Relevant bibliographies by topics / Optical properties: Band gap

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Optical properties: Band gap'

Author: Grafiati
Published: 5 June 2025
Last updated: 2 August 2025

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Journal articles on the topic "Optical properties: Band gap"

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Almo'men, Bellah Alawnah, Yousef Hayajneh Ola, and Hayajneh Rajaa. "Factors that Affect Optical Properties of SemiconductorMaterials." International Journal of Innovative Science and Research Technology 8, no. 3 (2023): 1090–93. https://doi.org/10.5281/zenodo.7780011.

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Semiconductors has many characteristics and properties, such as optical properties that relates to the changes in the reflective index (n), extinction coefficient (k), single oscillator parameters, intensity, and the band gap energy. Factors that affect optical properties of semiconductor materials were investigated, ten papers that related to this topic were reviewed, in order to study these factors. It’s found that with the increase of the gamma dose, using surfactant, and using a passiveagent such as CeO2 cause a reduction in the band gap energy, while using elements from group I incr
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Imai, Motoharu, Takahiro Yamada, and Hisanori Yamane. "Electronic structure and optical properties of NaSi." Japanese Journal of Applied Physics 61, no. 3 (2022): 031004. http://dx.doi.org/10.35848/1347-4065/ac4d45.

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Abstract The electronic structure and optical properties of NaSi were investigated using first-principles calculations and diffuse reflectance measurements. The calculation indicates that NaSi is an indirect band gap semiconductor whose valence band maxima and conduction band minima are located at a k-point between the Γ and X points and at the Y point, respectively. NaSi has several direct band gaps, which are approximately 0.1 eV larger than the indirect band gap, leading to its large optical absorption coefficient near the indirect band gap. The valence bands originate from Si-3p states and
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Zhang, Gai Mei, Can Wang, Yan Jun Guo, Wang Wei, and Xiao Xiang Song. "Preparation and Optical Properties of One-Dimensional Ag/SiOx Photonic Crystal." Applied Mechanics and Materials 576 (June 2014): 27–31. http://dx.doi.org/10.4028/www.scientific.net/amm.576.27.

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The photonic crystal has the property that electromagnetic waves with interval of frequency in photonic band gap (PBG) can not be propagated, so it has important applying and researching value. The traditional one-dimensional photonic crystal is with narrow band gap width, and the reflection within the band is small, especially the band gap is sensitive to the incident angle and the polarization of light. A new photonic band gap (PBG) structure, metallodielectric photonic crystal by inserting metal film in the medium can overcomes the shortcomings mentioned above. The one-dimensional Ag/SiOx p
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Journal, Baghdad Science. "Optical properties of CdO thin films." Baghdad Science Journal 7, no. 1 (2010): 10–13. http://dx.doi.org/10.21123/bsj.7.1.10-13.

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Cadmium Oxide thin films were deposited on glass substrate by spray pyrolysis technique at different temperatures (300,350,400, 500)oC. The optical properties of the films were studied in this work. The optical band-gap was determined from absorption spectra, it was found that the optical band-gap was within the range of (2.5-2.56)eV also width of localized states and another optical properties.
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Ullah, Hadaate, Ridoanur Rahaman, and Shahin Mahmud. "Optical Properties of Cadmium Oxide (CdO) Thin Films." Indonesian Journal of Electrical Engineering and Computer Science 5, no. 1 (2017): 81. http://dx.doi.org/10.11591/ijeecs.v5.i1.pp81-84.

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<p>Cadmium (Cd) is a soft, silver-white or blue lustrous metal typically found in mineral deposits with lead, zinc and copper. Cadmium Oxide thin films have been prepared on a glass substrate at 350<sup>0</sup>C temperature by implementing the Spray Pyrolysis method. The direct and indirect band gap energies are determined using spectral data. The direct and indirect band gap energies decrease with the increasing film thickness. It is noted that for the same film thickness the direct band gap energy is greater than indirect band gap energy. The transmittance increases with th
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Ahmad, Sardar, Hamide Vaizie, H. A. Rahnamaye Aliabad, et al. "First-principles studies of pure and fluorine substituted alanines." International Journal of Modern Physics B 30, no. 14 (2016): 1650079. http://dx.doi.org/10.1142/s021797921650079x.

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This paper communicates the structural, electronic and optical properties of L-alanine, monofluoro and difluoro substituted alanines using density functional calculations. These compounds exist in orthorhombic crystal structure and the calculated structural parameters such as lattice constants, bond angles and bond lengths are in agreement with the experimental results. L-alanine is an indirect band gap insulator, while its fluorine substituted compounds (monofluoroalanine and difluoroalanine) are direct band gap insulators. The substitution causes reduction in the band gap and hence these opt
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Sabov, V. I., I. E. Barchii, M. Piasecki, et al. "OPTICAL PROPERTIES of the TlSbP2Se6 SINGLE CRYSTALL." Scientific Bulletin of the Uzhhorod University. Series «Chemistry» 51, no. 1 (2024): 34–38. http://dx.doi.org/10.24144/2414-0260.2024.1.34-38.

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The scientific interest in TlSbP2Se6 compound is due to a number of factors. Firstly, this compound is characterized by congruent melting behavior, which allows obtaining high-quality bulk single crystals by the method of directional crystallization using the Bridgman technique. Secondly, it is characterized by an acentric 2 D layered structure. Previous studies of TlSbP2Se6 single crystals were limited to optimizing the conditions for growing single crystals, refinig its crystal structure, determining its qualitative and quantitative composition, determining the optical transparency region, a
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SHIOMI, Shoma, Kei ARIMA, Miho KAWAI, et al. "Optical Properties of Wide Band-Gap Semiconductor ZnMgSTe." Journal of the Society of Materials Science, Japan 73, no. 10 (2024): 774–77. http://dx.doi.org/10.2472/jsms.73.774.

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Köferstein, Roberto. "Semiconducting properties of Ge-doped BaSnO3 ceramic." Journal of Alloys and Compounds 506 (July 7, 2010): 678–82. https://doi.org/10.1016/j.jallcom.2010.07.041.

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The electrical and optical properties of Ge-doped BaSnO3 ceramics sintered at various temperatures have been investigated to determine their semiconductor behavior. The electrical conductivity of Ge-doped BaSnO3 samples increases with increase in temperature, confirming that the samples exhibit a semiconductor behavior. A maximum conductivity value of 6.31 × 10−9 S/cm was observed for the sample sintered at 1200 °C. The optical band gaps of the Ge-doped BaSnO3 samples were determined by means of reflectance spectra. The variation of optical band gap with temperature was analyze
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Li, Yin, Chuanghua Yang, Liyuan Wu, and Ru Zhang. "Electrical and optical properties of Si-doped Ga2O3." Modern Physics Letters B 31, no. 15 (2017): 1750172. http://dx.doi.org/10.1142/s021798491750172x.

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The charge densities, band structure, density of states, dielectric functions of Si-doped [Formula: see text]-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orb
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Dissertations / Theses on the topic "Optical properties: Band gap"

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Chan, Yung, and 陳勇. "Optical functions of wide band gap semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B45015338.

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Zacharias, Marios. "Optical properties of semiconductors at finite temperatures from first principles." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:4fad686d-c675-44e6-85c7-2725e6598ca5.

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In this thesis we develop a new first-principles method for the calculation of optical absorption spectra and band structures in semiconductors and insulators at finite tem- peratures. The theoretical framework of our methodology originates back to 1950s in two pivotal research papers by F. Williams and M. Lax. Here, we expand the scope of the pioneering works by Williams and Lax, and we present a new theory of phonon- assisted optical absorption and temperature-dependent band structures. We demon- strate that our technique is highly efficient and simple to the point that a single calcu- latio
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Azam, Asad Muhammad. "Spectroscopic Optical Band Gap Properties and Morphological Study of Ultra-High Molecular Weight Polyethylene Nano Composites with Mg0.15Ni0.15Zn0.70Fe2O3." Thesis, Umeå universitet, Institutionen för fysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-115809.

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Ultra high molecular weight polyethylene has been commonly used as a biomaterial for hip and knee implants. This thesis concerns optical and three phase morphology of nano composites of ultra high molecular weight polyethylene (UHMWPE) with Mg0.15Ni0.15Zn0.70Fe2O3 using analytical techniques such as UV-visible spectroscopy and Raman spectroscopy. Muller matrix spectro-polarimeter has been used to study the absorption behavior over the visible spectral range i.e. 400-800 nm. The results show significant changes in the absorption behavior of UHMWPE/Zn nano ferrite samples. To analyze these chang
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Rajakarunanayake, Yasantha Nirmal McGill T. C. McGill T. C. "Optical properties of Si-Ge superlattices and wide band gap II-VI superlattices /." Diss., Pasadena, Calif. : California Institute of Technology, 1991. http://resolver.caltech.edu/CaltechETD:etd-07122007-074702.

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Little, Mark Edward. "Growth and Characterization of Electronic and Optical Properties of Wide Band Gap Amorphous Nitride Alloys." Ohio University / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou997793963.

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Almoussawi, Batoul. "Semi-conducteurs innovants par ingénierie du band gap et manipulation anionique." Electronic Thesis or Diss., Université de Lille (2018-2021), 2021. https://pepite-depot.univ-lille.fr/LIBRE/EDSMRE/2021/2021LILUR043.pdf.

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Les composés à anions mixtes peuvent permettre d'atteindre des structures et des propriétés inaccessibles dans le cas de phases mono-anionique, ce qui offre de nombreuses opportunités pour la recherche exploratoire de composés à anions mixtes fonctionnels. Un intérêt majeur de la présence d’anions multiples au sein d’une phase est l'ingénierie du band gap via les contributions des orbitales anioniques en haut de la bande de valence, permettant ainsi le contrôle de la structure électronique et des propriétés. De plus, les environnement hétéroleptiques autour d'un cation (entouré d'au moins deux
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Опанасюк, Анатолій Сергійович, Анатолий Сергеевич Опанасюк, Anatolii Serhiiovych Opanasiuk, et al. "Structural and optical-properties of CdTe and CdMnTe films." Thesis, Brookhaven National Laboratory, 2012. http://essuir.sumdu.edu.ua/handle/123456789/30130.

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We undertook a detailed investigation of the structural- and optical-properties of CdTe- and Cd1-xMnxTe-semiconductor films deposited by close-spaced vacuum sublimation using thermal evaporation on non-oriented substrates. From our structural- and phase-analysis of the layers, we obtained information on their structure, deformations, grain size, and content of dislocations for films deposited at different substrate temperatures. We considered that despite the presence of defects in the crystals, the films offer promise for fabrication into x-ray detectors. When you are citing the document, us
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Wang, Jielei Ms. "Optical Properties of In1-xGaxN Epilayers Grown by HPCVD." Digital Archive @ GSU, 2010. http://digitalarchive.gsu.edu/phy_astr_theses/9.

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Optical absorption spectroscopy has been applied to study properties such as the fundamental absorption edge and defect absorption centers of group III-nitride compound semiconductor epilayers. The investigation in this thesis focused on analyzing the band gap of indium-rich In1-xGaxN epilayers, which where grown by the high-pressure chemical vapor deposition (HPCVD) technique. Our results - together with literature data for gallium-rich In1-xGaxN alloys indicate that the shift of the fundamental band gap of In1-xGaxN with composition x can be described with a bowing parameter of b = 2.2eV. Te
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Goksen, Kadir. "Optical Properties Of Some Quaternary Thallium Chalcogenides." Phd thesis, METU, 2008. http://etd.lib.metu.edu.tr/upload/12609442/index.pdf.

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Optical properties of Tl4In3GaSe8, Tl4InGa3Se8, Tl4In3GaS8, Tl2InGaS4 and Tl4InGa3S8 chain and layered crystals were studied by means of photoluminescence (PL) and transmission-reflection experiments. Several emission bands were observed in the PL spectra within the 475-800 nm wavelength region. The results of the temperature- and excitation intensity-dependent PL measurements in 15-300 K and 0.13&times<br>10-3-110.34 W cm-2 ranges, respectively, suggested that the observed bands were originated from the recombination of electrons with the holes by realization of donor-acceptor or free-to-boun
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Zamchiy, A. O., S. Ya Khmel, and E. A. Baranov. "Influence of Substrate Temperature on the Optical Properties and the Deposition Rate of Amorphous Silicon Films." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35394.

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Layers of intrinsic hydrogenated amorphous silicon (a-Si:H) films were deposited using Gas-Jet Electron Beam Plasma Chemical Vapor Deposition (GJ-EBP-CVD) technique. The optical parameters (refraction index (n), absorption coefficient ( )) and the thickness were determined from the extremes of the interference fringes of transmission spectrum in the range of 500 – 1000 nm using the envelope method and method PUMA. The spectral dependence of the refractive index and absorption coefficient was obtained by varying the substrate temperature (Ts). The optical band gap (Eg) was determined using
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Books on the topic "Optical properties: Band gap"

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Prelas, Mark A. Wide Band Gap Electronic Materials. Springer Netherlands, 1995.

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Torres, C. M. Sotomayor. Optical Properties of Narrow-Gap Low-Dimensional Structures. Springer US, 1987.

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Sotomayor Torres, C. M., J. C. Portal, J. C. Maan, and R. A. Stradling, eds. Optical Properties of Narrow-Gap Low-Dimensional Structures. Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1879-8.

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NATO Advanced Research Workshop on Optical Properties of Narrow-Gap Low-Dimensional Structures (1986 St. Andrews, Scotland). Optical properties of narrow-gap low-dimensional structures. Plenum Press, 1987.

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Cohen, Marvin L. Electronic structure and optical properties of semiconductors. Springer-Verlag, 1988.

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McGill, T. C., C. M. Sotomayor Torres, and W. Gebhardt, eds. Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5.

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McGill, T. C. Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors. Springer US, 1989.

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NATO Advanced Research Workshop on Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors (1988 Regensburg, Germany). Growth and optical properties of wide-gap II-VI low-dimensional semiconductors. Plenum Press, 1989.

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Kalt, H. Optical properties of III-V semiconductors: The influence of multi-valley bandstructures. Springer-Verlag, 1996.

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Kalt, H. Optical properties of III-V semiconductors: The influence of multi-valley band structures. Springer-Verlag, 1996.

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Book chapters on the topic "Optical properties: Band gap"

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Voss, Tobias, and Jürgen Gutowski. "Surface Related Optical Properties of ZnO Nanowires." In Wide Band Gap Semiconductor Nanowires 1. John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984321.ch4.

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Lefebvre, Pierre. "Surface-Related Optical Properties of GaN-Based Nanowires." In Wide Band Gap Semiconductor Nanowires 1. John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984321.ch3.

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Stoica, T., A. Dragomir, M. Gartner, C. Morosanu, and G. Pavelescu. "Optical Properties of Sputtering and Glow Discharge a-C:H Films." In Wide Band Gap Electronic Materials. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0173-8_29.

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Sleptsov, V. V., V. M. Elinson, A. M. Baranov, and S. A. Tereshin. "Optical and Electrical Properties of Quantum-Dimensional Multilayer Structures Based on Carbon FLLMS." In Wide Band Gap Electronic Materials. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0173-8_26.

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Bhargava, R. N. "Optoelectronic Devices from Wide Band Gap II-VI Semiconductors." In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_1.

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Guha, S., W. Graupner, S. Yang, M. Chandrasekhar, and H. R. Chandrasekhar. "Optical Properties of Organic Wide Band-Gap Semiconductors under High Pressure." In ACS Symposium Series. American Chemical Society, 2001. http://dx.doi.org/10.1021/bk-2001-0798.ch009.

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Monteiro, T. "Luminescence of Broad Bands in Mn-Doped n-Type GaP." In Optical Properties of Excited States in Solids. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3044-2_53.

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Gumlich, H. E. "Some Aspects of Impurities in Wide Band Gap II-VI Compounds." In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_11.

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García, Jorge M., Benito Alén, Juan Pedro Silveira, and Daniel Granados. "0D Band Gap Engineering by MBE Quantum Rings: Fabrication and Optical Properties." In Physics of Quantum Rings. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-39197-2_3.

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Cockayne, B., and P. J. Wright. "The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds." In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_8.

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Conference papers on the topic "Optical properties: Band gap"

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Ivasiv, Z. F., Vladimir V. Tetyorkin, Fiodor F. Sizov, and V. A. Petryakov. "Optical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov. SPIE, 1999. http://dx.doi.org/10.1117/12.368334.

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Youngdale, E. R., J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and W. I. Wang. "Nonlinear Optical Properties of Narrow-Gap Type-II Superlattices." In Nonlinear Optics. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/nlo.1992.wd2.

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We report here the first experimental and theoretical investigation of free carrier nonlinear optical processes in Type-II superlattices with narrow energy gaps. A general analysis of the effects of semiconductor band structure on nonlinear response at long wavelengths shows that the most favorable nonlinearities may be achievable in heterostructures with an indirect band alignment, where the indirectness may be in either real or momentum space.1 One of the most relevant figures of merit for devices is An/a, where An is the nonlinear modulation of the index of refraction and a is the absorptio
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Pennise, C. A., J. D. Bruno, M. S. Tobin, and T. B. Simpson. "Optical Modulation of the Refractive Index in Gallium Arsenide Doping Superlattices." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.mf1.

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Doping superlattices, also called nipi superlattices, consist of thin alternating n- and p-doped layers of semiconductor material. This periodic doping profile leads to a periodic electric potential perpendicular to the layers. Potential wells for electrons are in the n-type layers, while potential wells for the holes are in the p-type layers. The periodic potential creates an effective band gap in real space, smaller in energy than the direct gap, which is a function of the density of confined carriers, the impurity doping density, and the thickness of the layers. When mobile electrons and ho
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Buczynski, Ryszard, Dariusz Pysz, Tuomo Ritari, Przemyslaw Szarniak, Hanne Ludvigsen, and Ryszard Stepien. "Optical properties of photonic band gap fibers made of silicate glass." In Photonics Europe, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2006. http://dx.doi.org/10.1117/12.663402.

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Dasgupta, S., C. Bose, M. R. Singh, and R. H. Lipson. "Dielectric Material Based Band Gap Tailoring For 1D Photonic Crystal." In TRANSPORT AND OPTICAL PROPERTIES OF NANOMATERIALS: Proceedings of the International Conference—ICTOPON-2009. AIP, 2009. http://dx.doi.org/10.1063/1.3183426.

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Prasad, Arun S., S. N. Dolia, M. S. Dhawan, et al. "Optical Band Gap Study Of Nanocrystalline NiCr[sub 0.8]Fe[sub 1.2]O[sub 4] Ferrite." In THERMOPHYSICAL PROPERTIES OF MATERIALS AND DEVICES: IVth National Conference on Thermophysical Properties - NCTP'07. AIP, 2008. http://dx.doi.org/10.1063/1.2927536.

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Wang, Junquan, Fanmin Kong, Kang Li, Yong Fu, and Liangmo Mei. "Photonic band gap and transmission properties research in 2D holographic photonic crystals using FDTD." In Asia-Pacific Optical Communications, edited by Yong Hee Lee, Fumio Koyama, and Yi Luo. SPIE, 2006. http://dx.doi.org/10.1117/12.691032.

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Mantella, Valeria, Silviya Ninova, Seryio Saris, Anna Loiudice, Ulrich Aschauer, and Raffella Buonsanti. "Synthesis and Size-dependent Optical Properties of Intermediate Band Gap Cu3VS4 Nanocrystals." In nanoGe Fall Meeting 2019. Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.ngfm.2019.099.

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Mantella, Valeria, Silviya Ninova, Seryio Saris, Anna Loiudice, Ulrich Aschauer, and Raffella Buonsanti. "Synthesis and Size-dependent Optical Properties of Intermediate Band Gap Cu3VS4 Nanocrystals." In nanoGe Fall Meeting 2019. Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.nfm.2019.099.

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Jamwal, Nishant Singh, and Amirkianoosh Kiani. "Pulse Ionized Silicon Nanostructures: Investigation of Optical Properties." In Optical Interference Coatings. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/oic.2022.md.4.

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We introduce a method for increasing silicon band gap via ultrashort laser pulse ionization. Different silicon nanostructures have been generated by varying the ablation scanning speed and the optical properties were examined.
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Reports on the topic "Optical properties: Band gap"

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Gaeta. Novel Optical Interaction in Band-Gap Photonic Crystal Fibers. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada456785.

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Hommerich, Uwe. Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada369833.

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Rudin, Sergey, Gregory Garrett, and Vladimir Malinovsky. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada620146.

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Kouvetakis, John. Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada482288.

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Perina, Jan, Ondrej Haderka, and Michael Scalora. Nonclassical Properties of Pulsed Second-Subharmonic Generation in Photonic-Band-Gap Structures. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada468027.

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Larciprete, Maria C. Development of One-Dimensional Dielectric and Metal-Dielectric Photonic Band Gap for Optical Switching and Limiting Applications. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada457953.

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Cohen, J. D. Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007. Office of Scientific and Technical Information (OSTI), 2008. http://dx.doi.org/10.2172/937345.

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Ramos, Nuno M. M., Joana Maia, Rita Carvalho Veloso, Andrea Resende Souza, Catarina Dias, and João Ventura. Envelope systems with high solar reflectance by the inclusion of nanoparticles – an overview of the EnReflect Project. Department of the Built Environment, 2023. http://dx.doi.org/10.54337/aau541621982.

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High reflectance materials constitute an attractive idea to reduce cooling loads, which is crucial for attaining the Nearly Zero Energy Buildings goal, also presenting the benefit of broadening the range of colours applicable in building facades. The EnReflect project intended to re-design envelope systems by increasing their solar reflectance through nanotechnology. The main idea was to produce novel nanomaterial-based coatings with high near-infrared (NIR) reflectance by tuning their optical properties and testing their compatibility with typical insulation technologies such as ETICS. As suc
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Anderson, Gerald L., and Kalman Peleg. Precision Cropping by Remotely Sensed Prorotype Plots and Calibration in the Complex Domain. United States Department of Agriculture, 2002. http://dx.doi.org/10.32747/2002.7585193.bard.

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This research report describes a methodology whereby multi-spectral and hyperspectral imagery from remote sensing, is used for deriving predicted field maps of selected plant growth attributes which are required for precision cropping. A major task in precision cropping is to establish areas of the field that differ from the rest of the field and share a common characteristic. Yield distribution f maps can be prepared by yield monitors, which are available for some harvester types. Other field attributes of interest in precision cropping, e.g. soil properties, leaf Nitrate, biomass etc. are ob
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