Relevant bibliographies by topics / Optoelectronic Devices Semiconductor

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Optoelectronic Devices Semiconductor'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "Optoelectronic Devices Semiconductor"

1

Bhattacharya, Pallab, and Lily Y. Pang. "Semiconductor Optoelectronic Devices." Physics Today 47, no. 12 (1994): 64. http://dx.doi.org/10.1063/1.2808754.

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Chapman, David. "Optoelectronic semiconductor devices." Microelectronics Journal 25, no. 8 (1994): 769. http://dx.doi.org/10.1016/0026-2692(94)90143-0.

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Bouscher, Shlomi, Dmitry Panna, and Alex Hayat. "Semiconductor–superconductor optoelectronic devices." Journal of Optics 19, no. 10 (2017): 103003. http://dx.doi.org/10.1088/2040-8986/aa8888.

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Sang, Xianhe, Yongfu Wang, Qinglin Wang, et al. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectroni
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Friend, R. H. "Conjugated polymers. New materials for optoelectronic devices." Pure and Applied Chemistry 73, no. 3 (2001): 425–30. http://dx.doi.org/10.1351/pac200173030425.

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Conjugated polymers now provide a class of processible, film-forming semiconductors and metals. We have worked on the development of the semiconductor physics of these materials by using them as the active components in a range of semiconductor devices. Polymer light-emitting diodes show particular promise, and recent developments in color range (red, green, and blue), efficiency (above 20 lumen/W for green emitters), and operating lifetime are discussed. Progress on their application to displays, with integration with active-matrix TFT drive, and with patterned deposition using inkjet printin
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Kim, Sunjae, Minje Kim, Jihyun Kim та Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, № 7 (2023): 1199. http://dx.doi.org/10.3390/nano13071199.

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The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN tre
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Gorham, D. "Amorphous and microcrystalline semiconductor devices: Optoelectronic devices." Microelectronics Journal 24, no. 7 (1993): 733. http://dx.doi.org/10.1016/0026-2692(93)90016-8.

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DUTTA, M., M. A. STROSCIO, and K. W. KIM. "RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (1998): 281–312. http://dx.doi.org/10.1142/s0129156498000130.

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As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quant
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Murakami, Masanori, Yasuo Koide, Miki Moriyama, and Susumu Tsukimoto. "Development of Electrode Materials for Semiconductor Devices." Materials Science Forum 475-479 (January 2005): 1705–14. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1705.

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Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current
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Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attent
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Dissertations / Theses on the topic "Optoelectronic Devices Semiconductor"

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Hu, Jun. "Semiconductor nanowire based optoelectronic devices: physics, simulation and design /." Diss., Digital Dissertations Database. Restricted to UC campuses, 2009. http://uclibs.org/PID/11984.

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Khadka, Sudiksha. "Growth Techniques and Optoelectronic Study of 2D Semiconductor Based Devices." Ohio University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1515607278534591.

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Yoo, Jung-Woo. "Multiple photonic response in organic-based magnetic semiconductor." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1167406887.

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Malfavon-Ochoa, Mario, and Mario Malfavon-Ochoa. "Characterization of Semiconductor Nanocrystal Assemblies as Components of Optoelectronic Devices." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/625902.

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This dissertation presents new insight into the ability of small molecule passivated NCs to achieve intimate approach distances, despite being well passivated, while developing guiding principles in the area of ligand mediated microstructure control and the resulting macroscopic optical and electronic properties that close packing of high quality NCs enables. NC ligand coverage will be characterized quantitatively through thermogravimetric analysis (TGA), and qualitatively by photoluminescence and electroluminescence, in the case of functional devices; illustrating the importance of practitio
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Zhang, Minya. "Optoelectronic device modeling using field simulation techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0005/NQ42892.pdf.

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Jones, Gareth Francis. "Modification of graphene for applications in optoelectronic devices." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/31537.

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In this thesis, we investigate how the optical and electronic properties of graphene may be modified in proximity to various other materials. We present several examples of how modification in this way can help make graphene better suited for specific device applications. We develop a method of up-scaling the fabrication of FeCl3-intercalated few-layer graphene from micron-sized flakes to macroscopic films so that it may be used as a transparent electrode in flexible light-emitting devices. We also find that photo-responsive junctions can be arbitrarily written into FeCl3-intercalated few-laye
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Bashar, Shabbir Ahsanul. "Study of transparent indium tin oxide for novel optoelectronic devices." Thesis, King's College London (University of London), 1998. https://kclpure.kcl.ac.uk/portal/en/theses/study-of-transparent-indium-tin-oxide-for-novel-optoelectronic-devices(280e6da3-8da2-4680-9059-242b229ae1b7).html.

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Indium Tin Oxide (ITO) films were deposited on a number of semi-conductor materials using reactive r. f sputtering technique to form both rectifying Schottky and ohmic contacts. These contacts were applied in the fabrication of a number of novel optoelectronic devices: Schottky photo-diodes, transparent gate High Electron Mobility Transistors (HEMTs), heterojunction bipolar transistors (HBTs) being used as heterojunction phototransistors (HPTs), light emitting diodes (LEDs) and vertical cavity surface emitting lasers (VCSELs). A number ofthese novel devices were studied in comparatively greate
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Sarker, Biddut. "Electronic and Optoelectronic Transport Properties of Carbon Nanotube/Organic Semiconductor Devices." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5482.

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Organic field effect transistors (OFETs) are of significant research interest due to their promising applications in large area, low-cost electronic devices such as flexible displays, sensor arrays, and radio-frequency identification tags. A major bottleneck in fabricating high-performance OFET is the large interfacial barrier between the metal electrodes and organic semiconductors (OSC) which results in an inefficient charge injection. Carbon nanotubes (CNTs) are considered to be a promising electrode material which can address this challenge. In this dissertation, we demonstrate fabrication
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Lafone, Lucas. "Metal loading of semiconductor on insulator architectures for nanoscale optoelectronic devices." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/30766.

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The strong confinement provided by plasmonic resonances has extended optics down to the nanoscale, allowing an unprecedented control over the interaction between light and matter. This could have far reaching applications in the development of ultra-compact and novel op- toelectronic devices. However, for commercial implementation of these plasmonic devices to become a reality there needs to be a shift toward designs which are compatible with the materi- als and processes of the established semiconductor industry. This is the overarching aim of the work presented in this thesis; here plasmonic
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Seidenberg, Philip Nelson. "Optoelectronic device technology policy in the US and Japan." Thesis, Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/29373.

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Books on the topic "Optoelectronic Devices Semiconductor"

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Optoelectronic semiconductor devices. Prentice Hall, 1994.

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Bhattacharya, Pallab. Semiconductor optoelectronic devices. 2nd ed. Prentice Hall, 1997.

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Bhattacharya, P. K. Semiconductor optoelectronic devices. Prentice Hall, 1993.

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Bhattacharya, Pallab. Semiconductor optoelectronic devices. Prentice Hall, 1994.

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Bhattacharya, Pallab Kumar. Semiconductor optoelectronic devices. Prentice-Hall International, 1994.

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Fukuda, Mitsuo. Optical semiconductor devices. Wiley, 1999.

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Yi, Gyu-Chul, ed. Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22480-5.

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Singh, Jasprit. Semiconductor optoelectronics: Physics and technology. McGraw-Hill, 1995.

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Semiconductor optoelectronics: Physics and technology. McGraw-Hill, 1995.

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Ghione, Giovanni. Semiconductor devices for high-speed optoelectronics. Cambridge University Press, 2009.

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Book chapters on the topic "Optoelectronic Devices Semiconductor"

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Lozes-Dupuy, F., H. Martinot, and S. Bonnefont. "Optoelectronic semiconductor devices." In Perspectives for Parallel Optical Interconnects. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-49264-8_7.

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Evstigneev, Mykhaylo. "Optoelectronic Devices." In Introduction to Semiconductor Physics and Devices. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_12.

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Vasko, Fedor T., and Alex V. Kuznetsov. "Heterostructure-Based Optoelectronic Devices." In Electronic States and Optical Transitions in Semiconductor Heterostructures. Springer New York, 1999. http://dx.doi.org/10.1007/978-1-4612-0535-7_12.

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Picraux, S. T., J. Yoo, I. H. Campbell, S. A. Dayeh, and D. E. Perea. "Semiconductor Nanowires for Solar Cells." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_11.

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Yoo, Jinkyoung. "Luminescence Characterizations of Semiconductor Nanostructures." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_8.

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Jiang, Fengyi. "Advanced Optoelectronic Device Processing." In Handbook of GaN Semiconductor Materials and Devices. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-8.

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Park, Won Il, Jung Min Lee, Dong Hyun Lee, and Gyu-Chul Yi. "Hybrid Semiconductor Nanostructures with Graphene Layers." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_6.

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Choi, Heon-Jin. "Vapor–Liquid–Solid Growth of Semiconductor Nanowires." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_1.

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Yatsui, Takashi, Gyu-Chul Yi, and Motoichi Ohtsu. "Nanophotonic Device Application Using Semiconductor Nanorod Heterostructures." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_10.

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Lee, Chul-Ho, and Gyu-Chul Yi. "Catalyst-Free Metal-Organic Vapor-Phase Epitaxy of ZnO and GaN Nanostructures for Visible Light-Emitting Devices." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_2.

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Conference papers on the topic "Optoelectronic Devices Semiconductor"

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Laybourn, Peter J. R., Marc Sorel, Guido Giuliani, and Silvano Donati. "Integrated semiconductor laser rotation sensor." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Giancarlo C. Righini and S. Iraj Najafi. SPIE, 1999. http://dx.doi.org/10.1117/12.343745.

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Netesova, Nadezhda P. "Oscillator parameters of semiconductor heterostructures." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356932.

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Koh, Ping-Chiek, and Richard G. S. Plumb. "Widely tunable hybrid semiconductor lasers." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Michael R. Feldman, James G. Grote, and Mary K. Hibbs-Brenner. SPIE, 1999. http://dx.doi.org/10.1117/12.348300.

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Panna, D., S. Bouscher, S. Cohen, L. Rybak, D. Ritter, and A. Hayat. "Semiconductor-superconductor optoelectronic devices." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087312.

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Mena, Pablo V., James J. Morikuni, Austin V. Harton, and Karl W. Wyatt. "Circuit-level model of semiconductor photodetectors." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356916.

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Sen, Pratima, and Joseph Thomas Andrews. "Absorption characteristics of semiconductor quantum dots." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Kong-Thon F. Tsen. SPIE, 1999. http://dx.doi.org/10.1117/12.349281.

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Fan, Honglei, Chiming Wu, Niloy K. Dutta, Uziel Koren, C. H. Chen, and Alfonso B. Piccirilli. "Cross gain modulation in semiconductor optical amplifier." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356881.

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Hooijer, Christa L. A., Gao-Xiang Li, Klaas Allaart, and Daan Lenstra. "Properties of spontaneous emission in semiconductor structures." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356923.

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Huhse, Dieter, Christian Warmuth, Markus Schulze, and Dieter Bimberg. "Generation of short wavelength-tunable semiconductor laser pulses." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356879.

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Dougherty, David J., Roman C. Gutierrez, Serge Dubovitsky, and Siamak Forouhar. "Semiconductor laser linewidth measurements for space interferometry applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Mahmoud Fallahi, Kurt J. Linden, and S. C. Wang. SPIE, 1999. http://dx.doi.org/10.1117/12.345421.

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Reports on the topic "Optoelectronic Devices Semiconductor"

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Ding, Yujie J. Optoelectronic Devices Based on Novel Semiconductor Structures. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada451063.

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Chaung, S. L. Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices. Defense Technical Information Center, 1996. http://dx.doi.org/10.21236/ada319314.

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Holonyak, N., and Jr. Native-Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectronic Devices: Al-Based III-V Native Oxides. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada384363.

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Kurtz, Steven Ross, Terry W. Hargett, Darwin Keith Serkland, et al. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/918384.

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