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Journal articles on the topic 'NiSi'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Lee, Young Pak, Jin Bae Kim, Young Joon Yoo, and Yuri V. Kudryavtsev. "Solid-state reaction in Ni/Si multilayered films, characterized by magneto-optical and optical spectroscopies." International Journal of Materials Research 97, no. 2 (2006): 136–39. http://dx.doi.org/10.1515/ijmr-2006-0023.

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Abstract Solid-state reactions, induced by ion-beam mixing (IBM) and thermal annealing, in Ni/Si multilayered films (MLF) with an overall stoichiometry of Ni2Si, NiSi and NiSi2, and with a constant Ni sublayer thickness (nominally, 3.0 nm), were studied by optical and magneto-optical spectroscopies as well as X-ray diffraction (XRD). The layer mixing was performed with Ar+ ions of an energy of 80 keV and a dose of 1.5 × 1016 Ar+/cm2. It was shown that the IBM leads to structural changes in the Ni/Si MLF, which cannot be easily detected by XRD but are recognized by optical tools. An annealing a

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2

Sidorenko, Sergey I., Yu N. Makogon, S. M. Voloshko, et al. "Diffusion Formation of Silicide Phases in Ni/Si(001) Nanodimensional Film System." Defect and Diffusion Forum 280-281 (November 2008): 9–14. http://dx.doi.org/10.4028/www.scientific.net/ddf.280-281.9.

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Thermally stimulated solid state reactions in the Ni(10 nm)/Si(001) film system that occur under the annealing in the nitrogen ambient were researched by methods of сross-sectional transmission electron microscopy and scanning electron microscope. It was established that NiSi2 formation consists of several steps: a formation of the NiSi polycrystalline silicide thickness of which twice higher initial thickness of Ni layer; prevailed diffusion of Ni atoms out of NiSi into Si substrate according with lattice mechanism and appearing of exceeding vacancies at grain boundaries; a formation of epita

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3

Suzuki, Akihiko, and Miwa Suzuki. "Antimicrobial Activity of Lactococcus lactis subsp. lactis Isolated from a Stranded Cuvier’s Beaked Whale (Ziphius cavirostris) against Gram-Positive and -Negative Bacteria." Microorganisms 9, no. 2 (2021): 243. http://dx.doi.org/10.3390/microorganisms9020243.

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In the present study, we isolated and characterized Lactococcus lactis (L. lactis) subsp. lactis from a female Cuvier’s beaked whale (Ziphius cavirostris) stranded in Shizuoka, Japan. Only five isolates (CBW1-5), grown on Lactobacilli de Man Rogosa Sharpe (MRS) agar plates prepared using 50% artificial seawater, were positive in L. lactis species-specific primer PCR. Their 16S rRNA sequences were highly similar to those of L. lactis subsp. lactis JCM 5805T. The Gram reaction, motility, gas production from glucose, catalase production, and growth conditions were consistent with those of the typ

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4

Blum, Ivan, Alain Portavoce, Lee Chow, Khalid Hoummada, and Dominique Mangelinck. "Diffusion and Redistribution of Boron in Nickel Silicides." Defect and Diffusion Forum 323-325 (April 2012): 415–20. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.415.

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The Diffusion and Solubility of B Implanted in δ-Ni2Si and Nisi Layers Is Studied by SIMS. it Is Observed that both Diffusion and Solubility Are Higher in δ-Ni2Si than Nisi. the Redistribution of B during Ni Silicidation Is Also Studied. the SIMS Profiles Show the Presence of Concentration Step in the Middle of the Final Nisi Layer. this Profile Shape Is Explained in Light of the Results Obtained in Preformed Silicides. the Proposed Model Is Supported by Redistribution Simulations that Can Reproduce the Main Features of the Profile.

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5

Li, Haiping, and Daniel J. O'Sullivan. "Identification of a nisI Promoter within the nisABCTIP Operon That May Enable Establishment of Nisin Immunity Prior to Induction of the Operon via Signal Transduction." Journal of Bacteriology 188, no. 24 (2006): 8496–503. http://dx.doi.org/10.1128/jb.00946-06.

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ABSTRACT Certain strains of Lactococcus lactis produce the broad-spectrum bacteriocin nisin, which belongs to the lantibiotic class of antimicrobial peptides. The genes encoding nisin are organized in three contiguous operons: nisABTCIP, encoding production and immunity (nisI); nisRK, encoding regulation; and nisFEG, also involved in immunity. Transcription of nisABTCIP and nisFEG requires autoinduction by external nisin via signal transducing by NisRK. This organization poses the intriguing question of how sufficient immunity (NisI) can be expressed when the nisin cluster enters a new cell, b

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6

Wilson, D. F., and O. B. Cavin. "Thermal expansion behavior of NiSi/NiSi2." Scripta Metallurgica et Materialia 26, no. 1 (1992): 85–88. http://dx.doi.org/10.1016/0956-716x(92)90374-n.

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7

Portavoce, Alain, Guy Tréglia, Boubekeur Lalmi, et al. "Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion." Solid State Phenomena 172-174 (June 2011): 633–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.633.

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Silicide sequential phase formation during tens-of-nanometer-thick metallic film reaction on Si substrate has been extensively studied. Nevertheless, the reasons of sequential phase formation are still under debate, and have been poorly studied at the atomic scale. Using atomistic kinetic Monte Carlo simulations, we show that considering a binary fcc non-regular solid solution, without diffusion asymmetries, the diffusive reaction of a sub-nanometer-thick film (~5 atomic monolayers) on a semi-infinite substrate leads to the sequential formation of all the phases present in the binary phase dia

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8

Ji, Gen Shun, Qin Ma, Tie Ming Guo, Qi Zhou, Jian Gang Jia, and Xue Ding Chen. "Phase Evolutions of High Energy Ball Milled Ni-66.7at% Si." Key Engineering Materials 336-338 (April 2007): 2325–27. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.2325.

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The high-energy ball milling of Ni-66.7 at% Si elemental powder mixtures was carried out using a FRITSCH Puluerisette-5 mill. XRD was used to identify the phase evolutions during high-energy ball milling. The XRD patterns showed that the intensities of nickel peaks and silicon peaks gradually decreased with milling time increased from 1 h to 10 h, simultaneously, the peaks of NiSi2 and NiSi appeared. With milling time further increased to 45 h, single phase of NiSi2 formed. New peaks were observed after 75 h milling, which were indexed as FeSi. This reveals that long time high-energy ball mill

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9

Nikitina, Irina P., Konstantin Vassilevski, Alton B. Horsfall, et al. "Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC." Materials Science Forum 615-617 (March 2009): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.577.

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Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures from 600 to 750 °C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 °C temperature range, while annealing at around 750 °C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman ma

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10

Mangelinck, Dominique. "Effect of a Third Element on the Stability of NiSi Thin Films on Si." Defect and Diffusion Forum 249 (January 2006): 127–34. http://dx.doi.org/10.4028/www.scientific.net/ddf.249.127.

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The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900oC leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this ele

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11

He, Ying, Jia You Feng, and Q. L. Wu. "Effect of Pt Interlayer on Thermal Stability of NiSi Films." Materials Science Forum 475-479 (January 2005): 3795–98. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3795.

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In this paper, the effect of a thin interlayer of Pt on thermal stability of NiSi films on Si(111) has been studied. The Ni/Pt/Si(111) bilayered samples with the same film thickness were annealed by rapid thermal annealing at 640 °C-900 °C. Both the X-ray diffraction analysis and four-probe measurements show a remarkable improvement in the thermal stability NiSi as a result of Pt interlayer. The possible reason for the enhanced NiSi thermal stability is attributed to the formation of the Ni(Pt)Si solid solution and its preferred orientation, leading to the decrease in the driving force of NiSi

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12

Blum, I., A. Portavoce, L. Chow, et al. "B diffusion in implanted Ni2Si and NiSi layers." Applied Physics Letters 96, no. 5 (2010): 054102. http://dx.doi.org/10.1063/1.3303988.

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13

Lauwers, Anne, Jorge Kittl, and Karen Maex. "RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and pMOS (Ni-Rich Silicide) Gates on HfSiON." Materials Science Forum 573-574 (March 2008): 341–51. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.341.

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CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of nMOS (NiSi) and pMOS (Ni-rich) gates on HfSiON is demonstrated. Linewidth independent phase control with smooth threshold voltage (Vt) roll-off characteristics is achieved for NiSi, Ni2Si and Ni31Si12 FUSI gates by controlling the Ni-to-Si reacted ratio through optimization of the thermal budget of silicidation (prior to selective Ni removal). A 2-step Ni FUSI process enables simultaneous silicidation of nMOS and pMOS FUSI gates, achieving different Ni/Si ratios on nMOS and pMOS by reduction of th

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14

Takala, Timo M., and Per E. J. Saris. "C terminus of NisI provides specificity to nisin." Microbiology 152, no. 12 (2006): 3543–49. http://dx.doi.org/10.1099/mic.0.29083-0.

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Nisin-producing Lactococcus lactis protects its own cell membrane against the bacteriocin with the ABC transporter NisFEG, and the immunity lipoprotein NisI. In this study, in order to localize a site for specific nisin interaction in NisI, a C-terminal deletion series of NisI was constructed, and the C-terminally truncated NisI proteins were expressed in L. lactis. The shortest deletion (5 aa) decreased the nisin immunity capacity considerably in the nisin-negative strain MG1614, resulting in approximately 78 % loss of immunity function compared with native NisI. A deletion of 21 aa decreased

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15

Alberti, Alessandra, Corrado Spinella, Antonino La Magna, and Emanuele Rimini. "Nucleation and growth of NiSi from Ni2Si transrotational domains." Applied Physics Letters 90, no. 5 (2007): 053507. http://dx.doi.org/10.1063/1.2437058.

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16

Zhang, Zhen, Per-Erik Hellström, Mikael Östling, Shi-Li Zhang, and Jun Lu. "Electrically robust ultralong nanowires of NiSi, Ni2Si, and Ni31Si12." Applied Physics Letters 88, no. 4 (2006): 043104. http://dx.doi.org/10.1063/1.2168017.

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17

Lee, Wonhee, Jinhyung Lee, Joong Dae Bae, Chang Sop Byun, and Dong Kwan Kim. "Syntheses of Ni2Si, Ni5Si2, and NiSi by mechanical alloying." Scripta Materialia 44, no. 1 (2001): 97–103. http://dx.doi.org/10.1016/s1359-6462(00)00547-9.

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18

Zhao, F. F., J. Z. Zheng, Z. X. Shen, T. Osipowicz, W. Z. Gao, and L. H. Chan. "Thermal stability study of NiSi and NiSi2 thin films." Microelectronic Engineering 71, no. 1 (2004): 104–11. http://dx.doi.org/10.1016/j.mee.2003.08.010.

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19

Deduytsche, D., C. Detavernier, R. L. Van Meirhaeghe, and C. Lavoie. "High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation." Journal of Applied Physics 98, no. 3 (2005): 033526. http://dx.doi.org/10.1063/1.2005380.

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20

Mangelinck, Dominique, and Khalid Hoummada. "Effect of stress on the transformation of Ni2Si into NiSi." Applied Physics Letters 92, no. 25 (2008): 254101. http://dx.doi.org/10.1063/1.2949751.

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21

Lapitskaya, Vasilina, Ruslan Trukhan, Tatyana Kuznetsova, et al. "Microstructure and Properties of Thin-Film Submicrostructures Obtained by Rapid Thermal Treatment of Nickel Films on Silicon." Surfaces 7, no. 2 (2024): 196–207. http://dx.doi.org/10.3390/surfaces7020013.

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Nickel films of 40 nm thickness were obtained by means of magnetron sputtering on a single-crystalline silicon substrate. The films were subjected to rapid thermal treatment (RTT) for 7 s until the temperature increased from 200 to 550 °C. By means of the X-ray diffraction method, the structural-phase composition of nickel films before and after RTT was explored. The atomic force microscopy method due to direct contact with the surface under study, made it possible to accurately define the microstructure, roughness, specific surface energy and grain size of the nickel films before and after RT

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22

Li, Y., J. Chen, C. Lazik, et al. "Nickel silicon thin film as barrier in under-bump-metallization by magnetronsputtering deposition for Pb-free chip packaging." Journal of Materials Research 20, no. 10 (2005): 2622–26. http://dx.doi.org/10.1557/jmr.2005.0346.

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In the search for a Pb-free compatible under-bump-metallization (UBM) barrier material, magnetron sputtering of a nonmagnetic nickel silicon alloy (NiSi) target was used to deposit a low-stress polycrystalline NiSi thin film. In the reaction with SnAg3.0Cu0.5 solder, NiSi was found to have greatly reduced reaction and intermetallics (IMC) formation rates compared with sputtered NiV. A continuous layer of IMCs in NiSi UBM-solder joint remains stable after 10 reflows and 1000 h thermal aging tests, resulting in preferred bulk solder failure mode in ball shearing/pull testing. Our results demonst

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23

Heinemann, Markus K. "Nil nisi bene?" Thoracic and Cardiovascular Surgeon 72, no. 04 (2024): 251–52. http://dx.doi.org/10.1055/s-0044-1786979.

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24

Sangmeister, Bernd. "Nihil nisi male." Kritische Vierteljahresschrift für Gesetzgebung und Rechtswissenschaft 108, no. 1 (2025): 3–38. https://doi.org/10.5771/2193-7869-2025-1-3.

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1938 erschien im Verlag C. H. Beck (München/Berlin) ein Kommentar zum Bürgerlichen Gesetzbuch (BGB), der als einbändiger Kurz – Kommentar konzipiert worden war und auf 2194 Seiten dem Nutzer in knappem und präzisem Stil verfasste zuverlässige und aktuelle, vorwiegend an der Rechtsprechung orientierte erläuternde Informationen bot. Das Werk wandte sich vornehmlich an die juristische Praxis, also Anwälte und Richter, darüber hinaus auch und gerade an den juristischen Nachwuchs. Dies wiederum war Anlass für Autoren und Herausgeber, sich für Otto Palandt als „zugkräftigen“ populären Herausgeber zu

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25

Alizadeh, Mahdi, Najwa binti Hamzan, Poh Choon Ooi, Muhammad Firdaus bin Omar, Chang Fu Dee, and Boon Tong Goh. "Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition." Materials 12, no. 4 (2019): 674. http://dx.doi.org/10.3390/ma12040674.

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This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and t

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Vočadlo, Lidunka, Ian G. Wood, and David P. Dobson. "High-pressure phase transitions and equations of state in NiSi. I.Ab initiosimulations." Journal of Applied Crystallography 45, no. 2 (2012): 186–96. http://dx.doi.org/10.1107/s0021889812000337.

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First-principles calculations have been used to determine the equation of state and structural properties of NiSi up to pressures equivalent to that in the Earth's inner core. At atmospheric pressure, the thermodynamically stable phase is that with the MnP structure (as found experimentally). At high pressures, NiSi shows phase transformations to a number of high-pressure polymorphs. For pressures greater than ∼250 GPa, the thermodynamically stable phase of NiSi is that with the CsCl structure, which persists to the highest pressures simulated (∼500 GPa). At the pressures of the Earth's inner

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27

Liu, Zhihui, Tengda Guo, Yongjun Cheng, et al. "Mechanism of Seebeck coefficient variation at the output of NiCr/NiSi thin film thermocouple with different wires." Journal of Physics: Conference Series 2724, no. 1 (2024): 012001. http://dx.doi.org/10.1088/1742-6596/2724/1/012001.

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Abstract In this paper, by using magnetron sputtering to prepare NiCr/NiSi thin film thermocouples, the static calibration method is used for NiCr/NiSi thermocouples with rapid temperature calibration experiments. Different temperature calibration curves are obtained. The Seebeck coefficient of NiCr/NiSi thin film thermocouples connected to NiCr/NiSi wires is significantly higher (41.39 μV/°C) than that of NiCr/NiSi wires (0 μV/°C). The Seebeck coefficient (41.39 μV/°C) of the NiCr/NiSi thin-film thermocouple connected to copper wire is significantly higher than that of the thermocouple connec

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Cui, Yun Xian, De Shun Yang, Qi Yong Zeng, and Bao Yuan Sun. "Fabrication and Characterization of NiCr/NiSi Functional Thin Films on Temperature Measurement of Cutter Sensor." Key Engineering Materials 431-432 (March 2010): 535–38. http://dx.doi.org/10.4028/www.scientific.net/kem.431-432.535.

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NiCr/NiSi functional thin films of temperature measurement of cutter sensor were prepared by means of advanced Twinned microwave ECR plasma source enhanced Radio Frequency (RF) reaction non-balance magnetron sputtering technique. Fabrication technologies of NiCr/NiSi thin films were studied. The Compositions, micro-morphology, general structure and depth of NiCr/NiSi thin films were analyzed by means of Electron Probe, SEM, AFM, step profiler and stereo vision micro operation system. The results showed that NiCr/NiSi thin-films were small depth, uniform compact, smooth and good continuity, com

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29

Wang, H. M., C. M. Wang, and L. X. Cai. "Wear and corrosion resistance of laser clad Ni2Si/NiSi composite coatings." Surface and Coatings Technology 168, no. 2-3 (2003): 202–8. http://dx.doi.org/10.1016/s0257-8972(03)00240-8.

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Cai, L. X., H. M. Wang, and C. M. Wang. "Corrosion resistance of laser clad Cr-alloyed Ni2Si/NiSi intermetallic coatings." Surface and Coatings Technology 182, no. 2-3 (2004): 294–99. http://dx.doi.org/10.1016/j.surfcoat.2003.08.047.

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31

Dranenko, A. S., V. A. Lavrenko, V. N. Talash, and M. V. Koshelev. "High-Temperature and Anodic Oxidation of Thin NiSi and NiSi2 Films." Powder Metallurgy and Metal Ceramics 52, no. 9-10 (2014): 572–76. http://dx.doi.org/10.1007/s11106-014-9562-x.

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32

Kim, Yong Jin, Chel Jong Choi, Soon Young Oh, et al. "Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure." Solid State Phenomena 121-123 (March 2007): 1261–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.1261.

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In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thh

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33

Wood, Ian G., Jabraan Ahmed, David P. Dobson, and Lidunka Vočadlo. "High-pressure phase transitions and equations of state in NiSi. III. A new high-pressure phase of NiSi." Journal of Applied Crystallography 46, no. 1 (2013): 14–24. http://dx.doi.org/10.1107/s0021889812047085.

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A new high-pressure phase of NiSi has been synthesized in a multi-anvil press by quenching samples to room temperature from 1223–1310 K at 17.5 GPa and then recovering them to atmospheric pressure. The crystal structure of this recovered material has been determined from X-ray powder diffraction data; the resulting fractional coordinates are in good agreement with those obtained from anab initiocomputer simulation. The structure, in which each atom is six-fold coordinated by atoms of the other kind, is orthorhombic (space groupPmmn) witha= 3.27,b= 3.03,c= 4.70 Å. This orthorhombic phase of NiS

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Yang, Y. L., T. F. Young, W. C. Kuo, S. H. Fang, and Y. K. Chao. "SURFACE PLASMON RESONANCE ABSORPTION OF ALBUMIN/WATER ON Ni THIN FILM DEPOSITED ON Si AT 230°C." Biomedical Engineering: Applications, Basis and Communications 20, no. 06 (2008): 393–400. http://dx.doi.org/10.4015/s1016237208001008.

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In this work we have studied the surface plasmon resonance (SPR) absorption of Albumin on NiSi nanoparticle thin film deposited on Si. The thin films were deposited by means of RF sputtering on Si at various temperatures and times for different thicknesses, and characterized by grazing angle XRD and SEM. From these experimental conditions, we only observed a formation of NiSi nanoparticles deposited on Si at 230°C for 15 min to 30 min. The silicon atoms seem to emerge out of the surface and react with Nickel's. Due to the high activation energy, this mechanism would not take place at lower tem

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35

Kim, Seongjun, Hong-Ki Kim, Minwho Lim, et al. "Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate." Journal of Nanomaterials 2019 (December 5, 2019): 1–5. http://dx.doi.org/10.1155/2019/5231983.

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In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C. We determined that Ni-silicide, especially the NiSi phase, plays a key role in the formation of ohmic contacts rather than an increase in carbon vacancies in the C-faced SiC substrate. A vertically oriented NiSi phase was observed in the thermally annealed sample at the optimized temperature that behaves as a current path. A further increase in anne

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36

Nishihara, Ryousuke, Katsunori Makihara, Yoshihiro Kawaguchi, et al. "Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/ Kelvin Probe Technique." Materials Science Forum 561-565 (October 2007): 1213–16. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1213.

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We have formed high density nanodots of nickel silicide (NiSi) on ultrathin SiO2 and characterized their electronic charged states by using an AFM/Kelvin probe technique. Si quantum dots (Si-QDs) with an areal dot density of ~2.5x1011cm-2 were self-assembled on ~3.6nm-thick thermally-grown SiO2 by controlling the early stages of LPCVD using pure SiH4 gas. Subsequently, electron beam evaporation of Ni was carried out as thin as ~1.7nm in equivalent thickness at room temperature and followed by 300°C anneal for 5min in vacuum. XPS and AFM measurements confirm the formation of NiSi dots with an a

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37

Wilkes, K. V. "Nemo psychologus nisi physiologus." Inquiry 29, no. 1-4 (1986): 169–85. http://dx.doi.org/10.1080/00201748608602085.

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38

Meyer, B., U. Gottlieb, O. Laborde, et al. "Intrinsic properties of NiSi." Journal of Alloys and Compounds 262-263 (November 1997): 235–37. http://dx.doi.org/10.1016/s0925-8388(97)00388-5.

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39

Yang, Tie, Liyu Hao, Rabah Khenata, and Xiaotian Wang. "Investigation of the structural competing and atomic ordering in Heusler compounds Fe 2 NiSi and Ni 2 FeSi under strain condition." Royal Society Open Science 6, no. 9 (2019): 191007. http://dx.doi.org/10.1098/rsos.191007.

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The structural competing and atomic ordering of the full Heusler compounds Fe 2 NiSi and Ni 2 FeSi under uniform and tetragonal strains have been systematically studied by the first-principles calculation. Both Fe 2 NiSi and Ni 2 FeSi have the XA structure in cubic phase and they show metallic band structures and large magnetic moments (greater than 3 μ B ) at equilibrium condition. Tetragonal distortion can further decrease the total energy, leading to the possible phase transformation. Furthermore, different atom reordering behaviours have been observed: for Fe 2 NiSi, atoms reorder from cub

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40

Park, Jingyu, Heeyoung Jeon, Hyunjung Kim, Woochool Jang, Hyungtak Seo, and Hyeongtag Jeon. "Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device." RSC Adv. 4, no. 105 (2014): 61064–67. http://dx.doi.org/10.1039/c4ra10446c.

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Zeng, Qi Yong, Tao Hong, Le Chen, and Yun Xian Cui. "Magnetron Sputtering of NiCr/NiSi Thin-Film Thermocouple Sensor for Temperature Measurement when Machining Chemical Explosive Material." Key Engineering Materials 467-469 (February 2011): 134–39. http://dx.doi.org/10.4028/www.scientific.net/kem.467-469.134.

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Temperature plays a vital role in the machining industry today. A Nickel-Chrome versus Nickel-Silicon thin-film thermocouple system has been established for measuring instantaneous workpiece temperature in chemical explosive material machining. The NiCr/NiSi thin-film thermocouples have been deposited inside high speed steel cutters by magnetron sputtering. The typical deposition conditions are summarized. Static and dynamic calibrations of the NiCr/NiSi thin-film thermocouples are presented. The Seebeck coefficient of the TFTC is 40.4 μV/°C which is almost the same as that of NiCr/NiSi wire t

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Tanimoto, Satoshi, Masanori Miyabe, Takamitsu Shiiyama, et al. "Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC." Materials Science Forum 679-680 (March 2011): 465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.465.

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There is still little consensus regarding why low contact resistivity is achieved when Ni on n-type 4H- and 6H-SiC is annealed at temperatures of more than above 950°C. The objective of this paper is to provide an answer concerning to this question. It is has been reported that even Ni-based contacts formed in the n++ region exhibited a steep reduction of contact resistivity in an annealing temperature range > 900°C. This effect reduction cannot be explained by the carbon vacancy induced donor model (Vc model) proposed by Han and his coworkers [Appl. Phys. Lett., Vol. 79, p. 1816 (2001)]. A

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Solovjov, Ja A., та V. A. Pilipenko. "EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON". Doklady BGUIR, № 1 (6 березня 2020): 81–88. http://dx.doi.org/10.35596/1729-7648-2020-18-1-81-88.

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Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C. Nickel films of about 60 nm thickness were deposited by magnetron sputtering onto the silicon substrates having a resistivity of 0.58 to 0.53 Ohms×cm. The rapid thermal treatment was carried out in the range of 200 to 550 °C under heat balance mode by irradiating the backside of the substrates with non-coherent light flux in nitrogen ambient for 7 seconds. The t

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Cai, L. X., C. M. Wang, and H. M. Wang. "Laser cladding for wear-resistant Cr-alloyed Ni2Si–NiSi intermetallic composite coatings." Materials Letters 57, no. 19 (2003): 2914–18. http://dx.doi.org/10.1016/s0167-577x(02)01396-4.

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Zeng, Qi Yong, Xiao Feng Zheng, Gao Hui Zhang, and Le Chen. "Development of Cutting Tools with Built-in Thin Film Thermocouple for Monitoring Machining Temperature." Advanced Materials Research 189-193 (February 2011): 3170–74. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.3170.

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Temperature plays a vital role in the machining industry today. NiCr/NiSi thin-film thermocouples have been deposited on the rake face of polycrystalline cubic boron nitride (PCBN) tools by magnetron sputtering. The typical deposition conditions are summarized. Static and dynamic calibrations of the NiCr/NiSi thin-film thermocouples are presented. The Seebeck coefficient of the TFTC is 37.3 μV/°C. The response time is about 3.9 ms. The testing results indicate that the developed NiCr/NiSi thin-film thermocouple sensors perform excellently when machining A3 steel in situ.

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Dhobi, Saddam Husain, Uday Khatri, Kishori Yadav, et al. "SPRING DRINKING WATER OPTICAL PROPERTIES (420nm- 700nm) IN HILLY REGION NEAR NISI KHOLA AREA BAGLUNG, NEPAL." Journal of Research in Engineering and Applied Sciences 7, no. 3 (2022): 347–52. http://dx.doi.org/10.46565/jreas.202273347-352.

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To measure the transmittance of drinking water, 2W LED light, Theremion_Spectrometer and diffraction grating are used. The research area is Nisi located inBaglung district, Nepal. The observation is taken 9 sample of drinking water taken from different sources of Nisi. The observation shows that thetransmittance of drinking water taken from Kanabazer, Jiba Khola, Jiri, Jajir, Khahare Khola, Bhalu Khola and Nisi Khola is high. In addition, the absorbanceof drinking water taken from Khar Chowar is higher than other. The transmittance of the sample ranges from 32% to 100% while absorption coeffic

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Torregiani, C., Jan D'Haen, K. Opsomer, M. J. Van Dal, Paul van Houtte, and Karen Maex. "Thermomechanical Properties of Nickel Silicide: Dependence on the Microstructure." Materials Science Forum 495-497 (September 2005): 1431–36. http://dx.doi.org/10.4028/www.scientific.net/msf.495-497.1431.

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Nickel monosilicide (NiSi) is a key material in microelectronics and its thermomechanical properties play an important role in determining the stress/strain field generated in a transistor structure. The Coefficient of Thermal Expansion (CTE) is of particular importance in the determination of such a field. As NiSi is used in microelectronics in its polycrystalline form, it becomes of particular interest to study the thermomechanical behaviour of the NiSi aggregate, considered as a unique macroscopic body. The grain orientation of a 120 nm polycrystalline NiSi film grown on single crystal sili

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Futase, Takuya, and Hisanori Tanimoto. "Fluoride Contamination Induced ${\rm NiSi}_{2}$ Film Formation in a Gate NiSi Line." IEEE Transactions on Semiconductor Manufacturing 26, no. 3 (2013): 355–60. http://dx.doi.org/10.1109/tsm.2013.2268872.

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Guo, Huijin, Zhihui Liu, Tengda Guo, et al. "Effect of Hot Junction Size on the Temperature Measurement of Proton Exchange Membrane Fuel Cells Using NiCr/NiSi Thin-Film Thermocouple Sensors." Micromachines 15, no. 11 (2024): 1375. http://dx.doi.org/10.3390/mi15111375.

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In the process of using thin-film thermocouples for contact measurement of the reaction temperature in proton exchange membrane fuel cells (PEMFC), the impact of thin-film thermocouple volume on the system’s reaction temperature field variation, reaction efficiency, and the lifespan of thermocouples under these conditions is not thoroughly studied. Using magnetron sputtering technology, NiCr/NiSi thin-film thermocouples (NiCr/NiSi TFTCs) with different junction sizes were fabricated on the proton exchange membrane (PEM). These NiCr/NiSi TFTCs exhibit excellent compactness, with thickness and p

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Morisawa, Naoya, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki. "Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures." Key Engineering Materials 470 (February 2011): 135–39. http://dx.doi.org/10.4028/www.scientific.net/kem.470.135.

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We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) in MOS capacitors. The light irradiation resulted in reduced flat-band voltage shifts of the MOS capacitors in comparison to the shift in the dark. This result can be interpreted in terms of the shift of the charge centroid toward the gate side in the hybrid floating gate caused by the photoexcitation of electrons in NiSi-NDs and the subsequent electron tunneling to Si-QDs. The capacitance of the MOS capacitors at

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