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Journal articles on the topic 'Ohmic resistance'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 June 2024

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1

Lira Garcia Barros, Rodrigo, Matheus Theodorus de Groot, and John van der Schaaf. "(Digital Presentation) Solving the Mystery of Ohmic Resistance in Zero-Gap Alkaline Water Electrolyzers Using Electrochemical Impedance Spectroscopy and Polarization Curves." ECS Meeting Abstracts MA2022-02, no. 39 (2022): 1443. http://dx.doi.org/10.1149/ma2022-02391443mtgabs.

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Hydrogen can be produced using renewable energy sources through alkaline water electrolysis (AWE). Alkaline water electrolyzers are made of inexpensive materials such as nickel perforated electrodes and the Zirfon porous diaphragm. However, one of the bottlenecks of this technology is the high internal ohmic resistance compared to other technologies, which implies that the technology is traditionally operated at low current densities. To decrease the ohmic resistance advanced AWE electrolyzers use a zero-gap configuration. However, even with such a zero-gap configuration the ohmic resistance r

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2

Khan, Prof Saniya. "A Research on Modeling of High Impedance Fault Detection for Protection of Dc Distribution System." International Journal for Research in Applied Science and Engineering Technology 11, no. 3 (2023): 269–73. http://dx.doi.org/10.22214/ijraset.2023.49372.

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Abstract: High ohmic resistance faults area unit troublesome to find by standard overcurrent relays principally thanks to their low current magnitudes. This paper describes a model for representing high ohmic resistance faults in electrical distribution systems. The model is predicated in a very non-linear resistance representing the high ohmic resistance path throughout this sort of faults. Supported this model, the performance of many electrical variables associated to high ohmic resistance faults is analyzed and an algorithmic rule for top ohmic resistance fault detection in electrical dist

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3

Yoo, Hyun Sik, Yonas Megra, Ji Won Suk, and Wonyoung Lee. "Interface Resistance Analysis in Solid Oxide Fuel Cells." ECS Meeting Abstracts MA2023-01, no. 54 (2023): 245. http://dx.doi.org/10.1149/ma2023-0154245mtgabs.

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A sophisticated design of the interface structure between the cathode and the electrolyte is essential to improve the performance of solid oxide fuel cells (SOFCs). It is because the interface is the place where it directly affects both the ohmic resistance and the polarization resistance as interface contact and interface reaction, respectively. To improve interface properties, electrolyte surface treatment or inserting interface functional layer between the cathode and the electrolyte have been applied. They improved cell performance by effectively enhancing the interfacial characteristics s

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4

Niaz, Atif Khan, Woong Lee, SeungCheol Yang, and Hyung-Tae Lim. "Tracing Resistances of Anion Exchange Membrane Water Electrolyzer during Long-term Stability Tests." Journal of Electrochemical Science and Technology 12, no. 3 (2021): 358–64. http://dx.doi.org/10.33961/jecst.2021.00094.

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In this study, an anion exchange membrane water electrolysis (AEMWE) cell was operated for ~1000 h at a voltage bias of 1.95 V. Impedance spectra were regularly measured every ~ 100 h, and changes in the ohmic and non-ohmic resistance were traced as a function of time. While there was relatively little change in the I–V curves and the total cell resistance during the long-term test, we observed various electrochemical phenomena in the cell: 1) initial activation with a decrease in both ohmic and non-ohmic resistance; 2) momentary and non-permanent bubble resistance (non-ohmic resistance) depen

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5

Raka, Yash Dharmendra, Robert Bock, Håvard Karoliussen, Øivind Wilhelmsen, and Odne Stokke Burheim. "The Influence of Concentration and Temperature on the Membrane Resistance of Ion Exchange Membranes and the Levelised Cost of Hydrogen from Reverse Electrodialysis with Ammonium Bicarbonate." Membranes 11, no. 2 (2021): 135. http://dx.doi.org/10.3390/membranes11020135.

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The ohmic resistances of the anion and cation ion-exchange membranes (IEMs) that constitute a reverse electrodialysis system (RED) are of crucial importance for its performance. In this work, we study the influence of concentration (0.1 M, 0.5 M, 1 M and 2 M) of ammonium bicarbonate solutions on the ohmic resistances of ten commercial IEMs. We also studied the ohmic resistance at elevated temperature 313 K. Measurements have been performed with a direct two-electrode electrochemical impedance spectroscopy (EIS) method. As the ohmic resistance of the IEMs depends linearly on the membrane thickn

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6

Repetto, Laura, Gerry Agnew, Adriana Del Borghi, Fabio Di Benedetto, and Paola Costamagna. "Detailed Simulation of the Ohmic Resistance of Solid Oxide Fuel Cells." Journal of Fuel Cell Science and Technology 4, no. 4 (2006): 413–17. http://dx.doi.org/10.1115/1.2756847.

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A theoretical evaluation of the ohmic resistance of solid oxide fuel cells (SOFCs) is very important because internal ohmic resistances account for a large part of the losses occurring in SOFCs and significantly affect cell performance. However, in the majority of cases, a detailed evaluation of ohmic losses is not an elementary task, since the structure of the geometry makes it difficult to apply simple laws, such as R=ρl∕S. The solution of a PDE equation is required, which has to be performed numerically. In this paper, two different numerical approaches have been applied to the simulation o

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7

Yue, Yunrui, Song Li, Xinbing Cheng, et al. "Effects of temperature on the ohmic internal resistance and energy loss of Lithium-ion batteries under millisecond pulse discharge." Journal of Physics: Conference Series 2301, no. 1 (2022): 012014. http://dx.doi.org/10.1088/1742-6596/2301/1/012014.

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Abstract Battery energy storage technology has a promising future in the field of compact high-power pulse drivers due to its high energy storage density. In this paper, three types of high-performance lithium batteries, such as lithium titanate (LTO) battery, lithium iron phosphate (LFP) battery, and Ni,Co,Al (NCR) ternary lithium-ion battery, have been studied in different ambient temperatures by using DC internal resistance measurement method. The result shows that the ohmic internal resistance of lithium batteries increases when the temperature drops. When the temperature is above -30 °C,

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8

Kuchuk, Andrian V., V. P. Kladko, Anna Piotrowska, Renata Ratajczak, and Rafał Jakieła. "On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 573–76. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.573.

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In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-SiC are investigated. The Ni/n-SiC ohmic contact with resistance rc ~ 4.2×10-4 Ω cm2 is formed after annealing at 1050oC. For Ni2Si/n-SiC, the contact resistances were rc ~ 4×10-4 Ωcm2 and rc ~ 3.5×10-4 Ωcm2 after annealing at 1000 and 1050oC, respectively. The non-ohmic I-V characteristics are observed for NiSi2/n-SiC contact even after annealing at 1050oC. The features of ohmic contact formation for Ni-based metallization to 4H n-SiC are discussed.

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9

Wojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts." Micromachines 9, no. 11 (2018): 546. http://dx.doi.org/10.3390/mi9110546.

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

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10

Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Zaitsev A.A., and Garmash V.I. "Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures." Semiconductors 55, no. 14 (2022): 2186. http://dx.doi.org/10.21883/sc.2022.14.53873.9603.

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The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au ohmic contacts to GaN nanoheterostructures on silicon substrate was investigated. It has been established that optimization of the RTA process made it possible to obtain ohmic contacts with field emission current flow mechanism. The thermal stability of ohmic contacts for transistors and mesa resistors demonstrated the threshold behavior of the heat treatment temperature. The optimum process parameters for temperature stability and minimum contact resistance were defined. Keywords: ohmic contac

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11

Lumpkin, Nancy E., Gregory R. Lumpkin, and K. S. A. Butcher. "Investigation of low- and high-resistance Ni–Ge–Au ohmic contacts to n+ GaAs using electron microbeam and surface analytical techniques." Journal of Materials Research 11, no. 5 (1996): 1244–54. http://dx.doi.org/10.1557/jmr.1996.0159.

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A process for the formation of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs has been refined using multivariable screening and response surface experiments. Samples from the refined, low-resistance process (which measure 0.05 ± 0.02 Ω · mm) and the unrefined, higher resistance process (0.17 ± 0.02 Ω · mm) were characterized using analytical electron microscopy (AEM), transmission electron microscopy (TEM), scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), and x-ray photoemission spectroscopy (XPS) depth profiling methods. This approach was used to identify microstruct

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12

Ji, Yuan, Sen Huang, Qimeng Jiang, et al. "Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process." Electronics 12, no. 8 (2023): 1767. http://dx.doi.org/10.3390/electronics12081767.

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Non-recessed ohmic contact resistance (Rc) on ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure was effectively reduced to a low value of 0.16 Ω·mm. The method called the ‘ohmic-before-passivation’ process was adopted to eliminate the effects of fluorine plasma etching, in which an alloyed Ti/Al/Ni/Au ohmic metal stack was formed prior to passivation. The recovery of 2-D Electron Gas (2DEG) adjacent to the ohmic contact was enhanced by composite double-layer dielectric with AlN/SiNx passivation. It is found that the separation between the recovered 2DEG and the ohmic contacting edge

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13

Valappil, Sreenath Mylo, Shinya Ohmagari, Abdelrahman Zkria, et al. "Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application." AIP Advances 12, no. 8 (2022): 085007. http://dx.doi.org/10.1063/5.0093470.

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n-Type (phosphorus-doped) diamond is a promising material for diamond-based electronic devices. However, realizing good ohmic contacts for phosphorus-doped diamonds limits their applications. Thus, the search for non-conventional ohmic contacts has become a hot topic for many researchers. In this work, nanocarbon ohmic electrodes with enhanced carrier collection efficiency were deposited by coaxial arc plasma deposition. The fabricated nanocarbon ohmic electrodes were extensively examined in terms of specific contact resistance and corrosion resistance. The circular transmission line model the

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14

Meskinis, S., K. Slapikas, and S. Smetona. "Low resistance Al nGaAs ohmic contacts." Semiconductor Science and Technology 17, no. 9 (2002): 907–10. http://dx.doi.org/10.1088/0268-1242/17/9/301.

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15

Brun, D., B. Daudin, and E. Ligeon. "Low resistance ohmic contact onn‐CdTe." Applied Physics Letters 65, no. 4 (1994): 475–77. http://dx.doi.org/10.1063/1.112986.

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16

Zhong, Qing, Xueshen Wang, Jinjin Li, and Yuan Zhong. "Electrical and magnetic properties of ohmic contacts of the quantum hall resistance devices." Modern Physics Letters B 34, no. 23 (2020): 2050238. http://dx.doi.org/10.1142/s0217984920502383.

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Quantum Hall effect is used to realize resistance standard which is in terms of the Planck constant [Formula: see text] and elementary charge [Formula: see text] in metrology. The quantum Hall resistance devices are fabricated based on two-dimensional electron gas formed in [Formula: see text] as heterostructures. Low-resistance Ohmic contact to the 2DEG is crucial in fabricating quantum Hall devices to obtain reproducible and accurate results. Annealed Au/Ge/Ni multilayer is widely used for Ohmic contacts to GaAs. In this paper, electrical and magnetic properties of optimized Ohmic contacts o

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17

Liang, Kaizhi, Zhaosheng Zhang, Peng Liu, Zhenpo Wang, and Shangfeng Jiang. "Data-Driven Ohmic Resistance Estimation of Battery Packs for Electric Vehicles." Energies 12, no. 24 (2019): 4772. http://dx.doi.org/10.3390/en12244772.

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Accurate state-of-health (SOH) estimation for battery packs in electric vehicles (EVs) plays a pivotal role in preventing battery fault occurrence and extending their service life. In this paper, a novel internal ohmic resistance estimation method is proposed by combining electric circuit models and data-driven algorithms. Firstly, an improved recursive least squares (RLS) is used to estimate the internal ohmic resistance. Then, an automatic outlier identification method is presented to filter out the abnormal ohmic resistance estimated under different temperatures. Finally, the ohmic resistan

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18

ROCCAFORTE, FABRIZIO, FRANCESCO LA VIA, and VITO RAINERI. "OHMIC CONTACTS TO SIC." International Journal of High Speed Electronics and Systems 15, no. 04 (2005): 781–820. http://dx.doi.org/10.1142/s0129156405003429.

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In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10-5-10-6 Ω cm 2) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni -based and Al/Ti -based contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n- and p-type Si

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19

Na, Moonkyong, In Ho Kang, Jeong Hyun Moon, and Wook Bahng. "Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer." Materials Science Forum 924 (June 2018): 397–400. http://dx.doi.org/10.4028/www.scientific.net/msf.924.397.

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Nickel (Ni) is the most widely used metal for the formation of ohmic contact on n-type SiC. However, the irregular contact can potentially cause degradation in the device performance. To form the uniform ohmic interface, titanium (Ti) was applied as a barrier layer. Ni/Ti/SiC and Ti/Ni/SiC contact metal structures were prepared, and ohmic contacts were formed using a rapid thermal annealing process. The interfacial properties of both contact metal structures were enhanced by applying the Ti layer. The specific contact resistance of ohmic contacts showed a slightly lower or similar value (~ low

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20

Holland, Anthony, Yue Pan, Mohammad Alnassar, and Stanley Luong. "Circular test structures for determining the specific contact resistance of ohmic contacts." Facta universitatis - series: Electronics and Energetics 30, no. 3 (2017): 313–26. http://dx.doi.org/10.2298/fuee1703313h.

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Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. Error correction has been a major concern in regard to specific contact resistance test structures and investigations by finite element modeling demonstrate that test structures utilising circular contacts can be more reliable than those designed to have square shaped contacts as test contacts become necessarily smaller. Finite element modeling software NASTRAN can be

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21

Ann Annie Shaju, G. Anjaly. "Ohmic Heating Technology - A Review." International Journal of Current Microbiology and Applied Sciences 10, no. 12 (2021): 177–82. http://dx.doi.org/10.20546/ijcmas.2021.1012.020.

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Ohmic heating is a novel technology for food processing. This review paper summarizes there search progress and application in Ohmic heating technology used in food processing. Ohmic heating is an electrical resistance heating method for the heat treatment of food products. When electric current passes through the food, the food heats up because of its internal electrical resistance. In this process heating rate depends upon the electrical conductivity and field strength. By this method a product under goes a minimum structural damage, retain its nutritional value. This technique gives excelle

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22

Kim, Il Ho. "Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs." Materials Science Forum 449-452 (March 2004): 921–24. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.921.

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Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In both ohmic contacts, low-resistance and non-spiking planar interfaces were obtained by rapid thermal annealing. RF performance of the AlGaAs/GaAs HBT was also examined by employing these contact systems.

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23

Crofton, John, John R. Williams, A. V. Adedeji, et al. "Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC." Materials Science Forum 527-529 (October 2006): 895–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.895.

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Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented. Elevated temperature measurements of specific contact resistance are compared to theoretical calculations. The calculations require the acceptor doping concentration and the contact’s barrier height. Epitaxial material has a known acceptor value thereby allowing the barrier height to be deduced by requiring agreement between the calculated and measured values of the contact resistance. Calculations of the contact resistance for implanted material use the ba

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24

Alhelais, Reem, Pijush K. Ghosh, Andrian V. Kuchuk, et al. "Low resistance Ohmic contacts to graded InGaN." Materials Science in Semiconductor Processing 153 (January 2023): 107114. http://dx.doi.org/10.1016/j.mssp.2022.107114.

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25

Ozawa, M., F. Hiei, M. Takasu, A. Ishibashi, and K. Akimoto. "Low resistance Ohmic contacts forp‐type ZnTe." Applied Physics Letters 64, no. 9 (1994): 1120–22. http://dx.doi.org/10.1063/1.110825.

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26

Crook, Adam M., Erik Lind, Zach Griffith, et al. "Low resistance, nonalloyed Ohmic contacts to InGaAs." Applied Physics Letters 91, no. 19 (2007): 192114. http://dx.doi.org/10.1063/1.2806235.

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27

Hirano, Makoto, and Fumihiko Yanagawa. "Low-Resistance Ohmic Contacts to p-GaAs." Japanese Journal of Applied Physics 25, Part 1, No. 8 (1986): 1268–69. http://dx.doi.org/10.1143/jjap.25.1268.

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28

Cheremisin, M. V. "Peltier-effect-induced correction to ohmic resistance." Journal of Experimental and Theoretical Physics 92, no. 2 (2001): 357–60. http://dx.doi.org/10.1134/1.1354694.

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29

Gefen, Yuval, and D. J. Thouless. "Onset of Ohmic resistance in submicron systems." Philosophical Magazine B 56, no. 6 (1987): 1005–7. http://dx.doi.org/10.1080/13642818708215337.

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30

Stemp, M., P. Agarwal, S. Mischler, and D. Landolt. "The importance of ohmic resistance in tribocorrosion." Matériaux & Techniques 87 (1999): 29–33. http://dx.doi.org/10.1051/mattech/199987120029s.

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31

Gelmont, Boris, and Michael Shur. "Spreading resistance of a round ohmic contact." Solid-State Electronics 36, no. 2 (1993): 143–46. http://dx.doi.org/10.1016/0038-1101(93)90132-a.

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32

Somakettarin, Natthawuth, and Achara Pichetjamroen. "Characterization of a Practical-Based Ohmic Series Resistance Model under Life-Cycle Changes for a Lithium-Ion Battery." Energies 12, no. 20 (2019): 3888. http://dx.doi.org/10.3390/en12203888.

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Understanding battery characteristic behaviors is indispensable in designing and managing large-scale battery-based energy storage systems in high-power applications. This paper presents a practical-based characterization method to model the ohmic series resistance of lithium-ion batteries under life-cycle consideration. Aging cells were prepared in a controlled environment, and the testing information was automatically characterized using a developed computer-based battery test system. An experimental methodology based on the cycling of pulse tests is applied for modeling the ohmic series res

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33

Егоркин, В. И., В. Е. Земляков, А. В. Неженцев, А. А. Зайцев та В. И. Гармаш. "Особенности температурной стабильности сопротивления омических контактов к наногетероструктурам на основе GaAs и GaN". Физика и техника полупроводников 55, № 12 (2021): 1260. http://dx.doi.org/10.21883/ftp.2021.12.51716.9603.

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The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au ohmic contacts to GaN nanoheterostructures on silicon substrate was investigated. It has been established that optimization of the RTA process made it possible to obtain ohmic contacts with field emission current flow mechanism. The thermal stability of ohmic contacts for transistors and mesa resistors demonstrated the threshold behavior of the heat treatment temperature. The optimum process parameters for temperature stability and minimum contact resistance were defined.

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34

Tamaso, Hideto, Shunsuke Yamada, Hiroyuki Kitabayashi, and Taku Horii. "Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC." Materials Science Forum 778-780 (February 2014): 669–72. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.669.

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An ohmic contact process by using tri-layer materials for a source contact of a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is proposed. The authors validate its extremely low contact resistance for both n-type and p-type SiC by a simple process. The characteristics of Ti/Al/Si ohmic contacts were measured by using the transfer length method (TLM). We examined the dependence of the contact resistance on the thickness of each layer of Ti/Al/Si. Then, it is found that Ti/Al/Si contacts with an appropriate thickness show excellent ohmic properties for both n-t

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35

Suzuki, Yu, Etsushi Taguchi, Shouhei Nagata, and Masataka Satoh. "Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)." Materials Science Forum 556-557 (September 2007): 705–8. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.705.

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The specific contact resistance of Al, Ti and Ni ohmic contacts to N+ implanted 3C-SiC(100) has been investigated by means of TLM method. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 1.4×1015 cm-2 at room temperature and is subsequently annealed by RF annealer at a temperature of 1400 oC for 10 min in Ar gas flow, resulting in the sheet resistance of 130 0/sq. The deposited Al layer on the annealed sample shows the extremely low specific contact resistance of about 1×10-7 0cm2. The ohmic contacts of

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36

de Silva, Milantha, Teruhisa Kawasaki, and Shinichiro Kuroki. "Low Resistance Ti₅Si₃/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face." Materials Science Forum 924 (June 2018): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.924.409.

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Low-resistance Ohmic contact on n+4H-SiC C-face with Titanium was demonstrated. In a conventional NiSi Ohmic contat on n-type 4H-SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, laser annealing and Ti metal were introduced to form both silicide and carbide. Ti (75 nm)/SiC and Ni (75 nm)/SiC Ohmic contacts were formed on backside C-face of high concentration impurity doped 4H-SiC substrates with and without activation annealing. Electrical properties were investigated after 40 nanoseconds pulse las

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37

Kim, Yukyung, Man-Kyung Kim, Kwang Hyeon Baik, and Soohwan Jang. "Low-Resistance Ti/Au Ohmic Contact on (001) Plane Ga₂O₃ Crystal." ECS Journal of Solid State Science and Technology 11, no. 4 (2022): 045003. http://dx.doi.org/10.1149/2162-8777/ac6118.

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We studied the Ti/Au Ohmic contact on (001) plane Ga2O3 single crystal wafer as a function of annealing temperature and crystallographic orientation. The lowest specific contact resistances of ∼5 × 10−4 Ω·cm2 were obtained at 400 °C annealing temperature under nitrogen ambience. The Ohmic metal contact became degraded when annealed above 500 °C. The formation of Ti oxide might be responsible for the degradation of Ohmic contact at high annealing temperatures. In comparison with (010) Ga2O3 substrate, the Ohmic contact could be more easily formed on ( 2 ¯ 01 ) and (001) Ga2O3 planes, possibly d

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38

Liday, Jozef, Peter Vogrinčič, Viliam Vretenár, Mário Kotlár, Marián Marton, and Vlastimil Řeháček. "Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN." Journal of Electrical Engineering 66, no. 6 (2015): 344–47. http://dx.doi.org/10.2478/jee-2015-0057.

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AbstractDue to their properties, carbon nanotubes and reduced graphene oxide are highly promising materials for obtaining low-resistance ohmic contacts to p-GaN with good optical transparency for visible light. In this contribution we designed a combination of these two materials, along with a cap layer, to be used as structures for ohmic contacts to p-GaN. Carbon nanotube (CNT) and graphene oxide (GO) layers were deposited by spray coating using an off-the-shelf airbrush on p-GaN layers. The metallic layers of Au/Pd were vapour deposited. The structures for ohmic contacts were prepared in two

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39

Ervin, Matthew H., Kenneth A. Jones, Un Chul Lee, Taniya Das, and M. C. Wood. "An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts." Materials Science Forum 527-529 (October 2006): 859–62. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.859.

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While nickel ohmic contacts to n-type silicon carbide have good electrical properties, the physical contact, and therefore the reliability, can be poor. An approach is described for using the good electrical properties of Ni ohmic contacts while using another metal for its desired mechanical, thermal and/or chemical properties. In the present work, once the Ni contacts have been annealed forming nickel silicides and achieving low contact resistance, they are etched off. Removing the primary Ni contacts also eliminates the poor morphology, voids, and at least some of the excess carbon produced

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Sheraz, Muhammad, and Woojin Choi. "A Novel Technique for Fast Ohmic Resistance Measurement to Evaluate the Aging of Lithium-Ion xEVs Batteries." Energies 16, no. 3 (2023): 1416. http://dx.doi.org/10.3390/en16031416.

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Lithium-ion batteries are gaining more attention due to the rapid growth of electrical vehicles (EVs). Additionally, the industry is putting a lot of effort into reusing EV batteries in energy storage systems (ESS). The optimal performance of the repurposed battery system is highly dependent on the individual batteries used in it. These batteries need to be similar in terms of battery capacity, state of health (SOH), and remaining useful life (RUL). Therefore, battery grading techniques are expected to play a vital role in this newly emerging industry. There are various methods suggested to ev

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Rock, P., G. A. Patterson, S. Permutt, and J. T. Sylvester. "Nature and distribution of vascular resistance in hypoxic pig lungs." Journal of Applied Physiology 59, no. 6 (1985): 1891–901. http://dx.doi.org/10.1152/jappl.1985.59.6.1891.

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We used the vascular occlusion technique in pig lungs isolated in situ to describe the effects of hypoxia on the distribution of vascular resistance and to determine whether the resistive elements defined by this technique behaved as ohmic or Starling resistors during changes in flow at constant outflow pressure, changes in outflow pressure at constant flow, and reversal of flow. During normoxia, the largest pressure gradient occurred across the middle compliant region of the vasculature (delta Pm). The major effect of hypoxia was to increase delta Pm and the gradient across the relatively non

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Fu, Ming, Gong Lei Jin, Xiao Ding, Lin Fan, and Dong Chen. "Study on Properties of Thick-Film Front Silver Electrodes for Silicon Solar Cells." Key Engineering Materials 537 (January 2013): 209–13. http://dx.doi.org/10.4028/www.scientific.net/kem.537.209.

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The front electrode is usually made by the screen printing thick-film silver pastes and the high-temperature firing process in industrial production of silicon solar cells. This paper analyzed the ohmic contact mechanism of thick-film front silver electrodes and studied the microstructure of Ag-Si interface by SEM. The paste samples, used to form front silver electrodes of silicon solar cells, were prepared. Thick-film silver electrodes were printed on silicon wafers with different sheet resistances, and the relationships between the sheet resistances and the contact properties were investigat

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Orazem, Mark E. "(Invited) Numerical Simulation of Ohmic Impedance." ECS Meeting Abstracts MA2023-01, no. 45 (2023): 2464. http://dx.doi.org/10.1149/ma2023-01452464mtgabs.

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Impedance spectroscopy measurements are often confounded by high-frequency phenomena associated with frequency-dependent ohmic resistance. Newman introduced the concept of frequency dispersion to account for the effect of the disk electrode geometry on the impedance response [1]. The phenomenon described by Newman in terms of frequency-dependent capacitance and ohmic resistance may be considered as an ohmic impedance, a transfer function associated with the resistance of the electrolyte to passage of current under the influence of geometry-induced (and frequency-dependent) non-uniform current

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Li, Yifan, Jing Hu, Joan Papavasiliou, Zhiyong Fu, Li Chen, and Haibin Li. "Enhanced MEA Performance for an Intermediate-Temperature Fuel Cell with a KH5(PO4)2-Doped Polybenzimidazole Membrane." Membranes 12, no. 8 (2022): 728. http://dx.doi.org/10.3390/membranes12080728.

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This work exhibits an effective approach to enhance the performance of membrane-electrode assembly (MEA) with KH5(PO4)2-doped PBI membrane, by adding phosphoric acid (PA) in the catalyst layer (CL). The ohmic resistance and single-cell performance of the MEA, treated with PA, are reduced by ~80% and improved by ~800%, respectively, compared to that of untreated MEA. Based on the MEA pretreated with PA, the influence of humidity and temperature on the resistance and the single-cell performance are investigated. Under humidified gas conditions, the ohmic resistance of MEA is reduced but the char

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Adedeji, A. V., Ayayi Claude Ahyi, John R. Williams, et al. "Composite Ohmic Contacts to SiC." Materials Science Forum 527-529 (October 2006): 879–82. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.879.

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Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion and oxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture of Ar and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-Si- N barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion of Au. The electrical and mechanical characteristics of the composite contacts were stable after hundreds of hours of annealing in air at 350°C. We repo

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Cichoň, Stanislav, Petr Macháč, and Jiří Vojtík. "Ni, NiSi₂ and Si Secondary Ohmic Contacts on SiC with High Thermal Stability." Materials Science Forum 740-742 (January 2013): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.797.

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A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic contacts were prepared and tested at 300°C on air for hundreds of hours. NiSi2 and Si showed high thermal stability. Moreover, also the so called secondary contacts showed preserved good electrical and structural properties in the thermal test. The secondary ohmic contacts are formed from original ohmic contacts after they are etched off and replaced with new ones. Secondary ohmic contacts originate in a certain surface modification of the SiC substrate creat

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LI Zai-jin, 李再金, 曲轶 QU Yi, 薄报学 BO Bao-xue, 刘国军 LIU Guo-jun, and 王立军 WANG Li-jun. "Low Ohmic Contact Resistance 980 nm VCSELs Fabricated." ACTA PHOTONICA SINICA 41, no. 2 (2012): 249–52. http://dx.doi.org/10.3788/gzxb20124102.0249.

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Sheremet, V. N. "Metrological aspects of measuring resistance of ohmic contacts." Radioelectronics and Communications Systems 53, no. 3 (2010): 119–28. http://dx.doi.org/10.3103/s0735272710030015.

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Ho, Jin-Kuo, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih. "Low-resistance ohmic contacts to p-type GaN." Applied Physics Letters 74, no. 9 (1999): 1275–77. http://dx.doi.org/10.1063/1.123546.

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Gershman, Israel, and Joseph B. Bernstein. "Solder-Joint Quantitative Crack Analysis—Ohmic Resistance Approach." IEEE Transactions on Components, Packaging and Manufacturing Technology 2, no. 5 (2012): 748–55. http://dx.doi.org/10.1109/tcpmt.2012.2188894.

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