Relevant bibliographies by topics / Ohmic resistance

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Ohmic resistance'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 June 2024

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Journal articles on the topic "Ohmic resistance"

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Lira Garcia Barros, Rodrigo, Matheus Theodorus de Groot, and John van der Schaaf. "(Digital Presentation) Solving the Mystery of Ohmic Resistance in Zero-Gap Alkaline Water Electrolyzers Using Electrochemical Impedance Spectroscopy and Polarization Curves." ECS Meeting Abstracts MA2022-02, no. 39 (2022): 1443. http://dx.doi.org/10.1149/ma2022-02391443mtgabs.

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Hydrogen can be produced using renewable energy sources through alkaline water electrolysis (AWE). Alkaline water electrolyzers are made of inexpensive materials such as nickel perforated electrodes and the Zirfon porous diaphragm. However, one of the bottlenecks of this technology is the high internal ohmic resistance compared to other technologies, which implies that the technology is traditionally operated at low current densities. To decrease the ohmic resistance advanced AWE electrolyzers use a zero-gap configuration. However, even with such a zero-gap configuration the ohmic resistance r
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Khan, Prof Saniya. "A Research on Modeling of High Impedance Fault Detection for Protection of Dc Distribution System." International Journal for Research in Applied Science and Engineering Technology 11, no. 3 (2023): 269–73. http://dx.doi.org/10.22214/ijraset.2023.49372.

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Abstract: High ohmic resistance faults area unit troublesome to find by standard overcurrent relays principally thanks to their low current magnitudes. This paper describes a model for representing high ohmic resistance faults in electrical distribution systems. The model is predicated in a very non-linear resistance representing the high ohmic resistance path throughout this sort of faults. Supported this model, the performance of many electrical variables associated to high ohmic resistance faults is analyzed and an algorithmic rule for top ohmic resistance fault detection in electrical dist
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Yoo, Hyun Sik, Yonas Megra, Ji Won Suk, and Wonyoung Lee. "Interface Resistance Analysis in Solid Oxide Fuel Cells." ECS Meeting Abstracts MA2023-01, no. 54 (2023): 245. http://dx.doi.org/10.1149/ma2023-0154245mtgabs.

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A sophisticated design of the interface structure between the cathode and the electrolyte is essential to improve the performance of solid oxide fuel cells (SOFCs). It is because the interface is the place where it directly affects both the ohmic resistance and the polarization resistance as interface contact and interface reaction, respectively. To improve interface properties, electrolyte surface treatment or inserting interface functional layer between the cathode and the electrolyte have been applied. They improved cell performance by effectively enhancing the interfacial characteristics s
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Niaz, Atif Khan, Woong Lee, SeungCheol Yang, and Hyung-Tae Lim. "Tracing Resistances of Anion Exchange Membrane Water Electrolyzer during Long-term Stability Tests." Journal of Electrochemical Science and Technology 12, no. 3 (2021): 358–64. http://dx.doi.org/10.33961/jecst.2021.00094.

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In this study, an anion exchange membrane water electrolysis (AEMWE) cell was operated for ~1000 h at a voltage bias of 1.95 V. Impedance spectra were regularly measured every ~ 100 h, and changes in the ohmic and non-ohmic resistance were traced as a function of time. While there was relatively little change in the I–V curves and the total cell resistance during the long-term test, we observed various electrochemical phenomena in the cell: 1) initial activation with a decrease in both ohmic and non-ohmic resistance; 2) momentary and non-permanent bubble resistance (non-ohmic resistance) depen
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Raka, Yash Dharmendra, Robert Bock, Håvard Karoliussen, Øivind Wilhelmsen, and Odne Stokke Burheim. "The Influence of Concentration and Temperature on the Membrane Resistance of Ion Exchange Membranes and the Levelised Cost of Hydrogen from Reverse Electrodialysis with Ammonium Bicarbonate." Membranes 11, no. 2 (2021): 135. http://dx.doi.org/10.3390/membranes11020135.

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The ohmic resistances of the anion and cation ion-exchange membranes (IEMs) that constitute a reverse electrodialysis system (RED) are of crucial importance for its performance. In this work, we study the influence of concentration (0.1 M, 0.5 M, 1 M and 2 M) of ammonium bicarbonate solutions on the ohmic resistances of ten commercial IEMs. We also studied the ohmic resistance at elevated temperature 313 K. Measurements have been performed with a direct two-electrode electrochemical impedance spectroscopy (EIS) method. As the ohmic resistance of the IEMs depends linearly on the membrane thickn
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Repetto, Laura, Gerry Agnew, Adriana Del Borghi, Fabio Di Benedetto, and Paola Costamagna. "Detailed Simulation of the Ohmic Resistance of Solid Oxide Fuel Cells." Journal of Fuel Cell Science and Technology 4, no. 4 (2006): 413–17. http://dx.doi.org/10.1115/1.2756847.

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A theoretical evaluation of the ohmic resistance of solid oxide fuel cells (SOFCs) is very important because internal ohmic resistances account for a large part of the losses occurring in SOFCs and significantly affect cell performance. However, in the majority of cases, a detailed evaluation of ohmic losses is not an elementary task, since the structure of the geometry makes it difficult to apply simple laws, such as R=ρl∕S. The solution of a PDE equation is required, which has to be performed numerically. In this paper, two different numerical approaches have been applied to the simulation o
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Yue, Yunrui, Song Li, Xinbing Cheng, et al. "Effects of temperature on the ohmic internal resistance and energy loss of Lithium-ion batteries under millisecond pulse discharge." Journal of Physics: Conference Series 2301, no. 1 (2022): 012014. http://dx.doi.org/10.1088/1742-6596/2301/1/012014.

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Abstract Battery energy storage technology has a promising future in the field of compact high-power pulse drivers due to its high energy storage density. In this paper, three types of high-performance lithium batteries, such as lithium titanate (LTO) battery, lithium iron phosphate (LFP) battery, and Ni,Co,Al (NCR) ternary lithium-ion battery, have been studied in different ambient temperatures by using DC internal resistance measurement method. The result shows that the ohmic internal resistance of lithium batteries increases when the temperature drops. When the temperature is above -30 °C,
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Kuchuk, Andrian V., V. P. Kladko, Anna Piotrowska, Renata Ratajczak, and Rafał Jakieła. "On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 573–76. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.573.

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In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-SiC are investigated. The Ni/n-SiC ohmic contact with resistance rc ~ 4.2×10-4 Ω cm2 is formed after annealing at 1050oC. For Ni2Si/n-SiC, the contact resistances were rc ~ 4×10-4 Ωcm2 and rc ~ 3.5×10-4 Ωcm2 after annealing at 1000 and 1050oC, respectively. The non-ohmic I-V characteristics are observed for NiSi2/n-SiC contact even after annealing at 1050oC. The features of ohmic contact formation for Ni-based metallization to 4H n-SiC are discussed.
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Wojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts." Micromachines 9, no. 11 (2018): 546. http://dx.doi.org/10.3390/mi9110546.

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.
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Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Zaitsev A.A., and Garmash V.I. "Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures." Semiconductors 55, no. 14 (2022): 2186. http://dx.doi.org/10.21883/sc.2022.14.53873.9603.

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The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au ohmic contacts to GaN nanoheterostructures on silicon substrate was investigated. It has been established that optimization of the RTA process made it possible to obtain ohmic contacts with field emission current flow mechanism. The thermal stability of ohmic contacts for transistors and mesa resistors demonstrated the threshold behavior of the heat treatment temperature. The optimum process parameters for temperature stability and minimum contact resistance were defined. Keywords: ohmic contac
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Dissertations / Theses on the topic "Ohmic resistance"

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Brand, Vitali. "Contamination- induced Interfacial Resistance in Ohmic Microswitch Contacts." Research Showcase @ CMU, 2014. http://repository.cmu.edu/dissertations/448.

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Ohmic nanoswitches have been recently regarded to complement transistors in applications where electrical current leakage is becoming a problem. Although the solid state metal oxide silicon field effect transistor (MOSFET) has fueled a global technology revolution, it is now reaching its performance limits because of device leakage. To avoid electric field-induced damage in MOSFETs, operating voltage and hence threshold voltage must be reduced as linewidth is reduced. However, below a limit, the current cannot be turned off. The ohmic switch approach solves this problem because an air gap that
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Cooksey, Mark. "Method of measuring ohmic resistance in Aluminium reduction cells." Thesis, University of Auckland, 2012. http://hdl.handle.net/2292/11565.

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The objective of this work was to develop a method of directly measuring the ohmic resistance in an industrial aluminium reduction cell. This requires that the voltage due to ohmic resistance be distinguished from the voltage due to the Nernst potential and polarisation. Electrochemical impedance spectroscopy can be used to directly measure ohmic resistance at the laboratory scale, but it is not suitable for an industrial aluminium reduction cell because an alternating current of the required magnitude and frequencies cannot be produced, and the system does not stay at steady state for t
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Clements, Randy Allen. "Development of an ohmic thawing apparatus for accurate measurement of electrical resistance." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013034.

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Almeida, Lia Ramadoss Ramesh. "Experimental and theoretical investigation of contact resistance and reliability of lateral contact type ohmic MEMS relays." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/ALMEIDA_LIA_13.pdf.

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Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.

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Arrazat, Brice. "Maitrise de la microstructure de films minces d'or par traitements de surface pour l'optimisation du contact mécanique et ohmique des micro-relais mems." Thesis, Saint-Etienne, EMSE, 2012. http://www.theses.fr/2012EMSE0644/document.

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Afin d’améliorer la durée de vie des micro-relais MEMS ohmiques, plusieurs traitements de surface de films minces d’or sont réalisés pour augmenter leur dureté tout en conservant une résistance électrique de contact faible.Les revêtements ultrafins de ruthénium (20 à 100 nm) déposés sur l’or augmentent la dureté des surfaces de contact d’un facteur 15. L’implantation ionique de bore ou d’azote (3,5 ppm à 10 % atomique) à une profondeur de 100 nm dans le film mince d’or permet d’atteindre un gain en dureté de 75%. Le contrôle (AFM, EBSD et DRX) de la microstructure induite met en évidence le du
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Zenati, Ali. "Gestion haut niveau et suivi en ligne de l'état de santé des batteries lithium-ion." Thesis, Université de Lorraine, 2012. http://www.theses.fr/2012LORR0391/document.

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Les batteries lithium-ion sont considérées de nos jours comme la solution optimale pour les systèmes de stockage d'énergie, et cela est dû principalement à leurs hautes densités d'énergie et de puissance. Leurs performances, durées de vie, et fiabilités sont liées et dépendent des conditions d'utilisations telles que la température et les courants demandés par l'application. Et afin d'avoir un suivi de l'évolution du vieillissement de la batterie, la détermination de son état de santé (State-Of-Health -SOH-) est une fonction majeure à considérer. Ce mémoire expose les méthodologies ou techniqu
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Abou, Hamad Valdemar. "Elaboration et caractérisation de contacts électriques à base de phases MAX sur SiC pour l'électronique haute température." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI079.

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Les applications de puissance dans lesquelles la température ambiante est élevée, provoquent l’augmentation de la température dans les dispositifs électroniques. De ce fait, il est important de développer les dispositifs électroniques pour pouvoir supporter des densités de courant et de puissance plus élevées. Dans cette thèse, nous avons pour objectif de jeter les bases d’une technologie en totale rupture avec celles existantes pour la fabrication d’une nouvelle génération de contacts électriques à base de Ti3SiC2, stables, fiables et reproductibles sur le Carbure de Silicium pour les applica
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Zenati, Ali. "Gestion haut niveau et suivi en ligne de l'état de santé des batteries lithium-ion." Electronic Thesis or Diss., Université de Lorraine, 2012. http://www.theses.fr/2012LORR0391.

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Les batteries lithium-ion sont considérées de nos jours comme la solution optimale pour les systèmes de stockage d'énergie, et cela est dû principalement à leurs hautes densités d'énergie et de puissance. Leurs performances, durées de vie, et fiabilités sont liées et dépendent des conditions d'utilisations telles que la température et les courants demandés par l'application. Et afin d'avoir un suivi de l'évolution du vieillissement de la batterie, la détermination de son état de santé (State-Of-Health -SOH-) est une fonction majeure à considérer. Ce mémoire expose les méthodologies ou techniqu
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Baud, Laurence. "Étude des interactions métal/SiC : application à la réalisation de contacts ohmiques pour les dispositifs électroniques en carbure de silicium." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0093.

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Le carbure de silicium est un materiau semiconducteur qui presente des proprietes interessantes pour des applications microelectroniques a haute temperature, haute puissance et haute frequence. L'apparition recente sur le marche de materiau massif en sic-6h permet la fabrication de dispositifs electroniques integres. La metallisation constitue une etape importante dans l'assemblage de ces dispositifs electroniques en carbure de silicium. Le projet a concerne la metallisation du sic et plus precisement, cette etude a porte sur le choix d'un metal permettant de former de bons contacts ohmiques s
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Book chapters on the topic "Ohmic resistance"

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Gurevich, V. L., V. B. Pevzner, and K. Hess. "Non-Ohmic Phonon-Assisted Landauer Resistance." In Quantum Transport in Ultrasmall Devices. Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1967-6_26.

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Schröder, D., T. Ostermann, and O. Kalz. "Nonlinear Contact Resistance and Inhomogeneous Current Distribution at Ohmic Contacts." In Simulation of Semiconductor Devices and Processes. Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_110.

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Gajula, Anirudh, Wes Wen Jun Lee, Calvin Pei Yu Wong, and Kuan Eng Johnson Goh. "Achieving Low Resistance Ohmic Contacts to Transition Metal Dichalcogenides (TMDCs)." In IRC-SET 2020. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9472-4_16.

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Pevzner, V. B., V. L. Gurevich, K. Hess, and G. J. Iafrate. "Phonon Generation in Nanowires and Non-ohmic Phonon-Assisted Landauer Resistance." In Hot Carriers in Semiconductors. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_55.

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Zhu, Jiamin, Kui Chen, Kai Liu, Guoqiang Gao, and Guangning Wu. "Prediction Method of Ohmic Resistance and Charge Transfer Resistance for Lithium-Ion Batteries Based on CSA-SVR." In The Proceedings of the 5th International Conference on Energy Storage and Intelligent Vehicles (ICEIV 2022). Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-1027-4_51.

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Chauhan, A., Kuldip Singh, Manish Mathew, Rajender Singh Kundu, and Rajesh Punia. "Highly Reflective Low Resistance Pt/Ag/Ni/Au Based Ohmic Contacts on p-GaN." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_168.

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Barros, K. S., J. A. S. Tenório, V. Pérez-Herranz, and D. C. R. Espinosa. "Determination of Limiting Current Density, Plateau Length, and Ohmic Resistance of a Heterogeneous Membrane for the Treatment of Industrial Wastewaters with Copper Ions in Acid Media." In Energy Technology 2019. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-06209-5_16.

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Davies, Laurence, and Peter Fryer. "Modeling Electrical Resistance (""Ohmic"") Heating Foods." In Food Science and Technology. CRC Press, 2001. http://dx.doi.org/10.1201/9780203908105.ch8.

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"Front Matter." In The Measurement and Correction of Electrolyte Resistance in Electrochemical Tests. ASTM International100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, 1990. http://dx.doi.org/10.1520/stp25277s.

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Reviews and critiques new and existing methods for the correction of ohmic electrolyte resistance, an error inherent in all electrochemical experiments. 13 peer-reviewed papers are divided into sections on theory, critical comparisons of methods, mathematical approaches, and applications. Includes applications on metals in desert soils, buried pipelines, corrosion in concrete, and crevice corrosion case studies.
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Shah, J. "Optical Spectroscopy As A Tool In Hot-Electron Studies." In Hot Electrons in Semiconductors. Oxford University PressOxford, 1997. http://dx.doi.org/10.1093/oso/9780198500582.003.0004.

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Abstract The non-linear electrical conductivity of a semiconductor under the application of an electric field has been a subject of interest since the early days of semiconductor physics (Conwell 1967). At low fields, Ohm's law is obeyed and the resistance and hence the mobility of the electrons or holes remains constant. With increasing electric field, the mobility is no longer constant but begins to decrease. In III-V semiconductors, on which we concentrate in this chapter, this non-ohmic behaviour at intermediate fields can be attributed primarily to heating of the carriers by the applied electric field. Under steady-state bias, the carrier distribution function changes (i.e. the carrier temperature increases) until the rate of input of energy from the field to the carriers is balanced by the rate of loss of energy from the carriers to the lattice. Therefore, investigation of the non-ohmic transport behaviour provides information about how carriers interact with the lattice through various carrier-phonon scattering processes. At larger applied electric fields, other interesting effects such as negative differential resistance, impact ionization and dielectric breakdown occur, but we will not be concerned with these effects in this chapter.
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Conference papers on the topic "Ohmic resistance"

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Fontsere, A., A. Perez-Tomas, M. Placidi, et al. "GaN Ohmic contact resistance vs temperature." In 2011 Spanish Conference on Electron Devices (CDE). IEEE, 2011. http://dx.doi.org/10.1109/sced.2011.5744188.

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Singisetti, U., A. M. Crook, E. Lind, et al. "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373692.

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Jackson, Robert L., Lia Almeida, and Ramesh Ramadoss. "Multiscale Contact Resistance Modeling of Ohmic MEMS Relays." In STLE/ASME 2006 International Joint Tribology Conference. ASME, 2006. http://dx.doi.org/10.1115/ijtc2006-12290.

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Liang, Rirong, Xuezhe Wei, Haifeng Dai, and Bei Sun. "A Simulation of Lithium-Ion Battery Ohmic Resistance Identification." In 2013 IEEE Vehicle Power and Propulsion Conference (VPPC). IEEE, 2013. http://dx.doi.org/10.1109/vppc.2013.6671661.

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Kucera, J., and J. Zikan. "Realization of the ultrahigh-ohmic resistance scale at CMI." In 2014 Conference on Precision Electromagnetic Measurements (CPEM 2014). IEEE, 2014. http://dx.doi.org/10.1109/cpem.2014.6898377.

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Chang, Edward Yi, and Yen-Ku Lin. "Ohmic Contacts with low contact resistance for GaN HEMTs." In 2019 19th International Workshop on Junction Technology (IWJT). IEEE, 2019. http://dx.doi.org/10.23919/iwjt.2019.8802617.

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Shuravin, A. D., A. A. Chertoriyskiy, and A. M. Nizametdinov. "MEASURING DEVICE THE NUMBER OF TURNS IN THE WINDING." In Actual problems of physical and functional electronics. Ulyanovsk State Technical University, 2023. http://dx.doi.org/10.61527/appfe-2023.299-300.

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A device for measuring the number of turns and ohmic resistance of a coil without a core has been developed. The measurement of the number of turns is implemented on the basis of the transformer method. A four-wire connection circuit is used to measure the ohmic resistance of the coil.
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Gaikwad, Manish S., N. K. Deshmukh, V. B. Sawant, and Suhas S. Mohite. "Evaluating Thermal Contact Resistance for Ohmic type RF MEMS switch." In 2019 International Conference on Nascent Technologies in Engineering (ICNTE). IEEE, 2019. http://dx.doi.org/10.1109/icnte44896.2019.8945809.

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Pogorelov, B. T., E. V. Solomin, and G. N. Ryavkin. "Errors of Inductance and Ohmic Resistance of the Cylindrical Inductors." In 2021 International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM). IEEE, 2021. http://dx.doi.org/10.1109/icieam51226.2021.9446299.

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Hosotani, K., T. Ito, Y. Yasui, et al. "Low resistance ohmic contacts to n-InSb employing Sn-alloys." In 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2013. http://dx.doi.org/10.1109/imfedk.2013.6602246.

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Reports on the topic "Ohmic resistance"

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Champlain, J. G., R. Magno, and J. B. Boos. Low Resistance, Unannealed ohmic Contacts to n-Type InAs0.66Sb0.34. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada591231.

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Cole, M. W., P. C. Joshi, M. H. Ervin, et al. Direct Deposition of Low Resistance Thermally Stable Ohmic Contacts to n-SiC. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada399248.

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Ramirez, A. L., and W. D. Daily. Monitoring six-phase ohmic heating of contaminated soils using electrical resistance tomography. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/221041.

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C.A. Wang, D.A. Shiau, R.K. Huang, C.T. Harris, and M.K. Connors. Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/821380.

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