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Relevant bibliographies by topics / Negative resistance circuits

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Academic literature on the topic 'Negative resistance circuits'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Negative resistance circuits"

1

Grebennikov, A. V. "Stability of Negative Resistance Oscillator Circuits." International Journal of Electrical Engineering Education 36, no. 3 (1999): 242–54. http://dx.doi.org/10.7227/ijeee.36.3.6.

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Trajkovic, L. "Negative differential resistance in transistor circuits." IEEE Transactions on Circuits and Systems 33, no. 7 (1986): 736. http://dx.doi.org/10.1109/tcs.1986.1085981.

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Ulansky, Vladimir, Ahmed Raza, and Hamza Oun. "Electronic Circuit with Controllable Negative Differential Resistance and its Applications." Electronics 8, no. 4 (2019): 409. http://dx.doi.org/10.3390/electronics8040409.

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Electronic devices and circuits with negative differential resistance (NDR) are widely used in oscillators, memory devices, frequency multipliers, mixers, etc. Such devices and circuits usually have an N-, S-, or Λ-type current-voltage characteristics. In the known NDR devices and circuits, it is practically impossible to increase the negative resistance without changing the type or the dimensions of transistors. Moreover, some of them have three terminals assuming two power supplies. In this paper, a new NDR circuit that comprises a combination of a field effect transistor (FET) and a simple

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Surakampontorn, W. "Integrable wide-dynamic-range negative resistance circuits." Electronics Letters 21, no. 11 (1985): 506–8. http://dx.doi.org/10.1049/el:19850359.

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Gan, Kwang-Jow, Cher-Shiung Tsai, and Shih-Hao Liu. "Multiple-input logic circuit design using BiCMOS-based negative differential resistance circuits." Analog Integrated Circuits and Signal Processing 73, no. 1 (2011): 409–14. http://dx.doi.org/10.1007/s10470-011-9709-3.

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Trajkovic, L., and A. N. Willson. "Complementary two-transistor circuits and negative differential resistance." IEEE Transactions on Circuits and Systems 37, no. 10 (1990): 1258–66. http://dx.doi.org/10.1109/31.103220.

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Hopf, B. P., I. Wolff, and M. Guglielmi. "Coplanar MMIC active bandpass filters using negative resistance circuits." IEEE Transactions on Microwave Theory and Techniques 42, no. 12 (1994): 2598–602. http://dx.doi.org/10.1109/22.339802.

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Wu, Jian-Feng, Shang-Shang He, Feng Wang, Yu Wang, Xin-Gang Zhao, and Qi Wang. "Improved resistance matrix approach for readout of the two-dimensional resistive sensor array." Transactions of the Institute of Measurement and Control 41, no. 3 (2018): 875–82. http://dx.doi.org/10.1177/0142331218774095.

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In the readout circuits of the two-dimensional (2-D) resistive sensor arrays, various auxiliary electrical components were used to reduce their crosstalk errors but resulted in increased circuit complexity. Readout circuits with low-complexity structures were necessary for wearable electronic applications. With only several resistors and a microcontroller, readout circuit based on resistance matrix approach (RMA) achieved low complexity but suffered from small resistance range and large measurement error caused by the output ports’ internal resistances of the microcontroller. For suppressing t

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Gan, Kwang Jow, Zheng Jie Jiang, Cher Shiung Tsai, et al. "Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique." Applied Mechanics and Materials 328 (June 2013): 669–73. http://dx.doi.org/10.4028/www.scientific.net/amm.328.669.

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We present three oscillator designs using the negative-differential-resistance (NDR) circuit which is composed of several Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) devices. These oscillator circuits are composed of the NDR circuit, resistor, inductor, and capacitor. The oscillation frequencies are about several GHz based on the HSPICE simulation results. The circuits are designed using a standard 0.18 μm BiCMOS technique. Because our circuits are mainly made of a BiCMOS-NDR circuit that is different from

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Berezowski, K. S. "Compact binary logic circuits design using negative differential resistance devices." Electronics Letters 42, no. 16 (2006): 902. http://dx.doi.org/10.1049/el:20061288.

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Dissertations / Theses on the topic "Negative resistance circuits"

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Aguila, Thierry. "Transistors a effet de champ a grille isolee sur heterostructure gaalas/gaas : etude, realisation et application aux circuits integres." Toulouse, INSA, 1989. http://www.theses.fr/1989ISAT0006.

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Un transistor a effet de champ de type mis (metal isolant semiconductor) a ete realise a partir d'une heterostructure gaalas/gaas non intentionnellement dopee aisement obtenue par les methodes d'epitaxie classiques. Ce transistor, appele misfet ou sisfet selon la nature metallique ou semiconductrice du materiau de grille, est comparable a un transistor a haute mobilite electronique (hemt). En effet, ce dernier utilise une heterostructure identique dont la couche gaalas est dopee. L'absence de dopage affranchit le misfet-sisfet des effets indesirables rencontres lors du fonctionnement du hemt.

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Wen, Bo. "Stability Analysis of Three-Phase AC Power Systems Based on Measured D-Q Frame Impedances." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/51202.

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Small-signal stability is of great concern for distributed power systems with a large number of regulated power converters. These converters are constant-power loads (CPLs) exhibit a negative incremental input resistance within the output voltage regulation bandwidth. In the case of dc systems, design requirements for impedances that guarantee stability have been previously developed and are used in the design and specification of these systems. In terms of three-phase ac systems, a mathematical framework based on the generalized Nyquist stability criterion (GNC), reference frame theory, and m

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Narayanaswamy, Anand Subramanian. "A Non-Contact Sensor Interface for High-Temperature, MEMS Capacitive Sensors." Case Western Reserve University School of Graduate Studies / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1275675071.

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McCloskey, Edward Daniel. "Q-Enhanced LC Resonators for Monolithic, Low-Loss Filters in Gallium Arsenide Technology." Thesis, Virginia Tech, 2001. http://hdl.handle.net/10919/31959.

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The rapid development of wireless applications has created a demand for low-cost, compact, low-power hardware solutions. This demand has driven efforts to realize fully integrated, "single-chip" systems. While substantial progress had been made in the integration of many RF and baseband processing elements through the development of new technologies and refinements of existing technologies, progress in the area of fully monolithic filters has been limited due to the losses (low Qs) associated with integrated passive elements in standard IC processes. The work in this thesis focuses on the

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Patel, Vishal. "CMOS negative resistance circuits." Thesis, 2008. http://spectrum.library.concordia.ca/975640/1/MR40893.pdf.

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Active resistors in VLSI technology have grown in stature as they enable the design of large resistive loads without using excessively bulky resistors, or a high voltage supply. Active resistors designed in CMOS technology have the property of being voltage controlled, which permits the design of negative resistance circuits. A negative resistance circuit has the property in which the current is a decreasing function of the input voltage, and has an I-V curve with a negative slope. They have the potential of being a key building block for larger electronic systems in VLSI technology, with appl

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TuChun-Da and 塗俊達. "Design and Fabrication of New-Type Negative Differential Resistance Devices and Applied Integrated Circuits by SiGe Process." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/30788420298677873592.

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碩士<br>崑山科技大學<br>電子工程研究所<br>94<br>Comparing to conventional NDR device such as resonant-tunneling-diode (RTD) device, it is fabricated by the technique of compound semiconductor. However in our work, the NDR device is consisted of three NMOS and one PMOS devices, so we can fabricate this device by the standard CMOS process. The multiple-peak NDR devices provide a good opportunity to implement functional circuit, for multiple-valued logic and memory application, with reduced complexity. Numerous applications create the multiple-peak I-V characteristics with two or more NDR devices connected in s

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Dan, Surya Shankar. "Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits." Thesis, 2009. http://hdl.handle.net/2005/666.

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Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer MOS transistors. Single Electron Transistor (SET) has attracted attention mainly because of its unique Coulomb blockade oscillations characteristics, ultra low power dissipation and nanoscale feature size. Despite the high potential, due to some intrinsic limitations (e.g., very low current drive) it will be very diﬃcult for SET to compete head-to-head with CMOS’s large-scale infrastructure, proven design m

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Li, Yu-kuang, and 李昱寬. "Design of Logic Circuit and Frequency Divider Using Negative differential Resistance Circuit by BiCMOS Process." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/z883q5.

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碩士<br>崑山科技大學<br>電子工程研究所<br>97<br>This paper is based on N-type MOS-HBT-NDR circuit to design a new type of logic gate circuits, The use of a monostable-bistable transition logic element (MOBILE) logic gates to realize the principle of operation, ,and NMOS devices to control the input stage circuit NDR circuit switching action, And the overall modulation circuits I-V characteristic curve. And with Si-based system of CMOS and SiGe-based way of the BiCMOS process, the circuit will be designed, to the way integrated circuits to achieve. And we by the NDR curve of the IV curve can be observed, NDR

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Books on the topic "Negative resistance circuits"

1

C, McGill T. Device Physics of Superlattices and Small Structures. Defense Technical Information Center, 1987.

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Book chapters on the topic "Negative resistance circuits"

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Bawiec, Marek A., Bartosz Wojciechowski, Maciej Nikodem, and Janusz Biernat. "Synthesis of Logic Circuits Based on Negative Differential Resistance Property." In Computer Aided Systems Theory – EUROCAST 2011. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27549-4_65.

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Nikodem, Maciej, Marek A. Bawiec, and Tomasz R. Surmacz. "Negative Difference Resistance and Its Application to Construct Boolean Logic Circuits." In Computer Networks. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13861-4_4.

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"Photocoupled FET's Structure Negative Differential Resistance (NDR) Circuits." In Optoisolation Circuits. WORLD SCIENTIFIC, 2012. http://dx.doi.org/10.1142/9789814317016_0005.

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Berger, P. R., and A. Ramesh. "Negative Differential Resistance Devices and Circuits." In Comprehensive Semiconductor Science and Technology. Elsevier, 2011. http://dx.doi.org/10.1016/b978-0-44-453153-7.00013-4.

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"Optoisolation Negative Differential Resistance (NDR) Circuits in Topological Structures." In Optoisolation Circuits. WORLD SCIENTIFIC, 2012. http://dx.doi.org/10.1142/9789814317016_0004.

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"Optoisolation Negative Differential Resistance (NDR) Circuits as a Dynamical System." In Optoisolation Circuits. WORLD SCIENTIFIC, 2012. http://dx.doi.org/10.1142/9789814317016_0003.

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Nahin, Paul J. "What You Need to Know to Read This Book." In The Logician and the Engineer. Princeton University Press, 2017. http://dx.doi.org/10.23943/princeton/9780691176000.003.0001.

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This chapter details the background knowledge needed to read this book. Specifically, it assumes some knowledge of mathematics and electrical physics and an appreciation for the value of analytical reasoning—but no more than a technically minded college-prep high school junior or senior would have. In particular, the math level is that of algebra, including knowing how matrices multiply. The electrical background is simple: knowing (1) that electricity comes in two polarities (positive and negative) and that electrical charges of like polarity repel and of opposite polarity attract; and (2) understanding Ohm's law for resistors (that the voltage drop across a resistor in volts is the current through the resistor in amperes times the resistance in ohms) and the circuit laws of Kirchhoff (that the sum of the voltage drops around any closed loop is zero, which is an expression of the conservation of energy; the sum of all the currents into any node is zero).

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Conference papers on the topic "Negative resistance circuits"

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Patel, Vishal, and R. Raut. "A study on CMOS negative resistance circuits." In 2008 Canadian Conference on Electrical and Computer Engineering - CCECE. IEEE, 2008. http://dx.doi.org/10.1109/ccece.2008.4564746.

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Chi, Baoyong, Xiaolei Zhu, Ziqiang Wang, and Zhihua Wang. "Quadrature Oscillator with Negative-Resistance Compensated Transformer Couple." In 2005 IEEE Asian Solid-State Circuits Conference. IEEE, 2005. http://dx.doi.org/10.1109/asscc.2005.251760.

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Berezowski, Krzysztof S., and Sarma B. K. Vrudhula. "Multiple-Valued Logic Circuits Design Using Negative Differential Resistance Devices." In 37th International Symposium on Multiple-Valued Logic. IEEE, 2007. http://dx.doi.org/10.1109/ismvl.2007.36.

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Molchanov, Pavlo A., Victoria Checkotun, Pavlo Mulyar, and Olena Linnyk. "Microwave processing of optical signals with the negative resistance circuits." In International Conference on Optoelectronic Information Technologies, edited by Sergey V. Svechnikov, Volodymyr P. Kojemiako, and Sergey A. Kostyukevych. SPIE, 2001. http://dx.doi.org/10.1117/12.429771.

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Brucher, A., Ph Meunier, B. Jarry, P. Guilion, and S. E. Sussman-Fort. "Negative resistance monolithic circuits for microwave planar active filter losses compensation." In 25th European Microwave Conference, 1995. IEEE, 1995. http://dx.doi.org/10.1109/euma.1995.337094.

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Barrett, John P., and Steven A. Cummer. "Active nonlinear metamaterials loaded with negative differential resistance elements and circuits." In SPIE NanoScience + Engineering, edited by Allan D. Boardman, Nader Engheta, Mikhail A. Noginov, and Nikolay I. Zheludev. SPIE, 2012. http://dx.doi.org/10.1117/12.928991.

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Liang, Dong-Shong, and Kwang-Jow Gan. "New D-Type Flip-Flop Design Using Negative Differential Resistance Circuits." In 4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008). IEEE, 2008. http://dx.doi.org/10.1109/delta.2008.11.

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Andriesei, Cristian, Liviu Goras, and Farid Temcamani. "Negative resistance based tuning of an RF bandpass filter." In 2008 4th European Conference on Circuits and Systems for Communications (ECCSC. IEEE, 2008. http://dx.doi.org/10.1109/eccsc.2008.4611651.

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Linkai Wang, Ze Jia, and Tianling Ren. "Bipolar switching analysis and negative resistance phenomenon in TiO." In 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC). IEEE, 2010. http://dx.doi.org/10.1109/edssc.2010.5713758.

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Shen, Ding-Lan, and Wei-Tseh Lee. "A negative resistance compensated switching current sampled-and-hold circuit." In 2009 Joint IEEE North-East Workshop on Circuits and Systems and TAISA Conference (NEWCAS-TAISA). IEEE, 2009. http://dx.doi.org/10.1109/newcas.2009.5290493.

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