Academic literature on the topic 'Optoelectronics - NCs'

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Journal articles on the topic "Optoelectronics - NCs"

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Wang, Xiaoqian, Wanli Liu, Jiazhen He, Yuqing Li, and Yong Liu. "Synthesis of All-Inorganic Halide Perovskite Nanocrystals for Potential Photoelectric Catalysis Applications." Catalysts 13, no. 7 (2023): 1041. http://dx.doi.org/10.3390/catal13071041.

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Compared with conventional semiconductors, halide perovskite nanocrystals (NCs) have a unique crystal structure and outstanding optoelectronic properties, offering wide potential for applications in optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, lasers, and displays. Rational technological design is providing vital support for the development of perovskite optoelectronics. Herein, monodisperse all-inorganic halide perovskite nanocrystals with consistent morphology and cubic crystal phase were synthesized employing a modified one-pot hot injection method to i
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Yang, Liuli, Ting Wang, Qiuhong Min, et al. "Ultrahigh photo-stable all-inorganic perovskite nanocrystals and their robust random lasing." Nanoscale Advances 2, no. 2 (2020): 888–95. http://dx.doi.org/10.1039/c9na00775j.

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Pinto, S. R. C., P. Caldelas, A. G. Rolo, A. Chahboun, and M. J. M. Gomes. "Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques." Microscopy and Microanalysis 14, S3 (2008): 61–64. http://dx.doi.org/10.1017/s1431927608089393.

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Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies ha
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Ghoshal, Sib Krishna, M. R. Sahar, R. Arifin, M. S. Rohani, and K. Hamzah. "Surface States and Band Gap Correlation in Silicon Nanoclusters." Advanced Materials Research 1107 (June 2015): 308–13. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.308.

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Tuning the visible emission of Si nanomaterials by modifying their size and shape is one of the key issue in optoelectronics. The observed optical gain in Si-nanoclusters (NCs) has given further impulse to nanosilicon research. We develop a phenomenological model by combining the effects of surface passivation, exciton states and quantum confinement (QC). The size and passivation dependent band gap, oscillator strength, radiative lifetime and photoluminescence (PL) intensity for NCs with diameter ranging from 1.0 to 6.0 nm are presented. By controlling a set of fitting parameters, it is possib
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Patnaik, Sumanta Kumar, Sukanta Kumar Triapthy, and Surendra Nath Sahu. "Synthesis and characterization of small size fluorescent LEEH caped blue emission ZnTe quantum dots." Materials Science-Poland 35, no. 1 (2017): 1–5. http://dx.doi.org/10.1515/msp-2017-0012.

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AbstractWe report here for the first time the synthesis of LEEH caped very small size (2 nm) ZnTe quantum dots at low temperature (less than 100 °C) using a simple chemical route. The effects of aging and stirring time on the absorption spectra of the quantum dots were investigated. The synthesized nanocrystal (NC) was characterized by PL, TEM, XRD and the formation of very small size quantum dots having FCC structure was confirmed. Further, blue emission from the prepared sample was observed during exposure to monochromatic UV radiation. ZnTe NCs obtained in this study were found to be more s
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Liu, Albert, Diogo B. Almeida, Luiz G. Bonato, et al. "Multidimensional coherent spectroscopy reveals triplet state coherences in cesium lead-halide perovskite nanocrystals." Science Advances 7, no. 1 (2021): eabb3594. http://dx.doi.org/10.1126/sciadv.abb3594.

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Advances in optoelectronics require materials with novel and engineered characteristics. A class of materials that has garnered tremendous interest is metal-halide perovskites, stimulated by meteoric increases in photovoltaic efficiencies of perovskite solar cells. In addition, recent advances have applied perovskite nanocrystals (NCs) in light-emitting devices. It was found recently that, for cesium lead-halide perovskite NCs, their unusually efficient light emission may be due to a unique excitonic fine structure composed of three bright triplet states that minimally interact with a proximal
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Wang, Yen Po, Hsin Chieh Li, Yan Chi Huang, and Chih Shan Tan. "Synthesis and Applications of Halide Perovskite Nanocrystals in Optoelectronics." Inorganics 11, no. 1 (2023): 39. http://dx.doi.org/10.3390/inorganics11010039.

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The perovskites used for optoelectronic devices have been more attractive during recent years due to their wide variety of advantages, such as their low cost, high photoluminescence quantum yield (PLQY), high carrier mobility, flexible bandgap tunability, and high light absorption ability. However, optoelectronic applications for traditional inorganic and organic materials present dilemmas due to their hardly tunable bandgap and instability. On the other hand, there are some more important benefits for perovskite nanocrystals, such as a size-dependent bandgap and the availability of anion exch
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Arumugam, Gowri Manohari, Santhosh Kumar Karunakaran, Raquel E. Galian, and Julia Pérez-Prieto. "Recent Progress in Lanthanide-Doped Inorganic Perovskite Nanocrystals and Nanoheterostructures: A Future Vision of Bioimaging." Nanomaterials 12, no. 13 (2022): 2130. http://dx.doi.org/10.3390/nano12132130.

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All-inorganic lead halide perovskite nanocrystals have great potential in optoelectronics and photovoltaics. However, their biological applications have not been explored much owing to their poor stability and shallow penetration depth of ultraviolet (UV) excitation light into tissues. Interestingly, the combination of all-inorganic halide perovskite nanocrystals (IHP NCs) with nanoparticles consisting of lanthanide-doped matrix (Ln NPs, such as NaYF4:Yb,Er NPs) is stable, near-infrared (NIR) excitable and emission tuneable (up-shifting emission), all of them desirable properties for biologica
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Shamim, Aisha, Hasan Abdulnaser Charam, Gul E. Nayyab, and Monis Bin Abid. "ndSynthesis, Properties a Applications of Lead Halide Perovskite Nanocrystals." Pakistan Journal of Analytical & Environmental Chemistry 25, no. 2 (2024): 150–82. https://doi.org/10.21743/pjaec/2024.12.01.

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Owing to superb optical versatility, soaring photoluminescence quantum yields, and simple fabrication, perovskite nanocrystals have captivated the interest of researchers across the globe. They are one of the most promising materials of the 20th century due to their extensive applications in optoelectronic devices, such as solar cells, flat panel displays, solid-state lighting, detectors, photovoltaics, and sensor fields. The critical attribute of lead halide perovskite nanocrystals (LHPNCs) is the innocuous nature of their structural defects, although highly abundant in these compounds relati
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Ismail, Asmaa M., Abeer A. Reffaee, and Fawzy G. El Desouky. "Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO2 nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances." Journal of Semiconductors 45, no. 7 (2024): 072101. http://dx.doi.org/10.1088/1674-4926/24020026.

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Abstract Nanocomposite films consisting of carboxymethyl cellulose, polyethylene oxide (CMC/PEO), and anatase titanium dioxide (TO) were produced by the use of sol-gel and solution casting techniques. TiO2 nanocrystals were effectively incorporated into CMC/PEO polymers, as shown by X-ray diffraction (XRD) and attenuated total reflectance fourier transform infrared (ATR-FTIR) analysis. The roughness growth is at high levels of TO nanocrystals (TO NCs), which means increasing active sites and defects in CMC/PEO. In differential scanning calorimetry (DSC) thermograms, the change in glass transit
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Dissertations / Theses on the topic "Optoelectronics - NCs"

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Thupakula, Umamahesh. "Tunneling and Electronic Properties of Shape Controlled Mono and Heterogeneous Semiconductor Nanocrystals." Thesis, 2019. http://hdl.handle.net/10821/8266.

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Single NC electrical measurements of semiconductor NCs provide the fundamental limits for miniaturizing the semiconductor device thereby offering the ultimate control over the real time advanced device applications. In this context, STM and STS provide several advantages over conventional measurement techniques by performing the imaging and I-V spectroscopy down to atomic resolution limit. The corresponding tunneling characteristics are directly proportional to the density of states of the sample under characterization. Thus, by using STM and STS one can essentially probe the density of states
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Book chapters on the topic "Optoelectronics - NCs"

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Wang, Yue, Deren Yang, and Xiaodong Pi. "Silicon-based Heterostructures for Optoelectronic Synaptic Devices." In Advanced Memory Technology. Royal Society of Chemistry, 2023. http://dx.doi.org/10.1039/bk9781839169946-00599.

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Silicon (Si) is one of the most important materials for very large-scale integration (VLSI) circuits, which has achieved great success in microelectronics. The advanced mature technology and the low cost of Si have attracted interest for exploring its use in optoelectronic synaptic devices. Si-based heterostructures with rationally designed energy-band alignments pave the way to optoelectronic synaptic devices with a series of advantages such as higher optical sensitivity and lower energy consumption. In this work, we introduce the use of Si-based heterostructures to develop optoelectronic syn
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Conference papers on the topic "Optoelectronics - NCs"

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Sharma, Ankit, Samit K. Ray, and K. V. Adarsh. "Breaking of Phonon Bottleneck In CsPbI3 Nanocrystals Due To Efficient Auger Recombination." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2024. https://doi.org/10.1364/jsapo.2024.17a_a31_5.

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Inorganics lead halide perovskite (LHP) have been became appropriate system for demonstrating light-matter interaction due to their flexible bandgap tunability, defect tolerance and high photoluminescence quantum yield nature. Although, LHPs have many hallmark properties which can support highly efficient photovoltaic devices, but they lost lot of energy in carriers-phonon scattering which slow down the recombination process and decrease the efficiency. Faster thermalization time of hot carriers support electron-hole recombination at band-edge which can be exploited in optoelectronic devices e
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Klimov, Victor I., and Duncan W. McBranch. "Ultrafast Optical Nonlinearities and Carrier Dynamics in Direct- and Indirect-Gap Semiconductor Nanocrystals." In Chemistry and Physics of Small-Scale Structures. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.ctua.3.

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Semiconductor nanocrystals (NCs) exhibit large and fast optical nonlinearities, and efficient photo- and electroluminescence that make them promising materials for applications in optoelectronics and ultrafast optical switching. The nonlinear optical and luminescent properties of NCs are significantly affected by carrier dynamics. Carrier trapping and a nonradiative Auger process are believed to play a major role in the early stages of carrier relaxation, resulting in ultrafast picosecond and subpicosecond dynamics measured in femtosecond pump-probe, photoluminescence (PL) up-conversion, and p
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Henshaw, Thomas L., Timothy J. Madden, John M. Herbelin та ін. "Measurement of gain on the 1.315-μm transition of atomic iodine as produced from the NCl(a1Δ) + I(2P 3/2 ) energy transfer reaction". У Optoelectronics '99 - Integrated Optoelectronic Devices, редактор Ernest A. Dorko. SPIE, 1999. http://dx.doi.org/10.1117/12.350650.

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Thränhardt, A., C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, and J. V. Moloney. "Modeling of (GaIn)(NAs) and related laser media." In Integrated Optoelectronic Devices 2006, edited by Marek Osinski, Fritz Henneberger, and Yasuhiko Arakawa. SPIE, 2006. http://dx.doi.org/10.1117/12.644019.

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Jian Huang, Ke Tang, Haitao Xu, et al. "Design for open-experimental course of optoelectronic materials and devices." In 2012 First National Conference for Engineering Sciences (FNCES). IEEE, 2012. http://dx.doi.org/10.1109/nces.2012.6543845.

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Ivaneeva, A. D., S. A. Vorobyov, and M. N. Likhatsky. "FORMATION AND EVOLUTION OF COPPER SULFIDE NANOPARTICLES IN AQUEOUS SOLUTIONS." In XVI INTERNATIONAL CONFERENCE "METALLURGY OF NON-FERROUS, RARE AND NOBLE METALS" named after corresponding member of the RAS Gennady Leonidovich PASHKOVA. Krasnoyarsk Science and Technology City Hall, 2023. http://dx.doi.org/10.47813/sfu.mnfrpm.2023.461-464.

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Copper sulfide nanoparticles (NPs) attract increasing attention due to unique electronic, optical and chemical properties promising for optoelectronic devices, solar cells, lithium ion batteries, nanoscale switches, sensors, photocatalysis, biomedicine and other applications. Although, the optical properties of copper chalcogenide nanocrystals (NCs) have been reported for a long time [1–13], only a few studies have described plasmon absorption in the near-IR region. The localized surface plasmon resonance (LSPS) phenomenon in cooper sulfide nanocrystals is actively studied only since 2009. Cu2
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Sen, Qian, Ma Lishuang, and Zhu Yao. "Study on spectral response and temperature effect of optoelectronic devices." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). IEEE, 2018. http://dx.doi.org/10.1109/nssmic.2018.8824420.

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Tang, Hui, Zemin Yu, Huanyan Xu, Fengchun Wang, and Dawei Meng. "Reform of Teaching Methods and Approaches of Optoelectronic Information Material Professional Courses Based on CDIO Mode." In 2012 First National Conference for Engineering Sciences (FNCES). IEEE, 2012. http://dx.doi.org/10.1109/nces.2012.6543626.

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Li, Wei, Markus Pessa, Tommy Ahlgren, and James Dekker. "Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy." In Symposium on Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467665.

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Zhong Pan, Lianhe Li, Yaowang Lin, Zengqi Zhou, and Ronghan Wu. "Growth and characterization of Ga(In)NAs on GaAs substrates." In Proceedings of APCC/OECC'99 - 5th Asia Pacific Conference on Communications/4th Optoelectronics and Communications Conference. IEEE, 1999. http://dx.doi.org/10.1109/apcc.1999.820549.

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