and saturation FET mobilities of >0.08 cm2 V−1 s−1. Hence, the performance of n-type, plastic OFET devices prepared in ambient laboratory conditions approaches those achieved by more sophisticated and expensive technologies, utilizing gold electrodes and time/energy consuming thermal annealing and lithographic steps
Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich
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Santos, Ângelo Emanuel Neves dos. "Design and simulation of a smart bottle with fill-level sensing based on oxide TFT technology." Master's thesis, 2016. http://hdl.handle.net/10362/19593.

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Packaging is an important element responsible for brand growth and one of the main rea-sons for producers to gain competitive advantages through technological innovation. In this re-gard, the aim of this work is to design a fully autonomous electronic system for a smart bottle packaging, being integrated in a European project named ROLL-OUT. The desired application for the smart bottle is to act as a fill-level sensor system in order to determine the liquid content level that exists inside an opaque bottle, so the consumer can exactly know the remaining quantity of the product inside. An in-house amorphous indium–gallium–zinc oxide thin-film transistor (a-IGZO TFT) model, previously developed, was used for circuit designing purposes. This model was based in an artificial neural network (ANN) equivalent circuit approach. Taking into account that only n-type oxide TFTs were used, plenty of electronic building-blocks have been designed: clock generator, non-overlapping phase generator, a capacitance-to-voltage converter and a comparator. As it was demonstrated by electrical simulations, it has been achieved good functionality for each block, having a final system with a power dissipation of 2.3 mW (VDD=10 V) not considering the clock generator. Four printed circuit boards (PCBs) have been also designed in order to help in the testing phase. Mask layouts were already designed and are currently in fabrication, foreseeing a suc-cessful circuit fabrication, and a major step towards the design and integration of complex trans-ducer systems using oxide TFTs technology.
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