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Journal articles on the topic 'Nondegenerate semiconductors'

Author: Grafiati

Published: 6 September 2023

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1

Sheik-Bahae, M., J. Wang, and E. W. Van Stryland. "Nondegenerate optical Kerr effect in semiconductors." IEEE Journal of Quantum Electronics 30, no. 2 (1994): 249–55. http://dx.doi.org/10.1109/3.283767.

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2

Min, H. S. "Steady‐state Nyquist theorem for nondegenerate semiconductors." Journal of Applied Physics 64, no. 11 (1988): 6339–44. http://dx.doi.org/10.1063/1.342096.

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3

Zhao, Peng, Matthew Reichert, David J. Hagan, and Eric W. Van Stryland. "Dispersion of nondegenerate nonlinear refraction in semiconductors." Optics Express 24, no. 22 (2016): 24907. http://dx.doi.org/10.1364/oe.24.024907.

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4

Ruvinskii, M. A., O. B. Kostyuk, and B. M. Ruvinskii. "The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire." Фізика і хімія твердого тіла 17, no. 1 (2016): 7–10. http://dx.doi.org/10.15330/pcss.17.1.7-10.

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It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.

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5

FUCHS, F., and F. POUPAUD. "ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 05, no. 08 (1995): 1093–111. http://dx.doi.org/10.1142/s0218202595000577.

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A current approximation for modeling electron transport in semiconductor devices is to assume small electron density. Through this method nondegenerate models are obtained. Here we present an asymptotical analysis of that approximation on the drift-diffusion equation. The numerical approximations of the degenerate and nondegenerate equations are then compared. A modified Scharfetter-Gummel scheme which integrates the degenerate drift-diffusion equation is proposed for comparison.

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6

JÜNGEL, ANSGAR. "ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 04, no. 05 (1994): 677–703. http://dx.doi.org/10.1142/s0218202594000388.

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We analyze the degenerate transient multi-dimensional quasi-hydrodynamic model for semiconductors with general recombination rate. We present existence results for general nonlinear diffusivities for the nondegenerate and the degenerate Dirichlet-Neumann mixed boundary value problem. Uniqueness of solutions of the nondegenerate system can be proved in the Dirichlet boundary case. Concerning the degenerate problem uniqueness can only be shown under some conditions on the initial and boundary data or on the electric field.

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7

Min, H. S. "A unified theory of noise in nondegenerate semiconductors." Journal of Applied Physics 61, no. 9 (1987): 4549–65. http://dx.doi.org/10.1063/1.338389.

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8

Combescot, Monique, and Roland Combescot. "Comment on ‘‘Electron-electron scattering in nondegenerate semiconductors’’." Physical Review Letters 59, no. 3 (1987): 375. http://dx.doi.org/10.1103/physrevlett.59.375.

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9

Hutchings, D. C., and E. W. Van Stryland. "Nondegenerate two-photon absorption in zinc blende semiconductors." Journal of the Optical Society of America B 9, no. 11 (1992): 2065. http://dx.doi.org/10.1364/josab.9.002065.

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10

Reggiani, Lino, Paolo Lugli, and A. P. Jauho. "Quantum kinetic equation for electronic transport in nondegenerate semiconductors." Physical Review B 36, no. 12 (1987): 6602–8. http://dx.doi.org/10.1103/physrevb.36.6602.

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11

Behura, Sanjay, and Vikas Berry. "Interfacial Nondegenerate Doping of MoS2and Other Two-Dimensional Semiconductors." ACS Nano 9, no. 3 (2015): 2227–30. http://dx.doi.org/10.1021/acsnano.5b01442.

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12

Paul, S. S., and D. P. Bhattacharya. "Harmonic generation in nondegenerate semiconductors at low lattice temperature." Journal of Applied Physics 64, no. 9 (1988): 4554–61. http://dx.doi.org/10.1063/1.341257.

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13

Paul, A. E., M. Lindberg, S. An, M. Sargent III, and S. W. Koch. "Quantum theory of nondegenerate four-wave mixing in semiconductors." Physical Review A 42, no. 3 (1990): 1725–36. http://dx.doi.org/10.1103/physreva.42.1725.

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14

Wu, Chhi-Chong, and Jensan Tsai. "Magnetoacoustic effect on linear conductivity tensors in nondegenerate semiconductors." Journal of Low Temperature Physics 61, no. 1-2 (1985): 55–67. http://dx.doi.org/10.1007/bf00682730.

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15

Cirloganu, Claudiu M., Lazaro A. Padilha, Dmitry A. Fishman, Scott Webster, David J. Hagan, and Eric W. Van Stryland. "Extremely nondegenerate two-photon absorption in direct-gap semiconductors [Invited]." Optics Express 19, no. 23 (2011): 22951. http://dx.doi.org/10.1364/oe.19.022951.

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16

Fishman, D. A., C. M. Cirloganu, S. Webster, L. A. Padilha, D. J. Hagan, and E. W. Van Stryland. "Extremely Nondegenerate Two-Photon Absorption and Subbandgap Detection in Semiconductors." Optics and Photonics News 22, no. 12 (2011): 25. http://dx.doi.org/10.1364/opn.22.12.000025.

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17

Cundiff, S. T., M. Koch, W. H. Knox, J. Shah, and W. Stolz. "Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions." Physical Review Letters 77, no. 6 (1996): 1107–10. http://dx.doi.org/10.1103/physrevlett.77.1107.

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18

Wu, Chhi-Chong, and Jensan Tsai. "Nonlinear response of electron-phonon interaction inn-type nondegenerate piezoelectric semiconductors." Journal of Low Temperature Physics 68, no. 5-6 (1987): 353–70. http://dx.doi.org/10.1007/bf00682302.

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19

Bauers, Sage R., Aaron Holder, Wenhao Sun, et al. "Ternary nitride semiconductors in the rocksalt crystal structure." Proceedings of the National Academy of Sciences 116, no. 30 (2019): 14829–34. http://dx.doi.org/10.1073/pnas.1904926116.

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Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1−xN (TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range o

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20

Furuta, Mamoru, and Yusaku Magari. "(Invited, Digital Presentation) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1266. http://dx.doi.org/10.1149/ma2022-02351266mtgabs.

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Transparent metal oxide semiconductors (OSs) have been extensively investigated for use as the active channel layer of thin film transistors (TFTs) for next-generation flat-panel displays, nonvolatile memories, image sensors, and pH sensors, to name a few. Among OSs, the amorphous In–Ga–Zn–O (IGZO) has attracted particular attention for TFT applications owing to its high field effect mobility (μFE) of more than 10 cm2V−1s−1, steep subthreshold swing (S.S.), extremely low off-state current, large-area uniformity, and good bias stress stability. Although the μFE of an IGZO TFT is approximately o

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21

Betz, M., G. Göger, A. Leitenstorfer, et al. "Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing." Physical Review B 60, no. 16 (1999): R11265—R11268. http://dx.doi.org/10.1103/physrevb.60.r11265.

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22

Vinke, E. �. "Influence of interelectron interaction on the forbidden bandwidth of nondegenerate narrowband semiconductors." Soviet Physics Journal 30, no. 6 (1987): 539–43. http://dx.doi.org/10.1007/bf00897343.

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23

Chang, K. M. "Activity Coefficients of Electrons and Holes in Semiconductors with Nonuniform Composition: I . Nondegenerate." Journal of The Electrochemical Society 135, no. 11 (1988): 2859–62. http://dx.doi.org/10.1149/1.2095447.

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24

Reggiani, Lino, Paolo Lugli, and Vladimir Mitin. "Generalization of Nyquist-Einstein relationship to conditions far from equilibrium in nondegenerate semiconductors." Physical Review Letters 60, no. 8 (1988): 736–39. http://dx.doi.org/10.1103/physrevlett.60.736.

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25

Hung, Nguyen T., Ahmad R. T. Nugraha, and Riichiro Saito. "Size effect in thermoelectric power factor of nondegenerate and degenerate low-dimensional semiconductors." Materials Today: Proceedings 4, no. 12 (2017): 12368–73. http://dx.doi.org/10.1016/j.matpr.2017.10.005.

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26

OCKMAN, NATHAN, WUBAO WANG, and R. R. ALFANO. "APPLICATIONS OF ULTRAFAST LASER SPECTROSCOPY TO THE STUDY OF SEMICONDUCTOR PHYSICS." International Journal of Modern Physics B 05, no. 20 (1991): 3165–234. http://dx.doi.org/10.1142/s0217979291001255.

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This article reviews the application of some of the principal methods of picosecond and femtosecond laser spectroscopy to the investigation of the dynamics of carriers, phonons and surface structure in semiconductors. The measurement of the temporal evolution of photoinduced luminescence, absorption, reflection and scattering in semiconductors makes it possible to obtain the lifetimes of photogenerated electrons, holes, excitons and phonons in both the bulk and quantum wells and superlattice structures. The information produced by these studies is necessary for the basic understanding of the u

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27

BERTONCINI, RITA. "NONEQUILIBRIUM GREEN’S FUNCTIONS FOR HIGH-FIELD QUANTUM TRANSPORT THEORY." International Journal of Modern Physics B 06, no. 22 (1992): 3441–81. http://dx.doi.org/10.1142/s0217979292001584.

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A formulation of the Kadanoff-Baym-Keldysh theory of nonequilibrium quantum statistical mechanics is developed in order to describe nonperturbatively the effects of the electric field on electron-phonon scattering in nondegenerate semiconductors. We derive an analytic, gauge-invariant model for the spectral density of energy states that accounts for both intracollisional field effect and collisional broadening simultaneously. A kinetic equation for the quantum distribution function is derived and solved numerically. The nonlinear drift velocity versus applied field characteristics is also eval

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28

Wu, Chhi‐Chong, and Chau‐Jy Lin. "Free‐carrier absorption of nondegenerate semiconductors in quantizing magnetic fields: Nonpolar optical phonon scattering." Journal of Applied Physics 73, no. 12 (1993): 8319–23. http://dx.doi.org/10.1063/1.353423.

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29

Wingreen, Ned S., Christopher J. Stanton, and John W. Wilkins. "Electron-Electron Scattering in Nondegenerate Semiconductors: Driving the Anisotropic Distribution toward a Displaced Maxwellian." Physical Review Letters 57, no. 8 (1986): 1084–87. http://dx.doi.org/10.1103/physrevlett.57.1084.

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30

Sato, Hisanao, and Yoshikazu Hori. "Theoretical analysis of plasmon, polar phonon, and hot-electron energy relaxation in nondegenerate semiconductors." Physical Review B 36, no. 11 (1987): 6033–39. http://dx.doi.org/10.1103/physrevb.36.6033.

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31

Golinelli, Paola, Luca Varani, and Lino Reggiani. "Generalization of Thermal Conductivity and Lorenz Number to Hot-Carrier Conditions in Nondegenerate Semiconductors." Physical Review Letters 77, no. 6 (1996): 1115–18. http://dx.doi.org/10.1103/physrevlett.77.1115.

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32

Loginov, D. K., and A. D. Chegodaev. "Magnetic-field-induced nonparabolicity of exciton dispersion in semiconductors with a nondegenerate valence band." Journal of Experimental and Theoretical Physics 113, no. 3 (2011): 502–9. http://dx.doi.org/10.1134/s1063776111070065.

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33

González, T. "Shot-noise suppression in nondegenerate semiconductors: the role of an energy-dependent scattering time." Physica B: Condensed Matter 272, no. 1-4 (1999): 282–84. http://dx.doi.org/10.1016/s0921-4526(99)00287-2.

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34

Wu, Chhi-Chong, Chau-Jy Lin, and Jensan Tsai. "Scattering mechanisms of the Hall effect and transverse magnetoresistance in nondegenerate piezo-electric semiconductors." Semiconductor Science and Technology 3, no. 2 (1988): 90–100. http://dx.doi.org/10.1088/0268-1242/3/2/004.

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35

Moh, K. G., H. S. Min, and Y. J. Park. "Equivalent noise source for Boltzmann transport equation with relaxation‐time approximation in nondegenerate semiconductors." Journal of Applied Physics 74, no. 10 (1993): 6217–21. http://dx.doi.org/10.1063/1.355194.

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36

Kousik, G. S., C. M. van Vliet, G. Bosman, and Horng-Jye Luo. "Quantum 1/f Noise Associated with Intervalley Scattering in Nondegenerate Semiconductors. I. Analytical Calculations." physica status solidi (b) 154, no. 2 (1989): 713–26. http://dx.doi.org/10.1002/pssb.2221540230.

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37

Poklonski, N. A., S. A. Vyrko, V. I. Yatskevich, and A. A. Kocherzhenko. "A semiclassical approach to Coulomb scattering of conduction electrons on ionized impurities in nondegenerate semiconductors." Journal of Applied Physics 93, no. 12 (2003): 9749–52. http://dx.doi.org/10.1063/1.1573735.

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38

Min, H. S., and Doyeol Ahn. "Langevin noise sources for the Boltzmann transport equations with the relaxation‐time approximation in nondegenerate semiconductors." Journal of Applied Physics 58, no. 6 (1985): 2262–65. http://dx.doi.org/10.1063/1.335943.

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39

Loginov, D. K., and A. D. Chegodaev. "Erratum to: “Magnetic-field-induced nonparabolicity of exciton dispersion in semiconductors with a nondegenerate valence band”." Journal of Experimental and Theoretical Physics 120, no. 2 (2015): 333–34. http://dx.doi.org/10.1134/s106377611502020x.

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40

Pereyra, P. "Spin Polarization Oscillations and Coherence Time in the Random Interaction Approach." Advances in Condensed Matter Physics 2019 (June 2, 2019): 1–10. http://dx.doi.org/10.1155/2019/2030573.

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We study the time evolution of the survival probability and the spin polarization of a dissipative nondegenerate two-level system in the presence of a magnetic field in the Faraday configuration. We apply the Extended Gaussian Orthogonal Ensemble approach to model the stochastic system-environment interaction and calculate the survival and spin polarization to first and second order of the interaction picture. We present also the time evolution of the thermal average of these quantities as functions of the temperature, the magnetic field, and the energy-levels density, for ρ(ϵ)∝ϵs, in the subo

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41

Ye, Fan, Rui-Tuo Hong, Yi-Bin Qiu, et al. "Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells." Nanomaterials 13, no. 1 (2022): 178. http://dx.doi.org/10.3390/nano13010178.

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ZnSnN2 has potential applications in photocatalysis and photovoltaics. However, the difficulty in preparing nondegenerate ZnSnN2 hinders its device application. Here, the preparation of low-electron-density nanocrystalline ZnSnN2 and its device application are demonstrated. Nanocrystalline ZnSnN2 was prepared with reactive sputtering. Nanocrystalline ZnSnN2 with an electron density of approximately 1017 cm−3 can be obtained after annealing at 300 °C. Nanocrystalline ZnSnN2 is found to form Schottky contact with Ag. Both the current I vs. voltage V curves and the capacitance C vs. voltage V cur

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42

YOUNGDALE, E. R., J. R. MEYER, C. A. HOFFMAN, F. J. BARTOLI, and W. I. WANG. "TYPE-II SUPERLATTICES AND VARIABLE OVERLAP SUPERLATTICES IN TOTAL INTERNAL REFLECTION SWITCHES FOR THE LONGWAVE INFRARED." Journal of Nonlinear Optical Physics & Materials 02, no. 03 (1993): 415–36. http://dx.doi.org/10.1142/s0218199193000255.

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We derive explicit criteria for the properties required of a semiconductor nonlinear medium suitable for use in all-optical switching devices employing total internal reflection. Transmission as a function of laser intensity and film thickness has been calculated using a realistic model for penetration of the evanescent beam under TIR conditions. Requirements based on these results include a large nonlinear refractive index, large index change at saturation and small absorption coefficient. We show that unlike previously-studied semimetals and narrow-gap semiconductors, Type-II superlattices s

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43

Lei, X. L., and N. J. M. Horing. "Balance-Equation Approach to Hot-Carrier Transport in Semiconductors." International Journal of Modern Physics B 06, no. 07 (1992): 805–936. http://dx.doi.org/10.1142/s0217979292000505.

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The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (1984), is addressed in this comprehensive review. A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport theory. This physical feature is embodied in the initial density matrix chosen to represent the unperturbed carrier system. Force and energy balance equations are formulated for the dc steady state, ac dynamic and transient cases of charge conduc

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44

Babaev, M. M., T. M. Gassym, M. Tas, and M. Tomak. "Thermomagnetic effects of nondegenerate Kane semiconductors under the conditions of mutual electron–phonon drag in high electric and arbitrary magnetic fields." Journal of Physics: Condensed Matter 17, no. 21 (2005): 3255–67. http://dx.doi.org/10.1088/0953-8984/17/21/019.

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45

Poklonski, N. A., A. I. Kovalev, N. I. Gorbachuk та S. V. Shpakovski. "CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION". Devices and Methods of Measurements 9, № 2 (2018): 130–41. http://dx.doi.org/10.21122/2220-9506-2018-9-2-130-141.

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The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junction of which a δ-layer of point triple-charged t-defects is formed. Such a diode is called p–t–n-diode, similarly to p–i–n-diode.Each t-defect can be in one of the three charge states (−1, 0, and +1; in the units of the elementary charge). It is assumed that at room temperature all hydrogen-like ac

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46

GUREVICH, YU G., G. N. LOGVINOV, O. YU TITOV, and J. GIRALDO. "NEW PHYSICAL PRINCIPLES OF CONTACT THERMOELECTRIC COOLING." Surface Review and Letters 09, no. 05n06 (2002): 1703–8. http://dx.doi.org/10.1142/s0218625x02004256.

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We suggest a new approach to theory of contact thermoelectric cooling (Peltier effect). The metal–metal, metal–n-type semiconductor, metal–p-type semiconductor, p–n junction contacts are analyzed. Both degenerate and nondegenerate electron and hole gases are considered. The role of recombination in the contact cooling effect is discussed for the first time.

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47

Wei, Tian-Ran, Chao-Feng Wu, Wei Sun, Yu Pan, and Jing-Feng Li. "Is Cu3SbSe3 a promising thermoelectric material?" RSC Advances 5, no. 53 (2015): 42848–54. http://dx.doi.org/10.1039/c5ra03953c.

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Cu<sub>3</sub>SbSe<sub>3</sub> characterized by ultralow thermal conductivity is a wide-gap, nondegenerate semiconductor with a large effective mass and deformation potential, yielding zT<sub>max</sub> = 0.25.

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48

Mandal, Pravat Kr. "A Note on Nonlinear Parametric Interaction of Acoustic Waves in Magnetised Nondegenerate Piezoelectric Semiconductor — A Numerical Approach." International Journal of Applied Physics and Mathematics 4, no. 6 (2014): 379–85. http://dx.doi.org/10.17706/ijapm.2014.4.6.379-385.

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49

DING, YUJIE J., and JACOB B. KHURGIN. "MIRRORLESS OPTICAL PARAMETRIC OSCILLATORS." Journal of Nonlinear Optical Physics & Materials 05, no. 02 (1996): 223–46. http://dx.doi.org/10.1142/s0218863596000179.

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We have considered two novel configurations for optical parametric oscillators (OPO’s): transversely-pumped counter-propagating and nondegenerate backward OPO’s due to the distributed feedback provided through the opposite propagation directions of the signal and idler. In both configurations, by changing the incident angle of the pump beam, one can tune the output frequency in a large range. The threshold pump powers for the oscillation can be as low as ~10 W for the transversely-pumped counter-propagating OPO’s and 44 W for the nondegenerate backward OPO’s. The quasi-phase matching is achiev

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50

Tsuchiya, M., J. Shah, T. C. Damen, and J. E. Cunningham. "Nondegenerate four-wave mixing in a semiconductor microcavity." Applied Physics Letters 71, no. 18 (1997): 2650–52. http://dx.doi.org/10.1063/1.120168.

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