Academic literature on the topic 'Organic thin-film transistors (OTFTs)'

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Journal articles on the topic "Organic thin-film transistors (OTFTs)"

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Li, Liqiang, Qingxin Tang, Hongxiang Li, Wenping Hu, Xiaodi Yang, Zhigang Shuai, Yunqi Liu, and Daoben Zhu. "Organic thin-film transistors of phthalocyanines." Pure and Applied Chemistry 80, no. 11 (January 1, 2008): 2231–40. http://dx.doi.org/10.1351/pac200880112231.

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Organic thin-film field-effect transistors (OTFTs) are emerging as attractive candidates for low-price, large-area, and flexible circuit applications. A variety of organic compounds have been utilized as active semiconductor materials for OTFTs, among which phthalocyanine compounds have attracted considerable attention owing to their remarkable chemical and thermal stability as well as good field-effect performance. Here, we review recent results on the phthalocyanine-based OTFTs. The correlation between the crystal packing structure and the charge transport property is discussed, and we conclude with a description of the future prospects for phthalocyanine-based OTFTs.
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LI, YUNING, and BENG S. ONG. "HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS." COSMOS 05, no. 01 (May 2009): 59–77. http://dx.doi.org/10.1142/s0219607709000427.

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Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.
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Jiménez-Tejada, Juan A., Adrián Romero, Jesús González, Nandu B. Chaure, Andrew N. Cammidge, Isabelle Chambrier, Asim K. Ray, and M. Jamal Deen. "Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine." Micromachines 10, no. 10 (October 10, 2019): 683. http://dx.doi.org/10.3390/mi10100683.

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In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. The contact region is also seen as a fundamental part of the device which is sensitive to physical, chemical and fabrication variables. A compact model for OTFTs, which includes the effects of the contacts, and a recent proposal of an associated evolutionary parameter extraction procedure are reviewed. Both the model and the procedure are used to assess the effect of the annealing temperature on a nickel-1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine (NiPc6)-based OTFT. A review of the importance of phthalocyanines in organic electronics is also provided. The characterization of the contact region in NiPc6 OTFTs complements the results extracted from other physical–chemical techniques such as differential scanning calorimetry or atomic force microscopy, in which the transition from crystal to columnar mesophase imposes a limit for the optimum performance of the annealed OTFTs.
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CASTRO-CARRANZA, ALEJANDRA, BENJAMIN IÑIGUEZ, and JOSEP PALLARÈS. "CHARGE BEHAVIOR IN ORGANIC THIN FILM TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 04 (December 2011): 727–48. http://dx.doi.org/10.1142/s0129156411007021.

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In this work, we review the physical properties of organic materials and transistors, discussing especially the charge transport mechanisms. Finally, we present an analytical and continuous charge model for Organic Thin Film Transistors (OTFTs) from which analytical expressions of all the total capacitances are obtained. They are developed and finally written as continuous explicit functions of the applied voltage, resulting in a complete charge-based small-signal model composed by a unified charge control model derived from Poisson equation assuming an exponential density of localized states. This charge model was developed from a previously proposed analytical DC current model assuming a hopping based transport. Therefore our complete small signal model has the potential to be successfully used in circuit simulators for the design of OTFTs.
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Cavallari, Marco Roberto, Loren Mora Pastrana, Carlos Daniel Flecha Sosa, Alejandra Maria Rodriguez Marquina, José Enrique Eirez Izquierdo, Fernando Josepetti Fonseca, Cleber Alexandre de Amorim, Leonardo Giordano Paterno, and Ioannis Kymissis. "Organic Thin-Film Transistors as Gas Sensors: A Review." Materials 14, no. 1 (December 22, 2020): 3. http://dx.doi.org/10.3390/ma14010003.

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Organic thin-film transistors (OTFTs) are miniaturized devices based upon the electronic responses of organic semiconductors. In comparison to their conventional inorganic counterparts, organic semiconductors are cheaper, can undergo reversible doping processes and may have electronic properties chiefly modulated by molecular engineering approaches. More recently, OTFTs have been designed as gas sensor devices, displaying remarkable performance for the detection of important target analytes, such as ammonia, nitrogen dioxide, hydrogen sulfide and volatile organic compounds (VOCs). The present manuscript provides a comprehensive review on the working principle of OTFTs for gas sensing, with concise descriptions of devices’ architectures and parameter extraction based upon a constant charge carrier mobility model. Then, it moves on with methods of device fabrication and physicochemical descriptions of the main organic semiconductors recently applied to gas sensors (i.e., since 2015 but emphasizing even more recent results). Finally, it describes the achievements of OTFTs in the detection of important gas pollutants alongside an outlook toward the future of this exciting technology.
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Lee, Sangyun, Bonwon Koo, Jae-Geun Park, Hyunsik Moon, Jungseok Hahn, and Jong Min Kim. "Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays." MRS Bulletin 31, no. 6 (June 2006): 455–59. http://dx.doi.org/10.1557/mrs2006.118.

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AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.
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Alam, Mir Waqas. "Current progress in electrode/pentacene interfaces of pentacene-based organic thin films transistors: A review." Materials Express 9, no. 7 (October 1, 2019): 691–703. http://dx.doi.org/10.1166/mex.2019.1574.

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Organic thin-film transistors (OTFTs) in device physics is currently considered as a standout amongst the most progressive concepts of device applications. Currently, due to humongous technological progress, OTFT with high mobilities can be produced that are comparable to silicon technology. This remarkable mobility is considered as a benchmark for more demanding applications which is accomplished by novel, tenable organic semiconductor materials such as pentacene and the tailoring of their geometries and characteristics. In addition, pentacene demonstrates charge carrier mobilities up to 5.5 cm2/Vs. However very low mobility was achieved in OTFTs due to fabrication defects, material processing etc. The most important defect that arise during the fabrication process is contact interfaces in OTFTs, which highly effect the device performance. Thus, in this article, we will review the current progress of contact engineering of OTFTs with special emphasis on electrode/pentacene interfaces of pentacene-based organic thin film transistors. Further, this review aims to provide an in-depth understanding of bottlenecks to improve the OTFTs performance. After a short introduction, the historical background of pentacene-based OTFTs is discussed that focuses on different methods and materials employed so far to improve the contact between pentacene layer. Also, the review presents the key challenges in the geometry of pentacene based OTFT that is the direct deposition of metal electrodes onto the pentacene channel layer in top contact interface due to which poor carrier injection, high barrier height, chemical diffusion between both layers, high contact resistance and surface roughness has been observed which highly affects the device performance especially the field effect mobility. Also, the state-of-the-art devices and related models that widely employ pentacene are presented. This detailed review will assist the future researchers in understanding and improving field-effect properties of OTFTs.
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FORTUNA, LUIGI, MATTIA FRASCA, ELENA UMANA, MANUELA LA ROSA, DONATA NICOLOSI, and GIOVANNI SICURELLA. "ORGANIC CHUA'S CIRCUIT." International Journal of Bifurcation and Chaos 17, no. 09 (September 2007): 3035–45. http://dx.doi.org/10.1142/s0218127407018841.

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In this paper, an entire organic Chua's circuit is presented. The adopted technology is one of the most advanced in the post-silicon era and extends the applications of classical silicon devices. The electronic circuit design is based on Organic Thin-Film Transistors (OTFTs). New electronic blocks based on OTFT are designed to be suitable with the organic technology features. Typical dynamics of the Chua's circuit have been reproduced.
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Li, Yao, He Wang, Xuehui Zhang, Qiong Zhang, Xuesong Wang, Danfeng Cao, Zuosen Shi, Donghang Yan, and Zhanchen Cui. "Organic thin film transistors with novel photosensitive polyurethane as dielectric layer." RSC Advances 6, no. 7 (2016): 5377–83. http://dx.doi.org/10.1039/c5ra22970g.

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Saikia, D., R. Sarma, P. Saikia, and P. K. Saikia. "Tetracene Based OTFT with Nd2O3-dielectric Layer." Journal of Scientific Research 2, no. 2 (April 26, 2010): 214–20. http://dx.doi.org/10.3329/jsr.v2i2.4094.

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Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010)
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Dissertations / Theses on the topic "Organic thin-film transistors (OTFTs)"

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Vorona, Mikhail. "Anthracene-Based Molecules for Organic Thin-Film Transistor Integration." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/41536.

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Organic electronics are devices based on semiconductors derived from carbon based molecules and polymers. These devices can be made flexible, lightweight and potentially inexpensive with the development of economies of scale. Specific examples of organic electronics include organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs) and organic photovoltaic (OPVs). Anthracene-based semiconductors are materials that have generated great interest primarily because of their structural planarity, potential for strong intermolecular interactions, air stability and ideal frontier molecular orbital energy levels. In this thesis, we detail two publications that examined functionalized anthracene molecules integrated into OTFTs, along with their thermal, electrochemical and optical properties. We started by examining seven novel 9,10-anthracene-based molecules. It was found that functionalization of the 9,10-positions with different phenyl derivatives resulted in negligible variation in the optical properties with minor (±0.10 eV) changes in electrochemical behaviour, while the choice of phenyl derivative greatly affected the thermal stability whereby the decomposition temperatures (Td) varied by as much as 128 °C between certain functionalized derivatives. The findings suggested that functionalization of the 9,10-position of anthracene leads to an effective handle for tuning of the thermal stability while having little to no effect on the optical properties and the solid-state arrangement. We continued with the synthesis of several novel anthracene derivatives which were di-substituted at the 2,6-positions. It was found that 2,6-functionalization with various fluorinated phenyl derivatives led to negligible changes in the optical behaviour while influencing the electrochemical properties (±0.10 eV). Furthermore, the choice of fluorinated phenyl moiety had noticeable effects on melting point and thermal stability (ΔTm < 55 °C and ΔTd < 65 °C). OTFTs were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. The addition of fluorine groups on the phenyl groups led to a transition from p-type behaviour to n-type behaviour in BGBC OTFTs. The results indicated that the choice of functional group as well as its functionalization location, at the 9,10- and 2,6-positions, can act as powerful handles to engineer high performance OTFTs.
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Zocco, Adam T. "Pentacene-based Organic Thin-film Transistors on Paper." University of Cincinnati / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1382950881.

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Seger, Mark J. "OPTIMIZATION OF THE OPTICAL AND ELECTROCHEMICAL PROPERTIES OF DONOR-ACCEPTOR COPOLYMERS THROUGH FUNCTIONAL GROUP AND SIDE CHAIN MODIFICATION." UKnowledge, 2013. http://uknowledge.uky.edu/chemistry_etds/25.

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Donor-acceptor copolymers have received a great deal of attention for application as organic semiconductors, in particular as the active layers in low-cost consumer electronics. The functional groups grafted to the polymer backbones generally dictate the molecular orbital energies of the final materials as well as aid in self-assembly. Additionally, the side chains attached to these functional groups not only dictate the solubility of the final materials, but also their morphological characteristics. The bulk of the research presented in this dissertation focuses on the synthesis and structure-property relationships of polymers containing novel acceptor motifs. Chapter 2 focuses on the synthesis of 1,2-disubstituted cyanoarene monomers as the acceptor motif for copolymerization with known donors. It was found that cyanation of both benzene and thiophene aromatic cores resulted in a decrease of the molecular orbital energy levels. Additionally, the small size of this functional group allowed favorable self-assembly and close π-stacking to occur relative to related acceptor cores carrying alkyl side chains as evidenced by UV-Vis and WAXD data. Chapter 3 describes the systematic variation of side chain branching length and position within a series of phthalimide-based polymers. Branching of the side chains on bithiophene donor units resulted in the expected increase in solubility for these materials. Furthermore, a correlation was found between the branching position, size, and the HOMO energy levels for the polymers. Additionally, it was demonstrated that branching the alkyl side chains in close proximity to polymer backbones does not disrupt conjugation in these systems. A novel acceptor motif based on the 1,3-indanedione unit is presented in Chapter 4. Despite the stronger electron withdrawing capability of this functional group relativeto phthalimide, it was found that polymers based on this unit have the same HOMO molecular orbital energy levels as those presented in Chapter 3. It was found, however, the presence of orthogonal side chains greatly enhanced the solubility of the final polymers. Additionally, UV-Vis and WAXD measurements revealed that thermal annealing had a profound effect on the ordering of these polymers. Despite the presence of orthogonal side chains, long range order and close π-stacking distances were still achieved with these materials. Finally, alkynyl “spacers” were used in Chapter 5 to separate the solubilizing alkyl side chains from the polymer backbones on bithiophene donor monomers. The alkynyl groups allowed for conjugated polymer backbones to be achieved as well as low HOMO energy levels. A correlation between the side chain size, π-stacking distances and HOMO-LUMO energy levels was measured in this polymer series.
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Ganesan, Ramkumar [Verfasser], and Manfred [Akademischer Betreuer] Glesner. "Investigation of Variation in Organic Thin-film Transistors (OTFT) and Design of Variation-aware Organic Circuits / Ramkumar Ganesan. Betreuer: Manfred Glesner." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2015. http://d-nb.info/1112141154/34.

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Bernical, Virginie. "Le Transistor organique transparent : modélisation et premiers essais avec le pentacène." Limoges, 2008. https://aurore.unilim.fr/theses/nxfile/default/67feecc9-6ecf-40de-9870-931b2fb85739/blobholder:0/2008LIMO4064.pdf.

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L'objectif de ce travail est la fabrication de transistors organiques transparents aux longueurs d'onde optiques sur un substrat organique transparent pour des applications ophtalmiques. Après une présentation générale des propriétés électriques et électroniques des matériaux utilisés une étude plus spécifique est dédiée au pentacène. Ce semi-conducteur parmi les plus performant est implémenté lors de la phase expérimentale de ce travail Une recherche bibliographique a été menée sur les transistors à base de pentacène et sur la modélisation des transistors organiques dont le fonctionnement en régime d'accumulation est nécessaire si des courants de fonctionnement significatifs sont recherchés. Dans la partie expérimentale de ce travail, des transistors sont réalisés. La nécessité de mise en œuvre de procédés basses températures est alors mise en évidence. Dans ces conditions des transistors entièrement organiques présentant des mobilités de 6. 10-3 cm2. V-1. S-1 sont obtenus
The goal of this work is the fabrication of transparent organic thin film transistors, at the optical wavelengths, on an organic substratum, for ophthalmic applications. The beginning is a general presentation of physic an electronic properties of organic materials, a paragraph is dedicated to pentacene, the semi-conductor used in the experimental part. Then is studied the modelling of organic thin film transistor in the accumulation regime where the current are significant. The experimental part shows that it is possible to realized organic transparent transistors with classical mobility of 6. 10-3 cm2. V-1. S-1, but it requires low temperatures process
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Kuai, Wenlin. "Faisabilité de transistors organiques à effet de champ fabriqués entièrement en solution." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S013/document.

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Le travail entre dans le cadre de la nouvelle tendance à la recherche d’une électronique mécaniquement flexible basée sur des transistors en couche mince constitués uniquement de matériaux organiques (OTFT). OTFT de type n et de type p ont été fabriqués par la technique de dépôt par impression (inkjet) et étudiés. Les paramètres d’impression (jetabilité, mouillabilité, imprimabilité et possibilité d’obtention de différentes formes), de chaque encre permettant le dépôt de couches conductrices, isolantes et semiconductrices, ont été systématiquement étudiés. Les OTFT de type n basés sur du C60 se sont montrés non fiables, principalement du fait de la faible solubilité du C60 dans les solvants organiques. Les OTFT de type basés sur du Tips-pentacene ont montré par contre une grande fiabilité. Le travail global constitue une large revue des problèmes et difficultés rencontrés dans la fabrication de transistors fabriqués entièrement par impression jet d’encre. Des solutions ont été trouvées et de nouvelles idées sont proposées
Present work deals with the new trend to get highly flexible electronics by using fully Organic Thin-Film Transistor (OTFT) as the basic element of this electronics. Fully organic n-type as well as p-type OTFT processed by inkjet printing are studied. Printing parameters of each ink, jettability, wetting, printability, and patterns optimization, leading to the deposition of conductive contacts, gate insulator and semiconducting active layer are studied. Process of n-type OTFT based on C60 is shown as unreliable, mainly due to the poor solubility of C60 in organic solvent. In the contrary, p-type OTFTs based on Tips-pentacene are much more reliable. The work is a large overview of the issues and the difficulties that have been to jump and to solve in the way to fabricate fully printed organic transistors. Some solutions have been given and new ideas have been proposed
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Zhu, Wen Wei. "Organic thin film transistors." Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19597.

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Organic thin film transistors (OTFTs) have been fabricated using four different semiconducting polymers: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), polyhedral oligomeric silsesquioxanes (POSS) poly (2-methoxy-5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene) (MEH-PPV-POSS), poly[N-(3-methylphenyl)-N,N-diphenylamine-4,4'-diyl] (poly-TPD), and polyhedral oligomeric silsesquioxanes (POSS) poly (N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD-POSS). These OTFTs were fabricated on heavily doped «-type silicon wafers with thermally grown silicon dioxide layer was used as gate insulator. Except for MEH-PPV, the OTFTs studied in this work are the first for the above organic semiconductor materials. From results of current-voltage measurements, it was observed that the present OTFTs showed I-V characteristics of typical /^-channel thin film transistors. Some of the fabricated OTFTs showed performance with relatively large field-effect mobilities (>10~4 cm2 V"1 s"1). The mobility of semiconducting polymer with polyhedral oligomeric silsesquioxanes (POSS) was at least one order of magnitude larger than that of parent polymer without the POSS. The largest mobility value was obtained on poly-TPD-POSS (4.34 x 10"4 cm2 V"1 s"1) in room atmosphere and at room temperature. Thermal annealing under different conditions was carried out on the polymers and the effects on carrier field-effect mobilities were examined. The thermal annealing can increase slightly the field-effect mobilities of the polymers without POSS. However, no significant effect was observed on the field-effect mobilities of the polymers with POSS.
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Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced that are intensively characterized and used as a basis for later device simulation. Therefore, among others 4-point-probe measurements are used for a potential mapping of the transistor channel and via transfer line method the contact resistance is measured in a temperature range between 173 and 353 K. From later comparison with the simulation models, it appears that the geometrical resistance is actually more important for the transistor performance than the resistance of charge-carrier injection at the electrodes. The charge-carrier mobility is detailed evaluated and discussed. Within the observed temperature range a Arrhenius-like thermal activation of the charge- carrier transport is determined with an activation energy of 170 meV. Furthermore, a dependence of the electric field-strength of a Poole-Frenkel type is found with a Poole-Frenkel factor of about 4.9 × 10E−4 (V/m) −0.5 that is especially important for transistors with small channel length. With these two considerations, already a good agreement between device simulation and measurement data is reached. In a detailed discussion of the dependence on the charge-carrier density and from comparison with established the charge-carrier mobility models, an exponential density of states could be estimated for the organic semiconductor. However, reliability of OTFTs remains one of the most challenging hurdles to be understood and resolved for broad commercial applications. In particular, bias-stress is identified as the key instability under operation for numerous OTFT devices and interfaces. In this work, a novel approach is presented that allows controlling and significantly alleviating the bias-stress effect by using molecular doping at low concentrations. For pentacene as semiconductor and SiO2 as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias-stress is explained in terms of the shift of Fermi level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. For transistors prepared in cooperation with the industrial partner, a second effect is observed that can be explained by a model considering a ferroelectric process in the dielectric and counteracts the bias-stress behavior.
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Stott, J. E. "Organic thin film transistors : integration challenges." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1393282/.

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This thesis considers some of the requirements and challenges in the eld of organic thin lm transistors (OTFTs), from the standpoint of large scale integration using low temperature plastic compatible processes. A combination of processes and materials for use in the fabrication of OTFTs is developed, yielding device performance comparable with the state of the art for bottom-contact, bottom-gate, organic small molecule thin lm transistors. High quality silicon nitride (SiNx) gate dielectric material is developed using plasma enhanced chemical vapour deposition (PECVD) at a low temperature (150 C) compatible with plastic substrates. A variety of high quality lms are developed, allowing an investigation into the impact of changes in SiNx composition on OTFT performance. Surface modi cation strategies on SiNx substrates are considered, leading to almost an order of magnitude enhancement in OTFT performance, suggesting a suitable device architecture for large scale integration, and exploitation of novel organic material properties. We then examine organic semiconductor nanowire devices, which have begun to emerge as a new and exciting class of device in recent years. This work explores the possibilities of combining traditional thin lm transistor fabrication techniques with novel organic nanowires and examines the resultant transistor device behaviour. Two-dimensional arrays of nanowire devices are analysed, demonstrating the suitability of devices for large area applications. The combination of a large area and plastic compatible, low temperature dielectric with well known organic semiconductors in thin lm devices suggests that the integration of novel organic nanowires could provide an exciting performance enhancement over traditional OTFT devices.
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Herlogsson, Lars. "Electrolyte-Gated Organic Thin-Film Transistors." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-69636.

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There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages. This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.
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Books on the topic "Organic thin-film transistors (OTFTs)"

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Zaki, Tarek. Short-Channel Organic Thin-Film Transistors. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18896-6.

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Bao, Zhenan. Organic field-effect transistors VII and organic semiconductors in sensors and bioelectronics: 10-12 August 2008, San Diego, California, USA. Edited by SPIE (Society) and Air Products and Chemicals, inc. Bellingham, Wash: SPIE, 2008.

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Bao, Zhenan. Organic field-effect transistors VI: 26-28 August 2007, San Diego, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2007.

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Bao, Zhenan. Organic field-effect transistors VI: 26-28 August 2007, San Diego, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2007.

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(Society), SPIE, and Merck Chemicals Ltd, eds. Organic field-effect transistors X: 22-23 August 2011, San Diego, California, United States. Bellingham, Wash: SPIE, 2011.

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Bao, Zhenan, and Iain McCulloch. Organic field-effect transistors VIII: 3-5 August 2009, San Diego, California, United States. Edited by SPIE (Society), Aldrich Chemical Company, Corning Incorporated, and Solvay S. A. (Firm). Bellingham, Wash: SPIE, 2009.

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Bao, Zhenan, and Iain McCulloch. Organic field-effect transistors IX: 2-4 August 2010, San Diego, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2010.

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Calif.) Organic Field-Effect Transistors (Conference) (12th 2013 San Diego. Organic Field-Effect Transistors XII, and Organic Semiconductors in Sensors and Bioelectronics VI: 26-29 August 2013, San Diego, California, United States. Edited by Bao Zhenan, McCulloch Iain 1964-, Shinar Ruth, Kymissis Ioannis, SPIE (Society), Aldrich Materials Science (United States), and Organic Semiconductors in Sensors and Bioelecronics (6th : 2013 : San Diego, Calif.). Bellingham, Washington, USA: SPIE, 2013.

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Nathan, Arokia, Flora Li, Yiliang Wu, and Beng S. Ong. Organic Thin Film Transistor Integration: A Hybrid Approach. Wiley & Sons, Incorporated, John, 2011.

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Nathan, Arokia, Flora Li, Yiliang Wu, and Beng S. Ong. Organic Thin Film Transistor Integration: A Hybrid Approach. Wiley & Sons, Incorporated, John, 2013.

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Book chapters on the topic "Organic thin-film transistors (OTFTs)"

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Kaushik, B. K., Brijesh Kumar, Y. S. Negi, and Poornima Mittal. "Prospects and Limitations of Organic Thin Film Transistors (OTFTs)." In Advances in Intelligent Systems and Computing, 125–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-30111-7_13.

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Zaki, Tarek. "Organic Thin-Film Transistors." In Short-Channel Organic Thin-Film Transistors, 33–56. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18896-6_3.

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Brotherton, S. D. "Organic TFTs." In Introduction to Thin Film Transistors, 339–403. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_10.

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Fukuda, Kenjiro, and Shizuo Tokito. "Printed Organic Thin-Film Transistors." In Organic Electronics Materials and Devices, 139–54. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55654-1_6.

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Kang, Moon Sung, Jeong Ho Cho, and Se Hyun Kim. "Electrolyte-Gating Organic Thin Film Transistors." In Large Area and Flexible Electronics, 253–74. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527679973.ch8.

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Takeya, Jun. "Solution-Processed Organic Thin-Film Transistors." In Chemical Science of π-Electron Systems, 589–604. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55357-1_35.

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Zaki, Tarek. "Introduction to Organic Electronics." In Short-Channel Organic Thin-Film Transistors, 5–31. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18896-6_2.

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Jo, Jeong Dai, Kwang Young Kim, Eung Sug Lee, and Masayoshi Esashi. "Fabrication of Organic Thin Film Transistor(OTFT) Array by Using Nanoprinting Process." In Experimental Mechanics in Nano and Biotechnology, 385–88. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.385.

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Salleo, Alberto, and Michael L. Chabinyc. "Electrical and Environmental Stability of Polymer Thin-Film Transistors." In Organic Electronics, 108–31. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527608753.ch5.

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Zaki, Tarek. "Motivation." In Short-Channel Organic Thin-Film Transistors, 1–4. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18896-6_1.

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Conference papers on the topic "Organic thin-film transistors (OTFTs)"

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Liu, Shih-Ting, Tao-Chi Liu, Ming-Lun Chang, King-Ting Chiang, Su-Ping Chiu, Jandel Lin, Po-Yuan Lo, and Pei-Wen Li. "Non-Destructive Failure Analysis in Organic Thin-Film Transistors." In ISTFA 2009. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.istfa2009p0144.

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Abstract:
Abstract Contrary to conventional Si-based device, organic thin-film transistors (OTFTs) constituting organic semiconductors are easily destroyed. Investigating failures using traditional FA techniques like electron microscopy or cross section is hard to procure. Therefore, the purpose of this paper attempts to develop approaches for failure analysis of OTFTs. We successfully demonstrate a non-destructive technique for defect inspection and localization, exactly specifying the failure of OTFT with a void existing in the organic dielectric. Application of optical beam induced resistance change (OBIRCH) in current leakage localization is shown. Non-distorted cross-section sample preparation and analysis of internal structure by electron microscopy are also developed. Moreover, the failure of OTFT induced by high driving voltage punch-through is analyzed using techniques established in the article. Particular elongation of the gate metal was found to be the failure mode.
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Gray, Caprice, Jianna Wang, Gregg Duthaler, Andrew Ritenour, and Paul S. Drzaic. "Screen printed organic thin film transistors (OTFTs) on a flexible substrate." In International Symposium on Optical Science and Technology, edited by Denis Fichou and Zhenan Bao. SPIE, 2001. http://dx.doi.org/10.1117/12.451470.

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Lee, S., T. Yokota, and T. Someya. "Threshold Voltage Control of Organic Thin Film Transistors (OTFTs)by Using Floated Double Gate Structure." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.f-1-04.

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Reddy, Avuthu Sai Guruva, Binu Baby Narakathu, Ali Eshkeiti, Bradely J. Bazuin, Margaret Joyce, and Massood Z. Atashbar. "Fully printed organic thin film transistors (OTFT) based flexible humidity sensors." In 2013 IEEE Sensors. IEEE, 2013. http://dx.doi.org/10.1109/icsens.2013.6688309.

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Singh, Anshu, and Poornima Mittal. "Organic Thin Film Transistor and Organic Inverter based on Cylindrical Gate OTFT." In 2016 International Conference on Emerging Trends in Communication Technologies (ETCT). IEEE, 2016. http://dx.doi.org/10.1109/etct.2016.7882981.

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Jackson, T. "Organic thin film transistors." In Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting. IEEE, 1997. http://dx.doi.org/10.1109/leos.1997.630671.

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Musa, Nurhazwani, Nurul Farhanah Ab Halim, Mohd Noor Ahmad, Zulkhairi Zakaria, and Uda Hashim. "Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)." In 11TH ASIAN CONFERENCE ON CHEMICAL SENSORS: (ACCS2015). Author(s), 2017. http://dx.doi.org/10.1063/1.4975268.

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Jackson, Thomas N. "Solution-Processed Organic Thin Film Transistors." In Organic Materials and Devices for Displays and Energy Conversion. Washington, D.C.: OSA, 2007. http://dx.doi.org/10.1364/omd.2007.otua2.

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Labram, John G. "Thin film retinomorphic sensors." In Organic and Hybrid Field-Effect Transistors XX, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2021. http://dx.doi.org/10.1117/12.2593517.

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Singh, Thokchom B., Pinar Senkarabacack, Philip Stadler, Helmut Neugebauer, Niyazi Serdar Sariciftci, and James Grote. "Interfacial Effects in Organic Thin-Film Transistors." In Organic Photonics and Electronics. Washington, D.C.: OSA, 2006. http://dx.doi.org/10.1364/ope.2006.opwc2.

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Reports on the topic "Organic thin-film transistors (OTFTs)"

1

Ray, Asim K. Design of Novel Organic Thin Film Transistors for Wearable Electronics. Fort Belvoir, VA: Defense Technical Information Center, August 2012. http://dx.doi.org/10.21236/ada565909.

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Park, Chan E. Nanocomposite Gate Dielectrics With Nanoparticles for Organic Thin Film Transistors. Fort Belvoir, VA: Defense Technical Information Center, September 2006. http://dx.doi.org/10.21236/ada473096.

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