Relevant bibliographies by topics / NPT-IGBT

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'NPT-IGBT'

Author: Grafiati
Published: 3 June 2025
Last updated: 1 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'NPT-IGBT.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "NPT-IGBT"

1

Kang, Ey-Goo, Byoung-Sub Ahn, and Tae-Jin Nam. "Study on Design of 2500 V NPT IGBT." Journal of the Korean Institute of Electrical and Electronic Material Engineers 23, no. 4 (2010): 273–79. http://dx.doi.org/10.4313/jkem.2010.23.4.273.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Kang, Ey Goo. "The Optimal Design of Super High Voltage Planar Gate NPT IGBT." Journal of the Korean Institute of Electrical and Electronic Material Engineers 28, no. 8 (2015): 490–95. http://dx.doi.org/10.4313/jkem.2015.28.8.490.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Takahashi, Y., K. Yoshikawa, M. Soutome, T. Fujii, H. Kirihata, and Y. Seki. "2.5 kV-1000 A power pack IGBT (high power flat-packaged NPT type RC-IGBT)." IEEE Transactions on Electron Devices 46, no. 1 (1999): 245–50. http://dx.doi.org/10.1109/16.737465.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Gao, Ming Chao, Jun Liu, Ge Zhao, et al. "The Research on Static Characteristics of 1700V/100A Planner NPT-IGBT." Applied Mechanics and Materials 433-435 (October 2013): 1572–77. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.1572.

Full text
Abstract:
A 1700V/100A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose or the drive-in time of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 2100V, the saturation v
APA, Harvard, Vancouver, ISO, and other styles
5

Bonnet, G., P. Austin, and J. L. Sanchez. "New distributed model of NPT IGBT dedicated to power circuits design." Microelectronics Reliability 44, no. 1 (2004): 79–88. http://dx.doi.org/10.1016/s0026-2714(03)00186-0.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Liu, Jun, Hai Long Bao, Jiang Liu, et al. "The Research on Static Characteristics of 3300V/50A Planner NPT-IGBT." Applied Mechanics and Materials 568-570 (June 2014): 1201–6. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1201.

Full text
Abstract:
A 3300V/50A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 4300V, the saturation voltage is between 3.4V
APA, Harvard, Vancouver, ISO, and other styles
7

Blaabjerg, F., U. Jaeger, and S. Munk-Nielsen. "Power losses in PWM-VSI inverter using NPT or PT IGBT devices." IEEE Transactions on Power Electronics 10, no. 3 (1995): 358–67. http://dx.doi.org/10.1109/63.388002.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Tamaki, Tomohiro, Ginger G. Walden, Yang Sui, and James A. Cooper. "On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs." Materials Science Forum 600-603 (September 2008): 1143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1143.

Full text
Abstract:
We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.
APA, Harvard, Vancouver, ISO, and other styles
9

ZHANG, FEI, SHUHUA LUO, LIANG ZHANG, et al. "A NOVEL PT AND NPT MIXED IGBT HAVING A NEW n-BUFFER LAYER." Modern Physics Letters B 21, no. 01 (2007): 1–8. http://dx.doi.org/10.1142/s0217984907011895.

Full text
Abstract:
For the first time, a novel mixed insulated gate bipolar transistor (MIGBT) is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing the n+/n- structure, so that the trade-off relation between the conduction and switching losses is greatly improved and efficiently decoupled. Furthermore, the proposed device exhibits larger forward blocking voltage and positive temperature coefficient of the forward voltage drop, facilita
APA, Harvard, Vancouver, ISO, and other styles
10

Eckel, H. G., and L. Sack. "Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive." EPE Journal 6, no. 3-4 (1996): 20–26. http://dx.doi.org/10.1080/09398368.1996.11463392.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "NPT-IGBT"

1

Sheng, Kuang. "Design, modelling and application of the IGBT." Thesis, Heriot-Watt University, 1999. http://hdl.handle.net/10399/1203.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "NPT-IGBT"

1

Hadini, Yassine, Abdelghafour Galadi, and Adil Echchelh. "An Accurate NPT-IGBT SPICE Model with Simple Parameter Extraction Method." In Lecture Notes in Electrical Engineering. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_33.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "NPT-IGBT"

1

Calmon, F. "Thermal behaviour of PT and NPT IGBT." In Proceedings of 5th International Conference on Power Electronics and Variable-Speed Drives. IEE, 1994. http://dx.doi.org/10.1049/cp:19940935.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Eckel, Hans-Guenter, and Karl Fleisch. "Turn-off behaviour of high voltage NPT- and FS-IGBT." In 2008 13th International Power Electronics and Motion Control Conference (EPE/PEMC 2008). IEEE, 2008. http://dx.doi.org/10.1109/epepemc.2008.4635243.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

He, Weiwei, Patrick R. Palmer, Xueqiang Zhang, Zhihan Wang, and Mark Snook. "Soft Turn-On of NPT IGBT under Active Voltage Control." In 2011 Asia-Pacific Power and Energy Engineering Conference (APPEEC). IEEE, 2011. http://dx.doi.org/10.1109/appeec.2011.5747735.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Xiao, Di, Ibrahim Abuishmais, and Tore Undeland. "Switching characteristics of NPT-IGBT power module at different temperatures." In 2010 14th International Power Electronics and Motion Control Conference (EPE/PEMC 2010). IEEE, 2010. http://dx.doi.org/10.1109/epepemc.2010.5606877.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Jiang, Lingfeng, You Zhou, Dan Zhang, Shan He, Xiaochao Li, and Donghui Guo. "Side-poly technique for enhanced breakdown voltage of Trench-NPT-IGBT." In 2013 International Conference on Anti-Counterfeiting, Security and Identification (ASID). IEEE, 2013. http://dx.doi.org/10.1109/icasid.2013.6825292.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Ding, Yifei, Xin Yang, Jun Wang, Chunming Tu, and Guoyou Liu. "Investigation on Parameter Extraction for An Improved Fourier-Series-Based NPT IGBT Model." In 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2021. http://dx.doi.org/10.1109/wipdaasia51810.2021.9656041.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Kyu Hyun Lee, Kwang-Hoon Oh, Young-Chul Kim, and Chong Man Yun. "An avalanche rugged NPT trench IGBT used in single-ended quasi resonant topology for induction heating appliance." In 2005 IEEE 11th European Conference on Power Electronics and Applications. IEEE, 2005. http://dx.doi.org/10.1109/epe.2005.219739.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Sugiyama, Ueda, and Ishiko. "A new collector structure for thin wafer NPT-IGBT with low dose p- Si injection layer and high dose p+ Ge contact layer." In IC's. IEEE, 2004. http://dx.doi.org/10.1109/wct.2004.240352.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'NPT-IGBT' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography