Relevant bibliographies by topics / Narrow band gap

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  1. Dissertations / Theses

Academic literature on the topic 'Narrow band gap'

Author: Grafiati
Published: 25 January 2025

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Dissertations / Theses on the topic "Narrow band gap"

1

VALLONE, MARCO ERNESTO. "Physics-based simulation of narrow and wide band gap photonic devices." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2639782.

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Historically, infrared (IR) detector technologies are connected mainly with controlling and night-vision problems: in a first stage, applications concerned simply with detection of IR radiation, but very soon capabilities to form IR images were developed, opening the way to systems for recognition and surveillance, especially for military purposes. Since the last decade of the twentieth century, the use of IR imaging systems for civil and peaceful purposes have increased continuously: these include medical and industrial applications, detection of earth resources, earth and universe sciences,
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Molis, Gediminas. "Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093655-47390.

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Generation of terahertz radiation from semiconductor surfaces has great potential for investigation of physical properties of semiconductors. This work focuses on the semiconductor research when generating terahertz pulses from a variety of semiconductor surfaces. THz radiation from semiconductor surfaces can be generated on a whole range of physical mechanisms: the surface field screening, photo-Dember effect, the optical rectification, electric field induced optical rectification, plasma oscillations, coherent phonons and plasmons. A number of important semiconductor parameters such as refra
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3

Sapkota, Gopal. "Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc499984/.

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Various techniques to synthesize nanowires and nanotubes as a function of growth temperature and time were investigated. These include growth of nanowires by a chemical vapor deposition (CVD) system using vapor-liquid-solid (VLS) growth mechanism and electro-chemical synthesis of nanowires and nanotubes. Narrow band gap InSb Eg = 0.17 eV at room temp) nanowires were successively synthesized. Using a phase diagram, the transition of the nanowire from metallic- semiconducting- semi-metallic phase was investigated. A thermodynamic model is developed to show that the occurrence of native defects i
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Kotitschke, Ralf Thomas. "The effects of band structure on recombination processes in narrow gap materials and laser diodes." Thesis, University of Surrey, 1999. http://epubs.surrey.ac.uk/843643/.

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The work described in this thesis investigates the effects of bandstructure modifications, brought about by Landau confinement, hydrostatic pressure and uniaxial stress, on recombination processes in narrow-gap materials and laser diodes. The effects of Landau confinement on the characteristics of InSb-based emission devices operating at a wavelength of ~5mum at 77K were studied. The change in performance due to the magnetic field applied along both the cavity and the growth direction and thereby simulating quasi-quantum wire and quasi-quantum dot structures clearly demonstrated the benefits,
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Anyebe, Ezekiel. "Growth of narrow band gap semiconductor nanowires on silicon and graphitic substrates by droplet epitaxy." Thesis, Lancaster University, 2015. http://eprints.lancs.ac.uk/74590/.

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This thesis is focused on the growth of narrow band gap semiconductor nanowires (NWs) on silicon and graphite by droplet epitaxy. First, the growth conditions of In droplets suitable for the nucleation of NWs was identified. Vertically-aligned and non-tapered InAs NWs were then realized on bare Si. It is shown that the diameter and areal density of NWs are defined by the geometry of pre-deposited In droplets. The NWs exhibit a dominant PL peak associated with the band to band (BtB) emission in addition to a distinct BtB temperature dependent red-shift, strong emission efficiency (up to 2500C)
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6

Wayzani, Abdel Aziz. "[Ρt]-οligοmers as nοvel dοnοrs fοr bulk heterοjunctiοn sοlar cell applicatiοn". Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMC240.

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Ce manuscrit se consacre au développement d'oligomères à base de platine en tant que nouveaux donneurs pour des cellules solaires organiques à hétérojonction en vrac, dans le but d'améliorer leurs performances par le biais de modifications structurelles. Le travail est divisé en trois parties principales. La première partie examine comment réduire la bande interdite des [Pt]-oligomères en modifiant la structure du ligand. Cette adaptation vise à accroître la longueur de conjugaison, la planéité, la stabilisation des quinones et à renforcer l'effet "push-pull", notamment grâce à l'ajout de 3,4é
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7

Berenguer, Verdú Antonio José. "Analysis and design of efficient passive components for the millimeter-wave and THz bands." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/84004.

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This thesis tackles issues of particular interest regarding analysis and design of passive components at the mm-wave and Terahertz (THz) bands. Innovative analysis techniques and modeling of complex structures, design procedures, and practical implementation of advanced passive devices are presented. The first part of the thesis is dedicated to THz passive components. These days, THz technology suffers from the lack of suitable waveguiding structures since both, metals and dielectric, are lossy at THz frequencies. This implies that neither conventional closed metallic structures used at micr
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Bovkun, Leonid. "Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY060/document.

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Le tellurure de mercure et de cadmium (HgCdTe ou MCT) est un matériau reconnu pour la physique de la matière condensée, dont l'histoire, datant aujourd'hui de plus de cinquante ans, constitue un excellent exemple des progrès remarquables réalisés dans la recherche sur les semi-conducteurs et les semi-métaux. Notre travail est principalement motivé par l’intérêt fondamental que suscitent ces systèmes, mais notre recherche peut également avoir un impact pratique (indirect) sur la médecine, la surveillance ou la détection de l’environnement ainsi que sur les systèmes de sécurité. Cela peut aider
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Wang, Chao-Chun, and 王朝俊. "Narrow band gap Si-based material (Si1-xGex) processes, analyses and solarcell applications." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/29003002404262592025.

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碩士<br>明道大學<br>材料科學與工程學系碩士班<br>97<br>Abstract In this research, the hydrogenated amorphous silicon films (a-Si:H) and hydrogenated silicon germanium (a-SiGe:H) films were deposited using by High-frequency plasma enhanced chemical vapor deposition (HF-PECVD). For intrinsic Si layer research, pressure effect on the properties of Si films were investigated. The properties of intrinsic Si films such as deposition rate, crystalline fraction, absorption coefficient, band gap, dark conductivity, photo conductivity, hydrogen content and microstructure factor as function as deposition pressure. We inves
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10

Reifsnider, Jason Miles 1967. "Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy." 2003. http://hdl.handle.net/2152/12359.

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