Relevant bibliographies by topics / NEGF

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  2. Dissertations / Theses
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Academic literature on the topic 'NEGF'

Author: Grafiati
Published: 4 June 2021
Last updated: 21 February 2023

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Journal articles on the topic "NEGF"

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Manna, Narugopal, Nadeema Ayasha, Santosh K. Singh, and Sreekumar Kurungot. "A NiFe layered double hydroxide-decorated N-doped entangled-graphene framework: a robust water oxidation electrocatalyst." Nanoscale Advances 2, no. 4 (2020): 1709–17. http://dx.doi.org/10.1039/c9na00808j.

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This work introduces the synthesis and water oxidation reaction of the N-doped entangled graphene framework (NEGF) decorated with NiFe-LDH nanostructures (NiFe-LDH/NEGF) showing improved catalytic durability owing to its open and porous 3D structure.
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Bahun, Mateja, and Brigita Skela-Savič. "Dejavniki neizvedene zdravstvene nege." Obzornik zdravstvene nege 55, no. 1 (March 19, 2021): 42–51. http://dx.doi.org/10.14528/snr.2021.55.1.3061.

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Uvod: Neizvedena zdravstvena nega je koncept, ki se pojavlja v zdravstveni oskrbi pacientov po vsem svetu. Namen sistematičnega pregleda literature je opisati neizvedeno zdravstveno nego in pridobiti razumevanje povezanosti koncepta z dejavniki za njen nastanek.Metode: Uporabljen je bil sistematični pregled literature, izveden v podatkovnih bazah PubMed, CINAHL, Wiley library online, COBISS.SI februarja in marca 2020. Iskalni pojmi so bili: neizvedena zdravstvena nega, zamujena oskrba; v angleškem jeziku pa unfinished nursing care, missed nursing care, implicit rationing, care left undone. Iskalna strategija je temeljila na vključitvenih kriterijih: znanstvena revija, recenzirana publikacija, dostopnost v polnem besedilu, slovenski ali angleški jezik, obdobje 2015–2020. Rezultati so bili analizirani s tematsko analizo.Rezultati: Skupaj je bilo identificiranih 1.667 in v končno analizo vključenih 16 zadetkov: dva sistematična pregleda literature, dvanajst presečnih raziskav in dve opisni kvalitativni raziskavi, kar skupaj združuje rezultate 88.294 zaposlenih v zdravstveni negi iz 21 držav. Rezultati so pokazali tri skupine dejavnikov za neizvedeno zdravstveno nego: kadrovske značilnosti, značilnosti delovnega okolja in timsko delo s komunikacijo.Diskusija in zaključek: Rezultati kažejo, da so vzroki za neizvedeno zdravstveno nego kompleksni in nekonsistentni. Med državami se razlikujejo tudi zaradi različnih izobraževalnih sistemov v zdravstveni negi. Povezani so z dejavniki v zdravstveni organizaciji in značilnostmi medicinskih sester. Če želimo na nacionalni ravni ugotoviti količino in obseg neizvedene zdravstvene nege, potrebujemo lastne podatke o stanju na tem področju v Sloveniji.
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Bergmann, Nicolas, and Michael Galperin. "A Green’s function perspective on the nonequilibrium thermodynamics of open quantum systems strongly coupled to baths." European Physical Journal Special Topics 230, no. 4 (April 12, 2021): 859–66. http://dx.doi.org/10.1140/epjs/s11734-021-00067-3.

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AbstractWe give a nonequilibrium Green’s function (NEGF) perspective on thermodynamics formulations for open quantum systems that are strongly coupled to baths. A scattering approach implying thermodynamic consideration of a supersystem (system plus baths) that is weakly coupled to external superbaths is compared with the consideration of thermodynamics of a system that is strongly coupled to its baths. We analyze both approaches from the NEGF perspective and argue that the latter yields a possibility of thermodynamic formulation consistent with a dynamical (quantum transport) description.
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Voves, Jan, Tomáš Třebický, and Roman Jackiv. "NEGF simulation of the RTD bistability." Journal of Computational Electronics 6, no. 1-3 (January 24, 2007): 259–62. http://dx.doi.org/10.1007/s10825-006-0095-5.

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MAITI, T. K., and C. K. MAITI. "NONEQUILIBRIUM GREEN'S FUNCTION BASED QUANTUM TRANSPORT SIMULATION FOR STRAINED-ENGINEERED NANOSCALE TRANSISTORS IN THE PRESENCE OF ELECTRON–PHONON INTERACTIONS." International Journal of Nanoscience 09, no. 04 (August 2010): 327–33. http://dx.doi.org/10.1142/s0219581x10006909.

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Based on ab initio formulation and using nonequilibrium Green's function (NEGF) formalism, electronic transport in the presence of electron–phonon interactions in strained-engineered nanoscale transistors is presented. Ab initio methods are applied to treat the metal/semiconductor interface properly. NEGF formalism is applied as quantum transport and phonon scattering are the dominant factors in devices under realistic operating voltages. Local self-energy functions for electron–phonon scattering have been obtained using deformation potential theory. This approach is applied to the study of electronic transport in strain-engineered nanowire transistors. Electron–phonon interactions on broadening of local density of states are also reported.
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Akbari, Moaazameh, Mehdi Jafari Shahbazzadeh, Luigi La Spada, and Alimorad Khajehzadeh. "The Graphene Field Effect Transistor Modeling Based on an Optimized Ambipolar Virtual Source Model for DNA Detection." Applied Sciences 11, no. 17 (August 31, 2021): 8114. http://dx.doi.org/10.3390/app11178114.

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The graphene-based Field Effect Transistors (GFETs), due to their multi-parameter characteristics, are growing rapidly as an important detection component for the apt detection of disease biomarkers, such as DNA, in clinical diagnostics and biomedical research laboratories. In this paper, the non-equilibrium Green function (NEGF) is used to create a compact model of GFET in the ballistic regime as an important building block for DNA detection sensors. In the proposed method, the self-consistent solutions of two-dimensional Poisson’s equation and NEGF, using the nearest neighbor tight-binding approach on honeycomb lattice structure of graphene, are modeled as an efficient numerical method. Then, the eight parameters of the phenomenological ambipolar virtual source (AVS) circuit model are calibrated by a least-square curve-fitting routine optimization algorithm with NEGF transfer function data. At last, some parameters of AVS that are affected by induced charge and potential of DNA biomolecules are optimized by an experimental dataset. The new compact model response, with an acceptable computational complexity, shows a good agreement with experimental data in reaction with DNA and can effectively be used in the plan and investigation of GFET biosensors.
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He, Chao, Guocai Liu, Huiyan Zhao, Kun Zhao, Zuju Ma, and Xingtao An. "Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship with photovoltaic performance." Physical Chemistry Chemical Physics 22, no. 16 (2020): 8658–66. http://dx.doi.org/10.1039/d0cp01176b.

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Subhan, Fazle, M. Umar Farooq, and Jisang Hong. "Bias-dependent transport properties of passivated tilted black phosphorene nanoribbons." Physical Chemistry Chemical Physics 20, no. 16 (2018): 11021–27. http://dx.doi.org/10.1039/c8cp00090e.

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Huong, Vu Thi Thu, Truong Ba Tai, and Minh Tho Nguyen. "A theoretical study on charge transport of dithiolene nickel complexes." Physical Chemistry Chemical Physics 18, no. 8 (2016): 6259–67. http://dx.doi.org/10.1039/c5cp07277h.

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Gao, Siyan, Liang Liu, Bo Wen, and Xi Zhang. "Monolayer InSe photodetector with strong anisotropy and surface-bound excitons." Physical Chemistry Chemical Physics 23, no. 10 (2021): 6075–83. http://dx.doi.org/10.1039/d1cp00255d.

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Dissertations / Theses on the topic "NEGF"

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Hosenfeld, Fabian. "NEGF Based Analytical Modeling of Advanced MOSFETs." Doctoral thesis, Universitat Rovira i Virgili, 2017. http://hdl.handle.net/10803/462901.

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La corrent túnel de font a drenador (SD) disminueix el rendiment dels dispositius MOSFETs quan la longitud del canal cau per sota de 10 nm. La modelització dels efectes quàntics incloent la corrent túnel SD ha guanyat més importància especialment per als desenvolupadors de models compactes. La funció de Green de no equilibri (NEGF) s'ha convertit en un mètode de l'estat-de-art per a la simulació a nano-escala dels dispositius en els últims anys. En el sentit d'un enfocament de simulació a escala múltiple és necessari tancar la bretxa entre els models compactes amb el seu càlcul ràpid i eficient del corrent, i els models numèrics que consideren els efectes quàntics dels dispositius de nano escala . En aquest treball, s'introdueix un model analític basat en NEGF pels MOSFETs de doble comporta (DG) de nano-escala i FETs d'efecte túnel. El model consisteix en una solució del potencial de forma tancada a partir d'un model compacte clàssic i un formalisme NEGF 1D per al càlcul del corrent, tenint en compte els efectes quàntics. El càlcul del potencial omet l'acoblament iteratiu, la qual cosa permet el càlcul directe del corrent. El model es basa en un enfocament balístic del mètode NEGF on els efectes de la retro-dispersió es consideren com de segon ordre de manera simplificada. La precisió i escalabilitat del model no iteratiu per a DG MOSFET s'inspecciona en comparació de dades numèriques de simulacions TCAD nanoMOS per a longituds de canal des de 6 nm fins a 30 nm. Amb l'ajuda d'aquest model es realitzen recerques sobre els efectes de canal curt i de la temperatura. Els resultats del model analític de FET-túnel es verifiquen amb dades numèriques provinents de simulacions TCAD Sentaurus.
La corriente túnel de fuente a drenador (SD) disminuye el rendimiento de los dispositivos MOSFETs cuando la longitud del canal cae por debajo de 10 nm. La modelización de los efectos cuánticos incluyendo la corriente túnel SD ha ganado más importancia especialmente para los desarrolladores de modelos compactos. La función de Green de no equilibrio (NEGF) se ha convertido en un método del estado-de-arte para la simulación a nano-escala de los dispositivos en los últimos años. En el sentido de un enfoque de simulación a escala múltiple es necesario cerrar la brecha entre los modelos compactos con su cálculo rápido y eficiente de la corriente, y los modelos numéricos que consideran los efectos cuánticos de los dispositivos de nano escala . En este trabajo, se introduce un modelo analítico basado en NEGF para los MOSFETs de doble compuerta (DG) de nano-escala y FETs de efecto túnel. El modelo consiste en una solución del potencial de forma cerrada a partir de un modelo compacto clásico y un formalismo NEGF 1D para el cálculo de la corriente, teniendo en cuenta los efectos cuánticos. El cálculo del potencial omite el acoplamiento iterativo, lo que permite el cálculo directo de la corriente. El modelo se basa en un enfoque balístico del método NEGF donde los efectos de la retro-dispersión se consideran como de segundo orden de manera simplificada. La precisión y escalabilidad del modelo no iterativo para DG MOSFET se inspecciona en comparación con datos numéricos de simulaciones TCAD nanoMOS para longitudes de canal desde 6 nm hasta 30 nm. Con la ayuda de este modelo se realizan investigaciones sobre los efectos de canal corto y de la temperatura. Los resultados del modelo analítico de FET-túnel se verifican con datos numéricos provenientes de simulaciones TCAD Sentaurus.
Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained more importance specially for compact model developers. The non-equilibrium Green's function (NEGF) has become a state-of-the-art method for nano-scaled device simulation in the past years. In the sense of a multi-scale simulation approach it is necessary to bridge the gap between compact models with their fast and efficient calculation of the device current, and numerical device models which consider quantum effects of nano-scaled devices. In this work, a NEGF based analytical model for nano-scaled double-gate (DG) MOSFETs and Tunneling-FETs is introduced. The model consists of a closed-form potential solution of a classical compact model and a 1D NEGF formalism for calculating the device current, taking into account quantum mechanical effects. The potential calculation omits the iterative coupling and allows the straightforward current calculation. The model is based on a ballistic NEGF approach whereby backscattering effects are considered as second order effect in a closed-form. The accuracy and scalability of the non-iterative DG MOSFET model is inspected in comparison with numerical nanoMOS TCAD data for channel lengths from 6 nm to 30 nm. With the help of this model investigations on short-channel and temperature effects are performed. The results of the analytical Tunneling-FET model are verified with numerical TCAD Sentaurus simulation data.
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Croy, Alexander. "Zeitaufgelöster Elektronentransport in Quantendotsystemen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-39486.

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Der Elektronentransport durch Nanostrukturen bietet eine Perspektive auf interessante Anwendungen und neue Einsichten in die Nichtgleichgewichtsdynamik von Elektronen in komplexen Umgebungen. Quantendotsysteme erlauben im Speziellen ein hohes Maß an Kontrolle ihrer Eigenschaften und ermöglichen damit detaillierte Untersuchungen. Das wachsende Interesse an zeitaufgelöstem Elektronentransport in diesen Systemen erklärt sich vor allem durch die rasanten Fortschritte bei der experimentellen Realisierung von pulsinduziertem Transport. Zur Beschreibung und Interpretation dieser Experimente bedarf es der Entwicklung neuer theoretischer Zugänge und Berechnungsverfahren. In dieser Arbeit werden zwei Propagationsmethoden zur numerischen Beschreibung von zeitaufgelöstem Elektronentransport entwickelt. Hierbei wird einerseits von einer Einteilchenbeschreibung mit Nichtgleichgewichts-Green-Funktionen (NEGF) und andererseits von einer Vielteilchenbeschreibung, basierend auf verallgemeinerten Quantenmastergleichungen für die reduzierte Vielteilchendichtematrix, ausgegangen. Das Konzept ist in beiden Fällen ähnlich: Im ersten Schritt der Herleitung werden Hilfsgrößen eingeführt und gleichberechtigt zum reduzierten Zustand des Systems behandelt. Eine Hilfsmodenentwicklung der Fermi-Funktion ermöglicht im zweiten Schritt die numerische Berechnung mit den hergeleiteten Bewegungsgleichungen. Mit Hilfe einer Partialbruchzerlegung wird eine Entwicklung der Fermi-Funktion abgeleitet, die sich durch eine wesentlich verbesserte Konvergenz gegenüber bisher bekannten Entwicklungen auszeichnet. Diese Zerlegung erweist sich für die Propagation als effizienter Zugang und kann darüber hinaus bei Berechnungen zur Elektronenstruktur angewendet werden. Obwohl der NEGF-Formalismus eines der Standardverfahren für die Behandlung von Transportdynamik in Nanostrukturen darstellt, ist die Auswahl an numerischen Implementierungen verschwindend gering. Die in dieser Arbeit entwickelte Propagationsmethode stellt eine neue Herangehensweise dar, die im Vergleich zu den bisherigen Zugängen ein günstigeres Skalierungsverhalten aufweist. Anhand von zwei Beispielen wird demonstriert, dass die Methode sowohl auf stochastisch getriebene Systeme als auch auf Situationen mit realistischen Spannungspulsen anwendbar ist. Eine Erweiterung auf wechselwirkende Elektronen wird ausgehend von der Methode der Bewegungsgleichungen abgeleitet. Im Rahmen der Vielteilchenbeschreibung durch die verallgemeinerten Quantenmastergleichungen wird insbesondere der Einfluss von Termen höherer Ordnung untersucht. Hierzu wird, neben der üblichen Quantenmastergleichung zweiter Ordnung, explizit die vierte Ordnung berechnet. Ein Vergleich mit dem NEGF-Formalismus zeigt die Notwendigkeit höhere Ordnungen, zumindest partiell, zu berücksichtigen, da erst hierdurch die Verbreiterung der Energieniveaus aufgrund der Tunnelkopplung an die Reservoirs konsistent beschrieben wird. Dieser Befund wird am Beispiel des stationären und transienten Elektronentransports durch einen Doppelquantendot untermauert. Auf der Basis von numerischen Berechnungen und einem analytisch lösbaren Modell werden die Resultate eines aktuellen Pump-Probe-Experiments zur kohärenten Kontrolle von Ladungs-Qubits in Doppelquantendots interpretiert. Die Anwendungsmöglichkeiten der entwickelten Propagationsmethoden gehen weit über die in der Arbeit betrachteten Beispiele hinaus. Sie erlauben die Beschreibung von neuartigen Transportkonzepten und ermöglichen einen erweiterten Einblick in die Nichtgleichgewichtsdynamik von Elektronen in Nanostrukturen.
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Nier, Olivier. "Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT141/document.

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La conception des dispositifs nanométriques CMOS apporte de nouveaux défis à la communauté TCAD. En effet, de nos jours, les améliorations des performances des transistors ne sont plus simplement dû à une simple diminution des dimensions des dispositifs, mais aussi à l'introduction de boosters de technologies tels que des nouvelles architectures (FDSOI, trigate), des oxydes de grille à forte permittivité, l'ingénierie de la contrainte ou de nouveaux matériaux de canal (Ge, III-V). Pour faire face à tous ces nouveaux défis technologiques, la modélisation TCAD (Technology Computer Aided Design) est un outil puissant pour guider le développement mais aussi pour réduire les coûts. Dans ce contexte, ce travail de thèse vise à améliorer la modélisation TCAD pour les technologies 28/14 et 10FDSOI, avec une attention particulière sur les impacts des contraintes mécaniques sur leurs performances. Dans un premier temps, les différents mécanismes impactant la mobilité des technologies FDSOI ont été étudiés en détail. Les modèles implémentés dans des outils de simulations avancés (NEGF, Multi subbands Monte Carlo, Kubo-Greenwood) sont étudiés, comparés et des développements du logiciel interne à STMicroelectronics (UTOXPP) sont proposés. Dans un second temps, une approche « top down » a été mis en place. Elle consiste à calibrer les modèles TCAD empiriques non pas sur des mesures mais sur des outils de simulations avancés (Kubo-Greenwood). Les modèles TCAD calibrés montrent de très bons accords avec les mesures de mobilité (split-CV) en variant la température, la polarisation du substrat et l’épaisseur de l’IL (Interfacial layer). Dans un troisième temps, les méthodes utilisées lors de cette thèse pour modéliser les contraintes induites par le procédé de fabrications sont décrites. Enfin, la dernière partie concerne la modélisation TCAD des technologies 28 et 14FDSOI. Des simulations mécaniques sont effectuées pour modéliser les profils de contraintes dans les transistors. Des solutions pour optimiser la configuration des contraintes dans le canal pour ces technologies sont proposées
The design of nanoscale CMOS devices brings new challenges to TCAD community. Indeed, nowadays, CMOS performances improvements are not simply due to device scaling but also to the introduction of new technology “boosters” such as new transistors architectures (FDSOI, trigate), high-k dielectric gate stacks, stress engineering or new channel material (Ge, III-V). To face all these new technological challenges, Technology Computer Aided Design (TCAD) is a powerful tool to guide the development of advanced technologies but also to reduce development time and cost. In this context, this PhD work aimed at improving the modeling for 28/14 and 10FDSOI technologies, with a particular attention on mechanical strain impacts. In the first section, a summary of the main models implemented in state of the art device simulators is performed. The limitations and assumptions of these models are highlighted and developments of the in-house STMicroelectronics KG solvers are discussed. In the second section, a “top down” approach has been set-up. It has consisted in using advanced physical-based solvers as a reference for TCAD empirical models calibration. Calibrated TCAD reproduced accurately split-CV mobility measurements varying the temperature, the back bias and the Interfacial Layer (IL) thickness. The third section deals with a description of the methodologies used during this thesis to model stress induced by the process flow. Simulations are compared to nanobeam diffraction (NBD) strain measurements. The use and calibration of available TCAD models to efficiently model the impact of stress on mobility in a large range of stress (up to 2GPa) is also discussed in this section. The last part deals with TCAD modeling of advanced CMOS devices for 28/14 and 10FDSOI technology development. Mechanical simulations are performed to model the stress profile in transistors and several solutions to optimize the stress configuration in sSOI and SiGe-based devices have been presented
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Nadimi, Ebrahim. "Quantum Mechanical and Atomic Level ab initio Calculation of Electron Transport through Ultrathin Gate Dielectrics of Metal-Oxide-Semiconductor Field Effect Transistors." Doctoral thesis, Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800477.

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The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanical effects, which are no longer negligible. Gate tunneling current is one of such effects, that is responsible for high power consumption and high working temperature in microprocessors. This in turn put limits on further down scaling of devices. Therefore modeling and calculation of tunneling current is of a great interest. This work provides a review of existing models for the calculation of the gate tunneling current in MOSFETs. The quantum mechanical effects are studied with a model, based on a self-consistent solution of the Schrödinger and Poisson equations within the effective mass approximation. The calculation of the tunneling current is focused on models based on the calculation of carrier’s lifetime on quasi-bound states (QBSs). A new method for the determination of carrier’s lifetime is suggested and then the tunneling current is calculated for different samples and compared to measurements. The model is also applied to the extraction of the “tunneling effective mass” of electrons in ultrathin oxynitride gate dielectrics. Ultrathin gate dielectrics (tox<2 nm) consist of only few atomic layers. Therefore, atomic scale deformations at interfaces and within the dielectric could have great influences on the performance of the dielectric layer and consequently on the tunneling current. On the other hand the specific material parameters would be changed due to atomic level deformations at interfaces. A combination of DFT and NEGF formalisms has been applied to the tunneling problem in the second part of this work. Such atomic level ab initio models take atomic level distortions automatically into account. An atomic scale model interface for the Si/SiO2 interface has been constructed and the tunneling currents through Si/SiO2/Si stack structures are calculated. The influence of single and double oxygen vacancies on the tunneling current is investigated. Atomic level distortions caused by a tensile or compression strains on SiO2 layer as well as their influence on the tunneling current are also investigated
Die vorliegende Arbeit beschäftigt sich mit der Berechnung von Tunnelströmen in MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). Zu diesem Zweck wurde ein quantenmechanisches Modell, das auf der selbstkonsistenten Lösung der Schrödinger- und Poisson-Gleichungen basiert, entwickelt. Die Gleichungen sind im Rahmen der EMA gelöst worden. Die Lösung der Schrödinger-Gleichung unter offenen Randbedingungen führt zur Berechnung von Ladungsverteilung und Lebensdauer der Ladungsträger in den QBSs. Der Tunnelstrom wurde dann aus diesen Informationen ermittelt. Der Tunnelstrom wurde in verschiedenen Proben mit unterschiedlichen Oxynitrid Gatedielektrika berechnet und mit gemessenen Daten verglichen. Der Vergleich zeigte, dass die effektive Masse sich sowohl mit der Schichtdicke als auch mit dem Stickstoffgehalt ändert. Im zweiten Teil der vorliegenden Arbeit wurde ein atomistisches Modell zur Berechnung des Tunnelstroms verwendet, welche auf der DFT und NEGF basiert. Zuerst wurde ein atomistisches Modell für ein Si/SiO2-Schichtsystem konstruiert. Dann wurde der Tunnelstrom für verschiedene Si/SiO2/Si-Schichtsysteme berechnet. Das Modell ermöglicht die Untersuchung atom-skaliger Verzerrungen und ihren Einfluss auf den Tunnelstrom. Außerdem wurde der Einfluss einer einzelnen und zwei unterschiedlich positionierter neutraler Sauerstoffleerstellen auf den Tunnelstrom berechnet. Zug- und Druckspannungen auf SiO2 führen zur Deformationen in den chemischen Bindungen und ändern den Tunnelstrom. Auch solche Einflüsse sind anhand des atomistischen Modells berechnet worden
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Paulla, Kirti Kant K. "Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects." Wright State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=wright1377374382.

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PENAZZI, GABRIELE. "Development of an atomistic/continous simulation tool for nanoelectronic devices." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2010. http://hdl.handle.net/2108/1335.

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La simulazione dei moderni dispositivi elettronici è una grande sfida per la comunità ingegneristica. L'enorme progresso nei processi di fabbricazione ha permesso una riduzione della dimensione dei dispositivi talmente spinta che fenomeni tipici della scala di lunghezza nanometrica giocano un ruolo cruciale. Inoltre stiamo assistendo a un grande sforzo teso ad esplorare soluzioni tecnologiche alternatice ai tradizionali dispositivi a semiconduttore. Questo sforzo è rivolto verso la frontiera dell'elettronica molecolare, dei polimeri semiconduttori, delle strutture autoassemblanti, dei materiali quasi-unidimensionali e bidimensionali. In uno scenario simile è cruciale sviluppare strumenti di simulazione modulari, capaci di connettere modelli fisici differenti su scale geometriche differenti. Gli effetti quantistici giocano un ruolo fondamentale ed è necessario includere modelli che li descrivano, evitando però la tipica esplosione di complessità nell'implementazione di suddetti modelli. Per realizzare ciò è necessario andare verso un approccio multiscala, approccio già utilizzato con successo in meccanica statica. Lo scopo di questo lavoro è includere descrizioni e modelli atomistici in TiberCAD, un codice TCAD per la simulazione di dispositivi optoelettronici che può vantare eccellenti strumenti per interfacciare diversi modelli fisici in un ambiente multifisica/multiscala. I modelli atomistici inclusi sono utili al calcolo delle deformazioni elastiche, della geometria della struttura e degli stati elettronici. Infine, viene presentata anche una tecnica inedita per una descrizione quantistica efficiente del trasporto di carica. Questo lavoro vuole contrubuire a rendere TiberCAD uno strumento di riferimento per la simulazione di dispositivi optoelettronici su nanoscala.
The simulation of novel optoelectronic devices is a great challenge for the engineering community. The enoromous progress in device fabrication technology allowed such a massive downscaling that geometrical feature in the nanoscale play a crucial role. Furthermore we have a great effort in exploring alternative solutions respect to more traditional semiconductor devices. It involves molecular electronic, semiconductive polymers, self-assembled structures, quasi-one dimensional and two dimensional materials. In such scenario it's crucial to develop modular simulation tools able to connect different physical models on different length scales. Quantum effect play an important role and we need to take them into account, avoiding anyway an explosion of the computational complexity. Thus it's needed to go in the direction of a multiscale approach, which is already applied with success in mechanical science. The goal of this work is to include atomistic description and atomistic models in TiberCAD, a Technology CAD code for simulation of optoelectronic devices which can rely on excellent instruments for interfacing different models in a multyphisics/multiscale environment. Atomistic models for the calculation of strain, structure geometry and electronic states have been included. A novel technique for describing quantum transport with an efficient algorithm is also presented. These work wants to push TiberCAD to be a reference tool for calculation of complex optoeletronic devices at the nanoscale.
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Jones, Alexander M. "Onset of Spin Polarization in Four-Gate Quantum Point Contacts." University of Cincinnati / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1485188708345005.

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Oeiras, Rodrigo Yoshikawa. "Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios." Universidade Federal de São Carlos, 2012. https://repositorio.ufscar.br/handle/ufscar/4946.

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Made available in DSpace on 2016-06-02T20:15:25Z (GMT). No. of bitstreams: 1 4684.pdf: 17668622 bytes, checksum: 0bf46e77c798ab290c251436167def28 (MD5) Previous issue date: 2012-09-05
Financiadora de Estudos e Projetos
In this thesis, we study new materials derived from graphene, like nanowires and nanoribbons, with numerical calculations based on the density functional theory (DFT) and the non-equilibrium Green functions (NEGF). We will discuss these theories in general and we remark that these theories are based on quantum mechanical. The results of this study indicate that the carbon ribbons and carbon wires present interesting and not predictable structural properties. The analysis of the density of stated (DOS) and its variants (LDOs, PDOS, and COOP), provides the basis for understanding the structural properties and the electronic structure of the wires and ribbons. Whenever possible, we compare the results obtained with DFT and NEGF with simpler theories, such as the valence orbital theory and the molecular orbital theory. The results show that the transport current is robust and presents an anisotropy in transmission of electrons, indicating these materials are candidates for fabrication of electronic devices, such as transistors.
Nesta tese, estudamos novos materiais derivados de grafeno, as nanofitas e os nanofios de carbono, com o uso de cálculos numéricos baseados na teoria do funcional da densidade (DFT) e na teoria de funções de Green fora do equilíbrio (NEGF). Abordaremos estas teorias de forma geral na tese e ressaltamos que são teorias baseadas em mecânica quântica. Os resultados que obtivemos deste estudo indicam que as fitas e os fios de carbono apresentam propriedades estruturais interessantes e não previsíveis. A análise da densidade de estados (DOS) e suas variantes (LDOS, PDOS e COOP), permitem o entendimento das propriedades estruturais e eletrônicas que os fios e fitas apresentam. Sempre que possível, comparamos os resultados obtidos com a DFT e a NEGF com teorias mais simples, tais como a teoria de orbital de valência e a teoria do orbital molecular. Os resultados de transporte mostram que estas estruturas apresentam uma corrente robusta e com uma anisotropia na transmissão de elétrons, indicando estes materiais como candidatos para fabricação de dispositivos eletrônicos, tais como transistores.
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Kruglyak, Yu A. "Non-Equilibrium Green’s Function Method in Matrix Representation and Model Transport Problems of Nanoelectronics." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35352.

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Non-equilibrium Green’s functions method in matrix representation is presented and applied to model transport problems for 1D and 2D conductors using a nearest neighbor orthogonal tight-binding model in the frame of the «bottom-up» approach of modern nanoelectronics. Simple methods to account for electric contacts in Schrödinger equation to solve quantum electron transport problems are given. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35352
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Aminpour, Maral. "Theoretical Studies of Nanostructure Formation and Transport on Surfaces." Doctoral diss., University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/6239.

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This dissertation undertakes theoretical and computational research to characterize and understand in detail atomic configurations and electronic structural properties of surfaces and interfaces at the nano-scale, with particular emphasis on identifying the factors that control atomic-scale diffusion and transport properties. The overarching goal is to outline, with examples, a predictive modeling procedure of stable structures of novel materials that, on the one hand, facilitates a better understanding of experimental results, and on the other hand, provide guidelines for future experimental work. The results of this dissertation are useful in future miniaturization of electronic devices, predicting and engineering functional novel nanostructures. A variety of theoretical and computational tools with different degrees of accuracy is used to study problems in different time and length scales. Interactions between the atoms are derived using both ab-initio methods based on Density Functional Theory (DFT), as well as semi-empirical approaches such as those embodied in the Embedded Atom Method (EAM), depending on the scale of the problem at hand. The energetics for a variety of surface phenomena (adsorption, desorption, diffusion, and reactions) are calculated using either DFT or EAM, as feasible. For simulating dynamic processes such as diffusion of ad-atoms on surfaces with dislocations the Molecular Dynamics (MD) method is applied. To calculate vibrational mode frequencies, the infinitesimal displacement method is employed. The combination of non-equilibrium Green's function (NEGF) and DFT is used to calculate electronic transport properties of molecular devices as well as interfaces and junctions.
Ph.D.
Doctorate
Physics
Sciences
Physics
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Books on the topic "NEGF"

1

Zamora, Miguel Ángel. Nego. Barcelona: Muntaner Editors, 2000.

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Green, Sara. NERF. Minneapolis, MN: Bellwether Media, Inc., 2016.

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ill, Schoenherr Ian, ed. Newf. New York: Philomel Books, 1992.

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Vasil, Manov. Apostolŭt: Za nego i ot nego. Sofii͡a︡: Nar. mladezh, 1988.

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Kalchev, Ivan Petrov. Sartr: Za nego i ot nego. Sofii͡a︡: Biblioteka "Nov den", 1993.

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Villa de Noailles (Hyères, France) and Blanc Jean-Pierre conservateur, eds. Neuf architectes, neuf propositions pour habiter. Paris]: Archibooks+Sautereau éditeur, 2012.

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Robert, Pinget. Du nerf. Paris: Editions de Minuit, 1990.

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Bermudes, Nathalie. Neuf lunes. Paris: SW-Télémaque, 2005.

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Evanovich, Janet. Flambant neuf. Paris: Pocket, 2007.

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Dzhantyg, Tambyĭ. Zhʺogʺo nėf. Myekʺuapė: Adygė Respublikėm itkhylʺ tedzapḣ, 1995.

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Book chapters on the topic "NEGF"

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Camsari, Kerem Y., Shuvro Chowdhury, and Supriyo Datta. "The Nonequilibrium Green Function (NEGF) Method." In Springer Handbook of Semiconductor Devices, 1583–99. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79827-7_44.

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Martinez, A., A. Asenov, and M. Pala. "NEGF for 3D Device Simulation of Nanometric Inhomogenities." In Nanoscale CMOS, 335–80. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118621523.ch10.

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Klimeck, Gerhard. "NEMO 1-D: the first NEGF-based TCAD tool." In Simulation of Semiconductor Processes and Devices 2004, 9–12. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_2.

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Verma, Chhaya, and Jeetendra Singh. "NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices." In Sub-Micron Semiconductor Devices, 181–92. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003126393-12.

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Mukherjee, Swarnadip, and Bhaskaran Muralidharan. "Type-II Superlattice Infrared Photodetector (T2SL IRPD) Miniband Modeling: An Atomistic NEGF Study." In Springer Proceedings in Physics, 1039–45. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_159.

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Bonnefoy, Yves. "Mille neuf cent dix-neuf." In Yeats Annual, 186–90. London: Palgrave Macmillan UK, 1988. http://dx.doi.org/10.1007/978-1-349-07948-3_8.

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Sarti, Giulio C. "NELF Model." In Encyclopedia of Membranes, 1–7. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-40872-4_408-2.

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Ratner, L., and T. M. J. Niederman. "Nef." In Transacting Functions of Human Retroviruses, 169–208. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-78929-8_10.

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Miestamo, Matti. "Negation." In Handbook of Pragmatics, 1–25. Amsterdam: John Benjamins Publishing Company, 2006. http://dx.doi.org/10.1075/hop.10.neg1.

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Miestamo, Matti. "Negation." In Handbook of Pragmatics, 1–25. Amsterdam: John Benjamins Publishing Company, 2001. http://dx.doi.org/10.1075/hop.5.neg1.

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Conference papers on the topic "NEGF"

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Datta. "The NEGF method: capabilities and challenges." In Electrical Performance of Electronic Packaging. IEEE, 2004. http://dx.doi.org/10.1109/iwce.2004.1407323.

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Karner, M., O. Baumgartner, M. Pourfath, M. Vasicek, and H. Kosina. "Investigation of a MOSCAP using NEGF." In International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422272.

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Hong, Sung-Min, and Phil-Hun Ahn. "AC NEGF Simulation of Nanosheet MOSFETs." In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2020. http://dx.doi.org/10.23919/sispad49475.2020.9241656.

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Hopkins, Patrick E., Pamela M. Norris, Mikiyas S. Tsegaye, and Avik W. Ghosh. "Predicting Phonon Thermal Conductance at Atomic Junctions: Nonequilibrium Green’s Function Approach Compared to Semiclassical Methods." In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-66691.

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Phonon thermal conductance, λ, in nanostructures is a thermophysical property that is becoming increasingly difficult to accurately predict, especially as thermal management at interfaces of different materials is becoming a major engineering concern. The most widely used models for λ prediction are based on the Boltzmann Transport Equation (BTE), and the when junctions between two different materials enter the picture, the most common BTE-based models to predict the interfacial conductance are the Acoustic Mismatch Model (AMM) and Diffuse Mismatch Model (DMM). The models are developed with equilibrium assumptions. However, thermal transport is clearly nonequilibrium phenomenon. Recently, the Nonequilibrium Green’s Function (NEGF) formalism has been extended to phonon transport. The NEGF formalism is rooted in nonequilibrium quantum transport theory, making it ideal to study energy transfer applications, especially in nanosystems where the concept of thermal equilibrium breaks down due to the small dimensions of the transport regions. The purpose of this paper is to derive, from first principles, the NEGF formalism of thermal conductivity, and compare the assumptions of this formalism to the semi-classical Boltzmann models. The NEGF formalism is applied to a 1D atomic chain with varying masses and compared to similar predictions from BTE-based models.
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Farhana, Soheli, A. H. M. Zahirul Alam, Sheroz Khan, and S. M. A. Motakabber. "NEGF-based transport phenomena for semiconduncting CNTFET." In 2015 5th National Symposium on Information Technology: Towards New Smart World (NSITNSW). IEEE, 2015. http://dx.doi.org/10.1109/nsitnsw.2015.7176386.

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Musho, T. D., S. M. Claiborne, and D. G. Walker. "NEGF Quantum Simulation of Field Emission Devices." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44504.

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Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission devices from a quantum point of view, using a novel non-equilibrium Green’s function (NEGF) approach previously applied to modeling solid-state electronic devices. Findings from this research confirm non-linearities in the FN curve and provide alternative explanations to discrepancies between standard FN theory.
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Cavassilas, Nicolas, Fabienne Michelini, Marc Bescond, and Thibault Joie. "Hot-carrier solar cell NEGF-based simulations." In SPIE OPTO, edited by Alexandre Freundlich, Laurent Lombez, and Masakazu Sugiyama. SPIE, 2016. http://dx.doi.org/10.1117/12.2212612.

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Takeda, H., and N. Mori. "Mode-coupling effects in NEGF device simulation." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.p9-10.

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Hopkins, Patrick E., Pamela M. Norris, Mikiyas S. Tsegaye, and Avik Ghosh. "Phonon Thermal Boundary Conductance in 1-D Chains: Comparison Between the Semiclassical and Nonequilibrium Green’s Function Formalisms." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52233.

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Thermal boundary conductance (hBD) across solid interfaces is a limiting factor in many applications, especially as characteristic length scales of devices are decreasing to the nanoscale. Accurate prediction of this interfacial energy transfer, however, is difficult. The most widely used model for hBD prediction is the diffuse mismatch model (DMM), which considers the transmission of the incident phonon intensity across the interface for the case of thermal equilibrium between the two materials adjacent to the interface. This semi-classical model is limited by the equilibrium assumption, and breaks down for the case of two similar materials comprising the interface. Recently, the Nonequilibrium Green’s Function (NEGF) formalism has been extended to phonon transport. The NEGF formalism is rooted in nonequilibrium transport theory, making it ideal to study energy transfer applications, especially in nanosystems where the concept of thermal equilibrium breaks down due to the small dimensions of the transport regions. The purpose of this paper is to derive, from first principles, the NEGF formalism of thermal conductance, and compare the assumptions of this formalism to the semi-classical DMM assumptions. The NEGF formalism is derived for two simple 1-D examples, and the 1-D conductance and phonon transmission is calculated for a 1-D atomic chains of Si and compared to DMM calculations and experimental data.
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Pal, Himadri S., Dmitri E. Nikonov, Raseong Kim, and Mark S. Lundstrom. "Electron-phonon scattering in planar MOSFETs with NEGF." In 2010 Silicon Nanoelectronics Workshop (SNW). IEEE, 2010. http://dx.doi.org/10.1109/snw.2010.5562595.

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Reports on the topic "NEGF"

1

Zhang S. Y., H. C. Hseuh, and T. Roser. NEG Coating at RHIC. Office of Scientific and Technical Information (OSTI), June 2003. http://dx.doi.org/10.2172/1061692.

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Zhang S. Y., H. C. Hseuh, W. Fischer, H. Huang, and T. Roser. NEG Coating Application at RHIC. Office of Scientific and Technical Information (OSTI), October 2005. http://dx.doi.org/10.2172/1061811.

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Zhang S. Y. Application of Saturated NEG at Interaction Regions. Office of Scientific and Technical Information (OSTI), September 2007. http://dx.doi.org/10.2172/1061880.

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Buckle, J. L., J. M. Carson, M. Coyle, R. Dumont, K L Ford, B. J. A. Harvey, and G. Delaney. Cree Lake South geophysical survey, Neff Lake, NTS 74 F/01, Saskatchewan. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2008. http://dx.doi.org/10.4095/225431.

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Grace, R., J. Gifford, T. Leeds, and S. Bauer. New England Wind Forum: A Wind Powering America Project - Newsletter #6 - September 2010, (NEWF). Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/989419.

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Buckle, J. L., J. M. Carson, M. Coyle, K. L. Ford, G. Delaney, and W. Slimmon. Geophysical Series - Neff Lake 74 F/1 and 74 F/2, Saskatchewan, Cree Lake geophysical survey, Saskatchewan. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2007. http://dx.doi.org/10.4095/223981.

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Bumpers, Harvey L. Effects of a Viral Peptide (Nef) on Growth and Metastasis of Human Breast Cancer. Fort Belvoir, VA: Defense Technical Information Center, September 2009. http://dx.doi.org/10.21236/ada512002.

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8

Cheng, Yeeva, and Cara Krause-Perrotta. Guide d’utilisation de la liste de contrôle de la politique A3. Population Council, 2022. http://dx.doi.org/10.31899/sbsr2022.1021.

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L'Atlas des Adolescents pour l'Action (A3) est une suite d'outils qui résume la vie et les besoins des adolescents du monde entier afin de promouvoir une prise de décision fondée sur des données probantes. Grâce à des données accessibles et faciles à saisir en un seul clic, l'A3 comble le fossé entre les décideurs et les données factuelles afin d'éclairer les politiques et les programmes. La liste de contrôle des politiques A3, créée par le GIRL Center du Population Council, présente une liste de politiques nationales relatives aux adolescents dans neuf domaines thématiques, et indique si les pays ont adopté chaque politique. La liste de contrôle présente un aperçu des engagements pris pour atteindre le bien-être des adolescents par le biais de politiques axées sur les adolescents. En juillet 2022, la liste de contrôle des politiques comprend 56 politiques, qui ont été suivies pour 113 pays à revenu faible ou intermédiaire (PRFM). Cette liste de politiques n'est pas exhaustive, et des politiques supplémentaires seront ajoutées à la liste de contrôle chaque année. Ce guide fournit un aperçu étape par étape de la manière d'utiliser la liste de contrôle des politiques A3.
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9

Premises - Branches - Port Moresby - View of Harbour (neg only) - 1966. Reserve Bank of Australia, March 2021. http://dx.doi.org/10.47688/rba_archives_pn-006065.

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Premises - Branches - Port Moresby - View of Harbour (neg only) - 1966. Reserve Bank of Australia, March 2021. http://dx.doi.org/10.47688/rba_archives_pn-006063.

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