Relevant bibliographies by topics / NiSi

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'NiSi'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "NiSi"

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Lee, Young Pak, Jin Bae Kim, Young Joon Yoo, and Yuri V. Kudryavtsev. "Solid-state reaction in Ni/Si multilayered films, characterized by magneto-optical and optical spectroscopies." International Journal of Materials Research 97, no. 2 (2006): 136–39. http://dx.doi.org/10.1515/ijmr-2006-0023.

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Abstract Solid-state reactions, induced by ion-beam mixing (IBM) and thermal annealing, in Ni/Si multilayered films (MLF) with an overall stoichiometry of Ni2Si, NiSi and NiSi2, and with a constant Ni sublayer thickness (nominally, 3.0 nm), were studied by optical and magneto-optical spectroscopies as well as X-ray diffraction (XRD). The layer mixing was performed with Ar+ ions of an energy of 80 keV and a dose of 1.5 × 1016 Ar+/cm2. It was shown that the IBM leads to structural changes in the Ni/Si MLF, which cannot be easily detected by XRD but are recognized by optical tools. An annealing a
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Sidorenko, Sergey I., Yu N. Makogon, S. M. Voloshko, et al. "Diffusion Formation of Silicide Phases in Ni/Si(001) Nanodimensional Film System." Defect and Diffusion Forum 280-281 (November 2008): 9–14. http://dx.doi.org/10.4028/www.scientific.net/ddf.280-281.9.

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Thermally stimulated solid state reactions in the Ni(10 nm)/Si(001) film system that occur under the annealing in the nitrogen ambient were researched by methods of сross-sectional transmission electron microscopy and scanning electron microscope. It was established that NiSi2 formation consists of several steps: a formation of the NiSi polycrystalline silicide thickness of which twice higher initial thickness of Ni layer; prevailed diffusion of Ni atoms out of NiSi into Si substrate according with lattice mechanism and appearing of exceeding vacancies at grain boundaries; a formation of epita
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Suzuki, Akihiko, and Miwa Suzuki. "Antimicrobial Activity of Lactococcus lactis subsp. lactis Isolated from a Stranded Cuvier’s Beaked Whale (Ziphius cavirostris) against Gram-Positive and -Negative Bacteria." Microorganisms 9, no. 2 (2021): 243. http://dx.doi.org/10.3390/microorganisms9020243.

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In the present study, we isolated and characterized Lactococcus lactis (L. lactis) subsp. lactis from a female Cuvier’s beaked whale (Ziphius cavirostris) stranded in Shizuoka, Japan. Only five isolates (CBW1-5), grown on Lactobacilli de Man Rogosa Sharpe (MRS) agar plates prepared using 50% artificial seawater, were positive in L. lactis species-specific primer PCR. Their 16S rRNA sequences were highly similar to those of L. lactis subsp. lactis JCM 5805T. The Gram reaction, motility, gas production from glucose, catalase production, and growth conditions were consistent with those of the typ
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Blum, Ivan, Alain Portavoce, Lee Chow, Khalid Hoummada, and Dominique Mangelinck. "Diffusion and Redistribution of Boron in Nickel Silicides." Defect and Diffusion Forum 323-325 (April 2012): 415–20. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.415.

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The Diffusion and Solubility of B Implanted in δ-Ni2Si and Nisi Layers Is Studied by SIMS. it Is Observed that both Diffusion and Solubility Are Higher in δ-Ni2Si than Nisi. the Redistribution of B during Ni Silicidation Is Also Studied. the SIMS Profiles Show the Presence of Concentration Step in the Middle of the Final Nisi Layer. this Profile Shape Is Explained in Light of the Results Obtained in Preformed Silicides. the Proposed Model Is Supported by Redistribution Simulations that Can Reproduce the Main Features of the Profile.
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Li, Haiping, and Daniel J. O'Sullivan. "Identification of a nisI Promoter within the nisABCTIP Operon That May Enable Establishment of Nisin Immunity Prior to Induction of the Operon via Signal Transduction." Journal of Bacteriology 188, no. 24 (2006): 8496–503. http://dx.doi.org/10.1128/jb.00946-06.

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ABSTRACT Certain strains of Lactococcus lactis produce the broad-spectrum bacteriocin nisin, which belongs to the lantibiotic class of antimicrobial peptides. The genes encoding nisin are organized in three contiguous operons: nisABTCIP, encoding production and immunity (nisI); nisRK, encoding regulation; and nisFEG, also involved in immunity. Transcription of nisABTCIP and nisFEG requires autoinduction by external nisin via signal transducing by NisRK. This organization poses the intriguing question of how sufficient immunity (NisI) can be expressed when the nisin cluster enters a new cell, b
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Wilson, D. F., and O. B. Cavin. "Thermal expansion behavior of NiSi/NiSi2." Scripta Metallurgica et Materialia 26, no. 1 (1992): 85–88. http://dx.doi.org/10.1016/0956-716x(92)90374-n.

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Portavoce, Alain, Guy Tréglia, Boubekeur Lalmi, et al. "Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion." Solid State Phenomena 172-174 (June 2011): 633–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.633.

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Silicide sequential phase formation during tens-of-nanometer-thick metallic film reaction on Si substrate has been extensively studied. Nevertheless, the reasons of sequential phase formation are still under debate, and have been poorly studied at the atomic scale. Using atomistic kinetic Monte Carlo simulations, we show that considering a binary fcc non-regular solid solution, without diffusion asymmetries, the diffusive reaction of a sub-nanometer-thick film (~5 atomic monolayers) on a semi-infinite substrate leads to the sequential formation of all the phases present in the binary phase dia
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Ji, Gen Shun, Qin Ma, Tie Ming Guo, Qi Zhou, Jian Gang Jia, and Xue Ding Chen. "Phase Evolutions of High Energy Ball Milled Ni-66.7at% Si." Key Engineering Materials 336-338 (April 2007): 2325–27. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.2325.

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The high-energy ball milling of Ni-66.7 at% Si elemental powder mixtures was carried out using a FRITSCH Puluerisette-5 mill. XRD was used to identify the phase evolutions during high-energy ball milling. The XRD patterns showed that the intensities of nickel peaks and silicon peaks gradually decreased with milling time increased from 1 h to 10 h, simultaneously, the peaks of NiSi2 and NiSi appeared. With milling time further increased to 45 h, single phase of NiSi2 formed. New peaks were observed after 75 h milling, which were indexed as FeSi. This reveals that long time high-energy ball mill
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Nikitina, Irina P., Konstantin Vassilevski, Alton B. Horsfall, et al. "Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC." Materials Science Forum 615-617 (March 2009): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.577.

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Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures from 600 to 750 °C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 °C temperature range, while annealing at around 750 °C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman ma
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Mangelinck, Dominique. "Effect of a Third Element on the Stability of NiSi Thin Films on Si." Defect and Diffusion Forum 249 (January 2006): 127–34. http://dx.doi.org/10.4028/www.scientific.net/ddf.249.127.

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The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900oC leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this ele
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Dissertations / Theses on the topic "NiSi"

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Alkhatib, Zainab [Verfasser]. "Charakterisierung der Nisin immunität System NisI und NisFEG von Lactococcus lactis / Zainab Alkhatib." Düsseldorf : Universitäts- und Landesbibliothek der Heinrich-Heine-Universität Düsseldorf, 2014. http://d-nb.info/1061121372/34.

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Lu, Kuo-Chang. "Nano-silicide formation through point contact reaction, NiSi/Si/NiSi and PtSi/Si/PtSi nanowire heterostructures for nanodevices." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1779690511&sid=4&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Moeen, Mahdi. "NiSi(C) Schottky diodes for IR detection." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-108169.

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Un-cooled bolometer arrays have been considered as good choices for detection of infrared waves in the ranges of 3-5μm (MWIR: mid wavelength infrared) and 8-12μm (LWIR: long wavelength infrared). Advantages are found in their relative simplicity of mechanism and design, hence, fabrication cost, when compared to detectors working based on photon detection mechanisms. A temperature dependent resistor (or thermistor) is the core element of a bolometer. The rate of resistance dependency to temperature is a figure-of-merit for thermistor material, acting as the active element in a bolometer. This p
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Allenstein, Frank. "Untersuchungen zum Wachstum dünner NiSi(2-x)Al(x)- und NiSi(2-x)Ga(x)-Schichten auf Si(001)." Doctoral thesis, Universitätsbibliothek Chemnitz, 2007. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200700328.

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Im Rahmen dieser Arbeit wurden erste Untersuchungen zur Herstellung dünner NiSi(2-x)Al(x)- bzw. NiSi(2-x)Ga(x)-Schichten auf Si(001) erbracht. Dazu wurden Ni-Si-Al-Schichten mittels DC-Magnetron-Sputtern sowie Ni-Si-Ga-Schichten mittels Molekular-Strahl-Epitaxie (MBE) abgeschieden und anschließend in Abhängigkeit von der Herstellungsprozedur in einer RTA-Anlage thermisch behandelt. Die so entstandenen Reaktionsschichten wurden anschließend mittels RBS charakterisiert, wobei zusätzlich REM-, TEM-, AES-Tiefenprofil- und XRD-Untersuchungen ergänzend genutzt wurden. Es zeigt sich, dass unabhäng
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Allenstein, Frank. "Untersuchungen zum Wachstum dünner NiSi 2-x Al x - und NiSi 2-x Ga x -Schichten auf Si(001)." [S.l. : s.n.], 2007.

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Zhang, Siai [Verfasser]. "Characterization of Nisin-regulating NisR and Nisin-modifying NisC from Lactococcus lactis / Siai Zhang." Düsseldorf : Universitäts- und Landesbibliothek der Heinrich-Heine-Universität Düsseldorf, 2018. http://d-nb.info/1162339306/34.

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Ehouarne, Loeizig. "Métallisation des mémoires Flash à base de NiSi et d'éléments d'alliages." Phd thesis, Université Paul Cézanne - Aix-Marseille III, 2008. http://tel.archives-ouvertes.fr/tel-00408377.

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L'objectif de cette étude est de regarder l'influence du Pt sur la formation des siliciures de Ni dans le procédé Salicide et en particulier sur la phase basse résistivité NiSi, envisagée par l'industrie pour réaliser les contacts avec les zones actives de transistors de type Flash. Pour cela, nous avons étudié la nature, la séquence et la cinétique des phases formées, d'une part sur le système Ni1-xPtx/Si(100) (0% ≤ x ≤ 30%), et plus particulièrement sur un système intéressant pour certaines de ces propriétés, Ni(13%Pt)/Si(100). Deux types de dépôts ont été confrontés : dépôts réalisés avec u
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Åkerlund, Erik. "'Nisi temere agat' : Francisco Suárez on Final Causes and Final Causation." Doctoral thesis, Uppsala universitet, Avdelningen för teoretisk filosofi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-160816.

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The main thesis of this dissertation is that final causes are beings of reason (‘entia rationis’) in the philosophy of Francisco Suárez (1547-1617). The rejection of final causes is often seen as one of the hallmarks of Early Modern philosophy, marking the transition from an earlier Aristotelian tradition. However, in this dissertation it is shown that final causes had a problematic position already within the Aristotelian tradition. Although other examples of this can be found, this dissertation centers around the thinking of the philosopher and theologian Francisco Suárez and his treatment o
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Ehouarne, Loeizig. "Métallisation des mémoires Flash à base de NiSi et d’éléments d’alliage." Aix-Marseille 3, 2008. http://www.theses.fr/2008AIX30027.

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L’objectif de cette étude est de regarder l’influence du Pt sur la formation des siliciures de Ni dans le procédé Salicide et en particulier sur la phase basse résistivité NiSi, envisagée par l’industrie pour réaliser les contacts avec les zones actives de transistors de type Flash. Pour cela, nous avons étudié la nature, la séquence et la cinétique des phases formées, d’une part sur le système Ni1-xPtx/Si(100) (0% ≤ x ≤ 30%), et plus particulièrement sur un système intéressant pour certaines de ces propriétés, Ni(13%Pt)/Si(100). Deux types de dépôts ont été confrontés : dépôts réalisés avec u
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Mangelinck, Dominique. "Etude de l'adaptation des paramètres cristallins de NiSi et Si par substitution du nickel." Aix-Marseille 3, 1995. http://www.theses.fr/1995AIX30047.

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Nous nous sommes interesses a l'evolution de la maille de nisi#2 epitaxiee sur le silicium par addition d'elements metalliques en faibles quantites: le cobalt, le platine ou l'or. Nous avons compare la formation et la microstructure des disiliciures contenant l'un de ces elements a celle du disiliciure non allie. L'incorporation des elements ainsi que les caracteristiques du film de nisi#2 dependent fortement de la metallurgie des systemes nickel/metal allie/silicium. Les differences les plus importantes sont observees pour l'addition d'or. Des mesures des parametres de maille (perpendiculaire
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Books on the topic "NiSi"

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Christodoulou, Demitris. To nisi. Kedros, 1985.

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Meyer, Sandra. Asa nisi masa. SnailPress, 1992.

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Kaneko, Misuzu. Matsuge no nisi. Jula Publishing Company, 1999.

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Norwich School of Art and Design. and Norwich Gallery, eds. Asa nisi masa. Norwich School of Art and Design, 1996.

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Batinić, Jure. Nisi vidijo čuda. Vlastita naklada, 2010.

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Shchapova, Elena. Nil nisi bene. Khameleon, 1989.

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Farinetti, Gianni. To Nisi Pow Kei. Kastaniotis, 2000.

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Warner Bros. Nisi hu shui guai. Hubei shao nian er tong chu ban she, 2014.

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Volarič, Jože. V vesolju nisi sam: Haibuni. Samozal., 1999.

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Hesse, Hermann. To Nisi tou onirou ke alla diigimata. Kastaniotis, 1986.

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Book chapters on the topic "NiSi"

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Arciero, Giampiero, Guido Bondolfi, and Viridiana Mazzola. "“Nemo psychologus nisi physiologus”." In The Foundations of Phenomenological Psychotherapy. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-78087-0_3.

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Philippides, Marios. "De mortuis nihil nisi bonum." In Constantine XI Dragaš Palaeologus (1404–1453). Routledge, 2018. http://dx.doi.org/10.4324/9781351055420-10.

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Wiescher, Michael. "De Mortuis Nil Nisi Bene." In Arthur E. Haas - The Hidden Pioneer of Quantum Mechanics. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-80606-4_26.

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Steinbach, Xenia. "3.1 Einleitung: »Nemo psychologus, nisi physiologus«." In Wissenschafts- und Technikgeschichte. transcript Verlag, 2023. http://dx.doi.org/10.14361/9783839470350-009.

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Martimiano, Taciane, and Jean Everson Martina. "Daemones Non Operantur Nisi Per Artem." In Security Protocols XXVI. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-03251-7_11.

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Martina, Jean Everson. "Daemones Non Operantur Nisi Per Artem." In Security Protocols XXVI. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-03251-7_12.

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de Libera, Alain. "Ex uno non fit nisi unum." In Historia Philosophiae Medii Aevi. B.R. Grüner Publishing Company, 1992. http://dx.doi.org/10.1075/zg.142.33lib.

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Shim, I., and K. A. Gingerich. "The nickel-group IV molecules NiC, NiSi, and NiGE." In Small Particles and Inorganic Clusters. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74913-1_83.

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Moretti, Paola Francesca. "Nisi modum epistolici characteris excederem. Jerome and Epistolary brevitas." In Culture and Literature in Latin Late Antiquity. Brepols Publishers, 2016. http://dx.doi.org/10.1484/m.stta-eb.5.111503.

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He, Ying, J. Y. Feng, and Q. L. Wu. "Effect of Pt Interlayer on Thermal Stability of NiSi Films." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.3795.

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Conference papers on the topic "NiSi"

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Mora-Coral, Anika, and Andrés Peñaranda. "Nisi - Islas Narrativas." In Memorias Primera Bienal RAD. Red Académica de Diseño - RAD, 2024. https://doi.org/10.53972/rad.mbrad.2024.1.374.

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El proyecto de investigación-creación interdisciplinario consistió en la construcción de un entorno inmersivo sensorial-experimental mediante proyecciones digitales, con el objetivo de desfragmentar historias literarias utilizando herramientas expresivas y conceptuales propias del diseño gráfico y las artes plásticas. Se llevaron a cabo talleres y laboratorios con los estudiantes del semillero Collatio de la carrera de Diseño Gráfico de Bellas Artes y profesionales del desarrollo tecnológico y científico, en un proceso de co-creación entre diversas disciplinas. Esto posibilitó establecer relac
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Li, J. P., Aaron Hunter, Rajesh Ramanujam, et al. "Formation of thin Ni2Si and NiSi films using low temperature rapid thermal processing." In 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP). IEEE, 2009. http://dx.doi.org/10.1109/rtp.2009.5373432.

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Knoll, L., Q. T. Zhao, R. Luptak, S. Trellenkamp, K. K. Bourdelle, and S. Mantl. "20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain." In 2011 12th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2011. http://dx.doi.org/10.1109/ulis.2011.5757986.

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Zhao, Q. T., L. Knoll, A. Schafer, S. Trellenkamp, K. K. Bourdelle, and S. Mantl. "Planar and nanowire Schottky barrier MOSFETs on SOI with NiSi and epitaxial NiSi2 contacts." In 2012 12th International Workshop on Junction Technology (IWJT). IEEE, 2012. http://dx.doi.org/10.1109/iwjt.2012.6212838.

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Vijayaragavan, Varadharajan, Clemens Fitz, Marco Lepper, et al. "Process optimization to reduce NiSi pipes and NiSi agglomeration on 28nm Nickel silicide LSA ms anneal process." In 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2015. http://dx.doi.org/10.1109/vlsi-tsa.2015.7117575.

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Meyer, B., U. Gottlieb, O. Laborde, et al. "Some electronic properties of single crystalline NiSi." In European Workshop Materials for Advanced Metallization. MAM'97 Abstracts Booklet. IEEE, 1997. http://dx.doi.org/10.1109/mam.1997.621110.

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Meyer, B., U. Gottlieb, O. Laborde, et al. "Some electronic properties of single crystalline NiSi." In European Workshop Materials for Advanced Metallization. MAM'97 Abstracts Booklet. IEEE, 1998. http://dx.doi.org/10.1109/mam.1998.887565.

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ISHIKAWA, Masato, Takeshi KADA, Hideaki MACHIDA, Yoshio OHSHITA, and Atsushi OGURA. "Precursors for chemical vapor deposition of NiSi." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.p3-7.

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Kimura, Hiroshi, and Ryuji Tomita. "Texture change of NiSi film with dopant implantation." In 2011 Materials for Advanced Metallization (MAM). IEEE, 2011. http://dx.doi.org/10.1109/iitc.2011.5940331.

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Hi-Deok Lee, Soon-Young Oh, Yong-Jin Kim, et al. "Thermal Immune NiSi Technology for Nano-scale CMOSFETs." In 2006 International Workshop on Junction Technology. IEEE, 2006. http://dx.doi.org/10.1109/iwjt.2006.220880.

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Reports on the topic "NiSi"

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Carmody, Michael John. Printed Nano Cu and NiSi Contacts and Metallization for Solar Cell Modules. Office of Scientific and Technical Information (OSTI), 2017. http://dx.doi.org/10.2172/1398964.

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Warfield, Lisa. 2023 NIST Summary of U.S. Legal Metrology Activities. National Institute of Standards and Technology, 2023. http://dx.doi.org/10.6028/nist.sp.2200-02e2023.

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The NIST Office of Weights and Measures (OWM) presents its second issue of the 2023 NIST Annual Summary of U.S. Legal Metrology Activities report. This report includes a summary of changes made to NIST Handbook 44 (2023) Specifications, Tolerances and Other Technical Requirements for Commercial Weighing and Measuring Devices, NIST Handbook 130 (2023) Uniform Laws and Regulations in the Areas of Legal Metrology, and Fuel Quality, and NIST Handbook 133 (2023) Checking the Net Contents of Packaged Goods. The summary will provide an archival record of proposals and associated actions with the goal
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Warfield, Lisa. 2023 NIST Summary of U.S. Legal Metrology Activities. National Institute of Standards and Technology, 2023. http://dx.doi.org/10.6028/nist.sp.2200-04.

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The NIST Office of Weights and Measures (OWM) presents its second issue of the 2023 NIST Annual Summary of U.S. Legal Metrology Activities report. This report includes a summary of changes made to NIST Handbook 44 (2023) Specifications, Tolerances and Other Technical Requirements for Commercial Weighing and Measuring Devices, NIST Handbook 130 (2023) Uniform Laws and Regulations in the Areas of Legal Metrology, and Fuel Quality, and NIST Handbook 133 (2023) Checking the Net Contents of Packaged Goods. The summary will provide an archival record of proposals and associated actions with the goal
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Warfield, Lisa. 2023 NIST Summary of U.S. Legal Metrology Activities. National Institute of Standards and Technology, 2023. http://dx.doi.org/10.6028/nist.sp.2200-02-2023.

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The NIST Office of Weights and Measures (OWM) presents its second issue of the 2023 NIST Annual Summary of U.S. Legal Metrology Activities report. This report includes a summary of changes made to NIST Handbook 44 (2023) Specifications, Tolerances and Other Technical Requirements for Commercial Weighing and Measuring Devices, NIST Handbook 130 (2023) Uniform Laws and Regulations in the Areas of Legal Metrology, and Fuel Quality, and NIST Handbook 133 (2023) Checking the Net Contents of Packaged Goods. The summary will provide an archival record of proposals and associated actions with the goal
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5

Iorga, Michaela, and Carroll Brickenkamp. National Voluntary Laboratory Accreditation Program (NVLAP) cryptographic and security testing. National Institute of Standards and Technology (U.S.), 2008. http://dx.doi.org/10.6028/nist.hb.150-17e2008.

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NIST Handbook 150-17 presents technical requirements and guidance for the accreditation of laboratories under the National Voluntary Laboratory Accreditation Program (NVLAP) Cryptographic and Security Testing (CST) Program. It is intended for information and use by accredited laboratories, laboratories seeking accreditation, laboratory accreditation systems, users of laboratory services, and others needing information on the requirements for accreditation under this program. The 2008 edition of NIST Handbook 150-l7 incorporates changes resulting from the release of the newest editions of ISO/I
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6

Miller, Kathryn. NIST Conference Papers Fiscal Year 2019 NIST Conference Papers Fiscal Year 2019. National Institute of Standards and Technology, 2022. http://dx.doi.org/10.6028/nist.sp.1276v1.

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NIST is committed to the idea that results of federally funded research are a valuable national resource and a strategic asset. To the extent feasible and consistent with law, agency mission, resource constraints, and U.S. national, homeland, and economic security, NIST will promote the deposit of scientific data arising from unclassified research and programs, funded wholly or in part by NIST, except for Standard Reference Data, free of charge in publicly accessible databases. Subject to the same conditions and constraints listed above, NIST also intends to make freely available to the public
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7

Miller, Kathryn. NIST Conference Papers Fiscal Year 2019 NIST Conference Papers Fiscal Year 2019. National Institute of Standards and Technology, 2022. http://dx.doi.org/10.6028/nist.sp.1276v2.

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Abstract:
NIST is committed to the idea that results of federally funded research are a valuable national resource and a strategic asset. To the extent feasible and consistent with law, agency mission, resource constraints, and U.S. national, homeland, and economic security, NIST will promote the deposit of scientific data arising from unclassified research and programs, funded wholly or in part by NIST, except for Standard Reference Data, free of charge in publicly accessible databases. Subject to the same conditions and constraints listed above, NIST also intends to make freely available to the public
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8

Miller, Kathryn. NIST Conference Papers Fiscal Year 2019 NIST Conference Papers Fiscal Year 2019. National Institute of Standards and Technology, 2022. http://dx.doi.org/10.6028/nist.sp.1276v3.

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Abstract:
NIST is committed to the idea that results of federally funded research are a valuable national resource and a strategic asset. To the extent feasible and consistent with law, agency mission, resource constraints, and U.S. national, homeland, and economic security, NIST will promote the deposit of scientific data arising from unclassified research and programs, funded wholly or in part by NIST, except for Standard Reference Data, free of charge in publicly accessible databases. Subject to the same conditions and constraints listed above, NIST also intends to make freely available to the public
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9

Rose, Scott. Planning for a Zero Trust Architecture. National Institute of Standards and Technology, 2022. http://dx.doi.org/10.6028/nist.cswp.20.

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NIST Special Publication 800-207 defines zero trust as a set of cybersecurity principles used when planning and implementing an enterprise architecture. These principles apply to endpoints, services, and data flows. Input and cooperation from various stakeholders in an enterprise is needed for a zero trust architecture to succeed in improving the enterprise security posture. Some of these stakeholders may not be familiar with risk analysis and management. This document provides an overview of the NIST Risk Management Framework (NIST RMF) and how the NIST RMF can be applied when developing and
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10

Richmond, Hazel M., and Jeffrey Horlick. NVLAP personal body armor. National Institute of Standards and Technology (U.S.), 2010. http://dx.doi.org/10.6028/nist.hb.150-24e2010.

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NIST Handbook 150-24 presents technical requirements and guidance for the accreditation of laboratories under the National Voluntary Laboratory Accreditation Program (NVLAP) Personal Body Armor program. It is intended for information and use by accredited laboratories, laboratories seeking accreditation, laboratory accreditation systems, users of laboratory services, and others needing information on the requirements for accreditation under this program. The 2009 edition of NIST Handbook 150-24 incorporates changes resulting from the release of the newest editions of ISO/IEC 17025, General req
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