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1

Polena, John, Daniel Afzal, Jenner H. L. Ngai, and Yuning Li. "Temperature Sensors Based on Organic Field-Effect Transistors." Chemosensors 10, no. 1 (2021): 12. http://dx.doi.org/10.3390/chemosensors10010012.

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The rapid growth of wearable electronics, Internet of Things, smart packaging, and advanced healthcare technologies demand a large number of flexible, thin, lightweight, and ultralow-cost sensors. The accurate and precise determination of temperature in a narrow range (~0–50 °C) around ambient temperatures and near-body temperatures is critical for most of these applications. Temperature sensors based on organic field-effect transistors (OFETs) have the advantages of low manufacturing cost, excellent mechanical flexibility, easy integration with other devices, low cross-sensitivity, and multi-
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2

Gao, Xike, Wenfeng Qiu, Yunqi Liu, Gui Yu, and Daoben Zhu. "Organic field-effect transistors based on tetrathiafulvalene derivatives." Pure and Applied Chemistry 80, no. 11 (2008): 2405–23. http://dx.doi.org/10.1351/pac200880112405.

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In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives
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3

Zhu, Zhiheng, Yunlong Guo, and Yunqi Liu. "Application of organic field-effect transistors in memory." Materials Chemistry Frontiers 4, no. 10 (2020): 2845–62. http://dx.doi.org/10.1039/d0qm00330a.

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Functional organic field-effect transistors (OFETs) have developed rapidly, especially OFETs with memory function. We make a comprehensive summary of the background, memory mechanism, structure construction and memory applications based on OFETs.
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4

Trukhanov, Vasiliy A., Andrey Y. Sosorev, Dmitry I. Dominskiy, et al. "Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity." Molecules 29, no. 11 (2024): 2533. http://dx.doi.org/10.3390/molecules29112533.

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Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowe
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5

Torres-Moya, Iván. "The New Era of Organic Field-Effect Transistors: Hybrid OECTs, OLEFETs and OFEWs." Applied Sciences 14, no. 18 (2024): 8454. http://dx.doi.org/10.3390/app14188454.

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Advancements in electronic device technology have led to an exponential growth in demand for more efficient and versatile transistors. In this context, organic field-effect transistors (OFETs) have emerged as a promising alternative due to their unique properties and potential for flexible and low-cost applications. However, to overcome some of the inherent limitations of OFETs, the integration of organic materials with other materials and technologies has been proposed, giving rise to a new generation of hybrid devices. In this article, we explore the development and advances of organic field
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6

Shi, Yuhao, Yingkai Zheng, Jialiang Wang, et al. "Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid." Research 2020 (August 30, 2020): 1–10. http://dx.doi.org/10.34133/2020/6587102.

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Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. Owing to the intrinsic flexibility and natural compatibility with other organic components, organic polymers, such as poly(vinyl alcohol) (PVA), have emerged as highly interesting dielectric materials for OFETs. However, unsatisfactory issues, such as hysteresis, high subthreshold swing, and low effective carrier mobility, still considerably limit the practical applications of the polymer-dielectric OFETs fo
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7

Fang, Po-Hsiang, Peng-Lin Kuo, Yu-Wu Wang, Horng-Long Cheng, and Wei-Yang Chou. "Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric." Polymers 15, no. 11 (2023): 2421. http://dx.doi.org/10.3390/polym15112421.

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In this study, a high-K material, aluminum oxide (AlOx), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs. Thus,
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8

Chen, Min, Boyu Peng, and Hanying Li. "Single-crystal dielectrics for organic field-effect transistors." Journal of Materials Chemistry C 10, no. 13 (2022): 4985–98. http://dx.doi.org/10.1039/d2tc00100d.

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9

Mohammed, Bushra H., and Estabraq Talib Abdullah. "Performance Study of Pentacene based Organic Field Effect Transistor by Using monolayer, bilayer and trilayer and Gate Insulators." Iraqi Journal of Physics (IJP) 18, no. 44 (2020): 85–97. http://dx.doi.org/10.30723/ijp.v18i44.512.

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In this paper, Pentacene based-organic field effect transistors (OFETs) by using monolayer , bilayer and three layers of three different gate insulators (ZrO2, PVA and CYEPL) , two layers of different gate insulators (ZrO2/PVA and ZrO2/CYEPL ) and three layers of different gate insulators (ZrO2/PVA/CYEPL) were studied its electrical performance (output (Id-Vd)and transfer(Id-Vg) characteristics)by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investig
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10

Lee, Seunghyuk, Heesung Han, and Chang-Hyun Kim. "Nanodielectrics approaches to low-voltage organic transistors and circuits." European Physical Journal Applied Physics 91, no. 2 (2020): 20201. http://dx.doi.org/10.1051/epjap/2020200120.

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In this review, advances in nanoscale dielectric materials for organic field-effect transistors (OFETs) are summarized. OFETs are highly promising device units for ultra-thin, light-weight, flexible, and wearable electronics systems, while the operating voltages of the reported devices are in many cases much higher than what is relevant to modern technological applications. Key aspects behind this issue are clarified in terms of basic transistor device physics, which translate into the important motivations for realizing nanodielectric-based low-voltage OFETs. Different possibilities of a devi
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11

Yuvaraja, Saravanan, Ali Nawaz, Qian Liu, et al. "Organic field-effect transistor-based flexible sensors." Chemical Society Reviews 49, no. 11 (2020): 3423–60. http://dx.doi.org/10.1039/c9cs00811j.

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Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.
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12

Sánchez-Vergara, María Elena, Leon Hamui, and Sergio González Habib. "New Approaches in Flexible Organic Field-Effect Transistors (FETs) Using InClPc." Materials 12, no. 10 (2019): 1712. http://dx.doi.org/10.3390/ma12101712.

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Organic semiconductor materials have been the center of attention because they are scalable, low-cost for device fabrication, and they have good optical properties and mechanical flexibility, which encourages their research. Organic field-effect transistors (OFETs) have potential applications, specifically in flexible and low-cost electronics such as portable and wearable technologies. In this work we report the fabrication of an InClPc base flexible bottom-gate/top-contact OFET sandwich, configured by the high-evaporation vacuum technique. The gate substrate consisted of a bilayer poly(ethyle
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13

Sizov, Alexey, Askold Trul, Victoria Chekusova, et al. "H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors." Proceedings 2, no. 13 (2018): 935. http://dx.doi.org/10.3390/proceedings2130935.

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In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigati
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14

Tang, Wei, Yukun Huang, Lei Han, et al. "Recent progress in printable organic field effect transistors." Journal of Materials Chemistry C 7, no. 4 (2019): 790–808. http://dx.doi.org/10.1039/c8tc05485a.

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15

Zhang, Mingxin, Mengfan Zhou, Jing Sun, et al. "Recent Progress in Intrinsically Stretchable Sensors Based on Organic Field-Effect Transistors." Sensors 25, no. 3 (2025): 925. https://doi.org/10.3390/s25030925.

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Organic field-effect transistors (OFETs) are an ideal platform for intrinsically stretchable sensors due to their diverse mechanisms and unique electrical signal amplification characteristics. The remarkable advantages of intrinsically stretchable sensors lie in their molecular tunability, lightweight design, mechanical robustness, solution processability, and low Young’s modulus, which enable them to seamlessly conform to three-dimensional curved surfaces while maintaining electrical performance under significant deformations. Intrinsically stretchable sensors have been widely applied in smar
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16

Li, Le, Siying Wang, Yin Xiao, and Yong Wang. "Recent Advances in Immobilization Strategies for Biomolecules in Sensors Using Organic Field-Effect Transistors." Transactions of Tianjin University 26, no. 6 (2020): 424–40. http://dx.doi.org/10.1007/s12209-020-00234-y.

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Abstract Organic field-effect transistors (OFETs) are fabricated using organic semiconductors (OSCs) as the active layer in the form of thin films. Due to its advantages of high sensitivity, low cost, compact integration, flexibility, and printability, OFETs have been used extensively in the sensing area. For analysis platforms, the construction of sensing layers is a key element for their efficient detection capability. The strategy used to immobilize biomolecules in these devices is especially important for ensuring that the sensing functions of the OFET are effective. Generally, analysis pl
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17

DUDHE, RAVISHANKAR S., HARSHIL N. RAVAL, ANIL KUMAR, and V. RAMGOPAL RAO. "AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS." International Journal of Nanoscience 10, no. 04n05 (2011): 891–98. http://dx.doi.org/10.1142/s0219581x11009222.

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Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were
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18

Wu, Xiaofeng, Ruofei Jia, Jing Pan, Xiujuan Zhang, and Jiansheng Jie. "Roles of interfaces in the ideality of organic field-effect transistors." Nanoscale Horizons 5, no. 3 (2020): 454–72. http://dx.doi.org/10.1039/c9nh00694j.

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19

Pérez-Fuster, Clara, José Vicente Lidón-Roger, Laura Contat-Rodrigo, and Eduardo García-Breijo. "Inexpensive Measuring System for the Characterization of Organic Transistors." Journal of Sensors 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/4286894.

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A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs) and organic electrochemical transistors (OECTs) according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinyl)pentacene (TIPS-pentacene). The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs) that offer a four-quadrant ± 100 V output, with resolution
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20

Kevin, Punarja, Mohammad Azad Malik, Paul O'Brien, et al. "Nanoparticles of Cu2ZnSnS4as performance enhancing additives for organic field-effect transistors." Journal of Materials Chemistry C 4, no. 22 (2016): 5109–15. http://dx.doi.org/10.1039/c6tc01650b.

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21

Quinn, Jesse T. E., Jiaxin Zhu, Xu Li, Jinliang Wang, and Yuning Li. "Recent progress in the development of n-type organic semiconductors for organic field effect transistors." Journal of Materials Chemistry C 5, no. 34 (2017): 8654–81. http://dx.doi.org/10.1039/c7tc01680h.

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22

Jeong, Yong, Jeong Oh, Ho Song, and Tae An. "A Quinacridone-Diphenylquinoxaline-Based Copolymer for Organic Field-Effect Transistors." Polymers 11, no. 3 (2019): 563. http://dx.doi.org/10.3390/polym11030563.

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In this work, we characterized poly(quinacridone-diphenylquinoxaline) (PQCTQx). PQCTQx was synthesized by a Suzuki coupling reaction and the synthesized PQCTQx was used as a polymeric semiconducting material in organic field-effect transistors (OFETs) to research the potential of using quinacridone derivatives. The measured field-effect mobility of the pristine PQCTQx film was 6.1 × 10−3 cm2/(V·s). A PQCTQx film heat-treated at 150 °C exhibited good field-effect performances with a hole mobility of 1.2 × 10−2 cm2/(V·s). The improved OFET behaviors resulting from the mild thermal treatment was
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23

Hoang, Mai Ha, Dinh Long Phan, and Trinh Tung Ngo. "EFFECT OF MOLECULAR STRUCTURE OF PORPHYRINS ON THEIR SEMICONDUCTING PROPERTIES." Vietnam Journal of Science and Technology 54, no. 3 (2016): 356. http://dx.doi.org/10.15625/0866-708x/54/3/6492.

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In this work, we report on the fabrication of organic field-effect transistors (OFETs) using solution processable semiconducting porphyrins 4TBPZ and 2TBPZ. The effect of semiconductor crystal structure on the performance of OFETs was investigated. These single-crystal devices were revealed to exhibit good performance with a maximum carrier mobility for hole of 0.40 cm2 V-1 s-1 and high current on/off ratios. The present work, representing our continuous efforts in understanding the relationship between molecular structure, crystal packing, and OFET performance of semiconducting porphyrins, wi
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24

Yi, Mingdong, Ming Xie, Yaqing Shao, et al. "Light programmable/erasable organic field-effect transistor ambipolar memory devices based on the pentacene/PVK active layer." Journal of Materials Chemistry C 3, no. 20 (2015): 5220–25. http://dx.doi.org/10.1039/c5tc00680e.

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25

Minami, Tsuyoshi, Tsukuru Minamiki, and Shizuo Tokito. "An anion sensor based on an organic field effect transistor." Chemical Communications 51, no. 46 (2015): 9491–94. http://dx.doi.org/10.1039/c5cc02643a.

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An OFET sensor device possessing an anion receptor was able to electrically detect basic anion species in water, meaning that OFETs can effectively read out anion recognition behaviour of supramolecular receptors.
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Choi, Sangmoo, Felipe A. Larrain, Cheng-Yin Wang, Canek Fuentes-Hernandez, Wen-Fang Chou, and Bernard Kippelen. "Self-forming electrode modification in organic field-effect transistors." Journal of Materials Chemistry C 4, no. 35 (2016): 8297–303. http://dx.doi.org/10.1039/c6tc02028c.

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High-performance top-gate TIPS-pentacene/PTAA OFETs having low contact resistance were fabricated by mixing PFBT directly into the semiconductor solution and spin-coating the solution on bare silver electrodes.
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27

XU, HONGGUANG, FENG RAN, YUAN JI, JIMEI ZHANG, and WENQING ZHU. "STUDY OF ORGANIC THIN FILM TRANSISTOR WITH PHOTOPATTERNED GATE DIELECTRIC." Modern Physics Letters B 26, no. 31 (2012): 1250204. http://dx.doi.org/10.1142/s0217984912502041.

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In order to investigate the feasibility of gating organic field-effect transistors (OFETs) using a photosensitive photoresist material, pentacene-based OFETs were fabricated on indium tin oxide (ITO) glass. The gate dielectric was found to be easily patterned by spin coating and UV exposure, and has an excellent surface roughness of 0.22 nm and good insulating properties, resulting in a low leakage current (49 nA at 2 MV/cm) at a dielectric thickness of 290 nm. The OFET with photopatterned gate dielectric exhibited good electric characteristics, including a high field-effect mobility of 0.15 c
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28

Takaya, Tomotsugu, Melaku Dereje Mamo, Makoto Karakawa, and Yong-Young Noh. "Isoindigo benzodifurandione based conjugated polymers for high performance organic field-effect transistors." Journal of Materials Chemistry C 6, no. 29 (2018): 7822–29. http://dx.doi.org/10.1039/c8tc02348d.

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We report isoindigo based copolymers, poly(isoindigo benzodifurandione-bithiophene-alkoxyl) (PIBDF-BTO) and poly(isoindigo-bithiophene-alkoxyl) (PI-BTO) for high performance organic field-effect transistors (OFETs).
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29

Lai, Stefano, Giulia Casula, Pier Carlo Ricci, Piero Cosseddu, and Annalisa Bonfiglio. "All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques." Applied Sciences 10, no. 19 (2020): 6656. http://dx.doi.org/10.3390/app10196656.

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The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshol
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30

Ruiz, C., I. Arrechea-Marcos, A. Benito-Hernández, et al. "Solution-processed N-trialkylated triindoles for organic field effect transistors." Journal of Materials Chemistry C 6, no. 1 (2018): 50–56. http://dx.doi.org/10.1039/c7tc03866f.

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31

Suzuki, Yoshiharu, and Naoki Asakawa. "Stochastic Resonance in Organic Electronic Devices." Polymers 14, no. 4 (2022): 747. http://dx.doi.org/10.3390/polym14040747.

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Stochastic Resonance (SR) is a phenomenon in which noise improves the performance of a system. With the addition of noise, a weak input signal to a nonlinear system, which may exceed its threshold, is transformed into an output signal. In the other words, noise-driven signal transfer is achieved. SR has been observed in nonlinear response systems, such as biological and artificial systems, and this review will focus mainly on examples of previous studies of mathematical models and experimental realization of SR using poly(hexylthiophene)-based organic field-effect transistors (OFETs). This phe
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Allard, Sybille, Michael Forster, Benjamin Souharce, Heiko Thiem, and Ullrich Scherf. "Organic Semiconductors for Solution-Processable Field-Effect Transistors (OFETs)." Angewandte Chemie International Edition 47, no. 22 (2008): 4070–98. http://dx.doi.org/10.1002/anie.200701920.

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33

Coluccio, Maria Laura, Salvatore A. Pullano, Marco Flavio Michele Vismara, et al. "Emerging Designs of Electronic Devices in Biomedicine." Micromachines 11, no. 2 (2020): 123. http://dx.doi.org/10.3390/mi11020123.

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A long-standing goal of nanoelectronics is the development of integrated systems to be used in medicine as sensor, therapeutic, or theranostic devices. In this review, we examine the phenomena of transport and the interaction between electro-active charges and the material at the nanoscale. We then demonstrate how these mechanisms can be exploited to design and fabricate devices for applications in biomedicine and bioengineering. Specifically, we present and discuss electrochemical devices based on the interaction between ions and conductive polymers, such as organic electrochemical transistor
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34

Suzuki, Yoshiharu, Teruo Kanki, Hidekazu Tanaka, et al. "Stochastic Resonance in Bioinspired Electronic Device Using Polymer Field Effect Transistors." Key Engineering Materials 790 (November 2018): 20–27. http://dx.doi.org/10.4028/www.scientific.net/kem.790.20.

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Stochastic resonance (SR) phenomenon is emerged in organic field effect transistors (OFETs) using $\pi$-conjugated polymer, where application of external noise to the OFET system enhances signal/information processing performance which is often found in biological systems.The channel conductivity of the OFET is slightly increased by spin-coating using heated semiconductor polymer solution with heated glass substrate.In order to improve frequency responses of OFET, optimal width of the gate electrode is explored. Furthermore, it turns out that scratching and removing semiconductor film outside
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Tanmoy, Sarkar, Shamieh Basel, Verbeek Roy, Jisk Kronemeijer Auke, H. Gelinck Gerwin, and Frey Gitti. "Tuning Contact Resistance in Top-Contact p-Type and n-Type Organic Field Effect Transistors by Self-Generated Interlayers." Advanced Functional Materials, no. 2019 (December 19, 2019): 1805617. https://doi.org/10.1002/adfm.201805617.

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Contact resistance significantly limits the performance of organic field-effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work-function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom-contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top-contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p- and n-type devices that is also suitable for top-contact OFETs. In
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36

Long, Dang Xuan, Yong Xu, Huai-xin Wei, Chuan Liu, and Yong-Young Noh. "Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide." Physical Chemistry Chemical Physics 17, no. 31 (2015): 20160–67. http://dx.doi.org/10.1039/c5cp03369a.

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37

Zhang, Rui Rui, Shi Wei Lin, and Jian Jun Liao. "Charge Injection in Regioregular Poly-(3-Hexythiophene) Organic Field-Effect Transistors with Different Metal Electrodes." Advanced Materials Research 873 (December 2013): 752–56. http://dx.doi.org/10.4028/www.scientific.net/amr.873.752.

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Here we report on regioregular poly-(3-hexythiophene) (P3HT) organic field-effect transistors (OFETs) with various metal electrodes: pristine Au, pristine Cr, and Cr/Au. Compared to the performance of OFETs using different electrodes, the OFETs with Au electrode have better mobility (μ = 0.0090 cm2/Vs) and larger current at the same source-drain voltage and gate voltage. The enhancement of the device performance with Au electrode can be attributed to a small contact resistance and a small barrier height to P3HT for hole carrier injection.
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38

Kim, Seongyun, Soomin Ryu, Jihae Ahn, et al. "Solution-Processable Benzo[b]thieno[2,3-d]thiophene Derivatives as Organic Semiconductors for Organic Thin-Film Transistors." Coatings 13, no. 8 (2023): 1417. http://dx.doi.org/10.3390/coatings13081417.

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Two new benzo[b]thieno[2,3-d]thiophene (BTT) derivatives, 2-(benzo[b]thiophen-5-yl)benzo[b]thieno[2,3-d]thiophene (compound 2), and 2-(benzo[b]thieno[2,3-d]thiophene-2yl)dibenzo[b,d]thiophene (compound 3) have been synthesized and utilized as solution-processable small molecular organic semiconductors for organic field-effect transistors (OFETs). The physicochemical characteristics of the recently created substances were analyzed using thermogravimetric analysis (TGA), differential scanning calorimeter (DSC), and UV-vis spectroscopy. Subsequently, the above-mentioned substances were employed a
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39

Trul, Askold A., Alexey S. Sizov, Victoria P. Chekusova, et al. "Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistors." Journal of Materials Chemistry C 6, no. 36 (2018): 9649–59. http://dx.doi.org/10.1039/c8tc02447b.

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40

Ali, Kamran, Ullrich Pietsch, and Souren Grigorian. "Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique." Journal of Applied Crystallography 46, no. 4 (2013): 908–11. http://dx.doi.org/10.1107/s0021889813004718.

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Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3-hexylthiophene) (P3HT) active layer using a dip-coating method. The field-effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X-ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline o
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Niazi, Muhammad Rizwan, Ehsan Hamzehpoor, Pegah Ghamari, Igor F. Perepichka, and Dmitrii F. Perepichka. "Nitroaromatics as n-type organic semiconductors for field effect transistors." Chemical Communications 56, no. 47 (2020): 6432–35. http://dx.doi.org/10.1039/d0cc01236j.

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The utility of the NO<sub>2</sub>-group in the design of organic semiconductors is demonstrated by fabricating OFETs with 5 nitrofluorenone derivatives and analyzing the effects of molecular and crystal structure on their charge transport characteristics.
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42

Jeong, Yong Jin, Dong-Jin Yun, Jaeyoung Jang, et al. "Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing." Physical Chemistry Chemical Physics 17, no. 9 (2015): 6635–43. http://dx.doi.org/10.1039/c4cp05787b.

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Solution-processed organic field effect transistors (OFETs) have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices.
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43

Kim, Gyoungsik, Hyoeun Kim, Moonjeong Jang, Yun Kyung Jung, Joon Hak Oh, and Changduk Yang. "Ultra-narrow-bandgap thienoisoindigo polymers: structure–property correlations in field-effect transistors." Journal of Materials Chemistry C 4, no. 40 (2016): 9554–60. http://dx.doi.org/10.1039/c6tc03693g.

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A systematic study on the microstructure-property relationship in thienoisoindigo (TIIG)-based polymers provides the guidance for the synthesis of high-performance polymers by tuning the polarity of charge carrier in organic field-effect transistors (OFETs).
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44

Long, Dang Xuan, Makoto Karakawa, and Yong-Young Noh. "An improvement of performance in n-channel organic field effect transistors with N-phenyl[60]fulleropyrrolidines by molecular doping." Physical Chemistry Chemical Physics 18, no. 34 (2016): 23904–9. http://dx.doi.org/10.1039/c6cp02940j.

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45

Yildirim, Faruk Altan, Ronald Meixner, Robert Roman Schliewe, Wolfgang Bauhofer, Holger Goebel, and Wolfgang Krautschneider. "Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors." MRS Proceedings 937 (2006). http://dx.doi.org/10.1557/proc-0937-m10-05.

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ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFE
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46

Małachowski, M., and J. Żmija. "Organic field-effect transistors." Opto-Electronics Review 18, no. 2 (2010). http://dx.doi.org/10.2478/s11772-010-0008-9.

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AbstractThe paper reviews the recent year publications concerning organic field-effect transistors (OFETs). A lot of works have been performed to help understanding the structural and electrical properties of materials used to construct OFETs. It has been established that in partially ordered systems, the charge transport mechanism is thermally activated and field-assisted hopping transport and the hopping transport between disorder-induced localized states dominate over intrinsic polaronic hopping transport seen in organic single crystals. Many research attempts have been carried out on the d
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47

Sakai, Heisuke, Koudai Konno, and Hideyuki Murata. "Tuning the Threshold Voltage in Organic Field Effect Transistors by Space Charge Polarization of Gate Dielectrics." MRS Proceedings 1154 (2009). http://dx.doi.org/10.1557/proc-1154-b10-09.

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AbstractStudies of gate dielectrics in organic field effect transistors (OFETs) have been attractive because the electric properties of OFETs are susceptibly affected by the choice of the gate dielectrics. Here, we demonstrate a tunable threshold voltage in an organic field effect transistor (OFET) using an ion-dispersed gate dielectrics. By applying external electric field (Vex) to the gate dielectrics, the dispersed ions in the gate dielectrics are separated by electrophoresis and form space charge polarization. The drain current of the OFET increased over 1.9 times and the threshold voltage
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48

Li, Haoyuan, and Jean-Luc Brédas. "Developing molecular-level models for organic field-effect transistors." National Science Review, July 18, 2020. http://dx.doi.org/10.1093/nsr/nwaa167.

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Abstract Organic field-effect transistors (OFETs) are not only functional devices but also represent an important tool for measuring the charge-transport properties of organic semiconductors (OSs). Thus, efforts to understand the performance and characteristics of OFET devices are not only useful in helping achieve higher device efficiencies but also critical to ensuring accuracy in the evaluations of OS charge mobilities. These studies rely on OFET device models, which connect the measured current characteristics to the properties of the OSs. Developing such OFET models requires good knowledg
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49

Natali, Marco, Mario Prosa, Alessandro Longo, et al. "On the Nature of Charge-Injecting Contacts in Organic Field-Effect Transistors." June 10, 2020. https://doi.org/10.1021/acsami.0c05106.

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Organic field-effect transistors (OFETs) are key enabling devices for plastic electronics technology, which has a potentially disruptive impact on a variety of application fields, such as health, safety, and communication. Despite the tremendous advancements in understanding the OFET working mechanisms and device performance, further insights into the complex correlation between the nature of the charge-injecting contacts and the electrical characteristics of devices are still necessary. Here, an in-depth study of the metal&ndash;organic interfaces that provides a direct correlation to the per
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Onojima, Norio, Hiroki Saito, Naomichi Nishio, and Takamasa Kato. "Electrostatic Spray Deposition of Highly-Crystalline TIPS Pentacene Thin Films for Fabrication of Organic Field-Effect Transistors." MRS Proceedings 1501 (2012). http://dx.doi.org/10.1557/opl.2012.1660.

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ABSTRACTThis paper demonstrates that electrostatic spray deposition (ESD) method is a promising solution process to fabricate highly-crystalline organic films (6,13-bis(triisopropylsilylethynyl) pentacene; TIPS pentacene) for the use in bottom-contact organic field-effect transistors (OFETs). We obtained large crystalline domains (i.e., molecularly-oriented domains) by using an o-DCB:acetone mixed solvent (1:1), and observed good transistor behavior in an OFET having the channel length of 20 μm.
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