Academic literature on the topic 'OBIRCh'

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Journal articles on the topic "OBIRCh"

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Lian, Jian Wen, Xiao Ling Lin, and Ruo He Yao. "Application of PEM and OBIRCH to Defect Localization of Integrated Circuits." Advanced Materials Research 904 (March 2014): 277–81. http://dx.doi.org/10.4028/www.scientific.net/amr.904.277.

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With the increasing integration and complexity of microelectronic devices, fault isolation has been challenged. Photon Emission Microscopy (PEM) and Optical Beam Induced Resistance Change (OBIRCH) are effective tools for defect localization and fault characterization in failure analysis. In this paper, the principles and different application condition of PEM and OBIRCH are discussed. PEM is very helpful for locating defects emitting photon, but can not detect the defects which have no photon emitting, such as shorted metal interconnects; OBIRCH as a complementary, has a high success rate for
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Liao, J. Y., H. L. Marks, and F. Beaudoin. "OBIRCH analysis of electrically stressed advanced graphic ICs." Microelectronics Reliability 47, no. 9-11 (2007): 1565–68. http://dx.doi.org/10.1016/j.microrel.2007.07.047.

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Zhang, Hanmin, Ming Hu, Fei Zong, et al. "Wafer damage issue study by heavy Al wire wedge bonding." Microelectronics International 31, no. 2 (2014): 129–36. http://dx.doi.org/10.1108/mi-10-2013-0048.

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Purpose – The purpose of this paper was to attempt to confirm the root cause of wafer damage issue by heavy Al wire wedge bonding and propose some permanent solutions for it. Design/methodology/approach – The infra red–optical beam-induced resistance change (IR-OBIRCH) analysis defines the position of an abnormal hotspot. A cross section and an scanning electron microscope (SEM) confirmed the wafer damage issue and its position. Based on the position of wafer damage, the wedge tool with different life and Al buildup was checked found to be on the wedge tool. Finite element analysis (FEA) model
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Brahma, Sanjib Kumar, Christian Boit, and Arkadiusz Glowacki. "Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout." Microelectronics Reliability 45, no. 9-11 (2005): 1487–92. http://dx.doi.org/10.1016/j.microrel.2005.07.041.

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Yang, Han, Rui Chen, Jianwei Han, Yanan Liang, Yingqi Ma, and Hao Wu. "Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits." Applied Sciences 10, no. 23 (2020): 8576. http://dx.doi.org/10.3390/app10238576.

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Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the temperature variation in Integrated Circuits (IC) after laser irradiation, which qua
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Naoe, Takuya, Taketoshi Mizobe, and Kohichi Yokoyama. "Case studies of defect localization based on software-based fault diagnosis in comparison with PEMS/OBIRCH analysis." Microelectronics Reliability 54, no. 6-7 (2014): 1433–42. http://dx.doi.org/10.1016/j.microrel.2014.03.002.

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Nikawa, K., T. Saiki, S. Inoue, and M. Ohtsu. "Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects." Microelectronics Reliability 38, no. 6-8 (1998): 883–88. http://dx.doi.org/10.1016/s0026-2714(98)00100-0.

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Liu, Xiangyu, Maozhen Li, Yang Liu, and Man Qi. "OBIRE." International Journal of Distributed Systems and Technologies 1, no. 4 (2010): 58–73. http://dx.doi.org/10.4018/jdst.2010100105.

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It has been widely recognized that bibliographic information plays an increasingly important role for scientific research. Peer-to-peer (P2P) networks provide an effective environment for people belonging to a community to share various resources on the Internet. This paper presents OBIRE, an ontology based P2P network for bibliographic information retrieval. For a user query, OBIRE computes the degree of matches to indicate the similarity of a published record to the query. When searching for information, users can incorporate their domain knowledge into their queries which guides OBIRE to di
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Driscoll, T., M. Cole, V. Rowe, and M. J. Wilson. "OBIEC." IEEE Industry Applications Magazine 12, no. 1 (2006): 20–26. http://dx.doi.org/10.1109/mia.2006.1578561.

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NICOLAU, Dragoş. "Demitizarea interfeţelor în Programarea Orientată Obiect." Revista Română de Informatică și Automatică 30, no. 4 (2020): 73–84. http://dx.doi.org/10.33436/v30i4y202006.

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Dissertations / Theses on the topic "OBIRCh"

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Machouat, Aziz. "Développement et application d’une méthode d’analyse de défaillances fonctionnelles et contribution à l’amélioration de l’utilisation des techniques optiques statiques et dynamiques." Thesis, Bordeaux 1, 2008. http://www.theses.fr/2008BOR13709/document.

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Avec l’évolution des technologies vers la haute intégration, il devient de plus en plus difficile de localiser les défaillances fonctionnelles situées dans la partie logique des circuits intégrés. En effet, la résolution spatiale fournie par les techniques actuelles n'est pas suffisante. Pour répondre à cette problématique, cette thèse propose une nouvelle approche qui combine le diagnostic ATPG et les techniques optiques. Cette méthode a fait ses preuves sur de nombreux cas d'analyses pour l'amélioration des rendements de production. La méthode utilisant les techniques optiques statiques et d
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Miyachi, Christine (Christine Mary) 1962. "Enhancing the software improvement processes through obiect-process methodology." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/91732.

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Cvrková, Jana. "Stanovení lipidů a zastoupení mastných kyselin v obilce ječmene." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2010. http://www.nusl.cz/ntk/nusl-216627.

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The diploma thesis deals with the determination of lipids and fatty acid profile in a barley caryopsis.(Hordeum vulgare). The theoretical part describes the synthesis of fatty acids and their degradation in plant material, secondly, it described the possibilities of lipid extraction and their determination and the possibilities of determination of fatty acids. In the experimental part method of lipid extraction on automated extractor Fex ®IKA and determination of fatty acids by GC-FID were optimized. For analysis of fatty acids two capillary columns SLB-IL 100 and Supelcowax were compared. Twe
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SILVA, CAROLINE FERNANDA SANTOS DA. "OBIRIN DUDU: UN OVERVIEW UPON THE IDENTITY AND CITIZENSHIP OF BLACK WOMEN." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2009. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=14617@1.

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COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR<br>O presente trabalho tem como objeto de estudo o papel desempenhado pelas religiões de matriz africana na construção da identidade racial de mulheres negras. Ele tem como locus de análise a Comunidade Terreiro Ilè Ase Iyemonja Omi Olodo, localizada em Porto Alegre, Rio Grande do Sul. Os conceitos território e territorialidade são discutidos e apropriados, dada a sua importância para a construção da identidade negra. Os movimentos de resistência negra no Brasil são aqui tratados no marco da globalização. Nosso objetivo é o de contri
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Wang, Hung-Chih. "Situation et ambiguïté de l'objet : la mise en ordre comme phénomène." Thesis, Paris 1, 2015. http://www.theses.fr/2015PA010513/document.

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Cette recherche est une exploration, par la pratique, de la notion d'ordre dans le rapport à l'objet. Comment organisons-nous la perception de quelque chose pour le comprendre? Le statut des objets change en fonction de leur contexte mais aussi du regard que l'on porte sur eux. Mais comme leur sens premier leur reste toujours plus ou moins attaché ils en prirent une certaine ambiguïté, non seulement quant à leur identité mais aussi quant à leur statut. Où les classer? A quelle place, ordre mais aussi hiérarchie les ranger dans notre organisation du monde ? Cette recherche à la fois artistique
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Isoird, Karine Locatelli Marie-Laure. "Etude de la tenue en tension des dispositifs de puissance en carbure de silicium par caractérisations OBIC et électriques." Villeurbanne : Doc'INSA, 2003. http://csidoc.insa-lyon.fr/these/2001/isoird/index.html.

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Isoird, Karine. "Etude de la tenue en tension des dispositifs de puissance en carbure de silicium par caractérisations OBIC et électriques." Lyon, INSA, 2001. http://theses.insa-lyon.fr/publication/2001ISAL0018/these.pdf.

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Cette étude en vue de l’augmentation de la tenue en tension des composants de puissance en carbure de silicium a porté à la fois sur la détermination de certains paramètres physiques du matériau (coefficients d’ionisation des électrons et des trous) et sur l’analyse du comportement sous polarisation inverse de diodes bipolaires. Les caractérisations électriques ont été complétées par des mesures OBIC (Optical Beam Induced Current). Le début de ces travaux de thèse a été consacré à la mise en place du banc de mesures expérimental OBIC en tenant compte des spécificités du matériau. L’étude bibli
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Nguyen, Duy Minh. "Conception et caractérisation de diodes en SiC pour la détermination des coefficients d'ionisation." Phd thesis, INSA de Lyon, 2011. http://tel.archives-ouvertes.fr/tel-00679281.

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Le carbure de silicium (SiC) possède plusieurs propriétés exceptionnelles comme une large bande interdite, un champ électrique critique et une vitesse de saturation des porteurs élevée pour remplacer le silicium (Si) dans des domaines de fonctionnement jusque-là inaccessibles avec le Si. Un nombre important de démonstrateurs des composants de puissance en SiC faisant état de performances remarquables ainsi que la disponibilité commerciale des composants en SiC confirment la maturité de la filière SiC et montrent les progrès technologiques réalisés au cours des dernières années. Cependant, il e
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Anderberg, Elin. "LED Array Frequency Dependent Photocurrent Imaging of Organic Solar Cell Modules." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-138683.

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To mitigate the risk for devastating climate changes, there is an urgent need to change the energy production from the current fossil based to renewable sources. Solar cells will contribute to an increasing share of the future energy systems. Today silicon solar cells dominate the market but printed organic solar cells are promising alternatives in terms of cost, flexibility, possibilities for building integrations and energy payback times. Printing enables roll-to-roll processing that is quick and renders huge volumes. Thus, also characterization and quality control must be fast. Recent tests
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Essely, Fabien. "Développement de méthodologies d'analyse des défaillances causées par les ESD dans les circuits intégrés VLSI à l'aide de la technique OBIC impulsionnelle et contribution à l'évaluation de la criticité des défauts latents." Bordeaux 1, 2006. http://www.theses.fr/2006BOR13249.

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Ce travail se situe dans le contexte de l'analyse de défaillance ainsi que des décharges électrostatiques. Des cas d'analyse de défaillance de dommages engendrés par des décharges électrostatiques nous ont permis le développement de méthodologies d'analyse ainsi que d'améliorer la mise en oeuvre de la technique OBIC impuslionnelle. La compréhension des mécanismes mis en jeu dans cette technique est facilitée par des simulations numériques. Ces dernières pourront désormais prendre en compte des différents phénomènes physiques intervenants dans la modélisation du coefficient d'absorption. Une mé
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Books on the topic "OBIRCh"

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Evtimov, Evtim. Iskam obich za obich. Izd-vo Zakhariĭ Stoi︠a︡nov, 2006.

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Evtimov, Evtim. Obich za obich: Izbrana lirika. IK "Evrika AVI", 1994.

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Evtimov, Evtim. Iskam obich za obich: Izbrana lirika. Izd. "Zakahriĭ Stoi︠a︡nov", 2006.

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Boi͡adzhieva, Li͡ubka. Obich za obich: Khudozhestveno-dokumentalni razkazi. Izdatelska kŭshta "Trakii͡a pres", 1993.

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Ivanov, Vŭlo. Moi͡a︡ta obich. [s.n.], 1992.

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Angelova, Lilii︠a︡. Obich: Izbrano. Izd-vo Zakhariĭ Stoi︠a︡nov, 2005.

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Penchev, Georgi. Obich i trevoga. Nar. mladezh, 1986.

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Kirov, Georgi. Ozareni ot obich. [s.n.], 1993.

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T͡Sachev, Kliment Penev. Li͡ubov bez obich. Profizdat, 1988.

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Karasimeonov, Aleksandŭr. Obich ; Ednodnevni t͡s︡vetove. Bŭlgarski pisatel, 1990.

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Book chapters on the topic "OBIRCh"

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Bauch, Jürgen, and Rüdiger Rosenkranz. "OBIRCH - Optical Beam Induced Resistivity Change." In Physikalische Werkstoffdiagnostik. Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53952-1_18.

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Lühmann-Frester, Helga E. "„Obidah“ - eine frühe Erzählung von Katharina II." In Mittel-, Nord- und Osteuropa. Böhlau Verlag, 2002. http://dx.doi.org/10.7788/boehlau.9783412328658.721.

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Grünberg-Dröge, Monika. "Scève, Maurice: Délie, obiect de plus haulte vertu." In Kindlers Literatur Lexikon (KLL). J.B. Metzler, 2020. http://dx.doi.org/10.1007/978-3-476-05728-0_17878-1.

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Tao, Y., and W. I. Grosky. "Image Matching Using the OBIR System with Feature Point Histograms." In Visual Database Systems 4 (VDB4). Springer US, 1998. http://dx.doi.org/10.1007/978-0-387-35372-2_16.

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Raynaud, Christophe, Daniel Loup, Phillippe Godignon, Raul Perez Rodriguez, Dominique Tournier, and Dominique Planson. "OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.1007.

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Takeshita, Tatsuya. "Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication." In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4337-7_3.

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Nikawa, Kiyoshi, and Shoji Inoue. "Detection and characterization of failures and defects in LSI chips by optical beam induced resistance changes (OBIRCH)." In Defect Recognition and Image Processing in Semiconductors 1997. Routledge, 2017. http://dx.doi.org/10.1201/9781315140810-7.

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Pintzuk, Susan. "Verb–Obiect Order In Old English: Variation as Grammatical Competition." In Syntactic Effects of Morphological Change. Oxford University Press, 2002. http://dx.doi.org/10.1093/acprof:oso/9780199250691.003.0016.

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Conference papers on the topic "OBIRCh"

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Johnson, Gregory M., Lloyd Smith, Ziyan Xu, and Tomonori Nakamura. "Multiphoton OBIC for Device Characterization and Defect Localization." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0533.

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Abstract Applications of MpOBIC (Multi-photon Optical Beam Induced Current) are discussed for use in defect localization. The MpOBIC signals in a ring oscillator under static conditions are examined and demonstrate the superior optical resolution of the system over traditional OBIRCH. A 5-fin diode test structure is examined under passive conditions, demonstrating that true multi-photon OBIC has occurred from the backside. The same diode is examined in forward bias, and the resulting discussion concludes that both OBIC and OBIRCH signals are present in the sample. Thus, we claim that both OBIC
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Nikawa, K., T. Saiki, S. Inoue, and M. Ohtsu. "High Spatial Resolution OBIRCH and OBIC Effects Realized by Near-field Optical Probe in the Analysis of High Resistance 200 nm wide TiSi Line." In ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0025.

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Abstract The identification of voids and Si nodules in the Al stripes of integrated-circuit-device chips is a key part of failure analysis and process monitoring in the semiconductor industry. The optical-beam-induced resistance-change-detection (OBIRCH) method has been shown to be more useful in void detection than other methods. In this study, the wavelength of the laser used for heating the Al stripes on the Si chips has been changed from 633 to 1300 nm and the OBIRCH method has been modified to use a near-field (NF) optical probe as the heat source instead of a laser beam. Results showed t
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Nikawa, K., та S. Inoue. "Various Contrasts Identifiable From the Backside of a Chip by 1.3μm Laser Beam Scanning and Current Change Imaging". У ISTFA 1996. ASM International, 1996. http://dx.doi.org/10.31399/asm.cp.istfa1996p0387.

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Abstract We can identify various contrasts by scanning an 1.3 um laser beam from the backside of a chip and displaying current changes as brightness changes on a CRT, because the 1.3 um laser beam generates no OBIC signal and can penetrate P- Si substrate with little intensity degradation. The contrasts we have confirmed up to now are: (1) Current pass contrast at Al lines caused by OBIRCH, (2) Defect contrast at Al interconnects caused by OBIRCH, (3) Current pass contrast at a poly Si lines caused by OBIRCH, (4) Parasitic MIM (metal-insulator-metal) contrast caused by temperature dependence o
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Xuanlong Chen, Qingsa Li, Liyuan Liu, and Bing Liu. "OBIRCH analysis of electrostatic discharge ICs." In 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2015. http://dx.doi.org/10.1109/ipfa.2015.7224395.

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Huang, Yan. "Failure analysis technology based on OBIRCH." In 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202935.

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Howard, Clifford, Anusha Weerakoon, Diana M. Mitro, and Dawn Glaeser. "Topside Defect Localization Using OBIRCH Analysis." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0095.

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Abstract OBIRCH analysis is a useful technique for defect localization not only for parametric failures, but also for functional analysis. However, OBIRCH results do not always identify the exact defect location. OBIRCH analysis results must be used in conjunction with other analysis tools and techniques to successfully identify defect locations.
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Morag, Michael, and Neel Leslie. "Improving Amplifier for OBIRCH/TIVA Application." In ISTFA 2020. ASM International, 2020. http://dx.doi.org/10.31399/asm.cp.istfa2020p0330.

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Abstract OBIRCh(Optical Beam Induced Resistance Change) and TIVA (Thermal Induced Voltage Alteration) are widely used ElectricalFailure Analysis techniques for finding defects under static conditions. This paper will discuss the requirements for a good amplifier to be used for OBIRCh, and recent improvements that have been released to market from Thermo Fisher Scientific.
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Kolasa, Ted. "A Simple Adapter for Soft Defect Localization Using OBIRCH." In ISTFA 2007. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.istfa2007p0191.

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Abstract Equipment manufacturers have developed peripherals for their tools that add soft defect localization (SDL) capability to existing optical beam tools, in many cases providing excellent results. However, these upgrades add significant cost to the tool. This paper presents the design considerations for a simple adapter that was developed in house to add SDL capability to optical beam induced resistance change (OBIRCH) tool, including resolution of some unexpected problems. This solution represents a simple, low cost method to add SDL testing capability to the OBIRCH tool and can also be
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Jinrong, Song, Fan Diwei, Wang Winter, Wen Gaojie, Tian Li, and Qi Changyan. "Open/resistive defect localization using OBIRCH technique." In 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2016. http://dx.doi.org/10.1109/ipfa.2016.7564278.

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Lin, Xiaoling, and Hongqi Zhang. "OBIRCH based on differential imaging locating method." In 2014 International Conference on Reliability, Maintainability and Safety (ICRMS). IEEE, 2014. http://dx.doi.org/10.1109/icrms.2014.7107185.

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