Relevant bibliographies by topics / Nanowire formation

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Nanowire formation'

Author: Grafiati
Published: 4 June 2025
Last updated: 15 July 2025

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Journal articles on the topic "Nanowire formation"

1

Jeon, Seong Gi, Jae Yong Song, Ho Sun Shin, and Jin Yu. "Solid-State Formation of Intermetallic Compounds in Co-Sb Couple Nanowires." International Symposium on Microelectronics 2010, no. 1 (2010): 000093–97. http://dx.doi.org/10.4071/isom-2010-ta3-paper5.

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Nanointerconnection technologies have attracted much attention for the future electrical interconnection in electronic packaging. Nanowire interconnection needs to form the intermetallic compounds (IMCs) between the nanowires, in order to effectively reduce the contact resistances. In this study, the couple nanowires of Co and Sb elements were selected to investigate the IMC formation in one dimensional confinement. The Co and Sb nanowires were electrochemically deposited into the anodic aluminum oxide templates, in sequence, which had the pore diameters of about 30 and 60 nm, respectively. Results show that the CoSb phase is formed between Co nanowire and Sb nanowire after heat-treatment at 773 K. The IMC formation was ascribed to the dominant diffusion of Sb atoms toward the Co nanowire. The fast diffusion of Sb atoms toward the Co nanowire resulted in the formation of Kirkendall voids between the IMC and Sb nanowires.
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Xue, Cheng Shan, Zhi Hua Dong, Hui Zhao Zhuang, Haiyong Gao, Yi'an Liu, and Yu Xin Wu. "Formation of Single Crystal Nanowires of GaN on the Si Substrates." Materials Science Forum 475-479 (January 2005): 4175–78. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.4175.

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An extreme thin SiC buffer and Ga2O3 layer were deposited on silicon substrate sequentially with a r.f. magnetron sputtering system. Then the sample was annealed in the ambiance of ammonia at high temperature. Nanowires were found when the sample was tested with scanning electron microscopy (SEM). The composition of the nanowires is found to be GaN when the sample was tested with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). A nanowire was observed with transmission electron microscopy and it was even and uniform, with diameter of about 60nm. And the nanowire can be testified of wurtzite single crystal structure by electron diffraction (ED) analysis attached to the TEM. The high-resolution transmission electron microscopy (HRTEM) analysis to the nanowire indicates that the nanowire was single crystal with very good quality.
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Weidemann, Stefan, Maximilian Kockert, Dirk Wallacher, et al. "Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms." Journal of Nanomaterials 2015 (2015): 1–11. http://dx.doi.org/10.1155/2015/672305.

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Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi bulk=520 cm−1 →λSi nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.
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Morbec, J. M., and R. H. Miwa. "Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires." Journal of Nanotechnology 2011 (2011): 1–8. http://dx.doi.org/10.1155/2011/203423.

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Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide (SiC) nanowires. We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the [100] and [111] directions. The formation energies of these clusters were calculated as a function of the carbon concentration. We verified that the energetic stability of the carbon defects in SiC nanowires depends strongly on the composition of the nanowire surface: the energetically most favorable configuration in carbon-coated [100] SiC nanowire is not expected to occur in silicon-coated [100] SiC nanowire. The binding energies of some aggregates were also obtained, and they indicate that the formation of carbon clusters in SiC nanowires is energetically favored.
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Bikmeeva, Kamila R., and Alexey D. Bolshakov. "Diffusion-Induced Ordered Nanowire Growth: Mask Patterning Insights." Nanomaterials 14, no. 21 (2024): 1743. http://dx.doi.org/10.3390/nano14211743.

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Innovative methods for substrate patterning provide intriguing possibilities for the development of devices based on ordered arrays of semiconductor nanowires. Control over the nanostructures’ morphology in situ can be obtained via extensive theoretical studies of their formation. In this paper, we carry out an investigation of the ordered nanowires’ formation kinetics depending on the growth mask geometry. Diffusion equations for the growth species on both substrate and nanowire sidewalls depending on the spacing arrangement of the nanostructures and deposition rate are considered. The value of the pitch corresponding to the maximum diffusion flux from the substrate is obtained. The latter is assumed to be the optimum in terms of the nanowire elongation rate. Further study of the adatom kinetics demonstrates that the temporal dependence of a nanowire’s length is strongly affected by the ratio of the adatom’s diffusion length on the substrate and sidewalls, providing insights into the proper choice of a growth wafer. The developed model allows for customization of the growth protocols and estimation of the important diffusion parameters of the growth species.
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Rai, Rajesh K., and Chandan Srivastava. "Nonequilibrium Microstructures for Ag–Ni Nanowires." Microscopy and Microanalysis 21, no. 2 (2015): 491–97. http://dx.doi.org/10.1017/s1431927615000069.

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AbstractThis work illustrates that a variety of nanowire microstructures can be obtained either by controlling the nanowire formation kinetics or by suitable thermal processing of as-deposited nanowires with nonequilibrium metastable microstructure. In the present work, 200-nm diameter Ag–Ni nanowires with similar compositions, but with significantly different microstructures, were electrodeposited. A 15 mA deposition current produced nanowires in which Ag-rich crystalline nanoparticles were embedded in a Ni-rich amorphous matrix. A 3 mA deposition current produced nanowires in which an Ag-rich crystalline phase formed a backbone-like configuration in the axial region of the nanowire, whereas the peripheral region contained Ni-rich nanocrystalline and amorphous phases. Isothermal annealing of the nanowires illustrated a phase evolution pathway that was extremely sensitive to the initial nanowire microstructure.
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Leshchenko E. D. and Dubrovskii V. G. "Modeling the growth of tapered nanowires on reflecting substrates." Technical Physics Letters 48, no. 12 (2022): 11. http://dx.doi.org/10.21883/tpl.2022.12.54937.19358.

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The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model, the nanowire radius may be obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters, including the III/V flux ratio and pitch, on the nanowire morphology. Keywords: III-V nanowires, morphology, self-focusing effect, modeling
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Лещенко, Е. Д., та В. Г. Дубровский. "Моделирование роста заостренных нитевидных нанокристаллов на маскированных подложках". Письма в журнал технической физики 48, № 23 (2022): 14. http://dx.doi.org/10.21883/pjtf.2022.23.53945.19358.

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The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model the nanowire radius is obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters on the nanowire morphology, including the III/V flux ratio and pitch.
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Son, Kwang-Soo, Dong Hyun Lee, Jae-Woong Choung, et al. "Catalyst-free synthesis and cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones." Journal of Materials Research 23, no. 12 (2008): 3403–8. http://dx.doi.org/10.1557/jmr.2008.0400.

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We report the catalyst-free synthesis of ZnO nanobranches on Si nanowires using metalorganic chemical vapor deposition. The formation of single-crystalline ZnO nanobranches on Si nanowire backbones has been confirmed by lattice resolved transmission electron microscopy. Depending on the growth parameters, especially the growth temperature, the morphology and size of the ZnO nanobranches evolved from nanothorn-shaped (at 350 °C) to nanoneedle-shaped structures (at 500 °C). When the growth temperature was further increased to 800 °C, thin ZnO nanowire branches grew out of the Si nanowire backbones coated with thin ZnO shells, whereas no ZnO branch was formed on bare Si nanowires due to limited nucleation. The growth behavior was further exploited to fabricate ZnO/Si nanowire networks by growing the ZnO nanowires selectively on laterally aligned Si–ZnO core-shell nanowire arrays. In addition, cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones are discussed with respect to position and size.
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Корякин, А. А., Е. Д. Лещенко та В. Г. Дубровский. "Влияние упругих напряжений на формирование осевых гетеропереходов в трехкомпонентных нитевидных нанокристаллах A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=-". Физика твердого тела 61, № 12 (2019): 2437. http://dx.doi.org/10.21883/ftt.2019.12.48574.31ks.

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The influence of elastic stresses on the formation of axial heterojunctions in ternary III-V nanowires was theoretically investigated. The composition profiles of InAs/GaAs axial heterojunction in self-catalyzed GaxIn1-xAs nanowires were obtained. It was shown that the InAs/GaAs heterojunction width amounts to tens of monolayers and increases with the increase of the nanowire radius due to elastic stresses. The elastic stress relaxation on nanowire sidewalls does not lead to the presence of miscibility gap in GaxIn1-xAs system at typical growth temperature (about 450ºC) and nanowire radius above 5 nm.
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Dissertations / Theses on the topic "Nanowire formation"

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Zettler, Johannes Kristian. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18926.

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Dichte Ensembles aus GaN-Nanodrähten können in der Molekularstrahlepitaxie mithilfe eines selbstinduzierten Prozesses sowohl auf kristallinen als auch amorphen Substraten gezüchtet werden. Aufgrund der Natur selbstgesteuerter Prozesse ist dabei die Kontrolle über viele wichtige Ensembleparameter jedoch eingeschränkt. Die Arbeit adressiert genau diese Einschränkungen bei der Kristallzucht selbstinduzierter GaN-Nanodrähte. Konkret sind das Limitierungen bezüglich der Nanodraht-Durchmesser, die Nanodraht-Anzahl-/Flächendichte, der Koaleszenzgrad sowie die maximal realisierbare Wachstumstemperatur. Für jede dieser Einschränkungen werden Lösungen präsentiert, um die jeweilige Limitierung zu umgehen oder zu verschieben. Als Resultat wurde eine neue Klasse von GaN Nanodrähten mit bisher unerreichten strukturellen und optischen Eigenschaften geschaffen. Mithilfe eines Zwei-Schritt-Ansatzes, bei dem die Wachstumstemperatur während der Nukleationsphase erhöht wurde, konnte eine verbesserte Kontrolle über die Flächendichte, den Durchmesser und den Koaleszenzgrad der GaN-Nanodraht-Ensembles erreicht werden. Darüber hinaus werden Ansätze präsentiert, um die außerordentlich lange Inkubationszeit bei hohen Wachstumstemperaturen zu minimieren und damit wesentlich höhere Wachstumstemperaturen zu ermöglichen (bis zu 905°C). Die resulierenden GaN-Nanodraht-Ensembles weisen schmale exzitonische Übergänge mit sub-meV Linienbreiten auf, vergleichbar zu denen freistehender GaN-Schichten. Abschließend wurden Nanodrähte mit Durchmessern deutlich unterhalb von 10 nm fabriziert. Mithilfe eines Zersetzungsschrittes im Ultrahochvakuum direkt im Anschluss an die Wachstumsphase wurden reguläre Nanodraht-Ensembles verdünnt. Die resultierenden ultradünnen Nanodrähte weisen dielektrisches Confinement auf. Wir zeigen eine ausgeprägte exzitonische Emission von puren GaN-Nanodrähten mit Durchmessern bis hinab zu 6 nm.<br>In molecular beam epitaxy, dense arrays of GaN nanowires form spontaneously on crystalline as well as amorphous substrates. Due to the nature of spontaneous formation, the control over important parameters is limited. This thesis addresses the major limitations of spontaneous nanowire formation, namely the nanowire diameter, number density, and coalescence degree but also the maximum achievable growth temperature, and presents approaches to overcome the same. Thereby, we have fabricated a new class of nanowires with unprecedented structural and optical properties. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire ensembles. Furthermore, we present growth approaches to minimize the long incubation time that precedes nanowire nucleation at elevated temperatures and to thus facilitate significantly higher growth temperatures (up to 905°C). The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy. Finally, we fabricate nanowires with diameters well below 10 nm, the lower boundary given by the nucleation mechanism of spontaneously formed nanowires. Here, regular nanowire arrays are thinned in a post-growth decomposition step in ultra-high vacuum. In situ monitoring the progress of decomposition using quadrupole mass spectrometry enables a precise control over the diameter of the thinned nanowires. These ultrathin nanowires show dielectric confinement, which is potentially much stronger than quantum confinement. We demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm.
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Lu, Kuo-Chang. "Nano-silicide formation through point contact reaction, NiSi/Si/NiSi and PtSi/Si/PtSi nanowire heterostructures for nanodevices." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1779690511&sid=4&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Zettler, Johannes Kristian [Verfasser], Henning [Gutachter] Riechert, W. Ted [Gutachter] Masselink, and Jean Christophe [Gutachter] Harmand. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation / Johannes Kristian Zettler ; Gutachter: Henning Riechert, W. Ted Masselink, Jean Christophe Harmand." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/118557848X/34.

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Zettler, Johannes [Verfasser], Henning [Gutachter] Riechert, W. Ted [Gutachter] Masselink, and Jean Christophe [Gutachter] Harmand. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation / Johannes Kristian Zettler ; Gutachter: Henning Riechert, W. Ted Masselink, Jean Christophe Harmand." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/118557848X/34.

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Ranjan, Nitesh. "Dielectrophoretic formation of nanowires and devices." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1234886392156-77111.

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We report the self assembly of nanostructures via. the bottom-up approach by dielectrophoresis. Dielectrophoresis deals with the force on an electric dipole placed in an external in-homogenous field. The force depends on the geometry and volume of the dielectric material and on the frequency and gradient of the electric field. We report the self-assembly of metallic palladium nanowires from the aqueous solution by dielectrophoresis. The metal cations with the surrounding hydration shell and counter-ion cloud results in the formation of a dipole which responds to the local dielectrophoretic forces. Structural properties and morphology of the palladium nanowires are listed. Depending on the experimental conditions two different types of nanowires were grown. Some of them were extremely thin (5 nm diameter) and branched while the others were thick (25 nm diameter) and dendritic. The wire formation can be divided into the nucleation and growth process. For the particle assembly, a minimum threshold force is needed to overcome the random Brownian motion. The nucleation depends on the asperities on the electrode surface and the growth depends on the tip of the growing wires where exists extremely high field magnitude and in-homogeneties and so the force overcomes the threshold at these locations. We showed that wire growth depends a lot on the formation of the double layer at the electrode/solution interface and potential drop within the double layer. Carbon nanotubes (CNT) were also deposited between the electrodes leading to the formation of field-effect transistors (FETs). We produced CNTFETs having extremely high on/off ratio, in a single step without the requirement of any intermediate burning process of the metallic tubes. Besides these inorganic systems, we also investigated the dielectrophoretic experimental conditions required for self assembly of bio-molecules like microtubules between the electrodes. Hybrid structures were also formed by mixing these materials in combination of two. In conclusion, we report in this work the possibility to assemble a large variety of particles (ions, neutral particles and bio-molecules) between the electrodes leading to the device formation. The thesis was mainly devoted to the task for the synthesis and assembly of the nanostructures via. the bottom-up approach.
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Ranjan, Nitesh. "Dielectrophoretic formation of nanowires and devices." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23832.

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We report the self assembly of nanostructures via. the bottom-up approach by dielectrophoresis. Dielectrophoresis deals with the force on an electric dipole placed in an external in-homogenous field. The force depends on the geometry and volume of the dielectric material and on the frequency and gradient of the electric field. We report the self-assembly of metallic palladium nanowires from the aqueous solution by dielectrophoresis. The metal cations with the surrounding hydration shell and counter-ion cloud results in the formation of a dipole which responds to the local dielectrophoretic forces. Structural properties and morphology of the palladium nanowires are listed. Depending on the experimental conditions two different types of nanowires were grown. Some of them were extremely thin (5 nm diameter) and branched while the others were thick (25 nm diameter) and dendritic. The wire formation can be divided into the nucleation and growth process. For the particle assembly, a minimum threshold force is needed to overcome the random Brownian motion. The nucleation depends on the asperities on the electrode surface and the growth depends on the tip of the growing wires where exists extremely high field magnitude and in-homogeneties and so the force overcomes the threshold at these locations. We showed that wire growth depends a lot on the formation of the double layer at the electrode/solution interface and potential drop within the double layer. Carbon nanotubes (CNT) were also deposited between the electrodes leading to the formation of field-effect transistors (FETs). We produced CNTFETs having extremely high on/off ratio, in a single step without the requirement of any intermediate burning process of the metallic tubes. Besides these inorganic systems, we also investigated the dielectrophoretic experimental conditions required for self assembly of bio-molecules like microtubules between the electrodes. Hybrid structures were also formed by mixing these materials in combination of two. In conclusion, we report in this work the possibility to assemble a large variety of particles (ions, neutral particles and bio-molecules) between the electrodes leading to the device formation. The thesis was mainly devoted to the task for the synthesis and assembly of the nanostructures via. the bottom-up approach.
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Li, Guodong. "Magnetic Domain Wall Formation in Ferromagnetic Nanowires." Thesis, University of York, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534918.

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Priante, Giacomo. "Formation mechanisms of heterostructures and polytypes in III-V nanowires." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066283/document.

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Ce travail examine des nanofils III-V synthétisés en mode vapeur-liquide-solide, une goutte liquide catalysant la croissance unidimensionnelle. En conjuguant expériences d’épitaxie par jets moléculaires, caractérisations structurales et analyses théoriques, j'étudie et clarifie plusieurs questions cruciales. L’une d'elles est le contrôle de la phase cristalline, qui s’avère souvent un mélange de segments cubiques et hexagonaux. Au moyen d’une analyse probabiliste de la séquence d'empilement de nanofils d’InP, je montre que la sélection de phase est déterminée non seulement par les conditions de croissance mais aussi par des interactions entre monocouches. Je souligne et discute le rôle de l'énergie de bord du germe qui médie la formation de chaque monocouche. On sait par ailleurs que le caractère abrupt des interfaces dans les hétérostructures axiales est limité par l’accumulation de matière dans la goutte (effet réservoir). J'étudie la formation de telles hétérostructures dans des nanofils de GaAs auto-catalysés en utilisant un second élément des groupes V (P) ou III (Al). Les profils compositionnels des insertions ternaires sont analysés à la résolution atomique. Les interfaces se révèlent soit plus larges (GaAsP) soit plus étroites (AlGaAs) qu’attendu et la morphologie du front de croissance dépend de la supersaturation. Je montre que, dans les deux cas, la largeur d’interface peut être réduite à quelques monocouches et je suggère d’autres améliorations. Enfin, je présente mes tentatives pour réaliser des nanofils ultraminces de GaAs et GaP et je discute du contrôle de la croissance à l’échelle d’une monocouche par réduction du caractère stochastique de la nucléation<br>This work investigates III-V nanowires synthesized via the vapor-liquid-solid method, whereby a catalyst droplet promotes one-dimensional growth. By combining molecular beam epitaxy experiments, structural characterization and theoretical analyses, I study and clarify several critical issues. One of them is the control of the crystal phase, which is frequently found to be a mix of cubic and hexagonal segments. By performing a probabilistic analysis of the stacking sequence of InP nanowires, I show that phase selection is determined not only by growth conditions but also by interactions between layers. I highlight and discuss the role of the edge energy of the nucleus that mediates the formation of each monolayer. Another important problem is the formation of axial heterostructures, which interface sharpness is severely limited by material accumulation in the droplet (‘reservoir effect’). To this end, I study the formation of such heterostructures in Ga-catalyzed GaAs nanowires using either a second group V element (P) or a second group III element (Al). The composition profiles of the ternary insertions are analyzed with monolayer resolution. The interface widths are found to be larger (GaAsP) or narrower (AlGaAs) than expected, and the morphology of the growth front depends on supersaturation. In both cases, I demonstrate that the interface width can be reduced to a few monolayers and suggest further improvements. Attempts to achieve ultrathin GaAs and GaP nanowires that would permit lateral quantum confinement are presented. Finally, I consider the possibility of minimizing the stochastic character of nucleation ultimately to control the growth of single monolayers
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Priante, Giacomo. "Formation mechanisms of heterostructures and polytypes in III-V nanowires." Electronic Thesis or Diss., Paris 6, 2016. http://www.theses.fr/2016PA066283.

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Ce travail examine des nanofils III-V synthétisés en mode vapeur-liquide-solide, une goutte liquide catalysant la croissance unidimensionnelle. En conjuguant expériences d’épitaxie par jets moléculaires, caractérisations structurales et analyses théoriques, j'étudie et clarifie plusieurs questions cruciales. L’une d'elles est le contrôle de la phase cristalline, qui s’avère souvent un mélange de segments cubiques et hexagonaux. Au moyen d’une analyse probabiliste de la séquence d'empilement de nanofils d’InP, je montre que la sélection de phase est déterminée non seulement par les conditions de croissance mais aussi par des interactions entre monocouches. Je souligne et discute le rôle de l'énergie de bord du germe qui médie la formation de chaque monocouche. On sait par ailleurs que le caractère abrupt des interfaces dans les hétérostructures axiales est limité par l’accumulation de matière dans la goutte (effet réservoir). J'étudie la formation de telles hétérostructures dans des nanofils de GaAs auto-catalysés en utilisant un second élément des groupes V (P) ou III (Al). Les profils compositionnels des insertions ternaires sont analysés à la résolution atomique. Les interfaces se révèlent soit plus larges (GaAsP) soit plus étroites (AlGaAs) qu’attendu et la morphologie du front de croissance dépend de la supersaturation. Je montre que, dans les deux cas, la largeur d’interface peut être réduite à quelques monocouches et je suggère d’autres améliorations. Enfin, je présente mes tentatives pour réaliser des nanofils ultraminces de GaAs et GaP et je discute du contrôle de la croissance à l’échelle d’une monocouche par réduction du caractère stochastique de la nucléation<br>This work investigates III-V nanowires synthesized via the vapor-liquid-solid method, whereby a catalyst droplet promotes one-dimensional growth. By combining molecular beam epitaxy experiments, structural characterization and theoretical analyses, I study and clarify several critical issues. One of them is the control of the crystal phase, which is frequently found to be a mix of cubic and hexagonal segments. By performing a probabilistic analysis of the stacking sequence of InP nanowires, I show that phase selection is determined not only by growth conditions but also by interactions between layers. I highlight and discuss the role of the edge energy of the nucleus that mediates the formation of each monolayer. Another important problem is the formation of axial heterostructures, which interface sharpness is severely limited by material accumulation in the droplet (‘reservoir effect’). To this end, I study the formation of such heterostructures in Ga-catalyzed GaAs nanowires using either a second group V element (P) or a second group III element (Al). The composition profiles of the ternary insertions are analyzed with monolayer resolution. The interface widths are found to be larger (GaAsP) or narrower (AlGaAs) than expected, and the morphology of the growth front depends on supersaturation. In both cases, I demonstrate that the interface width can be reduced to a few monolayers and suggest further improvements. Attempts to achieve ultrathin GaAs and GaP nanowires that would permit lateral quantum confinement are presented. Finally, I consider the possibility of minimizing the stochastic character of nucleation ultimately to control the growth of single monolayers
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Daudin, Rémi. "Formation et surfusion de gouttes d'alliage eutectique AuSi sur substrats de Si : étude in situ par rayonnement synchrotron X." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY003/document.

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Les nanofils (NFs) de semi-conducteur (SC) sont des objets possédant des propriétés très intéressantes pour la fabrication de futurs composants électroniques à l'échelle nanométrique. Ils sont élaborés grâce à l'utilisation d'un catalyseur métallique (Au) formant un point eutectique profond en s'alliant à la phase SC (Si) permettant la germination et la croissance du NF à basses températures. Ce travail a pour but l'étude de la formation, de la structure et du comportement de ces gouttes d'alliage eutectique en interaction avec le substrat dont les propriétés futures du NF vont dépendre. L'étude a été menée in-situ, par utilisation du rayonnement synchrotron qui est un outil parfaitement dédié à la caractérisation de structures à l'échelle atomistique. Les gouttes d'eutectique ont été obtenues par le démouillage d'un film d'or. L'étude de ce procédé a révélé des changements dans les relations d'épitaxies entre l'or et le silicium. Les gouttes ainsi formées sont accompagnées d'une couche de mouillage, se révélant être une reconstruction de surface, dont les conditions de formation ainsi que la structure atomique ont été déterminées. Lors du refroidissement, une augmentation des effets de surfusion a été observée en présence de cette reconstruction et sont expliqués par la structure même de cette dernière qui semble stabiliser l'état liquide. Des expériences similaires ont été faites sur d'autres systèmes (Au-Ge, Al-Si) et une synthèse a été réalisée pour comparer les connaissances actuelles sur le ce sujet avec les résultats de ce travail<br>Semiconductor (SC) nanowires (NMs) have been identified as important components for future electronic and sensor nanodevices. They are produced using a metal catalyst (Au) that forms a low eutectic point with the SC phase (Si) and enables their nucleation and their growth at low temperatures. The aim of this study is to investigate the formation, the structure as well as the behaviour of such liquid eutectic droplets in interaction with the substrates on which the futur NMs properties will later depend. This work has been performed in-situ, using synchrotron radiation which is the perfect tool to characterize this mechanism at the atomistic scale. The eutectic droplets have been obtained through the dewetting of thin gold films. This process has been found to modify the epitaxial relationships between the gold and the silicon substrate. The obtained droplets are accompanied by a wetting layer (WL) whose conditions of formation as well as atomic structure, which turned to be a surface reconstruction, have been determined. During the cooling process, the supercooling effects in such AuSi eutectic droplets have been found to be enhanced in the presence of this reconstruction. They are explained by the specific structure of the reconstruction which is likely to stabilize the liquid phase. Similar experiments on other systems (Au-Ge or Al-Si) were performed and a synthesis has been made in order to present the current knowledge on this topic in comparison with the results of this work
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Books on the topic "Nanowire formation"

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van Houselt, Arie, and Harold J. W. Zandvliet. Self-organizing atom chains. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.9.

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This article examines the intriguing physical properties of nanowires, with particular emphasis on self-organizing atom chains. It begins with an overview of the one-dimensional free electron model and some interesting phenomena of one-dimensional electron systems. It derives an expression for the 1D density of states, which exhibits a singularity at the bottom of the band and extends the free-electron model, taking into consideration a weak periodic potential that is induced by the lattice. It also describes the electrostatic interactions between the electrons and goes on to discuss two interesting features of 1D systems: the quantization of conductance and Peierls instability. Finally, the article presents the experimental results of a nearly ideal one-dimensional system, namely self-organizing platinum atom chains on a Ge(001) surface, focusing on their formation, quantum confinement between the Pt chains and the occurrence of a Peierls transition within the chains.
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Book chapters on the topic "Nanowire formation"

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Samuelson, L., S. B. Carlsson, T. Junno, Hongqi Xu, and L. Montelius. "Real time control of nanowire formation." In Nanoscale Science and Technology. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5024-8_3.

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Kohno, Hideo. "Self-Organized Nanowire Formation of Si-Based Materials." In One-Dimensional Nanostructures. Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-74132-1_3.

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Kalyuzhnaya, Anna S., Aleksandra I. Efimova, Leonid A. Golovan, Kirill A. Gonchar, and Victor Y. Timoshenko. "Formation and optical properties of silicon nanowire arrays." In Silicon Nanomaterials Sourcebook. CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-2.

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Raya, Dheeraj, Kevin Militello, Venkataramana Gadhamshetty, and Saurabh Dhiman. "Nanowire Formation in Sulfate-Reducing Bacteria under Stress Conditions." In ACS Symposium Series. American Chemical Society, 2023. http://dx.doi.org/10.1021/bk-2023-1434.ch004.

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Chang, Ying-Lan, and Sung Soo Yi. "Controlled Formation of Individually Addressable Si Nanowire Arrays for Device Integration." In One-Dimensional Nanostructures. Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-74132-1_4.

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Olesen, L., K. Hansen, E. Lægsgaard, I. Stensgaard, and F. Besenbacher. "Metallic Nanowires: Formation and Quantized Conductance." In Nanowires. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_13.

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Landman, Uzi, W. D. Luedtke, and R. N. Barnett. "Nanowires: Formation Mechanisms, Size Evolution, Mechanical Reversibility, Conductance and Fluctuations." In Nanowires. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_8.

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Correia, A., M. I. Marqués, and N. García. "Visualisation of Nanocontacts Formed between Macroscopic Metallic Wires Leading to Nanowires Formation." In Nanowires. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_23.

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Ueda, Akira, Richard R. Mu, Vanessa C. Saunders, Thurston C. Livingston, Marvin H. Wu, and Don O. Henderson. "Formation of Gold Nanowires on MgO Surfaces." In Surface Engineering. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118788325.ch4.

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Liu, Yi, Fu Liu, and Xinluo Zhao. "Atomistic Simulations of Formation Processes of Carbon Nanowires." In Emerging Carbyne. Jenny Stanford Publishing, 2024. http://dx.doi.org/10.1201/9781003510369-6.

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Conference papers on the topic "Nanowire formation"

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Malhotra, Yakshita, Ayush Pandey, Jungwook Min, et al. "High Efficiency InGaN/GaN Nanowire LED Utilizing Exciton Recombination Dynamics." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sth1i.4.

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Facet formation in InGaN disc-in-wire LEDs leads to increased exciton binding energy due to strain relaxation and reduced polarization fields resulting in an ultra-high efficiency of 25.2% for green emission utilizing excitonic recombination dynamics.
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Rahman, S. F. Abd, U. Hashim, M. N. Md Nor, et al. "Nanowire Formation Using Electron Beam Lithography." In NANOSCIENCE AND NANOTECHNOLOGY: International Conference on Nanoscience and Nanotechnology—2008. AIP, 2009. http://dx.doi.org/10.1063/1.3160194.

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Englander, Ongi, Dane Christensen, Jongbaeg Kim, and Liwei Lin. "Direct Synthesis and Self-Assembly of Silicon Nanowires." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-62047.

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The direct synthesis and self-assembly of silicon nanowires to yield a two-terminal, nano-to-micro integrated system has been demonstrated. The process takes advantage of localized heating to initiate and sustain a bottom up nanowire synthesis mechanism. As soon as the nanowire synthesis process is complete, the integrated system is ready for characterization of mechanical and electrical properties as well as functionalization for sensing applications. The process is CMOS compatible and eliminates the nano-to-micro contact formation process that is currently required of traditional processes.
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Yeo, Woonhong, Jae-Hyun Chung, Kyong-Hoon Lee, Yaling Liu, and Wing Kam Liu. "Hybrid Fiber Fabrication Using an AC Electric Field and Capillary Action." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-42305.

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We present a novel hybrid fiber fabrication method for nanostructured hybrid-materials, using an AC electric field and capillary action. Through this fabrication process, hybrid fibers composed of single walled carbon nanotubes (SWCNTs) and silicon carbide (SiC) nanowires were systematically manufactured. It was demonstrated that both diameter and length of hybrid nanofibers could be controlled by manipulating parameters, such as the mixing ratio of SWCNTs to SiC nanowires, concentration of solution, immersion time, volume of solution, and withdrawal rate. In the fabricated hybrid fibers, the SiC nanowires functioned as a structural frame (host filler materials), while SWCNTs were employed for their extraordinary mechanical and electrical properties as a binder or net. Using this method, the fabrication speed of the hybrid fiber was increased by 20 fold compared to the existing method[1]. According to the simulation and modeling results, the fibers are formed by the following three steps; (1) nanowire bridge formation by dielectrophoresis in solution (2) nanowire fiber formation by compression due to capillary action (3) alignment by the torque due to the capillary action. The proposed processing technology may provide an ample opportunity for fabricating a long hybrid-nanofiber.
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Car, D., M. A. Verheijen, I. van Weperen, et al. "Formation and electronic properties of X- and T- shaped InSb nanowires and nanowire networks." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.c-2-1.

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Schmadicke, Cindy, Markus Potschke, and Gianaurelio Cuniberti. "A novel electrochemical synthesis route for copper nanowire formation." In 2013 IEEE SENSORS. IEEE, 2013. http://dx.doi.org/10.1109/icsens.2013.6688365.

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Song, Man Suk, Lothar Houben, Nadav Rothem, et al. "Unconventional Formation of a Zintl Compound in Nanowire Form." In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2023. http://dx.doi.org/10.1109/nmdc57951.2023.10343785.

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Niosi, F., H. G. Manning, C. G. Rocha, C. O'Callaghan, M. S. Ferreira, and J. J. Bol. "Winner- Takes-All path formation within highly disordered nanowire networks." In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2018. http://dx.doi.org/10.1109/nano.2018.8626261.

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Kato, Shinya, Tatsuya Yamazaki, Shinsuke Miyajima, and Makoto Konagai. "Influence of substrates on formation of polycrystalline silicon nanowire films." In SPIE Solar Energy + Technology, edited by Oleg V. Sulima and Gavin Conibeer. SPIE, 2014. http://dx.doi.org/10.1117/12.2061471.

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Cheng, S. L., C. H. Chung, and H. C. Lee. "Fabrication of Vertically Aligned Silicon Nanowire Arrays and Investigation on the Formation of the Nickel Silicide Nanowires." In 2007 IEEE Conference on Electron Devices and Solid-State Circuits. IEEE, 2007. http://dx.doi.org/10.1109/edssc.2007.4450077.

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