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Journal articles on the topic 'OPTOELECTRONICS APPLICATIONS'

Author: Grafiati

Published: 11 September 2023

Last updated: 31 July 2025

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1

Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this

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2

Amariucai-Mantu, Dorina, Violeta Mangalagiu, and Ionel I. Mangalagiu. "[3 + n] Cycloaddition Reactions: A Milestone Approach for Elaborating Pyridazine of Potential Interest in Medicinal Chemistry and Optoelectronics." Molecules 26, no. 11 (2021): 3359. http://dx.doi.org/10.3390/molecules26113359.

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During the last few decades, pyridazine derivatives have emerged as privileged structures in heterocyclic chemistry, both because of their excellent chemistry and because of their potential applications in medicinal chemistry and optoelectronics. This review is focused on the recent advances in [3 + n] cycloaddition reactions in the pyridazine series as well as their medicinal chemistry and optoelectronic applications over the last ten years. The stereochemistry and regiochemistry of the cycloaddition reactions are discussed. Applications in optoelectronics (in particular, as fluorescent mater

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3

Wang, Yuyin, Shiguo Han, Xitao Liu, et al. "Exploring a lead-free organic–inorganic semiconducting hybrid with above-room-temperature dielectric phase transition." RSC Advances 10, no. 30 (2020): 17492–96. http://dx.doi.org/10.1039/c9ra09289g.

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4

Zhao, Mingyue, Yurui Hao, Chen Zhang, et al. "Advances in Two-Dimensional Materials for Optoelectronics Applications." Crystals 12, no. 8 (2022): 1087. http://dx.doi.org/10.3390/cryst12081087.

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The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Add

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5

Chen, K. T. "Applications '90: Soviet optoelectronics." IEEE Spectrum 27, no. 2 (1990): 44–45. http://dx.doi.org/10.1109/6.45079.

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6

Yu, Jia, Shiru Wu, Xun Zhao, et al. "Progress on Two-Dimensional Transitional Metal Dichalcogenides Alloy Materials: Growth, Characterisation, and Optoelectronic Applications." Nanomaterials 13, no. 21 (2023): 2843. http://dx.doi.org/10.3390/nano13212843.

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Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered remarkable attention in electronics, optoelectronics, and hydrogen precipitation catalysis due to their exceptional physicochemical properties. Their utilisation in optoelectronic devices is especially notable for overcoming graphene’s zero-band gap limitation. Moreover, TMDs offer advantages such as direct band gap transitions, high carrier mobility, and efficient switching ratios. Achieving precise adjustments to the electronic properties and band gap of 2D semiconductor materials is crucial for enhancing their capa

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7

Luo, Xianqi. "Applications of 2D semiconductor materials in electronics and optoelectronics." Highlights in Science, Engineering and Technology 87 (March 26, 2024): 148–54. http://dx.doi.org/10.54097/pj6few58.

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Due to the demand for the higher performance of electronic and optoelectronic devices, the research of 2D semiconductor materials is very important nowadays. Because of the excellent electronic and optoelectronic properties of 2D semiconductor materials can be applied in many fields. This article mainly introduced the preparation, properties and applications of 2D semiconductor materials. The applications in electronics and optoelectronics are mainly discussed, such logic gates, field effect transistors light emitting diodes and high responsivity photodetectors. Compared to traditional semicon

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8

Wu, Jing, Yunshan Zhao, Minglei Sun, et al. "Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering." Nanophotonics 9, no. 8 (2020): 2467–74. http://dx.doi.org/10.1515/nanoph-2019-0542.

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AbstractRecently, layered two-dimensional (2D) palladium diselenide (PdSe2), with a unique low- symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herei

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9

Godlewski, M., E. Wolska, S. Yatsunenko, et al. "Doped nanoparticles for optoelectronics applications." Low Temperature Physics 35, no. 1 (2009): 48–52. http://dx.doi.org/10.1063/1.3064908.

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10

Karamarković, J. "Essentials of optoelectronics with applications." Microelectronics Journal 29, no. 12 (1998): 1039. http://dx.doi.org/10.1016/s0026-2692(98)00010-x.

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11

Lu, Yangbin, Kang Qu, Tao Zhang, Qingquan He, and Jun Pan. "Metal Halide Perovskite Nanowires: Controllable Synthesis, Mechanism, and Application in Optoelectronic Devices." Nanomaterials 13, no. 3 (2023): 419. http://dx.doi.org/10.3390/nano13030419.

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Metal halide perovskites are promising energy materials because of their high absorption coefficients, long carrier lifetimes, strong photoluminescence, and low cost. Low-dimensional halide perovskites, especially one-dimensional (1D) halide perovskite nanowires (NWs), have become a hot research topic in optoelectronics owing to their excellent optoelectronic properties. Herein, we review the synthetic strategies and mechanisms of halide perovskite NWs in recent years, such as hot injection, vapor phase growth, selfassembly, and solvothermal synthesis. Furthermore, we summarize their applicati

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12

Li, Zimin, and Ye Tian. "Nano-Bismuth-Sulfide for Advanced Optoelectronics." Photonics 9, no. 11 (2022): 790. http://dx.doi.org/10.3390/photonics9110790.

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Bi2S3is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices. An increasing number of reports point to the potential of such nanostructures to support a number of optical applications, such as photodetectors, solar cells and photocatalysts. With the aim of providing a comprehensive basis for exploiting the full potential of Bi2S3 nanostructures on optoelectronics, we review the current progress in their controlled fabrication, the t

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13

Xu, Wangqiong, Ying Lu, Weibin Lei, et al. "FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector." Micromachines 13, no. 1 (2021): 11. http://dx.doi.org/10.3390/mi13010011.

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Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

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14

Kumar, Swarup, Usha Akter, and Sree Biddut Kumar. "Compound Materials in Optoelectronics: A Review of Their Prospects and Applications." European Journal of Theoretical and Applied Sciences 3, no. 2 (2025): 371–82. https://doi.org/10.59324/ejtas.2025.3(2).32.

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Recent advances in mechanics and material design have enabled the development of optoelectronic circuits, systems, and devices that are curved, flexible, stretchable, and biocompatible. This progress allows for the seamless integration of optoelectronic devices with biological systems, supporting applications ranging from high-speed communication to energy conversion. This in-depth review study critically explores the groundbreaking potential and cutting-edge applications of compound materials in revolutionizing optoelectronic devices. The research delves into a range of compound materials, su

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Swarup, Kumar, Akter Usha, and Biddut Kumar Sree. "Compound Materials in Optoelectronics: A Review of Their Prospects and Applications." European Journal of Theoretical and Applied Sciences 3, no. 2 (2025): 371–82. https://doi.org/10.59324/ejtas.2025.3(2).32.

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Recent advances in mechanics and material design have enabled the development of optoelectronic circuits, systems, and devices that are curved, flexible, stretchable, and biocompatible. This progress allows for the seamless integration of optoelectronic devices with biological systems, supporting applications ranging from high-speed communication to energy conversion. This in-depth review study critically explores the groundbreaking potential and cutting-edge applications of compound materials in revolutionizing optoelectronic devices. The research delves into a range of compound materials, su

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16

Soref, Richard. "The Achievements and Challenges of Silicon Photonics." Advances in Optical Technologies 2008 (July 2, 2008): 1–7. http://dx.doi.org/10.1155/2008/472305.

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A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.

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17

Yang, Fangxu, Shanshan Cheng, Xiaotao Zhang, et al. "Organic Optoelectronics: 2D Organic Materials for Optoelectronic Applications (Adv. Mater. 2/2018)." Advanced Materials 30, no. 2 (2018): 1870012. http://dx.doi.org/10.1002/adma.201870012.

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18

Ma, Xuheng. "Applications of Two-Dimensional Organic Materials in the Field of Optoelectronics." Highlights in Science, Engineering and Technology 87 (March 26, 2024): 167–72. http://dx.doi.org/10.54097/keeydh86.

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This article looks into the quickly advancing landscape of two-dimensional organic products and their transformative function in optoelectronics, driven by developments in nanotechnology and chemistry. At the leading edge of this exploration are three essential materials: Graphene and its analogs, conjugated polymer nanosheets, and fullerene derivatives. Each of these materials presents unique characteristics and difficulties, offering a complex view of the potential and difficulties in this innovative domain name. Graphene and its analogs, renowned for their outstanding electric conductivity

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19

Abiodun, Isaac Chukwutem, Monday Edward Edem, and Obasesam Ebri Agbor. "Investigation of the Structural and electronic properties of Ternary AB₂X₄ based material via Density Functional Theory (DFT) for Optoelectronic Applications." Communication in Physical Sciences 12, no. 1 (2025): 1–11. https://doi.org/10.4314/cps.v12i1.1.

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Developing inexpensive, non-toxic, high-efficiency, earth-abundant optoelectronics material is critical for implementing electronic devices. CdAl2S4 is a promising earth- abundant absorber AB₂X₄ material that has attracted attention recently for optoelectronic applications including solar cells and light-emitting diodes. However, very little is known about the relationship between structural and electronic properties such as the band gap, density of state, and partial density of state. This information is, however, very essential for the design and fabrication of CdAl2S4 optoelectronics device

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20

Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other p

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21

Stepanidenko, Evgeniia A., Elena V. Ushakova, Anatoly V. Fedorov, and Andrey L. Rogach. "Applications of Carbon Dots in Optoelectronics." Nanomaterials 11, no. 2 (2021): 364. http://dx.doi.org/10.3390/nano11020364.

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Carbon dots (CDs) are an attractive class of nanomaterials due to the ease of their synthesis, biocompatibility, and superior optical properties. The electronic structure of CDs and hence their optical transitions can be controlled and tuned over a wide spectral range via the choice of precursors, adjustment of the synthetic conditions, and post-synthetic treatment. We summarize recent progress in the synthesis of CDs emitting in different colors in terms of morphology and optical properties of the resulting nanoparticles, with a focus on the synthetic approaches allowing to shift their emissi

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22

Butt, Faheem K. "Nanomaterials for Optoelectronics Energy Storage Applications." Current Nanomaterials 3, no. 1 (2018): 4. http://dx.doi.org/10.2174/240546150301180720110702.

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23

Godlewski, Marek. "(Invited) Doped Nanoparticles for Optoelectronics Applications." ECS Transactions 28, no. 3 (2019): 223–28. http://dx.doi.org/10.1149/1.3367229.

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24

Wang, Tairan, N. Moll, Kyeongjae Cho, and J. D. Joannopoulos. "Deliberately Designed Materials for Optoelectronics Applications." Physical Review Letters 82, no. 16 (1999): 3304–7. http://dx.doi.org/10.1103/physrevlett.82.3304.

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25

Knox, W. H. "Quantum wells for femtosecond optoelectronics applications." Applied Physics A Solids and Surfaces 53, no. 6 (1991): 503–13. http://dx.doi.org/10.1007/bf00331539.

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26

Egorov, V. A., G. É. Cirlin, A. A. Tonkikh, et al. "Si/Ge nanostructures for optoelectronics applications." Physics of the Solid State 46, no. 1 (2004): 49–55. http://dx.doi.org/10.1134/1.1641919.

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27

Popescu, Roxana, Cristian Pîrvu, Mirela Moldoveanu, James G. Grote, Francois Kajzar, and Ileana Rau. "Biopolymer Thin Films for Optoelectronics Applications." Molecular Crystals and Liquid Crystals 522, no. 1 (2010): 229/[529]—237/[537]. http://dx.doi.org/10.1080/15421401003722757.

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28

Sureshkumar, M. S., R. K. Goyal, and Y. S. Negi. "Potential Applications of Polystyrene in Optoelectronics." Progress in Rubber, Plastics and Recycling Technology 24, no. 1 (2008): 53–71. http://dx.doi.org/10.1177/147776060802400105.

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29

Lin, Runze, Xinyi Shan, Daqi Shen, Xugao Cui, and Pengfei Tian. "84‐1: Invited Paper: Flexible Transparent Micro‐LED Array for Applications in Display and Visible Light Communication." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 2250–52. http://dx.doi.org/10.1002/sdtp.17747.

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In this work, based on transfer printing technology, planar integration of RGB InGaN‐based micro‐LEDs on flexible transparent material was realized. By measuring the optoelectronic parameters, we demonstrated the feasibility of this integrated device in full‐color display applications. In addition, based on the on‐off keying modulation and wavelength division multiplexing, visible light communication in parallel channels can be achieved. Relevant studies have demonstrated the broad prospects of InGaN‐based micro‐LED devices in multifunctional flexible integrated optoelectronics applications.

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30

Lim, Ju Won. "Polymer Materials for Optoelectronics and Energy Applications." Materials 17, no. 15 (2024): 3698. http://dx.doi.org/10.3390/ma17153698.

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This review comprehensively addresses the developments and applications of polymer materials in optoelectronics. Especially, this review introduces how the materials absorb, emit, and transfer charges, including the exciton–vibrational coupling, nonradiative and radiative processes, Förster Resonance Energy Transfer (FRET), and energy dynamics. Furthermore, it outlines charge trapping and recombination in the materials and draws the corresponding practical implications. The following section focuses on the practical application of organic materials in optoelectronics devices and highlights the

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31

Ha, Heebo, Nadeem Qaiser, and Byungil Hwang. "Introductory Overview of Layer Formation Techniques of Ag Nanowires on Flexible Polymeric Substrates." Inorganics 12, no. 3 (2024): 65. http://dx.doi.org/10.3390/inorganics12030065.

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Ag nanowire electrodes are promising substitutes for traditional indium tin oxide (ITO) electrodes in optoelectronic applications owing to their impressive conductivity, flexibility, and transparency. This review provides an overview of recent trends in Ag nanowire electrode layer formation, including key developments, challenges, and future prospects. It addresses several challenges in integrating Ag nanowires into practical applications, such as scalability, cost-effectiveness, substrate compatibility, and environmental considerations. Additionally, drawing from current trends and emerging t

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32

Miao, Sijia, Tianle Liu, Yujian Du, et al. "2D Material and Perovskite Heterostructure for Optoelectronic Applications." Nanomaterials 12, no. 12 (2022): 2100. http://dx.doi.org/10.3390/nano12122100.

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Optoelectronic devices are key building blocks for sustainable energy, imaging applications, and optical communications in modern society. Two-dimensional materials and perovskites have been considered promising candidates in this research area due to their fascinating material properties. Despite the significant progress achieved in the past decades, challenges still remain to further improve the performance of devices based on 2D materials or perovskites and to solve stability issues for their reliability. Recently, a novel concept of 2D material/perovskite heterostructure has demonstrated r

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33

Matei, Andrei Teodor, Anita Ioana Visan, and Irina Negut. "Laser-Fabricated Micro/Nanostructures: Mechanisms, Fabrication Techniques, and Applications." Micromachines 16, no. 5 (2025): 573. https://doi.org/10.3390/mi16050573.

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The rapid evolution of optoelectronic devices necessitates innovative fabrication techniques to improve their performance and functionality. This review explores the advancements in laser processing as a versatile method for creating micro- and nanostructured surfaces, tailored to enhance the efficiency of optoelectronic applications. We begin by elucidating the fundamental mechanisms underlying laser interactions with materials, which facilitate the precise engineering of surface topographies. Following this, we systematically review various micro/nanostructures fabricated by laser techniques

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34

Pisula, Wojciech. "Inorganic Semiconductors in Electronic Applications." Electronic Materials 4, no. 3 (2023): 136–38. http://dx.doi.org/10.3390/electronicmat4030011.

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35

Hernández, David Asael Gutiérrez, and Juan Arturo Aranda Ruiz. "Novel Optoelectronics Device for Measuring Pupillary Dynamics for Medical Applications." International Journal of Scientific Research 2, no. 4 (2012): 85–87. http://dx.doi.org/10.15373/22778179/apr2013/33.

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36

Tang, Hongyu, and Giulia Tagliabue. "Tunable photoconductive devices based on graphene/WSe₂ heterostructures." EPJ Web of Conferences 266 (2022): 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

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Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was ob

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37

Nowsherwan, Ghazi Aman, Qasim Ali, Umar Farooq Ali, Muhammad Ahmad, Mohsin Khan, and Syed Sajjad Hussain. "Advances in Organic Materials for Next-Generation Optoelectronics: Potential and Challenges." Organics 5, no. 4 (2024): 520–60. http://dx.doi.org/10.3390/org5040028.

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This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-a

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38

Schöler, Michael, Maximilian W. Lederer, and Peter J. Wellmann. "Deep Electronic Levels in n-Type and p-Type 3C-SiC." Materials Science Forum 963 (July 2019): 297–300. http://dx.doi.org/10.4028/www.scientific.net/msf.963.297.

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In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applicatio

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Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, and Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics." Applied Physics Reviews 10, no. 1 (2023): 011310. http://dx.doi.org/10.1063/5.0090120.

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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetector

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Wang, Xiaoqian, Wanli Liu, Jiazhen He, Yuqing Li, and Yong Liu. "Synthesis of All-Inorganic Halide Perovskite Nanocrystals for Potential Photoelectric Catalysis Applications." Catalysts 13, no. 7 (2023): 1041. http://dx.doi.org/10.3390/catal13071041.

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Compared with conventional semiconductors, halide perovskite nanocrystals (NCs) have a unique crystal structure and outstanding optoelectronic properties, offering wide potential for applications in optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, lasers, and displays. Rational technological design is providing vital support for the development of perovskite optoelectronics. Herein, monodisperse all-inorganic halide perovskite nanocrystals with consistent morphology and cubic crystal phase were synthesized employing a modified one-pot hot injection method to i

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Shi, Yuyang, Haipeng Song, Nan Li, et al. "High-pressure structural stability and bandgap engineering of layered tin disulfide." Applied Physics Letters 121, no. 11 (2022): 114101. http://dx.doi.org/10.1063/5.0107303.

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Two-dimensional layered metal dichalcogenides have attracted extensive attention because of their diverse physical properties and potential applications in electronics and optoelectronics. As an eco-friendly and earth abundant semiconductor, SnS2 displays limited optoelectronic applications due to its large and indirect bandgap. Pressure is a powerful tool to tune crystal structures and physical properties of materials. Here, we systematically investigate the structural stability and optical properties of 4H-SnS2 under high pressure. The crystal structure of 4H-SnS2 is stable up to 56 GPa with

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42

Coffa, Salvatore, and Leonid Tsybeskov. "Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 16–19. http://dx.doi.org/10.1557/s0883769400030219.

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The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the deve

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43

Soopy, Abdul Kareem K., Bhaskar Parida, and Adel Najar. "Fast and Facile Synthesis of Passivated Perovskite Single Crystals with Zn-Porphyrin Derivatives." Journal of Physics: Conference Series 2751, no. 1 (2024): 012020. http://dx.doi.org/10.1088/1742-6596/2751/1/012020.

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Abstract Organic-inorganic trihalide, ABX3 perovskite are excellent candidates for advanced optoelectronic applications beyond photovoltaics. Perovskite single crystals offer several advantageous special features, such as a long diffusion length, low trapped carrier density, and outstanding environmental stability to use in optoelectronics. In this work, Zn has been incorporated into MAPbBr3 single crystals as Zn- Porphyrin to passivate the bulk crystals and enhance their optical and electrical properties. The inverse temperature crystallization phenomenon was used to crystallize MAPbBr3 rapid

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44

Tomlinson, W. J., and C. A. Brackett. "Telecommunications applications of integrated optics and optoelectronics." Proceedings of the IEEE 75, no. 11 (1987): 1512–23. http://dx.doi.org/10.1109/proc.1987.13912.

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45

Luo, Yi, Dennis G. Deppe, and Chennupati Jagadish. "Guest Editorial on Nano-Optoelectronics and Applications." Journal of Lightwave Technology 26, no. 11 (2008): 1365–66. http://dx.doi.org/10.1109/jlt.2008.923651.

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46

Iovine, Renato, Luigi La Spada, and Lucio Vegni. "Nanoparticle device for biomedical and optoelectronics applications." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 32, no. 5 (2013): 1596–608. http://dx.doi.org/10.1108/compel-03-2013-0105.

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Charas, Ana, Helena Alves, José M. G. Martinho, et al. "Photoacid cross-linkable polyfluorenes for optoelectronics applications." Synthetic Metals 158, no. 16 (2008): 643–53. http://dx.doi.org/10.1016/j.synthmet.2008.02.016.

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Upadhyaya, Kishor, Narasimha Ayachit, and S. M. Shivaprasad. "Ag/GaN hybrid nanostructures for optoelectronics applications." Journal of Physics: Conference Series 1495 (March 2020): 012029. http://dx.doi.org/10.1088/1742-6596/1495/1/012029.

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Wei, Di, and Gehan Amaratunga. "Photoelectrochemical Cell and Its Applications in Optoelectronics." International Journal of Electrochemical Science 2, no. 12 (2007): 897–912. http://dx.doi.org/10.1016/s1452-3981(23)17121-5.

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Smertenko, P., D. Pekur, V. Sorokin, and Z. Maksimenko. "Optoelectronics and the SPQEO journal." Semiconductor Physics, Quantum Electronics and Optoelectronics 27, no. 03 (2024): 256–60. http://dx.doi.org/10.15407/spqeo27.03.256.

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Abstract:

This article touches on the main trends in the development of optoelectronics, its fundamentals and possible applications, and gives a general overview of the research results in this field published by SPQEO over the past decade. We will emphasize the relationship between the development of optoelectronics and the sixth technological wave related to nano-, bio-, information and cognitive technologies. For convenience, we will conditionally divide the discussion into the optoelectronics fields of photonics, terahertz and infrared electronics, and photovoltaics, etc. This paper is devoted to on

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