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Academic literature on the topic 'Nickel Reactive Inks'
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Journal articles on the topic "Nickel Reactive Inks"
Renn, Michael J., Matthew Schrandt, Jaxon Renn, and James Q. Feng. "Localized Laser Sintering of Metal Nanoparticle Inks Printed with Aerosol Jet® Technology for Flexible Electronics." Journal of Microelectronics and Electronic Packaging 14, no. 4 (October 1, 2017): 132–39. http://dx.doi.org/10.4071/imaps.521797.
Full textSalimi, Ahmad, Zhaleh Jamali, Saman Atashbar, Saleh Khezri, Amir M. Ghorbanpour, and Nahid Etefaghi. "Pathogenic Mechanisms and Therapeutic Implication in Nickel-Induced Cell Damage." Endocrine, Metabolic & Immune Disorders - Drug Targets 20, no. 7 (September 9, 2020): 968–84. http://dx.doi.org/10.2174/1871530320666200214123118.
Full textFievet, F., J. P. Lagier, and M. Figlarz. "Preparing Monodisperse Metal Powders in Micrometer and Submicrometer Sizes by the Polyol Process." MRS Bulletin 14, no. 12 (December 1989): 29–34. http://dx.doi.org/10.1557/s0883769400060930.
Full textDissertations / Theses on the topic "Nickel Reactive Inks"
Rabhi, Selma. "Réaction à l'état solide entre un film de nickel et un substrat de type III-V." Electronic Thesis or Diss., Aix-Marseille, 2019. http://theses.univ-amu.fr.lama.univ-amu.fr/190612_RABHI_105lfcsln311pyot691zwwqcp673guk_TH.pdf.
Full textThe aim of this thesis is to study the phases formed during the solid-state reaction between a Ni film and an III-V type semiconductor substrate by reactive-diffusion, in order to understand and predict the phenomena involved in the Ni / In0.53Ga0.47As contact. Indeed, this compound present a technological interest for nanoelectronics because In0.53Ga0.47As can advantageously be substituted for Si. For this, we have studied the nature and the sequence of the phases formed for the two systems Ni / GaAs and Ni / InAs. Where Ni is deposited by sputtering. The Ni3GaAs and Ni3InAs phases are the first phases formed; they are in epitaxy with the substrate and have the same hexagonal structure. The results obtained show that the Ni layer is epitaxial with the GaAs substrate for low-deposited thicknesses, which differs from the greater thicknesses. Moreover, the texture of the Ni3GaAs phase is different from the Ni3InAs phase. At high temperatures (above 400 ° C), we observe for both systems the presence of new phases. These are hexagonal and cubic structures for the Ni / InAs system. We have also observed in this work the formation kinetics of these phases Ni3GaAs and Ni3InAs in thin film. Moreover, conclude that the formation kinetics of the Ni3InAs phase is slower than that of the Ni3GaAs phase
"Formulating a Particle-Free and Low Temperature Nickel Reactive Ink for Inkjet Printing Conductive Features." Master's thesis, 2019. http://hdl.handle.net/2286/R.I.53708.
Full textDissertation/Thesis
Masters Thesis Chemical Engineering 2019