Journal articles on the topic 'Nm and 32 nm'
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Wisely, D. R. "32 channel WDM multiplexer with 1 nm channel spacing and 0.7 nm bandwidth." Electronics Letters 27, no. 6 (1991): 520. http://dx.doi.org/10.1049/el:19910326.
Full textFernandes, Leonardo Agostini, and Luiz Henrique Lucas Barbosa. "breve análise exegética de Nm 10,29-32." Revista de Cultura Teológica, no. 102 (October 1, 2022): 287–306. http://dx.doi.org/10.23925/rct.i102.58815.
Full textAsenov, Asen. "Variability Headaches in Sub-32 nm CMOS." ECS Transactions 25, no. 7 (2019): 131–36. http://dx.doi.org/10.1149/1.3203949.
Full textKurd, Nasser A., Subramani Bhamidipati, Chris Mozak, et al. "A Family of 32 nm IA Processors." IEEE Journal of Solid-State Circuits 46, no. 1 (2011): 119–30. http://dx.doi.org/10.1109/jssc.2010.2079430.
Full textJaatinen, E., and N. Brown. "A simple external iodine stabilizer applied to 633 nm, 612 nm and 543 nm He-Ne lasers." Metrologia 32, no. 2 (1995): 95–101. http://dx.doi.org/10.1088/0026-1394/32/2/004.
Full textMaharrey, J. A., R. C. Quinn, T. D. Loveless, et al. "Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions." IEEE Transactions on Nuclear Science 60, no. 6 (2013): 4399–404. http://dx.doi.org/10.1109/tns.2013.2288572.
Full textSomra, Neha, and Ravinder Singh Sawhney. "32 nm Gate Length FinFET: Impact of Doping." International Journal of Computer Applications 122, no. 6 (2015): 11–14. http://dx.doi.org/10.5120/21703-4816.
Full textBohnenstiehl, Brent, Aaron Stillmaker, Jon J. Pimentel, et al. "KiloCore: A 32-nm 1000-Processor Computational Array." IEEE Journal of Solid-State Circuits 52, no. 4 (2017): 891–902. http://dx.doi.org/10.1109/jssc.2016.2638459.
Full textDeren P.J., Watras A., and Stefanska D. "32-21." Optics and Spectroscopy 132, no. 1 (2022): 123. http://dx.doi.org/10.21883/eos.2022.01.52997.32-21.
Full textNoh, Heeso, and Jai-Min Choi. "One-Way Zero Reflection in an Insulator-Metal-Insulator Structure Using the Transfer Matrix Method." Photonics 8, no. 1 (2020): 8. http://dx.doi.org/10.3390/photonics8010008.
Full textGao, Ping, Na Yao, Changtao Wang, et al. "Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens." Applied Physics Letters 106, no. 9 (2015): 093110. http://dx.doi.org/10.1063/1.4914000.
Full textOjeda-Rojas, Oscar A., Angela Maria M. Gonella-Diaza, Gustavo L. Sartorello, and Augusto H. Hauber Gameiro. "PSVIII-11 Agent-based simulation model to evaluate the economic performance of reproductive programs in beef cattle." Journal of Animal Science 99, Supplement_3 (2021): 428–29. http://dx.doi.org/10.1093/jas/skab235.768.
Full textWilk, Seth J., William Lepkowski, and Trevor J. Thornton. "32 dBm Power Amplifier on 45 nm SOI CMOS." IEEE Microwave and Wireless Components Letters 23, no. 3 (2013): 161–63. http://dx.doi.org/10.1109/lmwc.2013.2245413.
Full textJotwani, Ravi, Sriram Sundaram, Stephen Kosonocky, et al. "An x86-64 Core in 32 nm SOI CMOS." IEEE Journal of Solid-State Circuits 46, no. 1 (2011): 162–72. http://dx.doi.org/10.1109/jssc.2010.2080530.
Full textPark, Joon-Min, Ilsin An, and Hye-Keun Oh. "Resist Reflow Process for 32 nm Node Arbitrary Pattern." Japanese Journal of Applied Physics 48, no. 4 (2009): 046501. http://dx.doi.org/10.1143/jjap.48.046501.
Full textYadav, Vinamrata, Nikhil Saxena, and Amit Rajput. "Process Variation and Optimization of Two Stage CMOS Operational Amplifier at 45 nm and 32 nm Technology." Journal of Computational and Theoretical Nanoscience 14, no. 8 (2017): 3653–56. http://dx.doi.org/10.1166/jctn.2017.6999.
Full textSchenk, Mirjam, Stephan R. Krutzik, Peter A. Sieling, et al. "NOD2 triggers an interleukin-32–dependent human dendritic cell program in leprosy." Nature Medicine 18, no. 4 (2012): 555–63. http://dx.doi.org/10.1038/nm.2650.
Full textOjeda-Rojas, Oscar Alejandro, Angela M. Gonella-Diaza, Daniel Bustos Coral, et al. "PSXI-1 Agent-based simulation model to evaluate the technical performance of reproductive programs in beef cattle." Journal of Animal Science 98, Supplement_4 (2020): 385. http://dx.doi.org/10.1093/jas/skaa278.677.
Full textRuhl, Gregory, Saurabh Dighe, Shailendra Jain, Surhud Khare, and Sriram R. Vangal. "IA-32 Processor with a Wide-Voltage-Operating Range in 32-nm CMOS." IEEE Micro 33, no. 2 (2013): 28–36. http://dx.doi.org/10.1109/mm.2013.8.
Full textKuenstner, J. Todd, and Karl H. Norris. "Spectrophotometry of Human Hemoglobin in the near Infrared Region from 1000 to 2500 nm." Journal of Near Infrared Spectroscopy 2, no. 2 (1994): 59–65. http://dx.doi.org/10.1255/jnirs.32.
Full textVahidi-Ferdowsi, P., J. Mehrzad, A. M. Malvandi, and S. Hosseinkhani. "Bioluminescence-based detection of astrocytes apoptosis and ATP depletion induced by biologically relevant level aflatoxin B1." World Mycotoxin Journal 11, no. 4 (2018): 589–98. http://dx.doi.org/10.3920/wmj2017.2275.
Full textNguyen, H. V., and Youngmin Kim. "Low-Power Fully Digital Voltage Sensor using 32-nm FinFETs." IEIE Transactions on Smart Processing and Computing 5, no. 1 (2016): 10–16. http://dx.doi.org/10.5573/ieiespc.2016.5.1.10.
Full textPepe, Domenico, and Domenico Zito. "32 dB Gain 28 nm Bulk CMOS W-Band LNA." IEEE Microwave and Wireless Components Letters 25, no. 1 (2015): 55–57. http://dx.doi.org/10.1109/lmwc.2014.2370251.
Full textJoyner Jr., William H., and David C. Yeh. "Guest Editors' Introduction: System IC Design Challenges beyond 32 nm." IEEE Design & Test of Computers 25, no. 4 (2008): 294–95. http://dx.doi.org/10.1109/mdt.2008.95.
Full textAllgair, John, Benjamin Bunday, Aaron Cordes, et al. "Metrology Requirements for the 32 nm Technology Node and Beyond." ECS Transactions 18, no. 1 (2019): 151–60. http://dx.doi.org/10.1149/1.3096443.
Full textXu, Yao, Qiang Wu, Xuelong Shi, and Yiming Gu. "DOF and Coherence Optimization in Sub-32 nm Contact Lithography." ECS Transactions 44, no. 1 (2019): 257–65. http://dx.doi.org/10.1149/1.3694325.
Full textFerriss, Mark, Alexander Rylyakov, Jose A. Tierno, Herschel Ainspan, and Daniel J. Friedman. "A 28 GHz Hybrid PLL in 32 nm SOI CMOS." IEEE Journal of Solid-State Circuits 49, no. 4 (2014): 1027–35. http://dx.doi.org/10.1109/jssc.2014.2299273.
Full textCai, Ming, Karthik Ramani, Michael Belyansky, et al. "Stress Liner Effects for 32-nm SOI MOSFETs With HKMG." IEEE Transactions on Electron Devices 57, no. 7 (2010): 1706–9. http://dx.doi.org/10.1109/ted.2010.2049076.
Full textSkotnicki, Thomas. "Materials and device structures for sub-32 nm CMOS nodes." Microelectronic Engineering 84, no. 9-10 (2007): 1845–52. http://dx.doi.org/10.1016/j.mee.2007.04.091.
Full textHou, Fu-Ju, Po-Jung Sung, Fu-Kuo Hsueh, et al. "32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction." IEEE Transactions on Electron Devices 63, no. 5 (2016): 1808–13. http://dx.doi.org/10.1109/ted.2015.2466236.
Full textThornton, Trevor J., William Lepkowski, and Seth J. Wilk. "Impact Ionization in SOI MESFETs at the 32-nm Node." IEEE Transactions on Electron Devices 63, no. 10 (2016): 4143–46. http://dx.doi.org/10.1109/ted.2016.2601241.
Full textYuan, X., T. Shimizu, U. Mahalingam, et al. "Transistor mismatch in 32 nm high-k metal-gate process." Electronics Letters 46, no. 10 (2010): 708. http://dx.doi.org/10.1049/el.2010.0343.
Full textMarathe, Radhika, Bichoy Bahr, Wentao Wang, Zohaib Mahmood, Luca Daniel, and Dana Weinstein. "Resonant Body Transistors in IBM's 32 nm SOI CMOS Technology." Journal of Microelectromechanical Systems 23, no. 3 (2014): 636–50. http://dx.doi.org/10.1109/jmems.2013.2283720.
Full textPetrillo, Karen, Yayi Wei, R. Brainard, et al. "Are extreme ultraviolet resists ready for the 32 nm node?" Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 6 (2007): 2490. http://dx.doi.org/10.1116/1.2787815.
Full textGibbons, Francis P., Alex P. G. Robinson, Richard E. Palmer, Sara Diegoli, Mayandithevar Manickam, and Jon A. Preece. "Fullerene Resist Materials for the 32 nm Node and Beyond." Advanced Functional Materials 18, no. 13 (2008): 1977–82. http://dx.doi.org/10.1002/adfm.200701155.
Full textJin, Bo Kyeong, Hyunsu Kim, Cho Ae Lee, and Hye-Rim Kim. "Comparison of the Gut Microbiota of Preterm Infants Born before 32-Week Gestation with Feeding Intolerance." Neonatal Medicine 32, no. 1 (2025): 21–29. https://doi.org/10.5385/nm.2025.32.1.21.
Full textXu, Zhi-Chao, Duo Pan, Wei Zhuang, and Jing-Biao Chen. "Experimental Scheme of 633 nm and 1359 nm Good-Bad Cavity Dual-Wavelength Active Optical Frequency Standard." Chinese Physics Letters 32, no. 8 (2015): 083201. http://dx.doi.org/10.1088/0256-307x/32/8/083201.
Full textJung, Eui, Xiaoying Hui, Hanjiang Zhu, et al. "Effect of iron and silica nanoparticles’ size on in vitro human skin binding and penetration." Toxicology Research and Application 3 (January 1, 2019): 239784731989305. http://dx.doi.org/10.1177/2397847319893054.
Full textEngland, Troy D., Rajan Arora, Zachary E. Fleetwood, et al. "An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits." IEEE Transactions on Nuclear Science 60, no. 6 (2013): 4405–11. http://dx.doi.org/10.1109/tns.2013.2289368.
Full textJacke, T., R. Todt, R. Meyer, and M. C. Amann. "32 nm digitally tunable laser diode with a 0.58 nm wavelength grid using a vertically integrated Mach-Zehnder interferometer." Applied Physics Letters 87, no. 20 (2005): 201113. http://dx.doi.org/10.1063/1.2132531.
Full textThool, Monu, Girish D Korde, and Anant W Hinganikar. "Review for Design Considerations of SAR ADC in CMOS 32 NM Technology." International Journal of Science and Research (IJSR) 11, no. 4 (2022): 516–19. http://dx.doi.org/10.21275/sr22405181953.
Full textFebiantoro, Muhamad Rony, Lutfi Rohman, and Sutisna Sutisna. "Analysis Curie Temperature and Hysteresis La0,7Sr0,3MnO3 with Micromagnetic Simulation." Computational And Experimental Research In Materials And Renewable Energy 3, no. 2 (2020): 8. http://dx.doi.org/10.19184/cerimre.v3i2.23545.
Full textDas, Pankaj Kumar, Anurag Yadav, and Nidhi Chandra. "Analysis of Delay and Dynamic Crosstalk in Spatially Arranged Mixed CNT Bundle Interconnects at Different Technology Nodes." Key Engineering Materials 994 (November 5, 2024): 39–45. http://dx.doi.org/10.4028/p-vcvy4l.
Full textTrojman, Lionel, Eduardo Holguin, Marco Villegas, Luis-Miguel Procel, and Ramiro Taco. "From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits." Electronics 11, no. 4 (2022): 525. http://dx.doi.org/10.3390/electronics11040525.
Full textGaertner, A. A., and L. P. Boivin. "Some problems in realizing an infrared spectral-irradiance scale from 1500 nm to 2400 nm at the NRC." Metrologia 32, no. 6 (1995): 615–19. http://dx.doi.org/10.1088/0026-1394/32/6/43.
Full textKim, Hanna, Jieun Hwang, Chan Kim, et al. "Quality Improvement Project to Reduce Admission Hypothermia of Preterm Infants Born at Less than 32 Weeks or 1,500 g." Neonatal Medicine 31, no. 2 (2024): 38–46. http://dx.doi.org/10.5385/nm.2024.31.2.38.
Full textYang, Hyo Ju, Soo Yeon Lim, Hyun Soo Kim, Chang Won Choi, and Young Hwa Jung. "Associations between Maternal sFlt-1/PlGF Ratio and Perinatal and Neonatal Outcomes in Newborns Born to Mothers with Preeclampsia." Neonatal Medicine 30, no. 3 (2023): 61–68. http://dx.doi.org/10.5385/nm.2023.30.3.61.
Full textDu Yuchan, 杜宇禅, 李海亮 Li Hailiang, 史丽娜 Shi Lina, 李春 Li Chun, and 谢常青 Xie Changqing. "Integrated Development of Extreme Ultraviolet Lithography Mask at 32 nm Node." Acta Optica Sinica 33, no. 10 (2013): 1034002. http://dx.doi.org/10.3788/aos201333.1034002.
Full textSomra, Neha, Kanika Mishra, and Ravinder Singh. "Optimizing Current Characteristics of 32 nm FinFET by Controlling Fin Width." Communications on Applied Electronics 2, no. 7 (2015): 1–5. http://dx.doi.org/10.5120/cae2015651795.
Full textPark, Jin-Hyung, Hao Cui, Jong-Young Cho, et al. "Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm." Journal of The Electrochemical Society 157, no. 6 (2010): H607. http://dx.doi.org/10.1149/1.3368675.
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