Relevant bibliographies by topics / N-type organic field-effect transistors (OFETs)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'N-type organic field-effect transistors (OFETs)'

Author: Grafiati
Published: 4 June 2025
Last updated: 1 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'N-type organic field-effect transistors (OFETs).'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "N-type organic field-effect transistors (OFETs)"

1

Fang, Po-Hsiang, Peng-Lin Kuo, Yu-Wu Wang, Horng-Long Cheng, and Wei-Yang Chou. "Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric." Polymers 15, no. 11 (2023): 2421. http://dx.doi.org/10.3390/polym15112421.

Full text
Abstract:
In this study, a high-K material, aluminum oxide (AlOx), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs. Thus,
APA, Harvard, Vancouver, ISO, and other styles
2

Quinn, Jesse T. E., Jiaxin Zhu, Xu Li, Jinliang Wang, and Yuning Li. "Recent progress in the development of n-type organic semiconductors for organic field effect transistors." Journal of Materials Chemistry C 5, no. 34 (2017): 8654–81. http://dx.doi.org/10.1039/c7tc01680h.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Niazi, Muhammad Rizwan, Ehsan Hamzehpoor, Pegah Ghamari, Igor F. Perepichka, and Dmitrii F. Perepichka. "Nitroaromatics as n-type organic semiconductors for field effect transistors." Chemical Communications 56, no. 47 (2020): 6432–35. http://dx.doi.org/10.1039/d0cc01236j.

Full text
Abstract:
The utility of the NO<sub>2</sub>-group in the design of organic semiconductors is demonstrated by fabricating OFETs with 5 nitrofluorenone derivatives and analyzing the effects of molecular and crystal structure on their charge transport characteristics.
APA, Harvard, Vancouver, ISO, and other styles
4

Tanmoy, Sarkar, Shamieh Basel, Verbeek Roy, Jisk Kronemeijer Auke, H. Gelinck Gerwin, and Frey Gitti. "Tuning Contact Resistance in Top-Contact p-Type and n-Type Organic Field Effect Transistors by Self-Generated Interlayers." Advanced Functional Materials, no. 2019 (December 19, 2019): 1805617. https://doi.org/10.1002/adfm.201805617.

Full text
Abstract:
Contact resistance significantly limits the performance of organic field-effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work-function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom-contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top-contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p- and n-type devices that is also suitable for top-contact OFETs. In
APA, Harvard, Vancouver, ISO, and other styles
5

Hu, Ben-Lin, Ke Zhang, Cunbin An, Wojciech Pisula, and Martin Baumgarten. "Thiadiazoloquinoxaline-Fused Naphthalenediimides for n-Type Organic Field-Effect Transistors (OFETs)." Organic Letters 19, no. 23 (2017): 6300–6303. http://dx.doi.org/10.1021/acs.orglett.7b03041.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Jeong, Yong Jin, Dong-Jin Yun, Jaeyoung Jang, et al. "Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing." Physical Chemistry Chemical Physics 17, no. 9 (2015): 6635–43. http://dx.doi.org/10.1039/c4cp05787b.

Full text
Abstract:
Solution-processed organic field effect transistors (OFETs) have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices.
APA, Harvard, Vancouver, ISO, and other styles
7

Bebiche, S., P. A. Cisneros-Perez, T. Mohammed-Brahim, et al. "Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors." Materials Chemistry Frontiers 2, no. 9 (2018): 1631–41. http://dx.doi.org/10.1039/c8qm00193f.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Lan, Shuqiong, Yujie Yan, Huihuang Yang, et al. "Improving device performance of n-type organic field-effect transistors via doping with a p-type organic semiconductor." Journal of Materials Chemistry C 7, no. 15 (2019): 4543–50. http://dx.doi.org/10.1039/c8tc05740k.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Ruiz, C., I. Arrechea-Marcos, A. Benito-Hernández, et al. "Solution-processed N-trialkylated triindoles for organic field effect transistors." Journal of Materials Chemistry C 6, no. 1 (2018): 50–56. http://dx.doi.org/10.1039/c7tc03866f.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Choi, Yongsuk, Hunyoung Bark, Boseok Kang, et al. "Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates." Journal of Materials Chemistry C 7, no. 28 (2019): 8599–606. http://dx.doi.org/10.1039/c9tc02177a.

Full text
Abstract:
We developed a patternable synthesis method of wafer-scale NbS<sub>2</sub>, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "N-type organic field-effect transistors (OFETs)"

1

Jimenez, Edwards. "Fabrication and transport studies of n-type OFETS using aligned array carbon nanotubes electrodes." Honors in the Major Thesis, University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/574.

Full text
Abstract:
We present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between the CNT source and drain electrodes, and compared against a controlled C60 OFET with gold electrodes. T
APA, Harvard, Vancouver, ISO, and other styles
2

Bebiche, Sarah. "OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité". Thesis, Rennes 1, 2015. http://www.theses.fr/2015REN1S105/document.

Full text
Abstract:
L'objectif de ce travail de recherche est l'élaboration et l'optimisation de transistors à effet de champ organiques de type N (OTFTs). Des transistors en structure Bottom Gate Bottom Contact sont fabriqués à basse température T&lt;120°C. Trois différentes molécules organiques conductrices d'électrons, déposées par évaporation thermiques, sont utilisées pour la couche active. Les OTFTs à base de la première molécule à corps LPP présentent de faibles mobilités à effet de champ de l'ordre de 10-5cm2/V.s. L'étude d'optimisation menée sur les conditions de dépôt de cette dernière n'a pas permis d'
APA, Harvard, Vancouver, ISO, and other styles
3

Gruntz, Guillaume. "Nouvelles architectures moléculaires électrodéficientes et solubles pour les transistors organiques à effet de champ de type n stables à l’air." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0217/document.

Full text
Abstract:
Un des enjeux principaux de l’électronique organique est le développement de circuits associant des transistors organiques à effet de champ (OFETs) de type p et de type n stables à l’air ainsi que leur fabrication par voie liquide. Si de nombreux matériaux de type p existent, les exemples de matériaux de type n stables sont plus rares. L’objectif de ce travail de thèse a ainsi été de concevoir, de synthétiser, et de caractériser de nouvelles molécules π-conjuguées électrodéficientes solubles afin de les intégrer dans des transistors organiques à effet de champ de type n (OFETs) stables à l’air
APA, Harvard, Vancouver, ISO, and other styles
4

El, Habchi Nguyen Sarah. "Transistors organiques à effet de champ pour une électronique flexible et écoresponsable : étude et optimisation d'OFET de type N sur substrats biosourcés." Electronic Thesis or Diss., Rennes 1, 2022. http://www.theses.fr/2022REN1S091.

Full text
Abstract:
L’utilisation de matériaux organiques permet la conception de différents dispositifs électroniques à basse température et sur différents types de substrats. Les transistors à effet de champ organiques (OFETs) en font partie, leurs performances électriques encourageantes permettent la réalisation de circuits intégrés. Cependant, ces performances et la stabilité électrique et à l’air des OFETs nécessitent encore des améliorations. Cette thèse s’inscrit dans ce contexte et se compose de deux volets principaux : 1) la réalisation d’OFETs sur substrat rigide à très basse température et 2) le transf
APA, Harvard, Vancouver, ISO, and other styles
5

Do, Thu Trang. "Electron deficient solution processable organic semiconductors for optoelectronic devices." Thesis, Queensland University of Technology, 2019. https://eprints.qut.edu.au/127140/2/Thu_Trang_Do_Thesis.pdf.

Full text
Abstract:
This research is a study of novel developed electron deficient semiconducting materials for optoelectronic devices. It investigates the molecular engineering aspects of new conjugated small molecular electron acceptors with desirable properties such as strong and broad absorption, high electron mobility, and suitable energy levels and good solubility for organic solar cell and organic thin film transistor applications. Furthermore the effect of alkyl chain length on solubility, thermal, optical, electrochemical properties, and device efficiencies is also studied.
APA, Harvard, Vancouver, ISO, and other styles
6

Goh, Roland Ghim Siong. "Carbon nanotubes for organic electronics." Thesis, Queensland University of Technology, 2008. https://eprints.qut.edu.au/20849/1/Roland_Goh_Thesis.pdf.

Full text
Abstract:
This thesis investigated the use of carbon nanotubes as active components in solution processible organic semiconductor devices. We investigated the use of functionalized carbon nanotubes in carbon nanotubes network transistors (CNNFET) and in photoactive composites with conjugated polymers. For CNNFETs, the objective was to obtain detailed understanding of the dependence of transistor characteristics on nanotubes bundle sizes, device geometry and processing. Single walled carbon nanotubes were functionalized by grafting octadecylamine chains onto the tubes, which rendered them dispersible in
APA, Harvard, Vancouver, ISO, and other styles
7

Goh, Roland Ghim Siong. "Carbon nanotubes for organic electronics." Queensland University of Technology, 2008. http://eprints.qut.edu.au/20849/.

Full text
Abstract:
This thesis investigated the use of carbon nanotubes as active components in solution processible organic semiconductor devices. We investigated the use of functionalized carbon nanotubes in carbon nanotubes network transistors (CNNFET) and in photoactive composites with conjugated polymers. For CNNFETs, the objective was to obtain detailed understanding of the dependence of transistor characteristics on nanotubes bundle sizes, device geometry and processing. Single walled carbon nanotubes were functionalized by grafting octadecylamine chains onto the tubes, which rendered them dispersible in
APA, Harvard, Vancouver, ISO, and other styles
8

方柏翔. "The Study on Air Stable N-type Organic Field Effect Transistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/69337586046170249302.

Full text
Abstract:
碩士<br>國立彰化師範大學<br>光電科技研究所<br>100<br>ABSTRACT In this study, we used F16CuPc superimposed on the PTCDI derivatives (PTCDI-C8, PTCDI-C13) to solve PTCDI organic thin film transistor in the air unstable characteristics. F16CuPc able to block the water and oxygen, let water and oxygen cannot form the trap affect the carrier transport. Therefore, we succeeded in reducing the threshold voltage 25.93 V to 18.9 V (PTCDI-C8) and 23.86 V to 18.6 V(PTCDI-C13). The field effect mobility of 0.25 cm2V-1s-1 (PTCDI-C8) and 0.4 cm2V-1s-1 (PTCDI-C13) were achieved. But used F16CuPc as water stopper layer and th
APA, Harvard, Vancouver, ISO, and other styles
9

Po-WeiLiang and 梁栢瑋. "Transformation of ambipolar to unipolar (N-type) pentacene-based organic field-effect transistors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/22493540111106915619.

Full text
Abstract:
碩士<br>國立成功大學<br>光電科學與工程研究所<br>98<br>This paper focuses on the transformation that the ambipolar organic field-effect transistor gradually transforms to N-type field-effect transistor. We observed that the hole flow of the ambipolar organic field-transistor gradually decreases with time, while the electron flow remains the same value. We noticed that the metal/active layer interface is the key to the process from the discussion to the experiment variables. This research proposes that the defect states at the interface affect the injection of hole. We attempt to use a model－the defects assist in
APA, Harvard, Vancouver, ISO, and other styles
10

Jer-WeiChang and 張哲維. "The study of n-type characteristics in pentacene-based organic field-effect transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/85204733582630449485.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "N-type organic field-effect transistors (OFETs)"

1

Sasaki, Y., and T. Minami. "Design of Chemical Sensors Based on Organic Transistors for Monitoring Food Safety and Quality." In Sensor Technologies for Food Quality and Safety. Royal Society of Chemistry, 2025. https://doi.org/10.1039/9781837674787-00022.

Full text
Abstract:
An organic field-effect transistor (OFET) is a small-sized electronic device that shows a non-linear switching profile upon applying a gate voltage. This chapter introduces methodologies and actual approaches based on an extended-gate-type OFET for selective and cross-reactive detection of food-related analytes. The OFET-based chemical sensors are functionalized with biogenic materials and artificial recognition materials on the extended-gate-electrode, which allows electrical detection of various analytes in aqueous media. The authors believe that the OFET-based sensor devices inspired by bio
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "N-type organic field-effect transistors (OFETs)"

1

Ringk, Andreas, Xiaoran Li, Fatemeh Gholamrezaie, et al. "N-type self-assembled monolayer field-effect transistors." In SPIE Organic Photonics + Electronics, edited by Zhenan Bao and Iain McCulloch. SPIE, 2012. http://dx.doi.org/10.1117/12.929535.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Fallon, Kealan, Nilushi Wijeyasinghe, Eric Manley, Tobin Marks, Thomas D. Anthopoulos, and Hugo A. Bronstein. "Indolo-naphthyridine-6,13-dione thiophene building block for conjugated polymer electronics: Molecular origin of ultrahigh n-type mobility (Conference Presentation)." In Organic Field-Effect Transistors XVI, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2017. http://dx.doi.org/10.1117/12.2273880.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Alsufyani, Maryam, Benjamin Moss, Karl Thorley, et al. "The role of electron affinity in advancing the electrical performance of n-type semiconducting polymers (Conference Presentation)." In Organic and Hybrid Field-Effect Transistors XXI, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2022. http://dx.doi.org/10.1117/12.2651707.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Yang, Yi, Huiwen Bai, Robert Nawrocki, Richard Voyles, and Haiyan Zhang. "Fractional Drift-Diffusion Model of Organic Field Effect Transistors Including Effects of Bending Stress for Smart Materials." In ASME 2021 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/smasis2021-68344.

Full text
Abstract:
Abstract This paper presents a fractional drift-diffusion (Fr-DD) model to characterize the transconductance characteristics of a 6,13-bis(triisopropylsilylethynyl)pentacene TIPS-pentacene based organic field effect transistor (OFET) when bending effects are taken into account. The Fr-DD model is proposed by fractionalizing the diffusive current density in the carrier continuity equations of the conventional drift-diffusion (DD) model. Gummel’s iteration is utilized to decouple the governing equations of the Fr-DD model. The solved hole concentration and electrostatic potentials on the metal-s
APA, Harvard, Vancouver, ISO, and other styles
5

Takatera, Yuji, Hirotake Kajii, and Yutaka Ohmori. "Solution-processed top-gate-type n-channel organic field-effect transistors with silver-nanowire source/drain electrodes fabricated on polymer substrate." In 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2014. http://dx.doi.org/10.1109/am-fpd.2014.6867173.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'N-type organic field-effect transistors (OFETs)' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography