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Dissertations / Theses on the topic 'Optoelectronic Devices Semiconductor'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Hu, Jun. "Semiconductor nanowire based optoelectronic devices: physics, simulation and design /." Diss., Digital Dissertations Database. Restricted to UC campuses, 2009. http://uclibs.org/PID/11984.

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2

Khadka, Sudiksha. "Growth Techniques and Optoelectronic Study of 2D Semiconductor Based Devices." Ohio University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1515607278534591.

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3

Yoo, Jung-Woo. "Multiple photonic response in organic-based magnetic semiconductor." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1167406887.

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4

Malfavon-Ochoa, Mario, and Mario Malfavon-Ochoa. "Characterization of Semiconductor Nanocrystal Assemblies as Components of Optoelectronic Devices." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/625902.

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This dissertation presents new insight into the ability of small molecule passivated NCs to achieve intimate approach distances, despite being well passivated, while developing guiding principles in the area of ligand mediated microstructure control and the resulting macroscopic optical and electronic properties that close packing of high quality NCs enables. NC ligand coverage will be characterized quantitatively through thermogravimetric analysis (TGA), and qualitatively by photoluminescence and electroluminescence, in the case of functional devices; illustrating the importance of practitio

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5

Zhang, Minya. "Optoelectronic device modeling using field simulation techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0005/NQ42892.pdf.

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6

Jones, Gareth Francis. "Modification of graphene for applications in optoelectronic devices." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/31537.

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In this thesis, we investigate how the optical and electronic properties of graphene may be modified in proximity to various other materials. We present several examples of how modification in this way can help make graphene better suited for specific device applications. We develop a method of up-scaling the fabrication of FeCl3-intercalated few-layer graphene from micron-sized flakes to macroscopic films so that it may be used as a transparent electrode in flexible light-emitting devices. We also find that photo-responsive junctions can be arbitrarily written into FeCl3-intercalated few-laye

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7

Bashar, Shabbir Ahsanul. "Study of transparent indium tin oxide for novel optoelectronic devices." Thesis, King's College London (University of London), 1998. https://kclpure.kcl.ac.uk/portal/en/theses/study-of-transparent-indium-tin-oxide-for-novel-optoelectronic-devices(280e6da3-8da2-4680-9059-242b229ae1b7).html.

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Indium Tin Oxide (ITO) films were deposited on a number of semi-conductor materials using reactive r. f sputtering technique to form both rectifying Schottky and ohmic contacts. These contacts were applied in the fabrication of a number of novel optoelectronic devices: Schottky photo-diodes, transparent gate High Electron Mobility Transistors (HEMTs), heterojunction bipolar transistors (HBTs) being used as heterojunction phototransistors (HPTs), light emitting diodes (LEDs) and vertical cavity surface emitting lasers (VCSELs). A number ofthese novel devices were studied in comparatively greate

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8

Sarker, Biddut. "Electronic and Optoelectronic Transport Properties of Carbon Nanotube/Organic Semiconductor Devices." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5482.

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Organic field effect transistors (OFETs) are of significant research interest due to their promising applications in large area, low-cost electronic devices such as flexible displays, sensor arrays, and radio-frequency identification tags. A major bottleneck in fabricating high-performance OFET is the large interfacial barrier between the metal electrodes and organic semiconductors (OSC) which results in an inefficient charge injection. Carbon nanotubes (CNTs) are considered to be a promising electrode material which can address this challenge. In this dissertation, we demonstrate fabrication

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9

Lafone, Lucas. "Metal loading of semiconductor on insulator architectures for nanoscale optoelectronic devices." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/30766.

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The strong confinement provided by plasmonic resonances has extended optics down to the nanoscale, allowing an unprecedented control over the interaction between light and matter. This could have far reaching applications in the development of ultra-compact and novel op- toelectronic devices. However, for commercial implementation of these plasmonic devices to become a reality there needs to be a shift toward designs which are compatible with the materi- als and processes of the established semiconductor industry. This is the overarching aim of the work presented in this thesis; here plasmonic

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10

Seidenberg, Philip Nelson. "Optoelectronic device technology policy in the US and Japan." Thesis, Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/29373.

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11

He, Jianqing. "Finite difference time domain simulation of subpicosecond semiconductor optical devices." Diss., This resource online, 1993. http://scholar.lib.vt.edu/theses/available/etd-05042006-164534/.

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12

Schroeder, Raoul. "Characterization of Organic and Inorganic Optoelectronic Semiconductor Devices Using Advanced Spectroscopic Methods." Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/25957.

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In this thesis, advanced spectroscopy methods are discussed and applied to gain understanding of the physical properties of organic conjugated molecules, II-VI thin film semiconductors, and vertical cavity surface emitting lasers (VCSEL). Experiments include single photon and two-photon excitation with lasers, with subsequent measurements of the absorption and photoluminescence, as well as photocurrent measurements using tungsten and xenon lamps, measuring the direct current and the alternating current of the devices. The materials are investigated in dissolved form (conjugated polymers), thin

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13

Philbrick, Robert H. "Modeling of light absorption in solid state imagers /." Online version of thesis, 1990. http://hdl.handle.net/1850/10557.

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14

Greenberg, Kathryn J. "Thermal coupling and lensing in arrays of vertical cavity surface emitting lasers /." Connect to online version, 2009. http://ada.mtholyoke.edu/setr/websrc/pdfs/www/2009/370.pdf.

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15

Wang, Dongxue Michael. "Optoelectronic device simulation optical modeling for semiconductor optical amplifiers and solid state lighting /." Diss., Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-03292006-132611/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2006.<br>Buck, John, Committee Co-Chair ; Ferguson, Ian, Committee Chair ; Krishnamurthy,Vikram, Committee Member ; Chang, Gee-Kung, Committee Member ; Callen, W. Russell Jr., Committee Member ; Summers, Christopher, Committee Member.

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16

Imam, Neena. "Analysis, design, and testing of semiconductor intersubband devices." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/15664.

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17

Kinder, Erich W. "Fabrication of All-Inorganic Optoelectronic Devices Using Matrix Encapsulation of Nanocrystal Arrays." Bowling Green State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1339719904.

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18

Gallacher, Tom F. "Optoelectronic modulation of mm-wave beams using a photo-injected semiconductor substrate." Thesis, University of St Andrews, 2012. http://hdl.handle.net/10023/3103.

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This thesis discusses optoelectronic devices at mm-wave frequencies, focusing on optoelectronic beamforming and non-mechanical beam steering based on an optically excited Fresnel zone plate plasma. The optically controlled zone plate, termed the photo-injected Fresnel zone plate antenna (piFZPA) within this work, is introduced and a comprehensive theoretical framework developed. The design and optimisation of Fresnel zone plates are detailed, which determine the inherent performance of the piFZPA. A range of zone plates were designed, fabricated, and characterised at 94 GHz with up to 46 dBi g

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19

Jeelani, Mohammad Kamran. "Integration and characterization of micromachined optical microphones." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31759.

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Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Degertekin, F. Levent; Committee Member: Baldwin, Daniel; Committee Member: Hesketh, Peter. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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20

Willis, Shawn M. "Advanced optoelectronic characterisation of solar cells." Thesis, University of Oxford, 2011. http://ora.ox.ac.uk/objects/uuid:07683f00-b7ba-4be3-aec0-f389fed34644.

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Optoelectronic characterisation techniques are assessed in their application to three solar cell systems. Charge injection barriers are found in PbS/ZnO colloidal quantum dot solar cells through the use of temperature dependent current-voltage and capacitance-voltage measurements. The injection barriers are shown to complicate the Mott-Schottky capacitance analysis which determines built-in bias and doping density. A model that incorporates depletion capacitance and a constant capacitance arising from the injection barriers is given to explain the Mott-Schottky plots. The junction mechanism at

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21

Huang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.

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Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and

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22

Katsube, Ryoji. "Investigation on properties of zinc phosphide related materials and interfaces for optoelectronic devices." Kyoto University, 2018. http://hdl.handle.net/2433/232037.

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23

Bell, Matthew Richard. "Versatile high resolution dispersion measurements in semiconductor photonic nanostructures using ultrashort pulses." Thesis, St Andrews, 2007. http://hdl.handle.net/10023/339.

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24

Park, Jongwoon Huang W. P. "Modeling, simulation and performance optimization of wideband semiconductor optical amplifiers." *McMaster only, 2004.

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25

Meneghini, Matteo. "Analysis of the physical processes that limit the reliability of GaN-based optoelectronic devices." Doctoral thesis, Università degli studi di Padova, 2008. http://hdl.handle.net/11577/3425083.

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This thesis reports the results of an extensive analysis of the reliability of GaN-based Light-Emitting Diodes (LEDs) and Laser Diodes (LDs). The analysis has been carried out in close cooperation with the manufacturers of the devices: for this reason, we have worked on state-of-the-art LEDs, lasers and R&D samples, providing a feedback to the manufacturer on the weaknesses of adopted technology. By means of specific experiments on suitable test structures, we have been able to separately analyze (i) the degradation of the LEDs active region, (ii) the role of passivation layer in limiting LEDs

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26

Henwood, Adam Francis. "Tuning the physical and optoelectronic properties of phosphorescent iridium(III) complexes : applications to organic semiconductor devices." Thesis, University of St Andrews, 2017. http://hdl.handle.net/10023/12976.

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This thesis explores the design, synthesis and characterisation of iridium(III) complexes for optoelectronic applications; in particular, cationic [Ir(CˆN)₂(NˆN)]⁺-type emitters (where CˆN is an anionic bidentate cyclometalating ligand such as 2-phenylpyridinato, ppy, and NˆN is a neutral bidentate ligand such as 2,2'-bipyridine, bpy) for use in light-emitting electrochemical cells (LEECs). Design strategies aim to achieve high photoluminescence quantum yields (Φ[sub](PL)) for these complexes. Chapter 1 provides an overview of the fundamental photophysics of luminescent transition metal comple

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27

Holmes, Adrian Lawrence. "Compound semiconductor native oxide-based technologies for optical and electrical devices grown on GaAs substrates using MOCVD /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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28

Zollondz, Jens-Hendrik. "Electronic characterisation and computer modelling of thin film materials and devices for optoelectronic applications." Thesis, University of Abertay Dundee, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369510.

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29

Terranova, Brandon. "Design and optimization of VCSEL-based optical interconnects on package." Diss., Online access via UMI:, 2009.

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30

Figueiredo, Rafael Carvalho 1982. "Ultrafast electro-optical switching of semiconductor optical amplifiers = modeling and experiments." [s.n.], 2015. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260748.

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Orientador: Evandro Conforti<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-26T17:49:28Z (GMT). No. of bitstreams: 1 Figueiredo_RafaelCarvalho_D.pdf: 7764328 bytes, checksum: 3a3b008ba1f610e5a7c3ef694ff3f04d (MD5) Previous issue date: 2015<br>Resumo: O desempenho de chaves eletro-ópticas baseadas em amplificadores ópticos a semicondutor (SOA), incluindo experimentos e simulações usando diferentes formatos de pulso na injeção de corrente elétrica, é apresentado. Quatro SOAs com características fí

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31

Tan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.

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32

Moldawer, Adam Lyle. "Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy." Thesis, Boston University, 2013. https://hdl.handle.net/2144/11151.

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Thesis (Ph.D.)--Boston University<br>The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This PhD research addresses both the development of polar and nonpolar GaN and AIN templates by Hydride Vapor Phase Epitaxy (HVPE) on sapphire and SiC substrates, as well a

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33

Guimarães, Murilo. "Circuito equivalente e extração de parametros em um amplificador optico a semicondutor." [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259024.

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Orientadores: Evandro Conforti, Cristiano de Melo Galle<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e Computação<br>Made available in DSpace on 2018-08-09T14:44:31Z (GMT). No. of bitstreams: 1 Guimaraes_Murilo_M.pdf: 2868472 bytes, checksum: 35d629f44273794bf3425431f0abbade (MD5) Previous issue date: 2007<br>Resumo: O advento das comunicações por fibras ópticas esteve intrinsecamente ligado aos lasers a diodo semicondutor. Posteriormente, principalmente na área de redes metropolitanas, iniciaram-se as aplicações envolvendo o amplificador óp

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34

Ribeiro, Napoleão dos Santos. "Chaveamento eletro-optico ultrarrapido e conversão regenerativa utilizando amplificadores opticos a semicondutor." [s.n.], 2009. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260397.

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Orientadores: Evandro Conforti, Cristiano de Mello Gallep<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação<br>Made available in DSpace on 2018-08-14T19:57:35Z (GMT). No. of bitstreams: 1 Ribeiro_NapoleaodosSantos_D.pdf: 16714104 bytes, checksum: b2100f0e9b322ce60f4114a173936ab3 (MD5) Previous issue date: 2009<br>Resumo: As chaves eletro-ópticas ultrarrápidas, os regeneradores e os conversores em comprimento de onda são dispositivos promissores para serem incorporados nas futuras redes ópticas. Neste trabalho, apresentam-se simulações e

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35

Neophytou, Ares Ioanni. "Hybrid active optical switching using semiconductor laser devices." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260354.

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36

Li, Guangru. "Nanostructured materials for optoelectronic devices." Thesis, University of Cambridge, 2016. https://www.repository.cam.ac.uk/handle/1810/263671.

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This thesis is about new ways to experimentally realise materials with desired nano-structures for solution-processable optoelectronic devices such as solar cells and light-emitting diodes (LEDs), and examine structure-performance relationships in these devices. Short exciton diffusion length limits the efficiency of most exciton-based solar cells. By introducing nano-structured architectures to solar cells, excitons can be separated more effectively, leading to an enhancement of the cell’s power conversion efficiency. We use diblock copolymer lithography combined with solvent-vapour-assisted

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37

Landes, Christy. "The dependence of the opto-electronic properties of CdSe nanoparticles on surface properties." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/30657.

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38

Cariello, Michele. "Synthesis of novel organic semiconductors for optoelectronic devices." Thesis, University of Glasgow, 2016. http://theses.gla.ac.uk/7805/.

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This thesis describes the synthesis and characterisation of novel conjugated organic materials with optoelectronic application. The first chapter provides an introduction about organic semiconductors and in particular about their working principle from a physical and chemical point of view. An overview of the most common types of solar cells is provided, including examples of some of the best performing materials. The second chapter describes the synthesis of a new library of flavin derivatives as potential active materials for optoelectronic applications. Flavins are natural redox-active mole

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39

Simpson, W. J. "Investigation of high power effects in semiconductor integrated optical waveguide devices." Thesis, Cranfield University, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296277.

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40

Wilkinson, Lucinda Clare. "Indium gallium arsenide multiple quantum well devices for optically interconnected smart pixels." Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/640.

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41

Freeman, Will. "Imaging transport : optical measurements of diffusion and drift in semiconductor materials and devices /." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Sep%5FFreeman.pdf.

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42

Do, Thu Trang. "Electron deficient solution processable organic semiconductors for optoelectronic devices." Thesis, Queensland University of Technology, 2019. https://eprints.qut.edu.au/127140/2/Thu_Trang_Do_Thesis.pdf.

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This research is a study of novel developed electron deficient semiconducting materials for optoelectronic devices. It investigates the molecular engineering aspects of new conjugated small molecular electron acceptors with desirable properties such as strong and broad absorption, high electron mobility, and suitable energy levels and good solubility for organic solar cell and organic thin film transistor applications. Furthermore the effect of alkyl chain length on solubility, thermal, optical, electrochemical properties, and device efficiencies is also studied.

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43

Carrano, John Con. "High-performance ultraviolet photodetectors fabricated on single-crystal GaN /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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44

Lee, Siew-wan Alex. "Optical properties of intermixed quantum wells and its application in photodetectors /." Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B21326411.

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45

Bandyopadhyay, Sujit. "Optical effects on the spectral, dynamical and noise properties of semiconductor laser devices." Thesis, Bangor University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275146.

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46

Samantilleke, Anura Priyajith. "Electrodeposition of ZnSe, CdSe and CdTe thin film materials and optoelectronic devices." Thesis, Sheffield Hallam University, 1998. http://shura.shu.ac.uk/20319/.

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47

Montero, Martín Jose María. "Charge transport in organic semiconductors with application to optoelectronic devices." Doctoral thesis, Universitat Jaume I, 2010. http://hdl.handle.net/10803/10474.

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El estudio del transporte de carga en semiconductores orgánicos contribuye al desarrollo y optimización de LEDs orgánicos y nuevas células solares. En OLEDs de un sólo portador se ha encontrado una fórmula explícita de la característica densidad de corriente y potencial (J-V) con movilidad dependiente del campo eléctrico. Un test para diferenciar <br/>la movilidad dependiente del campo y de la densidad ha sido dado por medio de una ley universal de escalado. Los espectros de capacidad y los tiempos de tránsito han sido examinados con la inclusión de la movilidad dependiente del campo eléctrico

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48

Olusola, Olajide Ibukun-Olu. "Optoelectronic devices based on graded bandgap structures utilising electroplated semiconductors." Thesis, Sheffield Hallam University, 2016. http://shura.shu.ac.uk/20142/.

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The main aim of the work presented in this thesis is to develop low-cost multi-junction graded bandgap solar cells using electroplated semiconductors. The semiconductor materials explored in this research are CdSe, ZnTe, CdS, CdMnTe and CdTe thin films. These layers were characterised for their structural, compositional, morphological, optical, and electrical features using XRD, Raman spectroscopy, EDX, SEM, UV-Vis spectroscopy, PEC cell, C-V, I-V and UPS measurement techniques respectively. The summary of the results depict that CdSe and CdS semiconductors have hexagonal crystal structures an

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49

Lo, Chi Chuen. "Integrated silicon optical bench with passive alignment features for three-dimensional optical interconnect /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?MECH%202004%20LO.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.<br>Includes bibliographical references (leaves 118-122). Also available in electronic version. Access restricted to campus users.

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50

Xia, Ruidong. "Spatial resolved luminescence spectroscopy investigation of defect emission and degradation of III-V semiconductor devices." Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.272880.

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