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Journal articles on the topic 'On-off current'

Author: Grafiati

Published: 4 June 2025

Last updated: 23 June 2025

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1

Kaharudin, K. K. E., F. Salehuddin, A. S. M. Zain, Ameer F. Roslan, and I. Ahmad. "Work function variations on electrostatic and RF performances of JLSDGM Device." Indonesian Journal of Electrical Engineering and Computer Science 23, no. 1 (2021): 150–61. https://doi.org/10.11591/ijeecs.v23.i1.pp150-161.

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This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (I<sub>ON</sub>), off-state current (I<sub>OFF</sub>), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (P<sub>dyn</sub>), cut-off frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>) are intensively investigated in conjunction with WF variations.

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2

Hakkee, Jung, and Kim Byungon. "Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 5 (2021): 3882–89. https://doi.org/10.11591/ijece.v11i5.pp3882-3889.

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The variation of the on-off current ratio is investigated when the asymmetrical junctionless double gate MOSFET is fabricated as a SiO 2 /highk dielectric stacked gate oxide. The high dielectric materials have the advantage of reducing the short channel effect, but the rise of gate parasitic current due to the reduction of the band offset and the poor interface property with silicon has become a problem. To overcome this disadvantage, a stacked oxide film is used. The potential distributions are obtained from the Poission equation, and the threshold voltage is calculated from the second derivative method to obtain the on-current. As a result, this model agrees with the results from other papers. The on-off current ratio increases as the permittivity of the high dielectric material increases, but that is saturated at the relative permittivity of 20 or more. The on-off current ratio is in proportion to the arithmetic average of the upper and lower high dielectric material thicknesses. The on-off current ratio of 10 4 or less is shown for SiO 2 , but the on-off current ratio for TiO 2 (k=80) increases to 10 7 or more.

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3

Nisha, Patel, Saloda M.A., S. Khidiya M., L. Salvi B., Jindal S., and Patel Narendra. "To Study the Effect of Process Parameters on Surface Roughness during Electric Discharge Machining of Al6061t6 Work Piece with Graphite Electrode." Journal of Scientific and Engineering Research 8, no. 5 (2021): 7–15. https://doi.org/10.5281/zenodo.10589705.

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<strong>Abstract</strong> In most industries, Manufacturing with machining plays a greater role because the formation of  parts need  surface finish during the machining process. The non-conventional machining processes are only method to machine hard materials. Electric Discharge Machining (EDM) is one of such processes used for removing the material in hard materials. It is non tradition by means of thermal energy instead of cutting force. In this study, experiments are carried out to find the optimum values of the parameters for addressing the issue of surface roughness in aluminium parts produced with graphite electrode in EDM. The experiments are carried out on ZNC-250 die-sink electric discharge machine for drilling of Aluminium T061 work piece using Graphite rod as electrode. In order to understand the response of the system, experiments were conduct out at three levels of Current (I), Pulse-on Time (T<sub>on</sub>), Pulse-off Time (T<sub>off</sub>) and Servo Voltage (V). From the measured value of Surface Roughness (SR), it is found that the surface finish deteriorates with increase in current. Current is found to be the highest effect factor which has highest upshot on the Surface Roughness followed by pulse off time and last by pulse on time.

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4

Kim, Kang-Sik. "Current Issues on the Time-off System." Ordo Economics Journal 23, no. 4 (2020): 35–52. http://dx.doi.org/10.20436/oej.23.4.035.

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5

Nakamura, Toru, Ayako Tanaka, Youichi Maekawa, et al. "On the Westward Current off Cape Shionomisaki." Oceanography in Japan 17, no. 5 (2008): 319–35. https://doi.org/10.5928/kaiyou.17.5_319.

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6

Lattouf, Omar M., and Kumari N. Adams. "Current Readings on Off-Pump Coronary Artery Bypass." Seminars in Thoracic and Cardiovascular Surgery 25, no. 3 (2013): 228–36. http://dx.doi.org/10.1053/j.semtcvs.2013.09.004.

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7

Xu, Zhe, Jinyan Wang, Yong Cai, et al. "300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio." Electronics Letters 50, no. 4 (2014): 315–16. http://dx.doi.org/10.1049/el.2013.3928.

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8

Ehrenman, Gayle. "Current From Currents." Mechanical Engineering 125, no. 02 (2003): 40–41. http://dx.doi.org/10.1115/1.2003-feb-2.

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This article discusses that in the quest for renewable energy, the oceans’ tides and flow have gone largely untapped. Companies in the United Kingdom and Canada are trying to harvest the power of sea current through new application of an old technology: turbines. IT Power is using technology from its spin-off company, Marine Current Turbines, also in Hampshire. The technology consists of a pair of axial flow rotors that are roughly 50 to 65 feet in diameter. Each drives a generator via a gearbox, much like a wind turbine. Blue Energy Canada is also working the currents. Its approach differs from that of IT Power in two significant ways: orientation of the turbine blades and their arrangement. A study conducted in 2001 by Triton Consultants, based in Vancouver, BC, on behalf of BC Hydro (one of the largest electrical utilities in Canada), found that the cost to develop a current turbine site is rather high, but the cost of annual power generation would be low. The study considered a site at the Discovery Passage in British Columbia, which it speculated would run 7941-MW Marine Current Turbines spread over roughly 3922 acres.

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9

Panda, S., S. Dash, S. K. Behera, and G. P. Mishra. "Delta-doped tunnel FET (D-TFET) to improve current ratio ( $$I_\mathrm{ON}/I_\mathrm{OFF}$$ I ON / I OFF ) and ON-current performance." Journal of Computational Electronics 15, no. 3 (2016): 857–64. http://dx.doi.org/10.1007/s10825-016-0860-z.

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10

Yu-Syuan Lin, Yi-Wei Lain, and S. S. H. Hsu. "AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio." IEEE Electron Device Letters 31, no. 2 (2010): 102–4. http://dx.doi.org/10.1109/led.2009.2036576.

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11

Chiang, Oscar E., and Renato A. Quiñones. "Relationship between viral and prokaryotic abundance on the Bajo O’Higgins 1 Seamount (Humboldt Current System off Chile)." Scientia Marina 71, no. 1 (2007): 37–46. http://dx.doi.org/10.3989/scimar.2007.71n137.

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12

Muhammad, Farooq Saleem. "Temperature and Channel width Dependence of Novel Lateral Gate VJFET." International Journal of Engineering Works 3, no. 2 (2016): 1–5. https://doi.org/10.5281/zenodo.49365.

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2D numerical simulation of normally off vertical N-channel JFET with novel internal lateral gate configuration designed on a 9.4 ?m, 7 1015 cm?3 doped drift layer is presented. The study covers an interval of blocking voltages ranging from 600 V to 933 V for various temperatures and channel widths. The effect of elimination of vertical JFET gates and variation in channel width on the on-state/breakdown performance is carefully investigated. The device performance has been compared in terms of blocking voltages, specific on-state resistance and maximum output current density in the temperature range from room temperature up to 473 K. Normally-off operation with blocking voltage (Vbl) of 933 V is demonstrated for a gate voltage of -20 V. The goal of this work is to predict the performance of lateral gate VJFET configuration and have a deep insight into the relationship between the devices electrical/thermal characteristics and channel thickness. The detailed investigation reveals that lateral gate configuration offers less resistance to leakage current reducing the blocking capability of the device. Though, its excellent on state performance in terms of high saturation current (1.23A) and low on-resistance (3.6 m ?) makes this VJFET an excellent device for fast power switching applications.

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13

Vali, Mehran, Daryoosh Dideban, and Negin Moezi. "Silicene field effect transistor with high on/off current ratio and good current saturation." Journal of Computational Electronics 15, no. 1 (2015): 138–43. http://dx.doi.org/10.1007/s10825-015-0758-1.

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14

Vassilevski, Konstantin, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, and Anthony G. O'Neill. "4H-SiC Schottky Diodes with High On/Off Current Ratio." Materials Science Forum 389-393 (April 2002): 1145–48. http://dx.doi.org/10.4028/www.scientific.net/msf.389-393.1145.

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15

Deguchi, Tadayoshi, Toshikatsu Kikuchi, Manabu Arai, Kimiyoshi Yamasaki, and Takashi Egawa. "High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs." IEEE Electron Device Letters 33, no. 9 (2012): 1249–51. http://dx.doi.org/10.1109/led.2012.2204854.

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16

Agopian, Paula Ghedini Der, Márcio Dalla Valle Martino, Sebastião Gomes dos Santos Filho, et al. "Temperature impact on the tunnel fet off-state current components." Solid-State Electronics 78 (December 2012): 141–46. http://dx.doi.org/10.1016/j.sse.2012.05.053.

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17

King, J. R., S. E. Kruger, R. J. Groebner, et al. "Effect of scrape-off-layer current on reconstructed tokamak equilibrium." Physics of Plasmas 24, no. 1 (2017): 012504. http://dx.doi.org/10.1063/1.4972822.

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18

Chinn, C. R., and A. Picklesimer. "Off-shell and medium effects on the electromagnetic nucleon current." Il Nuovo Cimento A 105, no. 8 (1992): 1149–77. http://dx.doi.org/10.1007/bf02730873.

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19

Henriques, Miguel, Alberto G. Murta, and Henrique N. Cabral. "Melanonus zugmayeri Norman, 1930, captured off Portugal. A review of the current knowledge on this species." Scientia Marina 65, no. 1 (2001): 43–46. http://dx.doi.org/10.3989/scimar.2001.65n143.

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20

Han, Guoqi, and Nancy Chen. "Variability of Longshore Surface Current on the Shelf Edge and Continental Slope off the West Coast of Canada." Remote Sensing 14, no. 6 (2022): 1407. http://dx.doi.org/10.3390/rs14061407.

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The shelf-edge and continental slope current off the west coast of Canada has been monitored at a site off West Vancouver Island since 1985. However, observations at this site may not represent the characteristics of the shelf-edge and slope current off the entire west coast of Canada. Here, we use along-track satellite altimetry data over six transects to investigate the characteristics of the surface geostrophic currents over the shelf edge and continental slope off the west coast of Canada from 1992 to 2020. It is shown that along-track satellite altimetry is well suited for monitoring longshore and climatic variations of the near-surface shelf-edge and slope currents off the west coast of Canada. It is found that the surface current over the shelf edge and slope has different features from the south to the north. While the surface current is poleward in winter and equatorward in summer off South Vancouver Island, it is poleward year-round off the rest of the west coast of Canada. The seasonal current anomalies show longshore correlation significant at the 95% confidence level, except at the North Haida Gwaii transect. The first empirical orthogonal function mode of the seasonal current anomalies is correlated with the longshore wind anomalies both off South Vancouver Island and off Oregon. However, this first mode is not correlated with either the Niño 3.4 index or the Pacific Decadal Oscillation index, though they often show large episodic events during strong El Niño and La Niña years. Consistent with previous findings, the present study indicates that the surface currents over the shelf edge and continental slope off the west coast of Canada are related to regional and remote longshore wind forcing.

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21

Munna, M., P. Das, M. F. Huq, and I. Ahmed. "Study on the On/Off Ratio of the Cylindrical Surrounding Gate CNT Transistor Using Nonequlibrium Greens Function Approach." Journal of Scientific Research 7, no. 1-2 (2015): 11–21. http://dx.doi.org/10.3329/jsr.v7i1-2.19031.

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The effects of the nanotube diameter, channel length, gate dielectric constant and gate dielectric thickness on the on-off current ratio performance of cylindrical surrounding gate carbon nanotube transistors are studied using a ?-orbital tight binding simulation model. The focus is both on Schottky-barrier and the doped source-drain contact devices. The on current significantly improves with high-? gate dielectric, whereas off current decreases. The device on-off current ratio improves, from 6.33 × 105 to 1.5 × 106 for doped contact and from 0.61 × 104 to 1.22 × 104 for SB device with thinner gate oxide. Minimum leakage current increases with larger diameter tube but on-current has no significant improvement. I-V characteristics are independent of channel length when it is larger than 15 nm. Significant increase in off-current occurs due to scaling the channel length down to 10 nm but on-off ratio still exceeds 103. In all cases, on-off ratio is higher and the effect of scaling is more prominent for doped contact devices than SB contact devices.

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22

Snehal, Jose, Haridas Sneha, and V. B. |. Sonia Shaju Sivaprasad. "Automatic Light Turn On Off System." International Journal of Trend in Scientific Research and Development 3, no. 4 (2019): 160–62. https://doi.org/10.31142/ijtsrd23495.

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This project focus on a real time situation where we are wasting the electricity. Because of our carelessness the usage of current is increasing day by day. We are living in an era where so many peoples do not getting electricity properly. Electrical power is now the backbone of modern industrial society. Electricity is at the heart of many modern technologies, being used for electric power where electric current is used to energize equipment, electronics which deals with electrical circuits that involve active electrical components such as vacuum tubes, transistors, diodes and integrated circuits and associated passive interconnection technologies. In order to avoid the lack of electricity due to our carelessness we are implementing the new system that is known as AUTOMATIC TURN ON OFF SYSTEM. In this project, we are detecting the motion of a person or anything and turn off the electronic equipment's if there is no person. By this we can save the electricity. Snehal Jose | Sneha Haridas | Sivaprasad V B | Sonia Shaju "Automatic Light Turn On/Off System" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-4 , June 2019, URL: https://www.ijtsrd.com/papers/ijtsrd23495.pdf

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23

Yusoff, Abd Rashid Bin Mohd, Dietmar Schulz, Eikner Holz, Ying Song, and Saiful Anuar Shuib. "Temperature Dependence on Current Gain, On-to-Off Current Ratio, and Organic Magnetocurrent of Nonmagnetic Organic Transistors." IEEE Transactions on Electron Devices 58, no. 10 (2011): 3583–86. http://dx.doi.org/10.1109/ted.2011.2162242.

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24

Lou, Xuan, Rui Wang, and Yang Zhou. "Polymer Cut-Off Wall Quality Testing Based on Direct Current Response Measuring." Advanced Materials Research 838-841 (November 2013): 1715–18. http://dx.doi.org/10.4028/www.scientific.net/amr.838-841.1715.

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Polymer Cut-off wall is a new kind of anti-seepage work used in hydraulic and civil engineering. It is quite different from concrete cut-off wall in materials and sizes. Traditional quality testing methods such as elastic wave tomography, GPR and resistivity imaging are all not applicable in polymer cut-off wall quality testing. We design a new testing method based on DC potential measuring. We use electrodes to build underground electric field and measuring the change of potential near the wall to analysis the integrity of the wall. We finish a series of indoor model and some full-scale tests. The results prove that the method is effective and practicable in polymer cut-off wall quality testing.

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25

Unagami, T., and O. Kogure. "Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure." IEEE Transactions on Electron Devices 35, no. 11 (1988): 1986–89. http://dx.doi.org/10.1109/16.7414.

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26

Fediv, Y. I., and O. M. Sivakova. "FLEXIBLE ALTERNATING CURRENT TRANSMISSION SYSTEMS ON THE BASIS OF CURRENT CONVERTERS WITH TURN-OFF THYRISTORS." Praci Institutu elektrodinamiki Nacionalanoi akademii nauk Ukraini 2019, no. 52 (2019): 28–32. http://dx.doi.org/10.15407/publishing2019.52.028.

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27

Chen, Fred S. P., David Steele, and David Fedida. "Allosteric Effects of Permeating Cations on Gating Currents during K+ Channel Deactivation." Journal of General Physiology 110, no. 2 (1997): 87–100. http://dx.doi.org/10.1085/jgp.110.2.87.

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K+ channel gating currents are usually measured in the absence of permeating ions, when a common feature of channel closing is a rising phase of off-gating current and slow subsequent decay. Current models of gating invoke a concerted rearrangement of subunits just before the open state to explain this very slow charge return from opening potentials. We have measured gating currents from the voltage-gated K+ channel, Kv1.5, highly overexpressed in human embryonic kidney cells. In the presence of permeating K+ or Cs+, we show, by comparison with data obtained in the absence of permeant ions, that there is a rapid return of charge after depolarizations. Measurement of off-gating currents on repolarization before and after K+ dialysis from cells allowed a comparison of off-gating current amplitudes and time course in the same cells. Parallel experiments utilizing the low permeability of Cs+ through Kv1.5 revealed similar rapid charge return during measurements of off-gating currents at ECs. Such effects could not be reproduced in a nonconducting mutant (W472F) of Kv1.5, in which, by definition, ion permeation was macroscopically absent. This preservation of a fast kinetic structure of off-gating currents on return from potentials at which channels open suggests an allosteric modulation by permeant cations. This may arise from a direct action on a slow step late in the activation pathway, or via a retardation in the rate of C-type inactivation. The activation energy barrier for K+ channel closing is reduced, which may be important during repetitive action potential spiking where ion channels characteristically undergo continuous cyclical activation and deactivation.

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28

Kang, Ji-Seong, and Young-Hyun Moon. "Solid-State Fault Current Limiter based on Magnetic Turn off Principle." Journal of International Council on Electrical Engineering 4, no. 2 (2014): 95–101. http://dx.doi.org/10.5370/jicee.2014.4.2.095.

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29

Patel, Viral, Shinya Unai, Mario Gaudino, and Faisal Bakaeen. "Current Readings on Outcomes After Off-Pump Coronary Artery Bypass Grafting." Seminars in Thoracic and Cardiovascular Surgery 31, no. 4 (2019): 726–33. http://dx.doi.org/10.1053/j.semtcvs.2019.05.012.

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30

Garcia, J., G. Giruzzi, X. Litaudon, et al. "Impact of off-axis RF current drive on JET advanced scenarios." Nuclear Fusion 51, no. 7 (2011): 073019. http://dx.doi.org/10.1088/0029-5515/51/7/073019.

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31

Lu, Xiaoyan, Hui Li, and Wenwu Cao. "Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions." Journal of Applied Physics 112, no. 5 (2012): 054102. http://dx.doi.org/10.1063/1.4748051.

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32

Ravindran, Ajith, Abraham George, C. S. Praveen, and Nisha Kuruvilla. "Gate All Around Nanowire TFET with High ON/OFF Current Ratio." Materials Today: Proceedings 4, no. 9 (2017): 10637–42. http://dx.doi.org/10.1016/j.matpr.2017.06.434.

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33

López-Delgadillo, Edgar, Jose A. Díaz-Méndez, Miguel A. García-Andrade, Rubén Vázquez-Medina, and Marco A. Gurrola-Navarro. "Automatic On-Die Impedance Matching in Current Mode Off-Chip Signaling." Circuits, Systems, and Signal Processing 33, no. 11 (2014): 3331–48. http://dx.doi.org/10.1007/s00034-014-9821-6.

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34

Buznikov, N. A. "Influence of Bias Current on Off-Diagonal Magnetoimpedance in Composite Wires." Journal of Superconductivity and Novel Magnetism 31, no. 12 (2018): 4039–45. http://dx.doi.org/10.1007/s10948-018-4667-y.

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35

Sundaresan, Siddarth G., Eric Lieser, and Ranbir Singh. "Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications." Materials Science Forum 717-720 (May 2012): 1159–62. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1159.

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Silicon Carbide Anode Switched Thyristors (ASTs) overcome major limitations of conventional Si and SiC IGBT and GTO Thyristor solutions by providing robust, latch-up free turn-off at high currents, current saturation in the output characteristics, and a wide safe operating area (SOA) through series current controlled device turn-off. In this work, detailed static and switching characteristics of 6.5 kV-class SiC ASTs are reported, which include a low on-state voltage drop of 4 V at 100 A/cm2, slight positive temperature co-efficient of Von, current saturation at > 100 A Cathode currents and fast turn-on and turn-off times of 500 ns while switching 1300 V and 20 A.

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36

Cohen, Ethan D. "Interactions of Inhibition and Excitation in the Light-Evoked Currents of X Type Retinal Ganglion Cells." Journal of Neurophysiology 80, no. 6 (1998): 2975–90. http://dx.doi.org/10.1152/jn.1998.80.6.2975.

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Cohen, Ethan D. Interactions of inhibition and excitation in the light-evoked currents of X type retinal ganglion cells. J. Neurophysiol. 80: 2975–2990, 1998. The excitatory and inhibitory conductances driving the light-evoked currents (LECs) of cat and ferret on- and off-center X ganglion cells were examined in sliced and isolated retina preparations using center spot stimulation in tetrodotoxin (TTX)-containing Ringer. on-center X ganglion cells showed an increase in an excitatory conductance reversed positive to +20 mV during the spot stimulus. At spot offset, a transient inhibitory conductance was activated on many cells that reversed near E Cl. off-center X ganglion cells showed increases in a sustained inhibitory conductance that reversed near E Cl during spot stimulation. At spot offset, an excitatory conductance was activated that reversed positive to +20 mV. The light-evoked current kinetics of on- and off-center X cells to spot stimulation did not significantly differ in form from their Y cell counterparts in TTX Ringer. When inhibition was blocked, current-voltage relations of the light-evoked excitatory postsynaptic currents (EPSCs) of both on- and off-X cells were L-shaped and reversed near 0 mV. The EPSCs averaged between 300 and 500 pA at −80 mV. The metabotropic glutamate receptor agonist 2-amino-4-phosphonobutyric acid (APB), was used to block on-center bipolar cell function. The LECs of on-X ganglion cells were totally blocked in APB at all holding potentials. APB caused prominent reductions in the dark holding current and synaptic noise of on-X cells. In contrast, the LECs of off-X ganglion cells remained in APB. An increase in the dark holding current was observed. The excitatory amino acid receptor antagonist combination of d-amino-5-phosphono-pentanoic acid (d-AP5) and 2,3-dihydroxy-6-nitro-7-sulfamoyl-benzo-(F)-quinoxalinedione (NBQX) was used to block ionotropic glutamate receptor retinal neurotransmission. The LECs of all on-X ganglion cells were totally blocked, and their holding currents were reduced similar to the actions of APB. For off-X ganglion cells, the antagonist combination always blocked the excitatory current at light-off; however, in many cells, the inhibitory current at light-on remained. on-center X ganglion cells receive active excitation during center illumination, and a transient inhibition at light-off. In contrast off-center X ganglion cells experience a sustained active inhibition during center illumination, and a shorter increase in excitation at light-offset. Cone bipolar cells provide a resting level of glutamate release on X ganglion cells on which their light-evoked currents are superimposed.

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37

Kujiraoka, T., T. Saito, and J. Toyoda. "Analysis of synaptic inputs to on-off amacrine cells of the carp retina." Journal of General Physiology 92, no. 4 (1988): 475–87. http://dx.doi.org/10.1085/jgp.92.4.475.

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To elucidate the synaptic transmission between bipolar cells and amacrine cells, the effect of polarization of a bipolar cell on an amacrine cell was examined by simultaneous intracellular recordings from both cells in the isolated carp retina. When either an ON or OFF bipolar cell was depolarized by an extrinsic current step, an ON-OFF amacrine cell was transiently depolarized at the onset of the current but no sustained polarization during the current was detected. The current hyperpolarizing the OFF bipolar cell also produced the transient depolarization of the amacrine cell at the termination of the current. These responses had a latency of approximately 10 ms. The amplitude of the current-evoked responses changed gradually with current intensity within the range used in these experiments. They were affected by polarization of the amacrine cell membrane; the amplitude of the current-evoked responses as well as the light-evoked responses was increased when the amacrine cell membrane was hyperpolarized, while the amplitude was decreased when the cell was depolarized. These results confirm directly that ON-OFF amacrine cells receive excitatory inputs from both ON and OFF bipolar cells: the ON transient is due to inputs from ON bipolar cells, and the OFF transient to inputs from OFF bipolar cells. The steady polarization of bipolar cells is converted into transient signals during the synaptic process.

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38

Patil, Bhushan Prataprao, and Shah Paresh Jaychand Dr. "A REVIEW ON FAULT CLASSIFICATION METHODOLOGIES IN TRANSFORMER"." International Journal of Research and Analytical Reviews 6, no. 1 (2019): 449–57. https://doi.org/10.5281/zenodo.8434792.

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This paper presents a survey on different fault classification methodologies in transformer, when the transformer becomes operational, it experiences a magnetizing inrush current with a magnitude that can range from six to eight times the rated current. This can cause the differential relay to trigger incorrectly and cutting off the transformer's supply lines without need. To avoid deceptively tripping the differential relay and make sure the transformer is operating properly, it's critical to differentiate between inrush current and internal fault current. The second harmonic restraint relay is used by traditional protection systems to distinguish between the internal fault current and the inrush current. The scale and complexity of power systems are growing along with the energy demand, making rapid, stable, and dependable protection systems necessary to preserve crucial components like transformers. Thus, current research focuses on creating unique algorithms for precise separation between internal fault current and inrush current. This review study, which is meant to help researchers new to this topic, examines numerous methods used to distinguish between internal fault current and inrush current in transformers.

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39

CHOI, Y., N. I. CHO, and J. I. CHOE. "QUANTITATIVE STUDY OF SURFACE MORPHOLOGY BY ATOMIC FORCE MICROSCOPY." International Journal of Modern Physics B 16, no. 28n29 (2002): 4395–400. http://dx.doi.org/10.1142/s0217979202015480.

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Atomic force microscopy was applied to study the formation and growth mechanism of thin multilayers of chromium-molybdenum and chrome prepared by electro-pulse plating, respectively. The chromium-molybdenum and chrome layers were prepared using direct current density of 1.6 mA.mm -2 and pulse currents with on-off time from 5 to 2000 ms in the bath containing 300g l-1 of chromic acid and 75g l-1 ammonium molybdate, and 250g l-1 of chromic acid and 5g l-1 of sulfuric acid, respectively. The higher current density enhanced nucleation rate which resulted in refining grain size. The micro-hardness of the pulse plated chrome and chromium-molybdenum alloy layers increased with the duration of on-off time and pulse current density. The average surface roughness of chrome layer is increased with increasing on/off time ratio for a given peak current density and voltage because the growth and dissolution mainly occurs during on-time and off-time, respectively. However, the average surface roughness of chromium-molybdenum alloy layer is decreased with increasing on/off time ratio for a given peak current density and voltage because the alloying element in the layer.

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40

Ertel, E. A., M. M. Smith, M. D. Leibowitz, and C. J. Cohen. "Isolation of myocardial L-type calcium channel gating currents with the spider toxin omega-Aga-IIIA." Journal of General Physiology 103, no. 5 (1994): 731–53. http://dx.doi.org/10.1085/jgp.103.5.731.

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The peptide omega-agatoxin-IIIA (omega-Aga-IIIA) blocks ionic current through L-type Ca channels in guinea pig atrial cells without affecting the associated gating currents. omega-Aga-IIIA permits the study of L-type Ca channel ionic and gating currents under nearly identical ionic conditions. Under conditions that isolate L-type Ca channel currents, omega-Aga-IIIA blocks all ionic current during a test pulse and after repolarization. This block reveals intramembrane charge movements of equal magnitude and opposite sign at the beginning of the pulse (Q(on)) and after repolarization (Q(off)). Q(on) and Q(off) are suppressed by 1 microM felodipine, saturate with increasing test potential, and are insensitive to Cd. The decay of the transient current associated with Q(on) is composed of fast and slow exponential components. The slow component has a time constant similar to that for activation of L-type Ca channel ionic current, over a broad voltage range. The current associated with Q(off) decays monoexponentially and more slowly than ionic current. Similar charge movements are found in guinea pig tracheal myocytes, which lack Na channels and T-type Ca channels. The kinetic and pharmacological properties of Q(on) and Q(off) indicate that they reflect gating currents associated with L-type Ca channels. omega-Aga-IIIA has no effect on gating currents when ionic current is eliminated by stepping to the reversal potential for Ca or by Cd block. Gating currents constitute a significant component of total current when physiological concentrations of Ca are present and they obscure the activation and deactivation of L-type Ca channels. By using omega-Aga-IIIA, we resolve the entire time course of L-type Ca channel ionic and gating currents. We also show that L- and T-type Ca channel ionic currents can be accurately quantified by tail current analysis once gating currents are taken into account.

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41

Olanow, C. Warren, Werner Poewe, Olivier Rascol, and Fabrizio Stocchi. "From OFF to ON—Treating OFF Episodes in Parkinson’s Disease." Neurology 16, Suppl. 1 (2020): 2. http://dx.doi.org/10.17925/usn.2020.16.suppl.1.2.

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In Parkinson’s disease (PD), OFF episodes continue to present a serious burden for patients, and their effective management remains a substantial unmet clinical need. Understanding of the pathophysiology of OFF episodes has advanced in recent years, providing valuable insights for improved treatments. OFF episodes generally appear 3–5 years after starting levodopa treatment, but can begin much earlier. They are characterized by motor symptoms (including tremor, rigidity, slowness, incoordination, and weakness) and are almost always associated with some non-motor symptoms (including psychological symptoms, pain, urinary problems, swallowing difficulties, and shortness of breath). In PD, higher doses of levodopa are associated with increased risk of motor and non-motor complications, which are notable limitations for longterm therapy. Their occurrence is associated with intermittent levodopa delivery and consequent fluctuating plasma levels. These issues can be offset using lower levodopa doses where possible, incremental dose increases, and combinations of levodopa with other pharmacological agents. OFF episodes in PD can be caused by gastroparesis and/or by Helicobacter pylori infection, which delays delivery of levodopa. These issues can be addressed using new formulations for continuous intrajejunal administration. In addition, pen injector, intranasal, and inhaled dosing systems have been studied and may provide relief via non-intestinal routes. Other approaches include deep-brain stimulation, which is effective but is restricted by costs and potential adverse events. This report presents the highlights of a satellite symposium held at the 14th International Conference on Alzheimer’s & Parkinson’s Diseases (AD/PD™ 2019), Lisbon, Portugal, which discussed the nature of OFF episodes in PD, associated risk factors and the potential of current and future treatments to effectively manage them and increase ON time.

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42

Jung, Hak Kee. "Projected Range Dependent Tunneling Current of Asymmetric Double Gate MOSFET." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 1 (2016): 113. http://dx.doi.org/10.11591/ijece.v6i1.9342.

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This study is to analyze the changes of tunneling current according to projected range, a variable of Gaussian function of channel doping function of Asymmetric Double Gate; ADG MOSFET. In MOSFET with channel length below 10 nm, tunneling current occupies a large percentage among off-currents. The increase of tunneling current has a large effect on the characteristics of subthreshold such as threshold voltage movement and the decline of subthreshold swing value, so the accurate analysis of this is being required. To analyze this, potential distribution of series form was obtained using Gaussian distribution function, and using this hermeneutic potential distribution, thermionic emission current and tunneling current making up off-current were obtained. At this point, the effect that the changes of projected range, a variable of Gaussian distribution function, have on the ratio of tunneling current among off-currents was analyzed. As a result, the smaller projected range was, the lower the ratio of tunneling current was. When projected range increased, tunneling current increased largely. Also, it was observed that the value of projected range which the ratio of tunneling current increased changed according to maximum channel doping value, channel length, and channel width.

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43

Jung, Hak Kee. "Projected Range Dependent Tunneling Current of Asymmetric Double Gate MOSFET." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 1 (2016): 113. http://dx.doi.org/10.11591/ijece.v6i1.pp113-119.

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This study is to analyze the changes of tunneling current according to projected range, a variable of Gaussian function of channel doping function of Asymmetric Double Gate; ADG MOSFET. In MOSFET with channel length below 10 nm, tunneling current occupies a large percentage among off-currents. The increase of tunneling current has a large effect on the characteristics of subthreshold such as threshold voltage movement and the decline of subthreshold swing value, so the accurate analysis of this is being required. To analyze this, potential distribution of series form was obtained using Gaussian distribution function, and using this hermeneutic potential distribution, thermionic emission current and tunneling current making up off-current were obtained. At this point, the effect that the changes of projected range, a variable of Gaussian distribution function, have on the ratio of tunneling current among off-currents was analyzed. As a result, the smaller projected range was, the lower the ratio of tunneling current was. When projected range increased, tunneling current increased largely. Also, it was observed that the value of projected range which the ratio of tunneling current increased changed according to maximum channel doping value, channel length, and channel width.

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44

Pinsker, R. I., X. Chen, J. M. Lohr, et al. "Tests of advanced RF off-axis current drive techniques on DIII-D." EPJ Web of Conferences 203 (2019): 02008. http://dx.doi.org/10.1051/epjconf/201920302008.

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The establishment of reactor-relevant radiofrequency heating and current drive techniques is a focus of work on DIII-D in the next five-year period. This paper gives an overview of the planned experimental work in the areas of (1) nearly vertically launched ECCD, (2) ‘helicon’ (whistlers or fast waves in the lower hybrid range of frequencies) current drive, and (3) high-field-side-launch (HFS) lower hybrid (slow wave) current drive. Each of these techniques addresses the need for efficient off-axis current drive for a steady-state tokamak reactor to supplement the bootstrap current and to provide current profile control, and each will be experimentally assessed at a coupled power level of ~1 MW on DIII-D in the next few years.

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45

Jung, Hakkee. "Analysis on Forward/Backward Current Distribution and Off-current for Doping Concentration of Double Gate MOSFET." Journal of the Korea Institute of Information and Communication Engineering 17, no. 10 (2013): 2403–8. http://dx.doi.org/10.6109/jkiice.2013.17.10.2403.

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46

Ying, Lim Zu, Sharifah Fatmadiana Wan Muhamad Hatta, and Hanim Hussin. "Investigation of Material and Geometric Effects on the Performance of Gate All Around Nanowire TFET and FET Devices." Journal of New Explorations in Electrical Engineering 1, no. 1 (2025): 40–48. https://doi.org/10.22452/nece.vol1no1.4.

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Advancements in nanoscale technology have enabled lower operating voltages and reduced power consumption, but also increased leakage currents. This study explores the performance of Tunnel Field-Effect Transistors (TFETs) and Field-Effect Transistors (FETs) using gate-all-around (GAA) silicon nanowires (Si-NW), which offer improvements over traditional MOSFETs by reducing short channel effects. The optimized GAA NWTFETs achieved a significant reduction in threshold voltage (69.5%) and leakage current (6.39%), while enhancing ON current, subthreshold swing, and ON/OFF current ratio. Similarly, the optimized GAA NWFETs demonstrated a substantial reduction in leakage current (97.59%) and a dramatic improvement in the ON/OFF current ratio by 4611.97%. These results highlight the potential of GAA nanowire TFETs and FETs in advancing semiconductor technologies with improved performance and energy efficiency.

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47

Wu, Zhaoyang, Wei Lu, Xiangyang Bao, et al. "Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch." International Journal of Modern Physics B 35, no. 07 (2021): 2150107. http://dx.doi.org/10.1142/s0217979221501071.

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In this paper, a simulation model of [Formula: see text] type PiN high voltage pulse open switch is established. The switch operates in “punch through” mode, with a 4 kA/cm2 cut-off current density and sub-nanosecond cut-off speed. The cut-off process of switch can be divided into three stages, that is, non-equilibrium carriers extraction stage, majority carriers drift stage and charging stage of junction capacitance by change of internal electric field and carrier concentration. Keeping injection current and cut-off current as 20 A and 40 A, the switch cut-off speed and “pedestal” voltage are reciprocally determined. Thus, optimizing the doping concentration and thickness of [Formula: see text] layer is a valid solution for the actual system design.

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48

Faraj, Moneer A., Fahmi Samsuri, Ahmed N. AbdAlla, Damhuji Rifai, Kharudin Ali, and Y. Al-Douri. "Investigate the effect of lift-off on eddy current signal for carbon steel plate." MATEC Web of Conferences 225 (2018): 06005. http://dx.doi.org/10.1051/matecconf/201822506005.

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In this study, the effect of various factors like lift-off and depth defect on the eddy current signal was investigated. Investigation methods like response surface methodology (RSM) and composed central design (CCD) were employed to establish the relationship between lift-off distance, depth of a defect and the eddy current signal by the two-factor interaction equation, and would provide a reference in further to accurate the depth defect. The regression analysis suggested that eddy current signal was well fitted by the two-factor interaction equation (R2 = 0.9656). The eddy current signal was investigated by varying the levels of these two independent variables, in which all have significant influences on eddy current signal. There would be a change in the amplitude and when lift-off distance is altered, and lift off distance increased, the increase of the amplitude of output signal decrease gradually.

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K., E. Kaharudin, A. F. M. Napiah Z., Salehuddin F., S. M. Zain A., and F. Roslan Ameer. "Performance analysis of ultrathin junctionless double gate vertical MOSFETs." Bulletin of Electrical Engineering and Informatics 8, no. 4 (2019): 1268–78. https://doi.org/10.11591/eei.v8i4.1615.

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The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D) junction with high doping concentration gradient, which requires an intricate S/D and channel engineering. Junctionless MOSFET configuration is an alternative solution for this issue as the junction and doping gradients is totally eliminated. A process simulation has been developed to investigate the impact of junctionless configuration on the double-gate vertical MOSFET. The result proves that the performance of junctionless double-gate vertical MOSFETs (JLDGVM) are superior to the conventional junctioned double-gate vertical MOSFETs (JDGVM). The results reveal that the drain current (ID) of the n-JLVDGM and p-JLVDGM could be tremendously enhanced by 57% and 60% respectively as the junctionless configuration was applied to the double-gate vertical MOSFET. In addition, junctionless devices also exhibit larger ION/IOFF ratio and smaller subthreshold slope compared to the junction devices, implying that the junctionless devices have better power consumption and faster switching capability.

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Sim, Hye Ryun, Sangjun Lee, Juhyeok Lee, et al. "Liquid-Film Rupture for Web-like Ag Nanowires Toward High-Performance Organic Schottky Barrier Transistors." ECS Meeting Abstracts MA2024-02, no. 34 (2024): 2405. https://doi.org/10.1149/ma2024-02342405mtgabs.

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Organic vertical transistors are promising device with advantages such as high operation speed, high saturation current density, and low-voltage operation due to their short channel length. However, a short channel length causes undesirably high off-current, which affects the on–off ratio and power consumption. This study presents a breakthrough in the development of high-performance organic Schottky barrier transistors (OSBTs) with a low off-current by utilizing a near-ideal source electrode with a web-like Ag nanowire (AgNW) morphology. This is achieved by employing a humidity- and surface-tension-mediated liquid-film rupture technique, which facilitates the formation of well-connected AgNW networks with large pores between them. Therefore, the gate electric field is effectively transmitted to the semiconductor layer. Also, the minimized surface area of the AgNWs causes complete suppression of the off-current and induces ideal saturation of the OSBT output characteristics. p- and n-type OSBTs exhibit off-currents in the picoampere range with on/off ratios exceeding 106 and 105, respectively. Furthermore, complementary inverters are prepared using an aryl azide cross-linker for patterning, with a gain of >16. This study represents a significant milestone in the development of high-performance organic vertical transistors and verifies their applicability in organic electronic circuitry.

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