Log in

Relevant bibliographies by topics / Ni(GeSn) / Journal articles

To see the other types of publications on this topic, follow the link: Ni(GeSn).

Journal articles on the topic 'Ni(GeSn)'

Author: Grafiati

Published: 25 May 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 16 journal articles for your research on the topic 'Ni(GeSn).'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "Impact and behavior of Sn during the Ni/GeSn solid-state reaction." Journal of Applied Crystallography 53, no. 3 (2020): 605–13. http://dx.doi.org/10.1107/s1600576720003064.

Full text

Abstract:

Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results sho

APA, Harvard, Vancouver, ISO, and other styles

2

Abdi, S., S. Assali, M. R. M. Atalla, S. Koelling, J. M. Warrender, and O. Moutanabbir. "Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge_0.89Sn_0.11." Journal of Applied Physics 131, no. 10 (2022): 105304. http://dx.doi.org/10.1063/5.0077331.

Full text

Abstract:

The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all processing steps of GeSn devices is essential to avoid possible material degradation. This constraint is exacerbated by the need for higher Sn contents exceeding 8 at. % along with an enhanced strain relaxation to achieve efficient mid-infrared devices. Herein, as a low thermal budget solution for post-epitaxy processing, we elucidate the effects of laser therma

APA, Harvard, Vancouver, ISO, and other styles

3

Coudurier, Nicolas, Andrea Quintero, Virginie Loup, et al. "Plasma surface treatment of GeSn layers and its subsequent impact on Ni / GeSn solid-state reaction." Microelectronic Engineering 257 (March 2022): 111737. http://dx.doi.org/10.1016/j.mee.2022.111737.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Li, H., H. H. Cheng, L. C. Lee, C. P. Lee, L. H. Su, and Y. W. Suen. "Electrical characteristics of Ni Ohmic contact on n-type GeSn." Applied Physics Letters 104, no. 24 (2014): 241904. http://dx.doi.org/10.1063/1.4883748.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, Vincent Reboud, and Philippe Rodriguez. "Ni-based metallization of GeSn layers: A review and recent advances." Microelectronic Engineering 269 (January 2023): 111919. http://dx.doi.org/10.1016/j.mee.2022.111919.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Jheng, Li Sian, Hui Li, Chiao Chang, Hung Hsiang Cheng, and Liang Chen Li. "Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn." AIP Advances 7, no. 9 (2017): 095324. http://dx.doi.org/10.1063/1.4997348.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Junk, Yannik, Mingshan Liu, Marvin Frauenrath, et al. "Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs." ECS Meeting Abstracts MA2022-01, no. 29 (2022): 1285. http://dx.doi.org/10.1149/ma2022-01291285mtgabs.

Full text

Abstract:

In recent years, Ge-based group-IV alloys (GeSn, SiGeSn) have received a significant amount of attention as candidates to replace Silicon for future low power and high performance nanoelectronics [1]. The interest in these materials stems primarily from the fact that, by varying the Sn-content of the alloy, it is possible to precisely tune its bandgap from indirect to direct [2], which even opens up the possibility to switch the carrier transport from larger mass low mobility L-valley electrons to the lower mass and high mobility Γ-valley electrons. Adding Si atoms into GeSn alloys enables add

APA, Harvard, Vancouver, ISO, and other styles

8

Quintero, A., F. Mazen, P. Gergaud, et al. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation." Journal of Applied Physics 129, no. 11 (2021): 115302. http://dx.doi.org/10.1063/5.0038253.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Zhang, Xu, Dongliang Zhang, Jun Zheng, et al. "Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn." Solid-State Electronics 114 (December 2015): 178–81. http://dx.doi.org/10.1016/j.sse.2015.09.010.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Quintero, Andrea, Patrice Gergaud, Joris Aubin, Jean-Michel Hartmann, Vincent Reboud, and Philippe Rodriguez. "Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase." Journal of Applied Crystallography 51, no. 4 (2018): 1133–40. http://dx.doi.org/10.1107/s1600576718008786.

Full text

Abstract:

The Ni/Ge0.9Sn0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge0.9Sn0.1) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the ∊-Ni5(Ge0.9Sn0.1)

APA, Harvard, Vancouver, ISO, and other styles

11

Liu, Y., H. Wang, J. Yan, and G. Han. "Reduction of Formation Temperature of Nickel Mono-Stanogermanide [Ni(GeSn)] by the Incorporation of Tin." ECS Solid State Letters 3, no. 2 (2013): P11—P13. http://dx.doi.org/10.1149/2.001402ssl.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy." ECS Transactions 98, no. 5 (2020): 365–75. http://dx.doi.org/10.1149/09805.0365ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Quintero Colmenares, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy." ECS Meeting Abstracts MA2020-02, no. 24 (2020): 1750. http://dx.doi.org/10.1149/ma2020-02241750mtgabs.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Noroozi, M., M. Moeen, A. Abedin, M. S. Toprak, and H. H. Radamson. "Effect of strain on Ni-(GeSn)x contact formation to GeSn nanowires." MRS Proceedings 1707 (2014). http://dx.doi.org/10.1557/opl.2014.559.

Full text

Abstract:

ABSTRACTIn this study, the formation of Ni-(GeSn)x on strained and relaxed Ge1−xSnx (0.01≤x≤ 0.03) nanowires in contact areas has been investigated. The epi-layers were grown at different temperatures (290 to 380°C) by RPCVD technique. The strain in GeSn layers tailored through carefully chosen of growth parameters and virtual substrate. The nanowires were fabricated through both I-line and dry-etching. 15 nm Ni was deposited either on the contact areas or whole length of nanowires. The wires went through rapid thermal annealing at intervals of 360 to 550°C for 30s in N2 ambient. The results s

APA, Harvard, Vancouver, ISO, and other styles

15

Quintero, Andrea, Pablo Acosta Alba, Jean-Michel Hartmann, et al. "Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys." IEEE Journal of the Electron Devices Society, 2023, 1. http://dx.doi.org/10.1109/jeds.2023.3332094.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Gantet, Claire. "Ni pédants, ni amateurs?" Gesnerus, 2016. http://dx.doi.org/10.24894/gesn-fr.2016.73010.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!