Relevant bibliographies by topics / Non Equilibrium Green's Function

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Non Equilibrium Green's Function'

Author: Grafiati
Published: 4 June 2021
Last updated: 10 March 2023

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Journal articles on the topic "Non Equilibrium Green's Function"

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Stefanucci, Gianluca, Andrea Marini, and Stefano Bellucci. "Non‐Equilibrium Green's Functions." physica status solidi (b) 256, no. 7 (July 2019): 1900335. http://dx.doi.org/10.1002/pssb.201900335.

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Winge, David O., Martin Franckié, Claudio Verdozzi, Andreas Wacker, and Mauro F. Pereira. "Simple electron-electron scattering in non-equilibrium Green's function simulations." Journal of Physics: Conference Series 696 (March 2016): 012013. http://dx.doi.org/10.1088/1742-6596/696/1/012013.

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Takeda, Hiroshi, and Nobuya Mori. "Mode-Coupling Effects in Non-Equilibrium Green's Function Device Simulation." Japanese Journal of Applied Physics 44, no. 4B (April 21, 2005): 2664–68. http://dx.doi.org/10.1143/jjap.44.2664.

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YAMAMOTO, Kouhei, Hiroyuki ISHII, Kenji HIROSE, and Nobuhiko KOBAYASHI. "Thermal Conduction Calculation of Nanowire by Non-equilibrium Green's Function." Hyomen Kagaku 32, no. 7 (2011): 410–15. http://dx.doi.org/10.1380/jsssj.32.410.

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Koshelkin, A. V. "Two-particle Green's functions in non-equilibrium matter." Physics Letters B 471, no. 2-3 (December 1999): 202–7. http://dx.doi.org/10.1016/s0370-2693(99)01373-8.

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Koshelkin, A. V. "Two-particle Green's functions in non-equilibrium matter." Czechoslovak Journal of Physics 50, S2 (February 2000): 120–25. http://dx.doi.org/10.1007/s10582-000-0036-7.

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Camsari, Kerem Y., Samiran Ganguly, Deepanjan Datta, and Supriyo Datta. "Non-Equilibrium Green's Function Based Circuit Models for Coherent Spin Devices." IEEE Transactions on Nanotechnology 18 (2019): 858–65. http://dx.doi.org/10.1109/tnano.2018.2889443.

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Zhao, Renqiang, Yao Luo, Fan Jiang, Yuxin Dai, Zengying Ma, Junwen Zhong, Peng Wu, Tao Zhou, and Yucheng Huang. "Ultrahigh-stability SnOX (X = S, Se) nanotubes with a built-in electric field as a highly promising platform for sensing NH3, NO and NO2: a theoretical investigation." Journal of Materials Chemistry A 10, no. 14 (2022): 7948–59. http://dx.doi.org/10.1039/d2ta00463a.

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Combining density functional theory calculations with non-equilibrium Green's-function-based simulations, we systematically investigated the sensing performance of novel ultrahigh-stability SnOX (X = S, Se) nanotubes toward NH3, NO, and NO2.
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He, Yu, Yu Wang, Gerhard Klimeck, and Tillmann Kubis. "Non-equilibrium Green's functions method: Non-trivial and disordered leads." Applied Physics Letters 105, no. 21 (November 24, 2014): 213502. http://dx.doi.org/10.1063/1.4902504.

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Subhan, Fazle, M. Umar Farooq, and Jisang Hong. "Bias-dependent transport properties of passivated tilted black phosphorene nanoribbons." Physical Chemistry Chemical Physics 20, no. 16 (2018): 11021–27. http://dx.doi.org/10.1039/c8cp00090e.

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Dissertations / Theses on the topic "Non Equilibrium Green's Function"

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Gustafsson, Alexander. "Modeling of non-equilibrium scanning probe microscopy." Licentiate thesis, Linnéuniversitetet, Institutionen för fysik och elektroteknik (IFE), 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-46448.

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The work in this thesis is basically divided into two related but separate investigations. The first part treats simple chemical reactions of adsorbate molecules on metallic surfaces, induced by means of a scanning tunneling probe (STM). The investigation serves as a parameter free extension to existing theories. The theoretical framework is based on a combination of density functional theory (DFT) and non-equilibrium Green's functions (NEGF). Tunneling electrons that pass the adsorbate molecule are assumed to heat up the molecule, and excite vibrations that directly correspond to the reaction coordinate. The theory is demonstrated for an OD molecule adsorbed on a bridge site on a Cu(110) surface, and critically compared to the corresponding experimental results. Both reaction rates and pathways are deduced, opening up the understanding of energy transfer between different configurational geometries, and suggests a deeper insight, and ultimately a higher control of the behaviour of adsorbate molecules on surfaces. The second part describes a method to calculate STM images in the low bias regime in order to overcome the limitations of localized orbital DFT in the weak coupling limit, i.e., for large vacuum gaps between a tip and the adsorbate molecule. The theory is based on Bardeen's approach to tunneling, where the orbitals computed by DFT are used together with the single-particle Green's function formalism, to accurately describe the orbitals far away from the surface/tip. In particular, the theory successfully reproduces the experimentally well-observed characteristic dip in the tunneling current for a carbon monoxide (CO) molecule adsorbed on a Cu(111) surface. Constant height/current STM images provide direct comparisons to experiments, and from the developed method further insights into elastic tunneling are gained.
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Covito, Fabio [Verfasser], and Angel [Akademischer Betreuer] Rubio. "An efficient ab-initio non-equilibrium Green's function approach to carrier dynamics in many-body interacting systems / Fabio Covito ; Betreuer: Angel Rubio." Hamburg : Staats- und Universitätsbibliothek Hamburg, 2020. http://d-nb.info/1218688459/34.

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Kruglyak, Yu A. "Non-Equilibrium Green’s Function Method in Matrix Representation and Model Transport Problems of Nanoelectronics." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35352.

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Non-equilibrium Green’s functions method in matrix representation is presented and applied to model transport problems for 1D and 2D conductors using a nearest neighbor orthogonal tight-binding model in the frame of the «bottom-up» approach of modern nanoelectronics. Simple methods to account for electric contacts in Schrödinger equation to solve quantum electron transport problems are given. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35352
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Fonseca, James Ernest. "Accurate treatment of interface roughness in nanoscale double-gate metal oxide semiconductor field effect transistors using non-equilibrium Green's functions." Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176318345.

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Odell, Anders. "Quantum transport in photoswitching molecules : An investigation based on ab initio calculations and Non Equilibrium Green Function theory." Licentiate thesis, KTH, Materials Science and Engineering, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4790.

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Molecular electronics is envisioned as a possible next step in device miniaturization. It is usually taken to mean the design and manufacturing of electronic devices and applications where organic molecules work as the fundamental functioning unit. It involves the easurement and manipulation of electronic response and transport in molecules attached to conducting leads. Organic molecules have the advantages over conventional solid state electronics of inherent small sizes, endless chemical diversity and ambient temperature low cost manufacturing.

In this thesis we investigate the switching and conducting properties of photochromic dithienylethene derivatives. Such molecules change their conformation in solution when acted upon by light. Photochromic molecules are attractive candidates for use in molecular electronics because of the switching between different states with different conducting properties. The possibility of optically controlling the conductance of the molecule attached to leads may lead to new device implementations.

The switching reaction is investigated with potential energy calculations for different values of the reaction coordinate between the closed and the open isomer. The electronic and atomic structure calculations are performed with density functional theory (DFT). It is concluded that there is a large potential energy barrier separating the open and closed isomer and that switching between open and closed forms must involve excited states.

The conducting properties of the molecule inserted between gold leads is calculated within the Non Equilibrium Green Function theory. The transmission function is calculated for the two isomers with different basis sizes for the gold contacts, as well as the electrostatic potential, for finite applied bias voltages. We conclude that a Au 6s basis give qualitatively the same result as a Au spd basis close to the Fermi level. The transmission coefficient at the Fermi energy is around 10 times larger in the closed molecule compared to the open. This will result in a large difference in conductivity. It is also found that the large difference in conductivity will remain for small applied bias voltages. The results are consistent with earlier work.

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Monturet, Serge. "Inelastic effects in electronic currents at the nanometer scale." Phd thesis, Université Paul Sabatier - Toulouse III, 2008. http://tel.archives-ouvertes.fr/tel-00469906.

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This thesis deals with inelastic effects in electronic currents. We developed a time-dependent technique and show that this approach gives rich insight into electron-phonon coupling during transport. We compare our results with a time-independent technique and analyse the validity of our model. Finally, the results of a quantum chemistry calculation are presented in the framework of scanning tunneling miscroscopy (STM). We study the chemisorption of a tetrathiafulvalene molecule on a gold surface by performing the calculation of the charge transfer, the induced dipole, and the STM images using the density functional theory.
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MOTTA, CARLO. "First-principles study of electronic transport in organic molecular junctions." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40094.

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This thesis focuses on the theoretical description of coherent electronic transport in organic molecular junctions. The ab-initio theoretical methods and the theory of quantum transport in nanoscale systems are presented. The Landauer theory of transport formulated in terms of Green's function is analyzed by means of the embedding theory for a simplified model in which electrons are considered as moving in a one-dimensional modulated potential introduced to simulate resonant tunneling junctions. Following the introductory section, relevant systems of interest from both basic and technology points of view are investigated. The transport properties of two-dimensional graphene/graphene-nanoribbon (GNR) heterojunctions are shown to critically depend upon the geometrical features of the GNR. Diarylethene junctions with graphene electrodes are comprehensively analyzed, with emphasis on the photoswitching properties of the system. The use of graphene electrodes can improve the performance of such switching junctions as compared with the use of other substrates. A full characterization of a platinum/pyrazine bistable junction studied in a recent experiment is then established. The switching mechanism has been determined as a result of a molecule-lead configurational rearrangement. A final section is devoted to the description of a new methodology to calculate the elastic lifetimes of electronic states of adsorbates on surfaces. The method has been applied to dye molecules on TiO2 substrates, which are relevant for photovoltaics applications. The effects of modification of the spacers between the acceptor and donor part of the dyes are analyzed.
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Barr, Joshua. "Transport in Interacting Nanostructures." Diss., The University of Arizona, 2013. http://hdl.handle.net/10150/301551.

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Transport through nanostructures is studied at the many-body level using exact diagonalization and nonequilibrium Green's functions. Organic molecular junctions are a particular focus because of their technological promise. Work is presented regarding: (1) A π-electron model of organic molecular junctions developed using effective field theory; (2) series transmission and transmission node structure in interacting systems; (3) the effect of interactions on quantum interference and thermoelectricity in polycyclic junctions; and (4) nanoscale transport calculations using self-consistent statistical ensembles.
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Edirisinghe, Pathirannehelage Neranjan S. "Charge Transfer in Deoxyribonucleic Acid (DNA): Static Disorder, Dynamic Fluctuations and Complex Kinetic." Digital Archive @ GSU, 2011. http://digitalarchive.gsu.edu/phy_astr_diss/45.

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The fact that loosely bonded DNA bases could tolerate large structural fluctuations, form a dissipative environment for a charge traveling through the DNA. Nonlinear stochastic nature of structural fluctuations facilitates rich charge dynamics in DNA. We study the complex charge dynamics by solving a nonlinear, stochastic, coupled system of differential equations. Charge transfer between donor and acceptor in DNA occurs via different mechanisms depending on the distance between donor and acceptor. It changes from tunneling regime to a polaron assisted hopping regime depending on the donor-acceptor separation. Also we found that charge transport strongly depends on the feasibility of polaron formation. Hence it has complex dependence on temperature and charge-vibrations coupling strength. Mismatched base pairs, such as different conformations of the G・A mispair, cause only minor structural changes in the host DNA molecule, thereby making mispair recognition an arduous task. Electron transport in DNA that depends strongly on the hopping transfer integrals between the nearest base pairs, which in turn are affected by the presence of a mispair, might be an attractive approach in this regard. I report here on our investigations, via the I –V characteristics, of the effect of a mispair on the electrical properties of homogeneous and generic DNA molecules. The I –V characteristics of DNA were studied numerically within the double-stranded tight-binding model. The parameters of the tight-binding model, such as the transfer integrals and on-site energies, are determined from first-principles calculations. The changes in electrical current through the DNA chain due to the presence of a mispair depend on the conformation of the G・A mispair and are appreciable for DNA consisting of up to 90 base pairs. For homogeneous DNA sequences the current through DNA is suppressed and the strongest suppression is realized for the G(anti)・A(syn) conformation of the G・A mispair. For inhomogeneous (generic) DNA molecules, the mispair result can be either suppression or an enhancement of the current, depending on the type of mispairs and actual DNA sequence.
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Nadimi, Ebrahim. "Quantum Mechanical and Atomic Level ab initio Calculation of Electron Transport through Ultrathin Gate Dielectrics of Metal-Oxide-Semiconductor Field Effect Transistors." Doctoral thesis, Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800477.

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The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanical effects, which are no longer negligible. Gate tunneling current is one of such effects, that is responsible for high power consumption and high working temperature in microprocessors. This in turn put limits on further down scaling of devices. Therefore modeling and calculation of tunneling current is of a great interest. This work provides a review of existing models for the calculation of the gate tunneling current in MOSFETs. The quantum mechanical effects are studied with a model, based on a self-consistent solution of the Schrödinger and Poisson equations within the effective mass approximation. The calculation of the tunneling current is focused on models based on the calculation of carrier’s lifetime on quasi-bound states (QBSs). A new method for the determination of carrier’s lifetime is suggested and then the tunneling current is calculated for different samples and compared to measurements. The model is also applied to the extraction of the “tunneling effective mass” of electrons in ultrathin oxynitride gate dielectrics. Ultrathin gate dielectrics (tox<2 nm) consist of only few atomic layers. Therefore, atomic scale deformations at interfaces and within the dielectric could have great influences on the performance of the dielectric layer and consequently on the tunneling current. On the other hand the specific material parameters would be changed due to atomic level deformations at interfaces. A combination of DFT and NEGF formalisms has been applied to the tunneling problem in the second part of this work. Such atomic level ab initio models take atomic level distortions automatically into account. An atomic scale model interface for the Si/SiO2 interface has been constructed and the tunneling currents through Si/SiO2/Si stack structures are calculated. The influence of single and double oxygen vacancies on the tunneling current is investigated. Atomic level distortions caused by a tensile or compression strains on SiO2 layer as well as their influence on the tunneling current are also investigated
Die vorliegende Arbeit beschäftigt sich mit der Berechnung von Tunnelströmen in MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). Zu diesem Zweck wurde ein quantenmechanisches Modell, das auf der selbstkonsistenten Lösung der Schrödinger- und Poisson-Gleichungen basiert, entwickelt. Die Gleichungen sind im Rahmen der EMA gelöst worden. Die Lösung der Schrödinger-Gleichung unter offenen Randbedingungen führt zur Berechnung von Ladungsverteilung und Lebensdauer der Ladungsträger in den QBSs. Der Tunnelstrom wurde dann aus diesen Informationen ermittelt. Der Tunnelstrom wurde in verschiedenen Proben mit unterschiedlichen Oxynitrid Gatedielektrika berechnet und mit gemessenen Daten verglichen. Der Vergleich zeigte, dass die effektive Masse sich sowohl mit der Schichtdicke als auch mit dem Stickstoffgehalt ändert. Im zweiten Teil der vorliegenden Arbeit wurde ein atomistisches Modell zur Berechnung des Tunnelstroms verwendet, welche auf der DFT und NEGF basiert. Zuerst wurde ein atomistisches Modell für ein Si/SiO2-Schichtsystem konstruiert. Dann wurde der Tunnelstrom für verschiedene Si/SiO2/Si-Schichtsysteme berechnet. Das Modell ermöglicht die Untersuchung atom-skaliger Verzerrungen und ihren Einfluss auf den Tunnelstrom. Außerdem wurde der Einfluss einer einzelnen und zwei unterschiedlich positionierter neutraler Sauerstoffleerstellen auf den Tunnelstrom berechnet. Zug- und Druckspannungen auf SiO2 führen zur Deformationen in den chemischen Bindungen und ändern den Tunnelstrom. Auch solche Einflüsse sind anhand des atomistischen Modells berechnet worden
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Books on the topic "Non Equilibrium Green's Function"

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Pourfath, Mahdi. The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation. Vienna: Springer Vienna, 2014. http://dx.doi.org/10.1007/978-3-7091-1800-9.

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Kadanoff, Leo P. Quantum statistical mechanics: Green's function methods in equilibrium and nonequilibrium problems. Redwood City, Calif: Addison-Wesley Pub. Co., Advanced Book Program, 1989.

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Pourfath, Mahdi. Non-Equilibrium Green's Function Method for Nanoscale Device Simulation. Springer Wien, 2014.

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Pourfath, Mahdi. The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation. Pourfath Mahdi, 2016.

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Pourfath, Mahdi. The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation. Pourfath Mahdi, 2014.

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Horing, Norman J. Morgenstern. Non-Equilibrium Green’s Functions: Variational Relations and Approximations for Particle Interactions. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198791942.003.0009.

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Chapter 09 Nonequilibrium Green’s functions (NEGF), including coupled-correlated (C) single- and multi-particle Green’s functions, are defined as averages weighted with the time-development operator U(t0+τ,t0). Linear conductivity is exhibited as a two-particle equilibrium Green’s function (Kubo-type formulation). Admitting particle sources (S:η,η+) and non-conservation of number, the non-equilibrium multi-particle Green’s functions are constructed with numbers of creation and annihilation operators that may differ, and they may be derived as variational derivatives with respect to sources η,η+ of a generating functional eW=TrU(t0+τ,t0)CS/TrU(t0+τ,t0)C. (In the non-interacting case this yields the n-particle Green’s function as a permanent/determinant of single-particle Green’s functions.) These variational relations yield a symmetric set of multi-particle Green’s function equations. Cumulants and the Linked Cluster Theorem are discussed and the Random Phase Approximation (RPA) is derived variationally. Schwinger’s variational differential formulation of perturbation theories for the Green’s function, self-energy, vertex operator, and also shielded potential perturbation theory, are reviewed. The Langreth Algebra arises from analytic continuation of integration of products of Green’s functions in imaginary time to the real-time axis with time-ordering along the integration contour in the complex time plane. An account of the Generalized Kadanoff-Baym Ansatz is presented.
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Nikolic, Branislav K., Liviu P. Zarbo, and Satofumi Souma. Spin currents in semiconductor nanostructures: A non-equilibrium Green-function approach. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.24.

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This article examines spin currents and spin densities in realistic open semiconductor nanostructures using different tools of quantum-transport theory based on the non-equilibrium Green function (NEGF) approach. It begins with an introduction to the essential theoretical formalism and practical computational techniques before explaining what pure spin current is and how pure spin currents can be generated and detected. It then considers the spin-Hall effect (SHE), and especially the mesoscopic SHE, along with spin-orbit couplings in low-dimensional semiconductors. It also describes spin-current operator, spindensity, and spin accumulation in the presence of intrinsic spin-orbit couplings, as well as the NEGF approach to spin transport in multiterminal spin-orbit-coupled nanostructures. The article concludes by reviewing formal developments with examples drawn from the field of the mesoscopic SHE in low-dimensional spin-orbit-coupled semiconductor nanostructures.
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Thygesen, K. S., and A. Rubio. Correlated electron transport in molecular junctions. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.23.

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This article focuses on correlated electron transport in molecular junctions. More specifically, it considers how electronic correlation effects can be included in transport calculations using many-body perturbation theory within the Keldysh non-equilibrium Green’s function formalism. The article uses the GW self-energy method (G denotes the Green’s function and W is the screened interaction) which has been successfully applied to describe quasi-particle excitations in periodic solids. It begins by formulating the quantum-transport problem and introducing the non-equilibrium Green’s function formalism. It then derives an expression for the current within the NEGF formalism that holds for interactions in the central region. It also combines the GW scheme with a Wannier function basis set to study electron transport through two prototypical junctions: a benzene molecule coupled to featureless leads and a hydrogen molecule between two semi-infinite platinum chains. The results are analyzed using a generic two-level model of a molecular junction.
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Golizadeh-Mojarad, Roksana, and Supriyo Datta. NEGF-based models for dephasing in quantum transport. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.3.

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This article describes the use of NEGF-based models for elastic dephasing in quantum transport. The non-equilibrium Green's function (NEGF) method provides a rigorous prescription for including any kind of dephasing mechanisms to any order starting from a microscopic Hamiltonian through an appropriate choice of the self-energy function. The article first introduces the general approach to quantum transport that provides a general method for modelling a wide class of nanotransistor and spin devices. It then discusses the effect of different types of dephasing on momentum and spin relaxation before considering three simple phenomenological choices of the self-energy function that allows one to incorporate spin, phase and momentum relaxation independently. It also looks at an example that takes into account these three types of dephasing mechanisms: the ‘spin-Hall’ effect.
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Yang, Jinlong, and Qunxiang Li. Theoretical simulations of scanning tunnelling microscope images and spectra of nanostructures. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.15.

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This article presents theoretical simulations of scanning tunnelling microscope (STM) images and spectra of nanostructures. It begins with an overview of the theories of STM and scanning tunnelling spectroscopy (STS), focusing on four main approaches: the perturbation or Bardeen approach, the Tersoff–Hamann approach and its extension, the scattering theory or Landauer–Bütticker approach, and the non-equilibrium Green's function or Keldysh approach. It then considers conventional STM and STS experimental investigations of various systems including clean surfaces, ad-atoms, single molecules, self-assembled monolayers, and nanostructures. It also discusses STM activities that go beyond conventional STM images and STS, such as functionalized STM tip, inelastic spectroscopy identification, manipulation, molecular electronics and molecular machines.
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Book chapters on the topic "Non Equilibrium Green's Function"

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Lannoo, Michel, and Marc Bescond. "Non-Equilibrium Green's Function Formalism." In Simulation of Transport in Nanodevices, 223–59. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781118761793.ch6.

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Rungger, Ivan, Andrea Droghetti, and Maria Stamenova. "Non-equilibrium Green’s Function Methods for Spin Transport and Dynamics." In Handbook of Materials Modeling, 957–83. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-44677-6_75.

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Rungger, Ivan, Andrea Droghetti, and Maria Stamenova. "Non-equilibrium Green’s Function Methods for Spin Transport and Dynamics." In Handbook of Materials Modeling, 1–27. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-42913-7_75-1.

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Neophytou, Neophytos. "Non-Equilibrium Green’s Function Method for Electronic Transport in Nanostructured Thermoelectric Materials." In SpringerBriefs in Physics, 59–80. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-38681-8_4.

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Fransson, Jonas. "Many-Body Operator Green Functions." In Non-Equilibrium Nano-Physics, 23–39. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9210-6_3.

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Keeling, Jonathan, Marzena H. Szymańska, and Peter B. Littlewood. "Keldysh Green’s function approach to coherence in a non-equilibrium steady state: connecting Bose-Einstein condensation and lasing." In Optical Generation and Control of Quantum Coherence in Semiconductor Nanostructures, 293–329. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12491-4_12.

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Karlsson, Daniel, and Robert van Leeuwen. "Non-equilibrium Green’s Functions for Coupled Fermion-Boson Systems." In Handbook of Materials Modeling, 367–95. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-44677-6_8.

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Karlsson, Daniel, and Robert van Leeuwen. "Non-equilibrium Green’s Functions for Coupled Fermion-Boson Systems." In Handbook of Materials Modeling, 1–29. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-42913-7_8-1.

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Afzalian, Aryan, Jean-Pierre Colinge, and Denis Flandre. "Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current Device Through 3D Non-Equilibrium Green Function Simulations." In Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 201–14. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_11.

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Lemasters, John J., Jo A. Freedman, Kenneth E. Fleishman, and Thomas L. Dawson. "ATP/2e− Stoichiometries for the Coupling Sites of Mitochondrial Oxidative Phosphorylation: Evaluation by Equilibrium and Non-Equilibrium Thermodynamics." In Integration of Mitochondrial Function, 155–68. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-2551-0_14.

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Conference papers on the topic "Non Equilibrium Green's Function"

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Datta, Supriyo. "Non-equilibrium green's function (NEGF) method: a different perspective." In 2015 International Workshop on Computational Electronics (IWCE). IEEE, 2015. http://dx.doi.org/10.1109/iwce.2015.7301951.

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Yasuda, H., T. Kubis, P. Vogl, N. Sekine, I. Hosako, and K. Hirakawa. "Non-equilibrium green's function calculation for terahertz quantum cascade lasers." In 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves (IORMMW-THz 2009). IEEE, 2009. http://dx.doi.org/10.1109/icimw.2009.5324924.

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Kurniawan, Oka, Ping Bai, and Er Ping Li. "Non-Equilibrium Green's Function Calculation of Optical Absorption in Nano Optoelectronic Devices." In 2009 13th International Workshop on Computational Electronics (IWCE 2009). IEEE, 2009. http://dx.doi.org/10.1109/iwce.2009.5091128.

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Hong, Ki-ha, Jongseob Kim, Sung-hoon Lee, Young-gu Jin, Sung-il Park, Mincheol Shin, Sung Suk, et al. "Channel Engineering of Silicon Nanowire Field Effect Transistor: Non-Equilibrium Green's Function Study." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306114.

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Yasuda, Hiroaki, Tillmann Kubis, and Kazuhiko Hirakawa. "Non-equilibrium Green's function calculation for GaN-based terahertz quantum cascade laser structures." In 2011 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2011). IEEE, 2011. http://dx.doi.org/10.1109/irmmw-thz.2011.6105199.

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Mahzoon, M. H., P. Danielewicz, and A. Rios. "Correlations within the non-equilibrium Green’s function method." In PROCEEDINGS OF THE 43RD INTERNATIONAL CONFERENCE APPLICATIONS OF MATHEMATICS IN ENGINEERING AND ECONOMICS: (AMEE’17). Author(s), 2017. http://dx.doi.org/10.1063/1.5016137.

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Jing Guo, Datta, Anantram, and Lundstrom. "Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism." In Electrical Performance of Electronic Packaging. IEEE, 2004. http://dx.doi.org/10.1109/iwce.2004.1407328.

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Carrillo-Nunez, Hamilton, Jaehyun Lee, Salim Berrada, Cristina Medina-Bailon, Mathieu Luisier, Asen Asenov, and Vihar P. Georgiev. "Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices." In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2018. http://dx.doi.org/10.1109/sispad.2018.8551629.

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Shaukat, Ayesha, and Naz E. Islam. "Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green's Function Formalism." In 2014 12th International Conference on Frontiers of Information Technology (FIT). IEEE, 2014. http://dx.doi.org/10.1109/fit.2014.76.

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Khan, H. R., D. Mamaluy, and D. Vasileska. "Modeling FinFETs using non-equilibrium green's function formalism: Influence of interface-roughness on device characteristics." In 7th IEEE International Conference on Nanotechnology. IEEE, 2007. http://dx.doi.org/10.1109/nano.2007.4601284.

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