Academic literature on the topic 'Non-evaporable getters'

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Journal articles on the topic "Non-evaporable getters"

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Park, Mi Young, Ho Ha, Won Baek Kim, Je Shin Park, Chang Youl Suh, and Saet Byul Woo. "Activation and Gas Sorption Properties of Nano-Size Titanium Powder Getters." Solid State Phenomena 124-126 (June 2007): 1281–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1281.

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Non-evaporable getters (NEGs) are characterized by two major properties i.e. the activation and gas sorption rate for specific gases. Most of the commercial getters are alloys composed of micron-size powders. There have been speculations on the advantage of using nanosize powders as getter material for the obvious increase in volume to surface area ratio and for effective reaction with gases on size reduced particles. In this study, titanium powders of about 80 nm were prepared by electrical wire explosion method and their gettering properties were measured in accordance to ASTM standard. The activation of nano-size titanium powders was completed at about 450oC and the sorption rate was over 4 times higher than those of the micron-size titanium powders.
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Ferrario, B., A. Figini, and M. Borghi. "A new generation of porous non-evaporable getters." Vacuum 35, no. 1 (January 1985): 13–17. http://dx.doi.org/10.1016/0042-207x(85)90070-3.

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Chiggiato, P. "Production of extreme high vacuum with non evaporable getters." Physica Scripta T71 (January 1, 1997): 9–13. http://dx.doi.org/10.1088/0031-8949/1997/t71/002.

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Setina, Janez, Sefer Avdiaj, and Bojan Erjavec. "Measuring volume ratios of vacuum vessels using non-evaporable getters." Vacuum 92 (June 2013): 20–25. http://dx.doi.org/10.1016/j.vacuum.2012.11.010.

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Bourim, El-Mostafa, Hee Kim, and Nak-Kwan Chung. "Development and Characterization of Non-Evaporable Getter Thin Films with Ru Seeding Layer for MEMS Applications." Micromachines 9, no. 10 (September 25, 2018): 490. http://dx.doi.org/10.3390/mi9100490.

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Mastering non-evaporable getter (NEG) thin films by elucidating their activation mechanisms and predicting their sorption performances will contribute to facilitating their integration into micro-electro-mechanical systems (MEMS). For this aim, thin film based getters structured in single and multi-metallic layered configurations deposited on silicon substrates such as Ti/Si, Ti/Ru/Si, and Zr/Ti/Ru/Si were investigated. Multilayered NEGs with an inserted Ru seed sub-layer exhibited a lower temperature in priming the activation process and a higher sorption performance compared to the unseeded single Ti/Si NEG. To reveal the gettering processes and mechanisms in the investigated getter structures, thermal activation effect on the getter surface chemical state change was analyzed with in-situ temperature XPS measurements, getter sorption behavior was measured by static pressure method, and getter dynamic sorption performance characteristics was measured by standard conductance (ASTM F798–97) method. The correlation between these measurements allowed elucidating residual gas trapping mechanism and prediction of sorption efficiency based on the getter surface poisoning. The gettering properties were found to be directly dependent on the different changes of the getter surface chemical state generated by the activation process. Thus, it was demonstrated that the improved sorption properties, obtained with Ru sub-layer based multi-layered NEGs, were related to a gettering process mechanism controlled simultaneously by gas adsorption and diffusion effects, contrarily to the single layer Ti/Si NEG structure in which the gettering behavior was controlled sequentially by surface gas adsorption until reaching saturation followed then by bulk diffusion controlled gas sorption process.
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Sciuccati, F., B. Ferrario, G. Gasparini, and L. Rosai. "In situ pumping with NEG (non-evaporable getters) during vacuum processing." Vacuum 38, no. 8-10 (January 1988): 765–69. http://dx.doi.org/10.1016/0042-207x(88)90460-5.

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Santucci, Alessia, Luca Farina, Silvano Tosti, and Antonio Frattolillo. "Novel Non-Evaporable Getter Materials and Their Possible Use in Fusion Application for Tritium Recovery." Molecules 25, no. 23 (December 1, 2020): 5675. http://dx.doi.org/10.3390/molecules25235675.

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Non-evaporable getters (NEGs) are metallic compounds of the IV group, particularly titanium and/or zirconium-based alloys and are usually used as pumps in vacuum technologies since they are able to sorb, by chemical reactions, most of the active gas molecules, with particular efficacy towards hydrogen isotopes. This work suggests an alternative application of these materials to fusion nuclear reactors, where there is the need to recover small amount of tritium from the large helium flow rate composing the primary coolant loop. Starting from the tritium mass balance inside the primary coolant loop, the amount of coolant to be routed inside the coolant purification system (CPS) is identified. Then a feasibility study, based on the bulk getter theory, is presented by considering three different commercial alloys, named ST707, ST101 and ZAO. The results provide the mass, the area and the regeneration parameters of the three different alloys necessary to fulfill the requirements of the CPS unit. By comparing the features of the three alloys, the ZAO material appears the most promising for the proposed application because it requires the lower amount of material and a lower number of regeneration cycles.
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Mazza, F., and C. Boffito. "Nonevaporable Getters: Properties and Applications." MRS Bulletin 15, no. 7 (July 1990): 50–52. http://dx.doi.org/10.1557/s0883769400059261.

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Many advanced technologies, such as surface science, semiconductor processing and high energy physics, call for vacuum levels of the order of 10−11 mbar and lower. These pressures can not be reached without a careful choice of materials, treatments, and evacuation means for the vacuum device involved. Non-evaporable getters (NEGs) are increasingly being recognized as an interesting and powerful solution for many vacuum problems. NEGs have been used extensively in sealed-off devices such as microwave tubes, traveling wave tubes, x-ray tubes, lamps, and infrared detector dewars, in which their main role is to assure the desired vacuum level throughout the life of the sealed device. The getter material can be considered as a chemical pump which removes the active gases in the residual atmosphere of the vacuum device by forming stable chemical compounds.The choice of materials, treatments, and structures of nonevaporable getter materials is critical for the optimization of the sorption and diffusion processes which are the basis of the NEG pumping mechanism. The effectiveness of this pumping mechanism at very low pressures, and the cleanliness and simplicity of operation have made this pumping approach ideal, in combination with other pumping technologies, for reaching the extreme high vacuums today's advanced technologies require. This article will explain the mechanism of the gettering process, describing materials, treatments, and structures used in standard vacuum practice, and will review some of the most typical and interesting applications.
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Boyko, Anton, Dahir Gaev, Sergei Timoshenkov, Yuri Chaplygin, and Vladimir Petrov. "The Study of Different Structuring Techniques for Creation of Non-Evaporable Getters." Materials Sciences and Applications 04, no. 08 (2013): 57–61. http://dx.doi.org/10.4236/msa.2013.48a007.

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Aleksandrova, M. V., Y. V. Nikolyukin, and Y. A. Kurganova. "Selection of composite material composition for non-evaporable getters of new generation." IOP Conference Series: Materials Science and Engineering 683 (December 13, 2019): 012022. http://dx.doi.org/10.1088/1757-899x/683/1/012022.

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Dissertations / Theses on the topic "Non-evaporable getters"

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Porcelli, T. "'SPUTTER-ION PUMPS: PERFORMANCE-ASSESSMENT AND NOBLE-GAS PUMPING OPTIMISATION IN VIEW OF THE COMBINATION WITH NON-EVAPORABLE GETTERS'." Doctoral thesis, Università degli Studi di Milano, 2016. http://hdl.handle.net/2434/350260.

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The pumping properties of sputter-ion pumps (SIPs) have been studied in view of the combination with non-evaporable getters (NEG) for ultra-high vacuum applications. Several diode and noble-diode SIPs have been tested on a dedicated test bench and a specific procedure has been tuned, which allows to obtain reliable and reproducible values of pumping speed after saturation for different gases. In addition, several innovative combinations of cathode materials have been investigated, aiming in particular at an optimised pumping of noble gases and methane. These gas species cannot be pumped by NEG and thus their sorption represents the main task of a SIP in a combination pump. In parallel, each pair of cathodes has been analysed by FESEM/EDX and XRD, in order to find any possible correlation between their crystal structure, the surface modifications occurred during their functioning and the measured sorption performances.
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Avdiaj, Sefer, Fisnik Aliaj, and Naim Syla. "Modelling the oxygen diffusion profile in St 707 non evaporable getter material." Diffusion fundamentals 20 (2013) 82, S. 1, 2013. https://ul.qucosa.de/id/qucosa%3A13669.

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Avdiaj, Sefer, Fisnik Aliaj, and Naim Syla. "Modelling the oxygen diffusion profile in St 707 non evaporable getter material." Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-183707.

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Enqvist, Erik. "Synthesis and Characterisation of Non-Evaporable Getter Films Based on Ti, Zr and V." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-77473.

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Non-evaporable getters (NEG) are widely used in ultra high vacuum (UHV) systems for particle accelerators to assure distributed pumping speed. By heating the NEG to an activation temperature, the oxide layer on the surface dissolves into the material, leaving a clean (activated) surface. The activated NEG surface is capable of chemisorbing most of the residual gases present in a UHV system and will act as a vacuum pump. NEG can be sputter deposited on the inner wall of vacuum chambers, turning the whole wall from a source of gas into a pump. At the largest particle accelerator in the world, the Large Hadron Collider, more than 6 km of beam pipe has been NEG coated. In this work, a DC magnetron sputtering system dedicated for coating cylindrical vacuum chambers with NEG has been assembled, installed and commissioned. The system has been used to do NEG depositions on inner walls of vacuum chambers. The vacuum performance of the coating has been measured in terms of pumping speed, electron stimulated desorption and activation temperature. In addition, the thin film composition and morphology has been investigated by scanning electron microscopy (SEM). The work has resulted in an operational DC magnetron sputtering system, which can be used for further studies of NEG materials and compositions.
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Li, Chien-Cheng, and 黎建成. "Fabrication and characterization of non-evaporable nanostructured porous Ti and Ti-Zr-V film getters." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/53175178050413228623.

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博士
國立成功大學
材料科學及工程學系碩博士班
96
According to the progress of microelectromechanical system (MEMS) technologies, the developments of the minimizing vacuum devices have largely increased for the past few years. The features of these devices are the wafer-level bonding fabrications and small vacuum cavity with several micro-gap. The development of the high pumping capacity, porous structure, and low activation temperature of the NEG are the main purpose in the minimizing vacuum devices. This is a key technique to decrease the production costs of bonding fabrications. In this study, the non-evaporable porous thin-film-type getters will be produced by magnetron sputtering. The NEG with high porosity and grain boundaries show a markedly high pumping speed to the gases for improving the capability to absorb the residual gases inside these sealed-off devices. In order to investigate the alloying effect on the activation temperature of the NEG, the research will be studied activation temperature of the NEG, which exhibited activation temperature below 250℃. Highly porous Ti and TiZrV getter film coatings have been successfully grown on (100) silicon substrates using the glancing angle dc magnetron sputtering method. The main deposition parameters that produce the porous Ti and the TiZrV films are the pressure of sputtering gas Ar and glancing angle at room temperature. The evolution of the microstructures of the Ti and the TiZrV films strongly depends on the sputtering flux rate, surface diffusion rate, nucleation rate, compositions, and self-shadowing geometry of the nuclei on the sputtering flux. The larger the glancing angle, the higher the porosity and specific surface area of the Ti and TiZrV films. The weight-gain results strongly depend on several factors, such as specific surface area, the surface structure of the getter film, the diffusion rate of O in the getter film, the reactivity of Ti, Zr, and V on O, and the order of the stabilities of Ti, Zr, and V oxides on the film’s surface. Porous Ti film absorbs oxygen better than porous TiZrV film does due to the its higher surface area and the high diffusion rate of O in Ti films. Highly porous Ti and TiZrV film getters on (100) silicon substrates were used to study the effects of alloy elements on activation process. The effect of activation temperature on the reducing degree of the porous Ti and TiZrV films were investigated by synchrotron radiation photoemission spectroscopy (SRPES). The carbon-element absorbed on the surface of the Ti film, exposed in air, will be transformed to a Ti carbide phase, however, that which is on the surface of the TiZrV film will be completely removed by a heating treatment at 250℃ or above. The oxidized Ti in porous TiZrV film is more easily reduced than that in the porous Ti films. The breakdown of V-O and Ti-O bonds on the TiZrV film surface is easier than that of the Zr-O bond. We suggest that the decrease of reducing temperature of oxidized TiZrV, comparing with that of oxidized Ti, is caused by the displacing reaction of Zr on oxidized Ti or oxidized V. The effects of activation temperature on the reducing degree of the dense and porous TiZrV films were investigated by synchrotron radiation photoemission spectroscopy. The dense and porous TiZrV films have similar composition and thickness, and their specific surface areas are 2 m2/g and 13 m2/g, respectively. Comparing the previous results of the porous TiZrV film, the activation degree of the porous TiZrV film is lower than that of the dense TiZrV film. To complete the activation treatment of the dense and porous TiZrV films, the activation temperature must be higher than 350℃ or the activation time must be longer than 30 minutes. TiZrV films, grown at the deposition angles of 0 and 70, were used for the study of the oxygen-adsorption process. When the deposition angle is 0, the appearance of the film is dense columnar structure. However, the film grown at the glancing angle of 70 is composed of porous and isolated columns, which are made of fine clusters. The activated TiZrV films have the capability to absorb oxygen at room temperature. The component Zr is more easily oxidized than Ti and V components when the TiZrV film is exposed in oxygen. The content of oxidized Ti and oxidized V does not linearly increase with the increase of oxygen exposure when there is a metallic Zr component on the surface of the film. Highly porous TiZrV films on (100) Si wafers were used to study the oxidation state of a film surface after three gas-adsorption/activation cycles using synchrotron radiation photoemission spectroscopy. The oxidation state and composition of porous TiZrV film are highly affected by the present conditions of air-exposure/activation cycles. In the porous TiZrV films after activation treatment, the C content on the surface of the films gradually increased with increasing air-exposure/activation cycles. In the porous TiZrV film after air-exposure treatment, the O content on the surface of the films decreased with increasing of air-exposure/activation cycles. The concentration of Zr on the film surface became rich with increasing of air-exposure/activation cycles. These results are caused by the formation of metal carbides on the film surface.
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BELLI, ELEONORA. "Coupling impedance and single beam collective effects for the future circular collider (lepton option)." Doctoral thesis, 2019. http://hdl.handle.net/11573/1238107.

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In the framework of the Future Circular Collider study, the high luminosity electron-positron collider FCC-ee will cover a beam energy range from 45.6 GeV to 182.5 GeV, thus allowing very precise measurements of all known heavy particles. The research activity presented in this Ph.D. thesis analyzes some important limitations for the operation of this machine, i.e. electron cloud (EC) and collective effects, particularly critical on the Z resonance due to the low energy and the high beam current. EC build up simulations have been performed for the main components of the machine, revealing the necessity of a NEG coating in the entire ring to lower the Secondary Electron Yield (SEY) of the surface. The presence of this coating affects the resistive wall (RW) impedance seen by the beam, representing the major source of wakefields in the machine due to its large circumference. The work presented in this thesis proves analytically and numerically that for the FCC-ee beam parameters on the Z resonance the contribution of the RW impedance can be reduced by decreasing the thickness of this layer. However, reducing the thickness of NEG coatings can affect the performance of the material itself and therefore the maximum SEY and related EC mitigation. For this reason, this thesis also includes an extensive set of measurements performed at CERN to characterize experimentally Ti-Zr-V thin films with thicknesses below 250 nm in terms of activation performance and SEY. An impedance model was also developed, through the characterization and optimization of the impedance of some important machine components. This model was crucial for a better understanding of single bunch and multi bunch instabilities, thus allowing to identify adequate mitigation techniques for ensuring beam stability during operation. This work also summarizes the impedance studies in the interaction region (IR) of FCC-ee.
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Book chapters on the topic "Non-evaporable getters"

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Walker, C. I., A. S. Kaye, R. A. Horn, and F. Mazza. "NON EVAPORABLE GETTER PUMPING FOR JET ICRF ANTENNAE." In Fusion Technology 1986, 815–20. Elsevier, 1986. http://dx.doi.org/10.1016/b978-1-4832-8376-0.50104-2.

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Xu, Y., J. Cui, H. Cui, H. Zhou, and J. Du. "Influence of the sputtering power supply and substrate outgassing on the sorption properties of Zr-Co-Ce Non-Evaporable Getter films." In Advances in Energy Equipment Science and Engineering, 2671–74. CRC Press, 2015. http://dx.doi.org/10.1201/b19126-517.

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Conference papers on the topic "Non-evaporable getters"

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Tanaka, Shuji, Yutaka Honjoya, and Masayoshi Esashi. "AUSN solder vacuum packaging using melted solder floodgates and laser-activated non-evaporable getters for SIC diaphragm anticorrosive vacuum sensors." In 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2010. http://dx.doi.org/10.1109/memsys.2010.5442459.

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Manini, Paolo, Donald G. Crabb, Yelena Prok, Matt Poelker, Simonetta Liuti, Donal B. Day, and Xiaochao Zheng. "Non Evaporable Getter (NEG) Pumps: a Route to UHV-XHV." In SPIN PHYSICS: 18th International Spin Physics Symposium. AIP, 2009. http://dx.doi.org/10.1063/1.3215608.

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Bansod, Tripti, B. K. Sindal, Kvanps Kumar, and S. K. Shukla. "Deposition of non evaporable getter films and their vacuum performance." In INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE AND TECHNOLOGY. AIP, 2012. http://dx.doi.org/10.1063/1.4732425.

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Mase, Kazuhiko, Masato Tanaka, Naoya Ida, Hiraku Kodama, and Takashi Kikuchi. "Development of low-cost, high-performance non-evaporable getter (NEG) pumps." In PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION – SRI2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4952838.

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Maccallini, Enrico, Fabrizio Siviero, Antonio Bonucci, Andrea Conte, Peeyush Srivastava, and Manini Paolo. "Non evaporable getter (NEG) technology: A powerful tool for UHV-XHV systems." In INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE AND TECHNOLOGY. AIP, 2012. http://dx.doi.org/10.1063/1.4732360.

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Manini, Paolo, Andrea Conte, Stefano Raimondi, and Antonio Bonucci. "Non Evaporable Getter (NEG) Coatings for Vacuum Systems in Synchrotron Radiation Facilities." In SYNCHROTRON RADIATION INSTRUMENTATION: Ninth International Conference on Synchrotron Radiation Instrumentation. AIP, 2007. http://dx.doi.org/10.1063/1.2436057.

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Conte, A., P. Manini, and S. Raimondi. "NEG (non evaporable getter) pumps for organic compounds and water removal in EUVL tools." In SPIE Advanced Lithography, edited by Frank M. Schellenberg. SPIE, 2008. http://dx.doi.org/10.1117/12.776061.

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Dylla, H. F., D. M. Manos, J. C. Citrolo, P. H. LaMarche, S. Raftopoulos, M. Ulrickson, A. G. Mathewson, A. Poncet, and F. Mazza. "Vacuum system design for a 1.2 GeV electron storage ring with non-evaporable getter pumping." In Vacuum design of synchrotron light sources. AIP, 1991. http://dx.doi.org/10.1063/1.41102.

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Pei, Binbin, Chaozhan Ye, Ke Sun, Peng Zhong, Tingling Yu, Heng Yang, and Xinxin Li. "A Novel Vacuum Packaging Process Using Sputtered Copper Layer as Non-Evaporable Getter Activated by Microwave." In 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2020. http://dx.doi.org/10.1109/mems46641.2020.9056432.

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Gupta, Nidhi, Jagannath, R. K. Sharma, S. C. Gadkari, K. P. Muthe, R. Mukundhan, and S. K. Gupta. "Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791277.

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Reports on the topic "Non-evaporable getters"

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Hsu, Irving, and Bernice E. Mills. Hydrogen capacity and absorption rate of the SAES St707 non-evaporable getter at various temperatures. Office of Scientific and Technical Information (OSTI), August 2010. http://dx.doi.org/10.2172/993616.

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