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Journal articles on the topic 'Optoelectronic devices Ultraviolet detectors'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

McClintock, R., and M. Razeghi. "GaN Based Optoelectronic Devices: From Ultraviolet Detectors and Visible Emitters towards THz Intersubband Devices." ECS Transactions 64, no. 7 (2014): 19–26. http://dx.doi.org/10.1149/06407.0019ecst.

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2

Li, Xiangyang, Ling Li, Huancheng Zhao, et al. "SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors." Nanomaterials 9, no. 9 (2019): 1324. http://dx.doi.org/10.3390/nano9091324.

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Synthesizing quantum dots (QDs) using simple methods and utilizing them in optoelectronic devices are active areas of research. In this paper, we fabricated SnSe2 QDs via sonication and a laser ablation process. Deionized water was used as a solvent, and there were no organic chemicals introduced in the process. It was a facile and environmentally-friendly method. We demonstrated an ultraviolet (UV)-detector based on monolayer graphene and SnSe2 QDs. The photoresponsivity of the detector was up to 7.5 × 106 mAW−1, and the photoresponse time was ~0.31 s. The n–n heterostructures between monolay

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3

Sun, Yuan Yuan, Xi He Zhang, Qiu Rui Jia, Zheng Li, and Shi Bo Liu. "Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector." Advanced Materials Research 717 (July 2013): 205–9. http://dx.doi.org/10.4028/www.scientific.net/amr.717.205.

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GaN semiconductor was one of the most promising semiconductor materials with direct wide band gap transition. It was regarded as one of the most desirable materials to prepare short wavelength optoelectronic devices for the good optoelectronic properties and excellent mechanical behavior. In this paper, n and p-type GaN films were prepared on Al2O3 substrates by MOCVD. Through the optimization of parameters, we obtained effective in doped Mg and carrier concentration for 1019. MSM structural ultraviolet photoelectric devices were prepared on GaN film by two step epitaxy growth method. The high

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4

Mohammad, S. N., W. Kim, A. Salvador, and H. Morkoç. "Reactive Molecular-Beam Epitaxy for Wurtzite GaN." MRS Bulletin 22, no. 2 (1997): 22–28. http://dx.doi.org/10.1557/s0883769400032528.

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A1N, GaN, and InN are very promising materials for use in optoelectronic and high-temperature electronic devices. These materials and their ternary and quaternary alloys cover an energy bandgap range of 1.9–6.2 eV, suitable for band-to-band light generation with colors ranging from red to ultraviolet (uv), with wavelengths ranging from 650 to 200 nm. On the device front, they are suitable for example for negative electron-affinity cold cathodes, electronic devices, surface acoustic wave devices, uv detectors, Bragg reflectors and waveguides, uv and visible light-emitting diodes (LEDs), and las

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5

Na, Hyun-Jae, Nam-Kwang Cho, Jintaek Park, et al. "A visible light detector based on a heterojunction phototransistor with a highly stable inorganic CsPbIxBr3−x perovskite and In–Ga–Zn–O semiconductor double-layer." Journal of Materials Chemistry C 7, no. 45 (2019): 14223–31. http://dx.doi.org/10.1039/c9tc04757c.

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An all-inorganic heterojunction phototransistor with perovskite (CsPbI<sub>x</sub>Br<sub>3−x</sub>) and IGZO is introduced to enhance the sensing performance of optoelectronic devices and to expand the detecting range from the ultraviolet to the visible light region.

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6

Kishibe, Kodai, Soichiro Hirata, Ryoichi Inoue, Tatsushi Yamashita, and Katsuaki Tanabe. "Wavelength-Conversion-Material-Mediated Semiconductor Wafer Bonding for Smart Optoelectronic Interconnects." Nanomaterials 9, no. 12 (2019): 1742. http://dx.doi.org/10.3390/nano9121742.

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A new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. The fabrication scheme provides simultaneous bond formation and interfacial function generation, leading to efficient device production. Wavelength-converting functionalized semiconductor interfacial engineering is realized by utilizing an adhesive viscous organic matrix with embedded fluorescent particles. The bonding is carried out in ambient air at room temperature and therefore provides a cost advantage with regard to device manufacturing. Distinct wavelength con

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7

Du, Xue Jian, Xian Jin Feng, Wei Guang Wang, Cai Na Luan, and Jin Ma. "Structural, Electrical and Optical Properties of Ternary Al₂_xIn_2(1-_x₎O₃ Films Prepared by Metal Organic Chemical Vapor Deposition." Materials Science Forum 898 (June 2017): 1796–803. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1796.

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New wide band gap semiconductors with tunable properties are desperately needed to meet the ever-increasing demands of photoelectric devices operating in the ultraviolet (UV) or even deep ultraviolet (DUV) region. In this study, the ternary aluminum indium oxide (Al2xIn2(1-x)O3) films with different Al compositions of x [Al/(Al+In) atomic ratio] were successfully grown on the α-Al2O3 (0001) substrates at 650 °C by metal organic chemical vapor deposition (MOCVD). The influence of Al content on the structural, compositional, electrical and optical properties of the obtained films was investigate

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8

Yahaya, Muhammad, Sin Tee Tan, Akrajas Ali Umar, C. C. Yap, and M. M. Salleh. "Synthesis of ZnO Nanorod Arrays by Chemical Solution and Microwave Method for Sensor Application." Key Engineering Materials 605 (April 2014): 585–88. http://dx.doi.org/10.4028/www.scientific.net/kem.605.585.

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One-dimensional ZnO semiconductor nanomaterials have been attracting increasing attention due to their outstanding properties, which are different from bulk materials. ZnO has a direct band gap of 3.37 eV and large exciton binding energy hence its nanowires and nanorods have been regarded as one of the most promising materials for nanoscale electronic and optoelectronic devices such as ultraviolet laser diodes, optical detectors and gas sensor. ZnO nanowires and nanorods have been successfully synthesized by various techniques such as evaporation, sputtering and pyrolysis. In this paper we rep

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9

Taffelli, Alberto, Sandra Dirè, Alberto Quaranta, and Lucio Pancheri. "MoS2 Based Photodetectors: A Review." Sensors 21, no. 8 (2021): 2758. http://dx.doi.org/10.3390/s21082758.

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Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namel

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10

Mballo, Adama, Ashutosh Srivastava, Suresh Sundaram, et al. "Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions." Nanomaterials 11, no. 1 (2021): 211. http://dx.doi.org/10.3390/nano11010211.

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Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporation in h-BN was studied under different biscyclopentadienyl-magnesium (Cp2Mg) molar flow rates. 2θ-ω x-ray diffraction scans clearly evidence a single peak, corresponding to the (002) reflection plane of h-BN with a full-width half maximum increasing with Mg incorporation in h-BN. For a large range

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11

Razeghi, M. "III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz." IEEE Photonics Journal 3, no. 2 (2011): 263–67. http://dx.doi.org/10.1109/jphot.2011.2135340.

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12

Häyrynen, Teppo, Jani Oksanen, and Jukka Tulkki. "Quantum trajectory model for photon detectors and optoelectronic devices." Physica Scripta T143 (February 1, 2011): 014011. http://dx.doi.org/10.1088/0031-8949/2011/t143/014011.

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13

Sivanand, R., S. Chellammal, and S. Manivannan. "Cadmium Sulphide Nanocrystallites for Optoelectronic Devices." Materials Science Forum 969 (August 2019): 237–41. http://dx.doi.org/10.4028/www.scientific.net/msf.969.237.

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Cadmium sulphide nanocrystallites have been synthesized using precipitation method. The average sizes of the prepared samples is determined by XRD (x-ray diffraction) method. Morphological studies are carried out by SEM (scanning electron microscopy) measurement. Necesssary elements present in prepared samples, are confirmed by EDAX (energy dispersive analysis of x-ray spectroscopy) method. By Ultraviolet visible spectroscopy measurement, the value of absorption wavelength, band gap values are calculated in optical method. The electrical properties are analysed using impedance analyser measure

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14

MacDonald, R. I. "Optoelectronic matrix switching." Canadian Journal of Physics 67, no. 4 (1989): 389–93. http://dx.doi.org/10.1139/p89-069.

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Because cross talk from electromagnetic coupling increases with frequency, it is difficult to design matrix switches for high-frequency electronic signals. Signals on optical carriers are easier to isolate but more difficult to switch. A hybrid technique exploiting passive optical-signal distribution and switching by optoelectronic effects shows good promise for high isolation matrices to handle signals in the dc to 10 GHz range. The key elements for such optoelectronic switches are optical detectors that have switchable sensitivity.Initial efforts in optoelectronic switching used silicon diod

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15

Starasotnikau, M. A., I. V. Padskrebkin, and R. V. Feodortsau. "Method for Determining Elements of Internal Orientation Calibration in Multi-Matrix Optoelectronic Devices." Science & Technique 19, no. 5 (2020): 428–36. http://dx.doi.org/10.21122/2227-1031-2020-19-5-428-436.

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In the operation schemes of optical electronic devices (OED), such as digital autocollimators, direction finders, Shack-Hartmann sensors, as well as astro-orientation systems, projection measuring systems, geometric calibration schemes for OED, the photo-detector acts not only as a receiving device, but also as a measuring device. The tasks facing the OED photo-detectors. The solution to the problem is the use of several photo-detectors installed on one electronic board. Since OED photo-detectors act, inter alia, as measuring devices, it is necessary to perform their geometric calibration. Geo

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16

Singh, Arun Kumar, Shaista Andleeb, Jai Singh, and Jonghwa Eom. "Tailoring the electrical properties of multilayer MoS2 transistors using ultraviolet light irradiation." RSC Advances 5, no. 94 (2015): 77014–18. http://dx.doi.org/10.1039/c5ra14509k.

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Modulating the electronic properties of MoS<sub>2</sub> is essential in order to obtain the best performance of its electronic and optoelectronic devices as well as enabling fabrication of various complex devices.

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17

Iqbal, M. Z., M. W. Iqbal, M. F. Khan, and Jonghwa Eom. "Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene." Physical Chemistry Chemical Physics 17, no. 32 (2015): 20551–56. http://dx.doi.org/10.1039/c5cp02159f.

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18

Gao, Jie, Yifeng Duan, Changming Zhao, et al. "Prediction of new ZnS–CaS alloys with anomalous electronic properties." Journal of Materials Chemistry C 7, no. 5 (2019): 1246–54. http://dx.doi.org/10.1039/c8tc05133j.

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19

Bielecki, Zbigniew, Jacek Janucki, Adam Kawalec, et al. "Sensors and Systems for the Detection of Explosive Devices - An Overview." Metrology and Measurement Systems 19, no. 1 (2012): 3–28. http://dx.doi.org/10.2478/v10178-012-0001-3.

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Sensors and Systems for the Detection of Explosive Devices - An Overview The paper presents analyses of current research projects connected with explosive material sensors. Sensors are described assigned to X and γ radiation, optical radiation sensors, as well as detectors applied in gas chromatography, electrochemical and chemical sensors. Furthermore, neutron techniques and magnetic resonance devices were analyzed. Special attention was drawn to optoelectronic sensors of explosive devices.

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20

Moustakas, Theodore D. "Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy." MRS Communications 6, no. 3 (2016): 247–69. http://dx.doi.org/10.1557/mrc.2016.26.

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21

Qiao, Shuang, Kaiyu Feng, Zhiqang Li, Guangsheng Fu, and Shufang Wang. "Ultrahigh, ultrafast and large response size visible-near-infrared optical position sensitive detectors based on CIGS structures." Journal of Materials Chemistry C 5, no. 20 (2017): 4915–22. http://dx.doi.org/10.1039/c7tc01462g.

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CIGS-based heterostructures have been demonstrated to achieve superior high absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices.

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22

Yong, Dingyu, Haiyan He, Longxing Su, et al. "Understanding the origin of phase segregation of nano-crystalline in a BexZn1−xO random alloy: a novel phase of Be1/3Zn2/3O." Nanoscale 7, no. 21 (2015): 9852–58. http://dx.doi.org/10.1039/c5nr00832h.

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23

Zhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, et al. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction." Nanophotonics 6, no. 5 (2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.

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AbstractIn this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure

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24

Huang, Chen, Haochen Zhang, and Haiding Sun. "Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system." Nano Energy 77 (November 2020): 105149. http://dx.doi.org/10.1016/j.nanoen.2020.105149.

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25

Wang, L. K., Z. G. Ju, J. Y. Zhang, et al. "Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices." Applied Physics Letters 95, no. 13 (2009): 131113. http://dx.doi.org/10.1063/1.3238571.

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26

Park, Seoung-Hwan, and Doyeol Ahn. "Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices." IEEE Photonics Technology Letters 28, no. 20 (2016): 2153–55. http://dx.doi.org/10.1109/lpt.2016.2585497.

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27

Khan, Asif, and Krishnan Balakrishnan. "Present Status of Deep UV Nitride Light Emitters." Materials Science Forum 590 (August 2008): 141–74. http://dx.doi.org/10.4028/www.scientific.net/msf.590.141.

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Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of deep-UV light-emitting devices with emission from 400 to 210 nm with varying efficiencies. For high aluminum alloy compositions needed for the shorter wavelength devices, these materials border between having material properties like conventional semiconductors and insulators, adding a degree of complexity to developing efficient light emitting devices. This chapter provid

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28

Lin, Shih-Hsun, Jian-Shian Lin, Nien-Po Chen, et al. "Synthesis of ultraviolet curable encapsulating adhesives and their package applications for organic optoelectronic devices." Solid State Sciences 13, no. 10 (2011): 1889–95. http://dx.doi.org/10.1016/j.solidstatesciences.2011.08.002.

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29

Zhao, Kun, Hui Bin Lu, and Meng He. "Manganite-Based Heterojunction Position-Sensitive Detectors." Key Engineering Materials 368-372 (February 2008): 345–47. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.345.

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Position-sensitive photodetectors, a useful class of sensor with a wide range of applications in automatization and measuring techniques, on the basis of a La0.7Sr0.3MnO3/Si heterojunction have been developed. Thin p-La0.7Sr0.3MnO3 films were grown on n-Si substrates by laser molecular beam epitaxy. The large lateral photovoltaic effect has been observed in response to excitation by ultraviolet laser spot irradiation. The position characteristics are symmetric to the zero and linear between the contacts. The devices work well under unbiased conditions and so are simple to configure for practic

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30

Fryett, Taylor, Alan Zhan, and Arka Majumdar. "Cavity nonlinear optics with layered materials." Nanophotonics 7, no. 2 (2017): 355–70. http://dx.doi.org/10.1515/nanoph-2017-0069.

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AbstractUnprecedented material compatibility and ease of integration, in addition to the unique and diverse optoelectronic properties of layered materials, have generated significant interest in their utilization in nanophotonic devices. While initial nanophotonic experiments with layered materials primarily focused on light sources, modulators, and detectors, recent efforts have included nonlinear optical devices. In this paper, we review the current state of cavity-enhanced nonlinear optics with layered materials. Along with conventional nonlinear optics related to harmonic generation, we re

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Boukhachem, A., A. Amlouk, K. Boubaker, M. Bouhafs, and M. Amlouk. "An Attempt to Optimize ZnO-Like TCO Nanolayered Compound Thickness in Terms of a BPES-Related Physical Parameters Pondering." ISRN Nanomaterials 2012 (September 6, 2012): 1–6. http://dx.doi.org/10.5402/2012/492109.

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Recently, metal oxide nanolayered semiconductors revealed their increasing usefulness as UV detectors and transparent conductors in optoelectronic devices. In the present paper, a simple fabrication process has been carried out to prepare layered TCO compounds with different controlled thicknesses. Conjoint physical investigations allowed discussion of the validity of optimality in terms of geometrical parameters. A synthetic function based on pondered physical parameters was a practical guide to reach optimality.

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32

Alam, Injamul, Kadambinee Sa, Sonali Das, et al. "Study of electrical properties of a few layers of graphene sheets under Ultraviolet and Visible light irradation." International Journal of Innovative Research in Physics 2, no. 4 (2021): 8–14. http://dx.doi.org/10.15864/ijiip.2402.

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Graphene is an excellent 2D material due to its exceptional electrical properties which can be potentially used in optoelectronic. In order to use graphene in optoelectronics, the electrical properties need to be tuned. To tune electrical properties, few-layer graphene sheets (FLGS) prepared by electrochemical method have been used. The prepared FLGS has been characterized by Field Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscope (TEM), X-ray Diffraction (XRD), Ultraviolet-Visible Spectroscopy (UV-Vis), Fourier Transform Infrared (FTIR), and Raman Spectroscopy. T

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33

Muth, J. F., J. D. Brown, M. A. L. Johnson, et al. "Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 502–7. http://dx.doi.org/10.1557/s1092578300002957.

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The design of optoelectronic devices fabricated from III-nitride materials is aided by knowledge of the refractive index and absorption coefficient of these materials. The optical properties of GaN, AlN and AlGaN grown by MOVPE on sapphire substrates were investigated by means of transmittance and reflectance measurements. Thin (less than 0.5 μm) single crystal films were employed to insure that transmission measurements could be obtained well above the optical band gap. The influence of alloy broadening on the absorption edge was investigated by using a series of AlGaN alloy samples with a ra

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34

Fortunato, Elvira, Alexandra Gonçalves, António Marques, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detecto

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35

Floyd, Richard, Kamal Hussain, Abdullah Mamun, et al. "An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices." physica status solidi (a) 217, no. 7 (2020): 1900801. http://dx.doi.org/10.1002/pssa.201900801.

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36

Zuo, Sibin, Haiyun Zhang, Jun Wang, and Wenjun Wang. "Ultraviolet emission from high-quality crystalline ultra-long AlN whiskers." Powder Diffraction 29, no. 1 (2013): 3–7. http://dx.doi.org/10.1017/s0885715613000687.

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We report here the fabrication and characterization of ultra-long AlN whiskers by physical vapor transport method. The obtained whiskers are 1–3 µm in diameter and up to millimeters in length. The whiskers grow along the [0001] crystallographic direction and are well crystallized. They exhibit a strong ultraviolet emission at 345 nm, the shortest wavelength reported in AlN whiskers or nanowires. Our results indicate that these large scales of AlN whiskers are less contaminated by oxygen and other impurities compared with the previously reported ones, which may find wide applications in fabrica

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Sun, Yuan Yuan, Shi Bo Liu, Jia Yue Ren, Yong Bing Zhong, and Qiu Rui Jia. "Research on the Performance of P-i- n Type GaN Ultraviolet Photoelectric Detector." Advanced Materials Research 694-697 (May 2013): 1021–24. http://dx.doi.org/10.4028/www.scientific.net/amr.694-697.1021.

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GaN ultraviolet photoelectric detecting technique has important application value in the spacecraft, fire monitoring, ultraviolet communication and other fields. In this paper, p-type GaN samples were obtained after rapid annealing of GaN mixing Mg at 700~800°C. Then, p-i-n type GaN ultraviolet photoelectric detectors were fabricated on Al2O3 substrates by metal organic chemical vapor phase epitaxial deposition method. The devices have better rectifying behavior which can be demonstrated by the I-V curve. The response time of the device is 1.6µs and its higher responsivity is 0.95A/W.

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Bilal, Muhammad, Wen Xu, Chao Wang, et al. "Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy." Nanomaterials 10, no. 4 (2020): 762. http://dx.doi.org/10.3390/nano10040762.

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Monolayer (ML) hexagonal boron nitride (hBN) is an important material in making, e.g., deep ultraviolet optoelectronic and power devices and van der Waals heterojunctions in combination with other two-dimensional (2D) electronic systems such as graphene and ML MoS 2 . In this work, we present a comparative study of the basic optoelectronic properties of low resistance ML hBN placed on different substrates such as SiO 2 /Si, quartz, PET, and sapphire. The measurement is carried out by using terahertz (THz) time-domain spectroscopy (TDS) in a temperature regime from 80 to 280 K. We find that the

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Apretna, Thibault, Sylvain Massabeau, Charlie Gréboval, et al. "Few picosecond dynamics of intraband transitions in THz HgTe nanocrystals." Nanophotonics 10, no. 10 (2021): 2753–63. http://dx.doi.org/10.1515/nanoph-2021-0249.

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Abstract Optoelectronic devices based on intraband or intersublevel transitions in semiconductors are important building blocks of the current THz technology. Large nanocrystals (NCs) of Mercury telluride (HgTe) are promising semiconductor candidates owing to their intraband absorption peak tunable from 60 THz to 4 THz. However, the physical nature of this THz absorption remains elusive as, in this spectral range, quantum confinement and Coulomb repulsion effects can coexist. Further, the carrier dynamics at low energy in HgTe NCs, which strongly impact the performances of THz optoelectronic d

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40

Nie, Lingfang, Xiaoxing Ke, and Manling Sui. "Microstructural Study of Two-Dimensional Organic-Inorganic Hybrid Perovskite Nanosheet Degradation under Illumination." Nanomaterials 9, no. 5 (2019): 722. http://dx.doi.org/10.3390/nano9050722.

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Two-dimensional (2D) organic-inorganic hybrid perovskite materials have received substantial attention because of their exceptional optoelectronic properties. Although the applications of 2D perovskite nanosheets are promising in various optoelectronic devices, which all face harsh working conditions of light exposure, little is known about the photo-stability and degradation mechanisms of these 2D perovskite nanosheets. In this work, degradation of (C4H9NH3)2PbBr4 (BA2PbBr4) nanosheets when exposed to ultraviolet (UV) light and white light is explored. The morphology, optical properties, and

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41

Chen, Shao Bo, Kai Li Yao, Ping Huang, Ze Lan Jiang, Shi Lian Lv, and Zheng Song Luo. "First Principles Study on Magnetic and Optical Properties of Single Layer CrSi₂." Key Engineering Materials 787 (November 2018): 53–59. http://dx.doi.org/10.4028/www.scientific.net/kem.787.53.

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According to first-principle based on the density functional theory, the magnetic and optical properties of single layer CrSi2are calculated and analyzed by plane wave pseudo potential method. The band structure, density of state, optical absorption spectra, reflectivity and energy loss function of single layer CrSi2are obtained. The results show that single layer CrSi2has the properties of metal and magnetism. The calculations of optical properties of single layer CrSi2material deduce that it can absorb photons which belong to visible to ultraviolet region, even in far-infrared and far-ultrav

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42

Bonanno, Giovanni. "New Developments in CCD Technology for the UV-EUV Spectral Range." Symposium - International Astronomical Union 167 (1995): 39–48. http://dx.doi.org/10.1017/s0074180900056242.

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Lately, Charge Coupled Device (CCD) detectors have had great advances both in the visible and in the X-ray spectral range. However, the technology applied to these devices in the ultraviolet (UV) spectral region has not developed as well, because of some problems connected with the interaction between UV radiation and the materials typically used in semiconductor technology. In our laboratory the ultraviolet response of some UV-enhanced CCDs has been investigated. In particular, the quantum efficiency of coronene and lumigen coated and of back-illuminated ion implanted CCDs have been measured

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Gessert, T. A., E. Colegrove, B. Stafford, et al. "II-VI Material Integration With Silicon for Detector and PV Applications." MRS Advances 1, no. 50 (2016): 3391–402. http://dx.doi.org/10.1557/adv.2016.408.

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ABSTRACTHeteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe

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Zhao, Man, Da Yong Jiang, Wen Jing Liu, Guang Yang, and De Jun Li. "Ultraviolet Photodetectors Based on MgZnO Thin Films." Advanced Materials Research 852 (January 2014): 291–95. http://dx.doi.org/10.4028/www.scientific.net/amr.852.291.

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In recent years, MgZnO alloy becomes one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated three metal semiconductor metal (MSM) photodetectors on Mg0.42Zn0.58O film grown by radio frequency magnetron sputtering. The interdigital electrodes are 500 um long and 5 um wide with an interelectrode spacing 2, 5 and 10 um, respectively. The structural, electrical and optical properties of epilayers were characterized by various techniques. At 5 V bias, a peak responsivity of 1.09 mA/W was achieved at 283 nm for the device with 2 um interele

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Chung, Ming-Hua, Jian-Shian Lin, Tsung-Eong Hsieh, et al. "Preparation of organic/inorganic hybrid nanocomposites by ultraviolet irradiation and their packaging applications for organic optoelectronic devices." Applied Surface Science 257, no. 21 (2011): 9142–51. http://dx.doi.org/10.1016/j.apsusc.2011.05.117.

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Kashif, M., U. Hashim, M. E. Ali, K. L. Foo, and Syed M. Usman Ali. "Morphological, Structural, and Electrical Characterization of Sol-Gel-Synthesized ZnO Nanorods." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/478942.

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ZnO nanorods were grown on thermally oxidized p-type silicon substrate using sol-gel method. The SEM image revealed high-density, well-aligned, and perpendicular ZnO nanorods on the oxidized silicon substrate. The XRD profile confirmed thec-axis orientation of the nanorods. PL measurements showed the synthesized ZnO nanorods have strong ultraviolet (UV) emission. The electrical characterization was performed using interdigitated silver electrodes to investigate the stability in the current flow of the fabricated device under different ultraviolet (UV) exposure times. It was notified that a sta

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Wang, Jiang, Wei Ping Jing, and Yan Jin Li. "Design of Readout Circuit for Pyroelectric Detector Based on Novel Pyroelectric Materials." Advanced Materials Research 361-363 (October 2011): 1918–21. http://dx.doi.org/10.4028/www.scientific.net/amr.361-363.1918.

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Recently, scientists discovered that relaxor-based ferroelectric single crystals, such as (1-x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3 (PMN-xPT, or PMNT) single crystals, exhibit extra-high pyroelectric responses. They are promising candidates for optical power detectors in broad bandwidth at ultraviolet, visible and infrared wavelength.To fabricate high performance infrared detectors with relaxor-based single crystals, the related readout circuit was investigated to increase signal-to-noise ratio, and 8×1 CMOS readout circuit is fabricated to gain very weak current, which provides a solution for uncooled l

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Singh, Shaivalini, Yogesh Kumar, Hemant Kumar, et al. "A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates." Nanomaterials and Nanotechnology 7 (January 1, 2017): 184798041770214. http://dx.doi.org/10.1177/1847980417702144.

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This study reports hydrothermally grown zinc oxide nanorod-based metal-semiconductor-metal ultraviolet detectors with palladium metal as the electrodes. The zinc oxide nanorods were deposited on glass substrates in two steps, seed layer deposition and growth of nanorods. The structural and optical properties of nanorods were examined using scanning electron microscopy and ultraviolet–vis spectroscopy, respectively. The scanning electron microscopy image showed that the growth of nanorods was uniform, and the ultraviolet–vis results indicate that the bandgap of zinc oxide nanorods was 3.23 eV.

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Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other p

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Lee, Chang-Ju, Chul-Ho Won, Jung-Hee Lee, Sung-Ho Hahm, and Hongsik Park. "GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate." Sensors 19, no. 5 (2019): 1051. http://dx.doi.org/10.3390/s19051051.

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The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconduct

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