Relevant bibliographies by topics / Optical properties of semiconductors

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Optical properties of semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 May 2024

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Journal articles on the topic "Optical properties of semiconductors"

1

Yang, C. C., and S. Li. "Size Dependence of Optical Properties in Semiconductor Nanocrystals." Key Engineering Materials 444 (July 2010): 133–62. http://dx.doi.org/10.4028/www.scientific.net/kem.444.133.

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An extension of the classic thermodynamic theory to nanometer scale has generated a new interdisciplinary theory - nanothermodynamics. It is the critical tool for the investigation of the size-dependent physicochemical properties in nanocrystals. A simple and unified nanothermodynamic model for the melting temperature of nanocrystals has been established based on Lindemann’s criterion for the melting, Mott’s expression for the vibrational melting entropy, and Shi’s model for the size dependence of the melting point. The developed model has been extensively verified in calculating a variety of
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Alouani, M., L. Brey, and N. E. Christensen. "Calculated optical properties of semiconductors." Physical Review B 37, no. 3 (1988): 1167–79. http://dx.doi.org/10.1103/physrevb.37.1167.

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Ynduráin, Félix. "Optical properties of amorphous semiconductors." Solid State Communications 84, no. 1-2 (1992): 217–20. http://dx.doi.org/10.1016/0038-1098(92)90327-6.

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Ikonić, Z., and V. Milanović. "Handbook on semiconductors, volume 2: Optical properties of semiconductors." Microelectronics Journal 29, no. 7 (1998): 474. http://dx.doi.org/10.1016/s0026-2692(98)80014-1.

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Ruda, H. E., and A. Shik. "Optical properties of anisotropic porous semiconductors." Applied Physics Letters 99, no. 21 (2011): 213111. http://dx.doi.org/10.1063/1.3662400.

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Klingshirn, C. "Non-linear optical properties of semiconductors." Semiconductor Science and Technology 5, no. 6 (1990): 457–69. http://dx.doi.org/10.1088/0268-1242/5/6/001.

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Klingshirn, C. "Non-linear optical properties of semiconductors." Semiconductor Science and Technology 5, no. 9 (1990): 1006. http://dx.doi.org/10.1088/0268-1242/5/9/517.

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Tatarkiewicz, Jakub. "Optical Properties of Hydrogen-Implanted Semiconductors." Solid State Phenomena 1-2 (January 1991): 457–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.1-2.457.

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Steckl, A. J., and J. M. Zavada. "Optoelectronic Properties and Applications of Rare-Earth-Doped GaN." MRS Bulletin 24, no. 9 (1999): 33–38. http://dx.doi.org/10.1557/s0883769400053045.

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As discussed in the accompanying articles in this issue of MRS Bulletin, the optical properties of rare-earth (RE) elements have led to many important photonic applications, including solid-state lasers, components for telecommunications (optical-fiber amplifiers, fiber lasers), optical storage devices, and displays. In most of these applications, the host materials for the RE elements are various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared (IR) wavelengths, depending on the electronic transitions of the selected RE element and the excitation mechanism. U
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De Luca, Federico, Michele Ortolani, and Cristian Ciracì. "Free electron harmonic generation in heavily doped semiconductors: the role of the materials properties." EPJ Applied Metamaterials 9 (2022): 13. http://dx.doi.org/10.1051/epjam/2022011.

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Heavily doped semiconductors have emerged as low-loss and tunable materials for plasmonics at mid-infrared frequencies. We analyze the nonlinear optical response of free electrons and show how nonlinear optical phenomena associated with high electron concentration are influenced by the intrinsic properties of semiconductors, namely background permittivity and effective mass. We apply our recently developed hydrodynamic description that takes into account nonlinear contributions up to the third order, usually negligible for noble metals, to compare third-harmonic generation from InP, Ge, GaAs,
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Dissertations / Theses on the topic "Optical properties of semiconductors"

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Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

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This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A c
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Li, Qing. "Optical properties of III-nitride semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B30162488.

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OLBRIGHT, GREGORY RICHARD. "FEMTOSECOND DYNAMICS AND NONLINEAR EFFECTS OF ELECTRON-HOLE PLASMA IN SEMICONDUCTOR DOPED GLASSES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184091.

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The following is a comprehensive study of transient and steady-state nonlinear optical properties of semiconductor microcrystals embedded in a glass matrix (semiconductor doped glass). Transient thermal effects which give rise to longitudinal excitation discontinuities (i.e., kinks) that arise from partial sample switching in increasing absorption optical bistability are observed in a doped glass. The transient thermal effects occur on time scales of a few hundred milliseconds. Femtosecond and nanosecond laser pulses are employed to measure time-resolved and steady-state transmission and diffe
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McCormick, Elizabeth Joan McCormick. "Optical Properties of Two Dimensional Semiconductors." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1531907387651019.

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Oliva, Vidal Robert. "High-pressure optical and vibrational properties of InN and InGaN." Doctoral thesis, Universitat de Barcelona, 2016. http://hdl.handle.net/10803/400490.

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This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN) and indium gallium nitride (InGaN) at room and high-pressure conditions. For this purpose, we have employed spectroscopic tools such as absorption spectroscopy or Raman scattering in order to investigate a series of InN and InGaN thin films grown with different methods and on different substrates. For the high-pressure measurements, we have employed the diamond anvil cell technique. High-pressure optical absorption experiments on InN epilayers have allowed us to observe the direct-to-indire
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McGinnis, Brian Patrick. "Four-wave mixing and the study of optical nonlinearities in semiconductors and semiconductor quantum dots." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184890.

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This dissertation describes the study of various nonlinear optical effects in both bulk and quantum-confined semiconductors. Transverse effects in increasing absorption optical bistability are considered in bulk CdS for both single beam and wave mixing geometries. Measurement of the temporal response of BiI₃ quantum dots is described using degenerate four-wave mixing and explained theoretically. Finally, the experimental techniques developed to measure the one- and two-photon absorption coefficients of CdS quantum dots in glass are described along with the latest theoretical description and in
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Ferguson, Ian Thomas. "Optical properties of novel GaAs-based semiconductors." Thesis, University of St Andrews, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328125.

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Afshar, Abolfazl Mozaffari. "Optical properties of semiconductors quantum microcavity structures." Thesis, University of Sheffield, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298196.

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Wolverson, D. "Optical and electronic properties of disordered semiconductors." Thesis, University of Exeter, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379465.

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Ahmad, Anwaar. "Electrical and optical properties of lead phthalocyanine." Thesis, Lancaster University, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333877.

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Books on the topic "Optical properties of semiconductors"

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Martinez, G., ed. Optical Properties of Semiconductors. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-015-8075-5.

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1927-, Balkanski Minko, ed. Optical properties of semiconductors. New York, 1994.

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G, Martinez, and North Atlantic Treaty Organization. Scientific Affairs Division., eds. Optical properties of semiconductors. Kluwer Academic Publishers, 1993.

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Omar, Manasreh Mahmoud, and Jiang H. X, eds. III-nitride semiconductors: Optical properties. Taylor & Francis, 2002.

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Inamuddin, Mohd Imran Ahamed, Rajender Boddula, and Tariq Altalhi. Optical Properties and Applications of Semiconductors. CRC Press, 2022. http://dx.doi.org/10.1201/9781003188582.

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Kalt, Heinz. Optical Properties of III–V Semiconductors. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-58284-4.

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Helmut, Föll, ed. Porous semiconductors: Optical properties and applications. Springer, 2009.

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Hartmut, Haug, ed. Optical nonlinearities and instabilities in semiconductors. Academic Press, 1988.

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L, Sadowski Marcin, Potemski Marek, and Grynberg Marian, eds. Optical properties of semiconductor nanostructures. Kluwer Academic, 2000.

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E, Garmire, and Kost Alan Randal, eds. Nonlinear optics in semiconductors. Academic Press, 1999.

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Book chapters on the topic "Optical properties of semiconductors"

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Yu, Peter Y., and Manuel Cardona. "Optical Properties I." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-26475-2_6.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties II." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-26475-2_7.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties I." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03848-2_6.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties II." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03848-2_7.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties I." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03313-5_6.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties II." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03313-5_7.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties I." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-00710-1_6.

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Yu, Peter Y., and Manuel Cardona. "Optical Properties II." In Fundamentals of Semiconductors. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-00710-1_7.

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Razeghi, Manijeh. "Optical Properties of Semiconductors." In Fundamentals of Solid State Engineering. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-75708-7_10.

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Fu, Ying. "Optical Properties of Semiconductors." In Physical Models of Semiconductor Quantum Devices. Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7174-1_3.

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Conference papers on the topic "Optical properties of semiconductors"

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Garmire, Elsa. "Optical Nonlinearities Due to Carrier Transport in Semiconductors." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.md1.

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This paper describes a new class of optical nonlinearities which can be important in semiconductors. This nonlinearity relies on the motion of optically-excited carriers due to internal fields within the semiconductor. Such fields can exist. for example. in semiconductor depletion regions. The charge motion sets up a resultant space charge which acts opposite to the internal fields, reducing their value. The resultant decrease in electric field changes the absorption and/or refractive index through electro-absorption, electro-refraction, electro-optic effect or quantum confined Stark effect, d
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Chemla, D. S. "Optical Nonlinearities in Semiconductors." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.tua1.

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Nonlinear optical processes in semiconductors presents some very specific aspects which originate from the nature and properties of elementary electronic excitations in these materials. In this talk we discuss the origins and characteristics of nonlinear optical effects in semiconductors and we illustrate our presentation with selected experimental results.
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Miller, A., and R. J. Manning. "Transient Optical Nonlinearities in Multiple Quantum Well Structures: Four Wave Mixing, Anisotropic Carrier Diffusion and the Quantum Confined Stark Effect." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.tub3.

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Multiple quantum well (MQW) semiconductors can exhibit a number of nonlinear optical phenomena associated with the clearly resolved, room temperature excitons. These are of practical interest for optically bistable devices, mode-locking of semiconductor lasers and phase conjugation. For instance, refractive nonlinearities associated with the saturation of the exciton can be very sensitive [1]. The quantum confined Stark effect can also be employed to produce optical nonlinearities at low power [2,3].
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Kondo, Takashi, Kaoru Morita, and Ryoichi Ito. "Second-Order Nonlinear Optical Properties of Wide-Bandgap Semiconductors." In Nonlinear Optics: Materials, Fundamentals and Applications. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/nlo.1996.nthe.23.

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There have been growing interest in III-V semiconductors as promising nonlinear optical materials for frequency conversion devices. These devices are based on quasi-phase-matching that is achieved by spatially modulating large quadratic optical nonlinearities of semiconductors [1–5]. In order to exploit the large nonlinearities of semiconductor epitaxial films, we have developed two methods to determine the nonlinear optical coefficients of thin films by reflected second-harmonic measurements [6,7], In this paper, we will present nonlinear optical properties of wide-bandgap semiconductors, A1P
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Choquette, Kent D. "Third-Order Optical Susceptibility in n-i-p-i GaAs Arising from Nonparabolic Electronic Subbands." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.md3.

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Semiconductor superlattices allow the development of materials with enhanced nonlinear optical characteristics over those found in bulk semiconductors. For both doping and compositional superlattices a one-dimensional periodic potential is introduced which modifies the electronic energy band structure. This paper reports the investigation of the optimization of nonparabolic subbands in compensated short-period GaAs doping superlattices for enhancement of a nonresonant third-order optical susceptibility. This nonlinear phenomenon would be useful for nonlinear optical applications requiring long
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Sturm, Chris, Rüdiger Schmidt-Grund, Ronny Kaden, et al. "Optical Properties of Cylindrite." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730468.

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Podlesnik, D. V., H. H. Gilgen, C. J. Chen, and R. M. Osgood. "Effects of Optical Properties on Wet Etching of Semiconductors." In Microphysics of Surfaces, Beams, and Adsorbates. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.wd3.

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Many laser microchemical processes, for example, metal photodeposition and semiconductor annealing, are influenced by a surface electromagnetic field which results from the interaction of the incident light with the surface. This effect has not been extensively documented in laser etching of semiconductors. In this talk, we will show that such effects can play an important role in determining the etch profile and surface structure obtained from wet etching of semiconductors. In particular, the formation of surface ripples and the fabrication of high-aspect-ratio via holes will be discussed.
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Smirl, Arthur L., J. Dubard, George C. Valley, and Thomas F. Boggess. "Picosecond Photorefractive and Free-Carrier Nonlinearities in Semiconductors." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.mc3.

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A variety of picosecond time-resolved two-beam coupling, transient grating and degenerate-four-wave mixing techniques are used to investigate the nonlinear loss and to measure the strength, formation and decay of photorefractive gratings written in GaAs and InP:Fe and of free-carrier gratings written in Si, GaAs, and InP by 43-ps pulses at a wavelength of 1 μm. We present data and numerical calculations as a function of fluence, time delay, pump-to-probe ratio, pump polarization, analyzer angle and crystal orientation. We observe photorefractive gains of a few percent at fluences of a few pJ/μ
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Pistol, Mats-Erik, Maria Gerling, Anders Gustafsson, et al. "Optical properties of InP/GaAs/InP strained layers." In Semiconductors '92, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1992. http://dx.doi.org/10.1117/12.137608.

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Yuen, S. Y., and P. A. Wolff. "Free Carrier Induced Third Order Optical Nonlinearities in Semiconductors*." In Nonlinear Optical Properties of Materials. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.tua2.

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We have studied a variety of free carrier induced optical nonlinearities in III-V and II-VI semiconductors and compounds by four-wave mixing experiments with Q-switched CO2 lasers. Third order susceptibilities χ(3) in excess of 10-3 esu with picosecond recovery times have been observed. Because of their rapid recovery, these nonlinear processes can operate at high laser intensities without saturating. The dispersion of the susceptibility provides a easy method to determine relaxation times in the 0.1 to 5 ps. range.
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Reports on the topic "Optical properties of semiconductors"

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Kim, Doseok. Nonlinear optical properties of atomic vapor and semiconductors. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/491564.

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Knipp, Peter A. Optical and Transport Properties of Metallic and Semiconductor Nanostructures. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada270009.

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Hubert, C. A., J. A. Lubin, W. H. Yang, and T. E. Huber. Synthesis and Optical Properties of Dense Semiconductor-Dielectric Nanocomposites. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada271304.

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Lambrecht, Walter R. Magneto-Optical Properties of Hybrid Magnetic Material Semiconductor Nanostructures. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada472402.

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Agio, Mario. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/806586.

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Budai, J. D., C. W. White, S. P. Withrow, R. A. Zuhr, and J. G. Zhu. Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/425296.

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Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Electrical and Optical Response Properties of MEH-PPV Semiconductor Polymer Schottky Diodes. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada548948.

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Afrin, Shakila. Investigation of Electronic and Optical Properties of 2-Dimensional Semiconductor Tin Selenide (SnSe) Thin Films. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.6738.

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Yao, Huade W. Optical Properties of GaN and Other III-Nitride Semiconductor Materials Studied by Variable Angle Spectroscopic Ellipsometry. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada391193.

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Boggess, Thomas F. Electronic, Optical and Structural Properties of 6.1 Angstrom III-V Semiconductor Heterostructures for High-Performance Mid-Infrared Lasers. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada421467.

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