Log in

Relevant bibliographies by topics / Nonpolar III-Nitrides

Contents

Journal articles
Dissertations / Theses
Book chapters

Academic literature on the topic 'Nonpolar III-Nitrides'

Author: Grafiati

Published: 6 September 2023

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Nonpolar III-Nitrides.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Nonpolar III-Nitrides"

1

Mudiyanselage, Dinusha Herath, Dawei Wang, Yuji Zhao, and Houqiang Fu. "Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications." Journal of Applied Physics 131, no. 21 (2022): 210901. http://dx.doi.org/10.1063/5.0088021.

Full text

Abstract:

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band

APA, Harvard, Vancouver, ISO, and other styles

2

Feezell, Daniel, Yagya Sharma, and Sanjay Krishna. "Optical properties of nonpolar III-nitrides for intersubband photodetectors." Journal of Applied Physics 113, no. 13 (2013): 133103. http://dx.doi.org/10.1063/1.4798353.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Lyakhova, N. O. "Modeling the influence of template dimensions on dislocations nanostructures during selective epitaxy of III-nitrides." Electronics and Communications 16, no. 3 (2011): 39–43. http://dx.doi.org/10.20535/2312-1807.2011.16.3.264219.

Full text

Abstract:

A simplified model of the process is considered nucleation of defects for optimization of template layers of nanostructures with three-dimensional restrictions When using optimized porous anode template layers aluminum oxide formed on Si (100) substrate, a nitride layer was grown by the chloride-hydride gas-phase epitaxy method gallium, which turned out to be nonpolar with (11 2 0) α- orientation and low anisotropy. Spectra micro cathodoluminescence of the grown films confirms the low density of packing defects

APA, Harvard, Vancouver, ISO, and other styles

4

Das, Aparna. "A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations -=SUP=-*-=/SUP=-." Оптика и спектроскопия 130, no. 3 (2022): 376. http://dx.doi.org/10.21883/os.2022.03.52165.1549-21.

Full text

Abstract:

Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN) are crucial elements for solid-state lighting and visible light communication applications. The most widely used growth plane for group III-nitride LEDs is the polar plane (c-plane), which is characterized by the presence of a polarization-induced internal electric field in heterostructures. It is possible to address long-standing problems in group III-nitride LEDs, by using semipolar and nonpolar orientations of GaN. In addition to the reduction in the polarization-induced internal electric field, semip

APA, Harvard, Vancouver, ISO, and other styles

5

Piner, Edwin L., and Mark W. Holtz. "(Invited) Heterogeneous Integration of Ultrawide Bandgap III-Nitrides and Diamond." ECS Meeting Abstracts MA2023-02, no. 32 (2023): 1580. http://dx.doi.org/10.1149/ma2023-02321580mtgabs.

Full text

Abstract:

Industry demands for power switching, amplification and photonic applications are continually pushing the limits of semiconductor device technologies leading to increasing applied voltages and, thus, higher electric fields while simultaneously requiring reduction in the size, weight and power consumption. In addition, recent heightened interest in higher temperature (and other extreme environment) applications, while simultaneously maintaining high-voltage and high-power performance, has inexorably led to ultrawide bandgap (UWBG) semiconductor materials. This interest in UWBG materials stems f

APA, Harvard, Vancouver, ISO, and other styles

6

Mi, Zetian. "(Invited) Artificial Photosynthesis on III-Nitride Nanowire Arrays." ECS Meeting Abstracts MA2018-01, no. 31 (2018): 1850. http://dx.doi.org/10.1149/ma2018-01/31/1850.

Full text

Abstract:

High efficiency artificial photosynthesis, that can convert solar energy directly into chemical fuels, has been extensively investigated. To date, however, success in finding abundant visible-light active photocatalyst has been very limited. Recently, metal-nitrides (e.g. InGaN) have attracted considerable attention for applications in artificial photosynthesis, due to their excellent stability and tunable energy bandgap across nearly the entire solar spectrum. Moreover, InGaN is the only known material whose energy bandgap can straddle the redox potential of water under deep visible and near-

APA, Harvard, Vancouver, ISO, and other styles

7

Monavarian, Morteza, Arman Rashidi, and Daniel Feezell. "A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges." physica status solidi (a), December 27, 2018, 1800628. http://dx.doi.org/10.1002/pssa.201800628.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Nonpolar III-Nitrides"

1

Mukundan, Shruti. "Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy." Thesis, 2015. http://etd.iisc.ac.in/handle/2005/3930.

Full text

Abstract:

The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating property of GaN is the band gap tuning from 0.7 to 6.2 eV by alloying with Al or In. The most common orientation to grow optoelectronic devices out of these materials are the polar c-plane which are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields. Devices grown in no polar orientation such as (1 0 –1 0) m-plane or (1 1 –2 0) a-plane have no

APA, Harvard, Vancouver, ISO, and other styles

2

Mukundan, Shruti. "Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy." Thesis, 2015. http://etd.iisc.ernet.in/2005/3930.

Full text

Abstract:

The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating property of GaN is the band gap tuning from 0.7 to 6.2 eV by alloying with Al or In. The most common orientation to grow optoelectronic devices out of these materials are the polar c-plane which are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields. Devices grown in no polar orientation such as (1 0 –1 0) m-plane or (1 1 –2 0) a-plane have no

APA, Harvard, Vancouver, ISO, and other styles

3

Pant, Rohit Kumar. "Nonpolar III-Nitrides Optoelectronic Devices by Plasma-Assisted Molecular Beam Epitaxy." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4894.

Full text

Abstract:

III-Nitrides are excellent semiconductors very much suitable for modern electronic and optoelectronic applications specifically in the fields of solid-state lighting, solar cells, high power/frequency electronics and photodetectors. Most of the devices of these wurtzite crystals are grown along [0002] polar direction, which are strongly affected by spontaneous and piezoelectric polarizations at the interfaces. This not only decreases the efficiency of recombination but also changes the metal-semiconductor junction properties, thus adversely affecting the photodetection properties. On the other

APA, Harvard, Vancouver, ISO, and other styles

4

Guo, Song-sain, and 郭淞賢. "Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/q7pj68.

Full text

Abstract:

碩士<br>國立中山大學<br>物理學系研究所<br>105<br>In this research, we grow m-plane gallium nitride on m-plane sapphire substrate using plasma-assisted molecular beam epitaxy (PAMBE)system with different plasma power and growth temperature. Then, we grow m-GaN doped Mn on the m-plane gallium nitride. A challenging issue in the growth of diluted magnetic semiconductors (DMSs)is secondary phase, and we suppress secondary phase controlling cell shutter to doped with Mn. GaN films are observed with their formation of surface and thickness. The crystal orientation and rocking curve are detected using high resol

APA, Harvard, Vancouver, ISO, and other styles

5

Mounir, Christian. "Optical polarization and charge carrier density in semipolar and nonpolar InGaN quantum wells in core-shell microrods and planar LEDs." 2020. https://monarch.qucosa.de/id/qucosa%3A74325.

Full text

Abstract:

InGaN-based light emitters are strongly affected by the inhomogeneous broadening induced by random alloy fluctuations. While these effects have been extensively investigated on c-plane (e.g. localization of carriers at low carrier density due to potential fluctuations, delocalization at higher carrier density), much fewer work report on the impact of inhomogeneous broadening on the emission properties of semipolar and nonpolar InGaN quantum wells (QWs). In addition to have a higher electron- and hole-wavefunction overlap and thereby an increased radiative recombination rate thanks to the redu

APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Nonpolar III-Nitrides"

1

As, Donat J., and Klaus Lischka. "Nonpolar cubic III-nitrides." In Molecular Beam Epitaxy. Elsevier, 2013. http://dx.doi.org/10.1016/b978-0-12-387839-7.00011-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

As, Donat J., and Klaus Lischka. "Nonpolar Cubic III-nitrides." In Molecular Beam Epitaxy. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-812136-8.00006-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!