Dissertations / Theses on the topic 'On-chip transformer'

A novel concept of on-chip bondwire inductors and transformers with ferrite epoxy glob coating is proposed, offering a cost effective approach to realize power systems on chip (PSoC) or System-in-Package (PSiP). The concept has been investigated both experimentally and with finite element modeling. Improvement in total inductance is demonstrated for multi-turn bondwire inductors over single bondwire inductors. The inductance and Q factor can be further boosted with coupled multi-turn inductor concept. Transformer parameters including self- and mutual inductance, and coupling factors are extracted from both modeled and measured S-parameters. More importantly, the bondwire magnetic components can be easily integrated into SoC manufacturing processes with minimal changes to the layout, and open enormous possibilities for realizing cost-effective, high current, high efficiency PSoC's or PSiP's. The design guidelines for single bondwire inductors as well as multi-turn inductors are discussed step by step in several chapters. Not only is the innovated concept for bondwire inductor with ferrite ink presented, but also the practical implementation and design rules are given. With all the well defined steps, people who want to use these bondwire inductors with ferrite ink in their PSoC research or products will find it as simple as using commercial inductors. Last but not least, the PSoC concept using a bondwire inductor is demonstrated by building the prototype of dc-dc buck converter IC as well as the whole package. IC and the whole function block are tested and presented in this work.<br>Ph.D.<br>School of Electrical Engineering and Computer Science<br>Engineering and Computer Science<br>Electrical Engineering PhD

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC's such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process. The on-chip inductor has been an important research topic since it was first proposed in early 1990's. Significant amount of study has been accomplished and reported in literature; whereas some methods have been used in industry, but not released to public. It is of no doubt that a comprehensive solution is not exist yet. A comprehensive study of previous will be first address. Later author will point out the in-adequacy of skin effect and proximity effect as cause of current crowding in the inductor metal. A model method embedded with new explanation of current crowding is proposed and its applicability in differential inductor and balun is validated. This study leads to a robust optimization routine to improve inductor performance without any addition technology cost and development.<br>Ph.D.<br>School of Electrical Engineering and Computer Science<br>Engineering and Computer Science<br>Electrical Engineering

Magnetoelectric (ME) effect is defined as the change in dielectric polarization (P) of a material under an applied magnetic field (H) or an induced magnetization (M) under an external electric field (E). ME materials have attracted number of investigators due to their potential for improving applications such as magnetic field sensors, filters, transformers, memory devices and energy harvesters. It has been shown both experimentally and theoretically that the composite structures consisting of piezoelectric and magnetostrictive phases possess stronger ME coupling in comparison to that of single phase materials. Giant magnetoelectric effect has been reported in variety of composites consisting of bulk-sized ME composites and thin film ME nanostructures. In this dissertation, novel ME composite systems are proposed, synthesized and characterized in both bulk and thin films to address the existing challenges in meeting the needs of practical applications. Two applications were the focused upon in this study, tunable transformer and dual phase energy harvester, where requirements can be summarized as: high ME coefficient under both on-resonance and off-resonance conditions, broad bandwidth, and low applied DC bias. In the first chapter, three challenges related to the conventional ME behavior in bulk ME composites have been addressed (1) The optimized ME coefficient can be achieved without external DC magnetic field by using a self-biased ME composite with a homogenous magnetostrictive material. The mechanism of such effect and its tunability are studied; (2) A near-flat ME response regardless of external magnetic field is obtained in a self-biased ME composite with geometry gradient structure; (3) By optimizing interfacial coupling with co-firing techniques, the ME coefficient can be dramatically enhanced. Theses co-fired ME laminates not only exhibit high coupling coefficient due to direct bonding, but also illustrate a self-biased effect due to the built-in stress during co-sintering process. These results present significant advancement toward the development of multifunctional ME devices since it eliminates the need for DC bias, expands the working bandwidth and enhances the ME voltage coefficient. Next, magnetoelectric nanocomposites were developed for understanding the nature of the growth of anisotropic thin film structures. In this chapter following aspects were addressed: (1) Controlled growth of nanostructures with well-defined morphology was obtained. Microstructure and surface morphology evolution of the piezoelectric BaTiO3 films was systematically analyzed. A growth model was proposed by considering the anisotropy of surface energy and the formation of twin lamellae structure within the frame work of Structure Zone Model (SZM) and Dynamic Scaling Theory (DST). In parallel to BaTiO3 films, well-ordered nanocomposite arrays [Pb1.1(Zr0.6Ti0.4)O3/CoFe2O4] with controlled grain orientation were developed and investigated by a novel hybrid deposition method. The influence of the pre-deposited template film orientation on the growth of ME composite array was studied. (2) PZT/CFO/PZT thick composite film and BTO/CFO thin film were synthesized using sol-gel deposition (SGD) and pulsed laser deposition (PLD) techniques, respectively. The HRTEM analysis revealed local microstructure at the interface of consecutive constituents. The interfacial property variation of these films was found to affect the coupling coefficient of corresponding ME nanocomposites. Subsequently, a novel complex three-dimensional ME composite with highly anisotropic structure was developed using a hybrid synthesis method. The influence of growth condition on the microstructure and property of the grown complex composites was studied. The film with highly anisotropic structure was found to possess tailored ferroelectric response indicating the promise of this synthesis method and microstructure. Based on the laminated ME composites, three types of ME tunable transformer designs were designed and fabricated. The goal was to develop a novel ME transformer with tunable performance (voltage gain and/or working resonance frequency) under applied DC magnetic field. Conventional ME transformers need either winding coil or large external magnetic field to achieve the tunable feature. Considering the high ME coupling of ME laminate, two ME transformers were developed by epoxy bonding Metglas with transversely/longitudinally poled piezoelectric ceramic transformer. The influence of different operation modes toward magnetoelectric tunability was analyzed. In addressing the concern of the epoxy bonding interface, a co-fired ME transformer with unique piezoelectric transformer/magnetostrictive layer/piezoelectric transformer trilayer structure was designed. The design and development strategy of thin film ME transformer was discussed to illustrate the potential for ME transformer miniaturization and on-chip integration. Lastly, motivated by the increasing demand of energy harvesting (EH) systems to support self-powered sensor nodes in structural health monitoring system, a magnetoelectric composite based energy harvester was developed. The development and design concept of the magnetoelectric energy harvester was systematically discussed. In particular, the first dual-phase self-biased ME energy harvester was designed which can simultaneously harness both vibration and stray magnetic field (Hac) in the absence of DC magnetic field. Strain distribution of the EH was simulated using the finite element model (FEM) at the first three resonance frequencies. Additionally, the potential of transferring this simple EH structure into MEMS scalable components was mentioned. These results provide significant advancement toward high energy density multimode energy harvesting system.<br>Ph. D.

In this work the investigation on fully integrated systems providing on-chip galvanic isolation is presented, which exploits a silicon technology by STMicroelectronics. This research is mainly motivated by the higher level of integration that is demanded to the next generation of power converters and general applications featuring galvanic isolation. State-of the art implementations rely on complex post-processed passive devices to implement isolated power transfer within multi-die system in packages. In this work, two silicon implementations are mainly discussed, i.e. a step-up power transfer system and the ASK data receivers of a data/power transfer system. They achieve up to 980 mW output power with 29.6% efficiency and up to 40 Mbps with 5% modulation index, respectively, thus showing enhanced performance with respect to the state-of-the-art. Each system requires only two silicon chips to implement both galvanic isolation and power transfer, thus achieving the highest possible level of integration for a pure silicon technology.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2005.<br>Smith, Mark, Committee Member ; DeWeerth, Steve, Committee Member ; Jackson, Joel, Committee Member ; David Anderson, Committee Member ; Hasler, Paul, Committee Chair. Includes bibliographical references.

CMOS imagers are replacing CCD imagers in many applications and will continue to make new applications possible. CMOS imaging offers lower cost implementations on standard CMOS processes which allow for mixed signal processing on-chip. A system-on-a-chip approach offers the ability to perform complex algorithms faster, in less space, and with lower power and noise. Our transform imager is an implementation of a mixed focal plane and peripheral computation imager which allows high fill factor with high computational rates at low power. However, in order to use the technology effectively a need to verify and further understand the behavior and of the pixel elements in this transform imager was needed. This thesis presents a study of the pixel elements and mismatches and errors in the pixel array of this imager. From there, a discussion about removing offsets and an implementation of a circuit to remove the largest offsets is shown. To further enhance performance, initial work to develop light adaptive readout circuits is presented. Finally, an overview is given of a newly designed one-megapixel transform imager with many design improvements.

Un procédé de dépôt CVD à l’air libre, utilisant une torche micro-onde à injection axiale (TIA), a été développé pour le dépôt de films organosiliciés sur substrats de silicium monocristallins. Les effets et interactions de plusieurs paramètres de réglages de la TIA sur les propriétés physico-chimiques des films ont été déterminés par la mise en oeuvre d’un plan d’expériences de Rechtschaffner. L’analyse des résultats a permis d’établir des modèles expérimentaux ou « fonctions de transfert » liant les variables de dépôt aux propriétés des films. Suite aux analyses mathématique, graphique puis statistique des résultats du plan, complétées par la vérification expérimentale des modèles, plusieurs points d’intérêt particuliers – interactions, corrélation inter-réponses – ont été discutés. Les résultats dégagés ont mis en exergue une influence considérable de la température de surface du substrat. Par la suite, l’effet de cette température de surface sur les propriétés structurales et microstructurales des dépôts a été étudié. Pour ce faire, une analyse minutieuse des bandes associées aux vibrations des liaisons Si-O et –OH a été mis en oeuvre, notamment par un travail de décomposition spectral de FTIR. Ainsi, des informations sur l’organisation atomique dans le volume du matériau, notamment sur la conformation des liaisons Si-O-Si (angle et disparité angulaire) et sur la stoechiométrie ont été extraites. A plus grande échelle, des indications sur la densité, la porosité, et les contraintes au sein des films ont également été obtenues. Les résultats rapportés ont été utilisés pour expliciter les mécanismes de croissance du matériau. La caractérisation du jet plasma par spectroscopie d’émission optique a permis d’extraire des températures de gaz et d’appuyer les hypothèses émises. Enfin, la construction d’un nanocapteur à lecture en fluorescence à partir de nanostructures siliciées auto-organisées sur des substrats de Si(100) et Si(100)/Pt patternés par nanoindentation puis fonctionnalisées par chimie-click a été initiée<br>A new open air CVD process assisted by a microwave axial injection torch (TIA) has been developed for the deposition of organosilicon coatings on monocristalline silicon substrates. Both main effects of deposition parameters and first-order interactions on the physical &amp; chemical properties of the films have been investigated from a Rechtschaffner design of experiments (DOE). “Response equations” relating the responses with the deposition variables have been obtained. After the mathematical, graphical and statistical analysis of the results, several correlations settings/responses and response/response have been discussed and possible mechanisms that contribute to these relations have been suggested. These results have demonstrated that the substrate temperature plays a major role on the responses. Therafter the effects of the substrate temperature on the structural and microstructural properties of the coatings have been studied more in detail. That way, a thorough FTIR spectroscopy study has been performed through the deconvolution of the IR-absorption spectral curves into elementary profiles. This works has allowed to determinate the kind and the contribution of structural components and estimate the structural arrangement of the constituent atoms. In addition, results have been used to explicit growth mechanisms of the coatings. OES characterization of the plasma has corroborated the emitted assumptions. Finally we have reported on the first steps of a lab-on-chip building through the clickchemistry functionalization of self-organized networked SiOxHyCz nano-islands on Si(100) and Pt/Si(100) substrates patterned by nano-indentation

Les travaux portent sur les multiplexeurs optiques fonctionnant à mi-IR pour la source à large bande dans l'application de détection de gaz. Deux configurations ont été étudiées: réseau de guides d'onde (AWG) et réseau concave planaire (PCG). Premièrement, le principe du fonctionnement a été compris afin de développer une solution analytique pour le champ de sortie en utilisant une approximation gaussienne du champ et de l'optique de Fourier. Ensuite, un outil de simulation semi-analytique de la réponse spectrale pour les deux configurations de multiplexeur a été développé dans MATLAB. La distribution normale des erreurs de phase a été introduite dans le modèle semi-analytique AWG, ce qui nous a permis d'étudier la corrélation entre l'écart-type des erreurs de phase et le niveau de diaphonie de la réponse spectrale AWG. AWG à 5,65 μm a été fabriqué à partir de la technologie SiGe / Si à l'aide de l'outil MATLAB pour le calcul des paramètres de conception et de l'outil P.Labeye pour le calcul de la géométrie AWG. Les dispositifs avec des paramètres légèrement variables ont été caractérisés: AWG1 avec guides d'ondes de 4,6 μm et MMI de 9 μm; AWG2 avec guides d'ondes de 4,6 μm et MMI de 11 μm; AWG3 avec guides d'ondes de 4,8 μm et MMI de 9 μm. Des mesures des dispositifs sur la puce 36 (centre de la plaquette) et sur la puce 32 (côté de la plaquette) ont été effectuées et analysées. Les mesures de température de AWG2 et AWG3 (puce 32 et puce 36) aux points cinq points de température ont montré une dépendance linéaire du déplacement spectral avec la température qui a une bonne corrélation avec les prédictions de simulation<br>The work focuses on optical multiplexers operating in mid-IR for broadband source in gas sensing application. Two configurations were studies – arrayed waveguide grating (AWG) and planar concave grating (PCG). First, principle of operation was understood in order to develop analytical solution for output field using Gaussian approximation of the field and Fourier Optics. Then, semi-analytical simulation tool of the spectral response for both multiplexer configurations was developed in MATLAB. Normal distribution of phase errors was introduced to semi-analytical AWG model, which allowed us to study the correlation between standard deviation of phase errors and the level of crosstalk of AWG spectral response. AWG at 5.65 µm was fabricated based on SiGe/Si technology using the MATLAB tool for design parameters calculation and P.Labeye’s tool for AWG geometry calculation. Devices with slightly varying parameters were characterized: AWG1 with 4.6 µm waveguides and 9µm MMI; AWG2 with 4.6 µm waveguides and 11µm MMI; AWG3 with 4.8 µm waveguides and 9µm MMI. Measurements of devices on chip 36 (center of the wafer) and chip 32 (side of the wafer) were performed and analyzed. Temperature measurements of AWG2 and AWG3 (chip 32 and chip 36) at points five temperature points showed linear dependence of spectral shift with the temperature which has a good correlation with simulation predictions

碩士<br>國立臺灣科技大學<br>電子工程系<br>97<br>In the thesis, the proposed RF receiver front-end circuit for ultra-wideband (UWB) systems operating in 3.1-8.0 GHz frequency range is presented. The proposed RF front-end consists of low-noise amplifier (LNA), passive balun and double-balance mixer and is fabricated in a TSMC 0.18-μm CMOS process with 1.8 V supply voltage. The LNA employs three stages. The first stage uses the inverting technique embedding the symmetric planar transformer to achieve the wideband matching and less chip area. The secondary stage uses the cascode structure to eliminate the Miller effect and improve the isolation. The third stage is mostly used to match the following stage. Using the passive balun can reduce the power dissipation. The double-balance mixer uses the current-bleeding to lift the conversion gain and improve the linearity. The measured results show a maximum power gain of 30.32 dB, a minimum noise figure (NF) of 4.79 dB, and an input return loss (S11) less than -15.3 dB over the whole frequency range. This circuit also achieves an input-referred third-order intercept point (IIP3) of -21.4dBm. The isolations of LO to RF and LO to IF are less than -57 dB and -27.8, respectively. The chip area including pads is only 0.984 mm2 and power dissipation of 36.88mW.

碩士<br>國立高雄師範大學<br>電子工程學系<br>103<br>In this thesis, several radio-frequency (RF) circuits with transformers for the applications in Worldwide Interoperability for Microwave Access (WiMAX) and Wi-Fi are presented. Designed circuits are divided into two parts. The first part includes two mixers circuits using transformers to transform a single-ended signal into two differential signals. One mixer uses a transformer to transform a single-ended RF input into two differential signals and has a wide operation frequency bandwidth. The other mixer uses two transformers to transform a single-ended RF input and a single-end LO input into two differential signals, respectively. In the second part, a transformer is used to switch operation frequency band of dual-band low-noise amplifier (LNA). At first, one circuit using two discrete inductors to implement a dual-band LNA is presented. Then, the other circuit using two concentric switching inductors to implement a dual-band LNA is presented. The structure of the concentric switching inductors is a center-tapped self-coupling transformer. Finally, circuit performances of the two low-noise amplifiers are listed and compared. In the mixer I, a mixer uses a transformer to transfer a single-end RF input signal into two differential signals and operates over a wide frequency bandwidth. The transformer together with extra inductors and capacitors implements a broad-bandwidth impedance matching at the input port and generate two differential input signals into the mixer. In the circuit, the input impedance matching is improved and the conversion gain is enhanced as compared to the chip presented previously by our laboratory. The circuit operates at the frequency band around 2.3 GHz. The conversion gain is 10.05 dB. The power consumption is 2.88 mW. In the mixer II, a mixer uses two center-tapped transformers to transfer a single-end RF input into two differential signals and a single-end LO input into two differential signals, respectively. One transformer together with extra inductors and capacitors implements a broad-bandwidth impedance matching at the RF input port and generate two differential input signals into the mixer. At the LO port, the other transformer is also used to generate two differential LO signals into the mixer. The circuit operates at the frequency band around 2.3 GHz. The conversion gain is 10.81 dB. The power consumption is 3.52 mW. In the LNA I, a dual-band LNA using two discrete inductors to implement a switching-inductor structure is presented. A p-type MOSFET in parallel with one inductor in the switching-inductor structure is used to switch the equivalent inductance of switching-inductor structure and hence the LNA can operate at one of two operation frequency bands. The circuit operates at the frequency band around 2.4 GHz or 5.8 GHz. The gains are 10.97 dB and 7.85 dB, respectively. The power consumption is 11.39 mW and 11.46 mW. In the LNA II, a dual-band LNA using a concentric tapped self-coupling transformer, which is used to replace the two discrete inductors in the LNA I, is presented. The circuit operates at the frequency band around 2.4 GHz or 5.8 GHz. The gains are 14.03 dB and 8.23 dB, respectively. The power consumption is 10.59 mW and 10.56 mW, respectively. In this thesis, the Advance Design System(ADS) is used to simulate and analyze the circuit performance. The circuit is based on the TSMC 0.18 μm CMOS process and the related device models. The chips is taped out and fabricated by applying to CIC.

abstract: Isolated DC/DC converters are used to provide electrical isolation between two supply domain systems. A fully integrated isolated DC/DC converter having no board-level components and fabricated using standard integrated circuits (IC) process is highly desirable in order to increase the system reliability and reduce costs. The isolation between the low-voltage side and high-voltage side of the converter is realized by a transformer that transfers energy while blocking the DC loop. The resonant mode power oscillator is used to enable high efficiency power transfer. The on-chip transformer is expected to have high coil inductance, high quality factors and high coupling coefficient to reduce the loss in the oscillation. The performance of a transformer is highly dependent on the vertical structure, horizontal geometry and other indispensable structures that make it compatible with the IC process such as metal fills and patterned ground shield (PGS). With the help of three-dimensional (3-D) electro-magnetic (EM) simulation software, the 3-D transformer model is simulated and the simulation result is got with high accuracy. In this thesis an on-chip transformer for a fully integrated DC/DC converter using standard IC process is developed. Different types of transformers are modeled and simulated in HFSS. The performances are compared to select the optimum design. The effects of the additional structures including PGS and metal fills are also simulated. The transformer is tested with a network analyzer and the testing results show a good consistency with the simulation results when taking the chip traces, printed circuit board (PCB) traces, bond wires and SMA connectors into account.<br>Dissertation/Thesis<br>Masters Thesis Electrical Engineering 2014

碩士<br>國立勤益科技大學<br>電子工程系<br>106<br>This paper studies various coil winding methods for high frequency transformer. Transformers are essential elements in the electric power systems and power electronic circuits. In this paper, we study nine different winding types for coil of high frequency transformer. The parameters including inductance, leakage inductance, impedance, and Q value are analyzed. According to the experimental results, sandwich Z type among nine winding methods is with better electrical performance. In addition, the conception of sandwich-Z type is used to realize the chip magnetic coupling circuit in the integrated circuits. By using TSMC CMOS 90-nm process, the two ports electromagnetic coupling circuit is realized in four types, namely, (1) simple stacked inductor, (2) interleaved stacked inductor, (3) sandwich Z-1 stacked inductor, and (4) sandwich Z-2 stacked inductor. The National Applied Research Laboratories, National Chip Implementation Center (CIC) provide the simulation tool: ADS electromagnetic simulator. The chip layouts of four types have been achieved. The characteristics of the four type structures are verified by using ADS. The chip coupled circuits operated in frequencies of 10 k ~ 10 GHz are investigated. The simulation results show that the sandwich Z stacked type is with better in coupling coefficient of k value.

碩士<br>國立交通大學<br>電信工程研究所<br>107<br>This thesis consists of two parts, the first part is GaN Power Amplifiers on Si-Substrate Using Load-Pull Design, and the second part is Flip-Chip SiGe HBT Power Amplifiers Using the GIPD Parallel- Series-Combining Transformer. In the first part, we use load-pull method design two stage GaN power amplifier on Si-Substrate. And we also use mismatch power penalty to check whether the first stage would pull all of the power of the second stage. We implemented some power amplifiers with critical bands under 6 GHz. In the second part, we use flip-chip technique instead of bondwires to design SiGe HBT power amplifiers with GIPD parallel-series- combining transformer in order to reduce uncertainty. We use bondwires and flip-chip to implement two kinds of SiGe HBT power amplifier using the GIPD parallel-series- combining transformer.

碩士<br>國立成功大學<br>電機工程學系<br>89<br>This thesis analyzes the characteristics of on-chip interleaved spiral transformers with different numbers of turns and inner diameters for each spiral inductor. These transformers have been fabricated using a CMOS technology with six metal layers. The results show that the transformer with highest trace length can have highest magnetic coupling coefficient approaching 0.8, maximum quality factor about 5.7. The safe resonance frequency, 6.7GHz, which makes the application of integrated interleaved transformers in RFICs possible. Moreover, the temperature-effect have been included to characterize the behavior of spiral transformers over the temperature range from —40℃ to 150℃. To facilitate their applications in the RFIC design, a simple but acceptable interleaved transformer model is presented. The simulation results show the good fit to the measured results below 3GHz, although the proximity effect and the loss due to eddy current induced in the substrate are not considered. The model is then exploited in a mixer circuit, and the simulation result proves the application of this model for RFIC designs.

碩士<br>國立清華大學<br>電機工程學系<br>100<br>With the rapid growing design of RF circuit and communication integrated circuit, researches in interconnects, on-chip spiral inductors, and transformers become more and more important. Traditionally, designers of on-chip spiral inductors and transformers almost extract S-parameter by measurement or electromagnetic simulation software tools. They then use S-parameters to analyze or convert S-parameters to RLGCK model. So we think it is important to provide a designer a convenient system of synthesis and analysis. This thesis also provides a GUI called AutoHenry to let users use the method easily and quickly. This is a tool which can synthesize interconnects, on-chip spiral inductors and on-chip transformers. AutoHenry also has a large number of simulations. AutoHenry can automatically produce output files which provide all RLGCK parameters. AutoHenry can construct interconnects, on-chip spiral inductors and on-chip transformers model, and it can also construct these devices for any process. AutoHenry can help designers to synthesize desirable on-chip spiral inductors and on-chip transformers. AutoHenry is more than two times faster than electromagnetic simulation software. Because AutoHenry can automatic simulation and a large number of sweeping, user can reduce the repeat design and save a lot of time. This thesis proposes frequency-domain and time-domain methods to analyze the on-chip passive device parameters as on-chip spiral inductors and transformers. The frequency-domain methods are S2-function and S4-function. S2-function can convert on-chip spiral inductors’s S-parameters to the RLGCK parameters of modeled circuitry, and S4-function uses on on-chip transformers. The RLGCK parameters can provide designers insight of the physical characteristic of devices and modeling. The time-domain methods provide designers a different way to get S-parameters by directly extracting time domain RLGCK parameters of the device, and then use HSPICE to output S-parameters. The accuracy of our methods can be accepted by a lot of experiments. We also find the lumped model of on-chip spiral inductors and transformers, which input HSPICE have enormous errors. The errors are larger at high frequency especially. So we propose using distributed model to simulate which are shown in Fig. 3-6 and Fig. 3-7. The Fig. 3-8 to Fig. 3-11 are shown that we must cut device model into one hundred segments and the results would be accurate, otherwise the error have between 15% and seventeen times. This thesis provides 2-port and 4-port results to prove our methods which can apply to 4-port passive devices. We use commercial electromagnetic simulation software as HFSS(3D), ADS(2.5D) and IE3D(2.5D) to compare and verify our methods. We find that converting S-parameters to device’s modeling parameters are not easy after extracting S-parameters by these simulation software tools. Moreover, these simulation software tools are not accurate for passive devices of small dimensions. Hence our methods and AutoHenry can provide designs to solve it.

碩士<br>國立成功大學<br>電機工程學系碩博士班<br>96<br>The paper mainly presents: 1) the novel on-chip transformer modeling and discussion with extracting the parameters of the transformer, 2) 3,168-MHz QVCO design for UWB RF synthesizer application. In the aspect of the transformer, the element generally is applied to filters, balun, impedance matching, and impedance transformer. And then in recently, the papers whose contents are that put the passive element in using feedback circuits are presented gradually. The technique possesses the advantages of low voltage and low power consumption. If we can apply transformers to the wireless communication network system or other integrated system, it will improve the battery lifetime. In this text, we design several new transformers, and utilize the simulation software to simulate the properties of the transformers, as well as make the elements be applied inside 3~5GHz. In the future, we will make use of the elements to design a switch-able voltage-controlled oscillator, and the main switching frequency is 3.6GHz/4.8GHz. Further, utilize the divide-by-two circuits reducing the half frequency to achieve the switching bands of WLAN/GSM (Wireless Local Area Networks, WLAN; Global System for Mobile Communications, GSM); another main key of the paper is that discussing the relation between the transformer and Silicon substrate effect, and use simulation software to build up the novel modeling, as well as extract the parameters of each element. According to a frequency plan, we propose a novel RF frequency synthesizer for ultra-wide band multi-band OFDM (UWB MB-OFDM System) applications. The main concerns of the frequency synthesizer include: Supply the carrier frequencies of the fourteen frequency bands. Does it have high integrated? How many elements of circuits in the system? Could the system reduce cost and power consumption? Therefore, in order to fit the new frequency plan, achieve the performance of having low phase noise and low power consumption, so we design a 3,168-MHz QVCO whose topology is injection-locked frequency divider. Relying on injecting 6,336-MHz oscillation signal into the common mode of the dividers to enhance the second harmonic signal, and achieve locking oscillation by the positive feedback of the divider topology, finally it results the function of the dividing frequency and has the quadrature signal outputs. Because the topology is simple, has lower power consumption, and possesses better performance, we adopt it to integrate the VCO and divide-by- two circuit, so that reaching a low phase noise and low power consumption goal. The paper mainly has following creativity: 1) Discuss the relation between the on-chip transformer and Silicon substrate effect, and build up the novel modeling, as well as extract the parameters of each element. 2) Design a 3,168-MHz QVCO which is applied to new RF frequency synthesizer.

碩士<br>中原大學<br>資訊工程研究所<br>91<br>The Research is using digital signal processing chip TMS320C6711 to develop real time speech recognition. The fast signal identification result is achieved by means of the extraction of feature parameters of the signal and the establishment of a neural network. There are two major topics about this research. The first part is using wavelet packed method to decompose original signal. Thus, use multi-resolution space to be wavelet packet base, and then apply the Hilbert transform can get representative pattern feature parameters of each sample classification individually. The second part is using each of feature parameters to train in neural network, and then the automatic identification task is implemented. Finally, the two parts are integrated to perform real-time speech recognition system. An evaluation will execute to demonstrate the effective performance of this system. The system is embedded in a digital signal processing chip TMS320C6711 take advantage of the high efficiency of performance of the DSP, an easy use, fast and accuracy real-time DSP based speech signal processor system will be established.

碩士<br>國立交通大學<br>電子工程學系 電子研究所<br>101<br>The global population of people over the age of 65 is predicted to more than double, from 375 million in 1990 to 761 million by 2025. Healthcare problems relating to the aging population will become a serious social issue. Furthermore, because of the shortage of medical personnel, hospitals will be unable to afford the necessary medical interventions. Therefore, innovative health-care systems with high integrativity have become an important topic of research in recent years. This thesis presents a bio-sound signal processing System-on-Chip (SoC) with an on-board improved Hilbert-Huang transform (HHT) processor. This processor has proven to be an adaptive and efficient method for nonlinear and nonstationary signal analysis. However, the HHT method involves a large number of complicated and iterative computations. It is necessary to use VLSI technology to implement this proposed system with high integrativity and real-time applications. The proposed improved HHT SoC design consists of a data pre-processing unit to suppress noise and the aliasing effect. An intelligent memory management unit was developed to solve the problem of frequently reading and writing data from and to the memory, and a system control unit is used to effectively accelerate the performance of the overall system. The heart sound signals could be decomposed into a collection of Intrinsic Mode Function (IMFs) through an EEMD engine. The Hilbert spectrum analysis of each corresponding IMF can be efficiently derived through an improved IFNDQ engine based on the direct quadrature method. To overcome the noise and aliasing effect caused by nonstationary signals, many innovative and effective modules were developed in this thesis. The proposed HHT SoC design could be implemented in hardware with limited resources and fabricated under TSMC 90 nm CMOS technology.

碩士<br>國立臺北科技大學<br>電子工程系研究所<br>103<br>In recent years, the development of technology grows very fast. Camera focus system focuses on object not only once. And you can refocus image after you take the first shot. Light Field Camera is the product that you can adjust the focal plane to make clear objects with blur scene. In this research, we take two parts“Object Segmentation” and “Blur Image”to simulate clear region with blur scene at any segmented object. We proposed a Haar Discrete Wavelet Transform to reconstruct the blur images using color image in this method. We get different characteristic sub-band images through DWT(Discrete Wavelet Transform) decomposition. Each sub-band contains different energy and edge type. Image is composited to many sub-bands by doing high order discrete wavelet transform and makes more conbination with these subbands. Each suband’s energy can be controlled by weight assignment. The blur image is reconstructed using IDWT(Inverse Discrete Wavelet Transform) with details. We can find a set of coefficients to control image from blur to clear in our simulation. We can control the blur amount through the sets of coefficients. We design the hardware architecture using digital chip flow to make real digital chip. We implement the discrete wavelet transform part. We enter the code that tells which subband need to be decomposited by discrete wavelet transform. Finally, chip outputs the result of decomposition result.

碩士<br>國立臺灣科技大學<br>電機工程系<br>106<br>Because photovoltaic systems have gradually emerged in recent years, they make the use of DC power in the power system more and more extensive. DC arc faults on DC lines have gradually become seriously. The arcing accompanied with high thermal energy and spark is easy to cause serious fires. USA and Taiwan have developed regulations that PV system shall include a DC arc fault circuit protection device. In this thesis, it is to establish an experiment platform to collect line current data under normal operation and series arc fault. Experiments include resistive load and inverter operating on different conditions. First of all, it is to use the discrete wavelet transform (DWT) to obtain the time-frequency domain characteristics of line current waveforms. Then the high-frequency components are used to calculate the cumulative energy for each measurement period. It then train a suitable detection method by using decision tree. At last, the detection method is applied to the FPGA preliminarily. The decision tree detecting method are applied to experiment data and the results are compared to commercial PV AFD. In this thesis, the proposed method can correctly recognize normal operation and series arc fault. If the detecting method in this thesis can be combined with a smart meter or other detection devices in the future, it could effectively improve the power safety.

Thesis (Ph.D.)--University of Alberta, 2009.<br>Title from PDF file main screen (viewed on Apr. 1, 2010). A thesis submitted to the Faculty of Graduate Studies and Research in partial fulfillment of the requirements for the degree of Doctor of Philosophy, Department of Electrical and Computer Engineering, University of Alberta. Includes bibliographical references.