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Dissertations / Theses on the topic 'Nanowire formation'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Zettler, Johannes Kristian. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18926.

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Dichte Ensembles aus GaN-Nanodrähten können in der Molekularstrahlepitaxie mithilfe eines selbstinduzierten Prozesses sowohl auf kristallinen als auch amorphen Substraten gezüchtet werden. Aufgrund der Natur selbstgesteuerter Prozesse ist dabei die Kontrolle über viele wichtige Ensembleparameter jedoch eingeschränkt. Die Arbeit adressiert genau diese Einschränkungen bei der Kristallzucht selbstinduzierter GaN-Nanodrähte. Konkret sind das Limitierungen bezüglich der Nanodraht-Durchmesser, die Nanodraht-Anzahl-/Flächendichte, der Koaleszenzgrad sowie die maximal realisierbare Wachstumstemperatu

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2

Lu, Kuo-Chang. "Nano-silicide formation through point contact reaction, NiSi/Si/NiSi and PtSi/Si/PtSi nanowire heterostructures for nanodevices." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1779690511&sid=4&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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3

Zettler, Johannes Kristian [Verfasser], Henning [Gutachter] Riechert, W. Ted [Gutachter] Masselink, and Jean Christophe [Gutachter] Harmand. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation / Johannes Kristian Zettler ; Gutachter: Henning Riechert, W. Ted Masselink, Jean Christophe Harmand." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/118557848X/34.

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4

Zettler, Johannes [Verfasser], Henning [Gutachter] Riechert, W. Ted [Gutachter] Masselink, and Jean Christophe [Gutachter] Harmand. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation / Johannes Kristian Zettler ; Gutachter: Henning Riechert, W. Ted Masselink, Jean Christophe Harmand." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/118557848X/34.

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5

Ranjan, Nitesh. "Dielectrophoretic formation of nanowires and devices." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1234886392156-77111.

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We report the self assembly of nanostructures via. the bottom-up approach by dielectrophoresis. Dielectrophoresis deals with the force on an electric dipole placed in an external in-homogenous field. The force depends on the geometry and volume of the dielectric material and on the frequency and gradient of the electric field. We report the self-assembly of metallic palladium nanowires from the aqueous solution by dielectrophoresis. The metal cations with the surrounding hydration shell and counter-ion cloud results in the formation of a dipole which responds to the local dielectrophoretic for

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6

Ranjan, Nitesh. "Dielectrophoretic formation of nanowires and devices." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23832.

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We report the self assembly of nanostructures via. the bottom-up approach by dielectrophoresis. Dielectrophoresis deals with the force on an electric dipole placed in an external in-homogenous field. The force depends on the geometry and volume of the dielectric material and on the frequency and gradient of the electric field. We report the self-assembly of metallic palladium nanowires from the aqueous solution by dielectrophoresis. The metal cations with the surrounding hydration shell and counter-ion cloud results in the formation of a dipole which responds to the local dielectrophoretic for

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7

Li, Guodong. "Magnetic Domain Wall Formation in Ferromagnetic Nanowires." Thesis, University of York, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534918.

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8

Priante, Giacomo. "Formation mechanisms of heterostructures and polytypes in III-V nanowires." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066283/document.

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Ce travail examine des nanofils III-V synthétisés en mode vapeur-liquide-solide, une goutte liquide catalysant la croissance unidimensionnelle. En conjuguant expériences d’épitaxie par jets moléculaires, caractérisations structurales et analyses théoriques, j'étudie et clarifie plusieurs questions cruciales. L’une d'elles est le contrôle de la phase cristalline, qui s’avère souvent un mélange de segments cubiques et hexagonaux. Au moyen d’une analyse probabiliste de la séquence d'empilement de nanofils d’InP, je montre que la sélection de phase est déterminée non seulement par les conditions d

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9

Priante, Giacomo. "Formation mechanisms of heterostructures and polytypes in III-V nanowires." Electronic Thesis or Diss., Paris 6, 2016. http://www.theses.fr/2016PA066283.

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Ce travail examine des nanofils III-V synthétisés en mode vapeur-liquide-solide, une goutte liquide catalysant la croissance unidimensionnelle. En conjuguant expériences d’épitaxie par jets moléculaires, caractérisations structurales et analyses théoriques, j'étudie et clarifie plusieurs questions cruciales. L’une d'elles est le contrôle de la phase cristalline, qui s’avère souvent un mélange de segments cubiques et hexagonaux. Au moyen d’une analyse probabiliste de la séquence d'empilement de nanofils d’InP, je montre que la sélection de phase est déterminée non seulement par les conditions d

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10

Daudin, Rémi. "Formation et surfusion de gouttes d'alliage eutectique AuSi sur substrats de Si : étude in situ par rayonnement synchrotron X." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY003/document.

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Les nanofils (NFs) de semi-conducteur (SC) sont des objets possédant des propriétés très intéressantes pour la fabrication de futurs composants électroniques à l'échelle nanométrique. Ils sont élaborés grâce à l'utilisation d'un catalyseur métallique (Au) formant un point eutectique profond en s'alliant à la phase SC (Si) permettant la germination et la croissance du NF à basses températures. Ce travail a pour but l'étude de la formation, de la structure et du comportement de ces gouttes d'alliage eutectique en interaction avec le substrat dont les propriétés futures du NF vont dépendre. L'étu

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11

Artioli, Alberto. "Formation de polarons magnétiques dans des boîtes quantiques de (Cd,Mn)Te insérées dans des nanofils de ZnTe." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY006/document.

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Ce travail de thèse porte sur l’étude des propriétés optiques de boites quantiques anisotropes de (Cd,Mn)Te insérées dans des nanofils de ZnTe. Les boites quantiques étudiées contenant 10% de Mn sont allongées suivant l’axe du fil ce qui tend à favoriser un état fondamental à trou léger ayant une susceptibilité de spin perpendiculaire à l’axe du fil. L’objectif principal de la thèse est l’étude de la formation du Polaron Magnétique dans ces boites et la détermination de leur anisotropie magnétique.Nous avons étudié en premier les propriétés optiques de nanofils de ZnTe et de nanofils coeurs-co

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12

Zoubkoff, Rémi. "Mécanismes de formation et propriétés électroniques de fils de section atomique d'Au et de Pt." Thesis, Aix-Marseille 2, 2010. http://www.theses.fr/2010AIX22018/document.

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Dans cette thèse nous avons réalisé une étude théorique concernant les mécanismes de formation et les propriétés de transport électronique de fils de section atomique d’Au et de Pt.Pour cela, nous avons utilisé un Hamiltonien de Liaisons Fortes donnant accès aux propriétés électroniques et à l’énergie totale. Lors de nos simulations de traction de nanofils cristallins en Dynamique Moléculaire nous avons observé la formation de structures assimilables `a des nanotubes dont la chiralité évolue au cours de la déformation. En poursuivant la traction, nous avons observé la formation de structures p

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13

Chang, Ko-Wei, and 張恪維. "Formation and Characterization of Semiconductor Nanowires and Nanowire Heterostructures." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/70453796279100838749.

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博士<br>國立成功大學<br>化學工程學系碩博士班<br>93<br>One-dimensional (1-D) nanostructures, such as nanotubes, nanowires, and nanorods have great potential for improving our understanding of the fundamental concepts of the roles of both dimensionality and size on physical properties, as well as for application in nanodevices and functional materials. In this dissertation, a bottom up approach for synthesis of semiconductor nanowires and nanowire hetorostructures are demonstrated. 　Many research efforts have been thus devoted to synthesize single crystal Ga2O3 nanowires via the vapor-liquid-solid (VLS) mechanis

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14

Lin, Cheng-I., and 林正一. "Phase formation and nanowire growth on thermally oxidized titanium subtrates." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/45466448355625858248.

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碩士<br>國立東華大學<br>應用物理研究所<br>98<br>Titania (TiO2) is used in a variety of application fields. It’s nanostructures have been recently reported to significantly enhance efficiencies of photo-catalysts as well as electrodes in solar cells. Most researches have focused on nanoparticles, however, more recently nanowires have attracted much attentions due to excellent properties for applications. As compared with the well-known preparation techniques like the hydrothermal methods, growing nanowires by direct oxidation of metal substrates is advantageous, taking into account the low cost, simplicity, a

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15

Chang, Ru-Chun, and 張如君. "Formation of Ag2S Nanoparticle/ZnO Nanowire Composites For Use In Solar Cells." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/61322077590697227282.

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碩士<br>國立成功大學<br>化學工程學系碩博士班<br>97<br>The influences of the Au- and Pt-precoated layer on pulsed current electrodeposition of ZnO nanorods on ITO substrates have been investigated using electroanalyting methods. Compared to Pt-precoated and bare ITO substrates, the Au-precoated ITO substrate has less charging current and more positive potential than that of H2 formation in the nucleation stage at a current density of -2mAcm-2. High-density ZnO nanorods are therefore deposited on the Au-precoated ITO substrate. The Ag2S nanoparticles (NPs) have been successfully prepared on ZnO nanowires (NWs) us

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16

Chou, Meng-Hsien, and 周孟賢. "The investigation of Short-Circuit Diffusion during the Formation of a Single Cupric Oxide Nanowire." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/47gkau.

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碩士<br>國立東華大學<br>應用物理研究所<br>95<br>Short-circuit diffusion was observed in a single CuO nanowire synthesized using thermal oxidation method. The confocal Raman spectra of a single CuO nanowire permit direct observation of the nature of an individual CuO nanowire. The parameter order obtained from the inverse Raman Bg2 peak linewidth results in the length dependency of the linewidth and the short-circuit diffusion length of 3.3 μm. The observed structural information is also consistent with the energy dispersive x-ray spectroscopic mapping. The results confirm the growth of CuO nanowires occurs t

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17

Tseng, Po-Hao, and 曾柏皓. "Formation of Single Crystal Silicon Nanowire by Anodic Oxidation and Electrical Characterization of Non-planar substrate MOS Capacitors for Photo-detector Application." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/82514318297364765807.

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博士<br>國立臺灣大學<br>電子工程學研究所<br>102<br>We demonstrated the self-aligned double layers single crystal silicon nanowires in silicon substrate by the control of the electric field effect of anodic oxidation. The wire pattern was defined by E-beam lithography and was etched by reactive ion etching. The minimum width of single crystal Si nanowire is around 9 nm. The electrical characteristics of non-planar substrate MOS capacitors with ultra thin oxides and different gate areas are also studied and discussed in this work. The capacitance-voltage (C-V) responses of non-planar and planar MOS capacitors a

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18

Kumar, Mukesh. "Formation and characerization of GaN nanowires and study of their photoconduction properties." Thesis, 2017. http://localhost:8080/iit/handle/2074/7419.

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19

Ranjan, Nitesh [Verfasser]. "Dielectrophoretic formation of nanowires and devices / von Nitesh Ranjan." 2009. http://d-nb.info/993335969/34.

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20

Hsu, Li-Chieh, та 許力介. "Formation of the α-Fe2O3 nanowires and their applications". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/72266673442995133127.

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博士<br>國立中正大學<br>化學工程所<br>97<br>The research includes the studies of the synthesis of these?Fe2O3 nanowires (NWs) vertically/laterally and explores their applications. Fundamentals of ?Fe2O3 nanomaterial were reviewed in Chapter 1. The structure of ?Fe2O3 NWs and their anisotropic magnetroresistance, field emission, field effect transistor and visible light photodetector applications were systematically study and reported in chapter 2-5, respectively. In Chapter 2, single–crystalline hexagonal ?Fe2O3 NWs were synthesized on a 50 nm iron thin film by thermal oxidation within 30 minutes at 250o

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21

Li-WenLin and 林立文. "Evaporation-induced Formation of Patterned and Long Metallic Nanowires." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/45796796720592054425.

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碩士<br>國立成功大學<br>化學工程學系碩博士班<br>98<br>In recent years, applications of metallic nanowires have been widely explored in many areas such as nanosensing, Photonics and so on, and various approaches have been proposed and demonstrated to fabricate the nanowires. In this study, evaporation-induced formation of nanowires in conjunction with sintering to generate the metallic nanowires is proposed. The polypeptide solution after reduction reaction was loaded into the microchannel, followed by evaporation and sintering. A series of systematic experiments regarding the types of polypeptides, solution

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22

Wang, Ruoh-Hann, and 王若涵. "Formation of One-Dimensional GaN Nanostructures by Ammoniating Ga2O3 Nanowires." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/11479961144751433367.

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碩士<br>國立成功大學<br>化學工程學系碩博士班<br>92<br>Well-aligned one-dimensional(1D) GaN nanostructures have been formed by ammoniating well-aligned Ga2O3 nanowires. ß-Ga2O3 nanowires were first synthesized on a sapphire substrate by VLS mechanism using single organometallic precursor. Ammoniating of the well-aligned Ga2O3 nanowires were performed under the following conditions: pressure, temperature, NH3 flow rate of 760 torr, 900℃ and 400 sccm, respectively, for various ammoniating conversion periods. Structural analyses indicate that well-aligned 1-D GaN porous nanostructures with Ga2O3 nodes were formed a

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23

Ho, Jo-Hsuan, and 何若瑄. "Formation of Porous Heterostructure Nanowires through Solid-state Diffusion Reaction." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/57mucp.

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碩士<br>國立交通大學<br>材料科學與工程學系所<br>105<br>Metal oxide materials have been widely investigated owing to their various and excellent physical and chemical properties. Among these transitional metal oxides, zinc oxide and iron oxide each play an important role in applications of photoelectric and magnetic. Zinc oxide is naturally a direct band-gap, n-type semiconductor which has wide band-gap. As a result, it exhibits significant physical properties in optical, electrical and piezoelectric fields. Iron is known for its magnetic properties, which possesses various oxidation states, including wüstite(Fe

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"Formation and characterization of SiO₂ and SiC nanowires on biomorphic bamboo." 2006. http://library.cuhk.edu.hk/record=b5893003.

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Cheung Lok Ying Teresa = 竹炭模板上形成的二氧化硅與碳化硅納米線及其表徵 / 張樂影.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2006.<br>Includes bibliographical references.<br>Text in English; abstracts in English and Chinese.<br>Cheung Lok Ying Teresa = Zhu tan mo ban shang xing cheng de er yang hua gui yu tan hua gui na mi xian ji qi biao zheng / Zhang Leying.<br>ABSTRACT --- p.i<br>摘要 --- p.iii<br>ACKNOWLEDGEMENTS --- p.v<br>TABLE OF CONTENTS --- p.vii<br>LIST OF FIGURE CAPTIONS --- p.xi<br>LIST OF TABLE CAPTIONS --- p.xv<br>Chapter Chapter 1 --- Introduction<br>Chapter 1.1. --- Biomineralization proc

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25

Tseng, Ling-Yi, and 曾齡誼. "Formation of Polymer and Composite Nanowires by Nanoskiving Technique for Organic Electronics." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/32533842523667170518.

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碩士<br>國立交通大學<br>照明與能源光電研究所<br>103<br>Organic semiconductor materials have been widely used in the field of organic electronics because they lead to low-cost solution-base fabrication. Transistors, particularly vertical-type ones, can improve electrical performance through their reduced channel length. This property of the organic transistor is related to structural arrangement. Poly(3-hexylthiophene) can achieve a significantly ordered structure through SAM treatment. To effectively control the molecular orientation (parallel to the substrate) and apply it to a vertical transistor, we embedded

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26

姚承佑. "Preparation and Formation Mechanism of ZnO Nanotubes by Acidic Etching ZnO Nanowires." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/94845581284570306989.

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碩士<br>國立交通大學<br>電子工程系所<br>95<br>ZnO nanotubes were prepared by a simple etching process. The fabrication of ZnO nanotubes was harder than it of nanowires. The general process of ZnO nanotubes is a step hydrothermal method by aging and widely researched because of low reaction temperature. However, it is hard to control the diameter and length of ZnO nanotubes due to the growth process still continue when nanotube structure is form so that the size is larger and the aspect ratio is low. Dividing growth and etching process to improve the issues. In this thesis, the etching reaction is clearly ob

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27

Chung, Chin-Chun, and 鍾錦軍. "Synthesis of Titanium Dioxide Nanowires by Microwave-Assisted Hydrothermal Treatment and its Mechanism of Formation." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24240771890908487879.

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博士<br>中原大學<br>化學工程研究所<br>96<br>Titania nanowires in the anatase phase were successfully synthesized using microwave-assisted hydrothermal methods. To accelerate the fabrication procedure of nanowires, microwave-assisted power was applied to the traditional hydrothermal apparatus. Titanium dioxide nanoparticles (ST01, 100% anatase) were utilized as the starting material. Experimental parameters including heating temperature, reaction time, radiation power, and the amount of raw material were studied in the present work. All of the products were characterized by scanning electron microscopy (SEM

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28

Chen, Yu-Fan, and 陳昱帆. "The Electrical Characteristics of the Electric-Field Directed Growth of Silicon Nanowires and Ohmic Contact Formation." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/82700579891688105497.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>96<br>Electric-field-directed growth and self-assembly of undoped and lightly p-type doped silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The nanowires appeared to align with the localized DC electric field and grew across the gap between two electrodes. Moreover, it is found that titanium is an adequate electrode material for electric-field-directed growth of silicon nanowires, and good ohmic contact between SiNWs and Ti electrode is achieve

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29

Chen, Li–Wen, and 陳麗雯. "ZnO nanowires supported agar gel in formation of active substrate for surface-enhanced Raman scattering measurements." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/47995663685516155521.

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碩士<br>國立中興大學<br>化學系所<br>103<br>Surface-enhanced Raman spectroscopy (SERS) is a sensitive and non-destructive analytical tool, which offers abundant chemical information of the examined samples. The successful application of SERS technique for practical application strongly relies on performance of the used SERS substrates. Therefore, a new method to prepare multi-dimensional SERS substrate was proposed in this work, which was fabricated with agar gel as a matrix to encompass silver nanoparticles (AgNPs) with high particle density. To form a stable and reproducible agar-based SERS substrate, Zn

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30

Chen, Yu-Fan. "The Electrical Characteristics of the Electric-Field Directed Growth of Silicon Nanowires and Ohmic Contact Formation." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2507200822294200.

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31

Liu, Shang-Wu, and 劉尚武. "Atomic Force Microscopy Field-induced Oxidation on SOI substrates and Formation of Nickel Silicides on Silicon Nanowires." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/45834898106846933894.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>100<br>Recently, the size of electronic devices approaches to limitations of Moore''s law. One dimension nanostructures, such as nanotubes and nanowires, are attractive building blocks for nanoelectronics due to their unique photoelectric properties. Metal silicides have excellent electric properties in nanoscale, and they have very low barrier height on the valence band of silicon. Moreover, nickel silicides are promising materials for applying in the nanoelectronic devices because of their low Si consumption and thermal stability. Scanning probe lithog

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Thompson, Rebecca Caroline. "Flowers in three dimensions and beyond." Thesis, 2007. http://hdl.handle.net/2152/29682.

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Pattern formation in buckled membranes was studied along with the morphology of flowers formed at the tip of silicon nanowires and ripples formed in suspended graphene sheets. Nash's perturbation method was tested for a simple case where initial and final metrics embed smoothly and there is a smooth path from one surface to another and was found to work successfully. The method was tested in more realistic conditions where a smooth path was not known and the method failed. Cylindrical flower-like membranes with a metric of negative Gaussian curvature were simulated in three and four dimensions

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33

Chang, Han-chen, and 張瀚丞. "Effects of oxidizing agents and temperature on the formation rate and microstructure of Si nanowires fabricated in aqueous HF solutions." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24509415946950926104.

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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>96<br>Effects of various oxidizing agents such as AgNO3, Fe(NO3)3, and H2O2 on the formation rate and microstructure of Si nanowires (SiNWs) by etching the Si substrates in aqueous HF solutions with the Ag catalyst at 15-50˚C for 10-40 min were studied. The length of SiNWs increased with the etching time and etching temperature. In general, the SiNW arrays fabricated in HF, HF/Fe(NO3)3, and HF/AgNO3 solutions, respectively, were smooth, while those fabricated in the HF/H2O2 solution were rough. For the etching time less than 20 min, the formation rate of SiNWs

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Petersen, Jan. "Strukturbildung und Rauigkeiten an Grenzflächen des Ni-Ag-Legierungssystems." Doctoral thesis, 2008. http://hdl.handle.net/11858/00-1735-0000-0006-B469-B.

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