Log in

Relevant bibliographies by topics / Optical properties of semiconductors / Journal articles

To see the other types of publications on this topic, follow the link: Optical properties of semiconductors.

Journal articles on the topic 'Optical properties of semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Optical properties of semiconductors.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Yang, C. C., and S. Li. "Size Dependence of Optical Properties in Semiconductor Nanocrystals." Key Engineering Materials 444 (July 2010): 133–62. http://dx.doi.org/10.4028/www.scientific.net/kem.444.133.

Full text

Abstract:

An extension of the classic thermodynamic theory to nanometer scale has generated a new interdisciplinary theory - nanothermodynamics. It is the critical tool for the investigation of the size-dependent physicochemical properties in nanocrystals. A simple and unified nanothermodynamic model for the melting temperature of nanocrystals has been established based on Lindemann’s criterion for the melting, Mott’s expression for the vibrational melting entropy, and Shi’s model for the size dependence of the melting point. The developed model has been extensively verified in calculating a variety of

APA, Harvard, Vancouver, ISO, and other styles

2

Alouani, M., L. Brey, and N. E. Christensen. "Calculated optical properties of semiconductors." Physical Review B 37, no. 3 (1988): 1167–79. http://dx.doi.org/10.1103/physrevb.37.1167.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Ynduráin, Félix. "Optical properties of amorphous semiconductors." Solid State Communications 84, no. 1-2 (1992): 217–20. http://dx.doi.org/10.1016/0038-1098(92)90327-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Ikonić, Z., and V. Milanović. "Handbook on semiconductors, volume 2: Optical properties of semiconductors." Microelectronics Journal 29, no. 7 (1998): 474. http://dx.doi.org/10.1016/s0026-2692(98)80014-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Ruda, H. E., and A. Shik. "Optical properties of anisotropic porous semiconductors." Applied Physics Letters 99, no. 21 (2011): 213111. http://dx.doi.org/10.1063/1.3662400.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Klingshirn, C. "Non-linear optical properties of semiconductors." Semiconductor Science and Technology 5, no. 6 (1990): 457–69. http://dx.doi.org/10.1088/0268-1242/5/6/001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Klingshirn, C. "Non-linear optical properties of semiconductors." Semiconductor Science and Technology 5, no. 9 (1990): 1006. http://dx.doi.org/10.1088/0268-1242/5/9/517.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Tatarkiewicz, Jakub. "Optical Properties of Hydrogen-Implanted Semiconductors." Solid State Phenomena 1-2 (January 1991): 457–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.1-2.457.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Steckl, A. J., and J. M. Zavada. "Optoelectronic Properties and Applications of Rare-Earth-Doped GaN." MRS Bulletin 24, no. 9 (1999): 33–38. http://dx.doi.org/10.1557/s0883769400053045.

Full text

Abstract:

As discussed in the accompanying articles in this issue of MRS Bulletin, the optical properties of rare-earth (RE) elements have led to many important photonic applications, including solid-state lasers, components for telecommunications (optical-fiber amplifiers, fiber lasers), optical storage devices, and displays. In most of these applications, the host materials for the RE elements are various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared (IR) wavelengths, depending on the electronic transitions of the selected RE element and the excitation mechanism. U

APA, Harvard, Vancouver, ISO, and other styles

10

De Luca, Federico, Michele Ortolani, and Cristian Ciracì. "Free electron harmonic generation in heavily doped semiconductors: the role of the materials properties." EPJ Applied Metamaterials 9 (2022): 13. http://dx.doi.org/10.1051/epjam/2022011.

Full text

Abstract:

Heavily doped semiconductors have emerged as low-loss and tunable materials for plasmonics at mid-infrared frequencies. We analyze the nonlinear optical response of free electrons and show how nonlinear optical phenomena associated with high electron concentration are influenced by the intrinsic properties of semiconductors, namely background permittivity and effective mass. We apply our recently developed hydrodynamic description that takes into account nonlinear contributions up to the third order, usually negligible for noble metals, to compare third-harmonic generation from InP, Ge, GaAs,

APA, Harvard, Vancouver, ISO, and other styles

11

BANFI, G. P., V. DEGIORGIO, D. FORTUSINI, and H. M. TAN. "BELOW BAND-GAP NONLINEAR OPTICAL PROPERTIES OF SEMICONDUCTOR-DOPED GLASSES." Journal of Nonlinear Optical Physics & Materials 05, no. 02 (1996): 205–22. http://dx.doi.org/10.1142/s0218863596000167.

Full text

Abstract:

Through nonlinear transmission and wave-mixing measurements. combined with structural data from neutron scattering, we obtain the below band-gap third-order susceptibility χ(3) (both imaginary and real part) and the refractive-index-change per carrier of semiconductor nanocrystals embedded in a glass matrix. Our data covers a range of crystal radii between 2 and 14 nm, and a range of ratios y=Eg /(ħω), where Eg is the energy gap of the semiconductor and ħω is the energy of the incident photon, between 1.1 and 1.9. The magnitude of χ(3) and its dependence on y are comparable to those of related

APA, Harvard, Vancouver, ISO, and other styles

12

Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

Full text

Abstract:

Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of

APA, Harvard, Vancouver, ISO, and other styles

13

Orsini, Andrea, and Stefano Salvatori. "Electrical, Optical, and Transport Properties of Semiconductors." Nanomaterials 13, no. 19 (2023): 2615. http://dx.doi.org/10.3390/nano13192615.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Handa, Taketo, Hirokazu Tahara, Tomoko Aharen, and Yoshihiko Kanemitsu. "Large negative thermo-optic coefficients of a lead halide perovskite." Science Advances 5, no. 7 (2019): eaax0786. http://dx.doi.org/10.1126/sciadv.aax0786.

Full text

Abstract:

Lead halide perovskites are promising semiconductors for high-performance photonic devices. Because the refractive index determines the optimal design and performance limit of the semiconductor devices, the refractive index and its change upon external modulations are the most critical properties for advanced photonic applications. Here, we report that the refractive index of halide perovskite CH3NH3PbCl3 shows a distinct decrease with increasing temperature, i.e., a large negative thermo-optic coefficient, which is opposite to those of conventional inorganic semiconductors. By using this nega

APA, Harvard, Vancouver, ISO, and other styles

15

Sarem, A., B. J. Kowalski, and B. A. Orlowski. "Optical properties of Fe-based semimagnetic semiconductors." Journal of Physics: Condensed Matter 2, no. 41 (1990): 8173–87. http://dx.doi.org/10.1088/0953-8984/2/41/005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Zhou, Y. K., M. S. Kim, X. J. Li, et al. "Optical properties of GaN-based magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5743—S5748. http://dx.doi.org/10.1088/0953-8984/16/48/040.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Cohen, Marvin L., James R. Chelikowsky, and Frank Herman. "Electronic Structure and Optical Properties of Semiconductors." Physics Today 43, no. 2 (1990): 125–26. http://dx.doi.org/10.1063/1.2810461.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Forouhi, A. R., and I. Bloomer. "Optical properties of crystalline semiconductors and dielectrics." Physical Review B 38, no. 3 (1988): 1865–74. http://dx.doi.org/10.1103/physrevb.38.1865.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Benoit ála Guillaume, C. "Optical properties of II–VI semimagnetic semiconductors." Journal of Crystal Growth 86, no. 1-4 (1988): 522–27. http://dx.doi.org/10.1016/0022-0248(90)90770-l.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Tischer, Ingo, Matthias Hocker, Benjamin Neuschl, et al. "Optical properties of defects in nitride semiconductors." Journal of Materials Research 30, no. 20 (2015): 2977–90. http://dx.doi.org/10.1557/jmr.2015.273.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Wang, Xue Yan, Jian Bang Zheng, Xiao Jiang Li та Chong De Cao. "Intrinsic Electronic Structures and Optical Anisotropy of α- and β-Phase Copper Phthalocyanine Molecular Crystals". Applied Mechanics and Materials 864 (квітень 2017): 133–41. http://dx.doi.org/10.4028/www.scientific.net/amm.864.133.

Full text

Abstract:

Electronic structures and optical anisotropy of α- and β-phase copper phthalocyanine (CuPc) molecular crystals have been systemically investigated by first-principles calculations based on Density Functional Theory (DFT). Both crystals were shown to be small gap organic semiconductors with relatively flat and dispersionless bands. The α-CuPc was a direct band gap semiconductor, whereas the β-CuPc was an indirect band gap semiconductor. The analysis of Partial Density of States (PDOS) showed that the top of valance band was mainly contributed by N 2p and C 2p states; the bottom of the conductio

APA, Harvard, Vancouver, ISO, and other styles

22

Sánchez-Vergara, Guevara-Martínez, Arreola-Castillo, and Mendoza-Sevilla. "Fabrication of Hybrid Membranes Containing Nylon-11 and Organic Semiconductor Particles with Potential Applications in Molecular Electronics." Polymers 12, no. 1 (2019): 9. http://dx.doi.org/10.3390/polym12010009.

Full text

Abstract:

Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular semiconductors were manufactured by high-vacuum evaporation followed by thermal relaxation. Initially, and with the aim of obtaining semiconductor particles, bulk heterojunction (BHJ) was carried out using green chemistry techniques between the zinc phthalocyanine (ZnPc) an

APA, Harvard, Vancouver, ISO, and other styles

23

Mayén-Hernández, Sandra Andrea, David Santos-Cruz, Francisco de Moure-Flores, et al. "Optical, Electrical and Photocatalytic Properties of the Ternary SemiconductorsZnxCd1-xS,CuxCd1-xSandCuxZn1-xS." International Journal of Photoenergy 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/158782.

Full text

Abstract:

The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloysZnxCd1-xS,CuxCd1-xSandCuxZn1-xSwere investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an a

APA, Harvard, Vancouver, ISO, and other styles

24

Pei, Woye, Zhiren Xiong, Yingjia Liu, et al. "An Optical Spectroscopic Study of Air-Degradation of van der Waals Magnetic Semiconductor Cr2Ge2Te6." Magnetochemistry 9, no. 4 (2023): 104. http://dx.doi.org/10.3390/magnetochemistry9040104.

Full text

Abstract:

Two-dimensional (2D) magnetic semiconductors exhibit unique combination of electronic and magnetic properties, holding great promise in potential applications such as spintronics and magneto-optics. However, many of them are air-sensitive, and their properties can be significantly altered upon exposure to air. Here, we showed an optical spectroscopic investigation of the effects of air-degradation on few-layered van der Waals (vdW) magnetic semiconductor Cr2Ge2Te6. It was found that although the partially degraded few-layered Cr2Ge2Te6 showed a significant Raman redshift and a split of Eg peak

APA, Harvard, Vancouver, ISO, and other styles

25

Tripathi, S. K. "Inorganic/Organic Hybrid Nanocomposite and its Device Applications." Solid State Phenomena 201 (May 2013): 65–101. http://dx.doi.org/10.4028/www.scientific.net/ssp.201.65.

Full text

Abstract:

VI semiconductors are promising nanomaterials for applications as window layers in low-cost and high-efficiency thin film solar cells. These nanoparticles are considered to be the model systems for investigating the unique optical and electronic properties of quantum-confined semiconductors. The electrical and optical properties of polymers are improved by doping with semiconductor materials and metal ions. In particular, nanoparticle-doped polymers are considered to be a new class of organic materials due to their considerable modification of physical properties. In this paper, I review the p

APA, Harvard, Vancouver, ISO, and other styles

26

Srivani, Dr Alla, Gurram Vasanth, Dr GVS Subbaroy Sharma, M. Srinivasa Rao, and Dr P. Ramesh. "Advanced Semiconductor Alloy Alxin1-Xp for Engineering and Medicine." Journal of Community Pharmacy Practice, no. 25 (September 14, 2022): 1–5. http://dx.doi.org/10.55529/jcpp.25.1.5.

Full text

Abstract:

Doped Advanced semiconductor materials with different properties are useful for early diagnosis and improved treatment in medical research. This is essential for advanced medical technology and lower mortality rates. New research on impurity-doped nano crystals is important. These dopants can directly affect electron transport in semiconductors, tune the optical properties of nano materials in desirable ways, and impart specific properties to the host. In this research report, we first discuss the factors that need to be considered to systematically control the production of these doped semico

APA, Harvard, Vancouver, ISO, and other styles

27

Ohmer, Melvin C., and Ravindra Pandey. "Emergence of Chalcopyrites as Nonlinear Optical Materials." MRS Bulletin 23, no. 7 (1998): 16–22. http://dx.doi.org/10.1557/s0883769400029031.

Full text

Abstract:

Chalcopyrite nonlinear optical (NLO) semiconductors are presently enjoying a major renaissance. This rebirth of interest is due primarily to the success of recent materials research-and-development (R&D) programs that have dramatically improved the availability of large crackfree high-quality crystals. This overview provides a general review of chalcopyrites, of their application in laser systems that exploit second-harmonic generation (SHG) or optical parametric oscillation (OPO), and of the materials-selection criteria for laser crystals to assist in focusing R&D efforts. It also sug

APA, Harvard, Vancouver, ISO, and other styles

28

Robertson, John. "Silicon versus the rest." Canadian Journal of Physics 92, no. 7/8 (2014): 553–60. http://dx.doi.org/10.1139/cjp-2013-0543.

Full text

Abstract:

We review the material properties that allowed amorphous silicon to become the dominant large area semiconductor and then point out how amorphous oxide semiconductors could displace a-Si in thin film transistors, and how phase change materials, such as GeSbTe alloys, have provided an optical storage technology and will provide a nonvolatile electrical storage technology based on their unique properties.

APA, Harvard, Vancouver, ISO, and other styles

29

YADAV, DHEERENDRA SINGH, and A. S. VERMA. "ELECTRONIC, OPTICAL AND MECHANICAL PROPERTIES OF AIIBVI SEMICONDUCTORS." International Journal of Modern Physics B 26, no. 08 (2012): 1250020. http://dx.doi.org/10.1142/s0217979212500208.

Full text

Abstract:

The modified dielectric theory of solids is applied to investigate electronic, optical and mechanical properties of A II B VI binary semiconductors ( ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgS, HgSe & HgTe ). The values of homopolar gaps (Eh), heteropolar gaps (Ec) and average energy gaps (Eg) were evaluated for these A II B VI groups of binary semiconductors with Zinc-blende (ZB) structure. The derived values of average energy gap (Eg) were found to be in excellent agreement with the values obtained from the Penn model except ZnO . The electronic polarizability was investigated using

APA, Harvard, Vancouver, ISO, and other styles

30

Abdubannopov, M. I., and Х. T. Yuldashev. "OPTICAL AND ELECTRICAL PROPERTIES OF SEMICONDUCTOR CRYSTALS." International Journal of Advance Scientific Research 03, no. 04 (2023): 83–89. http://dx.doi.org/10.37547/ijasr-03-04-12.

Full text

Abstract:

Electronic elements are mainly made on the basis of semiconductor materials. Therefore, knowing the optical and photoelectric properties of electronic elements requires studying the structure of semiconductor materials, their differences from metals and dielectric materials, and the properties that are directly fundamental to semiconductor materials.

APA, Harvard, Vancouver, ISO, and other styles

31

Doroftei, Corneliu, Liviu Leontie, Ramona Danac, Cristina-Maria Al Matarneh, and Aurelian Carlescu. "Exploring Pyrrolo-Phenanthrolines as Semiconductors for Potential Implementation in Organic Electronics." Materials 16, no. 9 (2023): 3366. http://dx.doi.org/10.3390/ma16093366.

Full text

Abstract:

This paper describes the synthesis and characterization of new organic semiconductors based on pyrrolo[1,2-i][1,7]phenanthrolines in the form of thin layers. The thin layers, produced via the spin coating method (with a thickness of 10–11 μm), were investigated for their electrical and optical properties. After heat treatment at temperatures ranging from 210 to 240 °C, the layers displayed consistent and reproducible properties. The layers exhibited n-type semiconductor behavior, with a thermal activation energy (Ea) in the range of 0.75–0.78 eV. Additionally, the layers showed transmittance v

APA, Harvard, Vancouver, ISO, and other styles

32

Rajeshwar, Krishnan, Norma R. de Tacconi, and Hari K. Timmaji. "New-Generation Oxide Semiconductors for Solar Energy Conversion and Environmental Remediation." Journal of Nano Research 17 (February 2012): 185–91. http://dx.doi.org/10.4028/www.scientific.net/jnanor.17.185.

Full text

Abstract:

Two Oxide Semiconductors, Namely, Bismuth Vanadate (BiVO4) and Silver Bismuth Tungstate (AgBiW2O8) Were Prepared by Solution Combustion Synthesis and their Attributes as Photocatalysts Were Comparatively Evaluated. A Key Conclusion of this Study Is that the Optical Characteristics Alone Provide only a Partial Glimpse into the Applicability of a Given Semiconductor for Solar Energy Conversion and Environmental Remediation. Thus while the Optical Bandgap of Bivo4 Is Lower than Agbiw2o8 (and Thus Is Able to Harness a Greater Portion of the Solar Spectrum), its Photocatalytic Activity for the Degr

APA, Harvard, Vancouver, ISO, and other styles

33

Hnatovsky, Cyril, Stephen Mihailov, Michael Hilke, Loren Pfeiffer, Ken West, and Sergei Studenikin. "An Optical Technique to Produce Embedded Quantum Structures in Semiconductors." Nanomaterials 13, no. 10 (2023): 1622. http://dx.doi.org/10.3390/nano13101622.

Full text

Abstract:

The performance of a semiconductor quantum-electronic device ultimately depends on the quality of the semiconductor materials it is made of and on how well the device is isolated from electrostatic fluctuations caused by unavoidable surface charges and other sources of electric noise. Current technology to fabricate quantum semiconductor devices relies on surface gates which impose strong limitations on the maximum distance from the surface where the confining electrostatic potentials can be engineered. Surface gates also introduce strain fields which cause imperfections in the semiconductor c

APA, Harvard, Vancouver, ISO, and other styles

34

Vorobey, R. I., O. K. Gusev, A. L. Zharin, et al. "Series of Photovoltaic Converters Based on Semiconductors with Intrinsic Photoconductivity." Devices and Methods of Measurements 12, no. 2 (2021): 108–16. http://dx.doi.org/10.21122/2220-9506-2021-12-2-108-116.

Full text

Abstract:

One of the ways to solve multiple problems of optical diagnostics is to use photovoltaic converters based on semiconductors with intrinsic photoconductivity slightly doped with deep impurities which form several energy levels with different charge states within the semiconductor′s bandgap. Peculiarities of physical processes of recharging these levels make it possible to construct photodetectors with different functionality based on a range of simple device structures.The aim of this work is to analyze peculiarities of conversion characteristics of single-element photovoltaic converters based

APA, Harvard, Vancouver, ISO, and other styles

35

Jiang, Ao, Shibo Xing, Haowei Lin, Qing Chen, and Mingxuan Li. "Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics." Photonics 11, no. 4 (2024): 370. http://dx.doi.org/10.3390/photonics11040370.

Full text

Abstract:

Numerous optoelectronic devices based on low-dimensional nanostructures have been developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero- and one-dimensional nanomaterials) have been favored in the field of optoelectronics. In this review, we discuss in detail the structures, preparation methods, band structures, electronic properties, and optoelectronic applications (photocatalysis, photoelectric detection, solar cells, light-emitting diodes, lasers, and optical quantum information processing) of pyramidal low-dimensional semiconductors and demonstrate their ex

APA, Harvard, Vancouver, ISO, and other styles

36

Yang, Cheng-Hsien, and Shu-Tong Chang. "First-Principles Study of the Optical Properties of TMDC/Graphene Heterostructures." Photonics 9, no. 6 (2022): 387. http://dx.doi.org/10.3390/photonics9060387.

Full text

Abstract:

The transition-metal dichalcogenide (TMDC) in the family of MX2 (M=Mo,W; X=S,Se) and the graphene (Gr) monolayer are an atomically thin semiconductor and a semimetal, respectively. The monolayer MX2 has been discovered as a new class of semiconductors for electronics and optoelectronics applications. Because of the hexagonal lattice structure of both materials, MX2 and Gr are often combined with each other to generate van der Waals heterostructures. Here, the MX2/Gr heterostructures are investigated theoretically based on density functional theory (DFT). The electronic structure and the optica

APA, Harvard, Vancouver, ISO, and other styles

37

Ando, K., H. Saito, V. Zayets, and M. C. Debnath. "Optical properties and functions of dilute magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5541—S5548. http://dx.doi.org/10.1088/0953-8984/16/48/009.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Falkovsky, L. A. "Optical properties of graphene and IV–VI semiconductors." Physics-Uspekhi 51, no. 9 (2008): 887–97. http://dx.doi.org/10.1070/pu2008v051n09abeh006625.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Burch, K. S., D. D. Awschalom, and D. N. Basov. "Optical properties of III-Mn-V ferromagnetic semiconductors." Journal of Magnetism and Magnetic Materials 320, no. 23 (2008): 3207–28. http://dx.doi.org/10.1016/j.jmmm.2008.08.060.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

D’Andrea, A., and R. Del Sole. "Optical properties of excitons in semi-infinite semiconductors." Physical Review B 38, no. 2 (1988): 1197–209. http://dx.doi.org/10.1103/physrevb.38.1197.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Zhang, Y. B., S. Li, T. T. Tan, and H. S. Park. "Optical properties of bulk Zn1−xCoxO magnetic semiconductors." Solid State Communications 137, no. 3 (2006): 142–45. http://dx.doi.org/10.1016/j.ssc.2005.11.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Even, Raymond, Jacques Simon, and Dimitra Markovitsi. "Optical properties of thin films of molecular semiconductors." Chemical Physics Letters 156, no. 6 (1989): 609–14. http://dx.doi.org/10.1016/s0009-2614(89)87241-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Kalarasse, L., B. Bennecer, and F. Kalarasse. "Optical properties of the alkali antimonide semiconductors , , and." Journal of Physics and Chemistry of Solids 71, no. 3 (2010): 314–22. http://dx.doi.org/10.1016/j.jpcs.2009.12.083.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Kagami, K., M. Takahashi, and K. Kubo. "Transport and Optical Properties of Diluted Magnetic Semiconductors." Journal of Superconductivity 18, no. 1 (2005): 121–26. http://dx.doi.org/10.1007/s10948-005-2162-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Onari, S., T. Inokuma, T. Hiroaki, H. Kataura, and T. Arai. "Optical properties of amorphous semiconductors under high pressure." Semiconductor Science and Technology 4, no. 4 (1989): 254–56. http://dx.doi.org/10.1088/0268-1242/4/4/019.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Nikolić, P. M., S. S. Vujatović, Lj Milos̃ević, J. D. Collins, and G. A. Gledhill. "Optical properties of amorphous Ge-Sb-Se semiconductors." Solid State Communications 72, no. 6 (1989): 621–24. http://dx.doi.org/10.1016/0038-1098(89)91045-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Tiwari, Shikha, and Sanjay Tiwari. "Electrical and optical properties of CdS nanocrystalline semiconductors." Crystal Research and Technology 41, no. 1 (2006): 78–82. http://dx.doi.org/10.1002/crat.200410534.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Yartsev, V. M. "Optical Properties of Quasi-1Dn-Merized Molecular Semiconductors." physica status solidi (b) 149, no. 1 (1988): 157–67. http://dx.doi.org/10.1002/pssb.2221490117.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

YADAIAH, K., J. KRISHNAIAH, VASUDEVA REDDY, and M. NAGABHUSHANAM. "Dielectric Properties of (CdSe)1-X(ZnS)X Mixed Semiconductor Compounds." Material Science Research India 9, no. 2 (2012): 179–89. http://dx.doi.org/10.13005/msri/090202.

Full text

Abstract:

Dielectric permittivity has been an important property of binary and mixed semiconductor materials as it is closely related to the studies on polarization and relaxation mechanisms. Therefore, dielectric properties of (CdSe)1-X(ZnS)X mixed semiconductors are studied at different frequencies. The mixed semiconductor samples used in the study are grown by controlled co-precipitation method. From these studies ac conductivity, static and optical dielectric constants, relaxation times and activation energy of dipole relaxation are determined. The variation of dielectric constant with frequency and

APA, Harvard, Vancouver, ISO, and other styles

50

Stefan, Mihaela, Chandima Bulumulla, Ruwan Gunawardhana, Prabhath Gamage, Ruvanthi Kularatne та Michael Biewer. "π-Spacer-Linked Bisthienopyrroles with Tunable Optical Properties". Synlett 29, № 19 (2018): 2567–71. http://dx.doi.org/10.1055/s-0037-1611055.

Full text

Abstract:

Thieno[3,2-b]pyrrole is an effective nonconventional semiconducting building block that could be generated in gram quantities with relatively high overall yields. Three organic semiconductors containing thieno[3,2-b]pyrrole were synthesized in good yields without requiring time-consuming column purifications. The synthesis, optical and electrochemical properties were systematically investigated.1 Introduction2 Experimental3 Synthesis and Characterization4 Theoretical Calculations5 Optical and Electrochemical Properties6 Thermal Stability7 Fluorescence Experiments8 GIXRD Data9 Conclusions

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!