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Journal articles on the topic 'NPT-IGBT'

Author: Grafiati
Published: 3 June 2025
Last updated: 1 August 2025

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1

Kang, Ey-Goo, Byoung-Sub Ahn, and Tae-Jin Nam. "Study on Design of 2500 V NPT IGBT." Journal of the Korean Institute of Electrical and Electronic Material Engineers 23, no. 4 (2010): 273–79. http://dx.doi.org/10.4313/jkem.2010.23.4.273.

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2

Kang, Ey Goo. "The Optimal Design of Super High Voltage Planar Gate NPT IGBT." Journal of the Korean Institute of Electrical and Electronic Material Engineers 28, no. 8 (2015): 490–95. http://dx.doi.org/10.4313/jkem.2015.28.8.490.

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3

Takahashi, Y., K. Yoshikawa, M. Soutome, T. Fujii, H. Kirihata, and Y. Seki. "2.5 kV-1000 A power pack IGBT (high power flat-packaged NPT type RC-IGBT)." IEEE Transactions on Electron Devices 46, no. 1 (1999): 245–50. http://dx.doi.org/10.1109/16.737465.

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4

Gao, Ming Chao, Jun Liu, Ge Zhao, et al. "The Research on Static Characteristics of 1700V/100A Planner NPT-IGBT." Applied Mechanics and Materials 433-435 (October 2013): 1572–77. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.1572.

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A 1700V/100A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose or the drive-in time of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 2100V, the saturation v
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5

Bonnet, G., P. Austin, and J. L. Sanchez. "New distributed model of NPT IGBT dedicated to power circuits design." Microelectronics Reliability 44, no. 1 (2004): 79–88. http://dx.doi.org/10.1016/s0026-2714(03)00186-0.

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6

Liu, Jun, Hai Long Bao, Jiang Liu, et al. "The Research on Static Characteristics of 3300V/50A Planner NPT-IGBT." Applied Mechanics and Materials 568-570 (June 2014): 1201–6. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1201.

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A 3300V/50A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 4300V, the saturation voltage is between 3.4V
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7

Blaabjerg, F., U. Jaeger, and S. Munk-Nielsen. "Power losses in PWM-VSI inverter using NPT or PT IGBT devices." IEEE Transactions on Power Electronics 10, no. 3 (1995): 358–67. http://dx.doi.org/10.1109/63.388002.

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8

Tamaki, Tomohiro, Ginger G. Walden, Yang Sui, and James A. Cooper. "On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs." Materials Science Forum 600-603 (September 2008): 1143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1143.

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We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.
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9

ZHANG, FEI, SHUHUA LUO, LIANG ZHANG, et al. "A NOVEL PT AND NPT MIXED IGBT HAVING A NEW n-BUFFER LAYER." Modern Physics Letters B 21, no. 01 (2007): 1–8. http://dx.doi.org/10.1142/s0217984907011895.

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For the first time, a novel mixed insulated gate bipolar transistor (MIGBT) is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing the n+/n- structure, so that the trade-off relation between the conduction and switching losses is greatly improved and efficiently decoupled. Furthermore, the proposed device exhibits larger forward blocking voltage and positive temperature coefficient of the forward voltage drop, facilita
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10

Eckel, H. G., and L. Sack. "Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive." EPE Journal 6, no. 3-4 (1996): 20–26. http://dx.doi.org/10.1080/09398368.1996.11463392.

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11

Cortés, I., X. Perpiñà, J. Urresti, X. Jordà, and J. Rebollo. "Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling." Microelectronics Reliability 52, no. 9-10 (2012): 2471–76. http://dx.doi.org/10.1016/j.microrel.2012.06.074.

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12

Feiler, W., W. Gerlach, and U. Wiese. "On the turn-off behaviour of the NPT-IGBT under clamped inductive loads." Solid-State Electronics 39, no. 1 (1996): 59–67. http://dx.doi.org/10.1016/0038-1101(95)00118-d.

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13

Lee, Jong-Seok, Ey-Goo Kang, and Man-Young Sung. "Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode." Journal of the Korean Institute of Electrical and Electronic Material Engineers 19, no. 10 (2006): 912–17. http://dx.doi.org/10.4313/jkem.2006.19.10.912.

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14

Lee, Jong-Seok, Sin-Su Kyoung, Ey-Goo Kang, and Man-Young Sung. "A Study on the 1,700 V Rated NPT Trench IGBT Analysis by PIN Diode - PNP Transistor Model." Journal of the Korean Institute of Electrical and Electronic Material Engineers 21, no. 10 (2008): 889–95. http://dx.doi.org/10.4313/jkem.2008.21.10.889.

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15

Kang, Ey Goo. "The Electrical Characteristics of High Voltage Non Punch Through (NPT) and Field Stop IGBT for Nano Convergence Power Devices." Transactions on Electrical and Electronic Materials 19, no. 4 (2018): 241–44. http://dx.doi.org/10.1007/s42341-018-0048-2.

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16

Batunlu, Canras, and Alhussein Albarbar. "Towards More Reliable Renewable Power Systems - Thermal Performance Evaluation of DC/DC Boost Converters Switching Devices." International Journal of Power Electronics and Drive Systems (IJPEDS) 6, no. 4 (2015): 876. http://dx.doi.org/10.11591/ijpeds.v6.i4.pp876-887.

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<span style="font-family: "Times New Roman",serif; font-size: 10pt; mso-fareast-language: EN-US; mso-fareast-font-family: Calibri; mso-fareast-theme-font: minor-latin; mso-ansi-language: EN-GB; mso-bidi-language: AR-SA;">Power electronic converters (PECs) are one of the most important elements within renewable power generation systems. The reliability of switching elements of PECs is still below expectations and is a major contributor to the downtime of renewable power generation systems. Conventional technology based elements such as Silicon Insulated Gate Bipolar Tran
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17

Bong Kim, Hak, and Hyon Chol Kang. "Analysis on effect of hot-carrier-induced degradation of NPT-IGBT." Solid-State Electronics, August 2024, 109002. http://dx.doi.org/10.1016/j.sse.2024.109002.

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18

Hani, Baek, Min Sun Gwang, Shin Chansun, and Ho Ahn Sung. "Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation." International Journal of Electrical, Electronic and Communication Sciences 11.0, no. 6 (2018). https://doi.org/10.5281/zenodo.1317304.

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Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the
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19

baek, Hani, Byung Gun Park, Chaeho Shin, and Gwang Min Sun. "Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation." Nuclear Engineering and Technology, May 2023. http://dx.doi.org/10.1016/j.net.2023.05.034.

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20

Dongye, Zhonghao, Jiayu Fan, Yu Xiao, Tianchen Li, Lei Qi, and Dongsheng Yang. "An Analytical Formula for the PETT Oscillation Over a Wide Voltage Range in NPT Planar IGBT Chips." IEEE Transactions on Power Electronics, 2024, 1–10. http://dx.doi.org/10.1109/tpel.2024.3467159.

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