Journal articles: 'N-type , Naphtalenediimide-based , printed transistors'

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Liang, Kun, Huihui Ren, Dingwei Li, Yan Wang, Yingjie Tang, Momo Zhao, Hong Wang, Wenbin Li, and Bowen Zhu. "Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits." Journal of Materials Chemistry C 9, no. 35 (2021): 11662–68. http://dx.doi.org/10.1039/d1tc01512e.

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We achieved fully-printed SnO2 based n-type thin-film transistors with high electrical performance and robust mechanical flexibility, promising for constructing low-cost, high-performance flexible electronic devices and circuits.

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Mandal, Saumen, Gangadhar Purohit, and Monica Katiyar. "Inkjet Printed Organic Thin Film Transistors: Achievements and Challenges." Materials Science Forum 736 (December 2012): 250–74. http://dx.doi.org/10.4028/www.scientific.net/msf.736.250.

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Inkjet printing of organic thin film transistors is an enabling technology for many applications requiring low cost electronics such as RFID tags, sensors, e-paper, and displays. This review summarizes the achievements and remaining challendges in the field. An all inkjet printed organic thin film transistor is feasible, but manufacturability needs to be improved. Often, a hybrid process in which only some layers are inkjet printed is used. Development of devices requires optimization of (1) ink chemistry, (2) inkjet process, (3) substrate ink interaction, and (4) new device structures. Several conducting, dielectric and semiconducting materials have been used to formulate ink. It appears that metal nanoparticle based conducting ink and PEDOT:PSS are widely used materials to fabricate source, drain and gate electrodes. PVPh is the most popular dielectric material for inkjet printing. To print semiconducting layer, both polymers and oligomers/small molecules are used. Many high performance organic semiconductors are p-type, but few n-type organic semiconductors show excellent performance. In addition to improved materials, challenges inherent in the inkjet process also need solutions. These are registration, alignment of the source,and drain with gate, resolution, reducing off-state current, and roll-to-roll processing.

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Zhang, Xiang, Jianwen Zhao, Junyan Dou, Masayoshi Tange, Weiwei Xu, Lixin Mo, Jianjun Xie, et al. "Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors." Small 12, no. 36 (May 6, 2016): 5066–73. http://dx.doi.org/10.1002/smll.201600452.

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Lu, Jianping, Afshin Dadvand, Ta-ya Chu, Raluca Movileanu, Jean-Marc Baribeau, Jianfu Ding, and Ye Tao. "Inkjet-printed unipolar n-type transistors on polymer substrates based on dicyanomethylene-substituted diketopyrrolopyrrole quinoidal compounds." Organic Electronics 63 (December 2018): 267–75. http://dx.doi.org/10.1016/j.orgel.2018.09.035.

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LI, YUNING, and BENG S. ONG. "HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS." COSMOS 05, no. 01 (May 2009): 59–77. http://dx.doi.org/10.1142/s0219607709000427.

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Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.

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Chandra, Aditi, Mao Takashima, and Arvind Kamath. "Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils." MRS Advances 2, no. 23 (2017): 1259–65. http://dx.doi.org/10.1557/adv.2017.227.

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ABSTRACTPolysilicon complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) are fabricated on large area, flexible stainless steel foils using novel ink depositions within a hybrid printed/conventional process flow. A self-aligned top gate TFT structure is realized with an additive materials approach to substitute the use of high capital cost ion implantation and lithography processes. Polyhydrosilane-based silicon ink is coated and laser crystallized to form the polysilicon channel. Semiconductor grade P-type and N-type unique dopant ink formulations are screen printed and combined with thermal drive in and activation to form self-aligned doped source and drain regions. A high refractory top gate material is chosen for its process compatibility with printed dopants, chemical resistance, and work function. Steel foil substrates are fully encapsulated to allow for high temperature processing. The resultant materials set and process flow enables TFT electrical characteristics with NMOS and PMOS mobilities exceeding 120 cm2/Vs and 60 cm2/Vs, respectively. On/Off ratios are >107. Reproducibility, uniformity, and reliability data in a production environmental is shown to demonstrate high volume, high throughput manufacturability. The device characteristics and scheme enable NFC (13.56MHz) capable circuits for use in flexible NFC and display-based smart labels and packaging.

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Shevchenko, Viktor, Bohdan Pakhaliuk, Oleksandr Husev, Oleksandr Veligorskyi, Deniss Stepins, and Ryszard Strzelecki. "Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter." Energies 13, no. 17 (September 1, 2020): 4535. http://dx.doi.org/10.3390/en13174535.

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A promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the system is performed: semiconductors and magnetic elements. System modeling was performed using Power Electronics Simulation Software (PSIM). It is shown that the main losses of the system are static losses in the filter inductor and rectifier diodes on the secondary side, while GaN transistors can be successfully used for the wireless power transfer system. The main features of the Printed Circuit Board (PCB) design of GaN transistors are considered in advance.

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Chandra, Aditi, Mao Takashima, Martha Montague, Joey Li, and Arvind Kamath. "Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon." MRS Advances 1, no. 14 (2016): 965–70. http://dx.doi.org/10.1557/adv.2016.118.

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ABSTRACTThis article describes the electrical and physical properties of polysilicon doped with novel N+ and P+ screen printed inks using a thermally activated process. Unique ink formulations for N and P type doping of silicon are evaluated in volume production in order to enable a low cost, high throughput process. Inks can be used with multiple substrate types and form factors. The concentrated doping source combined with thermal drive in and activation results in degenerately doped layers of polysilicon. Inks are semiconductor grade which is demonstrated by their use in fabricating high mobility, low leakage Thin Film Transistor (TFT) devices on 300 mm stainless steel substrates. Reproducible sheet resistance values (700 A polysilicon) can be engineered from levels typically ranging from 200 - 2000 ohm/sq. The additive approach substitutes the use of high capital cost ion implantation and lithography processes. The ink formulation results in screen printed widths capable of ranging from 100-300 um. As both N and P type layers can be printed adjacent to each other, it is critical to prevent cross doping using surface preparation techniques. Post doping cleaning of surfaces can be achieved in-situ or by plasma removal depending on process integration and product considerations. Reproducibility and uniformity data to demonstrate manufacturability in a production environment is shown. In summary, a simple, low cost, high throughput additive process based on proprietary inks that can be used in multiple product flows (CMOS TFT, Solar etc.) is demonstrated.

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Horii, Yoshinori, Mitsuhiro Ikawa, Masayuki Chikamatsu, Reiko Azumi, Masahiko Kitagawa, Hisatoshi Konishi, and Kiyoshi Yase. "Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp." ACS Applied Materials & Interfaces 3, no. 3 (March 2, 2011): 836–41. http://dx.doi.org/10.1021/am101193y.

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Ye, Heqing, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam, and Se Hyun Kim. "Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing." Nanomaterials 10, no. 7 (July 3, 2020): 1304. http://dx.doi.org/10.3390/nano10071304.

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The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.

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Nekrasov, Nikita, Dmitry Kireev, Nejra Omerović, Aleksei Emelianov, and Ivan Bobrinetskiy. "Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules." Nanomaterials 9, no. 12 (December 10, 2019): 1753. http://dx.doi.org/10.3390/nano9121753.

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In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

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Zhao, Xiaofeng, Chenchen Jin, Qi Deng, Meiwei Lv, and Dianzhong Wen. "Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors." Sensors 18, no. 8 (August 4, 2018): 2551. http://dx.doi.org/10.3390/s18082551.

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A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity.

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Zomaya, Albert Y., Roger Karpin, and Stephan Olariu. "The Single Row Routing Problem Revisited: A Solution Based on Genetic Algorithms." VLSI Design 14, no. 2 (January 1, 2002): 123–41. http://dx.doi.org/10.1080/10655140290010051.

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With the advent of VLSI technology, circuits with more than one million transistors have been integrated onto a single chip. As the complexity of ICs grows, the time and money spent on designing the circuits become more important. A large, often dominant, part of the cost and time required to design an IC is consumed in the routing operation. The routing of carriers, such as in IC chips and printed circuit boards, is a classical problem in Computer Aided Design. With the complexity inherent in VLSI circuits, high performance routers are necessary. In this paper, a crucial step in the channel routing technique, the single row routing (SRR) problem, is considered. First, we discuss the relevance of SRR in the context of the general routing problem. Secondly, we show that heuristic algorithms are far from solving the general problem. Next, we introduce evolutionary computation, and, in particular, genetic algorithms (GAs) as a justifiable method in solving the SRR problem. Finally, an efficient O (nk) complexity technique based on GAs heuristic is obtained to solve the general SRR problem containing n nodes. Experimental results show that the algorithm is faster and can often generate better results than many of the leading heuristics proposed in the literature.

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Shlenkevitch, Dima, Sara Stolyarova, Tanya Blank, Igor Brouk, and Yael Nemirovsky. "Novel Miniature and Selective Combustion-Type CMOS Gas Sensor for Gas-Mixture Analysis—Part 1: Emphasis on Chemical Aspects." Micromachines 11, no. 4 (March 26, 2020): 345. http://dx.doi.org/10.3390/mi11040345.

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There is an ongoing effort to fabricate miniature, low cost, sensitive, and selective gas sensors for domestic and industrial uses. This paper presents a miniature combustion-type gas sensor (GMOS) based on a thermal sensor, where a micromachined CMOS–SOI transistor integrated with a catalytic reaction plate acts as a sensing element. This study emphasizes GMOS performance modeling, technological aspects, and sensing-selectivity issues. Two deposition techniques of a Pt catalytic layer suitable for wafer-level processing were compared, magnetron sputtering and nanoparticle inkjet printing. Both techniques have been useful for the fabrication of GMOS sensor, with good sensitivity to ethanol and acetone in the air. However, a printed Pt nanoparticle catalyst provides almost twice as much sensitivity as compared to that of the sputtered catalyst. Moreover, sensing selectivity in the ethanol/acetone gas mixture was demonstrated for the GMOS with a Pt nanoparticle catalyst. These advantages of GMOS allow for the fabrication of a low-cost gas sensor that requires a low power, and make it a promising technology for future smartphones, wearables, and Internet of Things (IoT) applications.

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Bai, Yunjia, Xiaofeng Zhao, Jiandong Hao, and Dianzhong Wen. "Mechanism research of negative resistance oscillations characteristics of the silicon magnetic sensitive transistor with long base region." International Journal of Modern Physics B 32, no. 24 (September 13, 2018): 1850261. http://dx.doi.org/10.1142/s0217979218502612.

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A silicon magnetic sensitive transistor (SMST) with the negative resistance oscillation phenomenon is presented in this paper. The SMST of cubic structure is composed of three regions and three electrodes (E, C and B). Two of the regions (collector region and base region) are designed on the top surface of the SMST, and the emitter region is designed at the bottom of the SMST. Using microelectromechanical system (MEMS) technology, the chip is fabricated on [Formula: see text] orientation p-type silicon (near intrinsic) wafer and packaged on printed circuit board (PCB). When collector voltage (V[Formula: see text]) and the base injecting current (I[Formula: see text]) are a certain value, the experimental results show that the collector current (I[Formula: see text]) attains negative resistance oscillation phenomenon and it is influenced by the external magnetic field (B) and temperature (T). Based on the effect of deep-level impurities on the carrier net recombination rate, theoretical analysis demonstrates that the deep-level impurities are the main factors of the appearance for oscillations phenomenon.

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Liebert, Karolina, Martyna Rachoń, Jarosław Bomba, Artur Sobczyk, Przemysław Zagrajek, Maciej Sypek, Jarosław Suszek, and Agnieszka Siemion. "THz diffractive focusing structures for broadband application." Photonics Letters of Poland 10, no. 3 (October 1, 2018): 76. http://dx.doi.org/10.4302/plp.v10i3.845.

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Analysis of optical structures that can work for broadband range of THz radiation is the aim of this article. Such structures can be designed as kinoforms of higher order or elements with extended depth of focus, like axicons or light sword elements. The theoretical and experimental comparison of different optical elements for three significantly different frequencies is performed. Full Text: PDF ReferencesM. C. Kemp, P.F. Taday, B.E. Cole, J.A. Cluff, A.J. Fitzgerald, W.R. Tribe, "Security applications of terahertz technology", International Society for Optics and Photonics, 5070, pp. 44-53 (2003). CrossRef D. Yavorskiy, J. Marczewski, K. Kucharski, et al., "THz Scanner Based on Planar Antenna-Supplied Silicon Field-Effect Transistors", Photonics Letters of Poland, 4(3), 100-102 (2012). CrossRef A.A. Angeluts, A.B. Gapeyev, M.N. Esaulkov, et al., "Study of terahertz-radiation-induced DNA damage in human blood leukocytes", Quantum Electronics, 44(3), 247 (2014). CrossRef Q. Sun, Y. He, K. Liu, S. Fan, E.P. Parrott, E. Pickwell-MacPherson, "Recent advances in terahertz technology for biomedical applications", Quantitative imaging in medicine and surgery, 7(3), 345 (2017). CrossRef J. Suszek, A. Siemion, M. Bieda, et al., "3-D-Printed Flat Optics for THz Linear Scanners", IEEE Thz Sci. T. 5, (2015). CrossRef M. Naftaly, R. Dudley, "Methodologies for determining the dynamic ranges and signal-to-noise ratios of terahertz time-domain spectrometers", Optics Letters, 34(8), 1213-1215 (2009). CrossRef C. Bruckner, G. Notnia, and A. Tünnermann, "Optimal arrangement of 90° off-axis parabolic mirrors in THz setups", Optik, 121, 1 (2010). CrossRef J. Richter, A. Hofmann, L.-P. Schmidt, "Dielectric Wide Angle Lenses for Millimeter-Wave Focal Plane Imaging", Proc. of the 31st European Microwave Conference, London, UK (2001). CrossRef E.D. Walsby, S. M. Durbin, D.R S. Cumming, R.J. Blaikie, "Analysis of silicon terahertz diffractive optics", Curr. App. Phys., 4, (2004). CrossRef J.A. Jordan Jr et al, Appl Opt., 9(8), 1883-1887 (1970) CrossRef J.C. Marron, D.K. Angell, A.M. Tai, "Higher-order kinoforms", International Society for Optics and Photonics, 1211, 62-67 (1990). CrossRef J. Suszek, A.M. Siemion, N. Błocki, M. Makowski, A. Czerwiński, J. Bomba, P. Zagrajek et al., "High order kinoforms as a broadband achromatic diffractive optics for terahertz beams", Optics Express, 22(3), 3137-3144 CrossRef J. Sochacki, A. Kołodziejczyk, Z. Jaroszewicz, S. Bara, "Nonparaxial design of generalized axicons", Applied Optics, 31(25), 5326-5330 (1992). CrossRef A. Kołodziejczyk, S. Bará, Z. Jaroszewicz, M. Sypek, "The Light Sword Optical Element—a New Diffraction Structure with Extended Depth of Focus", Journal of Modern Optics, 37(8), 1283-1286 (1990). CrossRef M. Sypek, "Light propagation in the Fresnel region. New numerical approach", Opt. Commun., 116, 43–48 (1995). CrossRef J.P. Kruth, X. Wang, T. Laoui, L. Froyen, "Lasers and materials in selective laser sintering", Assembly Automation, 23(4), 357-371 (2003). CrossRef

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Liang, Kun, Dingwei Li, Huihui Ren, Momo Zhao, Hong Wang, Mengfan Ding, Guangwei Xu, et al. "Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect." Nano-Micro Letters 13, no. 1 (August 3, 2021). http://dx.doi.org/10.1007/s40820-021-00694-4.

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AbstractMetal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the “coffee-ring” effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect. ITO has high electrical conductivity and is generally used as an electrode material. However, by reducing the film thickness down to nanometers scale, the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors. The ultrathin (~10-nm-thick) ITO film in the center of the coffee-ring worked as semiconducting channels, while the thick ITO ridges (>18-nm-thick) served as the contact electrodes. The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V−1 s−1 and a low subthreshold swing of 105 mV dec−1. In addition, the devices exhibited excellent electrical stability under positive bias illumination stress (PBIS, ΔVth = 0.31 V) and negative bias illuminaiton stress (NBIS, ΔVth = −0.29 V) after 10,000 s voltage bias tests. More remarkably, fully printed n-type metal–oxide–semiconductor (NMOS) inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V, promising for advanced electronics applications.

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Yang, Chi-Yuan, Marc-Antoine Stoeckel, Tero-Petri Ruoko, Han-Yan Wu, Xianjie Liu, Nagesh B. Kolhe, Ziang Wu, et al. "A high-conductivity n-type polymeric ink for printed electronics." Nature Communications 12, no. 1 (April 21, 2021). http://dx.doi.org/10.1038/s41467-021-22528-y.

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AbstractConducting polymers, such as the p-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), have enabled the development of an array of opto- and bio-electronics devices. However, to make these technologies truly pervasive, stable and easily processable, n-doped conducting polymers are also needed. Despite major efforts, no n-type equivalents to the benchmark PEDOT:PSS exist to date. Here, we report on the development of poly(benzimidazobenzophenanthroline):poly(ethyleneimine) (BBL:PEI) as an ethanol-based n-type conductive ink. BBL:PEI thin films yield an n-type electrical conductivity reaching 8 S cm−1, along with excellent thermal, ambient, and solvent stability. This printable n-type mixed ion-electron conductor has several technological implications for realizing high-performance organic electronic devices, as demonstrated for organic thermoelectric generators with record high power output and n-type organic electrochemical transistors with a unique depletion mode of operation. BBL:PEI inks hold promise for the development of next-generation bioelectronics and wearable devices, in particular targeting novel functionality, efficiency, and power performance.

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Kim, Dongjo, Sunho Jeong, Sul Lee, Bong-Kyun Park, and Jooho Moon. "Fabrication of Organic Thin Film Transistor Based on the Ink-Jet Printed Electrodes of Nano Silver Particles." MRS Proceedings 937 (2006). http://dx.doi.org/10.1557/proc-0937-m10-42.

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ABSTRACTIn this work, we here developed a conductive ink which contains silver nano-particles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing. Nano-sized silver particles having ∼ 20nm diameter was used for the direct metal printing. Silver conductive ink was printed on the heavily doped n-type silicon wafer with 200-nm thick thermal SiO2 layer as a substrate. To achieve a high line resolution and smooth conductive path, the printing conditions such as the inter-drop distance, stage moving velocity and temperature of the pre-heated substrates were optimized. After the heat-treatment at temperatures of about 100 ∼ 300 ° for 30 min, the printed silver patterns exhibit metal-like appearance and the conductivity. To fabricate a coplanar type TFTs, an active material of semiconducting polymer, which was dissolved in a proper solvent, was deposited between the ink-jet printed silver electrodes by solution process. The output and transfer characterization was measured in air. The OTFT with the ink-jetted source/drain electrodes show a mobility of 1.3 × 10−3 cm2 V−1 s−1 in the saturation regime and on/off current ratio over 103 and a threshold voltage of about −13 V.

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Kim, Bongjun, Michael L. Geier, Mark C. Hersam, and Ananth Dodabalapur. "Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors." Scientific Reports 7, no. 1 (February 1, 2017). http://dx.doi.org/10.1038/srep39627.

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Scholz, Alexander, Lukas Zimmermann, Ulrich Gengenbach, Liane Koker, Zehua Chen, Horst Hahn, Axel Sikora, Mehdi B. Tahoori, and Jasmin Aghassi-Hagmann. "Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors." Nature Communications 11, no. 1 (November 2, 2020). http://dx.doi.org/10.1038/s41467-020-19324-5.

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Abstract Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.

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Yang, Yuxin, Xiaofei Wei, Nannan Zhang, Juanjuan Zheng, Xing Chen, Qian Wen, Xinxin Luo, et al. "A non-printed integrated-circuit textile for wireless theranostics." Nature Communications 12, no. 1 (August 12, 2021). http://dx.doi.org/10.1038/s41467-021-25075-8.

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AbstractWhile the printed circuit board (PCB) has been widely considered as the building block of integrated electronics, the world is switching to pursue new ways of merging integrated electronic circuits with textiles to create flexible and wearable devices. Herein, as an alternative for PCB, we described a non-printed integrated-circuit textile (NIT) for biomedical and theranostic application via a weaving method. All the devices are built as fibers or interlaced nodes and woven into a deformable textile integrated circuit. Built on an electrochemical gating principle, the fiber-woven-type transistors exhibit superior bending or stretching robustness, and were woven as a textile logical computing module to distinguish different emergencies. A fiber-type sweat sensor was woven with strain and light sensors fibers for simultaneously monitoring body health and the environment. With a photo-rechargeable energy textile based on a detailed power consumption analysis, the woven circuit textile is completely self-powered and capable of both wireless biomedical monitoring and early warning. The NIT could be used as a 24/7 private AI “nurse” for routine healthcare, diabetes monitoring, or emergencies such as hypoglycemia, metabolic alkalosis, and even COVID-19 patient care, a potential future on-body AI hardware and possibly a forerunner to fabric-like computers.

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Li, Qian, Ju Lin, Tianying Liu, Han Zheng, and Jing Liu. "Printed flexible thin-film transistors based on different types of modified liquid metal with good mobility." Science China Information Sciences 62, no. 10 (August 29, 2019). http://dx.doi.org/10.1007/s11432-019-9918-4.

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"The Bakerian Lecture, 1988 - Amorphous semiconductors: a new generation of electronic materials." Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences 420, no. 1859 (December 8, 1988): 201–18. http://dx.doi.org/10.1098/rspa.1988.0124.

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The review deals with the electronic properties and recent applications of amorphous silicon (a-Si), which can be regarded as the first member of a new generation of electronically viable thin-film materials. After a brief introduction to the structure and the distribution of electronic states in a-Si the preparation of the material by the decomposition of silane in a radio-frequency glow discharge is discussed. The presence of hydrogen in the deposition process is of crucial importance; saturation of defect states, particularly of dangling bonds in the growing structure, leads to a material with a remarkably low density of gap states. Effective substitutional doping from the gas phase now becomes possible with wide-ranging control of the electronic properties. A brief discussion of the doping mechanism in amorphous solids is followed by a summary of carrier transport mechanisms in a-Si, investigated by fast transient techniques. The possibility of doping in a-Si has removed a major limitation in the a-semiconductor field and has, during the past 10 years, led to an upsurge in applied interest in this electronically controllable thin film material. A summary of the present state of applied developments, many already in industrial production, is given. Two groups are discussed in some detail. The first, the photovoltaic development, is based on the a-Si p–i–n junction, and forms part of a wide range of consumer products, but larger area photovoltaic panels are now in production. In the second major development a-Si field effect transistors are used as the addressable elements in large area liquid crystal displays. Remarkable progress has been made with thin film colour displays for small portable television sets. The use of a-Si elements in addressable linear image sensing arrays for telefax applications, coupled with a-Si high-voltage transistor arrays in the associated printers, represents an important step towards an integrated a-Si technology in large-area applications.

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