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Journal articles on the topic 'Organic thin-film transistors (OTFTs)'

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Published: 4 June 2021
Last updated: 6 February 2022

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1

Li, Liqiang, Qingxin Tang, Hongxiang Li, Wenping Hu, Xiaodi Yang, Zhigang Shuai, Yunqi Liu, and Daoben Zhu. "Organic thin-film transistors of phthalocyanines." Pure and Applied Chemistry 80, no. 11 (January 1, 2008): 2231–40. http://dx.doi.org/10.1351/pac200880112231.

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Organic thin-film field-effect transistors (OTFTs) are emerging as attractive candidates for low-price, large-area, and flexible circuit applications. A variety of organic compounds have been utilized as active semiconductor materials for OTFTs, among which phthalocyanine compounds have attracted considerable attention owing to their remarkable chemical and thermal stability as well as good field-effect performance. Here, we review recent results on the phthalocyanine-based OTFTs. The correlation between the crystal packing structure and the charge transport property is discussed, and we conclude with a description of the future prospects for phthalocyanine-based OTFTs.
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2

LI, YUNING, and BENG S. ONG. "HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS." COSMOS 05, no. 01 (May 2009): 59–77. http://dx.doi.org/10.1142/s0219607709000427.

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Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.
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3

Jiménez-Tejada, Juan A., Adrián Romero, Jesús González, Nandu B. Chaure, Andrew N. Cammidge, Isabelle Chambrier, Asim K. Ray, and M. Jamal Deen. "Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine." Micromachines 10, no. 10 (October 10, 2019): 683. http://dx.doi.org/10.3390/mi10100683.

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In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. The contact region is also seen as a fundamental part of the device which is sensitive to physical, chemical and fabrication variables. A compact model for OTFTs, which includes the effects of the contacts, and a recent proposal of an associated evolutionary parameter extraction procedure are reviewed. Both the model and the procedure are used to assess the effect of the annealing temperature on a nickel-1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine (NiPc6)-based OTFT. A review of the importance of phthalocyanines in organic electronics is also provided. The characterization of the contact region in NiPc6 OTFTs complements the results extracted from other physical–chemical techniques such as differential scanning calorimetry or atomic force microscopy, in which the transition from crystal to columnar mesophase imposes a limit for the optimum performance of the annealed OTFTs.
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4

CASTRO-CARRANZA, ALEJANDRA, BENJAMIN IÑIGUEZ, and JOSEP PALLARÈS. "CHARGE BEHAVIOR IN ORGANIC THIN FILM TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 04 (December 2011): 727–48. http://dx.doi.org/10.1142/s0129156411007021.

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In this work, we review the physical properties of organic materials and transistors, discussing especially the charge transport mechanisms. Finally, we present an analytical and continuous charge model for Organic Thin Film Transistors (OTFTs) from which analytical expressions of all the total capacitances are obtained. They are developed and finally written as continuous explicit functions of the applied voltage, resulting in a complete charge-based small-signal model composed by a unified charge control model derived from Poisson equation assuming an exponential density of localized states. This charge model was developed from a previously proposed analytical DC current model assuming a hopping based transport. Therefore our complete small signal model has the potential to be successfully used in circuit simulators for the design of OTFTs.
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5

Cavallari, Marco Roberto, Loren Mora Pastrana, Carlos Daniel Flecha Sosa, Alejandra Maria Rodriguez Marquina, José Enrique Eirez Izquierdo, Fernando Josepetti Fonseca, Cleber Alexandre de Amorim, Leonardo Giordano Paterno, and Ioannis Kymissis. "Organic Thin-Film Transistors as Gas Sensors: A Review." Materials 14, no. 1 (December 22, 2020): 3. http://dx.doi.org/10.3390/ma14010003.

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Organic thin-film transistors (OTFTs) are miniaturized devices based upon the electronic responses of organic semiconductors. In comparison to their conventional inorganic counterparts, organic semiconductors are cheaper, can undergo reversible doping processes and may have electronic properties chiefly modulated by molecular engineering approaches. More recently, OTFTs have been designed as gas sensor devices, displaying remarkable performance for the detection of important target analytes, such as ammonia, nitrogen dioxide, hydrogen sulfide and volatile organic compounds (VOCs). The present manuscript provides a comprehensive review on the working principle of OTFTs for gas sensing, with concise descriptions of devices’ architectures and parameter extraction based upon a constant charge carrier mobility model. Then, it moves on with methods of device fabrication and physicochemical descriptions of the main organic semiconductors recently applied to gas sensors (i.e., since 2015 but emphasizing even more recent results). Finally, it describes the achievements of OTFTs in the detection of important gas pollutants alongside an outlook toward the future of this exciting technology.
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6

Lee, Sangyun, Bonwon Koo, Jae-Geun Park, Hyunsik Moon, Jungseok Hahn, and Jong Min Kim. "Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays." MRS Bulletin 31, no. 6 (June 2006): 455–59. http://dx.doi.org/10.1557/mrs2006.118.

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AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.
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7

Alam, Mir Waqas. "Current progress in electrode/pentacene interfaces of pentacene-based organic thin films transistors: A review." Materials Express 9, no. 7 (October 1, 2019): 691–703. http://dx.doi.org/10.1166/mex.2019.1574.

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Organic thin-film transistors (OTFTs) in device physics is currently considered as a standout amongst the most progressive concepts of device applications. Currently, due to humongous technological progress, OTFT with high mobilities can be produced that are comparable to silicon technology. This remarkable mobility is considered as a benchmark for more demanding applications which is accomplished by novel, tenable organic semiconductor materials such as pentacene and the tailoring of their geometries and characteristics. In addition, pentacene demonstrates charge carrier mobilities up to 5.5 cm2/Vs. However very low mobility was achieved in OTFTs due to fabrication defects, material processing etc. The most important defect that arise during the fabrication process is contact interfaces in OTFTs, which highly effect the device performance. Thus, in this article, we will review the current progress of contact engineering of OTFTs with special emphasis on electrode/pentacene interfaces of pentacene-based organic thin film transistors. Further, this review aims to provide an in-depth understanding of bottlenecks to improve the OTFTs performance. After a short introduction, the historical background of pentacene-based OTFTs is discussed that focuses on different methods and materials employed so far to improve the contact between pentacene layer. Also, the review presents the key challenges in the geometry of pentacene based OTFT that is the direct deposition of metal electrodes onto the pentacene channel layer in top contact interface due to which poor carrier injection, high barrier height, chemical diffusion between both layers, high contact resistance and surface roughness has been observed which highly affects the device performance especially the field effect mobility. Also, the state-of-the-art devices and related models that widely employ pentacene are presented. This detailed review will assist the future researchers in understanding and improving field-effect properties of OTFTs.
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8

FORTUNA, LUIGI, MATTIA FRASCA, ELENA UMANA, MANUELA LA ROSA, DONATA NICOLOSI, and GIOVANNI SICURELLA. "ORGANIC CHUA'S CIRCUIT." International Journal of Bifurcation and Chaos 17, no. 09 (September 2007): 3035–45. http://dx.doi.org/10.1142/s0218127407018841.

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In this paper, an entire organic Chua's circuit is presented. The adopted technology is one of the most advanced in the post-silicon era and extends the applications of classical silicon devices. The electronic circuit design is based on Organic Thin-Film Transistors (OTFTs). New electronic blocks based on OTFT are designed to be suitable with the organic technology features. Typical dynamics of the Chua's circuit have been reproduced.
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9

Li, Yao, He Wang, Xuehui Zhang, Qiong Zhang, Xuesong Wang, Danfeng Cao, Zuosen Shi, Donghang Yan, and Zhanchen Cui. "Organic thin film transistors with novel photosensitive polyurethane as dielectric layer." RSC Advances 6, no. 7 (2016): 5377–83. http://dx.doi.org/10.1039/c5ra22970g.

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10

Saikia, D., R. Sarma, P. Saikia, and P. K. Saikia. "Tetracene Based OTFT with Nd2O3-dielectric Layer." Journal of Scientific Research 2, no. 2 (April 26, 2010): 214–20. http://dx.doi.org/10.3329/jsr.v2i2.4094.

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Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010)
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11

Koo, Jae Bon, Jung Wook Lim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Seong Hyun Kim, Sun Jin Yun, Yong Suk Yang, and Kyung Soo Suh. "Pentacene Organic Thin-Film Transistors with Dual-Gate Structure." Solid State Phenomena 124-126 (June 2007): 383–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.383.

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We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.
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12

ZHU, WENQING, LING CHEN, XIANG LIU, YU BAI, BIN WEI, XUEYIN JIANG, and ZHILIN ZHANG. "EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS." International Journal of Modern Physics B 25, no. 01 (January 10, 2011): 91–99. http://dx.doi.org/10.1142/s021797921105669x.

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The performance of organic thin film transistors (OTFTs) strongly depends on the surface states of the gate insulator. Top-contact (TC) OTFTs with modified gate insulator were demonstrated in this paper. The modified gate insulator layers consisted of SiO 2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (Poly (methyl methacylate)) as the modified layer. The devices with the modified layer had field-effect mobility larger than 10-3 cm 2/ Vs , which was twice that of the untreated OTFT. The on/off current ratio was increased one order of magnitude and reached more than 104. The leakage current was decreased from 10-9 A to 10-10 A. The results demonstrate that using modified gate insulators can obviously improve the performance of the OTFTs.
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13

Ni, Yao, Jianlin Zhou, Yuanyuan Hao, Hang Yu, Yanyun Li, Zhenzhen Ruan, and Ping Gan. "Effective performance improvement of organic thin film transistors by using tri-layer insulators." European Physical Journal Applied Physics 83, no. 2 (August 2018): 20201. http://dx.doi.org/10.1051/epjap/2018180138.

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Organic thin film transistors (OTFTs) with silicon oxide (SiO2)/poly(4-vinylphenol) (PVP)/polymethylmethacrylate (PMMA) tri-layer structure (SPP) as dielectric layers have been fabricated. To verify the validity of such tri-layer structure, two different organic semiconductor materials such as p-type pentacene and n-type fluorinated copper phthalo–cyanine (F16CuPc) are both used for fabricating OTFTs. Comparing with the OTFTs even by using PMMA modification, the better interface quality existing between SPP dielectric and organic film leads a higher conductive efficiency for transport carriers in channel. And then the field effect carriers (hole in pentacene OTFTs and electron in F16CuPc OTFTs) mobilities are both increased obviously. Our results show the SPP dielectric structure can be widely used to improve performance of OTFTs.
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14

Choi, Chaun Gi, and Byeong-Soo Bae. "Photo-Patternable Titanium Doped Organic–Inorganic Hybrid Gate Dielectric in Organic Thin Film Transistors." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4679–83. http://dx.doi.org/10.1166/jnn.2008.ic27.

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Solution processable and photo-patternable titanium doped organic–inorganic hybrid material (MDT hybrimer) was prepared by simple sol–gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V−1s−1, −14 V, 1.6 Vdec.−1, and 3 × 106, respectively.
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15

Pyo, Seungmoon, Hyunsam Son, and Mi Hye Yi. "Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors." Journal of Materials Research 20, no. 4 (April 1, 2005): 931–39. http://dx.doi.org/10.1557/jmr.2005.0121.

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Low-temperature processable inherently photosensitive polyimide was prepared from a dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic dianhydride, and aromatic diamines, 4,4′-diamino-3,3′dimethyl-diphenylmethane, through a polycondensation reaction, followed by a chemical imidization method. The photosensitive polyimide cured at 180 °C is used as a gate dielectric to fabricate flexible organic thin-film transistors with pentacene as an active semiconductor on polyethersulfone substrate. With the inherently photosensitive polyimide, the access to the gate electrode could be created easily without complicated and expensive lithographic techniques. A field effect carrier mobility of 0.007 cm2/V s was obtained for the pentacene organic thin-film transistors (OTFTs) with the photo-patterned polyimide as a gate dielectric. More detailed analysis for the pentacene OTFTs will be given with electrical properties of the thin polyimide film. Low-temperature processability and patternability of the polyimide give us more freedom to choose plastic substrates in OTFTs and facilitate the realization of low-cost organic electronics.
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16

Li, Yao, He Wang, Chunyu Zhang, Yingchao Zhang, Zhanchen Cui, Donghang Yan, and Zuosen Shi. "Organic thin-film transistors with novel high-k polymers as dielectric layers." Polymer Chemistry 6, no. 19 (2015): 3685–93. http://dx.doi.org/10.1039/c5py00221d.

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17

Seong, Hyejeong, Junhwan Choi, Bong Jun Kim, Hongkeun Park, and Sung Gap Im. "Vapor-phase synthesis of sub-15 nm hybrid gate dielectrics for organic thin film transistors." Journal of Materials Chemistry C 5, no. 18 (2017): 4463–70. http://dx.doi.org/10.1039/c7tc00501f.

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18

Yu, Hang, Jianlin Zhou, Yuanyuan Hao, and Yao Ni. "Effective performance improvement of organic thin film transistors with multi-layer modifications." European Physical Journal Applied Physics 91, no. 3 (September 2020): 30201. http://dx.doi.org/10.1051/epjap/2020200138.

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Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.
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19

Li, Yao, He Wang, Zuosen Shi, Jingjing Mei, Xuesong Wang, Donghang Yan, and Zhanchen Cui. "Novel high-k polymers as dielectric layers for organic thin-film transistors." Polymer Chemistry 6, no. 37 (2015): 6651–58. http://dx.doi.org/10.1039/c5py00891c.

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20

Yang, Bo-Xuan, Chih-Yao Tseng, Anthony Shiaw-Tseh Chiang, and Cheng-Liang Liu. "A sol–gel titanium–silicon oxide/organic hybrid dielectric for low-voltage organic thin film transistors." Journal of Materials Chemistry C 3, no. 5 (2015): 968–72. http://dx.doi.org/10.1039/c4tc02564d.

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21

Lee, Chang-Hung, Chun-Hao Hsu, Iu-Ren Chen, Wen-Jong Wu, and Chih-Ting Lin. "Percolation of Carbon Nanoparticles in Poly(3-Hexylthiophene) Enhancing Carrier Mobility in Organic Thin Film Transistors." Advances in Materials Science and Engineering 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/878064.

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To improve the field-effect mobility of all-inkjet-printed organic thin film transistors (OTFTs), a composite material consisted of carbon nanoparticles (CNPs) and poly(3-hexylthiophene) (P3HT) was reported by using homemade inkjet-printing system. These all-inkjet-printed composite OTFTs represented superior characteristics compared to the all-inkjet-printed pristine P3HT OTFTs. To investigate the enhancement mechanism of the blended materials, the percolation model was established and experimentally verified to illustrate the enhancement of the electrical properties with different blending concentrations. In addition, experimental results of OTFT contact resistances showed that both contact resistance and channel resistance were halved. At the same time, X-ray diffraction measurements, Fourier transform infrared spectra, ultraviolet-visible light, and photoluminescence spectra were also accomplished to clarify the material blending effects. Therefore, this study demonstrates the potential and guideline of carbon-based nanocomposite materials in all-inkjet-printed organic electronics.
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22

Melville, Owen A., Trevor M. Grant, and Benoît H. Lessard. "Silicon phthalocyanines as N-type semiconductors in organic thin film transistors." Journal of Materials Chemistry C 6, no. 20 (2018): 5482–88. http://dx.doi.org/10.1039/c8tc01116h.

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23

Jung, Soon-Won, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, and Sang Seok Lee. "Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7513–17. http://dx.doi.org/10.1166/jnn.2015.11137.

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In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an Ion/Ioff ratio greater than 105, field-effect mobility of 1.2×10−3 cm2 V−1 s−1, and a 10−11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.
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24

Horowitz, Gilles. "Organic thin film transistors: From theory to real devices." Journal of Materials Research 19, no. 7 (July 2004): 1946–62. http://dx.doi.org/10.1557/jmr.2004.0266.

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The organic thin-film transistor (OTFT) is now a mature device that has developed tremendously during the last twenty years. The aim of this paper is to update previous reviews on that matter that have been published in the past. The operating mode of OTFTs is analyzed in view of recent model development. This mainly concerns the distribution of charges in the conducting channel and problems connected with contact resistance. We also delineate what differentiates n- and p-type semiconductors, and show how this concept differs from what it covers in conventional semiconductors. In the chapter devoted to fabrication techniques, emphasis is placed on solution-based techniques and particularly printing processes. Similarly, soluble materials are given a prominent place in the section dedicated to the performance of devices. Finally, special attention is given to devices at the nanoscale level, which demonstrate a new route toward molecular electronics.
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Lim, Sang Chul, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim, and Tae Hyoung Zyung. "Instability of OTFT with Organic Gate Dielectrics." Solid State Phenomena 124-126 (June 2007): 407–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.407.

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We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.
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26

Park, Min Hong, Junhyung Kim, Seung Chul Lee, Se Youn Cho, Na Rae Kim, Boseok Kang, Eunjoo Song, Kilwon Cho, Hyoung-Joon Jin, and Wi Hyoung Lee. "Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors." RSC Advances 6, no. 7 (2016): 5907–14. http://dx.doi.org/10.1039/c5ra20826b.

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27

Guo, Xiaojun, Lei Han, and Xiao Hou. "Insights into the device structure, processing and material design for an organic thin-film transistor towards functional circuit integration." Materials Chemistry Frontiers 5, no. 18 (2021): 6760–78. http://dx.doi.org/10.1039/d1qm00334h.

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28

Sauvé, Ethan R., Christopher M. Tonge, Nathan R. Paisley, Susan Cheng, and Zachary M. Hudson. "Cu(0)-RDRP of acrylates based on p-type organic semiconductors." Polymer Chemistry 9, no. 12 (2018): 1397–403. http://dx.doi.org/10.1039/c8py00295a.

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A series of four acrylic monomers were synthesized based on p-type organic semiconductor motifs found commonly in organic light-emitting diodes (OLEDs), organic thin-film transistors (OTFTs) and organic photovoltaics (OPVs).
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29

Roy, V. A. L., Y. G. Zhi, Z. X. Xu, S. C. Yu, P. W. H. Chan, and C. M. Che. "Functionalized Arylacetylene Oligomers for Organic Thin-Film Transistors (OTFTs)." Advanced Materials 17, no. 10 (May 13, 2005): 1258–61. http://dx.doi.org/10.1002/adma.200401998.

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30

Werkmeister, Franz, and Bert Nickel. "Towards flexible organic thin film transistors (OTFTs) for biosensing." Journal of Materials Chemistry B 1, no. 31 (2013): 3830. http://dx.doi.org/10.1039/c3tb20590h.

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31

Tonge, Christopher M., Ethan R. Sauvé, Nathan R. Paisley, Jordan E. Heyes, and Zachary M. Hudson. "Polymerization of acrylates based on n-type organic semiconductors using Cu(0)-RDRP." Polymer Chemistry 9, no. 24 (2018): 3359–67. http://dx.doi.org/10.1039/c8py00670a.

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Three acrylic monomers have been prepared based on organic semiconductor motifs commonly used as n-type materials in organic light-emitting diodes (OLEDs) and organic thin-film transistors (OTFTs) and polymerized by Cu(0)-RDRP.
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32

Pannemannn, C., T. Diekmann, and U. Hilleringmann. "Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications." Advances in Radio Science 1 (May 5, 2003): 219–21. http://dx.doi.org/10.5194/ars-1-219-2003.

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Abstract. This letter presents organic thin-film-transistors (OTFT) using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V.
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33

Zhang, Guobing, Jinghua Guo, Min Zhu, Peng Li, Hongbo Lu, Kilwon Cho, and Longzhen Qiu. "Bis(2-oxoindolin-3-ylidene)-benzodifuran-dione-based D–A polymers for high-performance n-channel transistors." Polymer Chemistry 6, no. 13 (2015): 2531–40. http://dx.doi.org/10.1039/c4py01683a.

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34

Kim, Joo-Young, Eun Kyung Lee, Jiyoung Jung, Don-Wook Lee, Youngjun Yun, Jong Won Chung, Jeong-Il Park, and Jang-Joo Kim. "Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability." Journal of Materials Chemistry C 7, no. 19 (2019): 5821–29. http://dx.doi.org/10.1039/c8tc06236f.

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A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).
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35

Dragoneas, A., L. Hague, and M. Grell. "An electrical characterisation system for the real-time acquisition of multiple independent sensing parameters from organic thin film transistors." Journal of Sensors and Sensor Systems 4, no. 1 (May 13, 2015): 169–77. http://dx.doi.org/10.5194/jsss-4-169-2015.

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Abstract. The presence of multiple independent sensing parameters in a single device is the key conceptual advantage of sensor devices based on an organic thin film transistor (OTFT) over simple organic chemiresistors. Practically, however, these multiple parameters must first be extracted from the electrical characteristics of the OTFTs and, thus, they are not immediately apparent. To exploit the advantage of OTFT sensors, we require a measurement technology to extract these parameters in real time. Here, we introduce an efficient, cost-effective system that is a faster and more compact alternative to the expensive and cumbersome laboratory-based instruments currently available. The characterisation system presented here records the electric behaviour of OTFTs in the form of its "saturated transfer characteristics" multiple times per second for virtually unlimited periods of time, with the option to multiplex up to 20 devices in parallel. By applying a bespoke algorithm to the measured transfer characteristics, the system then extracts, in real time, several underlying transistor parameters (on- and off-current, threshold voltage, and charge carrier mobility). Tests were conducted on the example of a poly(thieno[3,2-b]thiophene) (PBTTT) OTFT exposed to ethanol vapour. The system extracts the underlying OTFT parameters with very low noise without introducing apparent correlations between independent parameters as an artefact.
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Yu, Yang-Yen, Cheng-Liang Liu, Yung-Chih Chen, Yu-Cheng Chiu, and Wen-Chang Chen. "Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications." RSC Adv. 4, no. 107 (2014): 62132–39. http://dx.doi.org/10.1039/c4ra08694e.

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Polyimide (PI)–BaTiO3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings (X) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs).
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37

Yi, Mingdong, Yuxiu Guo, Jialin Guo, Tao Yang, Yuhua Chai, Quli Fan, Linghai Xie, and Wei Huang. "The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer." J. Mater. Chem. C 2, no. 16 (2014): 2998–3004. http://dx.doi.org/10.1039/c3tc32460e.

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38

Sarkar, Sudipta K., and Dipti Gupta. "Low temperature flash light curing of spray coated zirconium oxide gate dielectric for flexible, fully patterned and low voltage operated organic thin film transistor." MRS Advances 2, no. 23 (2017): 1273–78. http://dx.doi.org/10.1557/adv.2017.289.

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ABSTRACTIn this work, we present low temperature flash light based curing of spray coated high-k zirconium oxide (ZrOx) thin film to realize low voltage operated flexible and fully patterned organic thin film transistors (OTFTs). A simple sol-gel technique was followed to prepare ZrOx from a zirconium complex. By spraying the precursor solution onto substrate through shadow mask, a patterned film was obtained. On the other hand subsequent flash light curing of the coated film not only reduced processing time but also allowed us to fabricate device on polymeric flexible substrate. Spectroscopic analysis confirmed formation of ZrOx film from the solution of zirconium complex. Finally as prepared ZrOx was used as gate dielectric layer in OTFT structure to keep operating voltage as low as -3V. Flexible polyethylenetrephthalate (PET) sheet was used as flexible substrate and pentacene was used as organic active layer. Each and every layer was deposited through metal made shadow mask to develop fully patterned OTFT. Field effect mobility and ON/OFF ratio of as fabricated transistor was found to be as high as 1.2 cm2V-1S-1 and 105 respectively.
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39

Kitahara, G., K. Aoshima, J. Tsutsumi, H. Minemawari, S. Arai, and T. Hasegawa. "SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors." MRS Advances 3, no. 49 (2018): 2931–36. http://dx.doi.org/10.1557/adv.2018.423.

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ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.
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40

Kim, Do-Kyung, Jae-Hyung Han, Muhan Choi., and Jin-Hyuk Bae. "Organic Thin Film Transistors Fabricated by a Solution Process Using Direct Patterned Single-Layer Graphene Electrodes." Journal of Nanoscience and Nanotechnology 20, no. 10 (October 1, 2020): 6435–40. http://dx.doi.org/10.1166/jnn.2020.18594.

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We propose the direct transfer method of single-layer graphene (SLG) from metal catalyst Cu-foil to a polymeric insulator and the direct patterning method of the SLG for electrodes of organic thin-film transistors (OTFTs) without contamination using soft-lithography. Through soft-lithography, SLG can be formed in various patterns relatively easily in comparison with the conventional photolithography method that has multiple complex process steps to make graphene patterns. Furthermore, the 6,13-bis(triisopropylsilylethynyl) pentacene OTFTs are fabricated in solution with SLG source and drain electrodes. As a result, the field-effect mobility of OTFTs based on SLG electrodes was enhanced about 4 times in comparison with that of OTFTs using typical metal electrodes due to the decrease in contact resistance.
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Zou, Jiawei, Shizhang Li, He Wang, Wei Wang, Zuosen Shi, Yuhang Jiang, Zhanchen Cui, and Donghang Yan. "High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors." Journal of Materials Chemistry C 7, no. 48 (2019): 15357–63. http://dx.doi.org/10.1039/c9tc04417e.

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Low-voltage operating OTFTs have attracted interest as core components for low power applications and electronics. An ideal insulation material as the OTFT gate dielectric layer should possess high-k, good insulation property, mechanical flexibility and inherent nature suitable for growth of organic semiconductors.
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42

Yutronkie, Nathan J., Trevor M. Grant, Owen A. Melville, Benoît H. Lessard, and Jaclyn L. Brusso. "Old Molecule, New Chemistry: Exploring Silicon Phthalocyanines as Emerging N-Type Materials in Organic Electronics." Materials 12, no. 8 (April 24, 2019): 1334. http://dx.doi.org/10.3390/ma12081334.

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Efficient synthesis of silicon phthalocyanines (SiPc) eliminating the strenuous reaction conditions and hazardous reagents required by classical methods is described. Implementation into organic thin-film transistors (OTFTs) affords average electron field-effect mobility of 3.1 × 10−3 cm2 V−1 s−1 and threshold voltage of 25.6 V for all synthetic routes. These results demonstrate that our novel chemistry can lead to high performing SiPc-based n-type OTFTs.
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Wang, Ze Ying, Dong Xing Wang, Yong Shuang Zhang, Yue Yue Wang, Jing Hua Yin, and Hong Zhao. "The Dynamic Characteristics of Al Gate CuPc Thin Film Transistor." Advanced Materials Research 981 (July 2014): 830–33. http://dx.doi.org/10.4028/www.scientific.net/amr.981.830.

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We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is ton=2.68ms, toff= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency fc=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.
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44

Owen, Jack W., Natalia A. Azarova, Marsha A. Loth, Markos Paradinas, Mariona Coll, Carmen Ocal, John E. Anthony, and Oana D. Jurchescu. "Effect of Processing Parameters on Performance of Spray-Deposited Organic Thin-Film Transistors." Journal of Nanotechnology 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/914510.

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The performance of organic thin-film transistors (OTFTs) is often strongly dependent on the fabrication procedure. In this study, we fabricate OTFTs of soluble small-molecule organic semiconductors by spray-deposition and explore the effect of processing parameters on film morphology and device mobility. In particular, we report on the effect of the nature of solvent, the pressure of the carrier gas used in deposition, and the spraying distance. We investigate the surface morphology using scanning force microscopy and show that the molecules pack along theπ-stacking direction, which is the preferred charge transport direction. Our results demonstrate that we can tune the field-effect mobility of spray-deposited devices two orders of magnitude, from 10−3 cm2/Vs to 10−1 cm2/Vs, by controlling fabrication parameters.
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45

KUMAR, ANSHUMAN, RAMESH R. NAVAN, AJAY KUSHWAHA, M. ASLAM, and V. RAMGOPAL RAO. "PERFORMANCE ENHANCEMENT OF p-TYPE ORGANIC THIN FILM TRANSISTORS USING ZINC OXIDE NANOSTRUCTURES." International Journal of Nanoscience 10, no. 04n05 (August 2011): 761–64. http://dx.doi.org/10.1142/s0219581x11008800.

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This paper reports the performance enhancement of nanocomposite thin film transistors fabricated using ZnO dispersed in p-type polymer, poly 3-hexylthiophene (P3HT). The ZnO nanostructures considered here are nanorods (300–500 nm), that were deposited in the high temperature zone during vapor phase deposition involving carbothermal reduction of solid zinc precursor. Organic Thin Film Transistors (OTFTs) based on the dispersion of these ZnO nanostructures in the p-type organic semiconductor, P3HT, show a mobility enhancement by 10 times for the organic–inorganic composite (~ 4 × 10-3 cm2/V s) compared to its pristine state (~ 4 × 10-4 cm2/V s). The results presented here show a great promise for the performance enhancement of p-type solution processable FETs.
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46

Vorona, Mikhail Y., Nathan J. Yutronkie, Owen A. Melville, Andrew J. Daszczynski, Jeffrey S. Ovens, Jaclyn L. Brusso, and Benoît H. Lessard. "Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors." Materials 13, no. 8 (April 22, 2020): 1961. http://dx.doi.org/10.3390/ma13081961.

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Anthracene-based semiconductors have attracted great interest due to their molecular planarity, ambient and thermal stability, tunable frontier molecular orbitals and strong intermolecular interactions that can lead to good device field-effect transistor performance. In this study, we report the synthesis of six anthracene derivatives which were di-substituted at the 2,6-positions, their optical, electrochemical and thermal properties, and their single crystal structures. It was found that 2,6-functionalization with various fluorinated phenyl derivatives led to negligible changes in the optical behaviour while influencing the electrochemical properties. Furthermore, the choice of fluorinated phenyl moiety had noticeable effects on melting point and thermal stability (ΔTm < 55 °C and ΔTd < 65 °C). Bottom-gate top-contact (BGTC) organic thin transistors (OTFTs) were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. The addition of fluorine groups on the phenyl groups led to a transition from p-type behaviour to n-type behaviour in BGBC OTFTs.
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47

Tang, W. M., M. G. Helander, M. T. Greiner, Z. H. Lu, and W. T. Ng. "Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2as Gate Dielectric." Active and Passive Electronic Components 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/901076.

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Copper phthalocyanine-based organic thin-film transistors (OTFTs) with zirconium oxide (ZrO2) as gate dielectric have been fabricated on glass substrates. The gate dielectric is annealed in N2at different durations (5, 15, 40, and 60 min) to investigate the effects of annealing time on the electrical properties of the OTFTs. Experimental results show that the longer the annealing time for the OTFT, the better the performance. Among the devices studied, OTFTs with gate dielectric annealed at 350°C in N2for 60 min exhibit the best device performance. They have a small threshold voltage of −0.58 V, a low subthreshold slope of 0.8 V/decade, and a low off-state current of 0.73 nA. These characteristics demonstrate that the fabricated device is suitable for low-voltage and low-power operations. When compared with the TFT samples annealed for 5 min, the ones annealed for 60 min have 20% higher mobility and nearly two times smaller the subthreshold slope and off-state current. The extended annealing can effectively reduce the defects in the high-k film and produces a better insulator/organic interface. This results in lower amount of carrier scattering and larger CuPc grains for carrier transport.
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48

Okada, Jun, Takashi Nagase, Takashi Kobayashi, and Hiroyoshi Naito. "Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors." Journal of Nanoscience and Nanotechnology 16, no. 4 (April 1, 2016): 3219–22. http://dx.doi.org/10.1166/jnn.2016.12297.

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Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylben-zothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.
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49

DWIVEDI, A. D. D., and POOJA KUMARI. "TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs." Surface Review and Letters 27, no. 05 (August 23, 2019): 1950145. http://dx.doi.org/10.1142/s0218625x19501452.

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This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS™ from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.
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50

Izquierdo, José Enrique Eirez, José Diogo da Silva Oliveira, Vinicius Augusto Machado Nogueira, Dennis Cabrera García, Marco Roberto Cavallari, Ioannis Kymissis, and Fernando Josepetti Fonseca. "Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors." Journal of Integrated Circuits and Systems 16, no. 2 (August 15, 2021): 1–11. http://dx.doi.org/10.29292/jics.v16i2.197.

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This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.
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