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Journal articles on the topic 'Non ideal devices'

Author: Grafiati

Published: 11 January 2025

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1

West, Brian R., and David V. Plant. "Optimization of non-ideal multimode interference devices." Optics Communications 279, no. 1 (2007): 72–78. http://dx.doi.org/10.1016/j.optcom.2007.06.056.

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2

Schroeder, D., and U. Witkowski. "Simulation of semiconductor devices with non-ideal metallic contacts." IEEE Transactions on Electron Devices 44, no. 4 (1997): 679–81. http://dx.doi.org/10.1109/16.563375.

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3

Natan, A., L. Kronik, H. Haick, and R. T. Tung. "Electrostatic Properties of Ideal and Non-ideal Polar Organic Monolayers: Implications for Electronic Devices." Advanced Materials 19, no. 23 (2007): 4103–17. http://dx.doi.org/10.1002/adma.200701681.

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4

Davey, K. "Optimization shows Halbach arrays to be non-ideal for induction devices." IEEE Transactions on Magnetics 36, no. 4 (2000): 1035–38. http://dx.doi.org/10.1109/20.877618.

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5

Lee, Jae-Eun, Chuljun Lee, Dong-Wook Kim, Daeseok Lee, and Young-Ho Seo. "An On-Chip Learning Method for Neuromorphic Systems Based on Non-Ideal Synapse Devices." Electronics 9, no. 11 (2020): 1946. http://dx.doi.org/10.3390/electronics9111946.

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In this paper, we propose an on-chip learning method that can overcome the poor characteristics of pre-developed practical synaptic devices, thereby increasing the accuracy of the neural network based on the neuromorphic system. The fabricated synaptic devices, based on Pr1−xCaxMnO3, LiCoO2, and TiOx, inherently suffer from undesirable characteristics, such as nonlinearity, discontinuities, and asymmetric conductance responses, which degrade the neuromorphic system performance. To address these limitations, we have proposed a conductance-based linear weighted quantization method, which control

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6

Nguyen, Quoc-Minh, Nan-Hui Chiang, Huu-Duy Tran, Hung-Yu Wang, and Li-Te Yin. "Symbolic nodal analysis of conveyor-based circuits considering non-ideal active devices." AEU - International Journal of Electronics and Communications 69, no. 11 (2015): 1635–40. http://dx.doi.org/10.1016/j.aeue.2015.07.014.

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7

Gubicza, Agnes, Miklós Csontos, András Halbritter, and György Mihály. "Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices." Nanoscale 7, no. 10 (2015): 4394–99. http://dx.doi.org/10.1039/c5nr00399g.

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8

English, Lisa B. "In Pursuit of an Ideal – A Perspective on Non-Invasive Continuous Glucose Monitoring." European Endocrinology 8, no. 1 (2010): 18. http://dx.doi.org/10.17925/ee.2012.08.01.18.

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Diabetes is one of the most common non-communicable diseases globally, and is the fourth or fifth leading cause of death in many countries. Medical technology for the management of diabetes has advanced steadily since the discovery of insulin in the early 20th century. Today, individuals with diabetes benefit from home-use blood glucose meters, continuous insulin pumps and, most recently, continuous glucose monitoring (CGM). Numerous studies have shown that frequent use of real-time CGM can improve glycaemic control with reduced risk of hypoglycaemia. However, current CGM devices have not been

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Alim, Mohammad A., Sanjida Khanam, and Martin A. Seitz. "Immittance Spectroscopy of Smart Components and Novel Devices." Active and Passive Electronic Components 16, no. 3-4 (1994): 153–70. http://dx.doi.org/10.1155/1994/25820.

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AC small-signal immittance spectroscopy is employed as a viable tool to demonstrate electrical characterization, performance improvement, and quality assurance issues of smart materials-based components and novel devices. The variation in the ac response, complemented via dc measurements within a range of tolerating temperature, delineates competing phenomena occurring in the microstructures of these engineering material systems. The results are presented in a generic manner with possible explanations on the mechanisms for two selected Debye-like (nearly ideal) and non-Debye (non-ideal) low-ca

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10

Halverson, Adam F., and Loucas Tsakalakos. "Junction Operation of GaAs Wire Array Solar Cells." MRS Proceedings 1493 (2013): 253–59. http://dx.doi.org/10.1557/opl.2013.403.

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ABSTRACTWire array solar cells benefit from enhanced coupling of light into the active area of the device, significantly decreased collection lengths due to radial charge separation and collection, and easier access to grain boundaries for passivation which may enable future deposition on non-wafer substrates. We report on an analysis of the junction operation of wire array based GaAs solar cells through temperature and light intensity dependent current-voltage analysis and compare these data to matched planar devices. We see evidence of non-ideal recombination pathways indicated by activation

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11

Huang, Yaren, Jonas Buettner, Benedikt Lechner, and Gerhard Wachutka. "The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes." Materials Science Forum 963 (July 2019): 553–57. http://dx.doi.org/10.4028/www.scientific.net/msf.963.553.

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The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with serious problems, such as a shifting threshold voltage, reduced forward conductivity, and no noticeable conductivity modulation by minority carrier injection from p+-emitters, in matching measured data with simulation results, as a consequence of the significant impact of non-ideal poor Ohmic contacts. In this work, we used a Schottky contact model togethe

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Lapin, Zachary J., Ryan Beams, Luiz Gustavo Cançado, and Lukas Novotny. "Near-field Raman spectroscopy of nanocarbon materials." Faraday Discussions 184 (2015): 193–206. http://dx.doi.org/10.1039/c5fd00050e.

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Nanocarbon materials, including sp<sup>2</sup> hybridized two-dimensional graphene and one-dimensional carbon nanotubes, and sp<sup>1</sup> hybridized one-dimensional carbyne, are being considered for the next generation of integrated optoelectronic devices. The strong electron–phonon coupling present in these nanocarbon materials makes Raman spectroscopy an ideal tool to study and characterize the material and device properties. Near-field Raman spectroscopy combines non-destructive chemical, electrical, and structural specificity with nanoscale spatial resolution, making it an ideal tool for

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13

Sun, Xiaoyu, and Shimeng Yu. "Impact of Non-Ideal Characteristics of Resistive Synaptic Devices on Implementing Convolutional Neural Networks." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 9, no. 3 (2019): 570–79. http://dx.doi.org/10.1109/jetcas.2019.2933148.

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14

Etezadi, Vahid, and Barry T. Katzen. "Endovascular Aortic Aneurysm Repair in ‘Non-ideal’ Patients – Techniques and Outcomes." Interventional Cardiology Review 5, no. 1 (2010): 90. http://dx.doi.org/10.15420/icr.2010.5.1.90.

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After almost 20 years of clinical experience, endovascular aortic aneurysm repair (EVAR) has become a well approved and established treatment with a rising prevalence and popularity among vascular specialists. Its initial favourable outcomes have been sufficiently maintained through long-term follow-ups in appropriately selected patients. Improvements to the EVAR technique with the introduction of newer-generation devices as well as enhancements in imaging systems and follow-up modalities have significantly expanded the scope of this treatment. However, there are still many patients with anato

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15

Kim, Hyojung, Hyesun Sung, Seungbo Shim, and Dooyoul Lee. "P‐97: Improved Electrical Performance and Realiability of a‐IGZO TFT by N2O Plasma Treatment Optimization." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 1762–65. http://dx.doi.org/10.1002/sdtp.17914.

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This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma treatment and proposes a solution according to the presence of N2O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N2O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N2O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N2O plasmaremoved during the post‐process exhibited non‐ideal

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16

Abuelma'atti, Muhammad Taher. "Novel Current-Mode Quotient Circuit." Active and Passive Electronic Components 17, no. 3 (1994): 151–55. http://dx.doi.org/10.1155/1994/76842.

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17

Luo, Bin, Prasanth Velvaluri, Yisi Liu, and Nian-Xiang Sun. "Magnetoelectric BAW and SAW Devices: A Review." Micromachines 15, no. 12 (2024): 1471. https://doi.org/10.3390/mi15121471.

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Magnetoelectric (ME) devices combining piezoelectric and magnetostrictive materials have emerged as powerful tools to miniaturize and enhance sensing and communication technologies. This paper examines recent developments in bulk acoustic wave (BAW) and surface acoustic wave (SAW) ME devices, which demonstrate unique capabilities in ultra-sensitive magnetic sensing, compact antennas, and quantum control applications. Leveraging the mechanical resonance of BAW and SAW modes, ME sensors achieve the femto- to pico-Tesla sensitivity ideal for biomedical applications, while ME antennas, operating a

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18

Payvand, Melika, Manu V. Nair, Lorenz K. Müller, and Giacomo Indiveri. "A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: from mitigation to exploitation." Faraday Discussions 213 (2019): 487–510. http://dx.doi.org/10.1039/c8fd00114f.

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In this paper, we present a spiking neural network architecture that supports the use of non-ideal memristive devices as synaptic elements and propose mixed-signal analog-digital interfacing circuits to mitigate/exploit such non-idealities for neuromorphic computation.

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19

Hampton, Naomi. "Intrauterine Progestogens." British Menopause Society Journal 4, no. 2 (1998): 56–61. http://dx.doi.org/10.1177/136218079800400207.

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An ideal contraceptive is one that that is highly effective, long acting, safe, easy to administer, not interfering with coitus and fully and immediately reversible. In addition, it should have non-contraceptive benefits. Progestogen-releasing intrauterine devices, especially one releasing levonorgestrel, fulfil many of these criteria. The contraceptive and non-contraceptive uses of the progesterone and the levonorgestrel releasing devices will be discussed in this review.

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20

Lederer, Maximilian, Tobias Vogel, Thomas Kämpfe, et al. "Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia." Journal of Applied Physics 132, no. 6 (2022): 064102. http://dx.doi.org/10.1063/5.0098953.

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The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia laye

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21

Sergeev, Andrei, Sunny Karnani, and C. Mike Waits. "Modeling TPV Devices Based on Exact Analytical Solution of the Generalized Shockley – Queisser Model." MRS Advances 4, no. 16 (2018): 905–11. http://dx.doi.org/10.1557/adv.2018.659.

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Exact solution of the generalized Shockley – Queisser model provides simple and effective tool for modeling of photovoltaic (PV) and thermophotovoltaic (TPV) devices with advanced photonic management. This formalism takes into account spectral characteristics of absorption/emission and a variety of recombination processes in semiconductor cell. In the current work we generalize this formalism to devices with non-ideal light reflectors used for light recycling and trapping. As an example, we investigate effects of the light management in InGaAsSb TPV converters (0.53 eV bandgap) with back surfa

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22

Lin-Shi, X., J.-M. Retif, B. Allard, and H. Morel. "Non-linear control design for a boost converter using bond graphs." Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering 216, no. 1 (2002): 1–11. http://dx.doi.org/10.1243/0959651021541363.

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The bond graph technique is applied to model a boost converter in order to derive an averaged model. The obtained averaged model is non-ideal as it takes into account most of the converter non-linearities introduced by power semiconductor devices. An ideal averaged model of the converter can be deduced easily for computing a non-linear control law in a real-time control context. The current-mode control of the boost converter is considered. The zero dynamics are studied by both classical theory and the bond graph approach. A modified version of a conventional nonlinear control law is proposed

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23

Kamar, Shazlin Shafiqah Shamsul, Syahrul Ashikin Azmi, and Zainuddin Mat Isa. "Performance Analysis of a Switched-Mode Flyback DC-DC Converter with Influence of Non-Ideal Switching Devices." IOP Conference Series: Earth and Environmental Science 1261, no. 1 (2023): 012039. http://dx.doi.org/10.1088/1755-1315/1261/1/012039.

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Abstract This paper approach for the performance analysis of a dc-dc flyback converter for low power application. Modelling is done with parasitic components for non-ideal flyback converter. Ac and dc input characteristic of the flyback converter are analysed and investigated by PSIM simulations and calculations. The influence of parasitic effects in converter components on input characteristic is studied in continuous conduction mode (CCM). The results of the calculation based on analytical formula and averaged models are in a good accordance with PSIM simulations and calculation. The goal of

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24

Ferraro, Elena, Marco Fanciulli, and Marco De Michielis. "Non-Ideal X-Gate and Z-Gate in Semiconducting Spin Qubit Implementations." Proceedings 12, no. 1 (2019): 53. http://dx.doi.org/10.3390/proceedings2019012053.

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Several spin qubit architectures have been proposed, theoretically investigated and realized at least on the scale of single devices in view of quantum computation and simulation applications. We focus our study on five qubit types: quantum dot spin qubit, double quantum dot singlet-triplet qubit, double quantum dot hybrid qubit, donor qubit, quantum dot spin-donor qubit and for each one we derived a compact effective Hamiltonian. Single qubit gate fidelities when time interval error is included are compared. A realistic set of values for the error parameters of amplitude controls linked to th

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25

Wei, Jie, Yan Lei, Huimin Jia, Jiamei Cheng, Hongwei Hou, and Zhi Zheng. "Controlled in situ fabrication of Ag2O/AgO thin films by a dry chemical route at room temperature for hybrid solar cells." Dalton Trans. 43, no. 29 (2014): 11333–38. http://dx.doi.org/10.1039/c4dt00827h.

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26

Tang, Jiaqi, Jinglun Yang, Hui Yang, et al. "Boronic ester-based dynamic covalent ionic liquid gels for self-healable, recyclable and malleable optical devices." Journal of Materials Chemistry C 6, no. 46 (2018): 12493–97. http://dx.doi.org/10.1039/c8tc03639j.

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27

Krause-Heuer, Anwen M., Maxine P. Grant, Nikita Orkey, and Janice R. Aldrich-Wright. "Drug Delivery Devices and Targeting Agents for Platinum(II) Anticancer Complexes." Australian Journal of Chemistry 61, no. 9 (2008): 675. http://dx.doi.org/10.1071/ch08157.

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An ideal platinum-based delivery device would be one that selectively targets cancerous cells, can be systemically delivered, and is non-toxic to normal cells. It would be beneficial to provide drug delivery devices for platinum-based anticancer agents that exhibit high drug transport capacity, good water solubility, stability during storage, reduced toxicity, and enhanced anticancer activity in vivo. However, the challenges for developing drug delivery devices include carrier stability in vivo, the method by which extracellular or intracellular drug release is achieved, overcoming the various

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28

Buhler, Rudolf T., Renato Giacomini, Marcelo Antonio Pavanello, and João Antonio Martino. "Fin Cross-Section Shape Influence on Short Channel Effects of MuGFETs." Journal of Integrated Circuits and Systems 7, no. 2 (2012): 137–44. http://dx.doi.org/10.29292/jics.v7i2.366.

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Multiple-gate FETs is normally constructed on pre-etched silicon fins. These devices often present casual width variations along the silicon height; mostly caused by technological limitations of the fin definition process, due to non-ideal anisotropic etch. The resulting devices have, consequently, non-rectangular cross-sections, which can affect their electrical behavior. This work addresses the dependence of fin width non-uniformity on the occurrence of short-channel effects through comparative analysis, based on threedimensional numeric simulation of non-rectangular cross-section devices. T

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29

Ghaffar, Muzzamil, Shakil R. Sheikh, Noman Naseer, Zia Mohy Ud Din, Hafiz Zia Ur Rehman, and Muhammad Naved. "Non-Intrusive Load Monitoring of Buildings Using Spectral Clustering." Sensors 22, no. 11 (2022): 4036. http://dx.doi.org/10.3390/s22114036.

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With widely deployed smart meters, non-intrusive energy measurements have become feasible, which may benefit people by furnishing a better understanding of appliance-level energy consumption. This work is a step forward in using graph signal processing for non-intrusive load monitoring (NILM) by proposing two novel techniques: the spectral cluster mean (SC-M) and spectral cluster eigenvector (SC-EV) methods. These methods use spectral clustering for extracting individual appliance energy usage from the aggregate energy profile of the building. After clustering the data, different strategies ar

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D.Tuschel, David. "Micro-Raman Spectroscopy for the Characterization of Materials in Electronic and Photonic Devices." Microscopy and Microanalysis 3, S2 (1997): 843–44. http://dx.doi.org/10.1017/s1431927600011107.

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Materials characterization is the primary application of macro- and micro-Raman spectroscopy in our laboratory. Specifically, we wish to correlate chemical bonding and short to long range translational symmetry (including amorphous, highly oriented, polycrystalline, and single crystal materials) to physical, optical and electronic properties of materials and devices. Raman spectroscopy is particularly useful in this capacity because of its origin in the vibrational motions of chemically bonded atoms and its dependence upon crystal symmetry through the polarization selection rules. Furthermore,

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31

Liu, Shun-Wei, Wei-Cheng Su, Chih-Chien Lee, Chi-Feng Lin, and Chih-Hsien Yuan. "Limited Injection at Electrode/Organic Interface Induced Non-Ideal Diode Behavior in Planar Heterojunction Organic Photovoltaic Devices." Journal of The Electrochemical Society 159, no. 11 (2012): H871—H875. http://dx.doi.org/10.1149/2.039211jes.

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32

Stefanovych, T. O., and S. V. Shcherbovskykh. "Account of the errors of switching device for a system with 2-out-of-3 redundancy." Information extraction and processing 2017, no. 45 (2017): 56–62. http://dx.doi.org/10.15407/vidbir2017.45.056.

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The mathematical reliability model is developed that takes into account the errors of the first and second type of switching device for a system with 2-out-of-3 redundancy. The proposed model is designed to determine the reliability characteristic. The system consists of three identical energy sources and two switching devices. It is assumed that the system is the non-renewable and the switching devices cannot return to their original state. A fault tree mathematically describes the reliability of the system in which the logical conditions for the mutual influence of the components of the syst

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Rashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes." Materials Science Forum 924 (June 2018): 302–5. http://dx.doi.org/10.4028/www.scientific.net/msf.924.302.

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In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simu

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Rashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes." Materials Science Forum 1004 (July 2020): 490–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.490.

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During the last decade, silicon carbide (SiC) and its heterostructures with other semiconductors have gained a significant importance for wide range of electronics applications. These structures are highly suitable for high frequency and high power applications in extremely high temperature environments. SiC exists in more than 200 different polycrystalline forms, called polytypes. Among these 200 types, the most prominent polytypes with exceptional physical and electrical attributes are 3C-SiC, 4H-SiC and 6H-SiC. Heterostructures of these SiC polytypes with other conventional semiconductors (

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35

Fafard, Simon, and Denis Masson. "Vertical Multi-Junction Laser Power Converters with 61% Efficiency at 30 W Output Power and with Tolerance to Beam Non-Uniformity, Partial Illumination, and Beam Displacement." Photonics 10, no. 8 (2023): 940. http://dx.doi.org/10.3390/photonics10080940.

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Stable and reliable optical power converting devices are obtained using vertical multi-junction laser power converters. They are based on the GaAs and the InP material systems and are used for power-over-fiber or power-beaming applications. This study demonstrates that, in addition to providing the overall best conversion efficiencies with output voltages ideal for various applications, these semiconductor photovoltaic devices are very tolerant to beam non-uniformity, partial illumination, or beam displacement variations. Examples are given with two tight beams, each covering as little as ~7%

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Sârbu, Annamaria, Marius Sârbu, and Cosmin Șumălan. "Non Wi-Fi Devices Interference Testing in a 2.4 GHz Wi-Fi Home." Land Forces Academy Review 23, no. 2 (2018): 143–50. http://dx.doi.org/10.2478/raft-2018-0017.

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Abstract Operating in probably the most crowded radio frequency bandwidth, the 2.4 GHz Wi-Fi is still common in the majority of living environments. Besides having to face problems regarding co-channel and adjacent channel influence, Wi-Fi often coexists with other radio technologies operating in this bandwidth which makes it ideal for interference testing. In this article authors propose the use of freely available mobile applications to measure Wi-Fi signal spreading within a residential home as well as to quantify Wi-Fi performance in the presence of some commonly available interferers. A c

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Vassalini, Irene, Ivano Alessandri, and Domenico de Ceglia. "Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications." Materials 14, no. 12 (2021): 3396. http://dx.doi.org/10.3390/ma14123396.

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Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to another one. This peculiarity makes PCMs ideal candidates for a number of applications including sensors, active displays, photonic volatile and non-volatile memories for information storage and computer science and optoelectronic devices. This review analyzes different examples of PCMs, in particular germanium–antimonium tellurides and vanadium di

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38

Lim, Sung Min. "Systematic Review Protocol for Sham Acupuncture Validation Research." Perspectives on Integrative Medicine 2, no. 2 (2023): 131–33. http://dx.doi.org/10.56986/pim.2023.06.008.

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Background: Streitberger and Park sham needles have been developed and used as non-penetrating sham acupuncture needles that can be blinded in randomized controlled clinical trials assessing the efficacy of acupuncture. Ideal sham acupuncture should not be distinguishable from an actual acupuncture treatment provided to the experimental group to ensure patient blinding; additionally, it should not have any physiological or biological effect. Providing evidence for such sophisticated sham acupuncture devices is critical, as control settings in clinical studies are based on research verifying th

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Reutov, Aleksei, Andrey Tayduganov, Vladimir Mayboroda, and Oleg Fat’yanov. "Security of the Decoy-State BB84 Protocol with Imperfect State Preparation." Entropy 25, no. 11 (2023): 1556. http://dx.doi.org/10.3390/e25111556.

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The quantum key distribution (QKD) allows two remote users to share a common information-theoretic secure secret key. In order to guarantee the security of a practical QKD implementation, the physical system has to be fully characterized and all deviations from the ideal protocol due to various imperfections of realistic devices have to be taken into account in the security proof. In this work, we study the security of the efficient decoy-state BB84 QKD protocol in the presence of the source flaws, caused by imperfect intensity and polarization modulation. We investigate the non-Poissonian pho

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Morgan, Adam, Ankan De, Haotao Ke, et al. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.

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The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencie

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Qiu, Qiu-Ling, Shi-Xu Yang, Qian-Shu Wu, et al. "Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction." Chinese Physics B 31, no. 4 (2022): 047103. http://dx.doi.org/10.1088/1674-1056/ac4746.

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The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-scree

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42

Falter, Maarten, Martijn Scherrenberg, and Paul Dendale. "Digital Health in Cardiac Rehabilitation and Secondary Prevention: A Search for the Ideal Tool." Sensors 21, no. 1 (2020): 12. http://dx.doi.org/10.3390/s21010012.

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Digital health is becoming more integrated in daily medical practice. In cardiology, patient care is already moving from the hospital to the patients’ homes, with large trials showing positive results in the field of telemonitoring via cardiac implantable electronic devices (CIEDs), monitoring of pulmonary artery pressure via implantable devices, telemonitoring via home-based non-invasive sensors, and screening for atrial fibrillation via smartphone and smartwatch technology. Cardiac rehabilitation and secondary prevention are modalities that could greatly benefit from digital health integrati

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Poole, Ruth Louise, Susan Myles, and Grace Carolan-Rees. "VP18 Potential Of Real World Evidence For ‘IDEAL’ Procedures Research." International Journal of Technology Assessment in Health Care 35, S1 (2019): 79–80. http://dx.doi.org/10.1017/s0266462319002940.

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IntroductionRandomized trials and similarly robust research methods generate evidence in carefully controlled settings, often with strict inclusion criteria. But patients in the ‘real world’ often have multiple comorbidities, and treatments are delivered within diverse environments. Trials are also difficult to fund, and rarely collect longitudinal data. Because of these, and other limitations, researchers are increasingly recognizing the inherent value of real world evidence (RWE). This is not only true for pharmaceutical products, and may have even more relevance in the evaluation of complex

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Coyle, Brian, Elham Kashefi, and Matty J. Hoban. "Certified Randomness From Steering Using Sequential Measurements." Cryptography 3, no. 4 (2019): 27. http://dx.doi.org/10.3390/cryptography3040027.

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The generation of certifiable randomness is one of the most promising applications of quantum technologies. Furthermore, the intrinsic non-locality of quantum correlations allow us to certify randomness in a device-independent way, i.e., we do not need to make assumptions about the devices used. Due to the work of Curchod et al. a single entangled two-qubit pure state can be used to produce arbitrary amounts of certified randomness. However, the obtaining of this randomness is experimentally challenging as it requires a large number of measurements, both projective and general. Motivated by th

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Giannazzo, Filippo, Patrick Fiorenza, E. Schiliro та ін. "Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-SiС on Silicon". Materials Science Forum 1062 (31 травня 2022): 400–405. http://dx.doi.org/10.4028/p-cl40be.

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This paper presents a macro-and nanoscale electrical investigation of Schottky and metal-oxide junctions with hetero-epitaxial 3C-SiC layers grown on Si. Statistical current-density-voltage (J-V) characterization of Pt/3C-SiC Schottky diodes showed an increase of the reverse leakage current with increasing the devices diameters. Furthermore, C-V and J-V analyses of SiO2/3C-SiC capacitors revealed non-idealities of the thermal oxide, such as a high trapped positive charge (3×1012 cm−2) and a reduced breakdown field (EBD=6.5 MV/cm) compared to ideal SiO2. Nanoscale electrical characterizations b

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Khandare, Jayant, Alain D'Souza, Smriti Arora, et al. "Extracorporeal microchannel device to capture and eliminate circulating tumor cells from cancer patient’s blood." Journal of Clinical Oncology 40, no. 16_suppl (2022): e14522-e14522. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.e14522.

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e14522 Background: Metastatic progression accounts for nearly 90% of cancer-related deaths and has been directly correlated with the presence of circulating tumor cells (CTCs) in numerous carcinomas including breast, lung, ovarian, colorectal, and head and neck cancers. The removal of CTCs from cancer patient’s blood is directly implicated with reduction of extravasation and disease invasiveness to secondary organs. Methods: We designed and printed 3 Dimensional (3D) microchannel devices using biocompatible polymer and packed it with anti-EpCAM (EpCAM) mediated glass-based (G) compositions (G-

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Khandare, Jayant, Alain D'Souza, Smriti Arora, et al. "Extracorporeal microchannel device to capture and eliminate circulating tumor cells from cancer patient’s blood." Journal of Clinical Oncology 40, no. 16_suppl (2022): e14522-e14522. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.e14522.

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e14522 Background: Metastatic progression accounts for nearly 90% of cancer-related deaths and has been directly correlated with the presence of circulating tumor cells (CTCs) in numerous carcinomas including breast, lung, ovarian, colorectal, and head and neck cancers. The removal of CTCs from cancer patient’s blood is directly implicated with reduction of extravasation and disease invasiveness to secondary organs. Methods: We designed and printed 3 Dimensional (3D) microchannel devices using biocompatible polymer and packed it with anti-EpCAM (EpCAM) mediated glass-based (G) compositions (G-

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Pancera, Elena, Jens Timmermann, Thomas Zwick, and Werner Wiesbeck. "Spectrum optimization in ultra-wideband systems." International Journal of Microwave and Wireless Technologies 2, no. 2 (2010): 203–9. http://dx.doi.org/10.1017/s1759078710000310.

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In this paper the non-ideal and frequency-dependent behavior of the hardware components of the ultra-wideband (UWB) transmitter RF-front end is analyzed. Both digital and analytical methods to compensate for this frequency-dependent behavior are investigated, in order to optimize the radiated wave, so that its spectrum perfectly matches the given mask. An example of spectral system optimization with analog devices is shown and verified through measurement results.

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Javid, Babayev, and Sadikhova Sayyara. "The Most Ideal L2 Teaching Method." International Journal of Religion 5, no. 7 (2024): 367–78. http://dx.doi.org/10.61707/nh76fk58.

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Though it is possible to see numerous researches on the so-called language teaching methods, there is still a pressing need to study them comparatively and from different angles. The article studies some specific methods with regard to covering language skills, mother tongue usage, usage of cutting-edge technological devices, comprehensibility gain. Besides, there is a strong focus on the conduction of the lesson regarding whether the lesson is student-centered, teacher-centered or self-centered. The aim of the article is to reveal the best language learning method combining the positive featu

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Kim, Jangsaeng, Dongseok Kwon, Sung Yun Woo, et al. "On-chip trainable hardware-based deep Q-networks approximating a backpropagation algorithm." Neural Computing and Applications 33, no. 15 (2021): 9391–402. http://dx.doi.org/10.1007/s00521-021-05699-z.

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AbstractReinforcement learning (RL) using deep Q-networks (DQNs) has shown performance beyond the human level in a number of complex problems. In addition, many studies have focused on bio-inspired hardware-based spiking neural networks (SNNs) given the capabilities of these technologies to realize both parallel operation and low power consumption. Here, we propose an on-chip training method for DQNs applicable to hardware-based SNNs. Because the conventional backpropagation (BP) algorithm is approximated, a performance evaluation based on two simple games shows that the proposed system achiev

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