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Dissertations / Theses on the topic 'Optical properties of semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

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1

Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

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This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A c

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2

Li, Qing. "Optical properties of III-nitride semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B30162488.

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3

OLBRIGHT, GREGORY RICHARD. "FEMTOSECOND DYNAMICS AND NONLINEAR EFFECTS OF ELECTRON-HOLE PLASMA IN SEMICONDUCTOR DOPED GLASSES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184091.

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The following is a comprehensive study of transient and steady-state nonlinear optical properties of semiconductor microcrystals embedded in a glass matrix (semiconductor doped glass). Transient thermal effects which give rise to longitudinal excitation discontinuities (i.e., kinks) that arise from partial sample switching in increasing absorption optical bistability are observed in a doped glass. The transient thermal effects occur on time scales of a few hundred milliseconds. Femtosecond and nanosecond laser pulses are employed to measure time-resolved and steady-state transmission and diffe

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4

McCormick, Elizabeth Joan McCormick. "Optical Properties of Two Dimensional Semiconductors." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1531907387651019.

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5

Oliva, Vidal Robert. "High-pressure optical and vibrational properties of InN and InGaN." Doctoral thesis, Universitat de Barcelona, 2016. http://hdl.handle.net/10803/400490.

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This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN) and indium gallium nitride (InGaN) at room and high-pressure conditions. For this purpose, we have employed spectroscopic tools such as absorption spectroscopy or Raman scattering in order to investigate a series of InN and InGaN thin films grown with different methods and on different substrates. For the high-pressure measurements, we have employed the diamond anvil cell technique. High-pressure optical absorption experiments on InN epilayers have allowed us to observe the direct-to-indire

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6

McGinnis, Brian Patrick. "Four-wave mixing and the study of optical nonlinearities in semiconductors and semiconductor quantum dots." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184890.

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This dissertation describes the study of various nonlinear optical effects in both bulk and quantum-confined semiconductors. Transverse effects in increasing absorption optical bistability are considered in bulk CdS for both single beam and wave mixing geometries. Measurement of the temporal response of BiI₃ quantum dots is described using degenerate four-wave mixing and explained theoretically. Finally, the experimental techniques developed to measure the one- and two-photon absorption coefficients of CdS quantum dots in glass are described along with the latest theoretical description and in

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7

Ferguson, Ian Thomas. "Optical properties of novel GaAs-based semiconductors." Thesis, University of St Andrews, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328125.

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8

Afshar, Abolfazl Mozaffari. "Optical properties of semiconductors quantum microcavity structures." Thesis, University of Sheffield, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298196.

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9

Wolverson, D. "Optical and electronic properties of disordered semiconductors." Thesis, University of Exeter, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379465.

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10

Ahmad, Anwaar. "Electrical and optical properties of lead phthalocyanine." Thesis, Lancaster University, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333877.

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11

Chan, Yung, and 陳勇. "Optical functions of wide band gap semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B45015338.

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12

Mohamed, Mona Bakr. "Metallic and semiconductor nanoparticles : synthesis, characterization and femtosecond laser spectroscopic studies." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/31057.

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13

Priest, Andrew Nicholas. "Inter-band magneto-optical studies of III-V semiconductors." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299229.

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14

Feng, Guofu. "Optical studies of ion-bombarded gallium arsenide." Diss., Virginia Polytechnic Institute and State University, 1989. http://hdl.handle.net/10919/54357.

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The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered

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15

LEE, YONG HEE. "ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES." Diss., The University of Arizona, 1986. http://hdl.handle.net/10150/183920.

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This dissertation studies the physics of room-temperature optical nonlinearities in GaAs and their application to the optical logic gates. The microscopic origins of the room-temperature optical nonlinearities in GaAs are investigated experimentally and theoretically. The data of nonlinear absorption measurement are analyzed in the framework of a semiconductor plasma theory in combination with excitation-dependent line broadening. The importance of the plasma screening of the continuum-state Coulomb enhancement and band filling are emphasized for GaAs at room temperature. Optical bistability a

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16

Cole, Eric D. "On the feasibility and application of optical p to n inversion." Thesis, Virginia Tech, 1985. http://hdl.handle.net/10919/45719.

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The feasibility of achieving carrier inversion of a properly doped crystal via optical excitation is studied. This process involves a host substrate doped with deep donors for n-type light characteristic and compensated by a shallow acceptor for p-type characteristic in the dark. This substrate is analyzed using well-known semiconductor equations. In addition conditions which must exist for carrier inversion are also specified. The solutions found are applied to a realistic set of dopants for illustrative purposes as well as indication of feasibility range. This inversion technique may possibl

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17

Parkinson, Mark. "Structural and optical properties in porous nanostructured semiconductors." Thesis, De Montfort University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391476.

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18

Helbers, Andrew J. "Magneto-Optical Properties of Rare-Earth Doped Semiconductors." Thesis, Lehigh University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10623187.

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19

Venanzi, Tommaso. "Optical and infrared properties of atomically thin semiconductors." Technische Universität Dresden, 2020. https://tud.qucosa.de/id/qucosa%3A73364.

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Two-dimensional semiconductors are a topic of intense research and very attractive materials for new developments in different elds of semiconductor technology. These materials are promising candidates to satisfy the demand for faster and more compact electronics. They make new technological possibilities feasible, such as the realization and the commercial development of exible and semitransparent electronics. For these purposes, a deep knowledge of their electronic and optical properties is required. Besides the technological interest, numerous discoveries of fundamental physics were made w

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20

Wang, Xiaohu, and 王小虎. "Optical properties of direct bandgap semiconductors : from bulk to low dimensional structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2015. http://hdl.handle.net/10722/212620.

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Optical and electrical properties of solids have a close relationship with their dimensionalities. In this thesis, optical properties of several direct bandgap materials with different dimensionalities were investigated in detail. In three dimensional bulk zinc oxide (ZnO) single crystal, two electron satellite transition (TES) was examined in terms of a radiative Auger effect. On the basis of experimental spectral data, a model was proposed to interpret temperature dependence of its integrated intensity. Meanwhile, the phonon coupling with various excitonic transitions were discussed as a fun

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21

Niles, Julian C. "The structural, electronic, vibrational and optical properties of C₇₈ isomers." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/30513.

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22

Lowry, Curtis Wayne. "Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186295.

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Nonlinear optical properties of passive and active semiconductors are investigated experimentally and theoretically. Improvement of switching cycle time in optical nonlinear etalons to 40 ps is demonstrated, and strained-layer InGaAs/GaAs quantum well material is used in an asymmetric etalon to greatly improve switching power and contrast. Coherent energy transfer (CET) induced by injection of an external light field is demonstrated in a GaAs quantum well vertical-cavity surface-emitting laser (VCSEL). The evolution of CET induced asymmetric gain with increasing injected power is investigated

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23

Fluegel, Brian Darrius. "Sub-relaxation and sub-dephasing dynamics of light-induced polarization in semiconductors." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/185839.

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Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then emplo

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24

Wu, Yuan-Yen. "Optical Nonlinearities in Semiconductors for Limiting." Thesis, University of North Texas, 1990. https://digital.library.unt.edu/ark:/67531/metadc331203/.

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I have conducted detailed experimental and theoretical studies of the nonlinear optical properties of semiconductor materials useful for optical limiting. I have constructed optical limiters utilizing two-photon absorption along with photogenerated carrier defocusing as well as the bound electronic nonlinearity using the semiconducting material ZnSe. I have optimized the focusing geometry to achieve a large dynamic range while maintaining a low limiting energy for the device. The ZnSe monolithic optical limiter has achieved a limiting energy as low as 13 nJ (corresponding to 300W peak power) a

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25

Sweet, Julian. "RADIATIVE COUPLING AND DECAY PROPERTIES OF QUANTUM CONFINED SEMICONDUCTORS." Diss., The University of Arizona, 2009. http://hdl.handle.net/10150/194915.

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Several contemporary research topics on the subject of light-matter coupling are addressed. Through a variety of experimental methods, the emissive and carrier correlation properties of both quantum dots (QD) and quantum wells (QW) are explored.The radiative decay properties of self-assembled indium arsenide (InAs) quantum dots grown by molecular beam epitaxy (MBE) are discussed. The measurement of radiative lifetime is used to determine dipole moment. In addition, evidence is presented of radiative lifetime reduction for quasi-resonant and strictly resonant time-resolved measurements. This le

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26

Panda, Sudhira. "Quantum confined stark effect and optical properties in quantum wells." Thesis, Hong Kong : University of Hong Kong, 1998. http://sunzi.lib.hku.hk/hkuto/record.jsp?B19324303.

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27

Sieberhagen, Rheinhardt Hendrik. "Optical characterization of semiconductors using photo reflection spectroscopy." Diss., Pretoria : [s.n.], 2002. http://upetd.up.ac.za/thesis/available/etd-11242005-142711/.

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28

Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

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29

Vaughn, Mark Douglas. "Optical subcarrier multiplexed signal processing using semiconductor optical amplifiers." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/13327.

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30

Halliday, D. P. "Optical and electrical properties of III-V compound semiconductors." Thesis, University of Nottingham, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376179.

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31

Birkett, M. "Optical properties of earth-abundant semiconductors for renewable energy." Thesis, University of Liverpool, 2016. http://livrepository.liverpool.ac.uk/3003725/.

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The research described primarily addresses the experimental determination of optical properties in emerging photovoltaic (PV) materials. Work proceeds with two specific aims: to consolidate and clarify experimental practice on the determination of optical properties in polycrystalline systems, then to apply any findings in investigations of the relatively unstudied semiconductors copper nitride and copper antimony sulphide, which fulfil many of the requirements for next generation PV materials: earth-abundance, scalability, bipolar doping, near-optimal band gaps, strong absorption, and benefic

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32

Sloanes, Trefor J. "Measurement and application of optical nonlinearities in indium phosphide, cadmium mercury telluride and photonic crystal fibres." Thesis, University of St Andrews, 2009. http://hdl.handle.net/10023/723.

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The two-photon absorption (TPA) coefficient is measured in indium phosphide (InP) using femtosecond pulses to be 45cm/GW at 1.32μm. Nanosecond pulses are subsequently used to find the free-carrier refractive index cross-section, σ_r, and the free-carrier absorption coefficient, σ_fca. The quantity βσ_r is measured to be -113x10⁻²ºcm⁴/GW at 1.064μm and -84x10⁻²ºcm⁴/GW at 1.534μm. At 1.064μm, with β assumed to be 22cm/GW, the value suggested by theory, σ_r is -5.1x10⁻²ºcm³. Similarly, at 1.534μm, assuming β to be 20cm/GW gives a σ_r value of -4.1x10⁻²ºcm³. Due to refraction affecting the measure

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33

Zacharias, Marios. "Optical properties of semiconductors at finite temperatures from first principles." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:4fad686d-c675-44e6-85c7-2725e6598ca5.

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In this thesis we develop a new first-principles method for the calculation of optical absorption spectra and band structures in semiconductors and insulators at finite tem- peratures. The theoretical framework of our methodology originates back to 1950s in two pivotal research papers by F. Williams and M. Lax. Here, we expand the scope of the pioneering works by Williams and Lax, and we present a new theory of phonon- assisted optical absorption and temperature-dependent band structures. We demon- strate that our technique is highly efficient and simple to the point that a single calcu- latio

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34

Gopir, Geri Kibe Ak. "Electronic and optical properties of III-V heterostructures." Thesis, University of Newcastle Upon Tyne, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.336297.

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35

Azim-Araghi, Mohammad Esmaeil. "Electrical, optical and gas sensor properties of chloroaluminium (ClAlPc)." Thesis, Lancaster University, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.387649.

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36

Choy, Chik-ho. "Optical modulation properties of interdiffused III-V semiconductor quantum wells /." Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B18061862.

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37

蔡植豪 and Chik-ho Choy. "Optical modulation properties of interdiffused III-V semiconductor quantum wells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31213030.

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38

Xu, Chunchuan. "Correlation of electrical and optical properties of CdGeAs₂." Morgantown, W. Va. : [West Virginia University Libraries], 2007. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=5059.

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Thesis (Ph. D.)--West Virginia University, 2007.<br>Title from document title page. Document formatted into pages; contains xi, 120 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 117-120).

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39

Woodall, Milton Andrew. "Nonlinear Absorption Techniques and Measurements in Semiconductors." Thesis, North Texas State University, 1985. https://digital.library.unt.edu/ark:/67531/metadc331299/.

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We have conducted a detailed experimental and theoretical study of nonlinear absorption in semiconductors. Experimental measurements were made on a variety of materials at wavelengths of 1.06 and 0.53 microns using a picosecond Nd:YAG laser. Both two- and three-photon processes were investigated. Values of nonlinear absorption coefficients extracted from these measurements show excellent agreement with recent theory and scaling rules. Our theoretical investigation has been carried out for two-, three-,and n-photon absorption, for both continuous and pulsed sources. Expressions are obtained fo

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40

Wei, Zhifeng, and 魏志鋒. "The optical response of semiconductor self-assembled quantum dots." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37098202.

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41

Tran, Tuyen K. "Optical properties of II-VI semiconductor materials and superlattice structures." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/30929.

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42

Nitsche, Robert. "Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films." Doctoral thesis, [S.l.] : [s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=979835186.

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43

Nitsche, Robert. "Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2006. http://nbn-resolving.de/urn:nbn:de:swb:14-1147356837431-39487.

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We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica

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44

Hughes, James L. P. "Linear and nonlinear optical properties of semiconductors, theory and calculations." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0010/NQ41441.pdf.

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45

Lee, M. E. "Crystallographic, optical and electrical properties of some* ?? defect chalocpyrite semiconductors." Thesis, University of Nottingham, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.353559.

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46

Luckert, Franziska. "Optical properties of the chalcopyrite semiconductors CuInSe₂, CuInS₂ and CuGaSe₂." Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=25805.

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CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. These ternary compounds exhibit favourable properties, such as direct band gaps and high absorption coefficients, for application as absorber layers in thin-film solar cells. Recently Cu(In,Ga)Se₂ based photovoltaic devices have demonstrated conversion efficiencies of 20.3 % which is the highest amongst polycrystalline thin-film solar cell technologies. This thesis describes a study of excitonic recombination processes in high quality CuInSe₂, CuInS₂ and CuGaSe₂ single crystals using photoluminesce

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47

Canto, Edesly J. "Picosecond degenerate four-wave mixing in semiconductors." Thesis, University of North Texas, 1990. https://digital.library.unt.edu/ark:/67531/metadc798147/.

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This study reports on a variety of experimental and theoretical studies conducted in ZnSe, CdTe, and in semiconductor-doped glasses. The transient picosecond degenerate four-wave mixing (DFWM) experiments performed in these II-VI direct-gap semiconductors are part of our efforts to understand the picosecond dynamics of the free-carriers generated via two and three-photon absorption.

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48

Siochi, Ramon Alfredo Carvalho. "Optical characterization of processed gallium arsenide." Diss., Virginia Tech, 1990. http://hdl.handle.net/10919/39851.

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49

Rochemont, Pierre de. "The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions /." Thesis, McGill University, 1986. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=66009.

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50

Schucan, Gian-Mattia. "Generation of squeezed light in semiconductors." Thesis, University of Oxford, 1999. http://ora.ox.ac.uk/objects/uuid:417b1d31-8d25-42db-b707-32bd460b4183.

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We present experimental studies based on all three methods by which the generation of squeezed light in semiconductors has thus far been demonstrated experimentally: Fourwave mixing, multi-photon absorption and direct generation at the source. Four-wave mixing was used to generate femtosecond-pulsed quadrature squeezed light by cross-phase modulation in single-crystal hexagonal CdSe at wavelengths between 1.42 and 1.55 μm. We measured 0.4 dB squeezing (1.1 dB is inferred at the crystal) using 100 fs pulses. The wavelength and the intensity dependence, as well as variations in the local oscilla

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