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Journal articles on the topic 'Optoelectronic Devices Semiconductor'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Bhattacharya, Pallab, and Lily Y. Pang. "Semiconductor Optoelectronic Devices." Physics Today 47, no. 12 (1994): 64. http://dx.doi.org/10.1063/1.2808754.

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2

Chapman, David. "Optoelectronic semiconductor devices." Microelectronics Journal 25, no. 8 (1994): 769. http://dx.doi.org/10.1016/0026-2692(94)90143-0.

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3

Bouscher, Shlomi, Dmitry Panna, and Alex Hayat. "Semiconductor–superconductor optoelectronic devices." Journal of Optics 19, no. 10 (2017): 103003. http://dx.doi.org/10.1088/2040-8986/aa8888.

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4

Sang, Xianhe, Yongfu Wang, Qinglin Wang, et al. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectroni

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5

Friend, R. H. "Conjugated polymers. New materials for optoelectronic devices." Pure and Applied Chemistry 73, no. 3 (2001): 425–30. http://dx.doi.org/10.1351/pac200173030425.

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Conjugated polymers now provide a class of processible, film-forming semiconductors and metals. We have worked on the development of the semiconductor physics of these materials by using them as the active components in a range of semiconductor devices. Polymer light-emitting diodes show particular promise, and recent developments in color range (red, green, and blue), efficiency (above 20 lumen/W for green emitters), and operating lifetime are discussed. Progress on their application to displays, with integration with active-matrix TFT drive, and with patterned deposition using inkjet printin

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6

Kim, Sunjae, Minje Kim, Jihyun Kim та Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, № 7 (2023): 1199. http://dx.doi.org/10.3390/nano13071199.

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The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN tre

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7

Gorham, D. "Amorphous and microcrystalline semiconductor devices: Optoelectronic devices." Microelectronics Journal 24, no. 7 (1993): 733. http://dx.doi.org/10.1016/0026-2692(93)90016-8.

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8

DUTTA, M., M. A. STROSCIO, and K. W. KIM. "RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (1998): 281–312. http://dx.doi.org/10.1142/s0129156498000130.

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As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quant

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9

Murakami, Masanori, Yasuo Koide, Miki Moriyama, and Susumu Tsukimoto. "Development of Electrode Materials for Semiconductor Devices." Materials Science Forum 475-479 (January 2005): 1705–14. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1705.

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Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current

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10

Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attent

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11

Fan, Zhihua, Qinling Deng, Xiaoyu Ma, and Shaolin Zhou. "Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration." Materials 14, no. 5 (2021): 1272. http://dx.doi.org/10.3390/ma14051272.

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In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductor

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12

Lugli, Paolo, Fabio Compagnone, Aldo Di Carlo, and Andrea Reale. "Simulation of Optoelectronic Devices." VLSI Design 13, no. 1-4 (2001): 23–36. http://dx.doi.org/10.1155/2001/19585.

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In the spirit of reviewing various approaches to the modeling and simulation of optoelectronic devices, we discuss two specific examples, related respectively to Semiconductor Optical Amplifiers and to Quantum Cascade Lasers. In the former case, a tight-binding analysis is performed aimed at the optimization of the polarization independence of the device. Further, a rate-equation model is set up to describe the dynamics of gain recovery after optical pumping. A Monte Carlo simulation of a superlattice quantum cascade laser is then presented which provides an insight into the microscopic proces

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13

MILLER, D. A. B. "QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES." International Journal of High Speed Electronics and Systems 01, no. 01 (1990): 19–46. http://dx.doi.org/10.1142/s0129156490000034.

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Quantum well semiconductor structures allow small, fast, efficient optoelectronic devices such as optical modulators and switches. These are capable of logic themselves and have good potential for integration with electronic integrated circuits for parallel high speed interconnections. Devices can be made both in waveguides and two-dimensional parallel arrays. Working arrays of optical logic and memory devices have been demonstrated, to sizes as large as 2 048 elements, all externally accessible in parallel with free-space optics. This article gives an overview of the physics underlying the op

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14

Stokes, Edward, Adrienne D. Stiff-Roberts, and Charles T. Dameron. "Quantum Dots in Semiconductor Optoelectronic Devices." Electrochemical Society Interface 15, no. 4 (2006): 23–27. http://dx.doi.org/10.1149/2.f03064if.

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15

Piprek, Joachim. "Editorial: Simulation of semiconductor optoelectronic devices." IEE Proceedings - Optoelectronics 149, no. 4 (2002): 121. http://dx.doi.org/10.1049/ip-opt:20020665.

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16

Olimov, Lutfiddin Omanovich. "DETERMINATION OF EFFICIENT OPTICAL SOURCES OF AIR PROPAGATION FOR FISHERIES BIOPHYSICAL DEVICES." European International Journal of Multidisciplinary Research and Management Studies 02, no. 10 (2022): 01–08. http://dx.doi.org/10.55640/eijmrms-02-10-01.

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From the analysis of the literature, it is known that agricultural pest control devices designed to combat insects or for fishing attract flying insects, the growth of functional systems of Fish and fish larvae in one norm plays an important role in the development of light rays of optical radiation sources. Instruments with incandescent lamp, fluorescent, halogen or light-emitting semiconductor optoelectronic irradiators are widely used as sources of optical radiation in this area. When creating agricultural devices from them, light-emitting semiconductor optoelectronic devices are considered

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17

Zhuravlyova, L. M., M. R. Ivashevsky, and I. F. Muzafarov. "NEW MATERIALS IN OPTOELECTRONICS." World of Transport and Transportation 16, no. 2 (2018): 74–83. http://dx.doi.org/10.30932/1992-3252-2018-16-2-7.

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For the English abstract and full text of the article please see the attached PDF-File (English version follows Russian version). ABSTRACT The current problems of increasing the efficiency of optoelectronic devices with the help of new materials are considered in the article. It is noted that the most promising direction of research is the design of semiconductor materials using the own isotopes of chemical elements. Thus, purification from heavy isotopes increases the speed of optoelectronic devices, quantum efficiency, sensitivity of photodetectors. The greatest effect of isotope purificatio

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18

ابراهيم السنوسي نصر و احمد ابوسيف عبد الرحمن. "Interactive Learning Material for Optoelectronic Devices using MATLAB-based GUI." Journal of Pure & Applied Sciences 19, no. 2 (2020): 141–47. http://dx.doi.org/10.51984/jopas.v19i2.878.

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Optoelectronic devices have been a difficult subject to grasp for many university students who undertake electronic engineering. Many students find it difficult to understand the operation principle of the optoelectronic devices, for instance, how a solar cell device converts solar energy into electric energy or electricity, or the difference between types of semiconductor devices in terms of interaction between photons and electrons. Thus, the purpose of this paper is to design and implement an interactive and animated software package to aid students in understanding the concepts of the foll

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19

Sizov, F. "Uncooled Wide-Range Spectral Optoelectronic Devices on the Base of HgCdTe Semiconductor." Ukrainian Journal of Physics 60, no. 2 (2015): 114–19. http://dx.doi.org/10.15407/ujpe60.02.0114.

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20

Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (2023): 1395. http://dx.doi.org/10.3390/polym15061395.

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Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate

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21

Oh, Hongseok. "Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices." Ceramist 25, no. 4 (2022): 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.

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Semiconductor nanostructures or thin films are vital components of modern optoelectronic devices, such as light-emitting diodes, sensors, or transistors. While single crystalline wafers are used as heteroepitaxial templates for them, increasing demands on flexibility or transferability require separation of the grown semiconductor structures on such substrates, which is technically challenging and expensive. Recent research suggests that large-scale 2D nanomaterials can serve as heteroepitaxial templates and provide additional functionalities such as transferability to foreign substrates or me

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22

Wu, Xiaoyan, Wei Li, Qingrong Chen, et al. "Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films." Nanomaterials 12, no. 6 (2022): 899. http://dx.doi.org/10.3390/nano12060899.

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Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitrid

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23

Vinnakota, Raj K., Zuoming Dong, Andrew F. Briggs, Seth R. Bank, Daniel Wasserman, and Dentcho A. Genov. "Plasmonic electro-optic modulator based on degenerate semiconductor interfaces." Nanophotonics 9, no. 5 (2020): 1105–13. http://dx.doi.org/10.1515/nanoph-2019-0518.

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AbstractWe present a semiconductor-based optoelectronic switch based on active modulation of surface plasmon polaritons (SPPs) at lattice-matched indium gallium arsenide (In0.53Ga0.47As) degenerately doped pn++ junctions. The experimental device, which we refer to as a surface plasmon polariton diode (SPPD), is characterized electrically and optically, showing far-field reflectivity modulation for mid-IR wavelengths. Self-consistent electro-optic multiphysics simulations of the device’s electrical and electromagnetic response have been performed to estimate bias-dependent modulation and switch

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24

PANG Yuan-yuan, 庞渊源. "Application of Graphene in Semiconductor Optoelectronic Devices." Chinese Journal of Liquid Crystals and Displays 26, no. 3 (2011): 296–300. http://dx.doi.org/10.3788/yjyxs20112603.0296.

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25

Shaw, John A. "Book Review: Optoelectronic Semiconductor Devices: DAVID WOOD." International Journal of Electrical Engineering & Education 32, no. 4 (1995): 376–77. http://dx.doi.org/10.1177/002072099503200422.

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26

Iotti, Rita C., and Fausto Rossi. "Microscopic theory of semiconductor-based optoelectronic devices." Reports on Progress in Physics 68, no. 11 (2005): 2533–71. http://dx.doi.org/10.1088/0034-4885/68/11/r02.

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27

Goodfellow, R. C. "Applications and markets for semiconductor optoelectronic devices." Materials Science and Engineering: B 9, no. 1-3 (1991): 1–7. http://dx.doi.org/10.1016/0921-5107(91)90139-m.

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28

Hu, Laigui, Wei Jin, Rui Feng, et al. "Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces." Materials 11, no. 9 (2018): 1530. http://dx.doi.org/10.3390/ma11091530.

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Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at organic semiconductor-insulator interfaces, can also play a role for photocurrent generation. Photocurrent transients from organic devices, with insulator-semiconductor interfaces, were systematically studied by using the double-layer model with an equivalent circuit. Results indicated that the electric fields in photoinduced space-charge layers can b

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29

Ni, Junhao, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan, and Shaoqing Xiao. "Status and prospects of Ohmic contacts on two-dimensional semiconductors." Nanotechnology 33, no. 6 (2021): 062005. http://dx.doi.org/10.1088/1361-6528/ac2fe1.

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Abstract In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of bar

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30

Gao, Haikuo, Jinyu Liu, Zhengsheng Qin, et al. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors." Nanoscale 12, no. 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.

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31

Yao, Zhonghui, Cheng Jiang, Xu Wang, et al. "Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers." Nanomaterials 12, no. 7 (2022): 1058. http://dx.doi.org/10.3390/nano12071058.

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Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, ma

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32

Zafar, Fateen, and Azhar Iqbal. "Indium phosphide nanowires and their applications in optoelectronic devices." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 472, no. 2187 (2016): 20150804. http://dx.doi.org/10.1098/rspa.2015.0804.

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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vap

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33

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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34

Wu, Jieyun, Qing Li, Wen Wang, and Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups." Mini-Reviews in Organic Chemistry 16, no. 3 (2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.

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Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrie

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35

Zhu, Hongliang, Li Fan, Kaili Wang, Hao Liu, Jiawei Zhang, and Shancheng Yan. "Progress in the Synthesis and Application of Tellurium Nanomaterials." Nanomaterials 13, no. 14 (2023): 2057. http://dx.doi.org/10.3390/nano13142057.

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In recent decades, low-dimensional nanodevices have shown great potential to extend Moore’s Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure,

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36

Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, and Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics." Applied Physics Reviews 10, no. 1 (2023): 011310. http://dx.doi.org/10.1063/5.0090120.

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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetector

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37

Fortunato, Elvira, Alexandra Gonçalves, António Marques, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detecto

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38

Chen, Lijuan, Xiaoyan Li, Guoli Li, and Wei Hu. "Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film." Applied Physics Letters 121, no. 12 (2022): 121601. http://dx.doi.org/10.1063/5.0114047.

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Hybrid organic–inorganic perovskites have been widely studied in high-performance optoelectronic devices. Long-term stability is a key limitation to date in restricting their further development and commercial application. In general, interface properties between a semiconductor and an electrode highly affect device performance and stability. Herein, contact characteristics between the perovskite and electrode varying with illumination status have been first investigated. The results suggest that device's contact resistance ( RC), obtained from a transfer length method, decreases as the incide

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39

Fast, Jonatan, Urs Aeberhard, Stephen P. Bremner, and Heiner Linke. "Hot-carrier optoelectronic devices based on semiconductor nanowires." Applied Physics Reviews 8, no. 2 (2021): 021309. http://dx.doi.org/10.1063/5.0038263.

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40

Dutta, Niloy K. "Book Rvw: Semiconductor Optoelectronic Devices. By Pallab Bhattacharya." Optical Engineering 33, no. 08 (1994): 2813. http://dx.doi.org/10.1117/1.oe.33.8.bkrvw2.

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41

Clements, S. J. "Aspects of the processing of semiconductor optoelectronic devices." Vacuum 40, no. 4 (1990): 363–67. http://dx.doi.org/10.1016/0042-207x(90)90093-e.

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42

Kim, Hyunjin, Cuong Dang, Yoon-Kyu Song, et al. "Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices." physica status solidi (c) 4, no. 7 (2007): 2411–14. http://dx.doi.org/10.1002/pssc.200674924.

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43

Huang, Yu, and C. M. Lieber. "Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires." Pure and Applied Chemistry 76, no. 12 (2004): 2051–68. http://dx.doi.org/10.1351/pac200476122051.

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Semiconductor nanowires (NWs)represent an ideal system for investigating low-dimensional physics and are expected to play an important role as both interconnects and functional device elements in nanoscale electronic and optoelectronic devices. Here we review a series of key advances defining a new paradigm of bottom-up assembling integrated nanosystems using semiconductor NW building blocks. We first introduce a general approach for the synthesis of a broad range of semiconductor NWs with precisely controlled chemical composition, physical dimension, and electronic, optical properties using a

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44

Wang, Xue Yan, Jian Bang Zheng, Xiao Jiang Li та Chong De Cao. "Intrinsic Electronic Structures and Optical Anisotropy of α- and β-Phase Copper Phthalocyanine Molecular Crystals". Applied Mechanics and Materials 864 (квітень 2017): 133–41. http://dx.doi.org/10.4028/www.scientific.net/amm.864.133.

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Electronic structures and optical anisotropy of α- and β-phase copper phthalocyanine (CuPc) molecular crystals have been systemically investigated by first-principles calculations based on Density Functional Theory (DFT). Both crystals were shown to be small gap organic semiconductors with relatively flat and dispersionless bands. The α-CuPc was a direct band gap semiconductor, whereas the β-CuPc was an indirect band gap semiconductor. The analysis of Partial Density of States (PDOS) showed that the top of valance band was mainly contributed by N 2p and C 2p states; the bottom of the conductio

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45

Parkhomenko, Hryhorii P., Erik O. Shalenov, Zarina Umatova, Karlygash N. Dzhumagulova, and Askhat N. Jumabekov. "Fabrication of Flexible Quasi-Interdigitated Back-Contact Perovskite Solar Cells." Energies 15, no. 9 (2022): 3056. http://dx.doi.org/10.3390/en15093056.

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Perovskites are a promising class of semiconductor materials, which are being studied intensively for their applications in emerging new flexible optoelectronic devices. In this paper, device manufacturing and characterization of quasi-interdigitated back-contact perovskite solar cells fabricated on flexible substrates are studied. The photovoltaic parameters of the prepared flexible quasi-interdigitated back-contact perovskite solar cells (FQIBC PSCs) are obtained for the front- and rear-side illumination options. The dependences of the device’s open-circuit potential and short-circuit curren

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46

Yoo, Changhyeon, Tae-Jun Ko, Md Golam Kaium, et al. "A minireview on 2D materials-enabled optoelectronic artificial synaptic devices." APL Materials 10, no. 7 (2022): 070702. http://dx.doi.org/10.1063/5.0096053.

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Two-dimensional (2D) layered materials exhibit many unique properties, such as near-atomic thickness, electrical tunability, optical tunability, and mechanical deformability, which are characteristically distinct from conventional materials. They are particularly promising for next-generation biologically inspired optoelectronic artificial synapses, offering unprecedented opportunities beyond the current complementary metal–oxide–semiconductor-based computing device technologies. This Research update article introduces the recent exploration of various 2D materials for optoelectronic artificia

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Bain, Dipankar, Bipattaran Paramanik, Suparna Sadhu, and Amitava Patra. "A study into the role of surface capping on energy transfer in metal cluster–semiconductor nanocomposites." Nanoscale 7, no. 48 (2015): 20697–708. http://dx.doi.org/10.1039/c5nr06793f.

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Metal cluster–semiconductor nanocomposite materials remain a frontier area of research for the development of optoelectronic, photovoltaic and light harvesting devices because metal nanoclusters and semiconductor QDs are promising candidates for photon harvesting.

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Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defect

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Shin, Dong, and Suk-Ho Choi. "Graphene-Based Semiconductor Heterostructures for Photodetectors." Micromachines 9, no. 7 (2018): 350. http://dx.doi.org/10.3390/mi9070350.

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Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies a

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Leung, Benjamin, Jie Song, Yu Zhang, Miao-Chan Tsai, Ge Yuan, and Jung Han. "Using the Evolutionary Selection Principle in Selective Area Growth to Achieve Single-Crystalline GaN on SiO2." International Journal of High Speed Electronics and Systems 23, no. 01n02 (2014): 1450003. http://dx.doi.org/10.1142/s0129156414500037.

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Conventional epitaxial techniques requires single crystalline substrates to form semiconductor material of desired material quality for device applications. The use of amorphous substrates, in many applications, provides an opportunity to consider new materials and designs, which can fundamentally alter the performance, functionality and/or cost limitations of many optoelectronic devices. Here, a growth process is described to achieve single crystalline GaN material on amorphous SiO2. The evolutionary selection principle in crystal growth is the basis of this technique, and the mechanism is de

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