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Journal articles on the topic 'Nanoscale p-n junction'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Majidi, Mohammad, Mohammad Taghi Ahmadi, and Meisam Rahmani. "Analytical Modeling of Carbon Nanoparticle-Based Symmetric p–n Junction." Advanced Science, Engineering and Medicine 11, no. 11 (2019): 1031–35. http://dx.doi.org/10.1166/asem.2019.2446.

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Outstanding physical and electrical properties such as quantum transport, high carrier mobility, excellent electrical and thermal conductivity, high surface area, good optical transparency, strong mechanical strength and easy fabrication make carbon nanoparticles appropriate on nanoelectronic applications. Carbon nanoparticle based p–n junction, as a fundamental structure of nanoscale devices, is analytically presented in this study. The carbon nanoparticle p–n interface reveals an improved transport along the junction in comparison with the conventional p–n junction. Controlling the doping of

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2

Lu, Ya Lin, Iyad A. Dajani, W. J. Mandeville, R. J. Knize, and S. S. Mao. "New p-n Junction Photodetector Using Optimized ZnO Nanorod Array." Solid State Phenomena 121-123 (March 2007): 809–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.809.

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In this research, nanoscale spatial resolution p-n junction photodetector arrays were developed using ZnO nanorod arrays grown on p-type silicon substrates. In order to optimize the nanorod array quality, an advanced combinatorial spreadsheet approach was used to optimize the Au catalyst thickness. The crystallinity of these as-grown ZnO nanorods’ was compared to that of bulk and thin film ZnO materials.

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Chen, Yubin, Zhixiao Qin, Xixi Wang, Xu Guo, and Liejin Guo. "Noble-metal-free Cu2S-modified photocatalysts for enhanced photocatalytic hydrogen production by forming nanoscale p–n junction structure." RSC Advances 5, no. 23 (2015): 18159–66. http://dx.doi.org/10.1039/c5ra00091b.

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4

Chernyak, Leonid, and Mikhail Klimov. "Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration." Applied Physics Letters 78, no. 11 (2001): 1613–15. http://dx.doi.org/10.1063/1.1355009.

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Zhao, Xiaodong, Huiming Ji, Qianqian Jia, and Mingjing Wang. "A nanoscale Co3O4–WO3 p–n junction sensor with enhanced acetone responsivity." Journal of Materials Science: Materials in Electronics 26, no. 10 (2015): 8217–23. http://dx.doi.org/10.1007/s10854-015-3484-3.

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Wang, Hong, Xiaoli Zheng, Haining Chen, Keyou Yan, Zonglong Zhu, and Shihe Yang. "The nanoscale carbon p–n junction between carbon nanotubes and N,B-codoped holey graphene enhances the catalytic activity towards selective oxidation." Chem. Commun. 50, no. 56 (2014): 7517–20. http://dx.doi.org/10.1039/c4cc01707b.

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7

Borblik, V. L. "Diffusion length of non-equilibrium current carriers in nanowire radial p-n junctions: Effect of the curvature." Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no. 4 (2022): 394–97. http://dx.doi.org/10.15407/spqeo25.04.394.

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In core-shell nanowire radial p-n junction, spatial (along the radius) distribution of the injected carriers is determined not only by recombination falling of the non-equilibrium carrier concentration but also by specific falling due to cylindrical symmetry of the structure. This forces us to consider an effective diffusion length of non-equilibrium carriers in nanoscale radial structures. This effective diffusion length proves to be larger (up to 25%) than the diffusion length in usual planar p-n junction (made of the same material) under injection from the shell to the core and smaller than

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8

Piazza, Valerio, Marco Vettori, Ahmed Ali Ahmed, et al. "Nanoscale investigation of a radial p–n junction in self-catalyzed GaAs nanowires grown on Si (111)." Nanoscale 10, no. 43 (2018): 20207–17. http://dx.doi.org/10.1039/c8nr03827a.

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9

Meng, Fanke, Jiangtian Li, Scott K. Cushing, Mingjia Zhi, and Nianqiang Wu. "Solar Hydrogen Generation by Nanoscale p–n Junction of p-type Molybdenum Disulfide/n-type Nitrogen-Doped Reduced Graphene Oxide." Journal of the American Chemical Society 135, no. 28 (2013): 10286–89. http://dx.doi.org/10.1021/ja404851s.

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10

Putri, Lutfi Kurnianditia, Boon-Junn Ng, Wee-Jun Ong, Hing Wah Lee, Wei Sea Chang, and Siang-Piao Chai. "Engineering nanoscale p–n junction via the synergetic dual-doping of p-type boron-doped graphene hybridized with n-type oxygen-doped carbon nitride for enhanced photocatalytic hydrogen evolution." Journal of Materials Chemistry A 6, no. 7 (2018): 3181–94. http://dx.doi.org/10.1039/c7ta09723a.

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11

Stokes, Adam, Mowafak Al-Jassim, Andrew Norman, David Diercks, and Brian Gorman. "Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se2solar cells." Progress in Photovoltaics: Research and Applications 25, no. 9 (2017): 764–72. http://dx.doi.org/10.1002/pip.2883.

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12

Atwater, Harry A., Stefan Maier, Albert Polman, Jennifer A. Dionne, and Luke Sweatlock. "The New “p–n Junction”: Plasmonics Enables Photonic Access to the Nanoworld." MRS Bulletin 30, no. 5 (2005): 385–89. http://dx.doi.org/10.1557/mrs2005.277.

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AbstractSince the development of the light microscope in the 16th century, optical device size and performance have been limited by diffraction. Optoelectronic devices of today are much bigger than the smallest electronic devices for this reason. Achieving control of light—material interactions for photonic device applications at the nanoscale requires structures that guide electromagnetic energy with subwavelength-scale mode confinement. By converting the optical mode into nonradiating surface plasmons, electromagnetic energy can be guided in structures with lateral dimensions of less than 10

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13

Panasci, Salvatore Ethan, Emanuela Schiliro, Marco Cannas, et al. "Vertical Current Transport in Monolayer MoS<sub>2</sub> Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoO<sub>x</sub> Films." Solid State Phenomena 362 (August 27, 2024): 7–12. http://dx.doi.org/10.4028/p-dind9n.

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In this paper, we report on the growth of highly uniform MoS2 films, mostly consisting of monolayers, on SiC surfaces with different doping levels (n- SiC epitaxy, ~1016 cm-3, and n+ SiC substrate, ~1019 cm-3) by sulfurization of a pre-deposited ultra-thin MoOx films. MoS2 layers are lowly strained (~0.12% tensile strain) and highly p-type doped (<Nh>≈4×1019 cm−3), due to MoO3 residues still present after the sulfurization process. Nanoscale resolution I-V analyses by conductive atomic force microscopy (C-AFM) show a strongly rectifying behavior for MoS2 junction with n- SiC, whereas the

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14

Dalui, Amit, Mrityunjay Pandey, Piyush Kanti Sarkar, et al. "Realization of Diverse Waveform Converters from a Single Nanoscale Lateral p–n Junction Cu2S–CdS Heterostructure." ACS Applied Materials & Interfaces 11, no. 12 (2019): 11749–54. http://dx.doi.org/10.1021/acsami.8b22131.

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15

Bae, Jinho, Yong ha Choi та Jihyun Kim. "Ultrawide-Bandgap Nanoscale p-n Junction Field Effect Transistors of GaN / β-Ga2O3 for High Power Operation". ECS Meeting Abstracts MA2020-01, № 23 (2020): 1330. http://dx.doi.org/10.1149/ma2020-01231330mtgabs.

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Park, Cheol-Joon, Yong-baek Lee, Sumin Jeon, Jeongyong Kim, Kwang-Sup Lee, and Jinsoo Joo. "Nanoscale optoelectronic properties of organic p–n junction P3HT/PCBM nanoparticles hybridized with CdSe/ZnS quantum dots." Synthetic Metals 193 (July 2014): 17–22. http://dx.doi.org/10.1016/j.synthmet.2014.03.023.

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17

Yoshida, Shoji, Yuya Kanitani, Ryuji Oshima, Yoshitaka Okada, Osamu Takeuchi, and Hidemi Shigekawa. "Nanoscale Mapping of Built-in Potential in GaAs p–n Junction Using Light-Modulated Scanning Tunneling Microscopy." Japanese Journal of Applied Physics 47, no. 7 (2008): 6117–20. http://dx.doi.org/10.1143/jjap.47.6117.

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18

Prucnal, Slawomir, Yonder Berencén, Mao Wang, et al. "Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy." Journal of Applied Physics 125, no. 24 (2019): 245703. http://dx.doi.org/10.1063/1.5080289.

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19

Lo, V. L., K. L. Pey, W. T. Lim, D. S. Ang, and C. H. Tung. "Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown." IEEE Transactions on Electron Devices 53, no. 11 (2006): 2786–91. http://dx.doi.org/10.1109/ted.2006.884074.

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20

Rajabi, Mehran, Mina Amirmazlaghani, and Farshid Raissi. "Graphene-Based Bipolar Junction Transistor." ECS Journal of Solid State Science and Technology 10, no. 11 (2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.

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Graphene was considered likely to revolutionize the electronics industry. This expectation has not yet been fulfilled, mainly due to the non-ideal characteristics of graphene-based transistors. Here, we propose a novel graphene-based structure as a graphene-based bipolar junction transistor (G-BJT), a nanoscale transistor which has the ideal characteristics of the common BJT transistor. In this device, N-P-N regions are formed in the graphene channel by applying voltages to the three gates. The carrier concentrations, energy band diagrams, and current-voltage curves are measured and presented.

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21

Aldalbahi, Ali, Zhen-Bo Wang, Tansir Ahamad, Saad M. Alshehri, and Peter X. Feng. "Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p - n Junctions with Enhanced Photoelectric Performance." International Journal of Photoenergy 2021 (August 13, 2021): 1–8. http://dx.doi.org/10.1155/2021/1884293.

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Both p - n and n - p heterojunctions of ZnO-MoS2 have been fabricated in order to understand the performance of electron and hole transport properties in solar cells and a self-powered photodetector system. Atomically thin 2-dimensional (2D) MoS2 was prepared by using a spin coating method with controlled process times, whereas ZnO nanowires were prepared by using a plasma sputtering deposition technique. The nanoscale morphologies, composites, and photoelectric properties of nanocomposites were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman

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22

Li, Yanshu, Andrei Sergeev, Nizami Vagidov, Vladimir Mitin, and Kimberly Sablon. "Quantum Dot Solar Cells with Nanoscale Barriers Around Dots: Experiment and Two-Diode Model Analysis." International Journal of High Speed Electronics and Systems 24, no. 01n02 (2015): 1520005. http://dx.doi.org/10.1142/s0129156415200050.

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Incorporation of quantum dots into the p-n junction of the photovoltaic device provides numerous possibilities for nanoscale control of photoelectron processes via engineering the band structure and nanoscale potential profile. The band structure is determined by the size and shape of quantum dots and width of the wetting layer. The potential profile is formed by selective doping, which leads to the built-in dot charge. To study the effects of the band structure and nanoscale potential barriers on the photovoltaic performance we fabricated and investigated 3-μm base GaAs devices with various I

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23

Struckman, Heather, Amara Greer-Short, Stephen Baine, et al. "The Nanoscale Basis of Atrial Fibrillation: Functional Impact of Disrupting NaV1.5-rich Intercalated Disk Nanodomains." Microscopy and Microanalysis 26, S2 (2020): 832. http://dx.doi.org/10.1017/s1431927620016001.

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Background:Atrial fibrillation (AF), which is characterized by chaotic patterns of electrical activation of the atria, affects over 4 million people in the US alone. We previously identified nanoscale structural abnormalities in the hearts of AF patients. Specifically, they displayed swelling of gap junction (GJ) –adjacent perinexi, specialized nanodomains rich in cardiac sodium channels (NaV1.5) and located within intercalated disks (IDs; sites of electromechanical contact between adjacent cells). However, the functional consequences of these nanoscale structural changes remain unclear.Object

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24

Sone, Naoki, Daiki Jinno, Yoshiya Miyamoto, et al. "Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire." Japanese Journal of Applied Physics 61, no. 1 (2021): 012002. http://dx.doi.org/10.35848/1347-4065/ac3728.

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Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operati

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25

Yoo, Il-han, Shankara S. Kalanur, and Hyungtak Seo. "A nanoscale p–n junction photoelectrode consisting of an NiOx layer on a TiO2/CdS nanorod core-shell structure for highly efficient solar water splitting." Applied Catalysis B: Environmental 250 (August 2019): 200–212. http://dx.doi.org/10.1016/j.apcatb.2019.02.063.

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26

Han, Junghyup, and Youn Sang Kim. "Creation and Control of Lateral Electronic Junction in Ultrathin Semiconductor through the Interfacial Treatment Using Self-Assembled Monolayer." ECS Meeting Abstracts MA2024-02, no. 20 (2024): 1831. https://doi.org/10.1149/ma2024-02201831mtgabs.

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Interface engineering is essential to enhance the performance and stability of layered devices by resolving the interfacial issues, which dominantly affect the operation of the device. Unlike the interface, the adjoining bulk semiconductor is slightly affected by the interfacial treatment, and it is generally considered negligible in the classical semiconductor device theory. On the other hand, this interfacial effect is no longer trivial at the devices composing ultrathin layers, which are crucial for developing next-generation electronics with high integrity and low power consumption. Even t

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Sambur, Justin. "(Invited) Molecular Reaction Imaging of Charge Transport in MoS₂ Nanoflake Photoelectrodes." ECS Meeting Abstracts MA2023-01, no. 44 (2023): 2423. http://dx.doi.org/10.1149/ma2023-01442423mtgabs.

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Transition metal dichalcogenides (TMD) such as WSe2 and MoS2 are highly efficient and stable light absorbers in TMD∣I−,I3 −∣Pt liquid junction solar cells. It is generally accepted that TMD crystals with a large fraction of exposed edge sites exhibit lower power conversion efficiencies (PCEs) than apparently smooth crystals. However, one open question is why does the PCE vary significantly from one crystal to another? Answering this critical question could lead to robust syntheses for high quality and uniform TMD samples. In this work, we apply nanoscale photoelectrochemical microscopy techniq

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Pisarenko, Ivan, and Eugeny Ryndin. "Photodetector with Controlled Relocation of Carrier Density Peaks: Concept and Numerical Simulation." Photonics 7, no. 1 (2020): 21. http://dx.doi.org/10.3390/photonics7010021.

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Modern electronics faces the degradation of metal interconnection performance in integrated circuits with nanoscale feature dimensions of transistors. The application of constructively and technologically integrated optical links instead of metal wires is a promising way of the problem solution. Previously, we proposed the advanced design of an on-chip injection laser with an AIIIBV nanoheterostructure, and a functionally integrated optical modulator. To implement the efficient laser-modulator-based optical interconnections, technologically compatible photodetectors with subpicosecond response

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Choi, Yohan, Han-Sol Jun, Ho-Jung Kwon, et al. "Skyrmion Based Synaptic Device Having Perpendicular Magnetic-Tunnel-Junction Spin-Valve Sensor." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1529. http://dx.doi.org/10.1149/ma2023-02301529mtgabs.

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Perpendicular spin-transfer-torque magnetic random access memory (p-STT MRAM) has been reported as an application of binary neural networks (BNN) [1]. In addition, magnetic skyrmions have been reported as information carriers for neuromorphic devices due to their small nanoscale diameter, topological stability, and complete linearity [2-3]. A previous study has demonstrated the synaptic characteristics of skyrmion based synapses using a Hall bar measurement [4]. However, skyrmion based synapses using the Hall bar measurement were not able to detect electrically a synaptic behavior. Thus, for t

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Pal, Subhajit, N. V. Sarath, K. Shanmuga Priya, and P. Murugavel. "A review on ferroelectric systems for next generation photovoltaic applications." Journal of Physics D: Applied Physics 55, no. 28 (2022): 283001. http://dx.doi.org/10.1088/1361-6463/ac52f4.

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Abstract Ferroelectric (FE) materials, which are non-centrosymmetric crystal systems with switchable polarization characterization, are known to show multifunctional application potential in various fields. Among them, the FE photovoltaic (PV) phenomenon, which has been known for several decades, is finding renewed interest recently due to its anomalous PV characteristics along with the reported efficiency exceeding the Shockley–Queisser limit in the nanoscale region. Importantly, the mechanism involved in the FE–PV effect is particularly different from the conventional PV effect exhibited by

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31

Brabec, Christoph J., Thomas Nann, and Sean E. Shaheen. "Nanostructured p–n Junctions for Printable Photovoltaics." MRS Bulletin 29, no. 1 (2004): 43–47. http://dx.doi.org/10.1557/mrs2004.16.

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AbstractBy controlling the morphology of organic and inorganic semiconductors on a molecular scale, nanoscale p–n junctions can be generated in a bulk composite. Such a composite is typically called a bulk heterojunction composite, which can be considered as one virtual semiconductor combining the electrical and optical properties of the individual components. Solar cells are one attractive application for bulk heterojunction composites. Conjugated polymers or oligomers are the favorite p-type semiconducting class for these composites, while for the n-type semiconductor, inorganic nanoparticle

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Choi, Yohan, Han-Sol Jun, So-Hyun Lee, et al. "Multi-Level Synaptic Device Having Perpendicular Magnetic-Tunnel-Junction Spin-Valve Sensor Via Skyrmion Generated By Nano-Scale Current Emitter." ECS Meeting Abstracts MA2024-01, no. 30 (2024): 1512. http://dx.doi.org/10.1149/ma2024-01301512mtgabs.

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Recently, with the expansion of deep learning-based artificial intelligence into various fields, high integration density and recognition accuracy are essentially necessary for neuromorphic devices. In particular, skyrmion-based artificial synaptic devices have been actively researched due to complete linearity, topological stability, and small nanoscale size. This device can emulate the synaptic plasticity (i.e., long-term potentiation (LTP) and long-term depression (LTD)) depending on the number of generated skyrmions. Magnetic skyrmions have been characterized by various methods such as per

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Kaestner, B., D. A. Williams, and D. G. Hasko. "Nanoscale lateral light emitting p–n junctions in AlGaAs/GaAs." Microelectronic Engineering 67-68 (June 2003): 797–802. http://dx.doi.org/10.1016/s0167-9317(03)00141-2.

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WANG, XUN. "LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON." Modern Physics Letters B 08, no. 02 (1994): 69–92. http://dx.doi.org/10.1142/s021798499400008x.

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In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boilin

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Zhang, Xiwei, Zhenjie Tang, Dan Hu, Dan Meng, and Shuanwen Jia. "Nanoscale p–n junctions based on p-type ZnSe nanowires and their optoelectronic applications." Materials Letters 168 (April 2016): 121–24. http://dx.doi.org/10.1016/j.matlet.2016.01.044.

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36

Chandra, Ankita, Supratick Giri, Biswajit Das, Shrabani Ghosh, Sourav Sarkar, and K. K. Chattopadhyay. "NIR photodetector based on p-silicon nanowires/n-cadmium sulfide nanoscale junctions." Applied Surface Science 548 (May 2021): 149256. http://dx.doi.org/10.1016/j.apsusc.2021.149256.

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Thompson, Eric S., Hiro Gangi, Jongil Hwang, and Thomas J. Kempa. "Parallel Synthesis of Nanoscale Si Superlattices through Eutectic Confinement for Semiconductor p–n Junctions." ACS Applied Nano Materials 4, no. 2 (2021): 985–89. http://dx.doi.org/10.1021/acsanm.0c03335.

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Hong, T., T. Chen, G. Z. Ran, et al. "Enhanced electroluminescence from nanoscale silicon p+–n junctions made with an anodic aluminum oxide pattern." Nanotechnology 21, no. 2 (2009): 025301. http://dx.doi.org/10.1088/0957-4484/21/2/025301.

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Yu, Lili, Xin Yan, Hong Li, et al. "Negative rectification and negative differential resistance in nanoscale single-walled carbon nanotube p-n junctions." Theoretical Chemistry Accounts 130, no. 2-3 (2011): 353–59. http://dx.doi.org/10.1007/s00214-011-0990-0.

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Peretzki, Patrick, Benedikt Ifland, Christian Jooss, and Michael Seibt. "Low energy scanning transmission electron beam induced current for nanoscale characterization of p-n junctions." physica status solidi (RRL) - Rapid Research Letters 11, no. 1 (2016): 1600358. http://dx.doi.org/10.1002/pssr.201600358.

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Kwon, Hyunah, Jun-Sik Yoon, Yuna Lee, Dong Yeong Kim, Chang-Ki Baek, and Jong Kyu Kim. "An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors." Sensors and Actuators B: Chemical 255 (February 2018): 1663–70. http://dx.doi.org/10.1016/j.snb.2017.08.173.

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Liang, Yuan-Chang, and Yu-Wei Hsu. "Design of thin-film configuration of SnO₂–Ag₂O composites for NO₂ gas-sensing applications." Nanotechnology Reviews 11, no. 1 (2022): 1842–53. http://dx.doi.org/10.1515/ntrev-2022-0111.

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Abstract In this study, a two-layered thin-film structure consisting of a dispersed nanoscaled Ag2O phase and SnO2 layer (SA) and a mono-composite film layer (CSA) consisting of a nanoscale Ag2O phase in the SnO2 matrix are designed and fabricated for NO2 gas sensor applications. Two-layered and mono-layered SnO2–Ag2O composite thin films were synthesized using two-step SnO2 and Ag2O sputtering processes and Ag2O/SnO2 co-sputtering approach, respectively. In NO2 gas-sensing measurement results, both SA and CSA thin films that functionalized with an appropriate Ag2O content exhibit enhanced gas

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Lee, Yao-Jen, Shu-Wei Chang, Wen-Hsi Lee, and Yeong-Her Wang. "(Invited, Digital Presentation) Heterogeneous IGZO/Si CFET Monolithic 3D Integration." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1289. http://dx.doi.org/10.1149/ma2022-02351289mtgabs.

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Monolithic 3D-IC is one of the solutions to relieve Moore’s law with vertically integrating circuits for sub-1nm technology nodes. Therefore, thin-film transistors (TFTs) play an important role in this trend because of their low fabrication temperature to realize back-end circuits. On the other hand, 3D integrating filter, duplexer, switch, and so on is necessary as antennas array requirements increase in 5G or beyond. Consequently, it is foreseeable to adopt TFTs to implement radio frequency (RF) devices. Fig. 1 shows the schematic ideal 3D SoC for sub-1nm technology. Our previous research tr

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Zhang, Yong, Guangliang Hu, Maogang Gong, et al. "Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions." Advanced Materials Interfaces 6, no. 1 (2018): 1801380. http://dx.doi.org/10.1002/admi.201801380.

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Bie, Ya-Qing, Zhi-Min Liao, Hong-Zhou Zhang, et al. "Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p-n Junctions." Advanced Materials 23, no. 5 (2010): 649–53. http://dx.doi.org/10.1002/adma.201003156.

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Yang, Qian, Yu Zhang, Zhong-Qiu Fu, Yulong Chen, Zengfeng Di, and Lin He. "Creating custom-designed patterns of nanoscale graphene quantum dots." 2D Materials 9, no. 2 (2022): 021002. http://dx.doi.org/10.1088/2053-1583/ac4e71.

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Abstract Graphene quantum dots (GQDs) have attracted extensive attention over the years because of their importance both in fundamental science and potential applications. However, fabricating patterns of the GQDs is still of great challenge in experiment. Here, we demonstrate a technique to create patterned nanometer-sized GQDs with nanoscale precision in their sites. By applying a voltage pulse from a scanning tunneling microscopy (STM) tip, we successfully create stationary nanoscale circular p–n junctions, i.e. GQDs, in a continuous graphene sheet on hydrogen terminated germanium (110) sur

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Abdul Rahman, I., M. T. M. Ayob, and S. Radiman. "Enhanced Photocatalytic Performance of NiO-Decorated ZnO Nanowhiskers for Methylene Blue Degradation." Journal of Nanotechnology 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/212694.

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ZnO nanowhiskers were used for photodecomposition of methylene blue in aqueous solution under UV irradiation. The rate of methylene blue degradation increased linearly with time of UV irradiation. 54% of degradation rate was observed when the ZnO nanowhiskers were used as photocatalysts for methylene blue degradation for 80 min under UV irradiation. The decoration of p-type NiO nanoparticles on n-type ZnO nanowhiskers significantly enhanced photocatalytic activity and reached 72% degradation rate of methylene blue by using the same method. NiO-decorated ZnO was recycled for second test and sho

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Udhiarto, Arief, Daniel Moraru, Sri Purwiyanti, et al. "Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions." Applied Physics Express 5, no. 11 (2012): 112201. http://dx.doi.org/10.1143/apex.5.112201.

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Kono, Junichiro. "(Invited, Digital Presentation) Macroscopically Aligned Carbon Nanotubes for Photonics, Electronics, and Thermoelectrics." ECS Meeting Abstracts MA2022-01, no. 10 (2022): 775. http://dx.doi.org/10.1149/ma2022-0110775mtgabs.

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The remarkable flexibility, stable chemical structure, and extraordinary thermal, electrical, and optical properties of carbon nanotubes (CNTs) are promising for a variety of applications in flexible and/or high-temperature electronics, optoelectronics, and thermoelectrics, including wearables, refractory photonics, and waste heat harvesting [1]. However, the long-standing goal in the preparation of CNT ensembles is how to maintain the extraordinary properties of individual CNTs on a macroscopic scale. The polydispersity and randomness remain two main challenges. Here, we will discuss differen

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Peretzki, Patrick, Benedikt Ifland, Christian Jooss, and Michael Seibt. "Back Cover: Low energy scanning transmission electron beam induced current for nanoscale characterization of p-n junctions (Phys. Status Solidi RRL 1/2017)." physica status solidi (RRL) - Rapid Research Letters 11, no. 1 (2017): 1770303. http://dx.doi.org/10.1002/pssr.201770303.

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