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Journal articles on the topic 'Nitride Semiconductors - Ferromagnetism'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Liao, Zhongxin, Tongtong Wang, Yonggang Liu, Baorui Xia, and Xingdong Jiang. "Ferromagnetic Cu3N Nanoparticles Demonstrated by X-ray Magnetic Circular Dichroism (XMCD) and the Density Functional Theory (DFT) Calculations." Journal of Nanoelectronics and Optoelectronics 15, no. 12 (2020): 1494–501. http://dx.doi.org/10.1166/jno.2020.2892.

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In recent years, ferromagnetism induced by natural defects of nonmagnetic semiconductors has been widely investigated and expected to be applied in spintronics. On this basis, we report the ferromagnetic behavior of copper (I) nitride (Cu3N) nanoparticles. A robust room temperature ferromagnetism is found in Cu3N nanoparticles with the saturated magnetization of 4 memu/g (300 K). Based on the element-specific X-ray magnetic circular dichroism (XMCD) and the density functional theory (DFT) analysis, it is concluded that the ferromagnetism of Cu3N nanoparticles originate from the surface Cu vaca

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2

Sato, K., T. Fukushima, and H. Katayama-Yoshida. "Ferromagnetism and spinodal decomposition in dilute magnetic nitride semiconductors." Journal of Physics: Condensed Matter 19, no. 36 (2007): 365212. http://dx.doi.org/10.1088/0953-8984/19/36/365212.

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3

Chambers, Scott A. "Ferromagnetism in doped thin-film oxide and nitride semiconductors and dielectrics." Surface Science Reports 61, no. 8 (2006): 345–81. http://dx.doi.org/10.1016/j.surfrep.2006.05.001.

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4

Ren, Hui Hui, Rong Wu, Ji Kang Jian, Chu Chen, and Abduleziz Ablat. "Al Vacancy Induced Room-Temperature Ferromagnetic in Un-Doped AlN." Advanced Materials Research 772 (September 2013): 57–61. http://dx.doi.org/10.4028/www.scientific.net/amr.772.57.

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Room-temperature ferromagnetism has been found in AlN grown by direct arc discharge method using the direct reaction of Al powder with N2 gas. The observed room-temperature ferromagnetism which arises from the aluminum vacancy is intrinsic properties in AlN. The results could rule out oxygen impurities as the main cause of magnetic origin in AlN. First-principles calculations reveal that spontaneous spin polarization creates with a 3.0 uBlocal moment for AlN and magnetic originate from the polarization of the unpaired 2p electrons of N surrounding the Al vacancy. The aluminum vacancy induced m

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5

Li, Jun, Yuhong Huang, Hongkuan Yuan, and Hong Chen. "Predicted hexagonal titanium nitride monolayer as an intrinsic ferromagnetic semiconductor." European Physical Journal Applied Physics 95, no. 1 (2021): 10601. http://dx.doi.org/10.1051/epjap/2021210025.

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Two-dimensional (2D) magnetic semiconductors have great promising for energy-efficient ultracompact spintronics due to the low-dimensional ferromagnetic and semiconducting behavior. Here, we predict hexagonal titanium nitride monolayer (h-TiN) to be a ferromagnetic semiconductor by investigating stability, magnetism, and carrier transport of h-TiN using the first-principles calculations. The thermodynamical stability of h-TiN is revealed by phonon dispersion, molecular dynamics simulation and formation energy. The energy band structure shows that h-TiN is a ferromagnetic semiconductor with med

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6

Liu, Zhengyuan, Bingcheng Luo, and Boyu Hou. "Coexistence of ferroelectricity and ferromagnetism in Ni-doped Al_0.7Sc_0.3N thin films." Applied Physics Letters 120, no. 25 (2022): 252904. http://dx.doi.org/10.1063/5.0096760.

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Development of multiferroic materials with the capability of compatibility with the current semiconductor technology is of interest for practical applications. Recent experimental discovery of robust ferroelectricity in CMOS-compatible III-nitrides offers an alluring opportunity to construct multiferroic nitrides through chemical-doping engineering. We here reported the coexistence of ferroelectricity and ferromagnetism in Ni-doped Al0.7Sc0.3N thin films. It is found that apart from the promising ferroelectric properties, including a square-like polarization–electric field ( P–E) hysteresis lo

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7

Maia, D. B., R. A. Raimundo, T. A. Passos, and R. A. Torquato. "Analysis of structural, morphological and magnetic properties of diluted magnetic semiconductor ZnO:Eu obtained by combustion reaction." Cerâmica 66, no. 379 (2020): 262–68. http://dx.doi.org/10.1590/0366-69132020663792882.

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Abstract Eu-doped semiconductor matrix of ZnO at concentrations of 0.05 and 0.10 mols was synthesized by combustion reaction, using zinc nitrate, europium nitrate, and urea as fuel. In order to analyze the effect of europium concentration and sintering on the structure, band gap, magnetic and morphological properties of ZnO, the samples were sintered at 1100 °C for 30 min and analyzed before and after sintering via X-ray diffraction, ultraviolet and visible spectroscopy, vibrant sample magnetometry, and scanning electron microscopy. From the results obtained, it was found that there was the fo

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8

Bonanni, A. "Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths." Semiconductor Science and Technology 22, no. 9 (2007): R41—R56. http://dx.doi.org/10.1088/0268-1242/22/9/r01.

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9

Newman, N., S. Y. Wu, H. X. Liu, et al. "Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applications." physica status solidi (a) 203, no. 11 (2006): 2729–37. http://dx.doi.org/10.1002/pssa.200669636.

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10

Karki, R., K. Khatri, K. Adhikari, N. P. Adhikari, and N. Pantha. "First Principles Study of Structural, Electronic and Magnetic Properties of Defected (Monovacant) Hexagonal Boron Nitride Sheet." Journal of Nepal Physical Society 7, no. 4 (2021): 19–27. http://dx.doi.org/10.3126/jnphyssoc.v7i4.42927.

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The structural, electronic, and magnetic properties of vacancy structures with triangular shape are related to the defect in single hexagonal boron nitride (h-BN) sheet. It is investigated by using density functional theory calculations. The first-principles calculations based GGA functionals have been implemented to study the structural, electronic and magnetic properties of pure and defected hexagonal boron nitride (h-BN) monolayer sheet using Quantum ESPRESSO (QE) package, 6.5 version. The calculated values of formation energy reveal the structural stability of the defected systems. The for

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11

Li, Hengshuai, Haiquan Hu, Chenglin Bai, Chunjiang Bao, Zhenbao Feng, and Feng Guo. "The metal-free magnetism and ferromagnetic narrow gap semiconductor properties in graphene-like carbon nitride." Physica B: Condensed Matter 555 (February 2019): 91–95. http://dx.doi.org/10.1016/j.physb.2018.11.003.

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12

Dinh, Van An, Kanozuri Sato, and Hiroshi Katayama-Yoshida. "Enhancement ofTCby a carrier codoping method with size compensation for nitride-based ferromagnetic dilute magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5705—S5709. http://dx.doi.org/10.1088/0953-8984/16/48/032.

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13

Rouchdi, M., E. Salmani, M. Dehmani, et al. "First-principles calculations of electronic, magnetic and optical properties of HoN doped with TM (Ti, V, Cr, Mn, Co and Ni)." International Journal of Modern Physics B 32, no. 05 (2018): 1850048. http://dx.doi.org/10.1142/s0217979218500480.

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Using the first-principles calculations within the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA), the structural, optical and magnetic properties of rare-earth nitride Ho[Formula: see text]TM[Formula: see text]N doped with transition metal (TM) atoms (Ti, V, Cr, Mn, Co and Ni) are investigated as a function the generalized gradient approximation and self-interaction correction (GGA–SIC) approximation. The optical properties are studied in detail by using ab-initio calculations. Using GGA–SIC we have showed that the bandgap value is in good agreeme

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14

Abdullahi, Yusuf Zuntu, Tiem Leong Yoon, and Abdullahi Anderson Kassimu. "Metal-free ferromagnetic semiconductor: Mechanical, electronic and magnetic properties of boron doped graphitic carbon nitride (g−C6N6) sheet." Materials Chemistry and Physics 254 (November 2020): 123470. http://dx.doi.org/10.1016/j.matchemphys.2020.123470.

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15

Shamsul, MA, M. Shahjahan, and MM Rahman. "Calculation of Ferromagnetic State and Critical Temperature in Transition Metal Doped III-V Wurtzite Semiconductors." Journal of Bangladesh Academy of Sciences 41, no. 2 (2018): 217–25. http://dx.doi.org/10.3329/jbas.v41i2.35499.

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The magnetic properties and electronic states of the transition metal doped III-V wurtzite compounds (A1−xMx)N are calculated using Korringa-Kohn-Rostoker Green’s function method combined with the coherent potential approximation, where A = Al, Ga and M = 3d transition metal atoms namely V, Cr, Mn, Fe, Co, Ni and x is the fractional concentration of M. The positive value of the energy difference between ferromagnetic (FM) state and disordered local magnetic moment (DLM) state per unit cell denotes the magnetic phase stability. The total energy difference (EDLMEFM) is used to estimate the Curie

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16

Wang, Zhen-Hua, Dian-Yu Geng, Da Li, and Zhi-Dong Zhang. "Cluster spin-glasslike behavior in nanoparticles of diluted magnetic semiconductors ZnS:Mn." Journal of Materials Research 22, no. 9 (2007): 2376–83. http://dx.doi.org/10.1557/jmr.2007.0317.

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Zn1−xMnxS nanoparticles with x = 0.08, 0.16, and 0.32 were synthesized by a coprecipitation reaction between nitrate and sodium sulfide at room temperature in air. The magnetic properties of the Zn1−xMnxS nanoparticles were investigated by alternating-current (ac) susceptibility and direct-current (dc) magnetization measurements. The Mn3O4 phase was observed to exist in the Zn1−xMnxS nanoparticles as x ⩾ 0.16. The actual concentrations (x) of Mn-doped ZnS nanoparticles were determined by energy-dispersive x-ray analysis (EDAX) to be 0.06, 0.11, and 0.20, respectively, corresponding to the init

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17

Wang, Ping, Ding Wang, Shubham Mondal, Mingtao Hu, Jiangnan Liu, and Zetian Mi. "Dawn of nitride ferroelectric semiconductors: from materials to devices." Semiconductor Science and Technology, February 1, 2023. http://dx.doi.org/10.1088/1361-6641/acb80e.

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Abstract III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, BAlN, and hBN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperatu

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18

Sato, Kazunori, Tetsuya Fukushima, and Hiroshi Katayama-Yoshida. "Spinodal Decomposition and Super-Paramagnetism in Dilute Magnetic Nitride Semiconductors." MRS Proceedings 955 (2006). http://dx.doi.org/10.1557/proc-0955-i01-01.

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ABSTRACTWe discuss origin of ferromagnetism in dilute magnetic semiconductors (DMS) and propose accurate calculation method for Curie temperature from first-principles. For more realistic materials design, we simulate inhomogeneous impurity distribution due to the spinodal decomposition in DMS from first-principles. Combining these techniques, we discuss super-paramagnetism and blocking phenomena in DMS and propose fabrication method of DMS with high blocking temperature.

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19

Asahi, H., S. Hasegawa, Y. K. Zhou, and S. Emura. "Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics." MRS Proceedings 1290 (2011). http://dx.doi.org/10.1557/opl.2011.585.

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ABSTRACTTransition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are

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20

Ma, Yandong, Ying Dai, and Baibiao Huang. "Ferromagnetism in undoped semiconductors." MRS Proceedings 1370 (2011). http://dx.doi.org/10.1557/opl.2011.895.

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ABSTRACTThe so-called “d0” magnetism observed in semiconductors, which is not caused by partially filled d orbitals, has challenged our conventional understanding on the origin of magnetism. One class of semiconductor materials showing d0 ferromagnetism is undoped oxides and nitrides. Here, we review the ferromagnetic properties of undoped GaN and MgO based on our recent investigations. It is revealed that the room-temperature ferromagnetism originates from the anion dangling bonds associated with the surface cation-vacancies. And the magnetism of ferromagnetic coupling between the vacancy ind

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21

Devese, Sam, Catherine Pot, Franck Natali, et al. "Non-volatile Memory Storage in Tri-Layer Structures Using the Intrinsically Ferromagnetic Semiconductors GdN and DyN." Nano Express, January 3, 2023. http://dx.doi.org/10.1088/2632-959x/acaf92.

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Abstract We report on the potential use of the intrinsic ferromagnetic rare earth nitride (REN) semiconductors as ferromagnetic electrodes in tunnelling magnetoresistance and giant magnetoresistance device structures for non-volatile memory storage devices. Non-volatile memory elements utilising magnetic materials have been an industry standard for decades. However, the typical metallic ferromagnets and dilute magnetic semiconductors used lack the ability to independently tune the magnetic and electronic properties. In this regard, the rare earth nitride series offer an ultimately tuneable gro

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22

Blinowski, J., P. Kacman, and T. Dietl. "Kinetic Exchange Vs. Room Temperature Ferromagnetism in Diluted Magnetic Semiconductors." MRS Proceedings 690 (2001). http://dx.doi.org/10.1557/proc-690-f6.9.

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ABSTRACTGuided by the internal-reference rule and the known band o sets in - and - diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the doping by shallow impurities may lead to the ferromagnetism driven by the double exchange. e consider the dependence of kinetic exchange on the p-d hybridization, on the electronic con gurations of the magnetic ions, and on the energies of the charge transfer betw een the valence band of host materials and the magnetic ions. n the case o

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23

Anton, E. M., S. Granville, A. Engel, et al. "Superconductivity in the ferromagnetic semiconductor samarium nitride." Physical Review B 94, no. 2 (2016). http://dx.doi.org/10.1103/physrevb.94.024106.

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24

Berkman, Erkan Acar, Mason J. Reed, F. Erdem Arkun, et al. "The Effect of Mn Concentration on Curie Temperature and Magnetic Behavior of MOCVD Grown GaMnN Films." MRS Proceedings 834 (2004). http://dx.doi.org/10.1557/proc-834-j7.3.

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ABSTRACTWe report on the growth and characterization of dilute magnetic semiconductor GaMnN showing ferromagnetism behavior above room temperature. GaMnN films were grown by MOCVD using (EtCp2)Mn as the precursor for in-situ Mn doping. Structural characterization of the GaMnN films was achieved by XRD, SIMS and TEM measurements. XRD and TEM confirmed that the films were single crystal solid solutions without the presence of secondary phases. SIMS analysis verified that Mn was incorporated homogeneously throughout the GaMnN layer which was ∼0.7μm thick. Ferromagnetic behavior for these films wa

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25

Kucukgok, Bahadir, Liqin Su, Elisa N. Hurwitz, et al. "Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications." MRS Proceedings 1329 (2011). http://dx.doi.org/10.1557/opl.2011.1236.

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ABSTRACTGaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck ef

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26

Ghosh, Abhijit, N. Ukah, R. K. Gupta, P. K. Kahol, and K. Ghosh. "Effect of Partial Oxygen Pressure on Structural, Electrical, and Magneto transport Properties of Cobalt Doped Indium Oxide Thin Films." MRS Proceedings 1183 (2009). http://dx.doi.org/10.1557/proc-1183-ff06-15.

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AbstractDilute magnetic semiconductors are ferromagnetic semiconductors recently discovered in nitride and oxide semiconductors by incorporating a small percentage of magnetic atoms into the semiconductors host. Recently it is reported that the structural and electrical properties of pure indium oxide can be modified by growth parameters. In this paper we investigate magneto-transport properties of Co-doped In2O3 dilute magnetic semiconductors thin films grown on sapphire and quartz substrates using pulsed laser deposition technique. The effect of partial oxygen pressure on structural, electri

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27

Moeck, Peter, Lori Noice, Chunfei Li, et al. "Structural Effects of Transition Metal Oxide Calcinations on Wurtzite Type Semiconductors That are Ferromagnetic at Room Temperature." MRS Proceedings 999 (2007). http://dx.doi.org/10.1557/proc-0999-k03-01.

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AbstractGallium nitride powders and zinc oxide powders were each calcined with a few weight percent of copper oxide and/or magnesium oxide either in air or N2. Powder X-ray diffractometry, transmission electron microscopy, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy were performed in order to observe calcination induced structural effects on these wurtzite type semiconductors. We note that our earlier magnetic results on Cu doped GaN are qualitatively consistent with recent first principle calculations [Wu et al., Appl. Phys. Lett. 89 (2006) 62505].

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28

Amine Réda, Mohamed, Redouane Rami, Lalla Btissam Drissi, Ilham Aberdane, and Rachid Ahl Laamara. "Transition Metal doping and co-doping effect on electronic and magnetic properties of zb-ScN." European Physical Journal Applied Physics, April 25, 2023. http://dx.doi.org/10.1051/epjap/2023220290.

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The ab-initio study of electronic and magnetic properties and Curie temperature of Transition Metal (TM) doped ScN diluted magnetic semiconductor (DMS) are calculated using LDA method implemented in (KKR-CPA). The totl and partial density of states (DOS) of pure zinc blend ScN as well as TM doped compounds are plotted for different concentrations of dopants. It is shown that the Sc substituted by TM materials induces a half metallic character in the system for different concentrations except for Sc1−xCoxN (x > 14%) and Sc1−xNixN (x > 6%). Also, the Sc1−xVxN, Sc1−xCrxN , Sc1−xMnxN compoun

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29

Maji, Rita, and Joydeep Bhattacharjee. "Hybrid superlattices of graphene and hexagonal boron nitride: A ferromagnetic semiconductor at room temperature." Physical Review B 99, no. 12 (2019). http://dx.doi.org/10.1103/physrevb.99.125409.

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30

Wang, Boyu, Jing Ning, Jincheng Zhang, Dong Wang, Chi Zhang, and Yue Hao. "Tunable d0 magnetism of hexagonal boron nitride introduced through an adjacent doping strategy." Applied Physics Letters 123, no. 5 (2023). http://dx.doi.org/10.1063/5.0161271.

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To meet the current requirements of diluted magnetic semiconductors (DMSs) resulting from continuous advancements in spintronics, designing d0 DMSs with high stability, spin polarization, and Curie temperature is essential. Present research on introducing d0 magnetism is limited to monatomic doping, lacking regulation measures for local magnetic moments and long range magnetic coupling. Herein, an adjacent doping strategy is employed to introduce degrees of freedom for tuning the magnetic properties of d0 DMSs. It is observed that by introducing Si and O atoms as central and adjacent dopants,

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