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Journal articles on the topic 'Optoelectronic transistors'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

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1

Wang, Yiru, Shanshuo Liu, Hongxin Zhang, et al. "Adaptive optoelectronic transistor for intelligent vision system." Journal of Semiconductors 46, no. 2 (2025): 021404. https://doi.org/10.1088/1674-4926/24100042.

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Abstract Recently, for developing neuromorphic visual systems, adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances and flexible functionalities. In this review, based on a description of the biological adaptive functions that are favorable for dynamically perceiving, filtering, and processing information in the varying environment, we summarize the representative strategies for achieving these adaptabilities in optoelectronic transistors, including the adaptation for detecting inform

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2

Shao, Shuangshuang, Suyun Wang, Chenyong Xu, Jianwen Zhao, and Zheng Cui. "70‐1: Fully‐Printed High‐Resolution Low‐Voltage IGZO Optoelectronic Synaptic Transistor Arrays for Visual Neural Computation." SID Symposium Digest of Technical Papers 56, S1 (2025): 613–16. https://doi.org/10.1002/sdtp.18882.

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Printable oxide transistors serve as crucial optoelectronic synaptic devices for emulating the human visual cognitive system. However, the widespread application of printed oxide synaptic transistors in complex neuromorphic computing has been hindered by challenges in achieving high resolution and superior electrical performance. In this study, we present fully‐printed, high‐resolution indium gallium zinc oxide (IGZO) optoelectronic synaptic transistor arrays featuring high‐precision indium tin oxide (ITO) as electrodes with an ultra‐short channel length of 1.5 µm. The fabricated IGZO synaptic

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3

Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)." Materials 14, no. 13 (2021): 3756. http://dx.doi.org/10.3390/ma14133756.

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Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate o

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4

Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this

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5

Ma, Xinqi, Wenbin Zhang, Qi Zheng, et al. "Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access." Journal of Semiconductors 46, no. 2 (2025): 022406. https://doi.org/10.1088/1674-4926/24090051.

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Abstract In this data explosion era, ensuring the secure storage, access, and transmission of information is imperative, encompassing all aspects ranging from safeguarding personal devices to formulating national information security strategies. Leveraging the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after reading, thereby guaranteeing data security. In this study, a reconfigurable ambipolar optoelectronic

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6

Lan, Shuqiong, Jinkui Si, Wangying Xu, Lan Yang, Jierui Lin, and Chen Wu. "Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots." Nanomaterials 15, no. 9 (2025): 688. https://doi.org/10.3390/nano15090688.

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The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware foundation for the realization of neuromorphic computing and plays a pivotal role in the development of neuromorphic chips. This study develops a ternary heterojunction synaptic transistor based on perovskite quantum dots to tackle the critical challenge of synaptic weight modulation in organic synaptic devices. Compared to binary heterojunction synapti

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Pan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication." MRS Advances 5, no. 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.

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AbstractTraditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fab

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8

Huseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.

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Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect

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Yu, Jia, Shiru Wu, Xun Zhao, et al. "Progress on Two-Dimensional Transitional Metal Dichalcogenides Alloy Materials: Growth, Characterisation, and Optoelectronic Applications." Nanomaterials 13, no. 21 (2023): 2843. http://dx.doi.org/10.3390/nano13212843.

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Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered remarkable attention in electronics, optoelectronics, and hydrogen precipitation catalysis due to their exceptional physicochemical properties. Their utilisation in optoelectronic devices is especially notable for overcoming graphene’s zero-band gap limitation. Moreover, TMDs offer advantages such as direct band gap transitions, high carrier mobility, and efficient switching ratios. Achieving precise adjustments to the electronic properties and band gap of 2D semiconductor materials is crucial for enhancing their capa

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10

Zhang, Junyao, Yang Lu, Shilei Dai, et al. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems." Research 2021 (February 22, 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.

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For the realization of retina-inspired neuromorphic visual systems which simulate basic functions of human visual systems, optoelectronic synapses capable of combining perceiving, processing, and memorizing in a single device have attracted immense interests. Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)3) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. The organic heterojunction serves as a basis for distinctive synaptic characteristics under different wavelengths of light. Furthermore, synaptic transistor a

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11

Gao, Haikuo, Jinyu Liu, Zhengsheng Qin, et al. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors." Nanoscale 12, no. 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.

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12

Bi, Jinming, Yanran Li, Rong Lu, Honglin Song, and Jie Jiang. "Electrolyte-gated optoelectronic transistors for neuromorphic applications." Journal of Semiconductors 46, no. 2 (2025): 021401. https://doi.org/10.1088/1674-4926/24090042.

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Abstract The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learning, rendering it incapable of meeting the growing demand for efficient and high-speed computing. Neuromorphic computing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence. Among various neuromorphic devices, the artificial synapses based on electrolyte-gated transistors stand out due to their low

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13

Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other p

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Wu, Jieyun, Qing Li, Wen Wang, and Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups." Mini-Reviews in Organic Chemistry 16, no. 3 (2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.

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Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrie

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15

Nowsherwan, Ghazi Aman, Qasim Ali, Umar Farooq Ali, Muhammad Ahmad, Mohsin Khan, and Syed Sajjad Hussain. "Advances in Organic Materials for Next-Generation Optoelectronics: Potential and Challenges." Organics 5, no. 4 (2024): 520–60. http://dx.doi.org/10.3390/org5040028.

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This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-a

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16

Urey, Z., D. Wake, D. J. Newson, and I. D. Henning. "Comparison of InGaAs transistors as optoelectronic mixers." Electronics Letters 29, no. 20 (1993): 1796. http://dx.doi.org/10.1049/el:19931195.

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17

Cheng, Jinbing, Junbao He, Chunying Pu, et al. "MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness." Energies 15, no. 17 (2022): 6169. http://dx.doi.org/10.3390/en15176169.

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Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (ΦB) and contact resistance are obstacles hampering the fabrication of high-power MoS2 transistors. The electronic transport characteristics of MoS2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS2 channel and copper (Cu) metal–TiO2-MoS2 channel. C

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18

Hong, Tu, Bhim Chamlagain, Wenzhi Lin, et al. "Polarized photocurrent response in black phosphorus field-effect transistors." Nanoscale 6, no. 15 (2014): 8978–83. http://dx.doi.org/10.1039/c4nr02164a.

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19

Luo, Xianqi. "Applications of 2D semiconductor materials in electronics and optoelectronics." Highlights in Science, Engineering and Technology 87 (March 26, 2024): 148–54. http://dx.doi.org/10.54097/pj6few58.

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Due to the demand for the higher performance of electronic and optoelectronic devices, the research of 2D semiconductor materials is very important nowadays. Because of the excellent electronic and optoelectronic properties of 2D semiconductor materials can be applied in many fields. This article mainly introduced the preparation, properties and applications of 2D semiconductor materials. The applications in electronics and optoelectronics are mainly discussed, such logic gates, field effect transistors light emitting diodes and high responsivity photodetectors. Compared to traditional semicon

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20

Nie, Yiling, Pengshan Xie, Xu Chen, et al. "Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors." Journal of Semiconductors 43, no. 11 (2022): 112201. http://dx.doi.org/10.1088/1674-4926/43/11/112201.

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Abstract The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing. Herein, a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and indium gallium arsenide (InGaAs) nanowires (NWs) hybrid heterojunction thin film as the active layer. Under illumination, the Type-I C8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to recombine. The persistent photoconductivity caused by charge trappi

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21

Trukhanov, Vasiliy A., Andrey Y. Sosorev, Dmitry I. Dominskiy, et al. "Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity." Molecules 29, no. 11 (2024): 2533. http://dx.doi.org/10.3390/molecules29112533.

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Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowe

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22

Thompson, Avery. "Applying ferroelectric materials in transistors for electronic and optoelectronic applications." Scilight 2023, no. 8 (2023): 081106. http://dx.doi.org/10.1063/10.0017443.

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23

Yuvaraja, Saravanan, Ali Nawaz, Qian Liu, et al. "Organic field-effect transistor-based flexible sensors." Chemical Society Reviews 49, no. 11 (2020): 3423–60. http://dx.doi.org/10.1039/c9cs00811j.

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Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.

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Guo, Pu, Junyao Zhang, and Jia Huang. "Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration." Journal of Semiconductors 46, no. 2 (2025): 021405. https://doi.org/10.1088/1674-4926/24120017.

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Abstract The rapid growth of artificial intelligence has accelerated data generation, which increasingly exposes the limitations faced by traditional computational architectures, particularly in terms of energy consumption and data latency. In contrast, data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage. Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric computing paradigm owing to their superiority of flexibility, low cost, and large-area fabrication. However,

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25

Jin, Qingqing, Yunqi Xug, Mengmeng Li, and Ling Li. "38‐2: Small‐Subthreshold‐Swing and Low‐Voltage Organic Field‐Effect Transistors with Excellent Uniformity Using A Circular Architecture." SID Symposium Digest of Technical Papers 56, S1 (2025): 318–22. https://doi.org/10.1002/sdtp.18796.

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Organic field‐effect transistors have garnered extensive attention due to their unique advantages such as mechanical flexibility, low‐temperature processability, tunable optoelectronic properties, lightweight nature and potential for mass production, with immense potential in emerging fields such as the internet of things (IoT) and artificial intelligence (AI). However, organic transistors often utilize a high operating voltage (the maximum value between a drain voltage and a gate voltage) ranging from ±20 V to ±100 V, and their subthreshold swing (SS) is generally higher than 500 mV/dec. In t

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Dai, Z. R., Sangbeom Kang, W. Alan Doolittle, Z. L. Wang, and April S. Brown. "Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy." Microscopy and Microanalysis 6, S2 (2000): 1106–7. http://dx.doi.org/10.1017/s1431927600038022.

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The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usual

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Chen, Yusheng, Yifan Yao, Nicholas Turetta, and Paolo Samorì. "Vertical organic transistors with short channels for multifunctional optoelectronic devices." Journal of Materials Chemistry C 10, no. 7 (2022): 2494–506. http://dx.doi.org/10.1039/d1tc05055a.

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28

LEE, YOUNGBIN, and JONG-HYUN AHN. "GRAPHENE-BASED TRANSPARENT CONDUCTIVE FILMS." Nano 08, no. 03 (2013): 1330001. http://dx.doi.org/10.1142/s1793292013300016.

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Graphene is a promising alternative to indium tin oxide for use in transparent conducting electrodes. We review recent progress in production methods of graphene and its applications in optoelectronic devices such as touch panel screens, organic photovoltaic cells, organic light emitting diodes and thin film transistors. In addition, we discuss important criteria such as optical transmittance, electrical conductivity and work function, which are critical considerations in the integration of graphene conductive films with optoelectronic devices.

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Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, and Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics." Applied Physics Reviews 10, no. 1 (2023): 011310. http://dx.doi.org/10.1063/5.0090120.

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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetector

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30

Moram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.

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ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

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Dong, Mi-Mi, Guang-Ping Zhang, Zong-Liang Li, Ming-Lang Wang, Chuan-Kui Wang, and Xiao-Xiao Fu. "Anisotropic interfacial properties of monolayer C2N field effect transistors." Physical Chemistry Chemical Physics 22, no. 48 (2020): 28074–85. http://dx.doi.org/10.1039/d0cp04450d.

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32

Wang, Gongming, Dehui Li, Hung-Chieh Cheng, et al. "Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics." Science Advances 1, no. 9 (2015): e1500613. http://dx.doi.org/10.1126/sciadv.1500613.

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Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercal

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Wang, Lin, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen, and Kah-Wee Ang. "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics." Nanoscale 10, no. 29 (2018): 14359–67. http://dx.doi.org/10.1039/c8nr03207f.

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Here, we explore the potential of naturally formed black phosphorus heterojunction for optoelectronic application. As a result, BP heterojunction transistor not only enables gate-tunable photodetection with decent performance, but also has potential for infrared photovoltaics.

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Xie, Ling-Hai, Su-Hui Yang, Jin-Yi Lin, Ming-Dong Yi, and Wei Huang. "Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 2000 (2013): 20120337. http://dx.doi.org/10.1098/rsta.2012.0337.

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Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical wa

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Zhou, Wenhan, Shengli Zhang, Shiying Guo, et al. "High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study." Nanoscale 12, no. 36 (2020): 18931–37. http://dx.doi.org/10.1039/d0nr04129g.

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Huo, Ziwei, Jinran Yu, Yonghai Li, Zhong Lin Wang, and Qijun Sun. "2D tribotronic transistors." Journal of Physics: Energy, November 2, 2022. http://dx.doi.org/10.1088/2515-7655/ac9f6c.

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Abstract Since the discovery of graphene, 2D materials have been widely applied to field-effect transistors (FETs) due to their great potential in optoelectronics, photodetectors, intelligent sensors, and neuromorphic devices. By integrating 2D transistor with triboelectric nanogenerator (TENG) into tribotronic transistor, the induced triboelectric potential can readily regulate the charge carrier transport characteristics in semiconductor channel. The emerging research field of tribotronics (mainly tribotronic transistors) has gained extensive attentions due to their significant applications

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Wang, Yunuan, Jianxiang Liu, Yujun Liu, Shaopeng Li, Xiulai Xu, and Zhidong Lou. "Recent Advances of Lead-Free Halide Perovskites: From Synthesis to Applications." Journal of Materials Chemistry C, 2024. http://dx.doi.org/10.1039/d4tc01556h.

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Lead-based halide perovskites have taken semiconductor optoelectronics research by storm due to their impressive optical and optoelectronic properties, and have emerged as promising candidates for high-performance solar cells, transistors, light-emitting...

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38

Montanaro, A., W. Wei, D. De Fazio, et al. "Optoelectronic mixing with high-frequency graphene transistors." Nature Communications 12, no. 1 (2021). http://dx.doi.org/10.1038/s41467-021-22943-1.

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AbstractGraphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (EF). At low EF (<130 meV), a positive photocurrent is generated,

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Criante, Luigino, and Marco Natali. "Simultaneous Tenfold Brightness Enhancement and Emitted-Light Spectral Tunability in Transparent Ambipolar Organic Light-Emitting Transistor by Integration of High-k Photonic Crystal." May 10, 2022. https://doi.org/10.5281/zenodo.6536111.

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In organic light-emitting transistors, the structural properties such as the in-plane geometry and the lateral charge injection are the key elements that enable the monolithic integration of multiple electronic, optoelectronic, and photonic functions within the same device. Here, the realization of highly integrated multifunctional optoelectronic organic device is reported by introducing a high-capacitance photonic crystal as a gate dielectric into a transparent single-layer ambipolar organic light-emitting transistor (OLET). By engineering the photonic crystal multistack and bandgap, it is sh

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40

Hirschman, K. D., L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet. "Integrating Bipolar Junction Transistors with Silicon-Based Light-Emitting Devices." MRS Proceedings 452 (1996). http://dx.doi.org/10.1557/proc-452-705.

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AbstractSilicon-based optoelectronic devices enable the realization of optoelectronic systems that are compatible with integrated circuit manufacturing technology. This work reports on silicon-based visible light-emitting devices (LEDs) that have been successfully integrated into a standard bipolar fabrication sequence. The basic LED structure consists of a 0.5–1.0μm thick silicon-rich silicon oxide (SRSO) active light-emitting layer formed on a p-type silicon wafer by partial oxidation of porous silicon (PSi), with an n+ doped polysilicon cathode. The LEDs exhibit bright electroluminescence (

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Xu, Chengyong, Min Li, Nianzi Sui, et al. "Ultralow‐Power Highly‐Selective Near‐Infrared (≈850 nm) Carbon Nanotube Flexible Optoelectronic Synaptic Transistors for Real‐Time Trajectory Tracking." Small, April 8, 2025. https://doi.org/10.1002/smll.202412324.

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AbstractOptoelectronic synaptic devices are promising candidate components for brain‐like efficient neuromorphic computing systems. The development of highly‐selective near‐infrared (NIR) optoelectronic synaptic devices is important for realizing more efficient optical computing, night monitoring, and robot visual perception. In this work, ultralow‐power (56 aJ per light pulse), NIR (≈850 nm) highly‐selective optoelectronic synaptic transistor devices based on carbon nanotube thin film transistors are developed by modification of the organic photosensitive material in the device channels. The

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Yang, Yang, Chuanyu Fu, Shuo Ke, Xiao Fang, Changjin Wan, and Qing Wan. "W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity." Chinese Physics B, June 16, 2023. http://dx.doi.org/10.1088/1674-1056/acdeda.

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Abstract Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In2O3 nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP) and depression (LTD). Moreove

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Zhang, Sen, Pingdan Xiao, Xitong Hong, et al. "All‐In‐One Hardware Devices with Event‐Based Vision Sensor Arrays for Image Sensing, Computing, and Learning." Advanced Functional Materials, August 30, 2023. http://dx.doi.org/10.1002/adfm.202306173.

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AbstractMetal oxide semiconductors (MOSs) are considered as potential candidates for the low‐cost, large‐area fabrication of flexible optoelectronic devices. However, the current optoelectronic devices based on MOSs are limited to unidirectional photoresponse, which constrains the performance of MOSs‐based vision sensors for artificial vision systems. Herein, for the first time, a flexible artificial vision system integrated with optical perception, computation, and learning functionalities is demonstrated using SnO optoelectronic synaptic transistor‐based event‐driven vision sensors to enable

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Cai, Chuanyang, Jie Peng, Shiyu Ling та Pengfei Hou. "Photoelectric and pyroelectric performance modulated by the in-plane ferroelectric polarization in multi-functional α-In2Se3-based transistor". Applied Physics Letters 122, № 18 (2023). http://dx.doi.org/10.1063/5.0147013.

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As a typical two-dimensional van der Waals ferroelectric material, α-In2Se3 has great potential in the applications of optoelectronic devices, memories, sensors, detectors, and synapses. Although it has been proved that α-In2Se3 is with simultaneous intercorrelated in-plane and out-of-plane ferroelectric polarization, the degree-of-freedom of in-plane ferroelectric polarization in the α-In2Se3 and its influence on the other properties have always been neglected because of the difficulties in the characterization and application, comparing with the out-of-plane ferroelectric polarization. Speci

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Li, Pengzhan, Mingzhen Zhang, Qingli Zhou, et al. "Reconfigurable optoelectronic transistors for multimodal recognition." Nature Communications 15, no. 1 (2024). http://dx.doi.org/10.1038/s41467-024-47580-2.

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AbstractBiological nervous system outperforms in both dynamic and static information perception due to their capability to integrate the sensing, memory and processing functions. Reconfigurable neuromorphic transistors, which can be used to emulate different types of biological analogues in a single device, are important for creating compact and efficient neuromorphic computing networks, but their design remains challenging due to the need for opposing physical mechanisms to achieve different functions. Here we report a neuromorphic electrolyte-gated transistor that can be reconfigured to perf

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Wang, Le, Haotian Wang, Jing Liu, et al. "Negative Photoconductivity Transistors for Visuomorphic Computing." Advanced Materials, July 23, 2024. http://dx.doi.org/10.1002/adma.202403538.

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AbstractVisuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating “excitation” and “inhibition” akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better se

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Khan, M. A., Q. Chen, C. J. Sun, J. W. Yang, and M. S. Shur. "Recent Progress in AlGaN/GaN Based Optoelectronic Devices." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-913.

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ABSTRACTWe review our recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectr

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Arienzo, Maurizio, James H. Comfort, Emmanuel F. Crabbe, et al. "SiGe Heterojunctions Transistors and Optoelectronic Devices." MRS Proceedings 281 (1992). http://dx.doi.org/10.1557/proc-281-401.

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ABSTRACTSiGe alloys have been successfully applied to a number of semiconductor devices, including bipolar heterojunction transistors, field effect transistors (FET's), and optoelectronic devices and structures. This review paper will first summarize the results obtained to-date in bipolar transistors, highlighting the design flexibility and the trade-offs offered by SiGe heterojunction technology and bandgap engineering, like junction field/capacitance control, liquid nitrogen operation and complementary processes. The leverage of this technology in high speed circuits will be discussed, incl

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Sun, Shangheng, Minghao Zhang, Jing Bian, Ting Xu, and Jie Su. "In2O3/ZnO Heterojunction Thin Film Transistor for High Recognition Accuracy Neuromorphic Computing and Optoelectronic Artificial Synapses." Nanotechnology, June 11, 2024. http://dx.doi.org/10.1088/1361-6528/ad5685.

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Abstract Solid electrolyte-gated transistors exhibit improved chemical stability and can fulfill the requirements of microelectronic packaging. Typically, metal oxide semiconductors are employed as channel materials. However, the extrinsic electron transport properties of these oxides, which are often prone to defects, pose limitations on the overall electrical performance. Achieving excellent repeatability and stability of transistors through the solution process remains a challenging task. In this study, we propose the utilization of a solution-based method to fabricate an In2O3/ZnO heteroju

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Yun, Yumin, Junhyeong Park, Minsik Kong, et al. "Optoelectronic Neuromorphic System Based on Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistor for Spiking Neural Networks." Advanced Intelligent Systems, July 21, 2025. https://doi.org/10.1002/aisy.202500402.

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Neuromorphic computing for spiking neural networks (SNNs) has attracted tremendous attention for next‐generation computing in various applications. Amorphous indium–gallium–zinc–oxide (IGZO) is a promising candidate for optoelectronic synaptic transistors and neuron circuits due to its photoconductivity, low‐temperature fabrication process, and extremely low leakage current. Herein, an IGZO‐based optoelectronic neuromorphic system integrated with light guides is reported. The IGZO‐based optoelectronic synaptic transistor demonstrates high retention through a negative gate bias by the IGZO‐base

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