Relevant bibliographies by topics / Nanosheet Transistors

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Nanosheet Transistors'

Author: Grafiati
Published: 5 June 2025
Last updated: 2 August 2025

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Journal articles on the topic "Nanosheet Transistors"

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Agha, Firas, Yasir Naif, and Mohammed Shakib. "Review of Nanosheet Transistors Technology." Tikrit Journal of Engineering Sciences 28, no. 1 (2021): 40–48. http://dx.doi.org/10.25130/tjes.28.1.05.

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Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this r
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Yang, Jingwen, Kun Chen, Dawei Wang, et al. "Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device." Micromachines 14, no. 3 (2023): 611. http://dx.doi.org/10.3390/mi14030611.

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In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. The experiment of channel release showed that the stress caused serious deformation to suspended nanosheets. With the guidance of the experiment result, based on simulation studies using the COMSOL Multiphysics and Sentaurus tools, it is confirmed that the stress applied on the channel from source/drain plays an important role in nanosheet deformation durin
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Cerdeira, A., M. Estrada, and M. A. Pavanello. "On the compact modelling of Si nanowire and Si nanosheet MOSFETs." Semiconductor Science and Technology 37, no. 2 (2022): 025014. http://dx.doi.org/10.1088/1361-6641/ac45c0.

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Abstract In this paper, three-dimensional technology computer aided design simulations are used to show that the electron concentration, current density, and electric field distribution from the interface at the lateral channels and from the top channel to the centre of the silicon wire, in nanowire and nanosheet structures, are practically same. This characteristic makes it possible to consider that the total channel width for these structures is equal to the perimeter of the transistor sheet, allowing to extend of the application of the symmetric doped double-gate model (SDDGM) model to nano
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Rajat, Suvra Das. "A Systematic Literature Review on Advanced FinFET Technology and Beyond: Exploring Novel Transistor Architectures and Assessing their Potential for Future Semiconductor Applications." European Journal of Advances in Engineering and Technology 9, no. 12 (2022): 122–30. https://doi.org/10.5281/zenodo.10901221.

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<strong>ABSTRACT</strong> In the ever-progressing field of semiconductor technology, the pursuit of heightened performance, energy efficiency, and scalability has prompted a shift beyond the conventional FinFETs. This study explores advanced FinFET technology and extends its focus to emerging transistor architectures, namely nanosheet transistors and Tunnel FETs, evaluating their potential impact on semiconductor applications. The analysis commences with an in-depth examination of FinFETs, acknowledging their pivotal role in the past decade but recognizing their limitations as semiconductor te
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Endo, Kazuhiko. "(Invited) Technology Scaling from Bulk to Fin and Nano-Sheet Transistors." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1519. http://dx.doi.org/10.1149/ma2023-02301519mtgabs.

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In recent years, scaling of semiconductor device has progressed, leading to the development of advanced semiconductor devices with code names of below 10-nm. Various new materials and technologies have been introduced to accompany the miniaturization of semiconductor devices. First, the resistivity of aluminum became higher due to miniaturization, and aluminum was replaced by copper as the wiring metal. Then, to increase the gate capacitance of MOS field-effect transistors, the thickness of the gate insulating film (SiO2) was reduced to the limit, and as a result, gate leakage current could no
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Mahdaoui, Dorra, Chika Hirata, Kahori Nagaoka, et al. "Ambipolar to Unipolar Conversion in C70/Ferrocene Nanosheet Field-Effect Transistors." Nanomaterials 13, no. 17 (2023): 2469. http://dx.doi.org/10.3390/nano13172469.

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Organic cocrystals, which are assembled by noncovalent intermolecular interactions, have garnered intense interest due to their remarkable chemicophysical properties and practical applications. One notable feature, namely, the charge transfer (CT) interactions within the cocrystals, not only facilitates the formation of an ordered supramolecular network but also endows them with desirable semiconductor characteristics. Here, we present the intriguing ambipolar CT properties exhibited by nanosheets composed of single cocrystals of C70/ferrocene (C70/Fc). When heated to 150 °C, the initially amb
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Szuromi, Phil. "Printing nanosheet-network transistors." Science 356, no. 6333 (2017): 37.12–39. http://dx.doi.org/10.1126/science.356.6333.37-l.

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Agopian, Paula, Joao Antonio Martino, Rita Rooyackers, Eddy Simoen, and Cor Claeys. "(Invited) Basic Analog Blocks Using Advanced Devices." ECS Meeting Abstracts MA2025-01, no. 36 (2025): 1710. https://doi.org/10.1149/ma2025-01361710mtgabs.

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The evolution of semiconductor devices has driven a transformative technological revolution, fundamentally reshaping how we work, live, and interact with the world. This revolution was only made possible thanks to the integration of transistors and other semiconductor components into integrated circuits, which are now present in all modern equipment around us. In this work, we revisit the evolution of transistors, focusing on advances in their architecture, transport mechanisms, and the materials used in their fabrication. The discussion includes an in-depth analysis of the electrical characte
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Chen, Zhuo, Huilong Zhu, Guilei Wang, et al. "High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale." Nanomaterials 13, no. 12 (2023): 1867. http://dx.doi.org/10.3390/nano13121867.

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At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices in the three-dimensional direction has excellent potential for scaling. However, existing vertical devices face two technical challenges: “self-alignment of gate and channel” and “precise gate length control”. A recrystallization-based vertical C-shaped-channel nanosheet field effect transistor (RC-VCNFET) was proposed, and related process modules
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Chen, Zhuo, Huilong Zhu, Guilei Wang, et al. "Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing." Nanomaterials 13, no. 11 (2023): 1786. http://dx.doi.org/10.3390/nano13111786.

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Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges. For example, the gate length cannot be precisely controlled, and the gate and the source/drain of the device cannot be aligned. Recrystallization-based vertical C-shaped-channel nanosheet field-effect transistors (RC-VCNFETs) were fabricated. The critical process modules of the RC-VCNFETs were developed as well. The RC-VCNFET with a self-aligned
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Dissertations / Theses on the topic "Nanosheet Transistors"

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Gaben, Loic. "Fabrication et caractérisation de transistors MOS à base de nanofils de silicium empilés et à grille enrobante réalisés par approche Gate-Last pour les noeuds technologiques sub-7 nm." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT095/document.

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La diminution de la taille des transistors actuellement utilisés en microélectronique ainsi que l’augmentation de leurs performances demeure encore au centre de toutes les attentions. Cette thèse propose d’étudier et de fabriquer des transistors à base de nanofils empilés. Cette architecture avec des grilles enrobantes est l’ultime solution pour concentrer toujours plus de courant électrique dans un encombrement minimal. Les simulations ont par ailleurs révélé le potentiel des nanofeuillets de silicium qui permettent à la fois d’optimiser l’espace occupé tout en proposant des performances supé
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Yang, Yi-Yun, and 楊怡芸. "Study of Vertically Stacked Nanosheet With Multi- Gate Field-Effect-Transistors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/jfhv3s.

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碩士<br>國立清華大學<br>工程與系統科學系<br>105<br>In recreant years, the electronic products pursue not only the higher speed and better performance, but also less power consumption and lower cost. The Semiconductor ICs manufacturing companies still follow Moore's law to scaling. In addition to processing technology feasibility limits, it is important to develop a target that suffices high performance and scalability. Information processing technology is driving the semiconductor into a broadening spectrum of new applications according to 2015 ITRS 2.0 report. A significant part of the research to further im
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Peng, Kang-Hui, and 彭康烠. "Vertically Stacked Nanosheet Junctionless With Gate All Around Field-Effect-Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/mz2na2.

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YU, JIA-JYUN, and 余家鈞. "Study of Stacked Nanosheet Channels with Multi-Gate Junctionless Field-Effect-Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/37e9rr.

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碩士<br>國立聯合大學<br>電子工程學系碩士班<br>106<br>With the continuous miniaturization of electronic components in the semiconductor companies, in addition to processing technology feasibility limits, it is important to develop a target that suffices high performance and scalability. Conventional inversion-mode Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) face a lot of challenges such as Short channel effects (SCEs), device process technologies, and physical limits in the scaling process. JL-FET is a novel device, which has heavily doping channel with the same type to that of source and drain
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Chang, Chih-Yao, and 張智堯. "Investigation on Vertically Stacked Gate-All-Around Nanosheet Poly-Si Junctionless CMOS Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/459ufp.

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碩士<br>國立交通大學<br>電子物理系所<br>107<br>The GAA Nanosheet Poly-Si JL FETs have been successfully fabricated by only two simple steps that the dry etching process follows by wet etching. The dimension of gate stack of WM = 40 nm with Hp,1 × Wp,1 of top layer poly-Si is 8 nm × 30 nm, and Weff is 76 nm. Then, we comprehensively discuss the electrical characteristic of the GAA Nanosheet Poly-Si JL FETs with two different type MOS transistors, gate length and channel width. Furthermore, vertically multiple channel architecture devices are also have been successfully fabricated by the same process and beha
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CHEN, YU-FANG, and 陳育芳. "Comparison of Junctionless and Conventional Field Effect Transistors Based on Stacked Nanosheet Channels Structure." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/8hbq3f.

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碩士<br>國立聯合大學<br>電子工程學系碩士班<br>107<br>Under the rapid development of semiconductors, it faces the problem of shrinking component size. It will be a major challenge that how to suppress the short channel effects(SCEs) to reduce leakage current, and maintain excellent device performance. In this thesis, we study the junctionless(JL-FET) and conventional field effect transistors(IM-FET) based on stacked nanosheet channels structure, including the component process and the analysis of the electrical characteristics. In the structure of the stacked channel, we used the oxidation trimmed method to f
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Chen, Yi-Fan, and 陳羿帆. "Study of Multi-Stacking Hybrid P/N/O/P Nanosheet Layers Junctionless Field-Effect Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/7ccszr.

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Liu, Li-Chun, and 劉俐均. "A Study on Nickel-Seed Induced Laterally Crystallized Low Temperature Poly-Silicon Nanosheet Thin-Film Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/znfvha.

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碩士<br>國立交通大學<br>電子物理系所<br>107<br>Low temperature poly-silicon thin-film transistors (LTPS TFTs) has higher carrier mobility than amorphous silicon (α-Si). Its low process temperature and CMOS process compatibility makes it suitable for three dimensional integrated circuits (3D-ICs). Conventionally, solid phase crystallization (SPC) is used to transform α-Si into poly-Si with 600 °C annealing. However, its grains have different sizes; the shape and position of the grains are randomly distributed; also, the lower process temperature are still in demand. Metal (Ni)-induced lateral crystallization
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(9167615), Orthi Sikder. "Influence of Size and Interface Effects of Silicon Nanowire and Nanosheet for Ultra-Scaled Next Generation Transistors." Thesis, 2020.

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<div>In this work, we investigate the trade-off between scalability and reliability for next generation logic-transistors i.e. Gate-All-Around (GAA)-FET, Multi-Bridge-Channel (MBC)-FET. First, we analyze the electronic properties (i.e. bandgap and</div><div>quantum conductance) of ultra-thin silicon (Si) channel i.e. nano-wire and nano-sheet based on first principle simulation. In addition, we study the influence of interface</div><div>states (or dangling bonds) at Si-SiO<sub>2</sub> interface. Second, we investigate the impact of bandgap change and interface states on GAA-FETs and MBC-FETs ch
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Sikder, Orthi. "Influence of Size and Interface Effects of Silicon Nanowire and Nanosheet for Ultra-Scaled Next Generation Transistors." Thesis, 2020. http://hdl.handle.net/1805/23570.

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Indiana University-Purdue University Indianapolis (IUPUI)<br>In this work, we investigate the trade-off between scalability and reliability for next generation logic-transistors i.e. Gate-All-Around (GAA)-FET, Multi-Bridge-Channel (MBC)-FET. First, we analyze the electronic properties (i.e. bandgap and quantum conductance) of ultra-thin silicon (Si) channel i.e. nano-wire and nano-sheet based on first principle simulation. In addition, we study the influence of interface states (or dangling bonds) at Si-SiO2 interface. Second, we investigate the impact of bandgap change and interface states o
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Books on the topic "Nanosheet Transistors"

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Bergendahl, Marc A. Vertically Aligned Nanowire Channels with Source/drain Interconnects for Nanosheet Transistors: United States Patent 9985138. Independently Published, 2020.

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Book chapters on the topic "Nanosheet Transistors"

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Mohapatra, Eleena. "Nanosheet Transistors." In Fabless Semiconductor Manufacturing. Jenny Stanford Publishing, 2022. http://dx.doi.org/10.1201/9781003314974-5.

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Singh, Anushka, and Archana Pandey. "Gate-All-Around Nanosheet FET Device Simulation Methodology Using a Sentaurus TCAD." In Advanced Field-Effect Transistors. CRC Press, 2023. http://dx.doi.org/10.1201/9781003393542-11.

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Dash, T. P., E. Mohapatra, Sanghamitra Das, S. Choudhury, and C. K. Maiti. "Toward Ultimate Scaling: From FinFETs to Nanosheet Transistors." In Lecture Notes in Networks and Systems. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-8218-9_19.

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Kumar, Aruru Sai, V. Bharath Sreenivasulu, Srinivas Talasila, Venkat Jukuru, Thanvitha Valluru, and D. P. S. S. S. K. Vamsi. "Principle Study of Nanosheet Field-Effect Transistors with Transition Metal Dichalcogenide Channel Materials." In Lecture Notes in Networks and Systems. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-97-9926-8_52.

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Valasa, Sresta, Shubham Tayal, and Laxman Raju Thoutam. "Performance Analysis of Temperature on Wireless Performance for Vertically Stacked Junctionless Nanosheet Field Effect Transistor." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0055-8_2.

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Arun, A. V., M. Sajeesh, Jobymol Jacob, and J. Ajayan. "An overview of DC/RF performance of nanosheet field effect transistor for future low-power applications." In Advanced MOS Devices and their Circuit Applications. CRC Press, 2023. http://dx.doi.org/10.1201/9781032670270-1.

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"Displacement damage physics in gate-all-around nanosheet field effect transistors." In Book of Abstracts - RAD 2025 Conference. RAD Centre, Niš, Serbia, 2025. https://doi.org/10.21175/rad.abstr.book.2025.1.3.

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Introduction All major integrated device manufacturers have introduced Gate All Around Nanosheet Field Effect Transistors (GAA NSFETs) as the next generation technology for CMOS applications. The design of GAA NSFETs is similar to Silicon-On-Insulator (SOI) technology, which is recognized for its radiation-hardness [1]. The GAA NSFET architecture features a channel that is isolated from the substrate, potentially leading to the development of radiation-hard consumer electronics. However, GAA NSFETs are being targeted for sub 3 nm logic technology nodes, which are significantly smaller when com
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Topno, Nawal, Raghunandan Swain, Dinesh Kumar Dash, and M. Suresh. "Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application." In Nanoelectronic Devices and Applications. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010015.

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Due to the shortening of channel length in accordance with Moore’s law, short channel effects degrade transistor performance. This chapter explains the emerging nanosheet fin field effect transistor (FinFET) design and operation through technology computer-aided design (TCAD) tool-based design and simulation. A 10 nm node Ge-channel nanosheet FinFET is designed and simulated by incorporating quantum transport models in both DC and AC environments. Corresponding short channel effect (SCE) parameters are obtained and compared with Si-channel nanosheet FinFETs. Further, device feasibility for low
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Munir, Rabia, Junaid Ali, Saira Arif, and Shahid Aziz. "Harnessing Graphene-Based Nanocomposites for Multifunctional Applications." In 2D Materials: Chemistry and Applications (Part 1). BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815223675124010005.

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Due to the distinctive 2D lattice structure, graphene, and its derivatives have received much interest in recent years to advance technology into the era of stretchable, bendable, and flexible technology. Graphene has advantageous features that create diversely effective devices when combined with other materials to create composites. Compared to graphene, its composites exhibit improved features such as excellent mechanical strength, tunable electrical and thermal conductivity, and optical properties. Graphene composites utilize graphene fillers, films, or nanosheets with several other organi
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Conference papers on the topic "Nanosheet Transistors"

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Benfdila, Arezki, Mohammed Djouder, and Ahcene Lakhlef. "Towards Nanosheet Field Effect Transistors." In 2024 IEEE 14th International Conference Nanomaterials: Applications & Properties (NAP). IEEE, 2024. http://dx.doi.org/10.1109/nap62956.2024.10739750.

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Kobayashi, Masaharu, Kaito Hikake, Xingyu Huang, et al. "On the Scalability of Nanosheet Oxide Semiconductor Transistors." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040950.

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Dutta, Tapas, Fikru Adamu-Lema, Nikolas Xeni, et al. "Predictive Simulation of Nanosheet Transistors Including the Impact of Access Resistance." In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2024. http://dx.doi.org/10.1109/sispad62626.2024.10733048.

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Robbes, A.-S., O. Dulac, K. Soulard, et al. "Etching Monitoring of Advanced Forksheet Devices Using AKONIS SIMS Tool." In ISTFA 2024. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0175.

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Abstract Imec has developed a fully-functional integrated forksheet field-effect transistors (FETs), which is the most promising architecture for advancing beyond the GAA (Gate-All-Around) nanosheet generation for scaling and performance improvements past the 2nm technology node. From a manufacturing perspective, forksheet devices are extremely complex to process and requires accurate and sensitive analytical instruments like the AKONIS SIMS tool.
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Sun, Zixuan, Zirui Wang, Runsheng Wang, and Ru Huang. "Investigation of Sheet Width Dependence on Hot Carrier Degradation in GAA Nanosheet Transistors." In 2024 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2024. http://dx.doi.org/10.1109/snw63608.2024.10639242.

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Tu, Ruei-Cheng, Chia-Yo Kuo, and Jyi-Tsong Lin. "Comparison of Nanosheet and Fin Integration in Stacked Induced Tunnel Field-Effect Transistors." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10831902.

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Aggarwal, Akansha, Gagan, Devender Kumar Soni, and Himanshu Marothya. "Impact of Doping Profile Engineering for Enhanced Performance in Nanosheet Field Effect Transistors." In 2025 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI). IEEE, 2025. https://doi.org/10.1109/iatmsi64286.2025.10985508.

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Okada, Kenji, Miaomiao Wang, Yasuhiro Isobe, et al. "FEOL Reliability Assessment of 2 nm Gate-All-Around Nanosheet Transistors with both Isolated and non-Isolated Substrates." In 2024 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2024. https://doi.org/10.1109/iirw62856.2024.10947160.

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Eom, Seungjoon, Sanguk Lee, and Rock-Hyun Baek. "Categorization of Stacking Faults and Their Effects on I-V Characteristics in 2NM P-Type GAA Nanosheet Transistors." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11041126.

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Yeap, Geoffrey, S. S. Lin, H. L. Shang, et al. "2nm Platform Technology Featuring Energy-Efficient Nanosheet Transistors and Interconnects Co-Optimized with 3DIC for AI, HPC and Mobile SoC Applications." In 2024 IEEE International Electron Devices Meeting (IEDM). IEEE, 2024. https://doi.org/10.1109/iedm50854.2024.10873475.

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