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Dissertations / Theses on the topic 'Nitrure de tungstene'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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1

BOUKHRIS, LOUBNA. "Realisation et analyse des proprietes des couches minces de nitrure de tungstene utilisees comme barriere antidiffusion dans les circuits electroniques." Nantes, 1998. http://www.theses.fr/1998NANT2016.

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Ce travail a pour objet la realisation et la caracterisation des couches minces de nitrure de tungstene par pulverisation diode continue. Au cours de cette etude nous avons examine l'influence des differents parametres de la decharge sur les proprietes des couches deposees. L'emploi de diverses methodes d'analyses, xps, rbs et diffraction de rayons x a permis d'identifier les differents produits obtenus notamment : - leurs structures (les phases presentes, orientations preferentielles, taille des grains et contraintes) - leurs compositions (nature et liaison des especes constituant la couche).

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2

Bourhila, Noureddine. "Etude de la réaction directe tungstène-silicium : application à un procédé de métallisation autoalignée en microélectronique." Grenoble 1, 1989. http://www.theses.fr/1989GRE10121.

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La reduction des dimensions et l'integration d'un grand nombre de dispositifs sur un meme puce imposent des contraintes technologiques de plus en plus complexes. En particulier le choix du materiau pour la metallisation (contacts et interconnexions) est essentiel. Les siliciures de metaux refractaires, par leur bonne stabilite thermique et leur caractere metallique, constituent d'excellents candidats pour cette technologie a tres grande echelle d'integration. Dans notre travail, nous nous sommes interesses au siliciure de tungstene. Son elaboration ainsi que son application en metallisation au

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3

Chauret, Christian. "Effect of tungsten on nitrate and nitrite reductases in Azospirillum brasilense SP 7." Thesis, McGill University, 1990. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=59635.

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Azospirillum brasilense reduced nitrate in W-containing Mo-limited medium, but at lower rates than in W-free medium. However nitrate reduction by Paracoccus denitrificans was completely suppressed under the same conditions. Nitrite reductase activity of growing A. brasilense was negatively affected by tungstate. Nitrite accumulation was shown to be the result of an inhibitory effect of nitrate on nitrite reductase activity. Both resting whole cell and cell-free extract preformed nitrite reductase activities were equally affected by increasing levels of tungstate. Preformed nitrate reductase ac

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4

Benyahya, Mohamed. "Nitruration sous ammoniac de couches minces de W déposées sur Si : caractérisations physicochimiques et électriques." Grenoble 1, 1989. http://www.theses.fr/1989GRE10048.

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Nous etudions la formation directe de structure si/wsi#2/si#3n#4 et si/wsi#2/wn#x par recuit sous nh#3 entre 600 et 1100#oc de structures si/w/a-sih et si/w avec des couches minces de w (200 et 2000 a) et de a-sih (150 a) en vue de l'utilisation de wsi#2 couvert de couches a barriere de diffusion comme contact ou interconnexion en microelectronique

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5

Jabbour, Darine. "Influence de la composition et de la structure des hétéropolyanions sur leurs propriétés électrochimiques et électrocatalytiques." Paris 11, 2005. http://www.theses.fr/2005PA112209.

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Dans ce travail nous avons étudié les effets de l'accumulation des centres Nill et CuII sur les propriétés électrocatalytiques des hétéropolyanions. Les polyoxométallates substitués par le Nickel sélectionnés pour cette étude sont formés de l'unité lacunaire [B,α-PW9O34]9-diversement substituée. La stabilité et te comportement redox de ces composés en solution aqueuse ont été évalués par spectroscopie UV/visible et par voltammétrie cyclique et fonction du pH, dans le but de déterminer les espèces éventuellement utiles en électrocatalyse. Des études électrochimiques particulières concernent les

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6

Dutron, Anne-Marie. "Dépots LPCVD de siliciures ternaires Me-Si-N (Me= Re, W, Ti, Ta) pour des applications en microélectronique." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0092.

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Dans la metallisation avancee des circuits integres, le cuivre est envisage comme futur metal d'interconnexion et de contact. Cependant, son utilisation reste conditionnee par l'usage d'une barriere de diffusion tres performante susceptible de bloquer sa migration lors de traitements thermiques dans les materiaux voisins constitutifs des circuits integres. Cette etude a concerne l'elaboration par lpcvd de siliciures ternaires de type me-si-n (me= re, w, ti, ta) sur substrat de sio#2, et plus particulierement elle s'est orientee vers le choix d'une barriere de diffusion adequate repondant aux c

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7

Ekstrom, Bradley Mitsuharu. "Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc4882/.

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The integration of copper (Cu) and dielectric materials has been outlined in the International Technology Roadmap for Semiconductors (ITRS) as a critical goal for future microelectronic devices. A necessity toward achieving this goal is the development of diffusion barriers that resolve the Cu and dielectric incompatibility. The focus of this research examines the potential use of tungsten nitride as a diffusion barrier by characterizing the interfacial properties with Cu and evaluating its process capability for industrial use. Tungsten nitride (β-W2N) development has been carried out using

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8

Lucy, Toby E. "Synthesis, characterization and reactivity of tungsten oxynitride." Thesis, This resource online, 1996. http://scholar.lib.vt.edu/theses/available/etd-11012008-063455/.

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9

Jackson, Andrew B. Templeton J. L. "Nitrile reduction and carbon monoxide replacement in tungstenII bisacetylacetonate complexes." Chapel Hill, N.C. : University of North Carolina at Chapel Hill, 2008. http://dc.lib.unc.edu/u?/etd,1895.

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Thesis (Ph. D.)--University of North Carolina at Chapel Hill, 2008.<br>Title from electronic title page (viewed Dec. 11, 2008). "...in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Department of Chemistry." Discipline: Chemistry; Department/School: Chemistry.

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10

Garrett, Andrew D. Templeton J. L. "Transformations of nitrile, amido, and imine ligands in Tp[prime] tungsten complexes." Chapel Hill, N.C. : University of North Carolina at Chapel Hill, 2007. http://dc.lib.unc.edu/u?/etd,810.

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Thesis (Ph. D.)--University of North Carolina at Chapel Hill, 2007.<br>Title from electronic title page (viewed Dec. 18, 2007). "... in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Department of Chemistry." Discipline: Chemistry; Department/School: Chemistry. On t.p., [prime] is the symbol.

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11

Rodrigues, José. "Decomposition de l'hydrazine sur des carbures et nitrures de molybdene et de tungstene. Application aux micropropulseurs de satellite." Paris 6, 1996. http://www.theses.fr/1996PA066362.

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Ce travail a pour but la preparation de carbures et nitrures de molybdene et de tungstene, comme substituts de metaux nobles, pour la decomposition catalytique de l'hydrazine dans les micropropulseurs de satellite. La reactivite de ces catalyseurs a ete etudiee a l'echelle du laboratoire et a l'echelle du micropropulseur. Les principales etapes sont les suivantes: (1) developpement d'une methode de mise en forme (extrudes) des oxydes precurseurs de molybdene et de tungstene ; (2) mise au point d'une methode d'introduction de polymeres, tels que des celluloses microcristallines, pour creer une

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12

Cook, Grant O. III. "Joining Polycrystalline Cubic Boron Nitride and Tungsten Carbide by Partial Transient Liquid Phase Bonding." BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2366.

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Friction stir welding (FSW) of steel is often performed with an insert made of polycrystalline cubic boron nitride (PCBN). Specifically, MS80 is a grade of PCBN made by Smith MegaDiamond that has been optimized for the FSW process. The PCBN insert is attached to a tungsten carbide (WC) shank by a compression fitting. However, FSW tools manufactured by this method inevitably fail by fracture in the PCBN. Permanently bonding PCBN to WC would likely solve the fracturing problem and increase the life of PCBN FSW tools to be economically viable. Partial transient liquid phase (PTLP) bonding, a proc

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13

Schluschaß, Bastian. "N2 Splitting and Functionalization in the Coordination Sphere of Tungsten." Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2020. http://hdl.handle.net/21.11130/00-1735-0000-0005-1508-B.

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14

Montes, De Oca-Valero Javier-Arturo. "Élaboration du carbure et du nitrure de titane par des procédés chimiques et physiques en phase vapeur : caractérisation de la microstructure." Bordeaux 1, 2002. http://www.theses.fr/2002BOR12582.

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Le carbure et le nitrure de titane ont été élaborés par des procédés chimiques et physiques en phase vapeur. Ces procédés ont permis l'obtention d'un revêtement céramique épais et dense en vue de la protection d'un dispositif métallique en tungstène. L'influence des différents paramètres expérimentaux, propres à chaque procédé, a été étudiée sur la germination, la microstructure et la texturation des revêtments, tout en intégrant l'interaction avec le substrat. L'analyse des contraintes résiduelles, réalisée par la méthode de sin2Psy, a permis d'expliquer le comportement vis-à-vis de la fissur

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15

Fox, Alexander Ray 1979. "Nitride, imide, and azide chemistry of anilide-supported tungsten and uranium complexes by Alexander Ray Fox." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/58200.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 2010.<br>Vita. Page 213 blank. Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>The uranium(III) tris(anilide) complex (THF)U(N[t-Bu]Ar) 3 reacts with MN 3 (M = Na, [N(n-Bu) 4]) to form the bimetallic diuranium(IV/IV) salts M[(p-N)(U(N[t-Bu]Ar) 3)2]. The stability of the U=N=U core across multiple charge states is illustrated by stepwise chemical oxidation of Na[(p- N)(U(N[t-Bu]Ar) 3)2] to the corresponding neutral diuranium(V/IV) and cationic diuranium(V/V) derivatives. Metallonitrene-l

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16

Montes, de Oca Valero Arturo Javier. "Elaboration du carbure et du nitrure de titane par ds procédés chimiques et physiques en phase vapeur : caractérisation de la microstructure." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2002. http://tel.archives-ouvertes.fr/tel-00007441.

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Le carbure et le nitrure de titane ont été élaborés par des procédés chimiques et physiques en phase vapeur. Ces procédés ont permis l'obtention d'un revêtement céramique épais et dense en vue de la protection d'un dispositif métallique en tungstène. L'influence des différents paramètres expérimentaux, propres à chaque procédé, a été étudiée sur la germination, la microstructure et la texturation des revêtements, tout en intégrant l'interaction avec le substrat. L'analyse des contraintes résiduelles, réalisée par la méthode de sin2 ψ , a permis d'expliquer le comportement vis-à-vis de la fissu

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17

Strahin, Brandon L. "The Effect of Engineered Surfaces on the Mechanical Properties of Tool Steels Used for Industrial Cutting Tools." University of Akron / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=akron1506692623324192.

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18

Monteil, Christophe. "Structures multicouches W/a-SiNx:H déposées pae P. E. C. V. D : application aux capteurs capacitifs." Montpellier 2, 1993. http://www.theses.fr/1993MON20225.

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Des structures multicouches w/a-sinx:h appliquees a la realisation d'un capteur capacitif ont ete deposees par pecvd basse frequence. Une etude microstructurale du nitrure de silicium amorphe hydrogene a ete conduite par xps, aes et irtf, ainsi que par ellipsometrie et absorption uv: des caracterisations electriques ont ete menees sur une sequence mim. L'adherence des couches de w sur le dielectrique a ete amelioree par le depot d'une couche de wsix a l'interface w/a-sinx:h. Les proprietes electriques des materiaux conducteurs ont ete etudiees: leurs modifications structurales ont ete mises en

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19

Wong, Jian-Sang, and 黃建生. "The Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/36694481373790012698.

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碩士<br>國立交通大學<br>材料科學與工程系<br>89<br>A comprehensive study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-type GaN has been made. Both TiWNx and WNx film were deposited by reactive dc sputtering method, the electrical and physical characteristics of the Schottky contact were investigated as a function of annealing temperature. The TiWNx Schottky contact was only thermally stable up to 650℃, the values of ideality factor and barrier height after 650℃ annealing were about 1.14 and 0.76 eV respectively. The Schottky diode characteristics degraded after 750℃ and 8

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20

Deng, I.-Chung, and 鄧一中. "The Diffusion Barriers of Tungsten Nitride." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/76076421834275334041.

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碩士<br>國立交通大學<br>電子研究所<br>84<br>This thesis studies the novel tungsten nitride (WNx) film prepared by nitriding the amorphous chemical vapor deposited tungsten (CVD-W) films. Tungsten films were deposited with conditions followed, the flow rate of SiH4/WF6 is 12.5/5 sccm, temperature is 300℃ and presure is 100 mTorr. The in-situ nitridating process is executed in N2 plasma without breaking vaccum. After nitriding process, secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spetros

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21

林志雄. "Processing of Chromium Tungsten Nitride Hard Coatings for Glass Molding." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/97745209797183375420.

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碩士<br>國立清華大學<br>材料科學工程學系<br>93<br>CrWN coatings with tungsten content ranged from 4.1 at.% to 23.4 at.% were fabricated by adjusting the input power on a tungsten target through the ion beam assisted deposition (IBAD). After tungsten doping, lattice parameter of the CrWN was expanded from 4.16 to 4.22 Ǻ, and only the face centered cubic phase of the CrN was observed. Due to the solid solution strengthening, an apparent increase on the hardness was exhibited, and maximum hardness, 23.9 GPa was reached. In addition, the critical load and residual stress were measured. It was found that coati

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22

Chen, Chong-An, and 陳重安. "Physical Vapor Deposition of Tungsten-Silicon-Nitride Diffusion Barrier for Copper Metallization." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/55695445327697069994.

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23

Mayet, Abdulilah M. "Amorphous Metal Tungsten Nitride and its Application for Micro and Nanoelectromechanical Applications." Diss., 2016. http://hdl.handle.net/10754/608753.

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The objective of this doctoral thesis is to develop, engineer and investigate an amorphous metal tungsten nitride (aWNx) and to study its functionality for applications focused on electromechanical system at the nano-scale. Charge transport based solid state device oriented complementary metal oxide semiconductor (CMOS) electronics have reached a level where they are scaled down to nearly their fundamental limits regarding switching speed, off state power consumption and the on state power consumption due to the fundamental limitation of sub-threshold slope (SS) remains at 60 mV/dec. NEM swit

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24

ZHUANG, XIU-HUI, and 莊琇惠. "Low pressure chemical vapor deposition of tungsten nitride thin films from bisimidotungsten complex." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/94314455870241454187.

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25

Chen, Guan-cheng, and 陳冠成. "Deposition of nitride hard films to improve the cutting performance of tungsten carbide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/34533922753467152363.

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碩士<br>龍華科技大學<br>工程技術研究所<br>100<br>In this study, disposable tungsten carbide turning of AISI 304 stainless steel, the application of Taguchi experimental design (the Taguchi methods), L9 (33) mixed orthogonal array to observe the different turning parameters (spindle speed (A), feed rate (B),depth of cut (C)) of AISI 304 stainless steel. With the gray relational - Taguchi analysis for multiple quality characteristics best turning parameters (A2B1C1), with the experimental verification. In addition, DC co-sputter deposition CrWN film on the tungsten carbide using Taguchi experimental design L9

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26

Chen, Yan Tong, and 陳彥彤. "Fabrication of Nitride Thin Films by Co-Sputtering of High Entropy Alloys and Tungsten." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/fj4ax7.

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碩士<br>龍華科技大學<br>機械工程系碩士班<br>107<br>This work studies the co-deposition by DC-reactive magnetron sputtering of tungsten (W) coatings over soda glass and SUS 304 stainless steel substrates. A high entropy equimolar alloy (AlCrNbSiTiV) target (diameter 2 in) and a W target (diameter 3 in) were bombarded with Ar and N2 reactant gasses to form plasma. The N2/(Ar+N2) flow ratio (0, 5, 10, 15, 20%) was adjusted under a fixed sputtering power (200 W), a fixed reaction time (15 min), a fixed substrate temperature (150°C) and observed the influence of these parameters over the properties such as surface

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27

Huang, Guo-Syong, and 黃國雄. "Effect of Tungsten Nitride Buffer Layer on the Structure and Properties of CrWN Hard Films." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/e4gt48.

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碩士<br>龍華科技大學<br>機械工程系碩士班<br>105<br>Nitride hard film with high hardness and high chemical stability, can improve the tool wear resistance, increase tool life and reduce production costs. In this study, DC magnetron sputtering (DCMS) nitride multilayer (substrate / W or WN buffer layer / CrWN),cermet milling cutter (NX2525), SUS304 stainless steel and glass were used as substrate. Application of Taguchi experimental design, L9 (34) mixed orthogonal table, to explore the buffer layer (W or WN) sputtering parameters, Including the substrate temperature (oC), nitrogen and argon ratio (%), working

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28

Tsou, Hung-Chang, and 鄒宏昌. "Study of Two Dimensional Material Tungsten Disulfide Thin Film Transistors with Hexagonal Boron Nitride Substrate." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/2fyvex.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>105<br>In this thesis, the mechanically exfoliated 2D material WS2 nanosheet was successfully used to fabricate thin film transistor. Using 3M scotch tape method and PDMS stamp can avoid the residues of 3M scotch tape being left on the surface of WS2. Using optical microscopy and atomic force microscopy, the WS2 flakes with appropriate thickness can be chosen. Ohmic contact of WS2 TFT can be achieved by low work function metal Chromium. The highest on/off current ratio of MoS2 TFT was up to 7 order of magnitude and the mobility of 38 cm2/V-sec was achieved. Th

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29

Wu, Jin-Bao, and 吳金寶. "Thermal Decomposition of Tungsten Nitride CVD Precursors on Cu(111) and Si(100) (2x1) Surfaces." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/93095904342058135697.

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博士<br>國立交通大學<br>應用化學系<br>91<br>Thermal decomposition of (t-BuN)2W(NHBu-t)2, bis(tertbutylimido)bis (tertbutylamido)tungsten (BTBTT), a tungsten nitride CVD precursor, on Cu(111) and Si(100)(2´1) surfaces have been investigated separately by means of temperature programmed desorption (TPD), synchrotron-based X-ray photoelectron spectroscopy (SR-XPS) and low-energy electron diffraction (LEED). For the thermal decomposition of BTBTT on Cu(111), TPD results indicate the formation of various products that include t-butylamine generated from a-H abstraction, isobutylene from g-H elimination, acetoni

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30

Tu, Ling-Hsin, and 杜林炘. "Stress Control of Silicon-Rich Nitride Membrance and Tungsten-Tantalum-Nitrogen Absorber for X-Ray Mask." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/99352542142184830109.

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碩士<br>國立交通大學<br>應用化學研究所<br>85<br>X-ray lithography has the advantages of better resolution (limited at 0.05 um and below), larger depth of focus, less diffraction effect, nearly no substrate reflection, nearly no standing wave, and larger exposure area etc. X-ray lithography will be one of the major technologies to fabricate IGbit DRAM (design rule 0.18 um) in the future. In x-ray lithography, mask fabrication is the key issue. This thesis studies the fabrication low stress x-ray mask. Using silicon-rich nitride as membrane and W-Ta-N allov as absorber. 　　The stress of silicon nitride(Si3N

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31

Chia-JuiHsu and 許嘉睿. "Effects of Tungsten Addition on Mechanical and Tribological Properties of Carbon Nitride Prepared by DC Magnetron Sputtering." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/bg4me5.

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碩士<br>國立成功大學<br>機械工程學系<br>102<br>This thesis studies the mechanical and tribological properties of tungsten-doped carbon nitride coating deposited by unbalanced DC magnetron sputtering using nitrogen-argon mixture gas. We first deposited the carbon nitrite coating on three different types of interlayer—Ti, Ti/TiN, and Ti/TiC—and chose the interlayer with the best tribological properties as the basis to study the optimal coating parameters (the tungsten target current varied from 0 to 0.9 A.). For the mechanical properties, we measured the surface morphology with roughness testing and scanning

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32

Lin, Chung-Kai, and 林仲凱. "Electrical Resistivity Minimization of Chemical Vapor Deposited Titanium Nitride Barrier layers and Tungsten plugs for Integrated Circuit Interconnects." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/67572700598624925043.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>102<br>To scale-down dynamic random access memories (DRAMs) to the 40-30 nm nodes, it is desirable to have materials of better gap filling and lower resistivity for metal interconnects to meet the design criteria. Titanium nitride (TiN) and tungsten (W) are currently the mostly used barrier layer and plug, respectively, because of the excellent step coverage and good material stability. In this thesis, we discussed the influence of chemical vapor deposition (CVD) conditions of TiN and W thin film on the reduction in the electrical resistivity of the barrier

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33

陸玟成. "Effect of N2/Ar flow ration on the growth of tungsten nitride films on Si by ration frequency sputtering." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/93184976183644324672.

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碩士<br>國立臺灣科技大學<br>化學工程技術研究所<br>86<br>W2NX thin films were grown onto Si<100>substrates under different sputtering conditions of N2/Ar flow ratios by RF magnetron sputtering method. Surface profiler and scanning electron microscopy (SEM) were used to obtain the thickness of thin films. The structure, orientation and morphology of these films were investigated using X-ray diffraction (XRD)and atomic force microscopy (AFM). By means of X-ray photoelectron spectroscopy (XPS), the composition of thin films were verified. AES depth profile analysis shows the diffusion of Cu in Cu/W2N1.26/Si structur

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34

HUANG, YUNG-TING, and 黃詠廷. "Effect of Tungsten-doping in Chromium Nitride Based Films on Oxidation Resistance and Thermal Electricity Deposited on Ferritic Stainless Steel." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/m5a27e.

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碩士<br>國立高雄大學<br>化學工程及材料工程學系碩士班<br>105<br>Bipolar plates materials were used for solid oxide fuel cell accounted for 80% of weight and 45% of cost overall, which must have a good formability and low cost. Therefore ferritic stainless steel has been chosen. Considering the influence of working environment, bipolar plate also must have good high temperature oxidation resistance and high electrical conductivity. Fe-Cr-Mn alloy can form spinel structure which has good electrical conductivity in the surface of oxide scale, and protects inner layer chromia from rapid oxidation. In this experiment, Fe

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35

Guruvenket, S. "Plasma Surface Engineering - Studies On Nitride Coatings And Surface Modification Of Polymers." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1460.

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