Log in

Relevant bibliographies by topics / Ohmic resistance / Dissertations / Theses

To see the other types of publications on this topic, follow the link: Ohmic resistance.

Dissertations / Theses on the topic 'Ohmic resistance'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 June 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 20 dissertations / theses for your research on the topic 'Ohmic resistance.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Brand, Vitali. "Contamination- induced Interfacial Resistance in Ohmic Microswitch Contacts." Research Showcase @ CMU, 2014. http://repository.cmu.edu/dissertations/448.

Full text

Abstract:

Ohmic nanoswitches have been recently regarded to complement transistors in applications where electrical current leakage is becoming a problem. Although the solid state metal oxide silicon field effect transistor (MOSFET) has fueled a global technology revolution, it is now reaching its performance limits because of device leakage. To avoid electric field-induced damage in MOSFETs, operating voltage and hence threshold voltage must be reduced as linewidth is reduced. However, below a limit, the current cannot be turned off. The ohmic switch approach solves this problem because an air gap that

APA, Harvard, Vancouver, ISO, and other styles

2

Cooksey, Mark. "Method of measuring ohmic resistance in Aluminium reduction cells." Thesis, University of Auckland, 2012. http://hdl.handle.net/2292/11565.

Full text

Abstract:

The objective of this work was to develop a method of directly measuring the ohmic resistance in an industrial aluminium reduction cell. This requires that the voltage due to ohmic resistance be distinguished from the voltage due to the Nernst potential and polarisation. Electrochemical impedance spectroscopy can be used to directly measure ohmic resistance at the laboratory scale, but it is not suitable for an industrial aluminium reduction cell because an alternating current of the required magnitude and frequencies cannot be produced, and the system does not stay at steady state for t

APA, Harvard, Vancouver, ISO, and other styles

3

Clements, Randy Allen. "Development of an ohmic thawing apparatus for accurate measurement of electrical resistance." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013034.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Almeida, Lia Ramadoss Ramesh. "Experimental and theoretical investigation of contact resistance and reliability of lateral contact type ohmic MEMS relays." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/ALMEIDA_LIA_13.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Arrazat, Brice. "Maitrise de la microstructure de films minces d'or par traitements de surface pour l'optimisation du contact mécanique et ohmique des micro-relais mems." Thesis, Saint-Etienne, EMSE, 2012. http://www.theses.fr/2012EMSE0644/document.

Full text

Abstract:

Afin d’améliorer la durée de vie des micro-relais MEMS ohmiques, plusieurs traitements de surface de films minces d’or sont réalisés pour augmenter leur dureté tout en conservant une résistance électrique de contact faible.Les revêtements ultrafins de ruthénium (20 à 100 nm) déposés sur l’or augmentent la dureté des surfaces de contact d’un facteur 15. L’implantation ionique de bore ou d’azote (3,5 ppm à 10 % atomique) à une profondeur de 100 nm dans le film mince d’or permet d’atteindre un gain en dureté de 75%. Le contrôle (AFM, EBSD et DRX) de la microstructure induite met en évidence le du

APA, Harvard, Vancouver, ISO, and other styles

7

Zenati, Ali. "Gestion haut niveau et suivi en ligne de l'état de santé des batteries lithium-ion." Thesis, Université de Lorraine, 2012. http://www.theses.fr/2012LORR0391/document.

Full text

Abstract:

Les batteries lithium-ion sont considérées de nos jours comme la solution optimale pour les systèmes de stockage d'énergie, et cela est dû principalement à leurs hautes densités d'énergie et de puissance. Leurs performances, durées de vie, et fiabilités sont liées et dépendent des conditions d'utilisations telles que la température et les courants demandés par l'application. Et afin d'avoir un suivi de l'évolution du vieillissement de la batterie, la détermination de son état de santé (State-Of-Health -SOH-) est une fonction majeure à considérer. Ce mémoire expose les méthodologies ou techniqu

APA, Harvard, Vancouver, ISO, and other styles

8

Abou, Hamad Valdemar. "Elaboration et caractérisation de contacts électriques à base de phases MAX sur SiC pour l'électronique haute température." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI079.

Full text

Abstract:

Les applications de puissance dans lesquelles la température ambiante est élevée, provoquent l’augmentation de la température dans les dispositifs électroniques. De ce fait, il est important de développer les dispositifs électroniques pour pouvoir supporter des densités de courant et de puissance plus élevées. Dans cette thèse, nous avons pour objectif de jeter les bases d’une technologie en totale rupture avec celles existantes pour la fabrication d’une nouvelle génération de contacts électriques à base de Ti3SiC2, stables, fiables et reproductibles sur le Carbure de Silicium pour les applica

APA, Harvard, Vancouver, ISO, and other styles

9

Zenati, Ali. "Gestion haut niveau et suivi en ligne de l'état de santé des batteries lithium-ion." Electronic Thesis or Diss., Université de Lorraine, 2012. http://www.theses.fr/2012LORR0391.

Full text

Abstract:

Les batteries lithium-ion sont considérées de nos jours comme la solution optimale pour les systèmes de stockage d'énergie, et cela est dû principalement à leurs hautes densités d'énergie et de puissance. Leurs performances, durées de vie, et fiabilités sont liées et dépendent des conditions d'utilisations telles que la température et les courants demandés par l'application. Et afin d'avoir un suivi de l'évolution du vieillissement de la batterie, la détermination de son état de santé (State-Of-Health -SOH-) est une fonction majeure à considérer. Ce mémoire expose les méthodologies ou techniqu

APA, Harvard, Vancouver, ISO, and other styles

10

Baud, Laurence. "Étude des interactions métal/SiC : application à la réalisation de contacts ohmiques pour les dispositifs électroniques en carbure de silicium." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0093.

Full text

Abstract:

Le carbure de silicium est un materiau semiconducteur qui presente des proprietes interessantes pour des applications microelectroniques a haute temperature, haute puissance et haute frequence. L'apparition recente sur le marche de materiau massif en sic-6h permet la fabrication de dispositifs electroniques integres. La metallisation constitue une etape importante dans l'assemblage de ces dispositifs electroniques en carbure de silicium. Le projet a concerne la metallisation du sic et plus precisement, cette etude a porte sur le choix d'un metal permettant de former de bons contacts ohmiques s

APA, Harvard, Vancouver, ISO, and other styles

11

Fang, Chi-Shin, and 方啟鑫. "Low-resistance ohmic contacts with high reflectivity on p-type GaN." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/67426845057741935212.

Full text

Abstract:

碩士<br>國立中央大學<br>電機工程研究所<br>92<br>In this letter, we reported a low-resistance, thermally stable and high-reflectivity Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) Ohmic contact to p-type GaN: Mg (1.5×1017 cm-3 ). The specific contact resistance of the contact is as low as 1.23×10-2 ohm-cm2. After 48 hours annealing in a N2 ambient at 500℃, the specific contact resistance keeps below 1.5 ×10-2 ohm-cm2. The effect of Ni barrier layer of improvement of thermal stability in Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) is proposed and discussed in this work. Reflectivity of Pd(3 nm)/Ni(2 nm

APA, Harvard, Vancouver, ISO, and other styles

12

Li-Chien, Chen, and 陳立千. "Microstructural study of the low-resistance ohmic contact to p-GaN." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/35782349130031366298.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Chen, Ming-Lei, and 陳明磊. "The research of ohmic contact and specific contact resistance on p-GaN." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/05653274888356430456.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Wakchaure, Yogesh B. "Low-resistance ohmic contacts to p-InAs for high-speed device applications." 2004. http://etd.nd.edu.lib-proxy.nd.edu/ETD-db/theses/available/etd-04162004-133549/.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Cheng, Po-yuan, and 鄭博元. "High reflectance and low resistance AgLa alloy ohmic contacts on p-GaN." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/83579201765772471101.

Full text

Abstract:

碩士<br>國立中央大學<br>材料科學與工程研究所<br>100<br>Due to Light-emitting diode has great progress in recent years, high power GaN-based Light-emitting diode has been emphasized. But conventional LED could not satisfy this demand, two types of LED device structure, which are vertical structure LED and flip-chip structure LED, have been proposed to fabricate high power LED. Because p-type GaN has high resistivity, it is critical to search for a metal which has high reflectance and good ohmic contact to reduce its contact resistivity. silver has the highest reflectivity in visible spectrum and forms a good con

APA, Harvard, Vancouver, ISO, and other styles

16

Chiang, Pei-Yi, and 江佩宜. "nGaAsSb base DHBT with low emitter size effect and low resistance ohmic contacts." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/86709040056630082059.

Full text

Abstract:

碩士<br>國立中央大學<br>電機工程研究所<br>97<br>A novel heterojunction bipolar transistor (HBT) with an InGaAsSb base was proposed and demonstrated by this group in 2006.This novel transistor not only has low turn-on voltage and low offset voltage but also has excellent radio-frequency performance. In order to increase the cut-off frequency to terahertz, scaling down the emitter width to one hundred nanometers or below is necessary. However, both surface recombination current and contact resistance might increase and degrade the device’s performance at these physical dimensions.. In this work, efforts are fo

APA, Harvard, Vancouver, ISO, and other styles

17

Hsiang-Yi, Wang. "High Transparent and Low Resistance Molybdenum-doped Indium Oxide Ohmic Contact to p-GaN." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1407200618472600.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Wang, Hsiang-Yi, and 王湘儀. "High Transparent and Low Resistance Molybdenum-doped Indium Oxide Ohmic Contact to p-GaN." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/82352067612753835214.

Full text

Abstract:

碩士<br>國立臺灣大學<br>光電工程學研究所<br>94<br>Abstract: Ohmic contacts between electrodes and semiconductors play a crucial role in performance of light emitting diodes (LEDs). Up to now, very low resistance ohmic contacts on n-type GaN have been consistently preformed. But for p-type GaN ohmic contacts, it has been difficult to achieve low resistance contacts due to both the difficulty of growing heavily doped p-GaN (>1018 cm-3), and the absence of metal with a work function larger than that of p-GaN(∼7.5eV), which limits the operating voltage of the devices. Owing to the shortcomings of metal schemes, t

APA, Harvard, Vancouver, ISO, and other styles

19

Lan, Yung-Ling, and 藍永凌. "Highly smooth low-resistance n-type ohmic contacts to AlGaN/GaN high electron mobility transistors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/42265944871409881640.

Full text

Abstract:

碩士<br>國立中央大學<br>電機工程研究所<br>97<br>Wide bandgap AlGaN/GaN heterostructures have been widely used in high electron mobility transistors (HEMTs) for high temperature, high frequency, and high power applications. For high power devices, ohmic contacts with low contact resistance, smooth surface and clear edge definition are essential as they are closely related to the performance, reliability and reproducibility of the devices. We carry out a comparative study on the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Al/Mo/Au, Ti/Cr/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal c

APA, Harvard, Vancouver, ISO, and other styles

20

Lin, Tai-Ming, and 林泰名. "Development of Ohmic Contacts with Low Surface Roughness and Low Contact Resistance on AlGaN/GaN HEMTs." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/08365759460063234980.

Full text

Abstract:

碩士<br>國立交通大學<br>材料科學與工程學系<br>101<br>The characteristics of Ohmic contacts on GaN high electron mobility transistors (HEMTs) have profound influence to the DC and RF performance. The most critical issue for Ohmic contacts on GaN HEMTs is the roughness of the surface morphology caused by interdiffusion of metals under high temperature annealing. The rough surface morphology will cause difficulty in E-beam lithography aligner and potential degradation in device performance and reliability. In this study, I optimized the surface morphology of the Ohmic contact on GaN HEMTs with improved barrie

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!