Log in

Relevant bibliographies by topics / Optical properties: Band gap / Dissertations / Theses

To see the other types of publications on this topic, follow the link: Optical properties: Band gap.

Dissertations / Theses on the topic 'Optical properties: Band gap'

Author: Grafiati

Published: 5 June 2025

Last updated: 2 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 dissertations / theses for your research on the topic 'Optical properties: Band gap.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Chan, Yung, and 陳勇. "Optical functions of wide band gap semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B45015338.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Zacharias, Marios. "Optical properties of semiconductors at finite temperatures from first principles." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:4fad686d-c675-44e6-85c7-2725e6598ca5.

Full text

Abstract:

In this thesis we develop a new first-principles method for the calculation of optical absorption spectra and band structures in semiconductors and insulators at finite tem- peratures. The theoretical framework of our methodology originates back to 1950s in two pivotal research papers by F. Williams and M. Lax. Here, we expand the scope of the pioneering works by Williams and Lax, and we present a new theory of phonon- assisted optical absorption and temperature-dependent band structures. We demon- strate that our technique is highly efficient and simple to the point that a single calcu- latio

APA, Harvard, Vancouver, ISO, and other styles

3

Azam, Asad Muhammad. "Spectroscopic Optical Band Gap Properties and Morphological Study of Ultra-High Molecular Weight Polyethylene Nano Composites with Mg0.15Ni0.15Zn0.70Fe2O3." Thesis, Umeå universitet, Institutionen för fysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-115809.

Full text

Abstract:

Ultra high molecular weight polyethylene has been commonly used as a biomaterial for hip and knee implants. This thesis concerns optical and three phase morphology of nano composites of ultra high molecular weight polyethylene (UHMWPE) with Mg0.15Ni0.15Zn0.70Fe2O3 using analytical techniques such as UV-visible spectroscopy and Raman spectroscopy. Muller matrix spectro-polarimeter has been used to study the absorption behavior over the visible spectral range i.e. 400-800 nm. The results show significant changes in the absorption behavior of UHMWPE/Zn nano ferrite samples. To analyze these chang

APA, Harvard, Vancouver, ISO, and other styles

4

Rajakarunanayake, Yasantha Nirmal McGill T. C. McGill T. C. "Optical properties of Si-Ge superlattices and wide band gap II-VI superlattices /." Diss., Pasadena, Calif. : California Institute of Technology, 1991. http://resolver.caltech.edu/CaltechETD:etd-07122007-074702.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Little, Mark Edward. "Growth and Characterization of Electronic and Optical Properties of Wide Band Gap Amorphous Nitride Alloys." Ohio University / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou997793963.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Almoussawi, Batoul. "Semi-conducteurs innovants par ingénierie du band gap et manipulation anionique." Electronic Thesis or Diss., Université de Lille (2018-2021), 2021. https://pepite-depot.univ-lille.fr/LIBRE/EDSMRE/2021/2021LILUR043.pdf.

Full text

Abstract:

Les composés à anions mixtes peuvent permettre d'atteindre des structures et des propriétés inaccessibles dans le cas de phases mono-anionique, ce qui offre de nombreuses opportunités pour la recherche exploratoire de composés à anions mixtes fonctionnels. Un intérêt majeur de la présence d’anions multiples au sein d’une phase est l'ingénierie du band gap via les contributions des orbitales anioniques en haut de la bande de valence, permettant ainsi le contrôle de la structure électronique et des propriétés. De plus, les environnement hétéroleptiques autour d'un cation (entouré d'au moins deux

APA, Harvard, Vancouver, ISO, and other styles

7

Опанасюк, Анатолій Сергійович, Анатолий Сергеевич Опанасюк, Anatolii Serhiiovych Opanasiuk, et al. "Structural and optical-properties of CdTe and CdMnTe films." Thesis, Brookhaven National Laboratory, 2012. http://essuir.sumdu.edu.ua/handle/123456789/30130.

Full text

Abstract:

We undertook a detailed investigation of the structural- and optical-properties of CdTe- and Cd1-xMnxTe-semiconductor films deposited by close-spaced vacuum sublimation using thermal evaporation on non-oriented substrates. From our structural- and phase-analysis of the layers, we obtained information on their structure, deformations, grain size, and content of dislocations for films deposited at different substrate temperatures. We considered that despite the presence of defects in the crystals, the films offer promise for fabrication into x-ray detectors. When you are citing the document, us

APA, Harvard, Vancouver, ISO, and other styles

8

Wang, Jielei Ms. "Optical Properties of In1-xGaxN Epilayers Grown by HPCVD." Digital Archive @ GSU, 2010. http://digitalarchive.gsu.edu/phy_astr_theses/9.

Full text

Abstract:

Optical absorption spectroscopy has been applied to study properties such as the fundamental absorption edge and defect absorption centers of group III-nitride compound semiconductor epilayers. The investigation in this thesis focused on analyzing the band gap of indium-rich In1-xGaxN epilayers, which where grown by the high-pressure chemical vapor deposition (HPCVD) technique. Our results - together with literature data for gallium-rich In1-xGaxN alloys indicate that the shift of the fundamental band gap of In1-xGaxN with composition x can be described with a bowing parameter of b = 2.2eV. Te

APA, Harvard, Vancouver, ISO, and other styles

9

Goksen, Kadir. "Optical Properties Of Some Quaternary Thallium Chalcogenides." Phd thesis, METU, 2008. http://etd.lib.metu.edu.tr/upload/12609442/index.pdf.

Full text

Abstract:

Optical properties of Tl4In3GaSe8, Tl4InGa3Se8, Tl4In3GaS8, Tl2InGaS4 and Tl4InGa3S8 chain and layered crystals were studied by means of photoluminescence (PL) and transmission-reflection experiments. Several emission bands were observed in the PL spectra within the 475-800 nm wavelength region. The results of the temperature- and excitation intensity-dependent PL measurements in 15-300 K and 0.13&times<br>10-3-110.34 W cm-2 ranges, respectively, suggested that the observed bands were originated from the recombination of electrons with the holes by realization of donor-acceptor or free-to-boun

APA, Harvard, Vancouver, ISO, and other styles

10

Zamchiy, A. O., S. Ya Khmel, and E. A. Baranov. "Influence of Substrate Temperature on the Optical Properties and the Deposition Rate of Amorphous Silicon Films." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35394.

Full text

Abstract:

Layers of intrinsic hydrogenated amorphous silicon (a-Si:H) films were deposited using Gas-Jet Electron Beam Plasma Chemical Vapor Deposition (GJ-EBP-CVD) technique. The optical parameters (refraction index (n), absorption coefficient ( )) and the thickness were determined from the extremes of the interference fringes of transmission spectrum in the range of 500 – 1000 nm using the envelope method and method PUMA. The spectral dependence of the refractive index and absorption coefficient was obtained by varying the substrate temperature (Ts). The optical band gap (Eg) was determined using

APA, Harvard, Vancouver, ISO, and other styles

11

McNamara, Joy. "The Effect of Temperature on the Electrical and Optical Properties of p-type GaN." VCU Scholars Compass, 2013. http://scholarscompass.vcu.edu/etd/3049.

Full text

Abstract:

The development of gallium nitride (GaN) light emitting devices has reached extraordinary echelons. As such, the characterization and analysis of the behavior of GaN materials is essential to the advancement of GaN technology. In this thesis, the effect of temperature on the optical and electrical properties of p-type GaN is investigated. The GaN samples used in this work were grown by various methods and studied by Kelvin probe and photoluminescence (PL) techniques. Specifically, the surface photovoltage (SPV) behavior and PL data were analyzed at different temperatures and illumination inten

APA, Harvard, Vancouver, ISO, and other styles

12

Д`яченко, Олексій Вікторович, Алексей Викторович Дьяченко, Oleksii Viktorovych Diachenko, et al. "Investigation of Optical Properties of Magnesium Oxide Films Obtained by Spray Pyrolysis Technique." Thesis, Odessa I. I. Mechnikov National University, 2016. http://essuir.sumdu.edu.ua/handle/123456789/47318.

Full text

Abstract:

Today more and more areas of optoelectronics used oxide materials, as a result, their study, is very important . Therefore, in this paper, we study optical properties of magnesium oxide films. band gap, spray-pyrolysis, optoelectronics, optical properties.

APA, Harvard, Vancouver, ISO, and other styles

13

Cao, Ke. "The Effect of Hydrogen on the Optical, Structural Properties and the Crystallization of GeTe2 Thin Films Prepared by RF Magnetron Sputtering." Scholar Commons, 2008. http://scholarcommons.usf.edu/etd/3857.

Full text

Abstract:

Thin films of GeTe₂ were deposited on glass substrates using RF magnetron sputtering with various hydrogen flow rates in the growth chamber. Transmission data of deposited films were taken and used to determine optical constants: refractive index (n), extinction coefficient (κ), and absorption coefficient (α)) and the energies: E₀₄, E₀₃, Tauc band gap E[subscript]Tauc and Urbach energy E[subscript]U. An increase of these energies was observed with increasing hydrogen flow rate. This increase is interpreted on the basis of the density of state model proposed by Mott and Davis. An increase of ne

APA, Harvard, Vancouver, ISO, and other styles

14

Shi, Hongting. "Defect structure and optical properties of alkaline earth fluorides." Doctoral thesis, [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=984572015.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Shahid, Naeem. "Technology and properties of InP-based photonic crystal structures and devices." Doctoral thesis, KTH, Halvledarmaterial, HMA, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-101662.

Full text

Abstract:

Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic band gap; a range of wavelengths for which light propagation is forbidden. 2D PhCs exhibit most of the properties as their three dimension counterparts with a compatibility with standard semiconductor processing techniques such as epitaxial growth, electron beam lithography, Plasma deposition/etching and electromechanical lapping/polishing. Indium Phosphide (InP) is the material of choice for photonic devices especially when it comes to realization of coherent light source at 1.55 μm wavelength. Precise enginee

APA, Harvard, Vancouver, ISO, and other styles

16

Mehdi, Aghaei Sadegh. "Electronic and Magnetic Properties of Two-dimensional Nanomaterials beyond Graphene and Their Gas Sensing Applications: Silicene, Germanene, and Boron Carbide." FIU Digital Commons, 2017. http://digitalcommons.fiu.edu/etd/3389.

Full text

Abstract:

The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models. I first explored the impact of edge functio

APA, Harvard, Vancouver, ISO, and other styles

17

Misra, Pranob. "Optical polarization anisotrop in nonpolar GaN thin films due to crystal symmetry and anisotropic strain." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15425.

Full text

Abstract:

Diese Arbeit befasst sich mit den optischen Eigenschaften von dünnen GaN-Schichten gewachsen in verschiedenen Orientierungen. Hierbei werden die optischen Eigenschaften von verspannten M- und A-plane sowie unverspannten C-plane GaN-Schichten untersucht und die Ergebnisse im Rahmen von Bandstrukturberechnungen diskutiert. Im Rahmen dieser Arbeit werden die Bandstrukturverschiebungen theoretisch mittels eines k.p-Näherungsansatzes untersucht. Diese Bandverschiebungen beeinflussen sowohl die Übergangsenergien als auch die Oszillatorstärken. Man findet, dass die C-plane Schicht im Falle einer isot

APA, Harvard, Vancouver, ISO, and other styles

18

Chan, Yung. "Optical functions of wide band gap semiconductors /." View the Table of Contents & Abstract, 2004. http://sunzi.lib.hku.hk/hkuto/record/B32021264.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Tirino, Louis. "Transport Properties of Wide Band Gap Semiconductors." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.

Full text

Abstract:

Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semicla

APA, Harvard, Vancouver, ISO, and other styles

20

Saadatkia, Pooneh. "Optoelectronic Properties of Wide Band Gap Semiconductors." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Aközbek, Neset. "Optical solitary waves in a photonic band gap material." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0007/NQ35096.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Shawley, Charles Richard. "Optical and defect studies of wide band gap materials." Pullman, Wash. : Washington State University, 2008. http://www.dissertations.wsu.edu/Dissertations/Fall2008/c_shawley_012708.pdf.

Full text

Abstract:

Thesis (Ph. D.)--Washington State University, December 2008.<br>Title from PDF title page (viewed on Apr. 13, 2009). "School of Mechanical and Materials Engineering." Includes bibliographical references.

APA, Harvard, Vancouver, ISO, and other styles

23

Schwarz, Casey Minna. "Radiation Effects on Wide Band Gap Semiconductor Transport Properties." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5488.

Full text

Abstract:

In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minori

APA, Harvard, Vancouver, ISO, and other styles

24

Luan, Feng. "Linear and nonlinear properties of photonic band-gap fibres." Thesis, University of Bath, 2005. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.410923.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Schwartz, Brian T. "Ultralow refractive index metamaterials and band gap structures at optical wavelengths." Diss., Connect to online resource, 2005. http://wwwlib.umi.com/cr/colorado/fullcit?p3190383.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Cross, Rachel Elizabeth. "Optical spectroscopy instrumentation for the characterisation of wide band gap materials." Thesis, Aberystwyth University, 2015. http://hdl.handle.net/2160/c30df606-68fb-4add-ad67-dffbcf0965d2.

Full text

Abstract:

This thesis presents work undertaken in the design, build, characterisation and first results of a new instrument for the optical characterisation of wide band gap materials by their luminescence. Optical spectroscopy is a promising method for investigating material properties due to its non-destructive nature and high sensitivity. The ability to relate to a material's optical properties to its structure and composition is highly desirable in Materials Physics applications. Spatial information is lost when measuring heterogeneous samples due to the convolution of spectral information from diff

APA, Harvard, Vancouver, ISO, and other styles

27

Benoit, Gilles Ph D. Massachusetts Institute of Technology. "Tunable micro-cavities in photonic band-gap yarns and optical fibers." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/36206.

Full text

Abstract:

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>Includes bibliographical references (leaves 134-140).<br>The vision behind this work is the fabrication of high performance innovative fiber-based optical components over kilometer length-scales. The optical properties of these fibers derive from their multilayer dielectric photonic band-gap structure that exhibits omnidirectional reflectivity. The theoretical tools needed to design, analyze and optimize such structures are introduced. We show that defect layers in these otherwise perio

APA, Harvard, Vancouver, ISO, and other styles

28

Gowda, Madhu H. "Optical characterization of wide-band gap bulk crystals and epitaxial layers." Fairfax, VA : George Mason University, 2008. http://hdl.handle.net/1920/3349.

Full text

Abstract:

Thesis (Ph.D.)--George Mason University, 2008.<br>Vita: p. 156. Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Title from PDF t.p. (viewed Jan. 11, 2009). Includes bibliographical references (p. 149-155). Also issued in print.

APA, Harvard, Vancouver, ISO, and other styles

29

Villeneuve, Alain. "Optical nonlinearities and applications of semiconductors near half the band gap." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/186035.

Full text

Abstract:

The nonlinear optical properties of bulk and quantum well semiconductor waveguides were measured as well as their time response near half the band gap. Experiments were performed on different semiconductors including the following bulk semiconductors GaAs, AlGaAs, InGaAlAs, and on GaAs/AlGaAs quantum well samples, to measure the two and three photon absorption, the free carrier cross section, and the nonlinear index of refraction. Also all-optical switching was demonstrated in a nonlinear directional coupler, and for the first time in a nonlinear X-switch. The switching exhibited high throughp

APA, Harvard, Vancouver, ISO, and other styles

30

Reynolds, Andrew Lawrence. "Modelling of photonic band gap materials for mm-wave and optical applications." Thesis, University of Glasgow, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325302.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Yang, Wenjie. "Characterising and understanding Au-hyperdoped Si for sub-band gap optical absorption." Phd thesis, Canberra, ACT : The Australian National University, 2018. http://hdl.handle.net/1885/154257.

Full text

Abstract:

The unparalleled technological maturity of silicon (Si) can be exploited to develop CMOS-compatible optoelectronics such as photodetectors and imaging arrays. However, the low-attenuation wavelengths commonly used in fibre-optics (up to 1650 nm) fall below the 1.12 eV band gap of Si (efficient absorption only occurs at wavelengths less than 1100 nm), thus requiring the realisation of sub-band gap photoresponse. A promising method to achieve this is to add an intermediate band within the band gap by incorporating appropriate impurities into the Si lattice at high concentrations (often beyond th

APA, Harvard, Vancouver, ISO, and other styles

32

Williamson, B. A. D. "Understanding the electronic and thermodynamic properties of wide band gap materials." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10047050/.

Full text

Abstract:

Wide band gap (Eg > 3.1 eV) semiconductors are ubiquitous in many present day industrial applications and environmental endeavors. In particular, wide band gap materials find use within photovoltaics, portable electronics, gas sensors, self-cleaning and thermochromic window coatings as well as photocatalysis to name a few. Despite the wide range of current applications, there are still many issues that disrupt advancements in this field. Within the area of transparent conductors (TCs), the dominant materials are all n-type which are themselves dominated by the flagship ITO (Sn-doped In2O3). Du

APA, Harvard, Vancouver, ISO, and other styles

33

Priest, Andrew Nicholas. "Inter-band magneto-optical studies of III-V semiconductors." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299229.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Bott, Erika. "Fock exchange in the augmented spherical waves method and the optical band gap." Phd thesis, [S.l. : s.n.], 1999. http://elib.tu-darmstadt.de/diss/000020/bandgap.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Li, Lain-Jong. "Probing the band gap structure of single-walled carbon nanotubes by optical spectroscopy." Thesis, University of Oxford, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.427632.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Pascual-Gonzalez, Cristina. "Processing-composition-structure effects on the optical band gap of KNbO3-based ceramics." Thesis, Sheffield Hallam University, 2017. http://shura.shu.ac.uk/18746/.

Full text

Abstract:

This present work is focused on band-gap engineering of solid-solutions based on KNbO3, which was proposed as a promising photoferroelectric (Grinberg et al., 2013). The strategy to narrow the band-gap of the parent KNbO3 (3.22 eV), relies on replacing Nb5+ by lower valence transition metals (Me3+) and K+1 by cations which maintain the compositions stoichiometric. Ceramic processing of KNbO3 by conventional route was optimised in order to minimise K losses, which leads to the formation of a hygroscopic secondary phase, K4Nb6O17. This phase impairs the structural integrity of the samples. In ad

APA, Harvard, Vancouver, ISO, and other styles

37

Pepenene, Refuoe Donald. "Macroscopic and Microscopic surface features of Hydrogenated silicon thin films." University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.

Full text

Abstract:

Magister Scientiae - MSc (Physics)<br>An increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials,

APA, Harvard, Vancouver, ISO, and other styles

38

McGlynn, Andrew G. "Optical and X-ray spectroscopy of wide band gap semiconductors and organic thin films." Thesis, Aberystwyth University, 2010. http://hdl.handle.net/2160/04bbda69-25aa-4feb-90e4-564dc66b3043.

Full text

Abstract:

This thesis reports upon synchrotron based luminescence studies of wide band gap semi-conductors and organic thin films. The optical and structural electronic properties of cubic and hexagonal boron nitride have been studied using X-ray Excited Optical Luminescence (XEOL) and Optically Detected X-ray Absorption Spectroscopy (OD-XAS). UV/visible emission was identified in both h-BN and c-BN with additional exciton related deep UV emission for the former. UV excited luminescence measurements were used to determine the band gap energies of h-BN and c-BN, these were found to be 5.96eV ± 0.04eV and

APA, Harvard, Vancouver, ISO, and other styles

39

Климов, Олексій Володимирович, Алексей Владимирович Климов, Oleksii Volodymyrovych Klymov, et al. "Raman investigation and electro-physical properties of II-VI wide-band gap films." Thesis, Publishing House of Bucharest University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/29353.

Full text

Abstract:

В даній роботі розглядались електро-фізичні властивості сполук групи А2В6 та їх дослідження за допомогою раманівської спектроскопії. При цитуванні документа, використовуйте посилання http://essuir.sumdu.edu.ua/handle/123456789/29353<br>В данной работе рассматривались электро-физические свойства соединений группы А2В6 и их исследования с помощью рамановского спектроскопии. При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/29353<br>In this work shown electro-physical properties of the compounds of group A2B6 and their research using Raman spectroscopy. Whe

APA, Harvard, Vancouver, ISO, and other styles

40

Kral, Zdenek. "Development of optical characterization methods for micro-and nano- scale planar photonic band gap structures." Doctoral thesis, Universitat Rovira i Virgili, 2009. http://hdl.handle.net/10803/8466.

Full text

Abstract:

The characterization of photonic band gap materials (Photonic Crystals) is a fundamental issue in the development of the technologies for their fabrication and future application. This Doctoral Thesis has dealt with the development of optical characterization methods and their implementation to planar photonic structures. According to the objectives established in the present work we have obtained several results that are concluded in the following paragraphs:<br/><br/> We have developed an experimental technique based on the Bragg diffraction in the near and middle infra red (IR) spec

APA, Harvard, Vancouver, ISO, and other styles

41

Hughes, Alison Frances. "A new theory of lasers with application to photonic band gap materials." Thesis, King's College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368127.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Tirpak, Olena. "INFLUENCE OF ELECTRON TRAPPING ON MINORITY CARRIER TRANSPORT PROPERTIES OF WIDE BAND GAP SEMICONDUCTORS." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3278.

Full text

Abstract:

Minority carrier transport properties and the effects of electron irradiation/injection were studied in GaN and ZnO containing dopants known to form acceptor states deep within the materials' bandgap. Minority carrier diffusion length and lifetime changes were investigated using Electron Beam Induced Current (EBIC) method, cathodoluminescence spectroscopy, spectral photoresponse and persistent photoconductivity measurements. It is shown that electron irradiation by the beam of a scanning electron microscope results in a significant increase of minority carrier diffusion length. These findings

APA, Harvard, Vancouver, ISO, and other styles

43

Sapkota, Gopal. "Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc499984/.

Full text

Abstract:

Various techniques to synthesize nanowires and nanotubes as a function of growth temperature and time were investigated. These include growth of nanowires by a chemical vapor deposition (CVD) system using vapor-liquid-solid (VLS) growth mechanism and electro-chemical synthesis of nanowires and nanotubes. Narrow band gap InSb Eg = 0.17 eV at room temp) nanowires were successively synthesized. Using a phase diagram, the transition of the nanowire from metallic- semiconducting- semi-metallic phase was investigated. A thermodynamic model is developed to show that the occurrence of native defects i

APA, Harvard, Vancouver, ISO, and other styles

44

Neff, Curtis Wayne. "Optical Properties of Superlattice Photonic Crystals." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/14108.

Full text

Abstract:

Photonic band gap materials, commonly referred to as photonic crystals (PCs), have been a topic of great interest for almost two decades due to their promise of unprecedented control over the propagation and generation of light. We report investigations of the optical properties of a new PC structure based upon a triangular lattice in which adjacent [i, j] rows of holes possess different properties, creating a superlattice (SL) periodicity. Symmetry arguments predicted and quot;band folding and quot; and band splitting behaviors, both of which are direct consequences of the new basis that con

APA, Harvard, Vancouver, ISO, and other styles

45

Culshaw, Ian Stephen. "Optical properties of microcavities and patterned waveguides." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.370053.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Ellis, Frederick Paa Kwesi. "Fabrication of Random Hole Optical Fiber Preforms by Silica Sol-Gel Processing." Thesis, Virginia Tech, 2004. http://hdl.handle.net/10919/31489.

Full text

Abstract:

Conventional fibers are comprised of a solid glass core and solid glass cladding often protected by a thin polymer sheath. The finely tuned difference in refractive indices, for step index-fibers, is achieved by doping the core with germanium or elements with similar effects. Holey fibers (including photonic crystal fibers) comprise of a pure silica core, and a pure but porous silica cladding of air holes [1]. This provides a huge difference in the refractive indices on the cladding and core without doping. This translates into radiation resistant fibers with very low losses and very robus

APA, Harvard, Vancouver, ISO, and other styles

47

Niedermeier, Christian Alexander. "Electronic structure, transport properties and doping of wide-band gap semiconducting oxides NixMg1-xO and BaSnO3." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/53824.

Full text

Abstract:

Wide-band gap semiconducting oxides combine high electrical conductivity with optical transparency and find important applications as transparent contacts in solar cells, energy-efficient smart windows and thin film transistors used in flat-panel displays for smartphones and tablets. Among the material family of transparent conducting oxides, In2O3, SnO2, ZnO and CdO are the most prominent examples which all exhibit excellent n-type conductivity. Transition metal oxides such as Cu2O, CuAlO2 and NiO were investigated for their p-type conductivity, which remains a great challenge to achieve in o

APA, Harvard, Vancouver, ISO, and other styles

48

Lukic-, Zrnic Reiko. "Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx." Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc5522/.

Full text

Abstract:

Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to extract the appropriate scattering mechanisms. For p-type samples, the dominant mechanism was ionized

APA, Harvard, Vancouver, ISO, and other styles

49

Shields, Philip Aldam. "The magneto-optical properties of semiconductors and the band structure of gallium nitride." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365335.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Rusli. "Optical and luminescence properties of hydrogenated amorphous carbon." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326704.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!